WO2009139060A1 - Procédé de fabrication de dispositif à matrice optique et appareil de fabrication de dispositif à matrice optique - Google Patents

Procédé de fabrication de dispositif à matrice optique et appareil de fabrication de dispositif à matrice optique Download PDF

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Publication number
WO2009139060A1
WO2009139060A1 PCT/JP2008/058936 JP2008058936W WO2009139060A1 WO 2009139060 A1 WO2009139060 A1 WO 2009139060A1 JP 2008058936 W JP2008058936 W JP 2008058936W WO 2009139060 A1 WO2009139060 A1 WO 2009139060A1
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Prior art keywords
laser
droplet
matrix device
optical matrix
manufacturing
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PCT/JP2008/058936
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English (en)
Japanese (ja)
Inventor
足立　晋
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株式会社島津製作所
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Priority to PCT/JP2008/058936 priority Critical patent/WO2009139060A1/fr
Publication of WO2009139060A1 publication Critical patent/WO2009139060A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
    • H01L27/14676—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1292—Multistep manufacturing methods using liquid deposition, e.g. printing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14692—Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
    • H05K3/1241—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by ink-jet printing or drawing by dispensing
    • H05K3/125—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by ink-jet printing or drawing by dispensing by ink-jet printing
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/01—Tools for processing; Objects used during processing
    • H05K2203/0104—Tools for processing; Objects used during processing for patterning or coating
    • H05K2203/013—Inkjet printing, e.g. for printing insulating material or resist
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
    • H05K2203/107—Using laser light
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
    • H05K3/1283—After-treatment of the printed patterns, e.g. sintering or curing methods

Definitions

  • the present invention relates to a pixel formed of a thin film transistor (TFT) and a capacitor, such as a thin image device used as a monitor of a television or a personal computer, or a radiation detector provided in a radiation imaging device used in the medical field or industrial field.
  • TFT thin film transistor
  • the present invention relates to an optical matrix device manufacturing method and an optical matrix device manufacturing apparatus having a structure arranged in a two-dimensional matrix.
  • an optical matrix device in which pixels formed by thin film transistors (TFTs) and capacitors are arranged in a two-dimensional matrix has been widely used.
  • TFTs thin film transistors
  • These are broadly classified into devices composed of light receiving elements and devices composed of display elements.
  • the light receiving element include an optical imaging sensor and a radiation imaging sensor used in the medical field or the industrial field.
  • the display element include a thin image display used as a monitor for a television or a personal computer.
  • light refers to infrared rays, visible rays, ultraviolet rays, radiation, ⁇ rays, and the like.
  • a radiation detector as a light receiving matrix device will be described as an example.
  • pixels DU for detecting X-rays are arranged in a two-dimensional matrix.
  • an X-ray conversion layer such as a semiconductor layer 61 sensitive to X-rays is provided, and the X-rays are converted into carriers (charge information) by the X-ray conversion layer, and the converted carriers are read out.
  • the semiconductor layer 61 an amorphous amorphous selenium (a-Se) film or the like is used.
  • a radiation image transmitted through the subject is projected onto the a-Se film, and carriers proportional to the density of the image are generated in the a-Se film. To do. Thereafter, carriers generated in the a-Se film are accumulated for a predetermined time (also called “accumulation time”) in the capacitors 62 arranged in a two-dimensional matrix by the voltage applied to the voltage application electrode. Thereafter, the charge accumulated in the capacitor 62 passes through the thin film transistor 65 and through the data line 66 due to the switching action by the gate voltage sent from the gate drive circuit 63 through the gate line 64, and the charge-voltage converter group.
  • a predetermined time also called “accumulation time”
  • FIG. 10 shows a matrix configuration of 3 ⁇ 3 pixels, but an active matrix substrate having a size corresponding to the number of pixels of the radiation detector is actually used.
  • an active matrix substrate having switching elements composed of thin film transistors 65 arranged in a two-dimensional matrix, an insulating substrate on which the above-described capacitor 62 and the like are patterned, are formed on the a- It is obtained by depositing a Se film.
  • the optical matrix device provided in the radiation detector 60 or the thin image display has a data line 66 for writing or reading data as shown in FIG. 10 and a switching function for writing or reading data.
  • a gate line 64 connected to the gate electrode of the thin film transistor 65 is provided.
  • ink droplets (ink) containing semiconductors, insulators, or conductive fine particles are printed and applied onto insulating substrates using inkjet printing technology.
  • a semiconductor film, an insulator film, or a conductive wire can be formed by an inkjet method.
  • the droplet 71 ejected from the inkjet nozzle is kept in a solution or colloidal state by dissolving or dispersing a semiconductor, an insulator, or conductive fine particles in an organic solvent.
  • the organic solvent is volatilized by performing a heat curing process to form a semiconductor layer, an insulator layer, or a conductor (wiring).
  • Patent Document 1 discloses an inkjet printing system having a drying chamber for drying and curing droplets by adjusting the vapor pressure of the solvent of the droplets dropped on the substrate. Further, Patent Document 2 discloses a method in which droplets are dropped to form a pattern and then cured using a laser. JP 2007-164188 A JP-T-2007-504661
  • the droplet 75 that was in the state shown in FIG. 12 (a) immediately after dropping the height of the droplet 75 decreases with time as shown in FIG. 12 (b),
  • a droplet 75 having a width d1 of 50 ⁇ m immediately after being settled on an insulating substrate may expand to 100 ⁇ m (d2) with the passage of time. This is also due to the wettability between the droplet and the insulating substrate.
  • the height and width of the liquid droplet are different between the liquid droplet first dropped from the inkjet nozzle and the liquid droplet dropped just before being cured.
  • An object of the present invention is to provide an optical matrix device manufacturing method and an optical matrix device manufacturing apparatus provided with a matrix substrate capable of obtaining a film pattern.
  • the present invention has the following configuration. That is, the method for manufacturing an optical matrix device according to the present invention is an optical matrix device configured by arranging light-related elements in a two-dimensional matrix, and includes a semiconductor film, an insulator film, and a conductor film forming the device.
  • a droplet ejection step of ejecting droplets containing conductive fine particles or an insulator or a semiconductor onto an insulating substrate; and And a droplet curing step of curing the droplets deposited on the insulating substrate for each droplet with a laser.
  • the droplets are cured for each droplet dropped, so that the droplets that have settled on the insulating substrate do not flow laterally, and adjacent droplets are merged together.
  • a printed film-forming pattern that does not form a liquid dull (bulge).
  • a printed film forming pattern in which the height of the cured droplets is uniform.
  • the droplet settled on the insulating substrate may be thermally cured with a laser, or may be photocured with a laser if the droplet has photocurability.
  • the printed film formation pattern may be further cured.
  • the droplets are cured to such an extent that the droplets do not move during the formation of the printing film formation pattern, and are cured again after the formation of the printing film formation pattern. It does not have to be. Thereby, the laser irradiation time can be shortened, and the printing application of the printing film forming pattern can be accelerated.
  • the optical matrix device manufacturing apparatus of the present invention is an optical matrix device configured by arranging light-related elements in a two-dimensional matrix, and includes a semiconductor film, an insulator film, and a conductor film that form the device.
  • an inkjet nozzle that ejects droplets containing conductive fine particles, an insulator, or a semiconductor onto the insulating substrate; and the inkjet nozzle
  • a laser generator that irradiates the droplets ejected from the laser, a stage control unit that controls a relative position between the insulating substrate, the inkjet nozzle, and the laser generator; and the droplets from the inkjet nozzle From the laser generator every time it is injected onto the insulating substrate
  • a control unit for irradiating Za characterized by curing by irradiating laser from the laser generator to the liquid droplets settled on the insulating substrate per drop.
  • the droplets dropped from the ink jet nozzles are cured one by one, so that the droplets that have settled on the insulating substrate do not flow laterally, but adjacent droplets coalesce to form a liquid.
  • a printed film-forming pattern can be formed without forming a dull (bulge). Furthermore, it is possible to obtain a printed film forming pattern in which the height of the cured droplets is uniform.
  • this optical matrix device manufacturing apparatus may cure the droplets by either a thermosetting type or a photosetting type method.
  • the droplet is cured before the shape of the droplet settled on the insulating substrate is changed.
  • the droplets that have settled on the substrate do not flow laterally, and adjacent droplets do not merge to form a liquid dip (bulge). Furthermore, it is possible to obtain a printed film forming pattern in which the height of the cured droplets is uniform.
  • FIG. 1 is a schematic perspective view showing a configuration of a matrix substrate printer according to Embodiment 1
  • FIG. 2 is a block diagram showing a configuration of an optical matrix device manufacturing apparatus
  • FIG. 3 is a longitudinal section showing a structure of an inkjet nozzle.
  • FIG. 4 is a timing chart of the pulse signal to the piezoelectric element of the inkjet nozzle and the pulse signal of laser irradiation
  • FIG. 5 is a series of flows in which droplets are ejected from the inkjet nozzle and cured by the laser. It is explanatory drawing which shows.
  • the matrix substrate printer 1 includes a support arm 7 provided with an inkjet nozzle 3 and a laser generator 5 disposed in the vicinity thereof, and an insulation disposed so as to face the inkjet nozzle 3.
  • a substrate support table 10 that supports the substrate 9 an X-direction table drive mechanism 11 that moves the substrate support table 10 in the X direction, and a Y-direction table drive mechanism 12 that moves the substrate support table 10 in the Y direction.
  • the droplets 4 dropped from the inkjet nozzle 3 and settled on the insulating substrate 9 are irradiated with a pulse laser from the laser generator 5 for each droplet, and the droplets 4 are cured.
  • the ink stored in the inkjet nozzle 3 and the droplet 4 (ink) ejected from the inkjet nozzle 3 in this embodiment are a solution in which a semiconductor, an insulator, or conductive fine particles are dissolved or dispersed in an organic solvent. It is in a state or colloidal state.
  • a semiconductor such as pentacene is a candidate.
  • the present invention is not limited to this, and an inorganic substance such as amorphous silicon (a-Si), an oxide semiconductor, or a carbon nanotube may be used.
  • An example of the insulator is an organic insulator such as polyimide, but is not limited thereto, and an optimal material may be selected as appropriate.
  • examples of the conductive fine particles include metal inks in which metals such as silver, gold, platinum, and copper are made into nano-sized (about 10 ⁇ 9 m) particles.
  • conductive polymers and superconductors are also included. Fine particles may be used.
  • Examples of lasers employed in this example include Ar laser, Kr laser, excimer laser, YAG laser, Y 2 O 3 laser, YVO 4 laser, YLF laser, YalO 3 laser, glass laser, ruby laser, and alexandrite laser.
  • Ti sapphire laser, copper vapor laser, gold vapor laser or the like.
  • pulse laser pulse oscillation type laser
  • a lens is detachably disposed at the tip of the laser generator 5, and the focal length and width of the laser can be adjusted by exchanging the lens.
  • thermosetting type or a photocuring type can be selected for the printed film-forming pattern by a combination of laser and ink materials.
  • a thermosetting type is adopted, and the droplet 4 absorbs thermal energy and is thermally cured by irradiating the droplet 4 with a laser.
  • the present invention is not limited to this, and when a photocurable ink, for example, a photocurable synthetic resin is employed, a photocurable insulating film can be formed by laser irradiation.
  • a combination of both a thermosetting type and a photocurable type may be used.
  • an ink and laser that cures with infrared light or ultraviolet light such as a combination of infrared laser and infrared curable ink, or a combination of ultraviolet laser and ultraviolet curable ink. Is preferred.
  • the portion of the droplet 4 that is not irradiated with the laser is also light-cured under normal illumination, so a printed film-forming pattern must be formed in a dark room.
  • the insulating substrate 9 may be either glass or synthetic resin.
  • a synthetic resin polyimide, polyethylene naphthalate (PEN), polyethersulfone (PES), polyethylene terephthalate (PET), and the like can be cited as examples, but polyimide having excellent heat resistance is preferable.
  • FIG. 1 only one inkjet nozzle 3 and one laser generator 5 are provided on the support arm 7, but this is a simplified configuration. If a plurality of inkjet nozzles 3 and laser generators 5 are provided, a printed film-forming pattern can be formed at high speed.
  • the optical matrix manufacturing apparatus 13 includes a matrix substrate printer 1 and a host computer 15 including a control unit 17 that controls each component device of the matrix substrate printer 1.
  • the control unit 17 in the host computer 15 controls the timing of droplet ejection from the inkjet nozzle 3 and laser irradiation from the laser generator 5.
  • the control unit 17 sends a position signal to the stage control unit 20 that controls driving of the substrate support table 10 in the X and Y directions, and sends a droplet ejection signal to the inkjet nozzle 3. Further, a laser generation pulse is sent to the laser generator 5.
  • the X-direction table drive mechanism 11 and the Y-direction table drive mechanism 12 drive the substrate support table 10 in the X and Y directions based on the position signal sent from the control unit 17. In this way, the substrate support table 10 moves in synchronization with the droplet ejection from the inkjet nozzle 3 and the laser irradiation from the laser generator 5.
  • the inkjet nozzle 3 of this embodiment employs a piezo type.
  • a piezoelectric element (piezo element) 23 sandwiched between a pair of electrodes 21 is provided above the inkjet nozzle 3.
  • the piezoelectric pulse shown in FIG. 4 is applied to the electrode 21 and energized, the piezoelectric element warps upward and the upper portion of the ink tank 25 also warps upward, so that the volume of the ink tank 25 increases. Ink corresponding to the increased volume in the ink tank 25 is replenished in the ink tank 25.
  • the piezoelectric element 23 and the upper part of the ink tank 25 return to the original state, so that the pressure of the ink in the ink tank 25 rises and one droplet 4 is ejected from the tip of the inkjet nozzle 3.
  • the size of the droplet 4 is determined by the shape of the tip of the inkjet nozzle 3, but in this embodiment, the diameter is set to 1 ⁇ m or more and 100 ⁇ m or less.
  • the piezo type is adopted as the ink jet nozzle, but another type of piezo type or a thermal type may be adopted.
  • the thermal type it is necessary to adjust the application time so that the ink is not cured by heat.
  • the method for manufacturing an optical matrix device according to the present invention includes a droplet ejection step and a droplet curing step. Hereinafter, each step will be described.
  • FIG. 4 is a timing chart showing a piezoelectric pulse to the piezoelectric element 23 provided in the inkjet nozzle 3 performed by the control unit 17 and a laser generation pulse to the laser generator 5.
  • a pulse voltage is applied to the piezoelectric element 23 from time t1 to time t2, and ink is replenished in the inkjet tank 25.
  • the piezoelectric element 23 returns to its original shape, and the droplet 4 is ejected onto the insulating substrate 9.
  • the droplet ejection step in the present invention corresponds to the ejection of the droplet 4 onto the insulating substrate 9 by sending a pulse of an applied voltage to the piezoelectric element 23.
  • a laser generation pulse is applied at time t3 when the droplet 4 settles on the insulating substrate 9, and the laser irradiates the droplet 4.
  • the laser beam irradiates the droplet 4 from time t3 to t4, whereby the droplet 4 is cured. Curing the droplet 4 by irradiating the droplet 4 settled on the insulating substrate 9 with a laser corresponds to a droplet curing step in the present invention.
  • the droplet ejection step and the droplet curing step are alternately repeated to form a printed film formation pattern.
  • the droplets 4 ejected from the ink jet nozzle 3 are thermally cured by the laser as soon as the droplets 4 settle on the insulating substrate 9.
  • the ejection of the droplets 4 and the laser irradiation are performed at a cycle of 100 Hz, but the cycle can be appropriately changed depending on the degree of cure of the droplets 4.
  • FIGS. 5A to 5D show a process of forming a printing film forming pattern by the timing chart shown in FIG. The ejection of the droplet 4 from the inkjet nozzle 3 and the laser irradiation are repeated alternately.
  • the arrows in FIGS. 5A to 5D indicate the traveling direction of the substrate support table 10.
  • the droplet 4 is ejected from the inkjet nozzle 3
  • the dropped droplet 4 is irradiated with a laser from the laser generator 5 to cure the droplet 4 and print the film.
  • a pattern 26 is formed.
  • FIG. 5C the droplet 4 is again ejected from the inkjet nozzle 3, and in FIG.
  • the dropped droplet 4 is irradiated with a laser from the laser generator 5, and the droplet 4 is cured. Then, a printed film forming pattern 26 is further formed. Thus, every time the droplet 4 is dropped from the inkjet nozzle 3, it is cured by the laser.
  • the laser width to be irradiated is made narrower than the size of the droplet 4 dropped on the insulating substrate 9, a printed film forming pattern having a width smaller than the size of the droplet 4 can be formed.
  • the width of the laser to be irradiated may be set to 20 ⁇ m with a lens or the like even if the diameter of the dropped droplet 4 is 50 ⁇ m. By doing so, only the portion irradiated by the laser is thermally cured, so that after pattern formation, a film width of 20 ⁇ m can be formed by washing away the portion not thermally cured with an organic solvent such as tetradecane. .
  • the droplets 4 are cured before spreading outward, the amount of the droplets 4 to be washed away can be reduced.
  • FIG. 6 is a flowchart showing the flow of the manufacturing process of the flat panel X-ray detector (FPD) manufactured by the optical matrix device manufacturing apparatus 13 according to the embodiment, and FIGS. 7 and 8 show the flat according to the embodiment. It is a typical longitudinal cross-sectional view which shows the manufacturing process of a panel type
  • Step S1 Formation of Gate Line / GND Line
  • the ground line 27 and the gate line 28 are printed on the insulating substrate 9 by the optical matrix device manufacturing method according to the above-described embodiment.
  • the method for manufacturing the optical matrix device according to the above-described embodiment is similarly used for forming the pattern to be laminated.
  • Step S2 Formation of Insulating Layer
  • the insulating layer 29 is uniformly laminated on the ground line 27, the gate line 28, and the insulating substrate 9.
  • Step S3 Gate Channel Formation Then, as shown in FIG. 7C, a gate channel 30 is formed at a predetermined position facing the gate line 28 with the insulating layer 29 interposed therebetween.
  • Step S4 Formation of Data Line / Carrier Collection Electrode
  • the carrier collection electrode 31 and the data line 32 are stacked on the insulating film 29 with the gate channel 30 interposed therebetween.
  • the carrier collecting electrode 31 is laminated so as to face the ground line 27 with the insulating film 29 interposed therebetween.
  • the insulating film 29 interposed between the line 32, the gate channel 30 and the carrier collecting electrode 31 constitutes a thin film transistor 33.
  • the capacitor 34 is constituted by the insulating film 29 interposed between the carrier collecting electrode 31 and the ground line 27.
  • Step S5 Formation of Insulating Film
  • an insulating film 35 is formed on the data line 32, the carrier collecting electrode 31, the gate channel 30, and the insulating layer 29. Thereafter, in order to connect to the pixel electrode 36 to be laminated, there is a portion on the carrier collecting electrode 31 where the insulating film 35 is not laminated, and the periphery of the carrier collecting electrode 31 is laminated with the insulating film 35.
  • Step S6 Formation of Pixel Electrode As shown in FIG. 7F, the pixel electrode 36 is laminated on the carrier collection electrode 31 and the insulating film 35.
  • Step S ⁇ b> 7 Formation of Insulating Film
  • an insulating film 37 is stacked on the pixel electrode 36 and the insulating film 35. Thereafter, in order to collect the carriers generated by the semiconductor layer 38 to be stacked on the pixel electrode 36, an insulating film 37 is not stacked on the most part of the pixel electrode 36 so as to directly contact the semiconductor layer 38. Only the periphery of the electrode 36 is laminated with an insulating film 37. That is, the insulating film 37 is laminated so as to open the pixel electrode 36.
  • Step S8 Formation of Radiation Conversion Layer
  • a semiconductor layer 38 is stacked on the pixel electrode 36 and the insulating film 37.
  • a-Se is laminated as the semiconductor layer 38 which is a light receiving element, and hence vapor deposition is used.
  • the stacking method may be changed depending on what kind of semiconductor is used for the semiconductor layer 38.
  • Step S ⁇ b> 9 Voltage Application Electrode Formation
  • the voltage application electrode 39 is laminated on the semiconductor layer 38.
  • a protective layer (not shown) is further laminated on the voltage application electrode 39 to form an active matrix substrate composed of the carrier collection electrode 31, the capacitor 34, the thin film transistor 33, the data line 32, and the gate line 28.
  • a series of production of the flat panel X-ray detector provided is completed.
  • the configurations of the active matrix substrate and the peripheral circuits provided in the flat panel X-ray detector (FPD) manufactured according to this embodiment are the same as those in FIG.
  • the formation of the laminated pattern of these active matrix substrates is not limited to the manufacturing method of the optical matrix device according to the above-described embodiments, but may be a combination of photolithography methods such as vapor deposition, spin coating, electroplating, and sputtering. Good. In particular, it is more effective than the ink jet method when an insulating film is uniformly formed on the entire active matrix substrate.
  • a radiation-sensitive material in which carriers are generated by the incidence of radiation or a light-sensitive type in which carriers are generated by the incidence of light. If it is a substance, it may be an organic semiconductor.
  • each thin film transistor 33 is formed by the above-described method for manufacturing an optical matrix device, there is no defective portion, the film thickness is constant, and stable operation can be performed. Further, since the gate lines 28 and the data lines 32 on the insulating substrate 9 are also formed by the optical matrix device manufacturing method described above, the wiring height is uniform and the resistivity is low. In addition, a wiring without disconnection can be formed. Thus, a radiation detector in which the generation of noise is suppressed can be manufactured. In addition, since there is no disconnection, the product yield is improved.
  • the semiconductor layer 38 generates carriers by radiation.
  • the semiconductor layer 38 is not limited to radiation, and a light conversion layer sensitive to light may be used. By doing so, it is possible to manufacture a photodetector with the same structure.
  • light refers to infrared rays, visible rays, ultraviolet rays, radiation, ⁇ rays, and the like.
  • the width of the laser is wider than the width of the droplet 4, it is possible to obtain a printed film formation pattern that is uniform not only in the height of the droplet 4, but also in the width.
  • the width of the laser is narrower than the width of the droplet 4, the amount of the droplet 4 to be washed out can be reduced.
  • FIG. 9 is a partially broken perspective view of a display (organic EL display) including an active matrix substrate as an example of an image display device.
  • the method of the present invention is also preferably applied to the manufacture of an image display device.
  • the image display device is a thin electroluminescent display or liquid crystal display.
  • the image display apparatus also includes a pixel circuit formed on an active matrix substrate, and is preferably applied to such a device.
  • an organic EL display 40 including an active matrix substrate is connected to an insulating substrate 41, a plurality of TFT circuits 42 arranged in a matrix on the insulating substrate 41, and pixel electrodes 43.
  • the organic EL layer 44 is configured by laminating layers such as an electron transport layer, a light emitting layer, and a hole transport layer.
  • the organic EL display 40 is formed in each TFT circuit 42 by the manufacturing method of the optical matrix device by Example 1 mentioned above as a switching element of a pixel, it can perform stable operation
  • the present invention is not limited to the above embodiment, and can be modified as follows.
  • the droplets 4 are thermally cured by laser irradiation from the laser generator 5, but after the printing and coating of the printed film formation pattern is finished, the heat treatment is again performed by a drying furnace or laser. May be performed.
  • the thermosetting of the droplet 4 by laser irradiation at the time of dropping the droplet 4 can be temporarily dried, and a liquid pool (bulge) due to prevention of lateral flow of the droplet 4 or surface tension of the droplet 4 In order to prevent the formation, it is only necessary to temporarily adhere to the insulating substrate 9.
  • the laser irradiation time at the time of dropping the droplet 4 can be shortened, and the printing speed of the printing film forming pattern can be improved.
  • the printing film forming pattern may be further irradiated with a laser or light to be cured.
  • the pulsed laser is irradiated in synchronism with the dropping of the droplet 4, so that the droplet 4 is cured.
  • the continuous laser is reflected on the rotating mirror.
  • the laser beam may be irradiated to each droplet 4 to be dropped.
  • you may irradiate a laser for every droplet with respect to the droplet 4 dripped by rotating a shutter to a continuous laser.
  • the optical matrix device provided with the bottom gate type active matrix substrate is manufactured.
  • the optical matrix device provided with the top gate type active matrix substrate may be manufactured.
  • the optical matrix device including the active matrix substrate is manufactured.
  • the optical matrix device including the passive matrix substrate may be manufactured.

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)

Abstract

Cette invention porte sur un procédé de fabrication d'un dispositif à matrice optique et sur un appareil de fabrication d'un dispositif à matrice optique.  Dans la fabrication d'un film semi-conducteur, d'un film isolant et d'un film électro-conducteur pour un dispositif à matrice optique, des gouttelettes de liquide en tant que matériau pour chaque film, projetées par une buse de jet d'encre, sont exposées goutte-à-goutte à un faisceau laser pour un durcissement thermique ou un photo-durcissement. Selon l’agencement précédent, les gouttelettes de liquide déposées sur le substrat isolant ne sont pas déplacées, et aucun réservoir de liquide en résultat d'une coalescence de gouttelettes de liquide adjacentes n'est formé. Par conséquent, un motif de film peut être formé conformément à un motif de film déposé. Suite au dépôt des gouttelettes de liquide, les gouttelettes de liquide sont instantanément durcies. Ainsi, la hauteur des gouttelettes de liquide peut être maintenue et l'épaisseur de film du motif de film peut être formée de façon régulière.
PCT/JP2008/058936 2008-05-15 2008-05-15 Procédé de fabrication de dispositif à matrice optique et appareil de fabrication de dispositif à matrice optique WO2009139060A1 (fr)

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PCT/JP2008/058936 WO2009139060A1 (fr) 2008-05-15 2008-05-15 Procédé de fabrication de dispositif à matrice optique et appareil de fabrication de dispositif à matrice optique

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PCT/JP2008/058936 WO2009139060A1 (fr) 2008-05-15 2008-05-15 Procédé de fabrication de dispositif à matrice optique et appareil de fabrication de dispositif à matrice optique

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WO2009139060A1 true WO2009139060A1 (fr) 2009-11-19

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011154184A3 (fr) * 2010-06-10 2012-03-15 Robert Bosch Gmbh Procédé et dispositif pour mettre en contact un substrat semi-conducteur par un procédé d'impression par jet d'encre
JP2012088233A (ja) * 2010-10-21 2012-05-10 High Energy Accelerator Research Organization 放射線計測システムの製造方法
WO2014112554A1 (fr) * 2013-01-16 2014-07-24 コニカミノルタ株式会社 Méthode et appareil de formation de film fin
WO2018180803A1 (fr) * 2017-03-29 2018-10-04 住友重機械工業株式会社 Appareil et procédé de formation de film
US10672836B2 (en) 2015-07-08 2020-06-02 Panasonic Intellectual Property Management Co., Ltd. Imaging device

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JPH11204529A (ja) * 1998-01-19 1999-07-30 Seiko Epson Corp パターン形成方法および基板製造装置
JP2005095849A (ja) * 2003-02-26 2005-04-14 Seiko Epson Corp 機能性材料定着方法、機能性材料定着装置、デバイス製造方法、電気光学装置及び電子機器
JP2007050329A (ja) * 2005-08-17 2007-03-01 Seiko Epson Corp 描画装置、デバイス及び電気光学装置並びに電子機器
JP2007054704A (ja) * 2005-08-23 2007-03-08 Seiko Epson Corp 描画システム、デバイス及び電気光学装置並びに電子機器

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11204529A (ja) * 1998-01-19 1999-07-30 Seiko Epson Corp パターン形成方法および基板製造装置
JP2005095849A (ja) * 2003-02-26 2005-04-14 Seiko Epson Corp 機能性材料定着方法、機能性材料定着装置、デバイス製造方法、電気光学装置及び電子機器
JP2007050329A (ja) * 2005-08-17 2007-03-01 Seiko Epson Corp 描画装置、デバイス及び電気光学装置並びに電子機器
JP2007054704A (ja) * 2005-08-23 2007-03-08 Seiko Epson Corp 描画システム、デバイス及び電気光学装置並びに電子機器

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011154184A3 (fr) * 2010-06-10 2012-03-15 Robert Bosch Gmbh Procédé et dispositif pour mettre en contact un substrat semi-conducteur par un procédé d'impression par jet d'encre
JP2012088233A (ja) * 2010-10-21 2012-05-10 High Energy Accelerator Research Organization 放射線計測システムの製造方法
WO2014112554A1 (fr) * 2013-01-16 2014-07-24 コニカミノルタ株式会社 Méthode et appareil de formation de film fin
JPWO2014112554A1 (ja) * 2013-01-16 2017-01-19 コニカミノルタ株式会社 薄膜形成方法及び薄膜形成装置
US10672836B2 (en) 2015-07-08 2020-06-02 Panasonic Intellectual Property Management Co., Ltd. Imaging device
US11094746B2 (en) 2015-07-08 2021-08-17 Panasonic Intellectual Property Management Co., Ltd. Imaging device
US11793008B2 (en) 2015-07-08 2023-10-17 Panasonic Intellectual Property Management Co., Ltd. Imaging device
WO2018180803A1 (fr) * 2017-03-29 2018-10-04 住友重機械工業株式会社 Appareil et procédé de formation de film
CN110446558A (zh) * 2017-03-29 2019-11-12 住友重机械工业株式会社 膜形成装置及膜形成方法
JPWO2018180803A1 (ja) * 2017-03-29 2020-02-06 住友重機械工業株式会社 膜形成装置及び膜形成方法
TWI724283B (zh) * 2017-03-29 2021-04-11 日商住友重機械工業股份有限公司 膜形成裝置及膜形成方法

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