WO2009122790A1 - Appareil de traitement de substrat et procédé de traitement de substrat - Google Patents

Appareil de traitement de substrat et procédé de traitement de substrat Download PDF

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Publication number
WO2009122790A1
WO2009122790A1 PCT/JP2009/052613 JP2009052613W WO2009122790A1 WO 2009122790 A1 WO2009122790 A1 WO 2009122790A1 JP 2009052613 W JP2009052613 W JP 2009052613W WO 2009122790 A1 WO2009122790 A1 WO 2009122790A1
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WO
WIPO (PCT)
Prior art keywords
carrier gas
substrate
gas
processing
gas supply
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PCT/JP2009/052613
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English (en)
Japanese (ja)
Inventor
正幸 原島
英介 森崎
洋克 小林
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東京エレクトロン株式会社
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Publication of WO2009122790A1 publication Critical patent/WO2009122790A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4557—Heated nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Definitions

  • the present invention relates to a substrate processing apparatus and a substrate processing method for performing predetermined processing on a substrate.
  • the substrate is generally heated to a high temperature (eg, 1000 ° C. or higher).
  • a high temperature eg, 1000 ° C. or higher.
  • Processing is performed (see Patent Documents 1 and 2).
  • a substrate holding unit susceptor
  • a substantially cylindrical processing container is used to hold the substrate to make the inside of the processing container a reduced-pressure atmosphere, and a predetermined gas (deposition gas) Etc.) are known to be supplied from one direction along the surface to be processed of the substrate.
  • the processing gas is thermally decomposed on the surface to be processed of the substrate, and a thin film having excellent crystallinity grows on the surface to be processed.
  • the in-plane temperature distribution of the substrate temperature affects the in-plane uniformity such as the crystallinity and film thickness of the thin film formed on the processing surface of the substrate and the carrier density in the film.
  • a resistance heater is provided around the substrate holder and the substrate is heated by heating the entire substrate holder to a high temperature by heater heating, or induction heating by a coil wound around the substrate holder is used. Then, there is one that heats the substrate by heating the entire substrate holding part to a high temperature.
  • the carrier gas and processing gas at a lower temperature for example, several tens to several hundreds of degrees C Flows from the upstream side of the substrate holding part toward the downstream side along the surface to be processed of the substrate, so that the temperature on the upstream side of the substrate holding part is lower than the temperature on the downstream side. For this reason, also on the surface to be processed of the substrate held by the substrate holding part, the temperature on the upstream side is lower than the temperature on the downstream side, and the in-plane uniformity of the substrate temperature is reduced.
  • the present invention has been made in view of the above problems, and its object is to heat the substrate by heating the substrate holder and form a predetermined gas flow along the surface to be processed of the substrate.
  • Substrate processing apparatus and substrate capable of improving temperature uniformity of the substrate holding part by suppressing a decrease in the upstream temperature of the substrate holding part and thus improving in-plane uniformity of the substrate temperature. It is to provide a processing method.
  • a substrate processing apparatus for performing a predetermined process on a substrate by forming a flow of a processing gas along a surface to be processed of the substrate.
  • a processing container for forming a gas flow path formed in a cylindrical shape from one end side to the other end side, a substrate holding portion provided in the middle of the gas flow path for holding the substrate, and the substrate Supplying the processing gas to the gas flow path from a substrate holding part heating section for heating the holding section to heat the substrate, and a processing gas supply nozzle provided upstream of the substrate holding section of the gas flow path
  • a carrier gas supply unit for supplying a carrier gas for transferring the process gas from a carrier gas supply nozzle provided on the upstream side of the process gas supply nozzle of the gas channel to the gas channel.
  • a substrate processing apparatus is characterized in that a carrier gas heating unit for heating the carrier gas supplied to the gas flow path is
  • the carrier gas supplied from the carrier gas supply nozzle is upstream of the substrate holding part, that is, the substrate holding part. Since the heating is performed before reaching the upstream side of the substrate, it is possible to suppress the decrease in the upstream temperature of the substrate holding unit as much as possible. Thereby, the uniformity of the temperature of the substrate holding part can be improved, and as a result, the in-plane uniformity of the substrate temperature can be improved. Further, since the temperature difference between the upstream side and the downstream side of the substrate holding unit can be controlled by controlling the heating temperature of the carrier gas by the carrier gas heating unit, the in-plane distribution of the substrate temperature can be controlled thereby.
  • the carrier gas supply nozzle and the process gas supply nozzle are separated, and the carrier gas is heated by the carrier gas heating unit upstream of the process gas supply nozzle, so that only the carrier gas is heated without heating the process gas. can do. Thereby, it is possible to prevent generation of particles by thermal decomposition before the processing gas reaches the substrate holding portion.
  • the processing gas supply nozzle is configured to have a plurality of processing gas ejection ports arranged in the width direction of the gas flow path and opening toward the substrate holding portion
  • the carrier gas supply nozzle includes the gas You may comprise so that it may have several carrier gas jet nozzles which were arranged in the width direction of the flow path and opened toward the said board
  • the carrier gas heating unit is provided, for example, between the carrier gas supply nozzle and the processing gas supply nozzle, and is configured to heat the carrier gas ejected from each carrier gas ejection port.
  • the carrier gas heating unit between the carrier gas supply nozzle and the processing gas supply nozzle, only the carrier gas supplied from the upstream side without heating the processing gas supplied from the downstream side is provided. Can be heated. Thereby, it is possible to prevent generation of particles by thermal decomposition before the processing gas reaches the substrate holding portion.
  • the carrier gas heating unit on the upstream side of the processing gas supply nozzle, the processing gas supplied from the processing gas supply nozzle does not touch the carrier gas heating unit. For this reason, it can prevent that process gas reacts with the surface of a carrier gas heating part, and a particle adheres to a carrier gas heating part.
  • the carrier gas heating unit is configured to heat the carrier gas by a long heater element disposed so as to extend along the arrangement direction of the carrier gas ejection ports, for example.
  • the long heater element is composed of, for example, a rod-shaped member. According to this, since the carrier gas ejected from each carrier gas ejection port can be uniformly heated, the in-plane uniformity of the substrate temperature can be further improved.
  • the heater element may be composed of a plurality of rod-shaped members, which may be arranged in parallel along the gas flow path, or may be composed of a plate-shaped member.
  • the carrier gas heating unit may heat the carrier gas by a coiled heater element housed in a groove formed on the inner wall of the processing container so as to surround the gas flow path. If comprised in this way, heat can be given to the carrier gas injected from each carrier gas outlet from four directions, and the heating efficiency of carrier gas can be improved more.
  • the carrier gas heating unit heats the carrier gas ejected from each carrier gas ejection port by a heater element provided in a flow path to each carrier gas ejection port in the carrier gas supply nozzle. It may be configured. In this case, it is preferable that the heater element is housed in a groove provided in the middle of the flow path of each carrier gas supply nozzle.
  • the carrier gas can be heated without being heated by the carrier gas heating section and ejected from each carrier gas ejection port. Further, since the carrier gas is heated in the carrier gas supply nozzle, the heating efficiency can be further improved.
  • the substrate processing apparatus further includes an upstream temperature sensor that detects a temperature upstream of the substrate holder, a downstream temperature sensor that detects a temperature downstream of the substrate holder, and the upstream temperature sensor; A control unit that controls the upstream side and the downstream side temperature of the substrate holding unit by controlling the output of the carrier gas heating unit based on each temperature detected by the downstream temperature sensor. Good.
  • the in-plane uniformity of the substrate temperature can be improved by automatically controlling the temperatures on the upstream side and the downstream side of the substrate holding part.
  • the in-plane distribution of the substrate temperature can be controlled by adjusting the temperature difference between the upstream side and the downstream side of the substrate holding portion in accordance with the type of substrate processing.
  • a substrate processing apparatus that performs a predetermined process on the substrate by forming a predetermined gas flow along a surface to be processed of the substrate.
  • the substrate processing apparatus is provided in the middle of the gas flow path, a processing vessel that is formed in a cylindrical shape and forms a gas flow path from one end side to the other end side in the inside thereof, A substrate holding unit for holding the substrate; a substrate holding unit heating unit for heating the substrate holding unit to heat the substrate; and the processing gas provided upstream of the substrate holding unit in the gas flow path.
  • a processing gas supply unit that supplies the processing gas from the supply nozzle to the gas flow path, and a carrier gas that is provided upstream of the processing gas supply nozzle in the gas flow path and transfers the processing gas from the carrier gas supply nozzle
  • the gas A carrier gas supply unit for supplying the gas to the channel; and a carrier gas heating unit for heating the carrier gas supplied to the gas channel on the upstream side of the processing gas supply nozzle of the gas channel.
  • the substrate holding part is heated and the carrier gas is heated and supplied, and the processing gas is supplied on the flow, the decrease in the temperature on the upstream side of the substrate holding part is suppressed. As a result, the uniformity of the temperature of the substrate holding part can be improved.
  • the substrate processing apparatus includes an upstream temperature sensor that detects a temperature on the upstream side of the substrate holding unit and a downstream temperature sensor that detects a temperature on the downstream side of the substrate holding unit.
  • a step of controlling the upstream and downstream temperatures of the substrate holding unit by controlling the output of the carrier gas heating unit based on each temperature detected by the temperature sensor and the downstream temperature sensor. Also good.
  • the temperature on the upstream side and the downstream side of the substrate holding unit can always be made uniform, and the temperature on the upstream side and the downstream side of the substrate holding unit can be adjusted to have a desired in-plane distribution.
  • 1 sccm is (10 ⁇ 6 / 60) m 3 / sec.
  • the processing gas flows along the processing target surface of the substrate from the upstream side to the downstream side of the substrate holding unit along the flow of the heated carrier gas.
  • the decrease can be suppressed, and the uniformity of the temperature of the substrate holder can be improved.
  • the in-plane uniformity of the substrate temperature can be improved.
  • the temperature difference between the upstream side and the downstream side of the substrate holding part can be controlled by controlling the heating temperature of the carrier gas, the in-plane distribution of the substrate temperature can thereby be controlled.
  • FIG. 1 is a longitudinal sectional view showing a schematic configuration of a substrate processing apparatus 100 according to an embodiment of the present invention
  • FIG. 2 is a perspective view showing a partial schematic configuration in the substrate processing apparatus 100.
  • a substrate processing apparatus 100 that performs film formation processing by epitaxial growth on a semiconductor wafer hereinafter simply referred to as “wafer”.
  • a substrate processing apparatus 100 is formed in a cylindrical shape, a processing container 102 that forms a gas flow path from one end side to the other end side in the inside thereof, and is provided in the middle of the gas flow path.
  • a processing gas supply unit 200 that supplies processing gas from the nozzle 206 to the gas flow path, and a carrier gas that transfers the processing gas from the carrier gas supply nozzle 226 provided upstream of the processing gas supply nozzle 206 in the gas flow path.
  • a heating unit 240 is provided in a cylindrical shape, a processing container 102 that forms a gas flow path from one end side to the other end side in the inside
  • the processing container 102 is made of a material having high heat resistance and high corrosion resistance, such as aluminum, stainless steel, and quartz glass.
  • the processing container 102 is mainly composed of a container body 103 formed in, for example, a rectangular tube shape having both ends opened.
  • the upstream opening end of the container body 103 is closed by an upstream flange 104A where a wafer W loading / unloading port is formed, and the downstream opening end of the container body 103 is blocked by a downstream flange 104B where an exhaust port is formed. It is blocked.
  • the exhaust part 130 which exhausts the inside of the processing container 102 is connected to the exhaust port of the downstream flange 104B.
  • the exhaust unit 130 includes an exhaust device 132 including, for example, a vacuum pump.
  • the exhaust device 132 is connected to the exhaust port of the downstream flange 104 ⁇ / b> B through an exhaust pipe 134.
  • the exhaust pipe 134 is provided with a conductance variable valve 136.
  • a pressure sensor 138 for measuring the pressure in the processing container 102 is provided in the processing container 102.
  • the pressure sensor 138 and the conductance variable valve 136 are connected to the control unit 150.
  • the control unit 150 controls the opening of the conductance variable valve 136 based on the pressure value detected by the pressure sensor 138 to increase / decrease the exhaust amount from the processing container 102, so that the processing container 102 has a predetermined vacuum pressure. The pressure can be reduced.
  • the carrier gas from the carrier gas supply nozzle 226 and the processing gas from the processing gas supply nozzle 206 are transferred to a wafer W in a hot wall tube 112, which will be described later, constituting the substrate holding unit 108.
  • the processing gas and the carrier gas are supplied from the upstream flange 104A side in the processing container 102 and exhausted to the outside from the exhaust port of the downstream flange 104B, whereby a constant gas flow is generated in the processing container 102. It is formed.
  • a gas flow path here is formed in the processing container 102 from one end side to the other end side. That is, the gas flow path here is formed by the inner wall of the container main body 103 and the inner wall of the hot wall pipe 112 constituting the substrate holding unit 108.
  • a gate valve 106 for opening and closing the carry-in / out port is provided at the carry-in / out port of the wafer W of the upstream flange 104A.
  • the wafer W is transferred into and out of the processing chamber 102 via the gate valve 106 by a transfer arm (not shown).
  • the substrate holding unit 108 is roughly composed of a mounting table 110 on which the wafer W is mounted, and a hot wall tube (heated structure) 112 formed around the mounting table 110.
  • the substrate holding unit 108 (the mounting table 110 and the hot wall tube 112) is heated to a high temperature by a substrate holding unit heating unit 140 described later.
  • the heat insulating member 114 is interposed between the outer wall of the hot wall pipe 112 heated to a high temperature and the inner wall of the container body 103. This prevents heat from the hot wall tube 112 from escaping to the container body 103.
  • the mounting table 110 is formed in a substantially disc shape, for example, and is fixed to the inner bottom surface of the hot wall pipe 112.
  • the wafer W is loaded into the processing container 102 by a transfer mechanism (not shown) such as a transfer arm and placed on the substrate placement surface on the placement table 110.
  • a concave portion (not shown) that is slightly larger than the outer periphery of the wafer W is formed on the substrate mounting surface.
  • the wafer W is loaded by a transfer arm or the like, the wafer W is placed in the concave portion of the substrate mounting surface. It is mounted on the mounting table 110 so as to enter.
  • the wafer W is prevented from shifting even if a carrier gas or a processing gas flows along the surface of the wafer W.
  • the hot wall pipe 112 is slightly smaller than the inner wall of the processing container 102, and is formed in, for example, a rectangular tube shape having both ends opened, and is disposed along the longitudinal direction of the processing container 102. Thereby, the processing gas and the carrier gas flow from one end to the other end in the hot wall pipe 112 and flow along the surface to be processed of the wafer W.
  • the hot wall tube 112 is made of a material whose temperature is likely to rise by induction heating, for example, a high-density carbon material.
  • the heat insulating member 114 is made of, for example, a low density carbon material. It is preferable that the carbon material constituting the heat insulating member 114 has a remarkably large porosity relative to the carbon material constituting the hot wall tube 112. As a result, the heat of the hot wall pipe 112 that has become high temperature by induction heating is not transmitted to the container main body 103 of the processing container 102, and thermal damage or outgassing of the processing container 102 can be prevented.
  • the processing container 102 is provided with a substrate holder heating unit 140 that heats the substrate holder 108 to a high temperature.
  • the substrate holding unit heating unit 140 includes a coil 141 wound around the outside of the processing container 102.
  • the unit 108 is configured to be induction heated.
  • the coil 141 is wound in a range where the substrate holding part 108 is disposed outside the processing container 102.
  • a high frequency power source 142 is connected to the coil 141.
  • the shape of the mounting table 110 and the hot wall tube 112 and the arrangement of the heat insulating member 114 can be optimized so as to improve the in-plane uniformity of the temperature of the wafer W, and the position and the number of turns of the coil 141 can be adjusted accordingly. preferable.
  • the mounting table 110 and the hot wall tube 112 are induction heated. Therefore, heat is transmitted from the mounting table 110 to the wafer W and also from the hot wall pipe 112 having a larger volume, so that the wafer W can be heated more efficiently. Further, since the hot wall tube 112 is formed so as to surround the wafer W, the entire wafer W can be heated by radiant heat. As a result, the wafer W can be heated more uniformly. The wafer W is heated to 1600 ° C., for example.
  • the substrate holding unit 108 may be provided with temperature sensors for detecting the upstream and downstream temperatures, respectively.
  • a temperature sensor 116A is built in the upstream side of the mounting table 110 (for example, a portion near the opening on the upstream side of the hot wall pipe 112), and the downstream side of the mounting table 110 (for example, The temperature sensor 116B is disposed in a portion near the opening on the downstream side of the hot wall pipe 112.
  • the temperature sensors 116A and 116B are composed of, for example, thermocouples.
  • Each temperature sensor 116 ⁇ / b> A, 116 ⁇ / b> B is connected to the control unit 150.
  • control part 150 controls the output of the carrier gas heating part mentioned later based on the temperature of the upstream of the mounting base 110 detected from each temperature sensor 116A, 116B, for example.
  • the number of temperature sensors is not limited to the above, and three or more temperature sensors may be provided.
  • the processing gas supply unit 200 includes a processing gas supply source 202.
  • a processing gas supply nozzle 206 is connected to the processing gas supply source 202 via a processing gas supply pipe 208.
  • the processing gas supply pipe 208 is provided with a mass flow controller 210 that controls the flow rate of the processing gas and a valve 212 that opens and closes the processing gas supply pipe 208.
  • the mass flow controller 210 and the valve 212 are connected to the control unit 150.
  • the processing gas supply nozzle 206 is provided to be separated from the carrier gas supply nozzle 226 on the downstream side.
  • the processing gas supply nozzle 206 is disposed in the width direction of the gas flow path in the processing container 102.
  • the processing gas supply nozzle 206 is formed in an elongated shape according to the opening width on the upstream side of the hot wall pipe 112, for example, and is provided upright on the bottom of the inner wall of the processing container 102.
  • the tip of the processing gas supply nozzle 206 is bent toward the hot wall pipe 112, and a plurality of processing gas ejection ports 204 are formed. Specifically, the processing gas ejection ports 204 are arranged perpendicular to the gas flow path in the processing container 102 and open toward the substrate holding unit 108. These processing gas ejection ports 204 communicate with a processing gas supply pipe 208 through a flow path in the processing gas supply nozzle 206.
  • a film forming gas such as SiH 4 gas or C 3 H 8 gas is supplied as a processing gas.
  • a dopant gas such as N 2 , a dilution gas of the film forming gas, and the like may be supplied together with the film forming gas as necessary.
  • SiH 4 gas or C 3 H 8 gas is supplied as a film forming gas.
  • trimethylaluminum (TMA) gas or N 2 gas may be added to the processing gas to adjust the electrical characteristics of the SiC film grown on the wafer W.
  • the flow path in the processing gas supply nozzle 206 communicating with the processing gas ejection port 204 may be one system or a plurality of systems.
  • each processing gas jet port 204 ejects SiH 4 gas and C 3 H 8 gas.
  • the jetting nozzles alternately and configure the flow path of the processing gas supply nozzle 206 communicating with them to be a separate system.
  • the processing gas supply source 202 is also divided into two systems, one supplying SiH 4 gas and the other supplying C 3 H 8 gas, and is connected to the processing gas outlet 204 for supplying each processing gas. Each may be supplied to the road.
  • SiH 4 gas and C 3 H 8 gas ejected from each processing gas ejection port 204 can be mixed and supplied to the surface to be processed of the wafer W mounted on the mounting table 110.
  • the carrier gas supply unit 220 includes a carrier gas supply source 222.
  • a carrier gas supply nozzle 226 is connected to the carrier gas supply source 222 via a carrier gas supply pipe 228.
  • the carrier gas supply pipe 228 is provided with a mass flow controller 230 that controls the flow rate of the carrier gas and a valve 232 that opens and closes the carrier gas supply pipe 228.
  • the mass flow controller 230 and the valve 232 are connected to the control unit 150.
  • the carrier gas supply nozzle 226 is configured in substantially the same manner as the processing gas supply nozzle 206 and is arranged in parallel upstream of the processing gas supply nozzle 206.
  • the carrier gas supply nozzle 226 is formed in an elongated shape at least equal to or larger than the width of the processing gas supply nozzle 206 and is provided upright on the bottom of the inner wall of the processing container 102.
  • the tip of the carrier gas supply nozzle 226 is bent toward the hot wall pipe 112, and a plurality of carrier gas ejection ports 224 are formed.
  • the carrier gas ejection ports 224 are arranged perpendicular to the gas flow path in the processing container 102 and open toward the substrate holding unit 108.
  • These carrier gas outlets 224 communicate with the carrier gas supply pipe 228 through a flow path in the carrier gas supply nozzle 226.
  • H 2 gas is supplied from the carrier gas supply source 222.
  • the carrier gas is supplied at a larger flow rate than the processing gas, for example, at a flow rate of 1000 times or more the processing gas flow rate.
  • the processing gas supply nozzle 206 is located at one end side of the processing container 102, that is, upstream of the substrate holding part 108.
  • the carrier gas supply nozzle 226 is provided closer to the upstream flange 104A than the processing gas supply nozzle 206 is provided on the side flange 104A side. Therefore, in the processing container 102, the carrier gas supply nozzle 226, the processing gas supply nozzle 206, and the substrate holding unit 108 are arranged in this order from the upstream flange 104A to the gas flow path.
  • each processing gas outlet 204 and each carrier gas outlet 224 are arranged perpendicularly to the gas flow path in the width direction in the processing container 102, a uniform gas flow (layer) in the width direction of the gas flow path. Flow).
  • the carrier gas heating unit 240 is provided between the carrier gas supply nozzle 226 and the processing gas supply nozzle 206, for example, as shown in FIG. Thus, only the carrier gas can be heated without heating the processing gas by the carrier gas heating unit 240. Thereby, it is possible to prevent generation of particles by thermal decomposition before the processing gas reaches the substrate holding unit 108.
  • the carrier gas heating unit 240 is composed of a long heater element.
  • the heater element 242 is made of a refractory metal material such as W, Mo, or Ta.
  • the heater element 242 is connected to a heater power supply 244 so that the output (temperature) of the heater element 242 can be changed according to the amount of power supplied from the heater power supply 244.
  • the heater power supply 244 is connected to the control unit 150, and the control unit 150 controls the amount of electric power applied to the heater element 242 based on a preset temperature of the heater element 242, so that the heater The temperature of the element 242 can be adjusted.
  • the heater element 242 is disposed between the processing gas supply nozzle 206 and the carrier gas supply nozzle 226 so as to extend along the arrangement direction of the plurality of carrier gas ejection ports 224.
  • the heater element 242 is accommodated in a groove 160 formed on the bottom of the inner wall of the processing container 102. Thereby, the heater element 242 can be provided in the processing container 102 without disturbing the flow of gas flowing in the processing container 102. A specific configuration example of the heater element 242 will be described later.
  • Each unit of the substrate processing apparatus 100 configured as described above is controlled by the control unit 150 described above.
  • the control unit 150 controls the output of the high-frequency power source 142 and the mass flow controllers 210 and 230, the valves 212 and 232, and the conductance variable valve 136 based on the pressure value detected by the pressure sensor 138.
  • control necessary for processing of the wafer W such as output control of the heater power supply 244 based on the temperatures detected by the temperature sensors 116A and 116B, and opening / closing control of the gate valve 106, is performed.
  • the substrate holding unit 108 is heated by induction heating by the coil 141 to heat the wafer W, and the carrier gas
  • H 2 gas is supplied as a carrier gas from the supply nozzle 226 and, for example, SiH 4 gas, C 3 H 8 gas, and N 2 are supplied as processing gases from the processing gas supply nozzle 206 to exhaust the inside of the processing vessel 102.
  • the inside of the processing vessel 102 is reduced to a predetermined vacuum pressure.
  • a carrier gas and a process gas flow are formed along the surface to be processed of the wafer W toward the substrate holding unit 108.
  • the processing gas is heated on the surface to be processed of the wafer W to cause a chemical reaction, and, for example, a SiC film (single crystal film) mainly composed of Si and C is epitaxially grown on the wafer W.
  • the carrier gas is supplied toward the substrate holding unit 108 without being heated, a carrier gas having a temperature much lower than that is blown onto the substrate holding unit 108 heated to a high temperature.
  • the temperature on the upstream side of the holding unit 108 is lower than the temperature on the downstream side.
  • the temperature on the upstream side is lower than the temperature on the downstream side, and the in-plane uniformity of the substrate temperature is reduced. End up.
  • an undesired polycrystalline film grows in a low-temperature region of the wafer W or a defect is generated in the crystal, so that a high-quality SiC single crystal film is formed over the entire surface to be processed of the wafer W. I can't.
  • the carrier gas is heated by the carrier gas heating unit 240 and supplied toward the substrate holding unit 108, thereby suppressing a decrease in the upstream temperature of the substrate holding unit 108.
  • the in-plane uniformity of the substrate temperature can be improved.
  • FIG. 3 is a partial longitudinal sectional view of the carrier gas heating unit.
  • the heater element 242 is accommodated in a groove 160 formed at the bottom of the inner wall of the processing container 102.
  • the heater element 242 is disposed between the carrier gas supply nozzle 226 and the processing gas supply nozzle 206 and is disposed so as to extend along the arrangement direction of the plurality of carrier gas ejection ports 224. Thereby, the heater element 242 can directly heat the carrier gas ejected from the plurality of carrier gas ejection ports 224.
  • the inner surface of the groove 160 is covered with a heat insulating member 162, and the surface of the heat insulating member 162 is covered with a cover member 164 made of SiC.
  • the heat insulating member 162 is made of, for example, a low-density carbon material.
  • the heater element 242 generates heat at, for example, 1000 to 2000 ° C. according to the electric power applied from the heater power supply 244.
  • a carrier gas indicated by a white arrow in FIG. 3
  • the heater element 242 that generates heat at a high temperature with respect to the carrier gas immediately after the ejection.
  • Heat indicated by broken arrows in FIG. 3) is transferred by convection or the like, and the carrier gas is heated.
  • the heating temperature of the carrier gas can be adjusted by controlling the power applied to the heater element 242 from the heater power supply 244.
  • the electric power applied to the heater element 242 is controlled according to the set temperature of the heater element 242 set in advance by the control unit 150, for example.
  • the set temperature of the heater element 242 is high.
  • the processing gas mixed on the downstream side is thermally decomposed before reaching the hot wall pipe 112.
  • the carrier gas is heated to 1000 ° C. or higher.
  • a case where the set temperature of the heater element 242 is set to 1000 to 2000 ° C. is taken as an example.
  • the heater element 242 in the groove portion 160 via the heat insulating member 162 and the cover member 164, even if electric power is applied to the heater element 242 and the temperature rises, the temperature of the groove portion 160 and the surrounding members increases. It is possible to prevent contamination from occurring.
  • the processing gas can be supplied into the hot wall pipe 112 in a stable carrier gas flow.
  • the carrier gas supply nozzle 226 and the processing gas supply nozzle 206 are arranged side by side in the direction of the gas flow path, and the heater element 242 is arranged between them.
  • the heat generated by the heater element 242 can be accurately transmitted to the carrier gas ejected from each carrier gas ejection port 224, while being ejected from each processing gas ejection port 204.
  • the process gas can be prevented from directly transferring heat. Therefore, it is possible to prevent the processing gas from being thermally decomposed by the heat generated by the heater element 242 and to generate particles, and to supply a high-quality processing gas into the hot wall pipe 112.
  • FIG. 4 is a flowchart showing a specific example of the film forming process according to the present embodiment.
  • the controller 150 performs the film forming process by controlling each part of the substrate processing apparatus 100 based on the flowchart.
  • the wafer W to be subjected to the film forming process is placed on the mounting table 110 in the processing container 102 by a transfer arm (not shown). With the gate valve 106 closed, the inside of the processing chamber 102 is reduced to a predetermined vacuum pressure by the exhaust unit 130, and the following film forming process is performed.
  • step S110 the high frequency power supply 142 is controlled to apply high frequency power to the coil 141, and the mounting table 110 and the hot wall tube 112 are induction heated.
  • the temperature of the mounting table 110 is measured using the temperature sensors 116A and 116B, and the high frequency power applied to the coil 141 is adjusted so that the temperature of the mounting table 110 becomes a predetermined temperature, for example, 1600 ° C.
  • the wafer W becomes substantially the same temperature as the mounting table 110.
  • the hot wall tube 112 is also induction heated, the entire wafer W surrounded by the hot wall tube 112 is heated uniformly.
  • step S120 the carrier gas supply unit 220 is controlled to supply the carrier gas into the processing vessel 102.
  • the mass flow controller 230 controls the flow rate of the carrier gas to, for example, 50 to 200 slm (standard liter / min).
  • the carrier gas ejected from the plurality of carrier gas ejection ports 224 of the carrier gas supply nozzle 226 is introduced into the hot wall pipe 112 from the upstream side.
  • the carrier gas flows to the processing surface of the wafer W placed on the mounting table 110 and is exhausted to the outside of the processing chamber 102.
  • a carrier gas flow is formed along the surface to be processed of the wafer W.
  • step S120 the carrier gas is supplied while being heated.
  • the heater power supply 244 is controlled to apply power to the heater element 242 to cause the heater element 242 to generate heat at, for example, 1000 to 2000 ° C.
  • the carrier gas ejected from the plurality of carrier gas ejection ports 224 is heated by receiving heat from the heater element 242 immediately after that.
  • the electric power applied to the heater element 242 is adjusted so that the measured values of the temperature sensor 116A and the temperature sensor 116B are equal or the difference between them is minimized.
  • step S130 the processing gas supply unit 200 is controlled to supply the processing gas into the processing container 102.
  • the flow rate of the processing gas is adjusted to 50 to 500 sccm, for example.
  • the processing gas ejected from the plurality of processing gas ejection ports 204 of the processing gas supply nozzle 206 rides on the flow of the carrier gas ejected from the plurality of carrier gas ejection ports 224 of the carrier gas supply nozzle 226 and flows into the hot wall pipe 112. It is introduced into the inside from the upstream side. At this time, since the inside of the processing chamber 102 is evacuated, the carrier gas and the processing gas flow to the processing surface of the wafer W mounted on the mounting table 110 and are exhausted to the outside of the processing chamber 102. Thus, the flow of the carrier gas and the processing gas is formed along the processing surface of the wafer W.
  • the processing gas such as SiH 4 gas and C 3 H 8 gas is heated and thermally decomposed, for example, an SiC single crystal film is epitaxially grown.
  • the temperature of the entire processing surface of the wafer W is uniform, a good SiC single crystal film can be formed over the entire processing surface of the wafer W.
  • step S130 the temperature of the mounting table 110 may be monitored using the temperature sensors 116A and 116B. This is because the in-plane uniformity of the temperature of the wafer W may be reduced depending on the flow rate and temperature of the processing gas supplied into the hot wall pipe 112 in step S130.
  • step S130 when the difference between the measured values of the temperature sensor 116A and the temperature sensor 116B becomes large, the power applied to the heater element 242 is readjusted so that the difference disappears or the difference becomes minimum. .
  • a predetermined process in this case, a film forming process
  • Such processing for the wafer ends when, for example, a predetermined time elapses when the SiC single crystal film on the wafer W reaches a predetermined thickness.
  • the application of high frequency power to the coil 141 and the application of power to the heater element 242 are stopped in step S140. Further, the supply of the processing gas and the carrier gas to the processing container 102 is stopped, and a series of film forming processes is completed.
  • the carrier gas supplied from the carrier gas supply nozzle 226 is upstream of the substrate holding unit 108. Since the heating is performed on the side, that is, before reaching the upstream side of the substrate holding unit 108, a decrease in the upstream temperature of the substrate holding unit 108 can be suppressed as much as possible. Thereby, the uniformity of the temperature of the substrate holding unit 108 can be improved, and consequently the in-plane uniformity of the substrate temperature can be improved. For example, when film formation is performed by epitaxial growth, a uniform single crystal film can be formed over the entire surface to be processed of the wafer W.
  • the temperature difference between the upstream side and the downstream side of the substrate holding unit 108 can be controlled by controlling the heating temperature of the carrier gas by the carrier gas heating unit 240, the in-plane distribution of the wafer temperature can be controlled thereby. For example, when the cleaning process in the processing container 102 is performed, a desired portion can be concentrated and cleaned by changing the temperature between the upstream side and the downstream side of the substrate holding unit 108.
  • the carrier gas supply nozzle 226 and the process gas supply nozzle 206 are separated, and the carrier gas is heated by the carrier gas heating unit 240 on the upstream side of the process gas supply nozzle 206, so that the carrier gas is not heated without heating the process gas. Only the gas can be heated. Thereby, it is possible to prevent generation of particles by thermal decomposition before the processing gas reaches the substrate holding unit 108.
  • the carrier gas supplied at a flow rate of 100 times or more with respect to the flow rate of the processing gas is heated. Even if the gas is supplied, a decrease in the temperature of the entire gas can be suppressed.
  • start timing of steps S110 to S130 is not limited to the flowchart of FIG.
  • start timings of steps S110 to S130 may be switched or may be started simultaneously.
  • FIG. 5 is a perspective view showing another configuration example of the carrier gas heating unit 250.
  • the heater element 252 shown in FIG. 5 is disposed between the processing gas supply nozzle 206 and the carrier gas supply nozzle 226 so as to surround the gas flow path from the outside. By providing such a carrier gas heating unit 250, heat can be transmitted from four directions to the carrier gas, and the carrier gas can be heated more efficiently.
  • the heater element 252 is heated by electric power from the heater power supply 244.
  • the heater element 252 is accommodated in a groove 170 formed continuously on the bottom, side, and ceiling of the inner wall of the processing vessel 102. In this way, the flow of the carrier gas is not disturbed by the heater element 252 in the processing container 102. Therefore, the processing gas can be supplied toward the substrate holding unit 108 in a stable carrier gas flow.
  • the carrier gas heating unit 240 shown in FIG. 2 has been described with respect to the case where it is configured with one rod-shaped heater element 242, but is not limited thereto, and is configured with a plurality of rod-shaped heater elements 242. May be.
  • a plurality of (for example, three) rod-like heater elements 242A to 242C may be arranged on the inner wall of the processing vessel 102 along the gas flow path.
  • the groove portion 180 is sized to accommodate the heater elements 242A to 242C, for example.
  • the inner surface of the groove 180 is covered with a heat insulating member 182, and the surface of the heat insulating member 182 is covered with a cover member 184 made of SiC.
  • the heat insulating member 182 is made of, for example, a low-density carbon material.
  • the three heater elements 242A to 242C are disposed between the processing gas supply nozzle 206 and the carrier gas supply nozzle 226 and a plurality of carrier gases. It arrange
  • one heater element may be folded in a zigzag and accommodated in the groove portion 180.
  • a plate-like heater element 246 as shown in FIG. Even if this heater element 246 is used, the carrier gas can be heated within a short time by transferring heat from a wider range to the carrier gas.
  • the carrier gas heating unit 240 heats the carrier gas ejected from each carrier gas ejection port 224.
  • the present invention is not limited to this, and the carrier gas heating unit 240 is ejected from the carrier gas ejection port 224. It is also possible to heat before heating.
  • a rod-shaped heater element 242 is provided in a flow path 226a to each carrier gas outlet 224 in the carrier gas supply nozzle 226 to heat the carrier gas ejected from each carrier gas outlet 224. You may comprise as follows.
  • the heater element 242 shown in FIG. 8 is accommodated in a groove 260 formed in the inner wall of the flow path 226a up to the plurality of carrier gas outlets 224 in the carrier gas supply nozzle 226.
  • the groove 260 is formed so as to communicate with the plurality of flow paths 226a.
  • the groove 260 has an inner surface covered with a heat insulating member 262, and the surface of the heat insulating member 262 is covered with a cover member 264 made of SiC.
  • the heat insulating member 262 is made of, for example, a low-density carbon material.
  • the carrier gas flowing in each flow path 226a can be brought into contact with the surface of the heater element 242.
  • the heater element 242 generates heat to 1000 to 2000 ° C., for example, by electric power from the heater power supply 244. Thereby, a high-temperature carrier gas can be ejected from each carrier gas ejection port 224.
  • the heater element 242 in the carrier gas supply nozzle 226 By providing the heater element 242 in the carrier gas supply nozzle 226 in this way, it becomes easier to transfer heat from the heater element 242 to the carrier gas, so that the heating efficiency of the carrier gas can be further improved. Further, the gas flow in the gas flow path in the processing container 102 is not disturbed.
  • heat from the heater element 242 can be prevented from being transmitted to gases other than the carrier gas and various members disposed in the processing vessel 102. For this reason, generation
  • an undesired substance may be deposited on the mounting table and its periphery.
  • the present invention can also be applied to a cleaning process in which such deposits (deposits) are removed by dry etching.
  • the cleaning process for example, it is preferable to intentionally increase the temperature of a portion where there is a large amount of deposits than the temperature of other portions.
  • the gas to be used for cleaning can be heated before being introduced into the hot wall pipe 112. Therefore, the part to be cleaned is selectively heated to a high temperature.
  • the etching rate at that portion can be increased.
  • the flow rate and power consumption of the gas used for cleaning can be suppressed, and the time required for cleaning can be shortened.
  • the present invention is not limited to an epitaxial growth apparatus that grows a single crystal film on a wafer, but also a film forming apparatus that forms a predetermined film on a substrate such as a wafer, an etching processing apparatus that performs a dry etching process on a substrate, and the like. It can be applied to a substrate processing apparatus.
  • the processing vessel 102 and the hot wall tube 112 are both rectangular tubes, but may be cylindrical. Further, the present invention can also be applied to a substrate processing apparatus of the type in which the hot wall tube 112 and the heat insulating member 114 are omitted in the substrate holding unit 108 and the substrate holding unit 108 is configured only by the mounting table 110.
  • the present invention is applicable to a substrate processing apparatus and a substrate processing method for performing predetermined processing on a substrate.

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Abstract

Au moment de la formation d'un flux de gaz le long d'une surface d'un substrat à traiter en chauffant une section tenue de substrat à une température élevée, la réduction de température en amont de la section tenue de substrat due à la fourniture de gaz est supprimée, et l'uniformité de la température de la section tenue de substrat est améliorée. Un appareil de traitement de substrat est doté d'un contenant de traitement (102), un flux de gaz étant formé à partir d'une extrémité vers l'autre extrémité ; d’une section tenue de substrat (108), qui est disposée à une certaine position le long d'un canal de gaz d’un tel flux de gaz, et tient une tranche ; d’une section chauffage de la section tenue de substrat (140) qui chauffe la tranche en chauffant la section tenue de substrat ; d’une buse d'alimentation en gaz de traitement (206) disposée en amont de la section tenue de substrat ; d’une buse d'alimentation en gaz porteur (226) disposée en amont de la buse d'alimentation en gaz de traitement ; et d’une section chauffage de gaz porteur (240) destinée à chauffer un gaz porteur fourni au canal de gaz, en amont de la buse d'alimentation en gaz de traitement.
PCT/JP2009/052613 2008-03-31 2009-02-17 Appareil de traitement de substrat et procédé de traitement de substrat WO2009122790A1 (fr)

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JP2008089411A JP2009246071A (ja) 2008-03-31 2008-03-31 基板処理装置，基板処理方法
JP2008-089411 2008-03-31

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CN103295935B (zh) * 2012-02-22 2017-06-20 东京毅力科创株式会社 基板处理装置
KR101387518B1 (ko) * 2012-08-28 2014-05-07 주식회사 유진테크 기판처리장치

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63233521A (ja) * 1987-03-23 1988-09-29 Nissan Motor Co Ltd 気相反応管
JPH04127432A (ja) * 1990-09-18 1992-04-28 Kyushu Electron Metal Co Ltd 常圧ｃｖｄ装置
JPH0878336A (ja) * 1994-09-09 1996-03-22 Hitachi Ltd 反応処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63233521A (ja) * 1987-03-23 1988-09-29 Nissan Motor Co Ltd 気相反応管
JPH04127432A (ja) * 1990-09-18 1992-04-28 Kyushu Electron Metal Co Ltd 常圧ｃｖｄ装置
JPH0878336A (ja) * 1994-09-09 1996-03-22 Hitachi Ltd 反応処理装置

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