WO2009121344A3 - Verfahren zur herstellung einer solarzelle mit einer zweistufigen dotierung - Google Patents

Verfahren zur herstellung einer solarzelle mit einer zweistufigen dotierung Download PDF

Info

Publication number
WO2009121344A3
WO2009121344A3 PCT/DE2009/000431 DE2009000431W WO2009121344A3 WO 2009121344 A3 WO2009121344 A3 WO 2009121344A3 DE 2009000431 W DE2009000431 W DE 2009000431W WO 2009121344 A3 WO2009121344 A3 WO 2009121344A3
Authority
WO
WIPO (PCT)
Prior art keywords
solar cell
producing
cell substrate
diffusion barrier
doping
Prior art date
Application number
PCT/DE2009/000431
Other languages
English (en)
French (fr)
Other versions
WO2009121344A2 (de
Inventor
Philipp Johannes Rostan
Hartmut Nussbaumer
Original Assignee
Centrotherm Photovoltaics Technology Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centrotherm Photovoltaics Technology Gmbh filed Critical Centrotherm Photovoltaics Technology Gmbh
Publication of WO2009121344A2 publication Critical patent/WO2009121344A2/de
Publication of WO2009121344A3 publication Critical patent/WO2009121344A3/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Verfahren zur Herstellung einer Solarzelle mit einer zweistufigen Dotierung (20a, 20b; 34a, 34b; 44a, 4'4b), bei welchem ein Dotierungsbereich (20; 28; 44) eines Solarzellensubstrats (10; 11) wenigstens abschnittsweise schwach dotiert wird (132), in dem Dotierungsbereich (20; 28; 44) an einer Oberfläche des Solarzellensubstrats (10; 11) eine Diffusionsbarriere (12; 26, 42) ausgebildet wird (102; 122), in die Diffusionsbarriere (12; 26; 42) lokale Öffnungen (16; 30; 47) eingebracht werden (104; 114; 134) und das Solarzellensubstrat (10; 11) in Bereichen der lokalen Öffnungen (16; 30; 47) stark dotiert wird (106; 136), wobei die Diffusionsbarriere (12; 26; 42) thermisch aufgewachsen oder mittels einer chemischen oder physikalischen Abscheidung aus einer Dampfphase auf die Oberfläche des Solärzellensubstrats aufgebracht wird (102; 122).
PCT/DE2009/000431 2008-04-04 2009-04-03 Verfahren zur herstellung einer solarzelle mit einer zweistufigen dotierung WO2009121344A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008017647.8 2008-04-04
DE102008017647A DE102008017647A1 (de) 2008-04-04 2008-04-04 Verfahren zur Herstellung einer Solarzelle mit einer zweistufigen Dotierung

Publications (2)

Publication Number Publication Date
WO2009121344A2 WO2009121344A2 (de) 2009-10-08
WO2009121344A3 true WO2009121344A3 (de) 2010-08-05

Family

ID=41111492

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2009/000431 WO2009121344A2 (de) 2008-04-04 2009-04-03 Verfahren zur herstellung einer solarzelle mit einer zweistufigen dotierung

Country Status (2)

Country Link
DE (1) DE102008017647A1 (de)
WO (1) WO2009121344A2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008049281A1 (de) 2008-09-26 2010-04-08 Centrotherm Photovoltaics Technology Gmbh Diffusionseinrichtung für die Solarzellenfertigung und Verfahren zur Herstellung von Solarzellen
DE102009034087A1 (de) * 2009-07-21 2011-01-27 Solsol Gmbh Verfahren zur Herstellung eines selektiven Solarzellenemitters
DE102009057881A1 (de) * 2009-12-11 2011-06-16 Centrothem Photovoltaics Ag Verfahren zur Laserstrukturierung eines transparenten Mediums und Verwendung des Verfahrens bei der Herstellung eines Halbleiterbauelements

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4131488A (en) * 1975-12-31 1978-12-26 Motorola, Inc. Method of semiconductor solar energy device fabrication
US4152824A (en) * 1977-12-30 1979-05-08 Mobil Tyco Solar Energy Corporation Manufacture of solar cells
US4758525A (en) * 1985-07-15 1988-07-19 Hitachi, Ltd. Method of making light-receiving diode
US5258077A (en) * 1991-09-13 1993-11-02 Solec International, Inc. High efficiency silicon solar cells and method of fabrication
US20050172998A1 (en) * 2004-02-05 2005-08-11 Advent Solar, Inc. Buried-contact solar cells with self-doping contacts
WO2007059551A1 (en) * 2005-11-24 2007-05-31 Newsouth Innovations Pty Limited Low area screen printed metal contact structure and method
DE102007051725A1 (de) * 2007-10-27 2009-05-07 Centrotherm Photovoltaics Technology Gmbh Verfahren zur Kontaktierung von Solarzellen

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU701213B2 (en) 1995-10-05 1999-01-21 Suniva, Inc. Self-aligned locally deep-diffused emitter solar cell
WO2006005116A1 (en) * 2004-07-08 2006-01-19 Newsouth Innovations Pty Limited Laser-formed electrodes for solar cells
DE102006003283A1 (de) * 2006-01-23 2007-07-26 Gp Solar Gmbh Verfahren zur Herstellung eines Halbleiterbauelements mit unterschiedlich stark dotierten Bereichen

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4131488A (en) * 1975-12-31 1978-12-26 Motorola, Inc. Method of semiconductor solar energy device fabrication
US4152824A (en) * 1977-12-30 1979-05-08 Mobil Tyco Solar Energy Corporation Manufacture of solar cells
US4758525A (en) * 1985-07-15 1988-07-19 Hitachi, Ltd. Method of making light-receiving diode
US5258077A (en) * 1991-09-13 1993-11-02 Solec International, Inc. High efficiency silicon solar cells and method of fabrication
US20050172998A1 (en) * 2004-02-05 2005-08-11 Advent Solar, Inc. Buried-contact solar cells with self-doping contacts
WO2007059551A1 (en) * 2005-11-24 2007-05-31 Newsouth Innovations Pty Limited Low area screen printed metal contact structure and method
DE102007051725A1 (de) * 2007-10-27 2009-05-07 Centrotherm Photovoltaics Technology Gmbh Verfahren zur Kontaktierung von Solarzellen

Also Published As

Publication number Publication date
DE102008017647A1 (de) 2009-10-29
WO2009121344A2 (de) 2009-10-08

Similar Documents

Publication Publication Date Title
WO2008008753A3 (en) A method for fabricating a gate dielectric layer utilized in a gate structure
WO2008070266A3 (en) Methods for manufacturing three-dimensional thin-film solar cells
WO2006107532A3 (en) Single wafer thermal cvd processes for hemispherical grained silicon and nano-crystalline grain-sized polysilicon
WO2009075244A1 (ja) 太陽電池の製造方法
WO2006053219A3 (en) Vertical production of photovoltaic devices
WO2012044622A3 (en) Low-temperature dielectric film formation by chemical vapor deposition
WO2010033813A3 (en) Formation of devices by epitaxial layer overgrowth
TW200725753A (en) Method for fabricating silicon nitride spacer structures
WO2008051503A3 (en) Light-emitter-based devices with lattice-mismatched semiconductor structures
WO2008028625A3 (de) Verfahren zur simultanen dotierung und oxidation von halbleitersubstraten und dessen verwendung
WO2011017339A3 (en) Methods of selectively depositing an epitaxial layer
WO2005101524A3 (en) Method of fabricating an optoelectronic device having a bulk heterojunction
WO2008011688A3 (en) GROWTH OF MONOCRYSTALLINE GeN ON A SUBSTRATE
WO2006007077A3 (en) Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films
WO2007103598A3 (en) Silicon photovoltaic cell junction formed from thin film doping source
WO2010138811A3 (en) Method of providing a flexible semiconductor device at high temperatures and flexible semiconductor device thereof
EP2080823A4 (de) Gruppe-iii-element-nitrid-substrat, substrat mit epitaktischer schicht, herstellungsverfahren dafür und verfahren zur herstellung eines halbleiterelements
WO2006037300A3 (de) Verfahren zum herstellen einer schicht aus einem dotierten halbleitermaterial
WO2006053128A8 (en) Pallet based system for forming thin-film solar cells
WO2010015310A3 (de) Solarzelle und verfahren zur herstellung einer solarzelle
WO2005057630A3 (en) Manufacturable low-temperature silicon carbide deposition technology
WO2010017123A3 (en) Methods for forming doped regions in a semiconductor material
WO2010085439A3 (en) Self-aligned selective emitter formed by counterdoping
WO2008147113A3 (en) High efficiency solar cell, method of fabricating the same and apparatus for fabricating the same
TW200940756A (en) Group III nitride semiconductor crystal growing method, group III nitride semiconductor crystal substrate fabrication method, and group III nitride semiconductor crystal substrate

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09728188

Country of ref document: EP

Kind code of ref document: A2

122 Ep: pct application non-entry in european phase

Ref document number: 09728188

Country of ref document: EP

Kind code of ref document: A2