WO2009116467A1 - 透明導電酸化物層およびこれを用いた光電変換装置 - Google Patents
透明導電酸化物層およびこれを用いた光電変換装置 Download PDFInfo
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- WO2009116467A1 WO2009116467A1 PCT/JP2009/054911 JP2009054911W WO2009116467A1 WO 2009116467 A1 WO2009116467 A1 WO 2009116467A1 JP 2009054911 W JP2009054911 W JP 2009054911W WO 2009116467 A1 WO2009116467 A1 WO 2009116467A1
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- oxide layer
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- conductive oxide
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 47
- 239000012535 impurity Substances 0.000 claims abstract description 35
- 239000010409 thin film Substances 0.000 claims abstract description 11
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 27
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 20
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 18
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 239000004215 Carbon black (E152) Substances 0.000 claims description 9
- 239000010408 film Substances 0.000 claims description 9
- 229930195733 hydrocarbon Natural products 0.000 claims description 9
- 150000002430 hydrocarbons Chemical class 0.000 claims description 9
- 239000011787 zinc oxide Substances 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 6
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 claims description 3
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 3
- 239000002019 doping agent Substances 0.000 claims description 3
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 claims description 3
- 238000009832 plasma treatment Methods 0.000 claims description 3
- 238000002834 transmittance Methods 0.000 abstract description 21
- 230000000052 comparative effect Effects 0.000 description 22
- 239000007789 gas Substances 0.000 description 16
- 238000004544 sputter deposition Methods 0.000 description 12
- 229910021417 amorphous silicon Inorganic materials 0.000 description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 150000002500 ions Chemical group 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M14/00—Electrochemical current or voltage generators not provided for in groups H01M6/00 - H01M12/00; Manufacture thereof
- H01M14/005—Photoelectrochemical storage cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
Abstract
Description
2 透明導電酸化物層
3 高導電処理層
4 光電変換ユニット
5 裏面電極層
図1を参照して説明された第一の実施の形態に対応して、実施例1としての透明導電酸化物層が作成された。透光性基板1にはガラスを用い、該基板上にスパッタ法により酸化亜鉛からなる透明導電酸化物層2を形成するためにスパッタ装置の製膜室に投入した。スパッタターゲットとして酸化亜鉛中に2wt%のAlを添加したものを用い、スパッタガスとしてArガスを導入し、基板150℃、圧力0.27Paの条件で、DCスパッタ法により酸化亜鉛を膜厚40nmで形成した。
本比較例では透明導電酸化物層の高導電処理を実施しなかった以外は実施例1と同様にして透明導電酸化物層を作成した。透明導電酸化物層の相対透過率を図3に示す(点線)。
高導電処理層3の形成時に基板温度を30度とした以外は実施例1と同様にして透明導電酸化物層を作成した。
酸化亜鉛層の厚さを50nmとしたこと、高導電処理層作成の際、基板温度を150℃としさらにジボランを用いなかった以外は実施例1と同様にして透明導電酸化物層を作成した。
実施例1と同様に透明導電酸化物層を作成し、さらに基板温度を130℃、200Wの放電電力により、水素を310sccm、ジボランガスを0.05sccmを原料にして、プラズマCVD装置を用いて高導電処理を20分実施した。本比較例における導電処理を実施する事で、透明導電酸化物層のシート抵抗を高導電処理を行っていない試料(比較例1)と比較すると抵抗は0.80倍に、膜の透過率は変わりがなかった。
図1を参照して説明された第一の実施の形態に対応して、実施例3としての透明導電酸化物層が作成された。透光性基板1にはガラスを用い、透明導電酸化物層2としてSnO2を膜厚800nm、シート抵抗10オーム/□、ヘイズ率15~20%の層を作成した。この上に、ボロンドープのp型シリコンカーバイド(SiC)層を10nm、ノンドープの非晶質シリコン光電変換層を200nm、リンドープのn型μc-Si層を20nmの膜厚で、それぞれプラズマCVD法により製膜した。これにより、光電変換ユニットであるpin接合の非晶質シリコン光電変換ユニット4を形成した。
Claims (7)
- 基体上に作製した透明導電酸化物層であり、第一および第二の不純物の含有量が該透明導電酸化物層の内部よりも該透明導電酸化物層の基体とは反対側の表面近傍において高く、且つ、該透明導電酸化物層の表面近傍に炭素原子を含有している事を特徴とする透明導電酸化物層。
- 前記透明導電酸化物層が、酸化亜鉛からなる事を特徴とする請求項1に記載の透明導電酸化物層。
- 前記透明導電酸化物層に含有する第一の不純物がアルミニウム(Al)であって、且つ、第二の不純物がホウ素(B)であることを特徴とする請求項1または請求項2に記載の透明導電酸化物層。
- 前記不純物濃度の含有量が増加している層の膜厚が、5Å以上1000Å以下であることを特徴とする請求項1から請求項3のいずれかに記載の透明導電酸化物層。
- 光入射側より、透明導電酸化物層、少なくとも一つの薄膜光電変換ユニット、裏面電極が順に配置された光電変換装置において、前記透明導電酸化物層あるいは裏面電極のいずれかに前記請求項1から請求項4のいずれかに記載の構造を用いることを特徴とする光電変換装置。
- 基体上に第一の不純物を有する透明導電酸化物層を形成した後、第二の不純物を含有するドーパントガスおよび炭化水素ガスを含む雰囲気中でプラズマ処理する事を特徴とする請求項1から請求項5のいずれかに記載の透明導電酸化物層の形成方法。
- 前記炭化水素ガスがエタン、アセチレンあるいはメタンのいずれかから選択されることを特徴とする請求項6に記載の透明導電酸化物層の形成方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2010503854A JP5404604B2 (ja) | 2008-03-18 | 2009-03-13 | 透明導電酸化物層の形成方法、透明導電酸化物層、並びに、透明導電酸化物層を用いた光電変換装置 |
US12/921,657 US8518833B2 (en) | 2008-03-18 | 2009-03-13 | Transparent electroconductive oxide layer and photoelectric converter using the same |
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JP2008068780 | 2008-03-18 | ||
JP2008-068780 | 2008-03-18 |
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PCT/JP2009/054911 WO2009116467A1 (ja) | 2008-03-18 | 2009-03-13 | 透明導電酸化物層およびこれを用いた光電変換装置 |
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US (1) | US8518833B2 (ja) |
JP (1) | JP5404604B2 (ja) |
WO (1) | WO2009116467A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012101876A1 (ja) * | 2011-01-26 | 2012-08-02 | 三菱電機株式会社 | 透明電極基板およびその製造方法、光電変換装置およびその製造方法、光電変換モジュール |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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EP2523227A1 (en) * | 2011-05-13 | 2012-11-14 | Applied Materials, Inc. | Thin-film solar fabrication process, deposition method for TCO layer, and solar cell precursor layer stack |
JP6378302B2 (ja) * | 2016-12-22 | 2018-08-22 | ファナック株式会社 | アーク溶接ロボットの溶接ワイヤ処理構造 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63102109A (ja) * | 1986-10-17 | 1988-05-07 | 旭硝子株式会社 | 透明電導膜 |
JP2001135149A (ja) * | 1999-11-01 | 2001-05-18 | Tokuyama Corp | 酸化亜鉛系透明電極 |
WO2004112057A1 (ja) * | 2003-06-17 | 2004-12-23 | Nippon Sheet Glass Company, Limited | 透明導電性基板とその製造方法、および光電変換素子 |
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US6342313B1 (en) * | 1998-08-03 | 2002-01-29 | The Curators Of The University Of Missouri | Oxide films and process for preparing same |
US20020084455A1 (en) | 1999-03-30 | 2002-07-04 | Jeffery T. Cheung | Transparent and conductive zinc oxide film with low growth temperature |
JP3942559B2 (ja) * | 2003-06-13 | 2007-07-11 | Tdk株式会社 | 電気化学デバイス |
EP1717341B1 (en) * | 2004-02-16 | 2015-04-15 | Kaneka Corporation | Process for producing transparent conductive film and process for producing tandem thin-film photoelectric converter |
-
2009
- 2009-03-13 US US12/921,657 patent/US8518833B2/en not_active Expired - Fee Related
- 2009-03-13 JP JP2010503854A patent/JP5404604B2/ja not_active Expired - Fee Related
- 2009-03-13 WO PCT/JP2009/054911 patent/WO2009116467A1/ja active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63102109A (ja) * | 1986-10-17 | 1988-05-07 | 旭硝子株式会社 | 透明電導膜 |
JP2001135149A (ja) * | 1999-11-01 | 2001-05-18 | Tokuyama Corp | 酸化亜鉛系透明電極 |
WO2004112057A1 (ja) * | 2003-06-17 | 2004-12-23 | Nippon Sheet Glass Company, Limited | 透明導電性基板とその製造方法、および光電変換素子 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012101876A1 (ja) * | 2011-01-26 | 2012-08-02 | 三菱電機株式会社 | 透明電極基板およびその製造方法、光電変換装置およびその製造方法、光電変換モジュール |
JP5602251B2 (ja) * | 2011-01-26 | 2014-10-08 | 三菱電機株式会社 | 透明電極基板およびその製造方法、光電変換装置およびその製造方法、光電変換モジュール |
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Publication number | Publication date |
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US8518833B2 (en) | 2013-08-27 |
JPWO2009116467A1 (ja) | 2011-07-21 |
JP5404604B2 (ja) | 2014-02-05 |
US20110011461A1 (en) | 2011-01-20 |
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