WO2009110392A1 - Probe card provided with contact units, and method of exchanging contact units - Google Patents

Probe card provided with contact units, and method of exchanging contact units Download PDF

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Publication number
WO2009110392A1
WO2009110392A1 PCT/JP2009/053760 JP2009053760W WO2009110392A1 WO 2009110392 A1 WO2009110392 A1 WO 2009110392A1 JP 2009053760 W JP2009053760 W JP 2009053760W WO 2009110392 A1 WO2009110392 A1 WO 2009110392A1
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WO
WIPO (PCT)
Prior art keywords
contact
contact unit
probe card
motherboard
substrate
Prior art date
Application number
PCT/JP2009/053760
Other languages
French (fr)
Japanese (ja)
Inventor
雄二 中村
Original Assignee
山一電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 山一電機株式会社 filed Critical 山一電機株式会社
Publication of WO2009110392A1 publication Critical patent/WO2009110392A1/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G01R1/06716—Elastic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/073—Multiple probes
    • G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • G01R1/07342—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card the body of the probe being at an angle other than perpendicular to test object, e.g. probe card
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/073—Multiple probes
    • G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • G01R1/07364—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card with provisions for altering position, number or connection of probe tips; Adapting to differences in pitch
    • G01R1/07378—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card with provisions for altering position, number or connection of probe tips; Adapting to differences in pitch using an intermediate adapter, e.g. space transformers
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/006—Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays

Definitions

  • the present invention relates to a probe card including a contact unit and a contact unit replacement method.
  • Electrical characteristic inspection is performed in order to determine whether a plurality of circuits and circuit patterns formed vertically and horizontally on a semiconductor device such as a silicon wafer are good or bad.
  • an inspection apparatus test system including a probe card as shown in Patent Document 1 is used.
  • the probe card includes a probe head having a plurality of spring probes that are electrically connected to each circuit pattern of a silicon wafer as an object to be inspected, and a probe card that sandwiches the probe head. And two fastening members.
  • the two fastening members are arranged facing each other via a stiffener and a probe board.
  • such a probe head includes a bottom board, an intermediate board, and a top board that each have a through hole on a common axis so as to hold a plurality of spring probes in cooperation, and are overlapped with each other. It is configured to include. As a result, when a spring probe deemed defective is replaced, the spring probe is pulled out of the through hole and replaced by removing the top board with the bottom board facing down.
  • the diameter of the probe head increases as the diameter of the silicon wafer to be tested increases. This makes it difficult to disassemble and reassemble the probe head composed of a plurality of boards as described above when replacing one spring probe, which is regarded as defective in the probe head. A plurality of spring probes may be accidentally damaged. In other words, yield and repair of damaged contacts in the probe card manufacturing process are problematic.
  • the present invention is a probe card including a contact unit, and a contact unit replacement method, which includes a contact unit that can be easily replaced individually. It is an object of the present invention to provide a probe card and a method for replacing a contact unit.
  • a probe card including a contact unit includes a plurality of contacts that are in contact with or separated from an input / output signal terminal group in an object to be inspected, and a plurality of contacts.
  • a plurality of contacts each including a substrate supported on one surface for each predetermined number and a conductor layer formed on the opposite surface of the substrate and electrically connected to the plurality of contacts.
  • a plurality of contact units comprising a unit, an external connection terminal, and a mother board that has a conductor layer that electrically connects the plurality of contact unit and the external connection terminal, and supports the plurality of contact units. Is removably bonded directly or indirectly to the surface of the motherboard with a heat-peelable adhesive or brazing material.
  • one contact unit among a plurality of contact units detachably joined to a predetermined position of the mother board described above is repaired with infrared or heated air. It is arranged inside the nozzle for a predetermined time, and after the predetermined time has elapsed, one contact unit is removed from the inside of the repair nozzle, and a new contact unit is bonded to a predetermined position on the motherboard with a bonding material.
  • the plurality of contact units can be adhesively peeled by heat or wax. Since the material is removably bonded directly or indirectly to the surface of the mother board, the contact unit can be easily replaced individually.
  • FIG. 1 is a front view schematically showing an external appearance of a first embodiment of a probe card having a contact unit according to the present invention.
  • FIG. 2 is a top view of the example shown in FIG.
  • FIG. 3 schematically shows a configuration of a test system including a test head in which each embodiment of the probe card including the contact unit according to the present invention is used.
  • FIG. 4 is a plan view of the example shown in FIG.
  • FIG. 5 is a plan view of the liquid crystal panel inspected by the first embodiment of the probe card including the contact unit according to the present invention.
  • FIG. 6 is a front view of the liquid crystal panel shown in FIG.
  • FIG. 7A is a plan view showing the contact unit used in the first embodiment of the probe card including the contact unit according to the present invention.
  • FIG. 7B is a rear view of the contact unit shown in FIG. 7A.
  • FIG. 7C is a cross-sectional view showing a part of FIG. 2 partially enlarged.
  • FIG. 8 is a front view schematically showing the external appearance of a second embodiment of the probe card including the contact unit according to the present invention.
  • FIG. 9 is a top view of the example shown in FIG. 10 is a partial cross-sectional view showing a part of the example shown in FIG. 9 in an enlarged manner.
  • FIG. 11 is a plan view showing a contact unit in a second embodiment of the probe card including the contact unit according to the present invention.
  • FIG. 12 is a side view of the example shown in FIG.
  • FIG. 13 is a rear view of the contact unit shown in FIG. FIG.
  • FIG. 14 is a front view of the example shown in FIG.
  • FIG. 15 is a plan view showing an external appearance of a silicon wafer inspected by the second embodiment of the probe card including the contact unit according to the present invention.
  • FIG. 16 is a configuration diagram schematically showing an enlarged part of a circuit pattern in the silicon wafer shown in FIG.
  • FIG. 17A is a partial cross-sectional view showing another example of the contact used in the contact unit.
  • FIG. 17B is a partial cross-sectional view showing another example of the contact used in the contact unit.
  • FIG. 17C is a partial cross-sectional view illustrating another example of the contact used in the contact unit.
  • FIG. 17D is a partial cross-sectional view illustrating another example of the contact used in the contact unit.
  • FIG. 17A is a partial cross-sectional view showing another example of the contact used in the contact unit.
  • FIG. 17B is a partial cross-sectional view showing another example of the contact used in the contact unit.
  • FIG. 17E is a partial cross-sectional view showing another example of the contact used in the contact unit.
  • FIG. 18 is a partial cross-sectional view showing the main part of a third embodiment of the probe card provided with the contact unit according to the present invention.
  • FIG. 19 is a plan view of a contact unit used in a third embodiment of the probe card including the contact unit according to the present invention.
  • FIG. 20 is a side view of the example shown in FIG.
  • FIG. 21 is a back view of the example shown in FIG.
  • FIG. 22 is a front view of the example shown in FIG.
  • FIG. 23 is a partial cross-sectional view showing a main part of a fourth embodiment of the probe card including the contact unit according to the present invention.
  • FIG. 24 is a plan view of a contact unit used in a fourth embodiment of the probe card including the contact unit according to the present invention.
  • FIG. 25 is a front view of the example shown in FIG.
  • FIG. 26 is a side view of the example shown in FIG.
  • FIG. 27 is a back view of the example shown in FIG.
  • FIG. 28 is a configuration diagram of a probe card used for explaining an example of a contact unit replacement method according to the present invention.
  • FIG. 29 is a diagram for explaining a repair nozzle used in an example of a contact unit replacement method according to the present invention.
  • FIG. 30 is an enlarged configuration diagram showing a part of the contact unit on the substrate shown in FIG.
  • FIG. 3 schematically shows a configuration of a test system including a test head in which each embodiment of the probe card including the contact unit according to the present invention is used.
  • the test system is used, for example, to perform a lighting inspection of a liquid crystal panel constituting a part of a liquid crystal display as an object to be inspected or a circuit operation inspection of a silicon wafer described later.
  • the liquid crystal panel WO as an object to be inspected is formed at the center portion thereof by superimposing the display portion DD composed of a polarizing filter, a color filter and the like on the display portion DD. And a connection terminal board DE that transmits and receives a drive signal and the like to the display unit DD.
  • the display unit DD an image or the like is displayed in the inner area DA.
  • a terminal group TA composed of a plurality of contact pads is formed at predetermined intervals on the entire periphery of the display portion DD in the connection terminal board DE.
  • the test system is supported by a prober 10 having a stage 16 on which a liquid crystal panel WO is detachably mounted, and a base 10B provided in parallel with the prober 10 via a joint 14, and is indicated by a two-dot chain line.
  • a storage head in which a plurality of liquid crystal panels WO to be tested or a plurality of tested liquid crystal panels WO are stored is stored.
  • a chamber 25 a chamber 25.
  • the stage 16 in the prober 10 is movably supported by a rotational drive system in a drive mechanism (not shown) and a translational drive system along the three axes of the orthogonal coordinate system. Thereby, the rotation angle and the three-dimensional coordinate position in the stage 16 are controlled by a control unit (not shown).
  • a plurality of pores communicating with suction means are formed in the inspection object mounting surface 16S of the stage 16.
  • suction means when the suction means is selectively activated, the liquid crystal panel WO as an object to be inspected has a predetermined group on the object mounting surface 16S with its terminal group TA facing the probe card 20 of the test head 12. It will be mounted and held in position.
  • the test head 12 is electrically connected to the controller 22 via the connection cable 18.
  • the controller 22 forms and supplies a test signal group DC for the test head 12.
  • the test pattern is displayed on the display portion DD of the liquid crystal panel WO.
  • the liquid crystal panel has missing dots, uneven color, etc.
  • a lighting test is performed for each liquid crystal panel WO. Thereby, the quality of each liquid crystal panel WO is determined.
  • the test head 12 when the test head 12 takes a position close to the stage 16, the test head 12 has the probe card 20 that is electrically connected to the terminal group TA of the liquid crystal panel WO. It has at the lower end.
  • the probe card 20 is detachably supported with respect to the end of the test head 12, and includes a mother board 34 having contact units 38L and 38S described later.
  • the motherboard 34 is formed into a thin plate shape using, for example, a thermosetting resin (BT resin: trade name), glass epoxy resin, glass, and ceramic.
  • BT resin trade name
  • An opening 34A for visual inspection is formed at the center of the mother board 34.
  • the dimension of the opening 34A is set to be equal to or larger than the size of the display part DD of the liquid crystal panel WO.
  • a plurality of contact units 38 ⁇ / b> L and 38 ⁇ / b> S are joined to the edge portion on one surface of the mother board 34 along one of the long side and the short side, respectively.
  • the rows of contact units 38L and 38S are joined in an L shape so as to cross each other.
  • the contact units 38L and 38S are arranged in a line at a predetermined interval.
  • the contact unit 38S Since the contact units 38L and 38S have the same structure, the contact unit 38S will be described, and the description of the contact unit 38L will be omitted.
  • solder balls 38bi 1 to n, n is a positive integer
  • the solder ball 38bi is made of, for example, a low melting point brazing material (Sn—Zn or Sn—Zn—Bi).
  • the solder balls 38bi are formed in three columns. Each row is formed substantially parallel to each other with a predetermined interval.
  • the external connection pins 36ai are arranged at predetermined intervals along the long side and the short side corresponding to the contact units 38L and 38S.
  • the external connection pin 36ai is connected to a connection socket of the test head 12 (not shown).
  • solder balls 38bi in each row are connected to one open end of the through electrode 38t through the conductor pattern 38w.
  • the through electrodes 38t are formed in a staggered pattern along the rows of solder balls 38bi.
  • a support 38ST (standoff) having a predetermined height is provided at each corner of the substrate.
  • the support 38ST formed of glass epoxy resin or thermosetting resin is bonded by, for example, a thermocompression sheet.
  • the mounting height of the contact units 38S and 38L (the height from the surface of the motherboard 34 to the surface of the substrate 38B) is varied during mounting. It is suppressed.
  • Markers 38MB are formed at four locations adjacent to the support 38ST.
  • the marker 38MB is used for positioning the contact units 38S and 38L with respect to a predetermined position on the mother board 34 by image recognition.
  • the other opening end of the through electrode 38t is open to the other surface of the mother board 34. As shown in FIG. 7A, the other opening end of each through electrode 38t is connected to one end of a conductor pattern 38PP formed on the surface thereof.
  • the conductor pattern 38PP is formed corresponding to a predetermined interval, for example, a mutual interval between the terminals constituting the terminal group TA of the liquid crystal panel WO described above.
  • a contact 38ai is brazed to the other end on each conductor pattern 38PP.
  • a relatively high melting point brazing material such as Au—Sn, Sn, Sn—Ag, or Sn—Ag—Cu is formed on the mounting portion of the contact 38ai on the substrate 38B by plating or screen printing.
  • a contact unit in which a plurality of contacts 38ai are mounted on a glass substrate is manufactured.
  • the contactor mounting accuracy and appearance inspection are performed in the state of the contactor unit 38S, and the defective contactor unit is repaired or discarded.
  • Sorting is very effective for improving yield.
  • the contact 38ai is formed by pressing with a thin metal material, has a contact piece at the tip and a slit inside, and a movable piece 38C. It is comprised from the fixed part 38F which continues to a base end part and is fixed to the board
  • markers 38MA are formed at three locations in the vicinity of the other end of the conductor pattern 38PP located at both ends and substantially in the center.
  • the marker 38MA is used for positioning and mounting the contact units 38S and 38L with respect to a predetermined position on the mother board 34 by image recognition.
  • the suction unit is activated in a state where the liquid crystal panel WO is positioned at a predetermined position on the inspection object mounting surface 16S of the stage 16, whereby FIG. As shown, the liquid crystal panel WO is held on the inspection object mounting surface 16S.
  • the probe card 20 of the test head 12 is brought close to the liquid crystal panel WO as shown by a solid line in FIG.
  • the contact portions of the movable piece portions 38C of the contact units 38S and 38L are brought into contact with the terminal groups TA on one long side and the short side of the liquid crystal panel WO.
  • the controller 22 supplies the test signal group DC to the test head 12, and a lighting test is performed. Thereby, the controller 22 determines pass / fail of each liquid crystal panel WO in the lighting inspection for each liquid crystal panel WO based on the obtained data group DQ.
  • the stage 16 is set at a predetermined angle set based on the control signal. It can be rotated.
  • the predetermined rotation angle is set to, for example, an angle until the contact units 38L and 38S face each other terminal group TA on the other long side and short side of the liquid crystal panel WO that has not been inspected.
  • the probe card 20 of the test head 12 is brought close to the liquid crystal panel WO as shown by a solid line in FIG.
  • the contact portions of the movable piece portions 38C of the contact units 38S and 38L are brought into contact with the terminal groups TA on the other long side and short side of the liquid crystal panel WO.
  • the controller 22 supplies the test signal group DC to the test head 12, and the lighting test is performed. Thereby, the controller 22 determines pass / fail of each liquid crystal panel WO in the lighting inspection for each liquid crystal panel WO based on the obtained data group DQ. Note that the second inspection described above may be omitted.
  • the probe card in the first embodiment described above is used for the liquid crystal panel WO as an object to be inspected, but the probe card 20 shown in FIGS. 8 and 9 is a silicon wafer as an object to be inspected. It shall be used for WA (see FIG. 15).
  • the probe card 20 is used in a state where it is mounted on the test head 12 in the test system as shown in FIGS. Is done.
  • FIG. 16 is an enlarged view of a portion A composed of six circuit patterns WAij in FIG.
  • circuit pattern A1, A2, A3, A4, A5, and A6 in part A have similar test signal input / output contact pad groups formed in two rows substantially parallel to each other at the center. Has been. Each test signal input / output contact pad group in the circuit patterns A1, A2, A3, A4, A5, and A6 abuts each contact of one contact unit in the probe card 20 described later during the test. Is done.
  • the mother board 24 is formed in a disc-like shape with a predetermined thickness using, for example, glass epoxy resin, the above-described thermosetting resin, ceramic, or glass.
  • the external connection pins 26ai are equally spaced at a predetermined angle along the circumferential direction to form a plurality of annular rows.
  • solder ball 28bi 1 to n, n is a positive integer
  • the solder balls 28bi are formed in six columns. Each row is formed substantially parallel to each other with a predetermined interval. Note that the soldering material of the solder balls 28bi has a lower melting point than the first brazing material described later, such as Sn—Zn and Sn—Zn—Bi.
  • the external connection pin 26ai is connected to a connection socket of the test head 12 (not shown).
  • each row of solder balls 28bi corresponding to each contact 28ai is connected to one open end of the through electrode 28t via a conductor pattern 28w.
  • the through electrodes 28t are formed in a staggered pattern along the rows of solder balls 28bi.
  • a support 28ST having a predetermined height is provided at each corner of the substrate 28B.
  • the material of the support 28ST is preferably a material with poor wettability of the brazing material. For example, there is a method of sandwiching or bonding a stainless material between the substrates 28B.
  • Markers 28MB are formed at four locations adjacent to the support 28ST. A marker 28MB is also formed at an intermediate position between the markers 28MB. The marker 28MB is used for positioning the contact unit 28ij with respect to a predetermined position on the mother board 24 by image recognition.
  • the other opening end of the through electrode 28t is opened on the other surface of the mother board 24 as shown in FIG.
  • the other open end of each through electrode 28t is connected to one end of a conductor pattern constituting each conductor pattern group 28B1, 28B2, 28B3, 28B4, 28B5, and 28B6 formed on the surface thereof.
  • Each conductor pattern is formed corresponding to a predetermined interval, for example, a contact pad mutual interval constituting the test signal input / output contact pad group of the silicon wafer WA described above.
  • a contact 28ai is fixed by soldering to the other end on each conductor pattern.
  • a brazing material is formed on the mounting portion of the contact 28ai on the substrate 28B by plating or screen printing.
  • the brazing material of the contact mounting part has a relatively high melting point such as Au—Sn, Sn, Sn—Ag, Sn—Ag—Cu so as not to be affected by heat when the contact unit is mounted.
  • a material (first brazing material) is preferably used.
  • a contact unit in which a plurality of contacts 28ai are mounted on a glass base material is manufactured.
  • mounting accuracy and appearance inspection of the contact are performed, and the defective contact unit is repaired or discarded.
  • Sorting is very effective for improving yield.
  • the contact 28ai is formed by press working with a thin metal material, and has a contact piece at the tip and a movable piece 28C having a slit inside, and a movable piece 28C. And a fixed portion 28F that is fixed to the substrate 28B.
  • the substrate 28B is positioned at both ends thereof, between the conductor pattern groups 28B1 and 28B2, between the conductor pattern groups 28B2 and 28B3, between the conductor pattern groups 28B4 and 28B5, and between the conductor pattern groups 28B5 and 28B6.
  • markers 28MA are formed at a total of eight locations. The marker 28MA is used for positioning the contact unit 28ij with respect to a predetermined position on the mother board 24 by image recognition.
  • the contact in the contact unit 28ij is not limited to such an example.
  • the sharp needle-shaped contact portion can be elastically displaced.
  • a pair of contacts 56ai having a shape similar to that having no slit in the contacts shown in FIG. 12 may be supported on the substrate 56B.
  • a contactor is not restricted to press work, For example, you may manufacture by an etching, MEMS, a wire cut etc.
  • the suction means is activated in a state where the silicon wafer WA is positioned at a predetermined position on the inspection object mounting surface 16S of the stage 16, The silicon wafer WA is held on the inspection object mounting surface 16S.
  • the probe card 20 of the test head 12 is brought close to the silicon wafer WA.
  • the contact portion of the contact 28ai of the contact unit 28ij is brought into contact with the contact pad group of the circuit pattern WAij of the silicon wafer WA.
  • the electrical characteristic inspection for one silicon wafer WA is performed, for example, in two rows, that is, every column having a predetermined interval, that is, in a thinned state.
  • the controller 22 supplies the test signal group DC to the test head 12, and the electrical characteristic inspection is performed. Thereby, the controller 22 determines the quality of the electrical characteristic inspection based on the obtained data group DQ.
  • FIG. 18 schematically shows a main part of a third embodiment of the probe card including the contact unit according to the present invention.
  • the external connection pin 26ai is directly connected to the contact unit 28ij through the conductor layer 30ai.
  • connection block member 32 formed of glass epoxy resin, ceramic or the like is positioned with respect to the mother boat 24 and fixed by a predetermined fastening member such as a screw.
  • plate spring may be sufficient.
  • the contact pads 58 cpi arranged at a mutual interval larger than the mutual interval between the contacts 28 ai are formed to be six columns. Each row is formed substantially parallel to each other with a predetermined interval.
  • each row of contact pads 58cpi corresponding to each contact 28ai is connected to one open end of the through electrode 58t through a conductor pattern 58w.
  • the through electrodes 58t are formed in a staggered pattern along the row of contact pads 58cpi.
  • the substrate 58B is bonded to the connection block member 32 with a predetermined ultraviolet curable adhesive, for example.
  • the ultraviolet curable adhesive is, for example, an adhesive (type A-1582) that can be peeled off by heating at 100 ° C. This adhesive can be peeled when the resin is melted by heating at 100 ° C. After peeling, the deposit is dissolved with an alcohol solvent.
  • the adhesive is not limited to such an example, and may be, for example, an adhesive that can be peeled off at 80 ° C. (model A-1579) or an adhesive that can be peeled off at 160 ° C. (type A-1611). May be.
  • each through electrode 58t is opened toward the other surface of the connection block member 32 as shown in FIG.
  • the other open end of each through electrode 58t is connected to one end of a conductor pattern constituting each conductor pattern group 58B1, 58B2, 58B3, 58B4, 58B5, and 58B6 formed on the surface thereof.
  • Each conductor pattern is formed corresponding to a predetermined interval, for example, a contact pad mutual interval constituting the test signal input / output contact pad group of the silicon wafer WA described above.
  • a contact 28ai is fixed by soldering to the other end on each conductor pattern.
  • the substrate 58B is positioned at both ends thereof, between the conductor pattern groups 58B1 and 58B2, between the conductor pattern groups 58B2 and 58B3, between the conductor pattern groups 58B4 and 58B5, and between the conductor pattern groups 58B5 and 58B6.
  • markers 58MA are formed in a total of eight locations. The marker 58MA is used for positioning the contact unit 58ij with respect to a predetermined position in the connection block member 32 by image recognition.
  • connection block member 32 By using the spring probe 34ai of the connection block member 32, for example, the same motherboard can be used by standardizing the position of the external connection terminal of the contact unit even for ICs having different pad arrangements, and the cost can be greatly reduced.
  • FIG. 23 schematically shows a main part of a fourth embodiment of a probe card provided with a contact unit according to the present invention.
  • the external connection pin 26ai is directly connected to the contact unit 28ij through the conductor layer 30ai.
  • the external connection pins 26ai are connected to the contact unit 68ij through the conductor layer 30ai, the FPC connector 68CN, and the flexible wiring board 68FC.
  • the contact unit 68ij is fixed on one surface of the substrate 68B and a substrate 68B bonded to one surface of the motherboard 24.
  • the substrate 68B formed of glass epoxy resin is bonded to the mother board 24 with a predetermined ultraviolet curable adhesive, for example.
  • the ultraviolet curable adhesive is, for example, an adhesive (type A-1582) that can be peeled off by heating at 100 ° C. This adhesive can be peeled when the resin is melted by heating at 100 ° C. After peeling, the deposit is dissolved with an alcohol solvent.
  • the adhesive is not limited to such an example, and may be, for example, an adhesive that can be peeled off at 80 ° C. (model A-1579) or an adhesive that can be peeled off at 160 ° C. (type A-1611). May be.
  • conductor pattern groups 68B1, 68B2, 68B3, 68B4, 68B5, and 68B6 are formed on one surface of the substrate 68B.
  • Each conductor pattern constituting the conductor pattern group is formed corresponding to a predetermined interval, for example, a mutual interval between contact pads constituting the test signal input / output contact pad group of the silicon wafer WA described above.
  • a contact 28ai is brazed to the other end side of each conductor pattern.
  • the substrate 68B is positioned at both ends thereof, between the conductor pattern groups 68B1 and 68B2, between the conductor pattern groups 68B2 and 68B3, between the conductor pattern groups 68B4 and 68B5, and between the conductor pattern groups 68B5 and 68B6.
  • markers 68M are formed in a total of eight locations.
  • the marker 68M is used for positioning the contact unit 68ij with respect to a predetermined position on the mother board 24 by image recognition.
  • a contact pad group 68FCP is formed at one end of the flexible wiring board 68FC.
  • the contact unit 68ij can be manufactured at low cost.
  • the contact unit 28ij in the probe card 20 can be replaced individually, first, as shown in FIG.
  • the contact unit 28ij that is joined to the connector and needs to be replaced is removed.
  • the repair nozzle 70 is put on the contact unit 28ij disposed at a predetermined position AR.
  • infrared rays or warm air is irradiated or blown from a light source (not shown) for a predetermined time.
  • a new contact unit 28ij is joined to a predetermined position AR on the mother board 24 via a solder ball.
  • the markers 24MA to 24MD on the mother board 24 and the marker 24MA of the contact unit 28ij are referred to, and the new contact unit 28ij is positioned at the predetermined position AR by the image recognition technique.
  • the same mounting method and apparatus as the conventional BGA type can be used.
  • a general rework device can be used for replacement and repair of the contact unit.
  • the second brazing material have a low melting point, it is possible to replace and repair the contact unit without affecting the mounting of the contact.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Measuring Leads Or Probes (AREA)

Abstract

Provided is a probe card (20) on which the substrates (38B) of contact units (38S and 38L) are bonded to a motherboard (34) by an adhesive that is detachable upon application of heat.

Description

接触子ユニットを備えるプローブカード、および、接触子ユニットの交換方法Probe card provided with contact unit and contact unit replacement method
　本発明は、接触子ユニットを備えるプローブカード、および、接触子ユニットの交換方法に関する。 The present invention relates to a probe card including a contact unit and a contact unit replacement method.
　シリコンウェハ等の半導体装置に縦横に複数個形成された回路および回路パターンの良否をそれぞれ判定するために電気的特性検査が行なわれている。このような検査においては、例えば、特許文献１にも示されるような、プローブカードを備える検査装置（テストシステム）が用いられている。 Electrical characteristic inspection is performed in order to determine whether a plurality of circuits and circuit patterns formed vertically and horizontally on a semiconductor device such as a silicon wafer are good or bad. In such an inspection, for example, an inspection apparatus (test system) including a probe card as shown in Patent Document 1 is used.
　プローブカードは、例えば、特許文献２にも示されるように、被検査物としてのシリコンウェハの各回路パターンに電気的に接続される複数のスプリングプローブを有するプローブヘッドと、プローブヘッドを挟持する二つの締結部材とを含んで構成されている。 For example, as shown in Patent Document 2, the probe card includes a probe head having a plurality of spring probes that are electrically connected to each circuit pattern of a silicon wafer as an object to be inspected, and a probe card that sandwiches the probe head. And two fastening members.
　二つの締結部材は、スティフナーおよびプローブボードを介して向かい合って配されている。 The two fastening members are arranged facing each other via a stiffener and a probe board.
　また、そのようなプローブヘッドは、複数のスプリングプローブを協働して保持するように共通の軸線上に貫通穴をそれぞれ、有し、互いに重ねあわされるボトムボード、中間ボード、および、トップボードを含んで構成されている。これにより、不良とされるスプリングプローブが交換される場合、ボトムボードを下側にして、トップボードが取り外されることにより、そのスプリングプローブが貫通穴から引き抜かれ、交換されることとなる。 In addition, such a probe head includes a bottom board, an intermediate board, and a top board that each have a through hole on a common axis so as to hold a plurality of spring probes in cooperation, and are overlapped with each other. It is configured to include. As a result, when a spring probe deemed defective is replaced, the spring probe is pulled out of the through hole and replaced by removing the top board with the bottom board facing down.
特開２００４－１７２５５１号公報JP 2004-172551 A 特開２００７－７１６９９号公報JP 2007-71699 A
　上述のようなプローブカードのプローブヘッドにおいては、試験されるシリコンウェハの直径が大きくなるに従い、プローブヘッドの直径も大となる。これにより、プローブヘッドにおいて、不良とされる１本のスプリングプローブの交換の際、上述のような複数のボードからなるプローブヘッドの分解および再組み立て作業が容易ではなく、しかも、他の良品とされる複数本のスプリングプローブが誤って破損する虞もある。即ち、プローブカードの製造工程における歩留や破損接触子の補修等が問題となる。 In the probe head of the probe card as described above, the diameter of the probe head increases as the diameter of the silicon wafer to be tested increases. This makes it difficult to disassemble and reassemble the probe head composed of a plurality of boards as described above when replacing one spring probe, which is regarded as defective in the probe head. A plurality of spring probes may be accidentally damaged. In other words, yield and repair of damaged contacts in the probe card manufacturing process are problematic.
　以上の問題点を考慮し、本発明は、接触子ユニットを備えるプローブカード、および、接触子ユニットの交換方法であって、接触子ユニットを個別に容易に交換することができる接触子ユニットを備えるプローブカード、および、接触子ユニットの交換方法を提供することを目的とする。 In view of the above problems, the present invention is a probe card including a contact unit, and a contact unit replacement method, which includes a contact unit that can be easily replaced individually. It is an object of the present invention to provide a probe card and a method for replacing a contact unit.
　上述の目的を達成するために、本発明に係る接触子ユニットを備えるプローブカードは、被検査物における入出力信号用端子群に当接または離隔せしめられる複数の接触子と、複数の接触子を所定の個数ごとに一方の表面に支持する基板と、基板における相対向する他方の表面に形成され複数の接触子に電気的に接続される導体層と、をそれぞれ、含んでなる複数の接触子ユニットと、外部接続端子と、複数の接触子ユニットと外部接続端子とを電気的に接続する導体層とを有し、複数の接触子ユニットを支持するマザーボードと、を備え、複数の接触子ユニットが、加熱剥離可能な接着剤またはろう材により、マザーボードの表面に直接的または間接的に取り外し可能に接合されることを特徴とする。 In order to achieve the above-described object, a probe card including a contact unit according to the present invention includes a plurality of contacts that are in contact with or separated from an input / output signal terminal group in an object to be inspected, and a plurality of contacts. A plurality of contacts each including a substrate supported on one surface for each predetermined number and a conductor layer formed on the opposite surface of the substrate and electrically connected to the plurality of contacts. A plurality of contact units, comprising a unit, an external connection terminal, and a mother board that has a conductor layer that electrically connects the plurality of contact unit and the external connection terminal, and supports the plurality of contact units. Is removably bonded directly or indirectly to the surface of the motherboard with a heat-peelable adhesive or brazing material.
　本発明に係る接触子ユニットの交換方法は、上述のマザーボードの所定位置に取り外し可能に接合された複数の接触子ユニットのうちの１個の接触子ユニットを、赤外線または加熱空気が供給されるリペアノズルの内側に所定時間、配し、所定時間経過後、１個の接触子ユニットをリペアノズルの内側から取り外し、新たな接触子ユニットを接合材によりマザーボードの所定位置に接合することを含む。 According to the contact unit replacement method of the present invention, one contact unit among a plurality of contact units detachably joined to a predetermined position of the mother board described above is repaired with infrared or heated air. It is arranged inside the nozzle for a predetermined time, and after the predetermined time has elapsed, one contact unit is removed from the inside of the repair nozzle, and a new contact unit is bonded to a predetermined position on the motherboard with a bonding material.
　以上の説明から明らかなように、本発明に係る接触子ユニットを備えるプローブカード、および、接触子ユニットの交換方法によれば、複数の接触子ユニットが、加熱剥離可能な接着剤、または、ろう材により、マザーボードの表面に直接的または間接的に取り外し可能に接合されるので接触子ユニットを個別に容易に交換することができる。 As is clear from the above description, according to the probe card including the contact unit and the contact unit replacement method according to the present invention, the plurality of contact units can be adhesively peeled by heat or wax. Since the material is removably bonded directly or indirectly to the surface of the mother board, the contact unit can be easily replaced individually.
図１は、本発明に係る接触子ユニットを備えるプローブカードの第１実施例の外観を概略的に示す正面図である。FIG. 1 is a front view schematically showing an external appearance of a first embodiment of a probe card having a contact unit according to the present invention. 図２は、図１に示される例における上面図である。FIG. 2 is a top view of the example shown in FIG. 図３は、本発明に係る接触子ユニットを備えるプローブカードの各実施例が用いられるテストヘッドを備えるテストシステムの構成を概略的に示す。FIG. 3 schematically shows a configuration of a test system including a test head in which each embodiment of the probe card including the contact unit according to the present invention is used. 図４は、図３に示される例における平面図である。FIG. 4 is a plan view of the example shown in FIG. 図５は、本発明に係る接触子ユニットを備えるプローブカードの第１実施例により検査される液晶パネルの平面図である。FIG. 5 is a plan view of the liquid crystal panel inspected by the first embodiment of the probe card including the contact unit according to the present invention. 図６は、図５に示される液晶パネルの正面図である。FIG. 6 is a front view of the liquid crystal panel shown in FIG. 図７Ａは、本発明に係る接触子ユニットを備えるプローブカードの第１実施例に用いられる接触子ユニットを示す平面図である。FIG. 7A is a plan view showing the contact unit used in the first embodiment of the probe card including the contact unit according to the present invention. 図７Ｂは、図７Ａに示される接触子ユニットの裏面図である。FIG. 7B is a rear view of the contact unit shown in FIG. 7A. 図７Ｃは、図２の一部を部分的に拡大して示す断面図である。FIG. 7C is a cross-sectional view showing a part of FIG. 2 partially enlarged. 図８は、本発明に係る接触子ユニットを備えるプローブカードの第２実施例の外観を概略的に示す正面図である。FIG. 8 is a front view schematically showing the external appearance of a second embodiment of the probe card including the contact unit according to the present invention. 図９は、図８に示される例における上面図である。FIG. 9 is a top view of the example shown in FIG. 図１０は、図９に示される例における一部を拡大して示す部分断面図である。10 is a partial cross-sectional view showing a part of the example shown in FIG. 9 in an enlarged manner. 図１１は、本発明に係る接触子ユニットを備えるプローブカードの第２実施例における接触子ユニットを示す平面図である。FIG. 11 is a plan view showing a contact unit in a second embodiment of the probe card including the contact unit according to the present invention. 図１２は、図１１に示される例における側面図である。FIG. 12 is a side view of the example shown in FIG. 図１３は、図１１に示される接触子ユニットの裏面図である。FIG. 13 is a rear view of the contact unit shown in FIG. 図１４は、図１３に示される例の正面図である。FIG. 14 is a front view of the example shown in FIG. 図１５は、本発明に係る接触子ユニットを備えるプローブカードの第２実施例により検査されるシリコンウェハの外観を示す平面図である。FIG. 15 is a plan view showing an external appearance of a silicon wafer inspected by the second embodiment of the probe card including the contact unit according to the present invention. 図１６は、図１５に示されるシリコンウェハにおける回路パターンの一部を拡大して模式的に示す構成図である。FIG. 16 is a configuration diagram schematically showing an enlarged part of a circuit pattern in the silicon wafer shown in FIG. 図１７Ａは、接触子ユニットに用いられる接触子の他の一例を示す部分断面図である。FIG. 17A is a partial cross-sectional view showing another example of the contact used in the contact unit. 図１７Ｂは、接触子ユニットに用いられる接触子の他の一例を示す部分断面図である。FIG. 17B is a partial cross-sectional view showing another example of the contact used in the contact unit. 図１７Ｃは、接触子ユニットに用いられる接触子の他の一例を示す部分断面図である。FIG. 17C is a partial cross-sectional view illustrating another example of the contact used in the contact unit. 図１７Ｄは、接触子ユニットに用いられる接触子の他の一例を示す部分断面図である。FIG. 17D is a partial cross-sectional view illustrating another example of the contact used in the contact unit. 図１７Ｅは、接触子ユニットに用いられる接触子の他の一例を示す部分断面図である。FIG. 17E is a partial cross-sectional view showing another example of the contact used in the contact unit. 図１８は、本発明に係る接触子ユニットを備えるプローブカードの第３実施例の要部を示す部分断面図である。FIG. 18 is a partial cross-sectional view showing the main part of a third embodiment of the probe card provided with the contact unit according to the present invention. 図１９は、本発明に係る接触子ユニットを備えるプローブカードの第３実施例に用いられる接触子ユニットの平面図である。FIG. 19 is a plan view of a contact unit used in a third embodiment of the probe card including the contact unit according to the present invention. 図２０は、図１９に示される例における側面図である。FIG. 20 is a side view of the example shown in FIG. 図２１は、図１９に示される例における裏面図である。FIG. 21 is a back view of the example shown in FIG. 図２２は、図２１に示される例における正面図である。FIG. 22 is a front view of the example shown in FIG. 図２３は、本発明に係る接触子ユニットを備えるプローブカードの第４実施例の要部を示す部分断面図である。FIG. 23 is a partial cross-sectional view showing a main part of a fourth embodiment of the probe card including the contact unit according to the present invention. 図２４は、本発明に係る接触子ユニットを備えるプローブカードの第４実施例に用いられる接触子ユニットの平面図である。FIG. 24 is a plan view of a contact unit used in a fourth embodiment of the probe card including the contact unit according to the present invention. 図２５は、図２４に示される例における正面図である。FIG. 25 is a front view of the example shown in FIG. 図２６は、図２４に示される例における側面図である。FIG. 26 is a side view of the example shown in FIG. 図２７は、図２４に示される例における裏面図である。FIG. 27 is a back view of the example shown in FIG. 図２８は、本発明に係る接触子ユニットの交換方法の一例の説明に供されるプローブカードの構成図である。FIG. 28 is a configuration diagram of a probe card used for explaining an example of a contact unit replacement method according to the present invention. 図２９は、本発明に係る接触子ユニットの交換方法の一例に用いられるリペアノズルの説明に供される図である。FIG. 29 is a diagram for explaining a repair nozzle used in an example of a contact unit replacement method according to the present invention. 図３０は、図２８に示される基板上の接触子ユニットの一部を拡大して示す構成図である。FIG. 30 is an enlarged configuration diagram showing a part of the contact unit on the substrate shown in FIG.
　図３は、本発明に係る接触子ユニットを備えるプローブカードの各実施例が用いられるテストヘッドを備えるテストシステムの構成を概略的に示す。 FIG. 3 schematically shows a configuration of a test system including a test head in which each embodiment of the probe card including the contact unit according to the present invention is used.
　図３において、テストシステムは、例えば、被検査物としての液晶ディスプレイの一部を構成する液晶パネルの点灯検査、または、後述するシリコンウェハの回路動作検査を行うために使用される。 In FIG. 3, the test system is used, for example, to perform a lighting inspection of a liquid crystal panel constituting a part of a liquid crystal display as an object to be inspected or a circuit operation inspection of a silicon wafer described later.
　被検査物としての液晶パネルＷＯは、図５および図６に示されるように、その中央部に、偏光フィルタおよびカラーフィルター等から構成される表示部ＤＤと、表示部ＤＤに重ねられて形成され、表示部ＤＤへの駆動信号等の授受を行う接続端子板ＤＥとを含んで構成される。表示部ＤＤにおいては、その内側の領域ＤＡに画像等が表示される。接続端子板ＤＥにおける表示部ＤＤの全周縁には、複数のコンタクトパッドからなる端子群ＴＡが所定の間隔で形成されている。 As shown in FIG. 5 and FIG. 6, the liquid crystal panel WO as an object to be inspected is formed at the center portion thereof by superimposing the display portion DD composed of a polarizing filter, a color filter and the like on the display portion DD. And a connection terminal board DE that transmits and receives a drive signal and the like to the display unit DD. In the display unit DD, an image or the like is displayed in the inner area DA. A terminal group TA composed of a plurality of contact pads is formed at predetermined intervals on the entire periphery of the display portion DD in the connection terminal board DE.
　テストシステムは、液晶パネルＷＯが着脱可能に搭載されるステージ１６を有するプローバ１０と、プローバ１０と並設される基台１０Ｂにジョイント１４を介して回動可能に支持され、ニ点鎖線で示されるように、ステージ１６に対し近接または離隔可能とされるテストヘッド１２と、図４に示されるように、試験される複数の液晶パネルＷＯまたは試験済みの複数の液晶パネルＷＯが貯蔵される貯蔵室２５とを含んで構成されている。 The test system is supported by a prober 10 having a stage 16 on which a liquid crystal panel WO is detachably mounted, and a base 10B provided in parallel with the prober 10 via a joint 14, and is indicated by a two-dot chain line. As shown in FIG. 4, a storage head in which a plurality of liquid crystal panels WO to be tested or a plurality of tested liquid crystal panels WO are stored is stored. And a chamber 25.
　プローバ１０におけるステージ１６は、図示が省略される駆動機構における回転駆動系、および、直交座標系３軸に沿った並進駆動系により、移動可能に支持されている。これにより、ステージ１６における回転角および三次元座標位置が、図示が省略される制御部により制御される。 The stage 16 in the prober 10 is movably supported by a rotational drive system in a drive mechanism (not shown) and a translational drive system along the three axes of the orthogonal coordinate system. Thereby, the rotation angle and the three-dimensional coordinate position in the stage 16 are controlled by a control unit (not shown).
　また、ステージ１６における被検査物搭載面１６Ｓには、図示が省略される吸引手段に連通する複数の細孔が形成されている。これにより、その吸引手段が選択的に作動状態とされる場合、被検査物としての液晶パネルＷＯは、その端子群ＴＡをテストヘッド１２のプローブカード２０に向けて被検査物搭載面１６Ｓにおける所定位置に搭載され保持されることとなる。 Also, a plurality of pores communicating with suction means (not shown) are formed in the inspection object mounting surface 16S of the stage 16. As a result, when the suction means is selectively activated, the liquid crystal panel WO as an object to be inspected has a predetermined group on the object mounting surface 16S with its terminal group TA facing the probe card 20 of the test head 12. It will be mounted and held in position.
　テストヘッド１２は、接続ケーブル１８を介して電気的にコントローラ２２に接続されている。コントローラ２２は、テストヘッド１２に対する試験信号群ＤＣを形成し供給する。これにより、液晶パネルＷＯの表示部ＤＤにテストパターンが表示される。その際、液晶パネルＷＯの目視による検査、または、コントローラ２２に制御されるＣＣＤカメラ（不図示）等による画像認識技術に基づく検査、もしくは、双方の検査により、液晶パネルのドット抜け、色むら等について各液晶パネルＷＯごとに対する点灯検査が行われる。これにより、各液晶パネルＷＯの良否が判定される。 The test head 12 is electrically connected to the controller 22 via the connection cable 18. The controller 22 forms and supplies a test signal group DC for the test head 12. Thereby, the test pattern is displayed on the display portion DD of the liquid crystal panel WO. At that time, by a visual inspection of the liquid crystal panel WO, an inspection based on an image recognition technique using a CCD camera (not shown) or the like controlled by the controller 22, or both inspections, the liquid crystal panel has missing dots, uneven color, etc. A lighting test is performed for each liquid crystal panel WO. Thereby, the quality of each liquid crystal panel WO is determined.
　テストヘッド１２は、図１および図２に示されるように、テストヘッド１２がステージ１６に対して近接した位置をとるとき、液晶パネルＷＯの端子群ＴＡと電気的接続を行う
プローブカード２０を最下端部に有している。 As shown in FIGS. 1 and 2, when the test head 12 takes a position close to the stage 16, the test head 12 has the probe card 20 that is electrically connected to the terminal group TA of the liquid crystal panel WO. It has at the lower end.
　プローブカード２０は、テストヘッド１２の端部に対し着脱可能に支持され、後述する接触子ユニット３８Ｌおよび３８Ｓを有するマザーボード３４を備えている。 The probe card 20 is detachably supported with respect to the end of the test head 12, and includes a mother board 34 having contact units 38L and 38S described later.
　マザーボード３４は、例えば、熱硬化性樹脂（ＢＴレジン：商標名）、ガラスエポキシ樹脂、ガラス、および、セラミックで薄板状に成形されている。マザーボード３４における中央部には、目視検査用の開口部３４Ａが形成されている。開口部３４Ａの寸法は、液晶パネルＷＯの表示部ＤＤの大きさ以上に設定されている。 The motherboard 34 is formed into a thin plate shape using, for example, a thermosetting resin (BT resin: trade name), glass epoxy resin, glass, and ceramic. An opening 34A for visual inspection is formed at the center of the mother board 34. The dimension of the opening 34A is set to be equal to or larger than the size of the display part DD of the liquid crystal panel WO.
　マザーボード３４の一方の表面における縁部には、図１に示されるように、長辺および短辺のうちの一方に沿ってそれぞれ、複数の接触子ユニット３８Ｌおよび３８Ｓが接合されている。接触子ユニット３８Ｌおよび３８Ｓの列は、互いに交差するようにＬ字状に接合されている。接触子ユニット３８Ｌおよび３８Ｓは、それぞれ、所定の間隔で一列に配されている。 As shown in FIG. 1, a plurality of contact units 38 </ b> L and 38 </ b> S are joined to the edge portion on one surface of the mother board 34 along one of the long side and the short side, respectively. The rows of contact units 38L and 38S are joined in an L shape so as to cross each other. The contact units 38L and 38S are arranged in a line at a predetermined interval.
　接触子ユニット３８Ｌおよび３８Ｓは、互いに同一の構造を有するので接触子ユニット３８Ｓについて説明し、接触子ユニット３８Ｌの説明を省略する。 Since the contact units 38L and 38S have the same structure, the contact unit 38S will be described, and the description of the contact unit 38L will be omitted.
　接触子ユニット３８Ｓは、図７Ａおよび図７Ｂに拡大されて示されるように、マザーボード３４の一方の表面に接着される基板３８Ｂと、基板３８Ｂの一方の表面上に半田付け固定される接触子３８ａｉ（ｉ＝１～ｎ，ｎは正の整数）とを含んで構成されている。 As shown in enlarged views in FIGS. 7A and 7B, the contact unit 38S includes a board 38B bonded to one surface of the motherboard 34, and a contact 38ai soldered and fixed on one surface of the board 38B. (I = 1 to n, n is a positive integer).
　ガラスエポキシ樹脂、または、上述の熱硬化性樹脂で成形される基板３８Ｂにおけるマザーボード３４の一方の表面に接着される表面には、図７Ｂに拡大されて示されるように、各接触子３８ａｉに対応して半田ボール３８ｂｉ（ｉ＝１～ｎ，ｎは正の整数）が形成されている。半田ボール３８ｂｉは、例えば、低融点のろう材（Ｓｎ－Ｚｎ，または、Ｓｎ－Ｚｎ－Ｂｉ）で作られている。半田ボール３８ｂｉは、３つの縦列となるように形成されている。各列は、所定の間隔をもって互いに略平行に形成されている。 The surface bonded to one surface of the mother board 34 in the substrate 38B formed of glass epoxy resin or the above-described thermosetting resin corresponds to each contact 38ai as shown in an enlarged view in FIG. 7B. Thus, solder balls 38bi (i = 1 to n, n is a positive integer) are formed. The solder ball 38bi is made of, for example, a low melting point brazing material (Sn—Zn or Sn—Zn—Bi). The solder balls 38bi are formed in three columns. Each row is formed substantially parallel to each other with a predetermined interval.
　各列の半田ボール３８ｂｉは、マザーボード３４の内部に形成される導体層を介して外部接続ピン３６ａｉ（ｉ＝１～ｎ，ｎは正の整数）に電気的に接続されている。外部接続ピン３６ａｉは、図１に示されるように、各接触子ユニット３８Ｌおよび３８Ｓに対応して長辺および短辺に沿って所定の間隔で配置されている。外部接続ピン３６ａｉは、図示が省略されるテストヘッド１２の接続用ソケットに接続される。 The solder balls 38bi in each row are electrically connected to the external connection pins 36ai (i = 1 to n, n is a positive integer) through a conductor layer formed inside the mother board 34. As shown in FIG. 1, the external connection pins 36ai are arranged at predetermined intervals along the long side and the short side corresponding to the contact units 38L and 38S. The external connection pin 36ai is connected to a connection socket of the test head 12 (not shown).
　また、各列の半田ボール３８ｂｉは、導体パターン３８ｗを介して貫通電極３８ｔの一方の開口端に接続されている。貫通電極３８ｔは、半田ボール３８ｂｉの列に沿って千鳥掛け状に形成されている。 The solder balls 38bi in each row are connected to one open end of the through electrode 38t through the conductor pattern 38w. The through electrodes 38t are formed in a staggered pattern along the rows of solder balls 38bi.
　さらに、基板の各角には、それぞれ、所定の高さを有する支持体３８ＳＴ（スタンドオフ）が設けられている。ガラスエポキシ樹脂または熱硬化性樹脂で成形される支持体３８ＳＴは、例えば、熱圧着シートにより接着されている。 Furthermore, a support 38ST (standoff) having a predetermined height is provided at each corner of the substrate. The support 38ST formed of glass epoxy resin or thermosetting resin is bonded by, for example, a thermocompression sheet.
　支持体３８ＳＴにより、半田ボール３８ｂｉの直径がばらついた場合であっても、実装時、接触子ユニット３８Ｓおよび３８Ｌの実装高さ（マザーボード３４の表面から基板３８Ｂの表面までの高さ）のばらつきが抑制される。 Even when the diameter of the solder ball 38bi varies due to the support 38ST, the mounting height of the contact units 38S and 38L (the height from the surface of the motherboard 34 to the surface of the substrate 38B) is varied during mounting. It is suppressed.
　支持体３８ＳＴに隣接した４箇所には、マーカ３８ＭＢが形成されている。なお、マーカ３８ＭＢは、画像認識による接触子ユニット３８Ｓおよび３８Ｌのマザーボード３４における所定位置に対する位置決めを行うために使用される。 Markers 38MB are formed at four locations adjacent to the support 38ST. The marker 38MB is used for positioning the contact units 38S and 38L with respect to a predetermined position on the mother board 34 by image recognition.
　貫通電極３８ｔの他方の開口端は、マザーボード３４の他方の表面に開口している。各貫通電極３８ｔの他方の開口端は、図７Ａに示されるように、その表面に形成される導体パターン３８ＰＰの一端に接続されている。導体パターン３８ＰＰは、所定の間隔、例えば、上述の液晶パネルＷＯの端子群ＴＡを構成する端子相互間隔に対応して形成されている。各導体パターン３８ＰＰ上の他端側には、接触子３８ａｉがろう付けされている。 The other opening end of the through electrode 38t is open to the other surface of the mother board 34. As shown in FIG. 7A, the other opening end of each through electrode 38t is connected to one end of a conductor pattern 38PP formed on the surface thereof. The conductor pattern 38PP is formed corresponding to a predetermined interval, for example, a mutual interval between the terminals constituting the terminal group TA of the liquid crystal panel WO described above. A contact 38ai is brazed to the other end on each conductor pattern 38PP.
　基板３８Ｂにおける接触子３８ａｉの実装部分には、Ａｕ－Ｓｎ，Ｓｎ，Ｓｎ－Ａｇ，Ｓｎ－Ａｇ－Ｃｕ等の比較的高融点のろう材が、めっき法やスクリーン印刷などにより形成されている。 A relatively high melting point brazing material such as Au—Sn, Sn, Sn—Ag, or Sn—Ag—Cu is formed on the mounting portion of the contact 38ai on the substrate 38B by plating or screen printing.
　これにより、基板３８Ｂが局所加熱されることにより、例えば、ガラス基材上に複数の接触子３８ａｉが実装された接触子ユニットが製造される。接触子ユニット３８Ｓの状態で、接触子の実装精度や外観検査が行われ、不具合の接触子ユニットは、手直し又は廃棄される。その結果、実装密度が微小になるにつれ、例えば、局所加熱時の隣接する接触子への影響やろう材の不足による倒れなど、歩留低下につながる要因が多くなるので、接触子ユニット３８Ｓでの選別は、歩留まりの向上にとって非常に有効となる。 Thus, by locally heating the substrate 38B, for example, a contact unit in which a plurality of contacts 38ai are mounted on a glass substrate is manufactured. The contactor mounting accuracy and appearance inspection are performed in the state of the contactor unit 38S, and the defective contactor unit is repaired or discarded. As a result, as the mounting density becomes smaller, for example, there are many factors that lead to a decrease in yield, such as an influence on adjacent contacts during local heating and a fall due to a lack of brazing material. Sorting is very effective for improving yield.
　接触子３８ａｉは、図７Ｃに拡大されて示されるように、薄板金属材料でプレス加工により成形され、先端部に接点部を有するとともに内部にスリットを有する可動片部３８Ｃと、可動片部３８Ｃの基端部に連なり基板３８Ｂに固定される固定部３８Ｆとから構成される。 As shown in an enlarged view in FIG. 7C, the contact 38ai is formed by pressing with a thin metal material, has a contact piece at the tip and a slit inside, and a movable piece 38C. It is comprised from the fixed part 38F which continues to a base end part and is fixed to the board | substrate 38B.
　図７Ａにおいて、両端および略中央に位置する導体パターン３８ＰＰの他端近傍には、マーカ３８ＭＡが３箇所に形成されている。なお、マーカ３８ＭＡは、画像認識による接触子ユニット３８Ｓおよび３８Ｌのマザーボード３４における所定位置に対する位置決めおよび実装を行うために使用される。 7A, markers 38MA are formed at three locations in the vicinity of the other end of the conductor pattern 38PP located at both ends and substantially in the center. The marker 38MA is used for positioning and mounting the contact units 38S and 38L with respect to a predetermined position on the mother board 34 by image recognition.
　斯かる構成において、液晶パネルＷＯの点灯検査にあたり、先ず、液晶パネルＷＯがステージ１６の被検査物搭載面１６Ｓにおける所定位置に位置決めされた状態で吸引手段が作動状態とされることにより、図４に示されるように、液晶パネルＷＯが被検査物搭載面１６Ｓに保持される。 In such a configuration, in the lighting inspection of the liquid crystal panel WO, first, the suction unit is activated in a state where the liquid crystal panel WO is positioned at a predetermined position on the inspection object mounting surface 16S of the stage 16, whereby FIG. As shown, the liquid crystal panel WO is held on the inspection object mounting surface 16S.
　次に、テストヘッド１２のプローブカード２０が、図３に実線で示されるように、液晶パネルＷＯに対し近接せしめられる。その際、接触子ユニット３８Ｓおよび３８Ｌの可動片部３８Ｃの接点部が、液晶パネルＷＯにおける一方の長辺および短辺の各端子群ＴＡに当接せしめられる。 Next, the probe card 20 of the test head 12 is brought close to the liquid crystal panel WO as shown by a solid line in FIG. At that time, the contact portions of the movable piece portions 38C of the contact units 38S and 38L are brought into contact with the terminal groups TA on one long side and the short side of the liquid crystal panel WO.
　続いて、コントローラ２２が試験信号群ＤＣをテストヘッド１２に供給し、点灯検査が行われる。これにより、コントローラ２２は、得られたデータ群ＤＱに基づいて各液晶パネルＷＯごとに対する点灯検査において各液晶パネルＷＯの良否を判定する。 Subsequently, the controller 22 supplies the test signal group DC to the test head 12, and a lighting test is performed. Thereby, the controller 22 determines pass / fail of each liquid crystal panel WO in the lighting inspection for each liquid crystal panel WO based on the obtained data group DQ.
　続いて、テストヘッド１２のプローブカード２０が、図３に一点鎖線で示されるように、液晶パネルＷＯに対し離隔せしめられた状態で、ステージ１６が、制御信号に基づいて設定された所定角度だけ回転せしめられる。所定の回転角度は、例えば、検査されていない液晶パネルＷＯにおける他方の長辺および短辺の各端子群ＴＡに、接触子ユニット３８Ｌおよび３８Ｓがそれぞれ、向かい合うまでの角度に設定される。 Subsequently, in a state where the probe card 20 of the test head 12 is separated from the liquid crystal panel WO as shown by a one-dot chain line in FIG. 3, the stage 16 is set at a predetermined angle set based on the control signal. It can be rotated. The predetermined rotation angle is set to, for example, an angle until the contact units 38L and 38S face each other terminal group TA on the other long side and short side of the liquid crystal panel WO that has not been inspected.
　そして、テストヘッド１２のプローブカード２０が、図３に実線で示されるように、液晶パネルＷＯに対し近接せしめられる。その際、接触子ユニット３８Ｓおよび３８Ｌの可動片部３８Ｃの接点部が、液晶パネルＷＯにおける他方の長辺および短辺の各端子群ＴＡに当接せしめられる。 Then, the probe card 20 of the test head 12 is brought close to the liquid crystal panel WO as shown by a solid line in FIG. At that time, the contact portions of the movable piece portions 38C of the contact units 38S and 38L are brought into contact with the terminal groups TA on the other long side and short side of the liquid crystal panel WO.
　これ以降、上述と同様に、コントローラ２２は、試験信号群ＤＣをテストヘッド１２に供給し、点灯検査が行われる。これにより、コントローラ２２は、得られたデータ群ＤＱに基づいて各液晶パネルＷＯごとに対する点灯検査において各液晶パネルＷＯの良否を判定する。なお、上述の２回目の検査は、省略されてもよい。 Thereafter, similarly to the above, the controller 22 supplies the test signal group DC to the test head 12, and the lighting test is performed. Thereby, the controller 22 determines pass / fail of each liquid crystal panel WO in the lighting inspection for each liquid crystal panel WO based on the obtained data group DQ. Note that the second inspection described above may be omitted.
　図８および図９は、本発明に係る接触子ユニットを備えるプローブカードの第２実施例の外観を概略的に示す。 8 and 9 schematically show the external appearance of a second embodiment of the probe card provided with the contact unit according to the present invention.
　上述の第１実施例におけるプローブカードは、被検査物としての液晶パネルＷＯに対して使用するものとされるが、図８および図９に示されるプローブカード２０は、被検査物としてのシリコンウェハＷＡ（図１５参照）に対して使用するものとされる。なお、図８および図９に示される例および後述される他の一例においても、プローブカード２０は、図３および図４に示されるような、テストシステムにおいてテストヘッド１２に装着された状態で使用される。 The probe card in the first embodiment described above is used for the liquid crystal panel WO as an object to be inspected, but the probe card 20 shown in FIGS. 8 and 9 is a silicon wafer as an object to be inspected. It shall be used for WA (see FIG. 15). In the example shown in FIGS. 8 and 9 and another example described later, the probe card 20 is used in a state where it is mounted on the test head 12 in the test system as shown in FIGS. Is done.
　被検査物としてのシリコンウェハＷＡは、図１５に示されるように、所定の直径を有しており、その表層部に、縦横に回路パターンＷＡｉｊ（ｉ＝１～ｎ，ｊ＝１～ｎ，ｎは正の整数）を有している。図１６は、図１５における６個の回路パターンＷＡｉｊからなるＡ部を拡大し代表して部分的に示す。 As shown in FIG. 15, a silicon wafer WA as an object to be inspected has a predetermined diameter, and on its surface layer portion, circuit patterns WAij (i = 1 to n, j = 1 to n, n is a positive integer). FIG. 16 is an enlarged view of a portion A composed of six circuit patterns WAij in FIG.
　図１６において、Ａ部における回路パターンＡ１，Ａ２，Ａ３，Ａ４，Ａ５、および、Ａ６には、それぞれ、同様な試験信号入出力用コンタクトパッド群が、その中央部に互いに略平行に二列形成されている。回路パターンＡ１，Ａ２，Ａ３，Ａ４，Ａ５、および、Ａ６における各試験信号入出力用コンタクトパッド群には、試験のとき、後述するプローブカード２０における１つの接触子ユニットの各接触子が当接される。 In FIG. 16, circuit pattern A1, A2, A3, A4, A5, and A6 in part A have similar test signal input / output contact pad groups formed in two rows substantially parallel to each other at the center. Has been. Each test signal input / output contact pad group in the circuit patterns A1, A2, A3, A4, A5, and A6 abuts each contact of one contact unit in the probe card 20 described later during the test. Is done.
　プローブカード２０は、図９に拡大されて示されるように、マザーボード２４と、マザーボード２４の一方の表面の周縁部に突出する複数の外部接続ピン２６ａｉと、マザーボード２４の他方の表面における中央部分に縦横に接着される複数の接触子ユニット２８ｉｊ（ｉ＝１～ｎ，ｊ＝１～ｎ，ｎは正の整数）とを含んで構成されている。 As shown in an enlarged view in FIG. 9, the probe card 20 includes a mother board 24, a plurality of external connection pins 26 ai projecting on the peripheral edge of one surface of the mother board 24, and a central portion on the other surface of the mother board 24. And a plurality of contact units 28ij (i = 1 to n, j = 1 to n, where n is a positive integer) bonded vertically and horizontally.
　マザーボード２４は、例えば、ガラスエポキシ樹脂、上述の熱硬化性樹脂、または、セラミック、ガラスで円板状に所定の厚さで成形されている。 The mother board 24 is formed in a disc-like shape with a predetermined thickness using, for example, glass epoxy resin, the above-described thermosetting resin, ceramic, or glass.
　外部接続ピン２６ａｉは、図８に示されるように、円周方向に沿って所定の角度で均等に離隔配置されて、複数の環状列を形成している。外部接続ピン２６ａｉの基端部は、マザーボード２４内に形成される導体層３０ａｉ（ｉ＝１～ｎ，ｎは正の整数）を介して後述する接触子ユニット２８ｉｊの１個の半田ボール２８ｂｉ（図１３参照）に電気的に接続されている。 As shown in FIG. 8, the external connection pins 26ai are equally spaced at a predetermined angle along the circumferential direction to form a plurality of annular rows. A base end portion of the external connection pin 26ai is connected to one solder ball 28bi (a contact unit 28ij described later) via a conductor layer 30ai (i = 1 to n, n is a positive integer) formed in the mother board 24. (See FIG. 13).
　接触子ユニット２８ｉｊは、図１１に拡大されて示されるように、マザーボード２４の一方の表面に接着される基板２８Ｂと、基板２８Ｂの一方の表面上に固定される一対の接触子２８ａｉ（ｉ＝１～ｎ，ｎは正の整数）とを含んで構成されている。 As shown in an enlarged view in FIG. 11, the contact unit 28ij includes a substrate 28B bonded to one surface of the motherboard 24 and a pair of contacts 28ai (i = 1 to n and n are positive integers).
　ガラスエポキシ樹脂、または上述の熱硬化性樹脂で成形される基板２８Ｂにおけるマザーボード２４の一方の表面に接着される表面には、図１２、図１３、および、図１４に拡大されて示されるように、各接触子２８ａｉに対応して半田ボール２８ｂｉ（ｉ＝１～ｎ，ｎは正の整数）が形成されている。半田ボール２８ｂｉは、６つの縦列となるように形成されている。各列は、所定の間隔をもって互いに略平行に形成されている。なお、半田ボール２８ｂｉのろう材には、Ｓｎ－Ｚｎ、Ｓｎ－Ｚｎ－Ｂｉなどの後述の第一のろう材よりも低融点のものとされる。 The surface bonded to one surface of the mother board 24 in the substrate 28B formed of the glass epoxy resin or the thermosetting resin described above is enlarged as shown in FIG. 12, FIG. 13, and FIG. A solder ball 28bi (i = 1 to n, n is a positive integer) is formed corresponding to each contact 28ai. The solder balls 28bi are formed in six columns. Each row is formed substantially parallel to each other with a predetermined interval. Note that the soldering material of the solder balls 28bi has a lower melting point than the first brazing material described later, such as Sn—Zn and Sn—Zn—Bi.
　各列の半田ボール２８ｂｉは、図１０に示されるように、マザーボード２４の内部に形成される導体層３０ａｉを介して外部接続ピン２６ａｉ（ｉ＝１～ｎ，ｎは正の整数）に電気的に接続されている。外部接続ピン２６ａｉは、図示が省略されるテストヘッド１２の接続用ソケットに接続される。 As shown in FIG. 10, the solder balls 28bi in each row are electrically connected to the external connection pins 26ai (i = 1 to n, n is a positive integer) through a conductor layer 30ai formed inside the mother board 24. It is connected to the. The external connection pin 26ai is connected to a connection socket of the test head 12 (not shown).
　また、各接触子２８ａｉに対応した各列の半田ボール２８ｂｉは、導体パターン２８ｗを介して貫通電極２８ｔの一方の開口端に接続されている。貫通電極２８ｔは、半田ボール２８ｂｉの列に沿って千鳥掛け状に形成されている。 Also, each row of solder balls 28bi corresponding to each contact 28ai is connected to one open end of the through electrode 28t via a conductor pattern 28w. The through electrodes 28t are formed in a staggered pattern along the rows of solder balls 28bi.
　さらに、基板２８Ｂの各角には、それぞれ、所定の高さを有する支持体２８ＳＴが設けられている。なお、支持体２８ＳＴの材料は、ろう材の濡れ性の悪い材料が好ましい。例えば、ステンレス材料を基板２８Ｂに挟み込むか、あるいは、貼り合せる方法などもある。 Furthermore, a support 28ST having a predetermined height is provided at each corner of the substrate 28B. Note that the material of the support 28ST is preferably a material with poor wettability of the brazing material. For example, there is a method of sandwiching or bonding a stainless material between the substrates 28B.
　支持体２８ＳＴにより、半田ボール２８ｂｉの直径がばらついた場合であっても、実装時、接触子ユニット２８ｉｊの実装高さ（マザーボード２４の表面から基板２８Ｂの表面までの高さ）のばらつきが抑制される。 Even when the diameter of the solder ball 28bi varies due to the support 28ST, variation in the mounting height of the contact unit 28ij (the height from the surface of the mother board 24 to the surface of the substrate 28B) is suppressed during mounting. The
　支持体２８ＳＴに隣接した４箇所には、マーカ２８ＭＢが形成されている。また、マーカ２８ＭＢ相互間の中間位置にも、マーカ２８ＭＢが形成されている。なお、マーカ２８ＭＢは、画像認識による接触子ユニット２８ｉｊのマザーボード２４における所定位置に対する位置決めを行うために使用される。 Markers 28MB are formed at four locations adjacent to the support 28ST. A marker 28MB is also formed at an intermediate position between the markers 28MB. The marker 28MB is used for positioning the contact unit 28ij with respect to a predetermined position on the mother board 24 by image recognition.
　貫通電極２８ｔの他方の開口端は、図１１に示されるように、マザーボード２４の他方の表面に開口している。各貫通電極２８ｔの他方の開口端は、その表面に形成される各導体パターン群２８Ｂ１、２８Ｂ２、２８Ｂ３、２８Ｂ４、２８Ｂ５、および、２８Ｂ６を構成する導体パターンの一端に接続されている。各導体パターンは、所定の間隔、例えば、上述のシリコンウェハＷＡの試験信号入出力用コンタクトパッド群を構成するコンタクトパッド相互間隔に対応して形成されている。各導体パターン上の他端側には、接触子２８ａｉが半田付け固定されている。基板２８Ｂにおける接触子２８ａｉの実装部分には、ろう材が、めっき法やスクリーン印刷などにより形成されている。なお、接触子の実装部分のろう材には、接触子ユニット実装時に熱の影響を極力受けないように、Ａｕ－Ｓｎ、Ｓｎ、Ｓｎ－Ａｇ、Ｓｎ－Ａｇ－Ｃｕなど比較的高融点のろう材（第１のろう材）が、用いられるのが望ましい。 The other opening end of the through electrode 28t is opened on the other surface of the mother board 24 as shown in FIG. The other open end of each through electrode 28t is connected to one end of a conductor pattern constituting each conductor pattern group 28B1, 28B2, 28B3, 28B4, 28B5, and 28B6 formed on the surface thereof. Each conductor pattern is formed corresponding to a predetermined interval, for example, a contact pad mutual interval constituting the test signal input / output contact pad group of the silicon wafer WA described above. A contact 28ai is fixed by soldering to the other end on each conductor pattern. A brazing material is formed on the mounting portion of the contact 28ai on the substrate 28B by plating or screen printing. It should be noted that the brazing material of the contact mounting part has a relatively high melting point such as Au—Sn, Sn, Sn—Ag, Sn—Ag—Cu so as not to be affected by heat when the contact unit is mounted. A material (first brazing material) is preferably used.
　これにより、基板２８Ｂが局所加熱されることにより、例えば、ガラス基材上に複数の接触子２８ａｉが実装された接触子ユニットが製造される。接触子ユニット２８ｉｊの状態で、接触子の実装精度や外観検査が行われ、不具合の接触子ユニットは、手直し又は廃棄される。その結果、実装密度が微小になるにつれ、例えば、局所加熱時の隣接する接触子への影響やろう材の不足による倒れなど、歩留低下につながる要因が多くなるので、接触子ユニット２８ｉｊでの選別は、歩留まりの向上にとって非常に有効となる。 Thus, by locally heating the substrate 28B, for example, a contact unit in which a plurality of contacts 28ai are mounted on a glass base material is manufactured. In the state of the contact unit 28ij, mounting accuracy and appearance inspection of the contact are performed, and the defective contact unit is repaired or discarded. As a result, as the mounting density becomes smaller, for example, there are many factors that lead to a decrease in yield, such as the influence on adjacent contacts during local heating and the collapse due to the lack of brazing material. Sorting is very effective for improving yield.
　接触子２８ａｉは、図１２に拡大されて示されるように、薄板金属材料でプレス加工により成形され、先端部に接点部を有するとともに、内部にスリットを有する可動片部２８Ｃと、可動片部２８Ｃの基端部に連なり基板２８Ｂに固定される固定部２８Ｆとから構成される。 As shown in an enlarged view in FIG. 12, the contact 28ai is formed by press working with a thin metal material, and has a contact piece at the tip and a movable piece 28C having a slit inside, and a movable piece 28C. And a fixed portion 28F that is fixed to the substrate 28B.
　図１１において、基板２８Ｂにおいて、その両端、導体パターン群２８Ｂ１、２８Ｂ２相互間、導体パターン群２８Ｂ２、２８Ｂ３相互間、導体パターン群２８Ｂ４、２８Ｂ５相互間、および、導体パターン群２８Ｂ５、２８Ｂ６相互間に位置する導体パターン近傍には、マーカ２８ＭＡが、合計８箇所に形成されている。なお、マーカ２８ＭＡは、画像認識による接触子ユニット２８ｉｊのマザーボード２４における所定位置に対する位置決めを行うために使用される。 In FIG. 11, the substrate 28B is positioned at both ends thereof, between the conductor pattern groups 28B1 and 28B2, between the conductor pattern groups 28B2 and 28B3, between the conductor pattern groups 28B4 and 28B5, and between the conductor pattern groups 28B5 and 28B6. In the vicinity of the conductor pattern to be performed, markers 28MA are formed at a total of eight locations. The marker 28MA is used for positioning the contact unit 28ij with respect to a predetermined position on the mother board 24 by image recognition.
　なお、接触子ユニット２８ｉｊにおける接触子は、斯かる例に限られることなく、例えば、図１７Ａ，１７Ｂ，１７Ｃ，１７Ｄおよび１７Ｅに示されるように、鋭利な針状の接点部を弾性変位可能に有する接触子４８ａｉが基板４８Ｂ上に一対支持されるもの、円弧状の接点部を弾性変位可能に有する接触子５０ａｉが基板５０Ｂ上に一対支持されるもの、釣鐘の輪郭のように曲げられた可動片部の先端に接点部を接触子５２ａｉが基板５２Ｂ上に一対支持されるもの、弓形の可動片部の一端に接点部を有する接触子５４ａｉが基板５４Ｂ上に一対支持されるもの、および、図１２に示される接触子においてスリットがないものに類似した形状とされる接触子５６ａｉが基板５６Ｂ上に一対支持されるものであってもよい。 Note that the contact in the contact unit 28ij is not limited to such an example. For example, as shown in FIGS. 17A, 17B, 17C, 17D, and 17E, the sharp needle-shaped contact portion can be elastically displaced. A pair of contacts 48ai that are supported on the board 48B, a pair of contacts 50ai that have arc-shaped contact portions that can be elastically displaced, and a movable that is bent like a contour of a bell. A pair of contacts 52ai that are supported on the substrate 52B with a contact portion at the tip of the piece, a pair of contacts 54ai that have a contact portion on one end of an arcuate movable piece, and a contact that is supported on the substrate 54B; A pair of contacts 56ai having a shape similar to that having no slit in the contacts shown in FIG. 12 may be supported on the substrate 56B.
　なお、接触子は、プレス加工に限られることなく、例えば、エッチング、ＭＥＭＳ、ワイヤーカット等により製造されてもよい。 In addition, a contactor is not restricted to press work, For example, you may manufacture by an etching, MEMS, a wire cut etc.
　斯かる構成において、シリコンウェハＷＡの電気的特性検査にあたり、先ず、シリコンウェハＷＡがステージ１６の被検査物搭載面１６Ｓにおける所定位置に位置決めされた状態で吸引手段が作動状態とされることにより、シリコンウェハＷＡが被検査物搭載面１６Ｓに保持される。 In such a configuration, in the electrical characteristic inspection of the silicon wafer WA, first, the suction means is activated in a state where the silicon wafer WA is positioned at a predetermined position on the inspection object mounting surface 16S of the stage 16, The silicon wafer WA is held on the inspection object mounting surface 16S.
　次に、テストヘッド１２のプローブカード２０が、シリコンウェハＷＡに対し近接せしめられる。その際、接触子ユニット２８ｉｊの接触子２８ａｉの接点部が、シリコンウェハＷＡの回路パターンＷＡｉｊのコンタクトパッド群に当接される。その際、一枚のシリコンウェハＷＡに対しての電気的特性検査は、例えば、２回に分けて行われるために所定の間隔をもった列ごとに、即ち、間引いた状態で行われる。 Next, the probe card 20 of the test head 12 is brought close to the silicon wafer WA. At that time, the contact portion of the contact 28ai of the contact unit 28ij is brought into contact with the contact pad group of the circuit pattern WAij of the silicon wafer WA. At that time, the electrical characteristic inspection for one silicon wafer WA is performed, for example, in two rows, that is, every column having a predetermined interval, that is, in a thinned state.
　続いて、コントローラ２２が試験信号群ＤＣをテストヘッド１２に供給し、電気的特性検査が行われる。これにより、コントローラ２２は、得られたデータ群ＤＱに基づいて電気的特性検査の良否を判定する。 Subsequently, the controller 22 supplies the test signal group DC to the test head 12, and the electrical characteristic inspection is performed. Thereby, the controller 22 determines the quality of the electrical characteristic inspection based on the obtained data group DQ.
　図１８は、本発明に係る接触子ユニットを備えるプローブカードの第３実施例の要部を概略的に示す。 FIG. 18 schematically shows a main part of a third embodiment of the probe card including the contact unit according to the present invention.
　図１０に示される例においては、外部接続ピン２６ａｉが導体層３０ａｉを介して直接的に接触子ユニット２８ｉｊに接続されている。一方、図１８に示される例においては、外部接続ピン２６ａｉが、導体層３０ａｉおよび接続ブロック部材３２に内蔵されるプローブピン３４ａｉ（ｉ＝１～ｎ，ｎは正の整数）を介して接触子ユニット５８ｉｊ（ｉ、ｊ＝１～ｎ，ｎは正の整数）に接続されるものである。 In the example shown in FIG. 10, the external connection pin 26ai is directly connected to the contact unit 28ij through the conductor layer 30ai. On the other hand, in the example shown in FIG. 18, the external connection pin 26ai is connected to the contact layer 30ai and the probe pin 34ai built in the connection block member 32 (i = 1 to n, n is a positive integer). It is connected to the unit 58ij (i, j = 1 to n, n is a positive integer).
　なお、図１８乃至図２２において、図１０に示される例における構成要素と同一の構成要素について同一の符号を付して示し、その重複説明を省略する。 18 to 22, the same components as those in the example shown in FIG. 10 are denoted by the same reference numerals, and redundant description thereof is omitted.
　ガラスエポキシ樹脂、セラミック等で成形される接続ブロック部材３２は、マザーボート２４に対して位置決めされ、ネジ等の所定の締結部材により固定されている。接続ブロック部材３２における各接触子ユニット５８ｉｊが位置決めされる位置には、複数のスプリングプローブのようなプローブピン３４ａｉ（ｉ＝１～ｎ，ｎは正の整数）群が各穴に貫通されて配置されている。なお、斯かる例に限られることなく、例えば、スプリングプローブのようなプローブピンの代わりに、弓形の板ばねで作られるコンタクトピンであってもよい。 The connection block member 32 formed of glass epoxy resin, ceramic or the like is positioned with respect to the mother boat 24 and fixed by a predetermined fastening member such as a screw. A group of probe pins 34ai (i = 1 to n, n are positive integers) such as a plurality of spring probes are disposed through the holes at positions where the contact units 58ij are positioned on the connection block member 32. Has been. In addition, it is not restricted to such an example, For example, instead of a probe pin like a spring probe, the contact pin made from an arcuate leaf | plate spring may be sufficient.
　接触子ユニット５８ｉｊは、図１９および図２０に拡大されて示されるように、マザーボード２４の一方の表面に接着される基板５８Ｂと、基板５８Ｂの一方の表面上に固定される一対の接触子２８ａｉ（ｉ＝１～ｎ，ｎは正の整数）とを含んで構成されている。 As shown in enlarged views in FIGS. 19 and 20, the contact unit 58ij includes a substrate 58B bonded to one surface of the mother board 24 and a pair of contacts 28ai fixed to one surface of the substrate 58B. (I = 1 to n, n is a positive integer).
　ガラスエポキシ樹脂で成形される基板５８Ｂにおけるマザーボード２４の一方の表面に接着される表面には、図２１および図２２に拡大されて示されるように、各接触子２８ａｉに対応してコンタクトパッド５８ｃｐｉ（ｉ＝１～ｎ，ｎは正の整数）が形成されている。接触子２８ａｉの相互間隔よりも大なる相互間隔で配されるコンタクトパッド５８ｃｐｉは、６つの縦列となるように形成されている。各列は、所定の間隔をもって互いに略平行に形成されている。 As shown in enlarged views in FIGS. 21 and 22, a contact pad 58cpi (corresponding to each contact 28ai is provided on the surface of the substrate 58B formed of glass epoxy resin, which is bonded to one surface of the mother board 24. i = 1 to n, where n is a positive integer). The contact pads 58 cpi arranged at a mutual interval larger than the mutual interval between the contacts 28 ai are formed to be six columns. Each row is formed substantially parallel to each other with a predetermined interval.
　また、各接触子２８ａｉに対応した各列のコンタクトパッド５８ｃｐｉは、導体パターン５８ｗを介して貫通電極５８ｔの一方の開口端に接続されている。貫通電極５８ｔは、コンタクトパッド５８ｃｐｉの列に沿って千鳥掛け状に形成されている。 Further, each row of contact pads 58cpi corresponding to each contact 28ai is connected to one open end of the through electrode 58t through a conductor pattern 58w. The through electrodes 58t are formed in a staggered pattern along the row of contact pads 58cpi.
　基板５８Ｂは、例えば、所定の紫外線硬化性接着剤により接続ブロック部材３２に接着されている。その紫外線硬化性接着剤は、例えば、１００℃加熱剥離可能な接着剤（型式Ａ－１５８２）とされる。この接着剤は、１００℃の加熱で樹脂が融解されることにより、剥離可能とされる。剥離後、その付着物は、アルコール系溶剤で溶解される。なお、接着剤は、斯かる例に限られることなく、例えば、８０℃加熱剥離可能な接着剤（型式Ａ－１５７９）、または、１６０℃加熱剥離可能な接着剤（型式Ａ－１６１１）であってもよい。 The substrate 58B is bonded to the connection block member 32 with a predetermined ultraviolet curable adhesive, for example. The ultraviolet curable adhesive is, for example, an adhesive (type A-1582) that can be peeled off by heating at 100 ° C. This adhesive can be peeled when the resin is melted by heating at 100 ° C. After peeling, the deposit is dissolved with an alcohol solvent. The adhesive is not limited to such an example, and may be, for example, an adhesive that can be peeled off at 80 ° C. (model A-1579) or an adhesive that can be peeled off at 160 ° C. (type A-1611). May be.
　また、８個のマーカ５８ＭＢが、図２１に示されるように、上述の基板２８Ｂと同様な位置に形成されている。貫通電極５８ｔの他方の開口端は、図１９に示されるように、接続ブロック部材３２の他方の表面に向けて開口している。各貫通電極５８ｔの他方の開口端は、その表面に形成される各導体パターン群５８Ｂ１、５８Ｂ２、５８Ｂ３、５８Ｂ４、５８Ｂ５、および、５８Ｂ６を構成する導体パターンの一端に接続されている。各導体パターンは、所定の間隔、例えば、上述のシリコンウェハＷＡの試験信号入出力用コンタクトパッド群を構成するコンタクトパッド相互間隔に対応して形成されている。各導体パターン上の他端側には、接触子２８ａｉが半田付け固定されている。 Also, as shown in FIG. 21, eight markers 58MB are formed at the same positions as the above-described substrate 28B. The other opening end of the through electrode 58t is opened toward the other surface of the connection block member 32 as shown in FIG. The other open end of each through electrode 58t is connected to one end of a conductor pattern constituting each conductor pattern group 58B1, 58B2, 58B3, 58B4, 58B5, and 58B6 formed on the surface thereof. Each conductor pattern is formed corresponding to a predetermined interval, for example, a contact pad mutual interval constituting the test signal input / output contact pad group of the silicon wafer WA described above. A contact 28ai is fixed by soldering to the other end on each conductor pattern.
　図１９において、基板５８Ｂにおいて、その両端、導体パターン群５８Ｂ１、５８Ｂ２相互間、導体パターン群５８Ｂ２、５８Ｂ３相互間、導体パターン群５８Ｂ４、５８Ｂ５相互間、および、導体パターン群５８Ｂ５、５８Ｂ６相互間に位置する導体パターン近傍には、マーカ５８ＭＡが、合計８箇所に形成されている。なお、マーカ５８ＭＡは、画像認識による接触子ユニット５８ｉｊの接続ブロック部材３２における所定位置に対する位置決めを行うために使用される。 In FIG. 19, the substrate 58B is positioned at both ends thereof, between the conductor pattern groups 58B1 and 58B2, between the conductor pattern groups 58B2 and 58B3, between the conductor pattern groups 58B4 and 58B5, and between the conductor pattern groups 58B5 and 58B6. In the vicinity of the conductor pattern to be performed, markers 58MA are formed in a total of eight locations. The marker 58MA is used for positioning the contact unit 58ij with respect to a predetermined position in the connection block member 32 by image recognition.
　従って、接触子ユニットを単体で検査し良品のみ使用することで、製造時の歩留向上となる。また、使用時のアクシデントや耐久寿命により破損した箇所をユニット単位で交換修理可能となり運用コストの低減が可能となる。接触子ユニット裏面に外部接続端子を設けることで、接触子ユニットの実装密度が上がり、より効率的なテストが可能となる。 Therefore, it is possible to improve the yield during production by inspecting the contact unit alone and using only good products. In addition, it is possible to replace and repair parts damaged due to accidents during use and durability, and unit costs can be reduced. By providing the external connection terminal on the back surface of the contact unit, the mounting density of the contact unit is increased and a more efficient test can be performed.
　接続ブロック部材３２のスプリングプローブ３４ａｉにより、例えば、パッド配置の異なるＩＣに対しても接触子ユニットの外部接続端子位置を標準化することにより同一のマザーボードが使用可能となり、大幅なコストダウンが図られる。 By using the spring probe 34ai of the connection block member 32, for example, the same motherboard can be used by standardizing the position of the external connection terminal of the contact unit even for ICs having different pad arrangements, and the cost can be greatly reduced.
　図２３は、本発明に係る接触子ユニットを備えるプローブカードの第４実施例の要部を概略的に示す。 FIG. 23 schematically shows a main part of a fourth embodiment of a probe card provided with a contact unit according to the present invention.
　図１０に示される例においては、外部接続ピン２６ａｉが導体層３０ａｉを介して直接的に接触子ユニット２８ｉｊに接続されている。一方、図２３に示される例においては、外部接続ピン２６ａｉが、導体層３０ａｉ、ＦＰＣコネクタ６８ＣＮ、および、フレキシブル配線基板６８ＦＣを介して接触子ユニット６８ｉｊに接続されている。 In the example shown in FIG. 10, the external connection pin 26ai is directly connected to the contact unit 28ij through the conductor layer 30ai. On the other hand, in the example shown in FIG. 23, the external connection pins 26ai are connected to the contact unit 68ij through the conductor layer 30ai, the FPC connector 68CN, and the flexible wiring board 68FC.
　なお、図２３乃至図２６において、図１０に示される例における構成要素と同一の構成要素について同一の符号を付して示し、その重複説明を省略する。 23 to 26, the same components as those in the example shown in FIG. 10 are denoted by the same reference numerals, and redundant description thereof is omitted.
　接触子ユニット６８ｉｊは、図２４，図２５、および、図２６に拡大されて示されるように、マザーボード２４の一方の表面に接着される基板６８Ｂと、基板６８Ｂの一方の表面上に固定される一対の接触子２８ａｉ（ｉ＝１～ｎ，ｎは正の整数）と、一端がＦＰＣコネクタ６８ＣＮに接続され、他端が基板６８Ｂに接続されるフレキシブル配線基板６８ＦＣとを含んで構成されている。 As shown in enlarged views in FIGS. 24, 25, and 26, the contact unit 68ij is fixed on one surface of the substrate 68B and a substrate 68B bonded to one surface of the motherboard 24. A pair of contacts 28ai (i = 1 to n, n are positive integers) and a flexible wiring board 68FC having one end connected to the FPC connector 68CN and the other end connected to the board 68B are configured. .
　ガラスエポキシ樹脂で成形される基板６８Ｂは、例えば、所定の紫外線硬化性接着剤によりマザーボード２４に接着されている。その紫外線硬化性接着剤は、例えば、１００℃加熱剥離可能な接着剤（型式Ａ－１５８２）とされる。この接着剤は、１００℃の加熱で樹脂が融解されることにより、剥離可能とされる。剥離後、その付着物は、アルコール系溶剤で溶解される。なお、接着剤は、斯かる例に限られることなく、例えば、８０℃加熱剥離可能な接着剤（型式Ａ－１５７９）、または、１６０℃加熱剥離可能な接着剤（型式Ａ－１６１１）であってもよい。 The substrate 68B formed of glass epoxy resin is bonded to the mother board 24 with a predetermined ultraviolet curable adhesive, for example. The ultraviolet curable adhesive is, for example, an adhesive (type A-1582) that can be peeled off by heating at 100 ° C. This adhesive can be peeled when the resin is melted by heating at 100 ° C. After peeling, the deposit is dissolved with an alcohol solvent. The adhesive is not limited to such an example, and may be, for example, an adhesive that can be peeled off at 80 ° C. (model A-1579) or an adhesive that can be peeled off at 160 ° C. (type A-1611). May be.
　また、基板６８Ｂの一方の表面には、導体パターン群６８Ｂ１、６８Ｂ２、６８Ｂ３、６８Ｂ４、６８Ｂ５、および、６８Ｂ６が形成されている。 Further, conductor pattern groups 68B1, 68B2, 68B3, 68B4, 68B5, and 68B6 are formed on one surface of the substrate 68B.
　導体パターン群を構成する各導体パターンは、所定の間隔、例えば、上述のシリコンウェハＷＡの試験信号入出力用コンタクトパッド群を構成するコンタクトパッド相互間隔に対応して形成されている。各導体パターン上の他端側には、接触子２８ａｉがろう付けされている。 Each conductor pattern constituting the conductor pattern group is formed corresponding to a predetermined interval, for example, a mutual interval between contact pads constituting the test signal input / output contact pad group of the silicon wafer WA described above. A contact 28ai is brazed to the other end side of each conductor pattern.
　図１９において、基板６８Ｂにおいて、その両端、導体パターン群６８Ｂ１、６８Ｂ２相互間、導体パターン群６８Ｂ２、６８Ｂ３相互間、導体パターン群６８Ｂ４、６８Ｂ５相互間、および、導体パターン群６８Ｂ５、６８Ｂ６相互間に位置する導体パターン近傍には、マーカ６８Ｍが、合計８箇所に形成されている。なお、マーカ６８Ｍは、画像認識による接触子ユニット６８ｉｊのマザーボード２４における所定位置に対する位置決めを行うために使用される。さらに、フレキシブル配線基板６８ＦＣの一端には、図２７に示されるように、コンタクトパッド群６８ＦＣＰが形成されている。 In FIG. 19, the substrate 68B is positioned at both ends thereof, between the conductor pattern groups 68B1 and 68B2, between the conductor pattern groups 68B2 and 68B3, between the conductor pattern groups 68B4 and 68B5, and between the conductor pattern groups 68B5 and 68B6. In the vicinity of the conductor pattern to be performed, markers 68M are formed in a total of eight locations. The marker 68M is used for positioning the contact unit 68ij with respect to a predetermined position on the mother board 24 by image recognition. Further, as shown in FIG. 27, a contact pad group 68FCP is formed at one end of the flexible wiring board 68FC.
　従って、基板６８Ｂに貫通電極等を形成する必要がないので安価に接触子ユニット６８ｉｊの製作が可能となる。 Therefore, since it is not necessary to form a through electrode on the substrate 68B, the contact unit 68ij can be manufactured at low cost.
　上述のプローブカード２０における接触子ユニット２８ｉｊを個別に交換することができる本発明に係る接触子ユニットの交換方法の一例においては、先ず、図２８に示されるように、マザーボード２４における所定の位置ＡＲに接合され交換が必要とされる接触子ユニット２８ｉｊが取り外される。接触子ユニット２８ｉｊを取り外すにあたっては、先ず、図２９および図３０に示されるように、リペアノズル７０が所定の位置ＡＲに配される接触子ユニット２８ｉｊに被される。リペアノズル７０内には、図示が省略される光源から赤外線または温風が所定時間、照射または送風される。 In an example of the contact unit replacement method according to the present invention in which the contact unit 28ij in the probe card 20 can be replaced individually, first, as shown in FIG. The contact unit 28ij that is joined to the connector and needs to be replaced is removed. In removing the contact unit 28ij, first, as shown in FIGS. 29 and 30, the repair nozzle 70 is put on the contact unit 28ij disposed at a predetermined position AR. In the repair nozzle 70, infrared rays or warm air is irradiated or blown from a light source (not shown) for a predetermined time.
　これにより、上述の半田ボールが融解されることとなるので接触子ユニット２８ｉｊが容易に取り外される。 As a result, the above-described solder ball is melted, so that the contact unit 28ij is easily removed.
　次に、図２８に示されるように、新たな接触子ユニット２８ｉｊがマザーボード２４における所定の位置ＡＲに半田ボールを介して接合される。その際、マザーボード２４におけるマーカ２４ＭＡ～２４ＭＤと、接触子ユニット２８ｉｊのマーカ２４ＭＡとが参照され、新たな接触子ユニット２８ｉｊが、画像認識技術により所定の位置ＡＲに位置決めされる。 Next, as shown in FIG. 28, a new contact unit 28ij is joined to a predetermined position AR on the mother board 24 via a solder ball. At that time, the markers 24MA to 24MD on the mother board 24 and the marker 24MA of the contact unit 28ij are referred to, and the new contact unit 28ij is positioned at the predetermined position AR by the image recognition technique.
　これにより、接触子ユニットの交換作業が終了することとなる。 This completes the replacement of the contact unit.
　従って、低融点バンプを形成することで、従来のＢＧＡ型と同様な実装方法、及び装置が利用できる。また、接触子ユニットの交換修理の際にも、一般的なリワーク装置が利用できる。さらに、第二のろう材を低融点とすることで、接触子の実装には影響を与えずに接触子ユニットの交換修理が可能となる。 Therefore, by forming the low melting point bump, the same mounting method and apparatus as the conventional BGA type can be used. Also, a general rework device can be used for replacement and repair of the contact unit. Furthermore, by making the second brazing material have a low melting point, it is possible to replace and repair the contact unit without affecting the mounting of the contact.

Claims (6)

  1. 　被検査物における入出力信号用端子群に当接または離隔せしめられる複数の接触子と、該複数の接触子を所定の個数ごとに一方の表面に支持する基板と、該基板における相対向する他方の表面に形成され該複数の接触子に電気的に接続される導体層と、をそれぞれ、含んでなる複数の接触子ユニットと、
    　外部接続端子と、前記複数の接触子ユニットと該外部接続端子とを電気的に接続する導体層とを有し、前記複数の接触子ユニットを支持するマザーボードと、を備え、
    　前記複数の接触子ユニットが、加熱剥離可能な接着剤またはろう材により、前記マザーボードの表面に直接的または間接的に取り外し可能に接合されることを特徴とする接触子ユニットを備えるプローブカード。     A plurality of contacts that are in contact with or separated from the input / output signal terminal group in the object to be inspected, a substrate that supports the plurality of contacts on one surface for each predetermined number, and the other opposite of the substrate A plurality of contact units each including a conductor layer formed on the surface of the contact layer and electrically connected to the plurality of contacts.
    An external connection terminal, a plurality of contact units and a conductor layer that electrically connects the external connection terminals, and a mother board that supports the plurality of contact units,
    A probe card comprising a contact unit, wherein the plurality of contact units are detachably joined directly or indirectly to the surface of the mother board by a heat-peelable adhesive or brazing material.
  2. 　前記複数の接触子が、第１のろう材により前記基板に固定され、前記接触子ユニットの導体層が、該第１のろう材の融点よりも低い融点を有する第２のろう材で作られた半田ボールであることを特徴とする請求項１記載の接触子ユニットを備えるプローブカード。 The plurality of contacts are fixed to the substrate by a first brazing material, and the conductor layer of the contact unit is made of a second brazing material having a melting point lower than the melting point of the first brazing material. The probe card comprising the contact unit according to claim 1, wherein the probe card is a solder ball.
  3. 　前記マザーボードの導体層に電気的に接続されるコンタクト端子を内蔵する接続ブロック部材をさらに備え、前記複数の接触子ユニットが、該コンタクト端子を介して前記マザーボードの導体層に電気的に接続されることを特徴とする請求項１記載の接触子ユニットを備えるプローブカード。 It further comprises a connection block member containing a contact terminal electrically connected to the conductor layer of the motherboard, and the plurality of contact units are electrically connected to the conductor layer of the motherboard via the contact terminal A probe card comprising the contact unit according to claim 1.
  4. 　前記接触子ユニットの基板は、前記マザーボードに当接される支持体を有することを特徴とする請求項２記載の接触子ユニットを備えるプローブカード。 3. The probe card comprising the contact unit according to claim 2, wherein the substrate of the contact unit has a support that is in contact with the motherboard.
  5. 　前記接触子ユニットが、該接触子ユニットの基板の導体層に接続されるフレキシブル配線基板、および、前記マザーボードに設けられ該フレキシブル配線基板に接続されるコネクタを介して該マザーボードの導体層に電気的に接続されることを特徴とする請求項１記載の接触子ユニットを備えるプローブカード。 The contact unit is electrically connected to the conductor layer of the motherboard via a flexible wiring board connected to the conductor layer of the board of the contact unit and a connector provided on the motherboard and connected to the flexible wiring board. The probe card comprising the contact unit according to claim 1, wherein the probe card is connected to the probe card.
  6. 　請求項１記載の前記マザーボードの所定位置に取り外し可能に接合された前記複数の接触子ユニットのうちの１個の接触子ユニットを、赤外線または加熱空気が供給されるリペアノズルの内側に所定時間、配し、
    　前記所定時間経過後、前記１個の接触子ユニットをリペアノズルの内側から取り外し、
    　新たな接触子ユニットを接合材により前記マザーボードの所定位置に接合することを含む接触子ユニットの交換方法。     A contact unit of one of the plurality of contact units removably joined to a predetermined position of the motherboard according to claim 1 for a predetermined time inside a repair nozzle to which infrared rays or heated air is supplied, Arrange
    After the predetermined time has elapsed, the one contact unit is removed from the inside of the repair nozzle,
    A method for replacing a contactor unit, comprising joining a new contactor unit to a predetermined position of the motherboard with a bonding material.
PCT/JP2009/053760 2008-03-07 2009-02-27 Probe card provided with contact units, and method of exchanging contact units WO2009110392A1 (en)

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JP5320309B2 (en) * 2010-01-15 2013-10-23 日本電子材料株式会社 Probe card
JP6092509B2 (en) * 2011-10-17 2017-03-08 東京エレクトロン株式会社 Contact terminal support and probe card
JP6220596B2 (en) * 2013-08-01 2017-10-25 東京エレクトロン株式会社 Prober
KR102228317B1 (en) * 2020-10-26 2021-03-16 주식회사 프로이천 Probe card for testing wafer

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