WO2009081952A1 - 基板ホルダー、基板ホルダーを用いた成膜方法、ハードディスクの製造方法、成膜装置、プログラム - Google Patents
基板ホルダー、基板ホルダーを用いた成膜方法、ハードディスクの製造方法、成膜装置、プログラム Download PDFInfo
- Publication number
- WO2009081952A1 WO2009081952A1 PCT/JP2008/073477 JP2008073477W WO2009081952A1 WO 2009081952 A1 WO2009081952 A1 WO 2009081952A1 JP 2008073477 W JP2008073477 W JP 2008073477W WO 2009081952 A1 WO2009081952 A1 WO 2009081952A1
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- WIPO (PCT)
- Prior art keywords
- substrate
- bias voltage
- insulating substrate
- supporting
- applying
- Prior art date
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- 239000000758 substrate Substances 0.000 title claims abstract description 592
- 238000000034 method Methods 0.000 title claims description 48
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 210000000078 claw Anatomy 0.000 claims description 199
- 239000010408 film Substances 0.000 claims description 184
- 230000015572 biosynthetic process Effects 0.000 claims description 48
- 239000010410 layer Substances 0.000 claims description 42
- 239000010409 thin film Substances 0.000 claims description 25
- 238000000151 deposition Methods 0.000 claims description 19
- 230000008021 deposition Effects 0.000 claims description 15
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 238000012546 transfer Methods 0.000 claims description 5
- 239000011810 insulating material Substances 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 4
- 239000011241 protective layer Substances 0.000 claims description 4
- 238000009751 slip forming Methods 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 11
- 239000002184 metal Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000001174 ascending effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000012905 input function Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/851—Coating a support with a magnetic layer by sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B23/00—Record carriers not specific to the method of recording or reproducing; Accessories, e.g. containers, specially adapted for co-operation with the recording or reproducing apparatus ; Intermediate mediums; Apparatus or processes specially adapted for their manufacture
- G11B23/02—Containers; Storing means both adapted to cooperate with the recording or reproducing means
- G11B23/04—Magazines; Cassettes for webs or filaments
- G11B23/041—Details
- G11B23/042—Auxiliary features
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting substrates others than wafers, e.g. chips
Definitions
- the present invention relates to a substrate holder used when continuously forming a plurality of layers of thin films on both main surfaces of an insulating substrate in a manufacturing process of a hard disk, a film forming method using the substrate holder, and a hard disk manufacturing method
- the present invention relates to a film forming apparatus and the like.
- Patent Document 1 discloses an apparatus provided with a substrate transfer chamber and a substrate transfer mechanism. It is disclosed.
- FIG. 6 shows a schematic view of the main part of the apparatus according to FIG.
- the substrate holder includes a main body 21 and a plurality of substrate support claws 23a and 23b, and holds the insulating substrate 22 so that both main surfaces are parallel to each other in the vertical direction.
- the substrate 22 held by the substrate holder is held by the substrate transfer mechanism 31, and the substrate support claw 23b is pushed down by a release mechanism (not shown), thereby 22 is released from the substrate support claws 23a and 23b.
- the substrate 22 is rotated so that the positions of the substrate support claws 23a and 23b are on the surface of the underlying layer to support the substrate 22 again, whereby the underlying layer on the substrate 22 and the main body 21 of the substrate holder are electrically connected.
- the substrate holder is moved to a film forming chamber for performing a bias voltage applying step, and an electrode movable portion (not shown) of the bias voltage supply electrode is brought into contact with the main body 21 of the substrate holder, via the main body 21 and the substrate support claws 23a and 23b. Then, the next film is formed while applying a bias voltage to the underlayer.
- the substrate 22 is once transferred from the substrate holder to the substrate holding mechanism 31 after the base layer is formed, and the substrate 22 is rotated and then re-supported by the substrate holder. There was a risk of the substrate falling during re-support.
- the substrate transfer mechanism 31 has a complicated structure, and a dedicated vacuum chamber equipped with the mechanism is required, resulting in a problem that the entire apparatus is increased in size.
- Patent Documents 2 to 4 provide a nail for applying a bias voltage separately from the substrate supporting nail originally provided in the substrate holder, and the bias is applied only in the bias voltage applying film forming process.
- An apparatus for forming a film by bringing a nail for voltage application into contact with a substrate is disclosed. Schematic diagrams of the substrate holder of such an apparatus are shown in FIGS. 6A, B, 7A, and B, respectively.
- 6A and 6B includes a main body 41 and a plurality of substrate support claws 43, and further includes a bias voltage application claw 44.
- the substrate support claws 43 are all in contact with the substrate 42, and the bias voltage application-specific claws 44 are pushed down by a mechanism (not shown) when forming the base layer (FIG. 6A).
- the mechanism that pushed down the bias voltage application nail 44 is released to bring the bias voltage application nail 44 into contact with the underlayer, and a bias voltage is applied to the underlayer from the bias voltage power supply 45 via the bias voltage application nail 44.
- Film formation is performed while applying (FIG. 6B).
- FIG. 7A and 7B includes a main body 51 and a plurality of substrate support claws 53, and further includes a bias voltage application claw 54.
- the substrate 52 is normally supported only by the substrate support claws 53, and the bias voltage application-specific claws 54 are detached from the substrate (FIG. 7A).
- underlayer film formation is performed, and then, in the bias voltage application film formation process, the bias voltage application nail 54 is pushed up by the bias voltage supply bar 56 and brought into contact with the underlayer (FIG. 7B).
- film formation is performed while a bias voltage is applied to the underlying layer from the bias voltage power supply 55 via the bias voltage supply bar 56 and the bias voltage application dedicated claw 54.
- the structure is simple because only the bias voltage application claw is brought into contact with the substrate only in the step of applying the bias voltage.
- the present invention is used in a continuous film forming process of a plurality of thin films including a bias voltage applying film forming process and a bias voltage non-applying film forming process, and has a simple structure and does not cause a problem of upsizing of a film forming apparatus.
- An object of the present invention is to provide a substrate holder having a small shadow area during film formation.
- Another object of the present invention is to provide a film forming apparatus and a film forming method using the substrate holder.
- a substrate holder according to the present invention that achieves the above object is a substrate holder for supporting an insulating substrate, A conductive substrate holder body having an opening; A first support member that is formed so as to protrude from the inner periphery of the opening into the opening and includes a clamping member for supporting one end of the insulating substrate; A holding member for supporting the other end of the insulating substrate, and a second support member that protrudes into the opening or is movable so as to be retracted from the opening.
- At least one of the first support members is a bias voltage application support member capable of applying a bias voltage to the insulating substrate
- the second support member includes the opening so that the sandwiching member of the bias voltage application support member is separated from the insulating substrate. Projecting toward the inside, When the insulating substrate is supported by the holding member of the bias voltage application supporting member, the second supporting member is configured such that the other end of the insulating substrate is held by the holding member of the second supporting member. The retraction movement is performed from a supported position to a position where the insulating substrate is supported by a holding member of the bias voltage application supporting member.
- a film forming apparatus that achieves the above object is a film forming apparatus that continuously forms a plurality of thin films simultaneously on both surfaces of an insulating substrate, A first deposition chamber for depositing a conductive film on the insulating substrate without applying a voltage to the insulating substrate; A second deposition chamber for depositing a thin film on the insulating substrate while applying a voltage to the insulating substrate; A conductive substrate holder main body having an opening, a projecting member projecting from the inner periphery of the opening into the opening, and a holding member for supporting one end of the insulating substrate; and A first support member including a bias voltage applying support member capable of applying a bias voltage to the insulating substrate; and a holding member for supporting the other end of the insulating substrate, and facing the opening.
- a substrate holder having a second support member that protrudes or is movable so as to be retracted from within the opening;
- the second film-forming chamber is provided in the first film forming chamber and supports the substrate by the holding member of the second supporting member so that the holding member of the first supporting member is separated from the substrate.
- the insulating member is moved by the holding member of the first supporting member from a position where the other end portion of the insulating substrate is supported by the holding member of the second supporting member.
- Drive means for moving the second support member to a position where the substrate is supported;
- a voltage applying means provided in the second film forming chamber for applying a voltage to the first support member;
- Control means for controlling movement by the drive means, application of the voltage by the voltage application means, operation of the first film formation chamber, and operation of the second film formation chamber;
- the first film formation chamber controlled by the control means forms a conductive film on the substrate at a position where the holding member of the first support member is separated from the substrate,
- the control means controls the driving means to lower the second support member to a position where the substrate on which the conductive film is formed is supported by the clamping member of the first support member.
- the control means controls the voltage application means so that the voltage is applied to the first support member, and controls the operation of the second film formation chamber while applying the voltage, thereby controlling the conductivity.
- a thin film is formed on an insulating substrate on which a film is formed.
- the film forming method according to the present invention that achieves the above object is a method in which an insulating substrate is supported by a substrate support member in a vacuum processing chamber, and a plurality of thin films are sequentially formed on the surface of the insulating substrate.
- the plurality of thin films at least one layer is formed by a bias sputtering method, A conductive substrate holder main body having an opening, and a pinching member formed to project from the inner periphery of the opening toward the opening, and for supporting one end of the insulating substrate; and A first support member including a bias voltage applying support member capable of applying a bias voltage to the insulating substrate; and a holding member for supporting the other end of the insulating substrate, and facing the opening.
- a substrate holder having a second support member that protrudes or is movable so as to be retracted from within the opening; Transporting the substrate holder into a first deposition chamber; Forming a base layer, which is a conductive film, on the insulating substrate while supporting the insulating substrate by the second supporting member and a first supporting member other than the bias voltage applying supporting member; , Transporting the substrate holder to a second deposition chamber; Supporting the insulating substrate with a first support member, and forming a thin film on the insulating substrate while applying a bias voltage to the insulating substrate from the bias voltage applying support member; It is characterized by having.
- a program according to the present invention that achieves the above object is a method of supporting an insulating substrate by a substrate support member in a vacuum processing chamber and sequentially forming a plurality of thin films on the surface of the insulating substrate.
- a program for causing a computer to execute a film forming method in which at least one of the plurality of thin films is formed by a bias sputtering method, and the film forming method includes: A conductive substrate holder main body having an opening, and a pinching member formed to project from the inner periphery of the opening toward the opening, and for supporting one end of the insulating substrate; and A first support member including a bias voltage applying support member capable of applying a bias voltage to the insulating substrate; and a holding member for supporting the other end of the insulating substrate, and facing the opening.
- a substrate holder having a second support member that protrudes or is movable so as to be retracted from within the opening; Transporting the substrate holder into a first deposition chamber; Forming a base layer, which is a conductive film, on the insulating substrate while supporting the insulating substrate by the second supporting member and a first supporting member other than the bias voltage applying supporting member; , Transporting the substrate holder to a second deposition chamber; Supporting the insulating substrate with a first support member, and forming a thin film on the insulating substrate while applying a bias voltage to the insulating substrate from the bias voltage applying support member; It is characterized by having.
- the present invention it is used in a continuous film forming process of a plurality of thin films including a bias voltage applying film forming process and a bias voltage non-applying film forming process, and there is a problem that the structure is simple and the film forming apparatus is enlarged.
- a substrate holder having a small shadow area at the time of film formation a film formation apparatus using the substrate holder, and a film formation method.
- the structure is simple and the size of the apparatus is not increased, the number of times the nail is detached from the substrate as a whole is reduced, the generation of particles is suppressed, and the shadow area is also reduced as compared with the prior art.
- the present invention it is possible to perform film formation with a reduced shadow area more efficiently and with a higher yield than in the past, and it is possible to obtain a member having a higher quality by continuously forming a plurality of thin layers such as a hard disk. And can be provided at low cost.
- FIG. 1 shows the state which hold
- 3 is a block diagram showing a functional configuration of a control unit 100.
- FIG. 11B shows the state which the drive means 14 descend
- FIG. 11B shows the state supported.
- the driving means 14 is raised to come into contact with the auxiliary board support claw 6, and the auxiliary board support claw 6 is raised and brought into contact with the board 2.
- FIG. 11A It is a figure which expands and shows the state of the board
- FIG. 4 is a perspective view of the configuration example of FIG. 3 in which a driving unit 14 and a bias voltage applying unit 16 are arranged in a direction perpendicular to the main body 1 of the substrate holder.
- FIGS. 1 and 2 are views showing a state in which a substrate is held in a preferred embodiment of the first substrate holder of the present invention.
- FIG. 1 shows a case where a bias voltage is applied and
- FIG. 2 shows a case where a bias voltage is not applied. Shows the state.
- 1 is a substrate holder main body
- 2 is an insulating substrate
- 3 and 5 are substrate support claws
- 6 is an auxiliary substrate support claw
- 7 is an elastic member constituted by, for example, a leaf spring.
- the substrate holder of the present invention includes a plurality of substrate support claws 3, 3, 5, and 5 that support the insulating substrate 2, and a conductive substrate holder main body (hereinafter referred to as "main body 1").
- the auxiliary substrate support claw 6 is provided.
- the main body 1 has a flat plate shape, and has an opening larger than the outer shape of the insulating substrate 2 at the center, and the substrate support claws 3, 3, 5, and 5 from the inner periphery of the opening from the main body 1 in the opening. Projects into the opening.
- the main body 1 is configured so that a bias voltage applying means provided outside can be contacted or non-contacted and a bias voltage can be applied from the outside.
- the substrate support claws 3, 3, 5, and 5 are formed so as to protrude from the inner periphery of the opening formed in the main body 1 of the substrate holder into the opening, and are arranged at one end around the insulating substrate (the outer periphery of the substrate).
- Part) which functions as a first support member provided with a clamping member for supporting.
- at least one of the first support members functions as a bias voltage application support member for applying a bias voltage to the substrate.
- the plurality of substrate support claws 3, 3, 5, and 5 are all made of a conductive material and are electrically connected to the main body 1.
- the substrate 2 is held at a predetermined distance from the main body 1 by the substrate support claw in the opening of the main body 1 arranged vertically. That is, the substrate support claws 3, 3, 5, and 5 come into contact with the outer end surface of the substrate 2 to hold the substrate 2 vertically in the opening of the main body 1.
- the auxiliary substrate support claw 6 is disposed such that its tip is located below the substrate 2 and can be moved up and down.
- the lower end of the auxiliary substrate support claw 6 is connected to the drive means 14, and the operation of the drive means 14 causes the auxiliary substrate support claw 6 to be raised (projected into the opening) or lowered (retracted from the opening). Is possible.
- the control unit 100 is connected to the driving unit 14 and raises (projects) the driving unit 14 or moves down (retracts) depending on the bias voltage application film forming process or the bias voltage non-application film forming process. It is possible to control the vertical movement to be performed.
- substrate support claws 3, 3 and 5, 5 are arranged in two places in the upper half of the substrate 2 and two places in the lower half, respectively.
- the substrate 2 is supported by all of the substrate support claws 3, 3, 5, and 5.
- the auxiliary substrate support claw 6 is pushed upward to bring the auxiliary substrate support claw 6 into contact with the substrate 2.
- the driving means 14 pushes up the auxiliary substrate support claw 6 as it is, the substrate 2 is pushed upward by the gap with the main body 1 as shown in FIG. 2, and the substrate support that supported the substrate 2 from below the substrate 2 is supported.
- the auxiliary substrate support claw 6 includes a holding member for supporting the other end portion of the insulating substrate, protrudes toward the opening formed in the main body 1 of the substrate holder, or retracts from the opening. It functions as a second support member that can move.
- the holding member of the bias voltage application support member for example, the substrate support claws 5 and 5
- the holding member of the bias voltage application supporting member for example, the substrate supporting claws 5, 5
- the holding member of the auxiliary substrate supporting claw 6 (second supporting member) is separated from the substrate and supports the auxiliary substrate.
- the substrate moves from the position supported by the clamping member of the claw 6 (second support member) to the position supported by the clamping member of the bias voltage application support member (substrate support claw 5, 5).
- the holding members of the substrate support claws 3, 3, 5, 5 and the auxiliary substrate support claws 6 are V-shaped or U-shaped in the normal direction cross section of the main surface of the substrate 2 so that the substrate 2 can be held well. It is preferable to have a configuration in which a concave portion such as the above is provided and the end surface of the substrate 2 is sandwiched in the concave portion.
- an elastic member 7 composed of, for example, a leaf spring is attached below the auxiliary substrate support claw 6 and pushes the auxiliary substrate support claw 6 upward in accordance with the ascending operation of the driving means 14. At that time, the elastic member 7 is pressed. Therefore, if the force that pushes up the auxiliary substrate support claw 6 upward is released by the lowering operation of the driving means 14, the auxiliary substrate support claw 6 is automatically moved downward by the restoring force of the elastic member 7 and the substrate 2. The substrate support claws 5 and 5 come into contact with the substrate 2 again at the same time as the substrate 2 returns downward, and the substrate support claws 5 and 5 support the substrate 2 returned downward.
- the auxiliary substrate support claws 6 are moved up and down to come into contact / non-contact with the substrate 2 so that the substrate support claws 5, 5 are not in contact with the substrate 2. ⁇ Can be contacted. Therefore, the substrate 2 takes two states, a state where it is supported by the substrate support claws 3, 3 and the auxiliary substrate support claws 6, and a state where it is supported by the substrate support claws 3, 3, 5, 5.
- the number of the substrate support claws is small as long as the substrate 2 can be stably held, because the shadow area by the claws is reduced.
- the substrate support claws 3 and 3 may be one above the substrate 2. Further, only one of the substrate support claws 5 and 5 may be used.
- FIG. 1 An embodiment of the film forming apparatus of the present invention using the substrate holder illustrated in FIGS. 1 and 2 is schematically shown in FIG.
- the film forming apparatus of the present invention includes a plurality of film forming chambers, and a transport unit for transporting between the plurality of film forming chambers while holding the insulating substrate 2 vertically on a substrate holder.
- FIG. 3 is a diagram illustrating a part of the film forming apparatus.
- reference numerals 11a and 11b denote film forming chambers
- the film forming chamber 11a is used for film formation without applying a bias voltage
- the film forming chamber 11b is used for film formation with a bias voltage applied.
- Reference numerals 13a to 13c denote gate valves.
- the film forming chambers 11a and 11b of this apparatus are both provided with a sputter cathode for both main surfaces of the substrate 2, and can form films simultaneously from both surfaces of the substrate 2. Further, the substrate holder transport means (not shown) can transport the substrate holder in the left-right direction on the paper surface. In this example, the film forming chambers 11a and 11b are arranged in a line in the horizontal direction.
- the film forming apparatus of the present invention is not limited to the line-shaped film forming apparatus. For example, a form in which a plurality of film forming chambers surround a chamber located in the center may be employed.
- a film forming chamber 11a for forming a bias voltage non-applied film which is positioned in front of a film forming chamber 11b for performing a bias voltage applying film formation, pushes up the auxiliary substrate support claw 6 from below and moves up, or an auxiliary substrate.
- Drive means 14 for lowering the support claw 6 is provided.
- the operation of the driving unit 14 is controlled by the control unit 100. Under the control of the control means 100, the driving means 14 pushes up the auxiliary substrate support claw 6 to contact the substrate 2 to support the substrate 2 on the auxiliary substrate support claw 6, and at the same time from the substrate 2 to the substrate support claws 5, 5. Can be removed.
- the driving means 14 pushes up the auxiliary substrate support claws 6, and the driving means 14 is released under the control of the control means 100 (in the direction of the arrow). ), The auxiliary substrate support claw 6 also moves downward, and the auxiliary substrate support claw 6 is detached from the substrate 2.
- FIG. 3 only one film forming chamber for performing bias voltage non-application film formation provided with a driving means 14 is shown in front of the chamber 11b for performing bias voltage application film formation. The invention is not limited to this. In the case where the bias voltage non-application film formation is performed a plurality of times before the bias voltage application film formation, the bias voltage non-application film including the driving unit 14 is provided in the front stage of the chamber 11b in which the bias voltage application film formation is performed. A plurality of film forming chambers are arranged.
- FIG. 11A, B to 13A, B are perspective views of the main body 1 of the substrate holder.
- the driving unit 14 is lowered by the control unit 100, the auxiliary substrate support claw 6 and the substrate 2 are not in contact with each other, and the substrate 2 is supported by the substrate support claw 5 and the substrate support claw 3.
- the drive means 14 is raised by the control means 100, the auxiliary substrate support claw 6 and the substrate 2 are in contact, the substrate support claw 5 is not in contact with the substrate, the auxiliary substrate support claw 6 and the substrate support claw 3 are Thus, the substrate 2 is supported.
- FIG. 12A is a diagram illustrating a state in which the driving unit 14 is lifted to come into contact with the auxiliary board support claw 6 and the auxiliary board support claw 6 is raised and brought into contact with the board 2 in FIG. 12B is an enlarged view showing a state where the auxiliary substrate support claw 6 is in contact with the substrate and the substrate support claw 5 is not in contact with the substrate 2.
- FIG. 13A the driving means 14 is lowered in FIG. 11A, the auxiliary substrate support claw 6 is not in contact with the substrate 2, the substrate support claw 5 is in contact with the substrate 2, and the substrate support claw 3 and the substrate support claw 5 It is a figure which shows the state which supported the board
- the film forming chamber 11b for performing bias voltage application film formation includes, for example, a bias voltage applying unit 16 for applying a bias voltage to the main body 1 from below and a power source 15 for supplying a voltage to the bias voltage applying unit 16.
- the bias voltage application means 16 has an electrode that can be raised or lowered (hereinafter, the “electrode of the bias voltage application means 16” is also simply referred to as “bias voltage application means 16”).
- the electrode of the bias voltage applying means 16 rises and comes into contact with the main body 1, a bias voltage is applied from the bias voltage applying means 16 to at least one of the substrate support claws 3, 3, 5, 5 through the main body 1 of the substrate holder. Is done.
- the control means 100 is connected to the power supply 15 and the bias voltage application means 16 and can control ON / OFF control of the power supply 15 and the rise or fall of the electrodes of the bias voltage application means 16.
- FIG. 3 shows a state in which the electrode of the bias voltage applying means 16 is raised and brought into contact with the main body 1 in the film forming chamber 11b of FIG. From this state, the electrode of the bias voltage applying means 16 is lowered in the direction of the arrow under the control of the control means 100, so that the electrode of the bias voltage applying means 16 is not in contact with the main body 1, and the bias voltage is applied to the main body 1. Can not be applied.
- FIG. 14A and 14B are perspective views when the bias voltage applying means 16 is arranged in a direction perpendicular to the main body 1 of the substrate holder.
- FIG. 14A shows a state in which the electrode of the bias voltage applying unit 16 is lowered and is not in contact with the main body 1 and no bias voltage is applied to the substrate 2.
- FIG. 14B shows a state in which the electrode of the bias voltage application unit 16 controlled by the control unit 100 is raised, is in contact with the main body 1, and a bias is applied to the substrate 2.
- FIG. 17 is a perspective view of the configuration example of FIG. 3 in which the driving means 14 and the bias voltage applying means 16 are arranged in a direction perpendicular to the main body 1 of the substrate holder.
- the driving means 14 is raised by the control means 100, the auxiliary substrate support claw 6 comes into contact with the substrate 2, and when the substrate 2 is raised, the substrate support claw 5 is not in contact with the substrate 2.
- the substrate 2 is supported by the substrate support claws 3 and the auxiliary substrate support claws 6.
- the bias voltage supply means 16 is raised by the control means 100 and comes into contact with the main body 1 of the substrate holder, a bias is applied to the substrate 2.
- FIG. 17B since there is no driving means 14, the auxiliary substrate support claw 6 is lowered and separated from the substrate 2, and the auxiliary substrate support claw 6 is not in contact with the substrate 2, and the substrate support claw 3, the substrate support claw 5, The substrate 2 is supported.
- FIG. 8 is a block diagram showing a functional configuration of the control means 100.
- a film forming apparatus 800 (including a first film forming chamber 11a and a second film forming chamber 11b) is connected to the control means 100.
- the control means 100 receives input signals from the first film formation chamber 11a and the second film formation chamber 11b.
- the control means 100 operates a drive program 14, a power supply 15, a bias voltage application means 16, and a control program programmed to control a process executed in a chamber constituting the film forming apparatus 800, and issues an operation instruction. Output to the membrane device 800.
- the control means 100 has the configuration of the computer (information processing apparatus) shown in FIG.
- the control unit 100 receives an input signal 802 from the film formation apparatus 800, outputs a computer-readable storage medium 803 having a program and data, a processor 804, and an operation instruction including the control signal to the film formation apparatus 800. Part 805.
- the input unit 802 can accept an input of a command from another external apparatus connected via a network, for example.
- the control means 100 makes the auxiliary substrate support claw 6 (second support member) and the insulating substrate 2 in contact with each other.
- the drive means 14 is moved so that the control means 100 brings the bias voltage application support member (substrate support claw 5) into a non-contact state with the insulating substrate 2.
- the control means 100 supports the substrate 2 with the substrate support claw 3 (first support member) and the auxiliary substrate support claw 6 (second support member) other than the bias voltage application support member (substrate support claw 5). Control is performed so that the base layer, which is a conductive film, is sputtered on the substrate.
- the auxiliary substrate support claw 6 (second support member) is in the second film formation chamber (11b in FIG. 3). Since there is no drive means 14 that moves the substrate up and down, the auxiliary substrate support claw 6 (second support member) moves so as to be in a non-contact state with the substrate 2 and is in a non-contact state with the substrate 2.
- the control unit 100 moves the electrode of the bias applying unit 16 so as to be in contact with the main body 1 of the substrate holder, and the insulating substrate with the conductive film attached thereto by the substrate support claw 3 (first support member). Holding and controlling the bias voltage application support member (substrate support claw 5) to form a thin film on the substrate while applying a bias to the insulating substrate with the conductive film.
- FIG. 9 is a perspective view showing a modification of FIG.
- the bias voltage applying means 16 is provided below the main body 1, and the contact of the bias voltage applying means 16 moves up and down.
- the gist of the present invention is not limited to the configuration of FIG. 3.
- the bias voltage applying means 16 is arranged in parallel with the main body 1, and the electrodes are moved in a horizontal manner. It is also possible to apply a bias voltage to the main body 1.
- FIG. 10A is a diagram showing a configuration example of the bias voltage applying means 16 arranged with the electrodes movable in the vertical direction and the bias voltage applying means 16 arranged with the electrodes movable in the horizontal direction. is there.
- FIG. 10A shows a state where the electrodes of each bias voltage applying means 16 are not in contact with the main body 1 of the substrate holder.
- the control means 100 controls the electrodes of each bias voltage applying means 16 to come into contact with the main body 1 of the substrate holder, the result is as shown in FIG. 10B.
- FIG. 15A and 15B are perspective views when the bias voltage applying means 16 is disposed in the horizontal direction with respect to the main body 1 of the substrate holder.
- the bias voltage applying means 16 provided in the horizontal direction is controlled by the control means 100 and the electrode moves to the right in the horizontal direction (the direction of the arrow 1501) in the figure, the electrode of the bias voltage applying means 16 The body 1 is not in contact with the substrate 2 and no bias voltage is applied to the substrate 2 (FIG. 15A).
- the bias voltage applying means 16 provided in the horizontal direction is controlled by the control means 100 and the electrode moves to the left in the horizontal direction (in the direction of the arrow 1502) in the drawing, the electrode of the bias voltage applying means 16 becomes the substrate holder. Then, a bias voltage is applied to the substrate 2 (FIG. 15B).
- FIG. 16 is a diagram illustrating a configuration example in which the driving unit 14 using the motor driving mechanism and the bias voltage applying unit 16 are arranged in the horizontal direction with respect to the main body 1 of the substrate holder.
- the driving amount of the motor is controlled by the control means 100, the driving means 14 rises and comes into contact with the auxiliary substrate support claw 6, and as the driving means 14 rises, the auxiliary substrate support claw 6 rises and comes into contact with the substrate 2.
- the substrate 2 is supported by the substrate support claw 3 and the auxiliary substrate support claw 6. In this state, the substrate support claws 5 are not in contact with the substrate 2.
- control means 100 moves the electrodes of the bias voltage applying means 16 in the horizontal direction, it comes into contact with the main body 1 of the substrate holder and a bias voltage is applied to the substrate 2.
- the auxiliary substrate support claw 6 is not in contact with the substrate 2, and the substrate 2 is supported by the substrate support claw 3 and the substrate support claw 5.
- the film forming method of the present invention will be described by taking the case of using the apparatus of FIG. 3 as an example.
- the film forming method of the present invention is a method for continuously forming a plurality of thin layers on both main surfaces of an insulating substrate.
- a conductive first layer made of metal or the like is formed on the insulating substrate 2 in the film forming chamber 11a by non-bias voltage forming (first film forming step).
- the auxiliary substrate support claws 6 are pushed up by the driving means 14 to come into contact with the substrate 2, and at the same time, the substrate support claws 5, 5 are detached from the substrate 2. , 3 support the substrate 2.
- the substrate support claw 5 that functions as a bias voltage application support member is not in contact with the insulating substrate. Therefore, before the substrate supporting claws 5 and 5 are held in a non-contact state, a conductive first layer made of metal or the like is also formed at a position where the substrate supporting claws 5 and 5 are in contact with the substrate 2.
- the driving means 14 of the auxiliary substrate support claw 6 is released, and the auxiliary substrate support claw 6 is moved downward by the restoring force of the leaf spring 7.
- the auxiliary substrate support claws 6 are detached from the substrate 2, and the substrate support claws 5 and 5 support the substrate 2 that has come down downward.
- the substrate support claws 5 and 5 are in contact with the first layer.
- the substrate 2 on which the first layer has been formed is transferred to the film formation chamber 11b together with the substrate holder, the electrode of the bias voltage applying means 16 is brought into contact with the main body 1 of the substrate holder, and a bias voltage is applied to the main body 1. Since the substrate 2 is supported by the substrate support claws 3, 3, 5 and 5, a bias voltage is applied to the first layer via at least one of the main body 1 and the substrate support claws 3, 3, 5, and 5. Is done. By performing film formation in this state, a new thin layer (second layer) is formed on the first layer by bias voltage application film formation (second film formation step).
- the first layer is also formed in the region where the substrate support claws 5 and 5 are in contact with the substrate 2.
- the contact area between the substrate support claws 5 and 5 and the first layer is wide, and an efficient voltage application can be performed.
- the bias voltage application film forming step is repeated a plurality of times, it is not necessary to separate the substrate support claws 5 and 5 from the substrate 2 for each step, and the substrate 2 of the substrate support claws 5 and 5 is removed. Generation of particles due to detachment from is minimized.
- 4 is an insulating member.
- the second substrate holder uses the substrate support claws 5 and 5 as bias voltage application substrate support claws (bias voltage application support member), and the substrate support claws 3 and 3 other than the bias voltage application substrate support claws have bias voltage applied thereto.
- a substrate supporting claw for non-bias voltage application bias voltage non-application support member
- the substrate support claws 5, 5 are made of a conductive material and are electrically connected to the main body 1. Is electrically insulated.
- the conductive substrate support claws 3 and 3 are attached to the main body 1 via the insulating member 4. However, by configuring the substrate support claws 3 and 3 with an insulating material, It may be attached directly to 1.
- the second substrate holder even when a bias voltage is applied to the main body 1 from an external bias voltage applying means, no bias voltage is applied to the substrate support claws 3 and 3, so that the substrate support is applied when the bias voltage is applied. The occurrence of abnormal discharge at the part can be reduced.
- the drive means 14 is moved up and down under the control of the control means 100 so that the auxiliary board support claws 6 are brought into contact / non-contact with the board 2, whereby the board support claws 5, 5 are brought into contact with the board 2.
- the substrate 2 is supported by the substrate support claws 3, 3 and the auxiliary substrate support claws 6 (first state), and is supported by the substrate support claws 3, 3, 5, 5 (FIG. 4).
- the second state shown in FIG. In other words, the substrate support claws 3, 3 for applying no bias voltage always contact the substrate 2 to support the substrate 2, and the substrate support claws for applying the bias voltage according to whether the bias voltage is applied or not applied.
- Either 5, 5 or the auxiliary substrate support claw 6 is added to support the substrate 2. Switching between the first state and the second state is performed under the control of the control means 100.
- the number of substrate support claws is the same as that of the first substrate holder described above with reference to FIGS. That is, at least one bias voltage application and no bias voltage application are required, but the total number is preferably smaller if the substrate 2 can be stably held because the shadow area due to the nail is reduced.
- the substrate supporting claws 3 and 3 may be one vertically above the substrate 2.
- the substrate support claws 5 and 5 only one of them may be used for applying a bias voltage, and the other may be configured similarly to the substrate support claws 3 and 3 for applying no bias voltage.
- the film forming apparatus using the second substrate holder shown in FIG. 4 is basically the same as the film forming apparatus using the first substrate holder, and the apparatus illustrated in FIG. 3 is preferably used.
- the auxiliary substrate support claw 6 of the second substrate holder is pushed up by the driving means 14 provided in the film forming chamber 11a of FIG. 3 so that the substrate 2 is supported by the auxiliary substrate support claw 6 and at the same time the substrate 2 supports the substrate. Remove the nails 5 and 5.
- the bias voltage of the bias voltage applying unit 16 is applied to the substrate support claws 5, 5 through the main body 1 by bringing the electrode of the bias voltage applying unit 16 into contact with the main body 1.
- the film forming method using the second substrate holder is the only one that the bias voltage is not applied from the substrate support claws 3 and 3 that are electrically insulated from the main body 1 at the time of bias voltage application film formation. This is different from the film forming method using one substrate holder.
- the auxiliary substrate support claw 6 is made of an insulating material or is electrically insulated from the main body 1 so that the substrate 2 is supported during film formation with no bias voltage applied.
- the substrate support claws 3, 3 and 6 can all be electrically insulated from the main body 1. Therefore, even when a bias voltage is applied to the main body 1, it is possible to form a film on the substrate 2 without applying a bias voltage. Even in a chamber, film formation without applying a bias voltage can be performed.
- the present invention is particularly preferably used for hard disk manufacturing.
- a hard disk at least an underlayer, a magnetic layer, and a protective layer are formed on both main surfaces of an insulating substrate.
- the underlayer is first formed by the above-described film formation without applying a bias voltage. Then, a magnetic layer and a protective layer may be formed by applying a bias voltage.
- the case of film formation by sputtering has been taken up, but it can also be applied to a bias application process such as CVD or etching. It is also possible to process a conductive substrate with the holder according to the invention.
- the substrate holder of the present invention, the film forming method using the same, and the film forming apparatus are preferably used in addition to hard disk manufacturing.
Abstract
Description
開口部を有する導電性の基板ホルダー本体と、
前記開口部の内周から当該開口部内に向けて突出して形成されており、前記絶縁性基板の一端部を支持するための挟持部材を備える第1の支持部材と、
前記絶縁性基板の他の端部を支持するための狭持部材を備え、前記開口部内に向けて突出し、または当該開口部内から退避するように移動可能な第2の支持部材と、を有し、
前記第1の支持部材のうち少なくとも1つは前記絶縁性基板にバイアス電圧を印加することが可能なバイアス電圧印加支持部材であり、
前記第2の支持部材の狭持部材により前記絶縁性基板を支持する時には、前記第2の支持部材は、前記バイアス電圧印加支持部材の狭持部材が前記絶縁性基板から離れるように、前記開口部内に向けて突出移動し、
前記バイアス電圧印加支持部材の狭持部材により前記絶縁性基板を支持する時には、前記第2の支持部材は、前記絶縁性基板の前記他の端部が前記第2の支持部材の狭持部材により支持されている位置から前記バイアス電圧印加支持部材の挟持部材により前記絶縁性基板が支持される位置まで退避移動することを特徴とする。
前記絶縁性基板に電圧を印加しないで前記絶縁性基板に導電性膜を成膜する第1の成膜チャンバーと、
前記絶縁性基板に電圧を印加しながら前記絶縁性基板に薄膜を成膜する第2の成膜チャンバーと、
開口部を有する導電性の基板ホルダー本体と、前記開口部の内周から当該開口部内に向けて突出して形成されており、前記絶縁性基板の一端部を支持するための挟持部材を備え且つ前記絶縁性基板にバイアス電圧を印加可能なバイアス電圧印可支持部材を含む第1の支持部材と、前記絶縁性基板の他の端部を支持するための狭持部材を備え、前記開口部内に向けて突出し、または当該開口部内から退避するように移動可能な第2の支持部材と、を有する基板ホルダーと、
前記第1の成膜チャンバーに設けられ、前記第1の支持部材の前記狭持部材が前記基板から離れるように、前記第2の支持部材の狭持部材により前記基板を支持しながら前記第2の支持部材を移動させ、または、前記絶縁性基板の前記他の端部が前記第2の支持部材の狭持部材により支持されている位置から前記第1の支持部材の挟持部材により前記絶縁性基板が支持される位置まで前記第2の支持部材を移動させるための駆動手段と、
前記第2の成膜チャンバーに設けられ、前記第1の支持部材へ電圧を印加する電圧印加手段と、
前記駆動手段による移動と、前記電圧印加手段による前記電圧の印加と、前記第1の成膜チャンバーの動作と、前記第2の成膜チャンバーの動作と、を制御する制御手段と、を備え、
前記第1の支持部材の前記挟持部材が前記基板から離れた位置で、前記制御手段により制御された前記第1の成膜チャンバーは前記基板の上に導電性膜を成膜し、
前記制御手段は、前記駆動手段を制御して、前記導電性膜が成膜された前記基板を前記第1の支持部材の前記挟持部材により支持される位置まで前記第2の支持部材を下降させ、
前記制御手段は、前記第1の支持部材に前記電圧が印加される様に前記電圧印加手段を制御し、前記電圧を印加しながら前記第2の成膜チャンバーの動作を制御して前記導電性膜が成膜された絶縁性基板に薄膜を成膜することを特徴とする。
開口部を有する導電性の基板ホルダー本体と、前記開口部の内周から当該開口部内に向けて突出して形成されており、前記絶縁性基板の一端部を支持するための挟持部材を備え且つ前記絶縁性基板にバイアス電圧を印加可能なバイアス電圧印可支持部材を含む第1の支持部材と、前記絶縁性基板の他の端部を支持するための狭持部材を備え、前記開口部内に向けて突出し、または当該開口部内から退避するように移動可能な第2の支持部材と、を有する基板ホルダーに前記絶縁性基板を載置する工程と、
前記基板ホルダーを第1の成膜チャンバー内に搬送する工程と、
前記絶縁性基板を前記第2の支持部材と前記バイアス電圧印可支持部材以外の第1の支持部材とで支持しながら、前記絶縁性基板上に導電性膜である下地層を成膜する工程と、
前記基板ホルダーを第2の成膜チャンバーに搬送する工程と、
前記絶縁性基板を第1の支持部材で支持し、前記バイアス電圧印可支持部材から前記絶縁性基板にバイアス電圧を印可しながら前記絶縁性基板上に薄膜を形成する工程と、
を有することを特徴とする。
開口部を有する導電性の基板ホルダー本体と、前記開口部の内周から当該開口部内に向けて突出して形成されており、前記絶縁性基板の一端部を支持するための挟持部材を備え且つ前記絶縁性基板にバイアス電圧を印加可能なバイアス電圧印可支持部材を含む第1の支持部材と、前記絶縁性基板の他の端部を支持するための狭持部材を備え、前記開口部内に向けて突出し、または当該開口部内から退避するように移動可能な第2の支持部材と、を有する基板ホルダーに前記絶縁性基板を載置する工程と、
前記基板ホルダーを第1の成膜チャンバー内に搬送する工程と、
前記絶縁性基板を前記第2の支持部材と前記バイアス電圧印可支持部材以外の第1の支持部材とで支持しながら、前記絶縁性基板上に導電性膜である下地層を成膜する工程と、
前記基板ホルダーを第2の成膜チャンバーに搬送する工程と、
前記絶縁性基板を第1の支持部材で支持し、前記バイアス電圧印可支持部材から前記絶縁性基板にバイアス電圧を印可しながら前記絶縁性基板上に薄膜を形成する工程と、
を有することを特徴とする。
Claims (13)
- 絶縁性基板を支持するための基板ホルダーであって、
開口部を有する導電性の基板ホルダー本体と、
前記開口部の内周から当該開口部内に向けて突出して形成されており、前記絶縁性基板の一端部を支持するための挟持部材を備える第1の支持部材と、
前記絶縁性基板の他の端部を支持するための狭持部材を備え、前記開口部内に向けて突出し、または当該開口部内から退避するように移動可能な第2の支持部材と、を有し、
前記第1の支持部材のうち少なくとも1つは前記絶縁性基板にバイアス電圧を印加することが可能なバイアス電圧印加支持部材であり、
前記第2の支持部材の狭持部材により前記絶縁性基板を支持する時には、前記第2の支持部材は、前記バイアス電圧印加支持部材の狭持部材が前記絶縁性基板から離れるように、前記開口部内に向けて突出移動し、
前記バイアス電圧印加支持部材の狭持部材により前記絶縁性基板を支持する時には、前記第2の支持部材は、前記絶縁性基板の前記他の端部が前記第2の支持部材の狭持部材により支持されている位置から前記バイアス電圧印加支持部材の挟持部材により前記絶縁性基板が支持される位置まで退避移動することを特徴とする基板ホルダー。 - 前記第2の支持部材は、絶縁性の素材で構成されるか、或いは前記基板ホルダー本体とは電気的に絶縁されていることを特徴とする請求項1に記載の基板ホルダー。
- 前記基板ホルダー本体の前記開口部内において、前記絶縁性基板は、前記第1の支持部材、または前記第1の支持部材と前記第2の支持部材とにより、絶縁性基板面の法線方向に対して垂直な方向に支持されることを特徴とする請求項1に記載の基板ホルダー。
- 前記第2の支持部材は、当該第2の支持部材の突出移動に応じて押圧され、当該第2の支持部材の退避移動に応じて復元する弾性部材を有することを特徴とする請求項1に記載の基板ホルダー。
- 絶縁性基板を支持する複数の基板支持爪と導電性の本体とを有し、該本体が外部のバイアス電圧印加手段よりバイアス電圧印加可能な基板ホルダーであって、
前記複数の基板支持爪以外に、前記絶縁性基板に対して接触する状態または非接触の状態に移動可能な補助基板支持爪を有し、
前記複数の基板支持爪の少なくとも1つが前記本体に電気的に接続された導電性のバイアス電圧印加用基板支持爪であり、該バイアス電圧印加用基板支持爪以外の基板支持爪は絶縁性の素材で構成されるか、或いは本体とは電気的に絶縁されたバイアス電圧非印加用基板支持爪であり、
前記補助基板支持爪が前記絶縁性基板に接触した際には、前記バイアス電圧印加用基板支持爪と前記絶縁性基板とは非接触となり、前記バイアス電圧非印加用基板支持爪と前記補助基板支持爪とで前記絶縁性基板が保持され、
前記補助基板支持爪が前記絶縁性基板に非接触の際には、前記基板支持爪が全て前記絶縁性基板と接触して当該絶縁性基板を保持し、前記外部のバイアス電圧印加手段より前記本体を介して前記バイアス電圧印加用基板支持爪にバイアス電圧が印加されることを特徴とする基板ホルダー。 - 少なくとも1工程のバイアス電圧印加成膜工程と、少なくとも1工程のバイアス電圧非印加成膜工程とを有する成膜方法であって、
開口部を有する導電性の基板ホルダー本体と、前記開口部の内周から当該開口部内に向けて突出して形成されており、前記絶縁性基板の一端部を支持するための挟持部材を備える第1の支持部材と、前記絶縁性基板の他の端部を支持するための狭持部材を備え、前記開口部内に向けて突出し、または当該開口部内から退避するように移動可能な第2の支持部材と、を備える基板ホルダーに絶縁性基板を保持する保持工程と、
バイアス電圧を印加しないで成膜を行うバイアス電圧非印加成膜工程においては、前記第2の支持部材の狭持部材により前記絶縁性基板を支持するために、前記第1の支持部材を構成し前記絶縁性基板にバイアス電圧を印加することが可能な少なくとも1つのバイアス電圧印加支持部材の狭持部材が前記絶縁性基板から離れるように、前記第2の支持部材を前記開口部内に向けて突出移動させて、前記絶縁性基板に成膜を行う第1の成膜工程と、
バイアス電圧を印加して成膜を行うバイアス電圧印加成膜工程においては、前記バイアス電圧印加支持部材の狭持部材により前記絶縁性基板を支持するために、前記絶縁性基板が前記第2の支持部材の狭持部材により支持されている位置から前記バイアス電圧印加支持部材の挟持部材により前記絶縁性基板が支持される位置まで前記第2の支持部材を退避移動させて、前記絶縁性基板に成膜を行う第2の成膜工程と、
を有することを特徴とする成膜方法。 - 少なくとも1工程のバイアス電圧印加成膜工程と、少なくとも1工程のバイアス電圧非印加成膜工程とを有する成膜方法であって、
請求項5に記載の基板ホルダーに絶縁性基板を保持する保持工程と、
バイアス電圧を印加しないで成膜を行うバイアス電圧非印加成膜工程においては、基板ホルダーの補助基板支持爪を前記絶縁性基板に接触させ、前記バイアス電圧印加用基板支持爪を基板に非接触とし、バイアス電圧非印加用基板支持爪と補助基板支持爪とで基板を支持しながら前記絶縁性基板に成膜を行う第1の成膜工程と、
バイアス電圧を印加して成膜を行うバイアス電圧印加成膜工程においては、基板ホルダーの補助基板支持爪を基板に非接触とし、前記基板支持爪の全てを前記絶縁性基板に接触させて該絶縁性基板を保持しながら、外部のバイアス電圧印加手段より本体を介してバイアス電圧印加用基板支持爪にバイアス電圧を印加しながら前記絶縁性基板に成膜を行う第2の成膜工程と、
を有することを特徴とする成膜方法。 - 絶縁性基板の両主面に同時に、少なくとも下地層、磁性層、保護層を連続的に成膜するハードディスクの製造方法であって、
請求項6または7に記載の成膜方法における前記第1の成膜工程により、前記下地層をバイアス電圧を印加しないで成膜する工程と、
請求項6または8に記載の成膜方法における前記第2の成膜工程により、前記磁性層をバイアス電圧を印加して成膜する工程と、を有することを特徴とするハードディスクの製造方法。 - 絶縁性基板の両主面に同時に、複数層の薄膜を連続的に成膜する成膜装置であって、
複数の成膜チャンバーと、
請求項5に記載の基板ホルダーに絶縁性基板を保持して前記複数の成膜チャンバー間を搬送する搬送手段と、を備え、
前記複数の成膜チャンバーのうち、バイアス電圧を印加しないで成膜を行う成膜チャンバーは、前記基板ホルダーの補助基板支持爪を前記絶縁性基板に接触させるために、前記補助基板支持爪を移動させる駆動手段を備え、
前記複数の成膜チャンバーのうち、前記バイアス電圧を印加して成膜を行うチャンバーは、前記基板ホルダーの本体に接触してバイアス電圧を印加するバイアス電圧印加手段を備えることを特徴とする成膜装置。 - 絶縁性基板の両主面に同時に、少なくとも下地層、磁性層、保護層を連続的に成膜するハードディスクの製造方法において、
バイアス電圧を印加しないで成膜を行う成膜チャンバーで前記下地層を成膜し、
バイアス電圧を印加して成膜を行うチャンバーで前記磁性層を成膜することを特徴とする請求項9に記載の成膜装置。 - 絶縁性基板の両面に同時に、複数層の薄膜を連続的に成膜する成膜装置であって、
前記絶縁性基板に電圧を印加しないで前記絶縁性基板に導電性膜を成膜する第1の成膜チャンバーと、
前記絶縁性基板に電圧を印加しながら前記絶縁性基板に薄膜を成膜する第2の成膜チャンバーと、
開口部を有する導電性の基板ホルダー本体と、前記開口部の内周から当該開口部内に向けて突出して形成されており、前記絶縁性基板の一端部を支持するための挟持部材を備え且つ前記絶縁性基板にバイアス電圧を印加可能なバイアス電圧印可支持部材を含む第1の支持部材と、前記絶縁性基板の他の端部を支持するための狭持部材を備え、前記開口部内に向けて突出し、または当該開口部内から退避するように移動可能な第2の支持部材と、を有する基板ホルダーと、
前記第1の成膜チャンバーに設けられ、前記第1の支持部材の前記狭持部材が前記基板から離れるように、前記第2の支持部材の狭持部材により前記基板を支持しながら前記第2の支持部材を移動させ、または、前記絶縁性基板の前記他の端部が前記第2の支持部材の狭持部材により支持されている位置から前記第1の支持部材の挟持部材により前記絶縁性基板が支持される位置まで前記第2の支持部材を移動させるための駆動手段と、
前記第2の成膜チャンバーに設けられ、前記第1の支持部材へ電圧を印加する電圧印加手段と、
前記駆動手段による移動と、前記電圧印加手段による前記電圧の印加と、前記第1の成膜チャンバーの動作と、前記第2の成膜チャンバーの動作と、を制御する制御手段と、を備え、
前記第1の支持部材の前記挟持部材が前記基板から離れた位置で、前記制御手段により制御された前記第1の成膜チャンバーは前記基板の上に導電性膜を成膜し、
前記制御手段は、前記駆動手段を制御して、前記導電性膜が成膜された前記基板を前記第1の支持部材の前記挟持部材により支持される位置まで前記第2の支持部材を下降させ、
前記制御手段は、前記第1の支持部材に前記電圧が印加される様に前記電圧印加手段を制御し、前記電圧を印加しながら前記第2の成膜チャンバーの動作を制御して前記導電性膜が成膜された絶縁性基板に薄膜を成膜することを特徴とする成膜装置。 - 真空処理室内で、基板支持部材により絶縁性基板を支持し、該絶縁性基板の表面に複数層の薄膜を順次成膜する方法のうち、前記複数層の薄膜中、少なくとも一層がバイアススパッタリング法で成膜される成膜方法であって、
開口部を有する導電性の基板ホルダー本体と、前記開口部の内周から当該開口部内に向けて突出して形成されており、前記絶縁性基板の一端部を支持するための挟持部材を備え且つ前記絶縁性基板にバイアス電圧を印加可能なバイアス電圧印可支持部材を含む第1の支持部材と、前記絶縁性基板の他の端部を支持するための狭持部材を備え、前記開口部内に向けて突出し、または当該開口部内から退避するように移動可能な第2の支持部材と、を有する基板ホルダーに前記絶縁性基板を載置する工程と、
前記基板ホルダーを第1の成膜チャンバー内に搬送する工程と、
前記絶縁性基板を前記第2の支持部材と前記バイアス電圧印可支持部材以外の第1の支持部材とで支持しながら、前記絶縁性基板上に導電性膜である下地層を成膜する工程と、
前記基板ホルダーを第2の成膜チャンバーに搬送する工程と、
前記絶縁性基板を第1の支持部材で支持し、前記バイアス電圧印可支持部材から前記絶縁性基板にバイアス電圧を印可しながら前記絶縁性基板上に薄膜を形成する工程と、
を有することを特徴とする成膜方法。 - 真空処理室内で、基板支持部材により絶縁性基板を支持し、該絶縁性基板の表面に複数層の薄膜を順次成膜する方法のうち、前記複数層の薄膜中、少なくとも一層がバイアススパッタリング法で成膜される成膜方法をコンピュータに実行させるプログラムであって、当該成膜方法が、
開口部を有する導電性の基板ホルダー本体と、前記開口部の内周から当該開口部内に向けて突出して形成されており、前記絶縁性基板の一端部を支持するための挟持部材を備え且つ前記絶縁性基板にバイアス電圧を印加可能なバイアス電圧印可支持部材を含む第1の支持部材と、前記絶縁性基板の他の端部を支持するための狭持部材を備え、前記開口部内に向けて突出し、または当該開口部内から退避するように移動可能な第2の支持部材と、を有する基板ホルダーに前記絶縁性基板を載置する工程と、
前記基板ホルダーを第1の成膜チャンバー内に搬送する工程と、
前記絶縁性基板を前記第2の支持部材と前記バイアス電圧印可支持部材以外の第1の支持部材とで支持しながら、前記絶縁性基板上に導電性膜である下地層を成膜する工程と、
前記基板ホルダーを第2の成膜チャンバーに搬送する工程と、
前記絶縁性基板を第1の支持部材で支持し、前記バイアス電圧印可支持部材から前記絶縁性基板にバイアス電圧を印可しながら前記絶縁性基板上に薄膜を形成する工程と、
を有することを特徴とするプログラム。
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CN2008801139921A CN101842513B (zh) | 2007-12-26 | 2008-12-24 | 基板保持器、使用基板保持器的成膜方法、硬盘制造方法、成膜设备及程序 |
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US8517364B1 (en) * | 2010-10-07 | 2013-08-27 | WD Media, LLC | Disk holder with replaceable inserts to retain springs |
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