WO2009078299A1 - 固体撮像装置およびその製造方法 - Google Patents

固体撮像装置およびその製造方法 Download PDF

Info

Publication number
WO2009078299A1
WO2009078299A1 PCT/JP2008/072261 JP2008072261W WO2009078299A1 WO 2009078299 A1 WO2009078299 A1 WO 2009078299A1 JP 2008072261 W JP2008072261 W JP 2008072261W WO 2009078299 A1 WO2009078299 A1 WO 2009078299A1
Authority
WO
WIPO (PCT)
Prior art keywords
forming
compound semiconductor
solid
imaging device
state imaging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/072261
Other languages
English (en)
French (fr)
Inventor
Osamu Matsushima
Kenichi Miyazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to US12/808,757 priority Critical patent/US8362527B2/en
Priority to JP2009546223A priority patent/JPWO2009078299A1/ja
Publication of WO2009078299A1 publication Critical patent/WO2009078299A1/ja
Anticipated expiration legal-status Critical
Priority to US13/717,248 priority patent/US8486750B2/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/251—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising zinc oxide [ZnO]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Solid State Image Pick-Up Elements (AREA)

Abstract

　可視光から近赤外光までの広い波長域にわたって高い感度を有し、暗電流が低減され、かつ平坦化構造の固体撮像装置およびその製造方法を提供する。 　基板(１０)上に回路部(３０)を形成する工程と、回路部(３０)上に下部電極層(２５)を形成する工程と、下部電極層(２５)をパターニングして画素毎に分離する工程と、素子領域全面にカルコパイライト構造の化合物半導体薄膜(２４)を形成する工程と、化合物半導体薄膜(２４)上にレジスト層(２７)を塗布後、分離された下地の下部電極層(２５)に合わせて、画素毎にパターニングする工程と、素子領域全面にイオン注入を実施して、化合物半導体薄膜(２４)に素子分離領域(３４)を形成する工程と、レジスト層(２７)を剥離し、画素毎に素子分離領域(３４)で分離された化合物半導体薄膜(２４)の表面を露出する工程と、素子領域全面に透明電極層(２６)を平坦化形成する工程とを有する。
PCT/JP2008/072261 2007-12-19 2008-12-08 固体撮像装置およびその製造方法 Ceased WO2009078299A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/808,757 US8362527B2 (en) 2007-12-19 2008-12-08 Solid-state imaging device and fabrication method thereof
JP2009546223A JPWO2009078299A1 (ja) 2007-12-19 2008-12-08 固体撮像装置およびその製造方法
US13/717,248 US8486750B2 (en) 2007-12-19 2012-12-17 Solid-state imaging device and fabrication method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007327423 2007-12-19
JP2007-327423 2007-12-19

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/808,757 A-371-Of-International US8362527B2 (en) 2007-12-19 2008-12-08 Solid-state imaging device and fabrication method thereof
US13/717,248 Division US8486750B2 (en) 2007-12-19 2012-12-17 Solid-state imaging device and fabrication method thereof

Publications (1)

Publication Number Publication Date
WO2009078299A1 true WO2009078299A1 (ja) 2009-06-25

Family

ID=40795415

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/072261 Ceased WO2009078299A1 (ja) 2007-12-19 2008-12-08 固体撮像装置およびその製造方法

Country Status (3)

Country Link
US (2) US8362527B2 (ja)
JP (1) JPWO2009078299A1 (ja)
WO (1) WO2009078299A1 (ja)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011119353A (ja) * 2009-12-01 2011-06-16 Fujifilm Corp 光センサー、光センサーアレイ、光センサーの駆動方法、及び光センサーアレイの駆動方法
JP2011199057A (ja) * 2010-03-19 2011-10-06 Sony Corp 固体撮像装置、および、その製造方法、電子機器
JP2012004443A (ja) * 2010-06-18 2012-01-05 Sony Corp 固体撮像装置、電子機器
JP2014060380A (ja) * 2012-06-14 2014-04-03 Rohm Co Ltd 光電変換装置
US9391103B2 (en) 2013-08-15 2016-07-12 Sony Corporation Image pickup element and image pickup device
JP2016134576A (ja) * 2015-01-22 2016-07-25 日本放送協会 固体撮像素子およびその製造方法
JP2016134577A (ja) * 2015-01-22 2016-07-25 日本放送協会 固体撮像素子の製造方法
JP2017055401A (ja) * 2015-09-07 2017-03-16 株式会社半導体エネルギー研究所 撮像装置およびその動作方法、モジュールならびに電子機器
US9893101B2 (en) 2012-01-23 2018-02-13 Sony Semiconductor Solutions Corporation Solid-state image pickup unit, method of manufacturing solid-state image pickup unit, and electronic apparatus

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5609119B2 (ja) * 2009-01-21 2014-10-22 ソニー株式会社 固体撮像装置、その製造方法および撮像装置
JP5866768B2 (ja) 2011-02-16 2016-02-17 セイコーエプソン株式会社 光電変換装置、電子機器

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0430576A (ja) * 1990-05-28 1992-02-03 Canon Inc 固体撮像素子
JPH07226410A (ja) * 1994-02-14 1995-08-22 Katsuaki Sato カルコパイライト型化合物の薄膜の作製方法及びその薄膜を有した太陽電池
JP2004095931A (ja) * 2002-09-02 2004-03-25 Fuji Xerox Co Ltd 化合物半導体膜の製造方法及びそれを用いた化合物半導体装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001144279A (ja) 1999-11-12 2001-05-25 Sony Corp 固体撮像素子
US7259321B2 (en) * 2002-01-07 2007-08-21 Bp Corporation North America Inc. Method of manufacturing thin film photovoltaic modules
US20050072461A1 (en) * 2003-05-27 2005-04-07 Frank Kuchinski Pinhole porosity free insulating films on flexible metallic substrates for thin film applications
JP2007123721A (ja) * 2005-10-31 2007-05-17 Rohm Co Ltd 光電変換装置の製造方法および光電変換装置
JP2010263190A (ja) * 2009-03-24 2010-11-18 Rohm Co Ltd 半導体装置、光電変換装置および光電変換装置の製造方法
JP5509962B2 (ja) * 2010-03-19 2014-06-04 ソニー株式会社 固体撮像装置、および、その製造方法、電子機器
US8513106B2 (en) * 2010-12-09 2013-08-20 International Business Machines Corporation Pseudo butted junction structure for back plane connection

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0430576A (ja) * 1990-05-28 1992-02-03 Canon Inc 固体撮像素子
JPH07226410A (ja) * 1994-02-14 1995-08-22 Katsuaki Sato カルコパイライト型化合物の薄膜の作製方法及びその薄膜を有した太陽電池
JP2004095931A (ja) * 2002-09-02 2004-03-25 Fuji Xerox Co Ltd 化合物半導体膜の製造方法及びそれを用いた化合物半導体装置

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011119353A (ja) * 2009-12-01 2011-06-16 Fujifilm Corp 光センサー、光センサーアレイ、光センサーの駆動方法、及び光センサーアレイの駆動方法
US8669626B2 (en) 2009-12-01 2014-03-11 Fujifilm Corporation Optical sensor, optical sensor array, optical sensor driving method, and optical sensor array driving method
JP2011199057A (ja) * 2010-03-19 2011-10-06 Sony Corp 固体撮像装置、および、その製造方法、電子機器
JP2012004443A (ja) * 2010-06-18 2012-01-05 Sony Corp 固体撮像装置、電子機器
US9570495B2 (en) 2010-06-18 2017-02-14 Sony Corporation Solid-state imaging device with photoelectric conversion region that is not transparent
US9893101B2 (en) 2012-01-23 2018-02-13 Sony Semiconductor Solutions Corporation Solid-state image pickup unit, method of manufacturing solid-state image pickup unit, and electronic apparatus
JP2014060380A (ja) * 2012-06-14 2014-04-03 Rohm Co Ltd 光電変換装置
US9391103B2 (en) 2013-08-15 2016-07-12 Sony Corporation Image pickup element and image pickup device
JP2016134576A (ja) * 2015-01-22 2016-07-25 日本放送協会 固体撮像素子およびその製造方法
JP2016134577A (ja) * 2015-01-22 2016-07-25 日本放送協会 固体撮像素子の製造方法
JP2017055401A (ja) * 2015-09-07 2017-03-16 株式会社半導体エネルギー研究所 撮像装置およびその動作方法、モジュールならびに電子機器

Also Published As

Publication number Publication date
US8486750B2 (en) 2013-07-16
US20130122634A1 (en) 2013-05-16
US20100276738A1 (en) 2010-11-04
JPWO2009078299A1 (ja) 2011-04-28
US8362527B2 (en) 2013-01-29

Similar Documents

Publication Publication Date Title
WO2009078299A1 (ja) 固体撮像装置およびその製造方法
JP2013033786A5 (ja) 半導体装置、半導体装置の製造方法、および電子機器
US20140027612A1 (en) Integrated Image Sensor Package With Liquid Crystal Lens
CA2712174A1 (en) Method and apparatus for a radiation detector
WO2009011185A1 (ja) 太陽電池の製造方法
JP2008514011A5 (ja)
TW201126709A (en) Solid-state imaging device, process of making solid state imaging device, digital still camera, digital video camera, mobile phone, and endoscope
WO2005104225A3 (en) Method for forming a semiconductor device having a notched control electrode and structure thereof
WO2008087763A1 (ja) 半導体装置およびその製造方法
US10084018B2 (en) Image sensor and electronic device including the same
EP3815139B1 (fr) Dispositif optoelectronique a diodes electroluminescentes
WO2012005540A3 (ko) 유기 발광 소자 및 이의 제조방법
TW200746487A (en) Transistor element, display device and these manufacturing methods
TWI456748B (zh) 背面照射型固態攝像裝置及其之製造方法
TW200822350A (en) Method and apparatus for reducing smear in back-illuminated imaging sensors
EP3931875B1 (fr) Dispositif matriciel pour capteur d'image, à transistors en couches minces et photodiodes organiques
JP2026005239A (ja) 表示装置
CN107170766A (zh) 光栅的制作方法以及背照式cmos图像传感器
TW200627037A (en) Thin film transistor array panel and manufacturing method thereof
WO2003023865A1 (en) Semiconductor device and its manufacturing method
TWI256146B (en) Sensor semiconductor device and fabrication method thereof
WO2009022853A3 (en) Thin film type solar cell and method for manufacturing the same
EP3140867A1 (fr) Dispositif matriciel de detection incorporant un maillage metallique dans une couche de detection et procede de fabrication
JP6085879B2 (ja) 光電変換装置の製造方法
JP2014120629A (ja) 光電変換装置およびその製造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08860988

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2009546223

Country of ref document: JP

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 12808757

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08860988

Country of ref document: EP

Kind code of ref document: A1