WO2009078078A1 - チオピラン誘導体、重合体、及びレジスト組成物、並びに、前記レジスト組成物を用いた半導体装置の製造方法 - Google Patents

チオピラン誘導体、重合体、及びレジスト組成物、並びに、前記レジスト組成物を用いた半導体装置の製造方法 Download PDF

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WO2009078078A1
WO2009078078A1 PCT/JP2007/074128 JP2007074128W WO2009078078A1 WO 2009078078 A1 WO2009078078 A1 WO 2009078078A1 JP 2007074128 W JP2007074128 W JP 2007074128W WO 2009078078 A1 WO2009078078 A1 WO 2009078078A1
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resist composition
producing semiconductor
resist
polymer
semiconductor device
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PCT/JP2007/074128
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English (en)
French (fr)
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Koji Nozaki
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Fujitsu Limited
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Priority to PCT/JP2007/074128 priority Critical patent/WO2009078078A1/ja
Priority to JP2009546092A priority patent/JP5115560B2/ja
Priority to KR1020107012934A priority patent/KR101325848B1/ko
Priority to KR1020137004548A priority patent/KR101344968B1/ko
Publication of WO2009078078A1 publication Critical patent/WO2009078078A1/ja
Priority to US12/783,212 priority patent/US8088556B2/en
Priority to US12/815,462 priority patent/US8080365B2/en

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    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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    • C08G75/00—Macromolecular compounds obtained by reactions forming a linkage containing sulfur with or without nitrogen, oxygen, or carbon in the main chain of the macromolecule
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    • C08G75/0213—Polyarylenethioethers derived from monomers containing one aromatic ring containing elements other than carbon, hydrogen or sulfur
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    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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  • Heterocyclic Compounds Containing Sulfur Atoms (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

Abstract

　レジストに必要な透明性や酸反応性を損なうことなく、レジスト基材樹脂の高屈折率化に有用なチオピラン誘導体、前記チオピラン誘導体を構成成分とする重合体、及び前記重合体を含むレジスト組成物、並びに、前記レジスト組成物を用いた半導体装置の製造方法を提供することを目的とする。 　本発明のチオピラン誘導体は、下記一般式(１)で表される構造を有する。 【化１４】 ・・・一般式(１) 　前記一般式(１)において、Ｘは、Ｏ及びＳのいずれかを表し、Ｒ１は、-Ｈ基、-ＣＨ３基、炭素数２～４のアルキル基、チオエーテル基、及びケトン基のいずれかを表し、Ｒ２は、-Ｈ基、-ＣＨ３基、及びトリフルオロメチル基のいずれかを表し、Ｒ１及びＲ２は、同一でも異なっていてもよい。
PCT/JP2007/074128 2007-12-14 2007-12-14 チオピラン誘導体、重合体、及びレジスト組成物、並びに、前記レジスト組成物を用いた半導体装置の製造方法 WO2009078078A1 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
PCT/JP2007/074128 WO2009078078A1 (ja) 2007-12-14 2007-12-14 チオピラン誘導体、重合体、及びレジスト組成物、並びに、前記レジスト組成物を用いた半導体装置の製造方法
JP2009546092A JP5115560B2 (ja) 2007-12-14 2007-12-14 チオピラン誘導体、重合体、及びレジスト組成物、並びに、前記レジスト組成物を用いた半導体装置の製造方法
KR1020107012934A KR101325848B1 (ko) 2007-12-14 2007-12-14 티오피란 유도체, 중합체, 및 레지스트 조성물, 및, 상기 레지스트 조성물을 이용한 반도체 장치의 제조 방법
KR1020137004548A KR101344968B1 (ko) 2007-12-14 2007-12-14 티오피란 유도체, 중합체, 및 레지스트 조성물, 및, 상기 레지스트 조성물을 이용한 반도체 장치의 제조 방법
US12/783,212 US8088556B2 (en) 2007-12-14 2010-05-19 Thiopyran derivative, polymer, resist composition, and method for manufacturing semiconductor device using such resist composition
US12/815,462 US8080365B2 (en) 2007-12-14 2010-06-15 Thiopyran derivative, polymer, resist composition, and method for manufacturing semiconductor device using such resist composition

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PCT/JP2007/074128 WO2009078078A1 (ja) 2007-12-14 2007-12-14 チオピラン誘導体、重合体、及びレジスト組成物、並びに、前記レジスト組成物を用いた半導体装置の製造方法

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US12/783,212 Continuation US8088556B2 (en) 2007-12-14 2010-05-19 Thiopyran derivative, polymer, resist composition, and method for manufacturing semiconductor device using such resist composition

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012150170A (ja) * 2011-01-17 2012-08-09 Jsr Corp 感放射線性樹脂組成物、パターン形成方法、重合体及び化合物
US8349536B2 (en) 2008-05-29 2013-01-08 Fujitsu Limited Dithiane derivative, polymer, resist composition, and method for manufacturing semiconductor device using such resist composition
JP2017088860A (ja) * 2015-11-06 2017-05-25 住友化学株式会社 レジスト組成物及び樹脂
WO2018012472A1 (ja) * 2016-07-12 2018-01-18 Jsr株式会社 感放射線性樹脂組成物及びレジストパターン形成方法
JP2020152906A (ja) * 2019-03-15 2020-09-24 住友化学株式会社 樹脂、レジスト組成物及びレジストパターンの製造方法

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8974995B2 (en) * 2013-04-03 2015-03-10 Xerox Corporation Carrier resins with improved relative humidity sensitivity
US10163479B2 (en) 2015-08-14 2018-12-25 Spin Transfer Technologies, Inc. Method and apparatus for bipolar memory write-verify
US10446210B2 (en) 2016-09-27 2019-10-15 Spin Memory, Inc. Memory instruction pipeline with a pre-read stage for a write operation for reducing power consumption in a memory device that uses dynamic redundancy registers
US10360964B2 (en) 2016-09-27 2019-07-23 Spin Memory, Inc. Method of writing contents in memory during a power up sequence using a dynamic redundancy register in a memory device
US10437491B2 (en) 2016-09-27 2019-10-08 Spin Memory, Inc. Method of processing incomplete memory operations in a memory device during a power up sequence and a power down sequence using a dynamic redundancy register
US10366774B2 (en) 2016-09-27 2019-07-30 Spin Memory, Inc. Device with dynamic redundancy registers
US10546625B2 (en) 2016-09-27 2020-01-28 Spin Memory, Inc. Method of optimizing write voltage based on error buffer occupancy
US10437723B2 (en) 2016-09-27 2019-10-08 Spin Memory, Inc. Method of flushing the contents of a dynamic redundancy register to a secure storage area during a power down in a memory device
US10460781B2 (en) 2016-09-27 2019-10-29 Spin Memory, Inc. Memory device with a dual Y-multiplexer structure for performing two simultaneous operations on the same row of a memory bank
US10818331B2 (en) 2016-09-27 2020-10-27 Spin Memory, Inc. Multi-chip module for MRAM devices with levels of dynamic redundancy registers
CN106886128B (zh) * 2017-03-28 2021-02-19 深圳市道尔顿电子材料有限公司 一种负性光刻胶
US10529439B2 (en) 2017-10-24 2020-01-07 Spin Memory, Inc. On-the-fly bit failure detection and bit redundancy remapping techniques to correct for fixed bit defects
US10481976B2 (en) 2017-10-24 2019-11-19 Spin Memory, Inc. Forcing bits as bad to widen the window between the distributions of acceptable high and low resistive bits thereby lowering the margin and increasing the speed of the sense amplifiers
US10656994B2 (en) 2017-10-24 2020-05-19 Spin Memory, Inc. Over-voltage write operation of tunnel magnet-resistance (“TMR”) memory device and correcting failure bits therefrom by using on-the-fly bit failure detection and bit redundancy remapping techniques
US10489245B2 (en) 2017-10-24 2019-11-26 Spin Memory, Inc. Forcing stuck bits, waterfall bits, shunt bits and low TMR bits to short during testing and using on-the-fly bit failure detection and bit redundancy remapping techniques to correct them
US10424726B2 (en) 2017-12-28 2019-09-24 Spin Memory, Inc. Process for improving photoresist pillar adhesion during MRAM fabrication
US10891997B2 (en) 2017-12-28 2021-01-12 Spin Memory, Inc. Memory array with horizontal source line and a virtual source line
US10395712B2 (en) 2017-12-28 2019-08-27 Spin Memory, Inc. Memory array with horizontal source line and sacrificial bitline per virtual source
US10360962B1 (en) 2017-12-28 2019-07-23 Spin Memory, Inc. Memory array with individually trimmable sense amplifiers
US10811594B2 (en) 2017-12-28 2020-10-20 Spin Memory, Inc. Process for hard mask development for MRAM pillar formation using photolithography
US10395711B2 (en) 2017-12-28 2019-08-27 Spin Memory, Inc. Perpendicular source and bit lines for an MRAM array
US10784439B2 (en) 2017-12-29 2020-09-22 Spin Memory, Inc. Precessional spin current magnetic tunnel junction devices and methods of manufacture
US10840439B2 (en) 2017-12-29 2020-11-17 Spin Memory, Inc. Magnetic tunnel junction (MTJ) fabrication methods and systems
US10886330B2 (en) 2017-12-29 2021-01-05 Spin Memory, Inc. Memory device having overlapping magnetic tunnel junctions in compliance with a reference pitch
US10840436B2 (en) 2017-12-29 2020-11-17 Spin Memory, Inc. Perpendicular magnetic anisotropy interface tunnel junction devices and methods of manufacture
US10546624B2 (en) 2017-12-29 2020-01-28 Spin Memory, Inc. Multi-port random access memory
US10424723B2 (en) 2017-12-29 2019-09-24 Spin Memory, Inc. Magnetic tunnel junction devices including an optimization layer
US10367139B2 (en) 2017-12-29 2019-07-30 Spin Memory, Inc. Methods of manufacturing magnetic tunnel junction devices
US10438995B2 (en) 2018-01-08 2019-10-08 Spin Memory, Inc. Devices including magnetic tunnel junctions integrated with selectors
US10438996B2 (en) 2018-01-08 2019-10-08 Spin Memory, Inc. Methods of fabricating magnetic tunnel junctions integrated with selectors
US10446744B2 (en) 2018-03-08 2019-10-15 Spin Memory, Inc. Magnetic tunnel junction wafer adaptor used in magnetic annealing furnace and method of using the same
US11107978B2 (en) 2018-03-23 2021-08-31 Spin Memory, Inc. Methods of manufacturing three-dimensional arrays with MTJ devices including a free magnetic trench layer and a planar reference magnetic layer
US11107974B2 (en) 2018-03-23 2021-08-31 Spin Memory, Inc. Magnetic tunnel junction devices including a free magnetic trench layer and a planar reference magnetic layer
US10784437B2 (en) 2018-03-23 2020-09-22 Spin Memory, Inc. Three-dimensional arrays with MTJ devices including a free magnetic trench layer and a planar reference magnetic layer
US10529915B2 (en) 2018-03-23 2020-01-07 Spin Memory, Inc. Bit line structures for three-dimensional arrays with magnetic tunnel junction devices including an annular free magnetic layer and a planar reference magnetic layer
US10411185B1 (en) 2018-05-30 2019-09-10 Spin Memory, Inc. Process for creating a high density magnetic tunnel junction array test platform
US10692569B2 (en) 2018-07-06 2020-06-23 Spin Memory, Inc. Read-out techniques for multi-bit cells
US10559338B2 (en) 2018-07-06 2020-02-11 Spin Memory, Inc. Multi-bit cell read-out techniques
US10600478B2 (en) 2018-07-06 2020-03-24 Spin Memory, Inc. Multi-bit cell read-out techniques for MRAM cells with mixed pinned magnetization orientations
US10593396B2 (en) 2018-07-06 2020-03-17 Spin Memory, Inc. Multi-bit cell read-out techniques for MRAM cells with mixed pinned magnetization orientations
US10650875B2 (en) 2018-08-21 2020-05-12 Spin Memory, Inc. System for a wide temperature range nonvolatile memory
US10699761B2 (en) 2018-09-18 2020-06-30 Spin Memory, Inc. Word line decoder memory architecture
US10971680B2 (en) 2018-10-01 2021-04-06 Spin Memory, Inc. Multi terminal device stack formation methods
US11621293B2 (en) 2018-10-01 2023-04-04 Integrated Silicon Solution, (Cayman) Inc. Multi terminal device stack systems and methods
US11107979B2 (en) 2018-12-28 2021-08-31 Spin Memory, Inc. Patterned silicide structures and methods of manufacture

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09110790A (ja) * 1995-10-16 1997-04-28 Mitsubishi Rayon Co Ltd 新規な（メタ）アクリル酸エステル
JP2005133071A (ja) * 2003-08-29 2005-05-26 General Electric Co <Ge> 高屈折率、ｕｖ硬化性モノマー及びそのコーティング組成物
WO2006033359A1 (ja) * 2004-09-24 2006-03-30 Idemitsu Kosan Co., Ltd. アダマンタン誘導体、その製造方法及びフォトレジスト用感光材料

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030215736A1 (en) * 2002-01-09 2003-11-20 Oberlander Joseph E. Negative-working photoimageable bottom antireflective coating
US7045558B2 (en) 2003-08-29 2006-05-16 General Electric Company Method of making a high refractive index optical management coating and the coating
US20050214674A1 (en) * 2004-03-25 2005-09-29 Yu Sui Positive-working photoimageable bottom antireflective coating
US7932334B2 (en) * 2005-12-27 2011-04-26 Sumitomo Chemical Company, Limited Resin suitable for an acid generator
JP4752794B2 (ja) * 2007-03-08 2011-08-17 Ｊｓｒ株式会社 感放射線性樹脂組成物及び感放射線性樹脂組成物用重合体
JP5104343B2 (ja) * 2008-01-28 2012-12-19 富士通株式会社 モノマー、樹脂及び該樹脂を用いたレジスト組成物、並びに、該レジスト組成物を用いた半導体装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09110790A (ja) * 1995-10-16 1997-04-28 Mitsubishi Rayon Co Ltd 新規な（メタ）アクリル酸エステル
JP2005133071A (ja) * 2003-08-29 2005-05-26 General Electric Co <Ge> 高屈折率、ｕｖ硬化性モノマー及びそのコーティング組成物
WO2006033359A1 (ja) * 2004-09-24 2006-03-30 Idemitsu Kosan Co., Ltd. アダマンタン誘導体、その製造方法及びフォトレジスト用感光材料

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
J. HEIJBOER ET AL.: "Study of the molecular movement of oxa- and thiacyclohexyl rings in solid polymers by mechanical measurements over a broad frequency range", MACROMOLECULAR SCIENCE-PHYSICS, vol. 5, no. 2, 1971, pages 375 - 392 *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8349536B2 (en) 2008-05-29 2013-01-08 Fujitsu Limited Dithiane derivative, polymer, resist composition, and method for manufacturing semiconductor device using such resist composition
JP2012150170A (ja) * 2011-01-17 2012-08-09 Jsr Corp 感放射線性樹脂組成物、パターン形成方法、重合体及び化合物
JP2017088860A (ja) * 2015-11-06 2017-05-25 住友化学株式会社 レジスト組成物及び樹脂
WO2018012472A1 (ja) * 2016-07-12 2018-01-18 Jsr株式会社 感放射線性樹脂組成物及びレジストパターン形成方法
JPWO2018012472A1 (ja) * 2016-07-12 2019-05-16 Jsr株式会社 感放射線性樹脂組成物及びレジストパターン形成方法
JP2020152906A (ja) * 2019-03-15 2020-09-24 住友化学株式会社 樹脂、レジスト組成物及びレジストパターンの製造方法
JP7389683B2 (ja) 2019-03-15 2023-11-30 住友化学株式会社 樹脂、レジスト組成物及びレジストパターンの製造方法

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