WO2009063788A1 - スパッタリング装置およびスパッタリング成膜方法 - Google Patents

スパッタリング装置およびスパッタリング成膜方法 Download PDF

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Publication number
WO2009063788A1
WO2009063788A1 PCT/JP2008/070177 JP2008070177W WO2009063788A1 WO 2009063788 A1 WO2009063788 A1 WO 2009063788A1 JP 2008070177 W JP2008070177 W JP 2008070177W WO 2009063788 A1 WO2009063788 A1 WO 2009063788A1
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WO
WIPO (PCT)
Prior art keywords
carousel
work holder
work
target
sputtering
Prior art date
Application number
PCT/JP2008/070177
Other languages
English (en)
French (fr)
Inventor
Kuniaki Horie
Naoki Takahashi
Original Assignee
Ebara-Udylite Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara-Udylite Co., Ltd. filed Critical Ebara-Udylite Co., Ltd.
Priority to CN200880116429.XA priority Critical patent/CN101855383B/zh
Priority to KR1020107010730A priority patent/KR101254988B1/ko
Priority to JP2009541107A priority patent/JP5364590B2/ja
Publication of WO2009063788A1 publication Critical patent/WO2009063788A1/ja

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

　ワークとしてプラスチック等の耐熱性の低い素材にスパッタで成膜を施す場合であっても、ワークへの熱電子の入射を抑制し、熱によるワークの変形等の問題が生じないスパッタリング装置を提供することを目的とする。当該装置は、真空チャンバー内に、ターゲットと、ターゲットに対向して設置され、回転軸を有するカルーセル型ワークホルダーとを備え、前記カルーセル型ワークホルダーは、ワークホルダー支持部と複数のワーク保持部を備え、前記ワーク保持部は前記ワークホルダー支持部の外周部に設置され、前記カルーセル型ワークホルダーおよび／またはワーク保持部は、ターゲットとカルーセル型ワークホルダーの回転軸を結ぶ面に垂直な面内に有する軸で回転可能に設置されたものであり、前記カルーセル型ワークホルダーの内側には、熱電子捕捉部材を設置したことを特徴とする。
PCT/JP2008/070177 2007-11-13 2008-11-06 スパッタリング装置およびスパッタリング成膜方法 WO2009063788A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN200880116429.XA CN101855383B (zh) 2007-11-13 2008-11-06 溅镀装置及溅镀成膜方法
KR1020107010730A KR101254988B1 (ko) 2007-11-13 2008-11-06 스퍼터링 장치 및 스퍼터링 성막 방법
JP2009541107A JP5364590B2 (ja) 2007-11-13 2008-11-06 スパッタリング装置およびスパッタリング成膜方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007293828 2007-11-13
JP2007-293828 2007-11-13

Publications (1)

Publication Number Publication Date
WO2009063788A1 true WO2009063788A1 (ja) 2009-05-22

Family

ID=40638640

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/070177 WO2009063788A1 (ja) 2007-11-13 2008-11-06 スパッタリング装置およびスパッタリング成膜方法

Country Status (5)

Country Link
JP (1) JP5364590B2 (ja)
KR (1) KR101254988B1 (ja)
CN (1) CN101855383B (ja)
TW (1) TWI426144B (ja)
WO (1) WO2009063788A1 (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102277559A (zh) * 2010-06-10 2011-12-14 鸿富锦精密工业（深圳）有限公司 溅镀装置
CN101994090B (zh) * 2009-08-14 2013-06-05 鸿富锦精密工业（深圳）有限公司 溅镀载具及包括该溅镀载具的溅镀装置
WO2015193584A1 (fr) * 2014-06-18 2015-12-23 H.E.F. Procédé de revêtement en carbone dlc du nez des cames d'un arbre à came, arbre à cames ainsi obtenu et installation pour la mise en oeuvre de ce procédé
CN108225593A (zh) * 2018-03-14 2018-06-29 嘉兴岱源真空科技有限公司 一种工件温度检测装置及纳米材料制作设备
CN110885966A (zh) * 2019-11-22 2020-03-17 维达力实业(深圳)有限公司 滚筒式磁控溅射镀膜机
WO2023024329A1 (zh) * 2021-08-24 2023-03-02 湘潭宏大真空技术股份有限公司 用于真空磁控溅射镀膜机的工件转移装置

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160133445A9 (en) * 2011-11-04 2016-05-12 Intevac, Inc. Sputtering system and method for highly magnetic materials
US10106883B2 (en) 2011-11-04 2018-10-23 Intevac, Inc. Sputtering system and method using direction-dependent scan speed or power
EP2947175A1 (en) * 2014-05-21 2015-11-25 Heraeus Deutschland GmbH & Co. KG CuSn, CuZn and Cu2ZnSn sputter targets
JP7097172B2 (ja) * 2017-11-21 2022-07-07 キヤノントッキ株式会社 スパッタリング装置
CN112342518A (zh) * 2020-10-21 2021-02-09 派珂纳米科技(苏州)有限公司 一种用于磁环镀膜的卧式真空镀膜机

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58210165A (ja) * 1982-05-31 1983-12-07 Fujitsu Ltd スパツタリング装置
JPS62174376A (ja) * 1986-01-28 1987-07-31 Fujitsu Ltd スパツタ装置
JP2005048227A (ja) * 2003-07-28 2005-02-24 Fts Corporation:Kk 箱型対向ターゲット式スパッタ装置及び化合物薄膜の製造方法
JP2005213585A (ja) * 2004-01-29 2005-08-11 Konica Minolta Opto Inc マグネトロンスパッタ装置
JP2007162049A (ja) * 2005-12-12 2007-06-28 Asahi Techno Glass Corp カルーセル型スパッタリング装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN86205741U (zh) * 1986-08-16 1987-07-15 北京市有色金属研究总院 物理气相沉积用的涂层装置
AU2003241958A1 (en) * 2002-05-31 2003-12-19 Shibaura Mechatronics Corporation Discharging power source, sputtering power source, and sputtering device
CN1308484C (zh) * 2004-05-20 2007-04-04 中国科学院上海光学精密机械研究所 夹具三维运动的控制装置
TWI322190B (en) * 2004-12-28 2010-03-21 Fts Corp Facing-targets sputtering apparatus

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58210165A (ja) * 1982-05-31 1983-12-07 Fujitsu Ltd スパツタリング装置
JPS62174376A (ja) * 1986-01-28 1987-07-31 Fujitsu Ltd スパツタ装置
JP2005048227A (ja) * 2003-07-28 2005-02-24 Fts Corporation:Kk 箱型対向ターゲット式スパッタ装置及び化合物薄膜の製造方法
JP2005213585A (ja) * 2004-01-29 2005-08-11 Konica Minolta Opto Inc マグネトロンスパッタ装置
JP2007162049A (ja) * 2005-12-12 2007-06-28 Asahi Techno Glass Corp カルーセル型スパッタリング装置

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101994090B (zh) * 2009-08-14 2013-06-05 鸿富锦精密工业（深圳）有限公司 溅镀载具及包括该溅镀载具的溅镀装置
CN102277559A (zh) * 2010-06-10 2011-12-14 鸿富锦精密工业（深圳）有限公司 溅镀装置
WO2015193584A1 (fr) * 2014-06-18 2015-12-23 H.E.F. Procédé de revêtement en carbone dlc du nez des cames d'un arbre à came, arbre à cames ainsi obtenu et installation pour la mise en oeuvre de ce procédé
FR3022561A1 (fr) * 2014-06-18 2015-12-25 Hydromecanique & Frottement Procede de revetement en carbone dlc du nez des cames d'un arbre a came, arbre a cames ainsi obtenu et installation pour la mise en oeuvre de ce procede
KR20170020471A (ko) * 2014-06-18 2017-02-22 에이치.이.에프. Dlc로 캠샤프트의 캠의 노즈를 코팅하기 위한 방법, 이 방법으로 얻어진 캠샤프트 및 이 방법을 구현하기 위한 설비
US10683777B2 (en) 2014-06-18 2020-06-16 H.E.F. Method for coating the nose of the cams of a camshaft with DLC, camshaft obtained in this way and facility for implementing said method
KR102365491B1 (ko) 2014-06-18 2022-02-18 이드러메까니끄 에 프러뜨망 Dlc로 캠샤프트의 캠의 노즈를 코팅하기 위한 방법, 이 방법으로 얻어진 캠샤프트 및 이 방법을 구현하기 위한 설비
CN108225593A (zh) * 2018-03-14 2018-06-29 嘉兴岱源真空科技有限公司 一种工件温度检测装置及纳米材料制作设备
CN108225593B (zh) * 2018-03-14 2024-05-24 嘉兴岱源真空科技有限公司 一种工件温度检测装置及纳米材料制作设备
CN110885966A (zh) * 2019-11-22 2020-03-17 维达力实业(深圳)有限公司 滚筒式磁控溅射镀膜机
WO2023024329A1 (zh) * 2021-08-24 2023-03-02 湘潭宏大真空技术股份有限公司 用于真空磁控溅射镀膜机的工件转移装置

Also Published As

Publication number Publication date
TWI426144B (zh) 2014-02-11
JPWO2009063788A1 (ja) 2011-03-31
KR20100080934A (ko) 2010-07-13
JP5364590B2 (ja) 2013-12-11
CN101855383A (zh) 2010-10-06
KR101254988B1 (ko) 2013-04-16
TW200938646A (en) 2009-09-16
CN101855383B (zh) 2013-06-12

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