WO2009063733A1 - 光導電アンテナ素子 - Google Patents

光導電アンテナ素子 Download PDF

Info

Publication number
WO2009063733A1
WO2009063733A1 PCT/JP2008/069308 JP2008069308W WO2009063733A1 WO 2009063733 A1 WO2009063733 A1 WO 2009063733A1 JP 2008069308 W JP2008069308 W JP 2008069308W WO 2009063733 A1 WO2009063733 A1 WO 2009063733A1
Authority
WO
WIPO (PCT)
Prior art keywords
section
antenna
electrode
antenna element
photoconductive antenna
Prior art date
Application number
PCT/JP2008/069308
Other languages
English (en)
French (fr)
Inventor
Kazuyoshi Kuroyanagi
Kazutoshi Nakajima
Original Assignee
Hamamatsu Photonics K.K.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics K.K. filed Critical Hamamatsu Photonics K.K.
Priority to US12/738,163 priority Critical patent/US8093560B2/en
Priority to EP08849464.6A priority patent/EP2219266A4/en
Publication of WO2009063733A1 publication Critical patent/WO2009063733A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/44—Details of, or arrangements associated with, antennas using equipment having another main function to serve additionally as an antenna, e.g. means for giving an antenna an aesthetic aspect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/06—Arrays of individually energised antenna units similarly polarised and spaced apart
    • H01Q21/061—Two dimensional planar arrays
    • H01Q21/062—Two dimensional planar arrays using dipole aerials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04—Resonant antennas
    • H01Q9/16—Resonant antennas with feed intermediate between the extremities of the antenna, e.g. centre-fed dipole
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04—Resonant antennas
    • H01Q9/16—Resonant antennas with feed intermediate between the extremities of the antenna, e.g. centre-fed dipole
    • H01Q9/28—Conical, cylindrical, cage, strip, gauze, or like elements having an extended radiating surface; Elements comprising two conical surfaces having collinear axes and adjacent apices and fed by two-conductor transmission lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S1/00—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
    • H01S1/02—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range solid
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Details Of Aerials (AREA)
  • Aerials With Secondary Devices (AREA)

Abstract

　この発明は、素子特性の劣化防止と小型化を両立させるための構造を備えた光導電アンテナ素子に関する。当該光導電アンテナ素子(17)は、半導体層(19)上に形成された一対の電極(21)を備える。各電極(21)は、アンテナ部(22)と、パッド部(23)と、これらを接続するライン部(24)から構成され、該ライン部(24)は、アンテナ部(22)から延在する平行部分(24a)を含む。また、一方の電極(21)のライン部(24)は、アンテナ領域(A)以外の部分が他方の電極(21)に対して反対方向に屈曲されており、該他方の電極(21)のライン部(24)も、アンテナ領域(A)以外の部分が一方の電極(21)に対して反対方向に屈曲されている。この構成により、当該光導電アンテナ素子(17)における素子特性の劣化防止と小型化が可能になる。
PCT/JP2008/069308 2007-11-14 2008-10-24 光導電アンテナ素子 WO2009063733A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/738,163 US8093560B2 (en) 2007-11-14 2008-10-24 Photoconductive antenna element
EP08849464.6A EP2219266A4 (en) 2007-11-14 2008-10-24 PHOTOCONDUCTIVE ANTENNA ELEMENT

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007295978A JP5222532B2 (ja) 2007-11-14 2007-11-14 光導電アンテナ素子
JP2007-295978 2007-11-14

Publications (1)

Publication Number Publication Date
WO2009063733A1 true WO2009063733A1 (ja) 2009-05-22

Family

ID=40638586

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/069308 WO2009063733A1 (ja) 2007-11-14 2008-10-24 光導電アンテナ素子

Country Status (4)

Country Link
US (1) US8093560B2 (ja)
EP (1) EP2219266A4 (ja)
JP (1) JP5222532B2 (ja)
WO (1) WO2009063733A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019532599A (ja) * 2016-09-07 2019-11-07 フラウンホファー‐ゲゼルシャフト・ツア・フェルデルング・デア・アンゲヴァンテン・フォルシュング・エー・ファウ テラヘルツトランシーバ
US11024937B2 (en) * 2018-07-27 2021-06-01 The Government Of The United States Of America, As Represented By The Secretary Of The Navy High power broadband terahertz emitter with enhanced stability and beam polarity

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012057710A1 (en) * 2010-10-29 2012-05-03 Agency For Science, Technology And Research THz PHOTOMIXER EMITTER AND METHOD
JP5799538B2 (ja) * 2011-03-18 2015-10-28 セイコーエプソン株式会社 テラヘルツ波発生装置、カメラ、イメージング装置、計測装置および光源装置
JP6003063B2 (ja) 2012-01-18 2016-10-05 セイコーエプソン株式会社 光伝導アンテナ、テラヘルツ波発生装置、カメラ、イメージング装置および計測装置
JP6047795B2 (ja) * 2012-11-12 2016-12-21 日東電工株式会社 アンテナモジュール
JP6032427B2 (ja) 2013-02-27 2016-11-30 セイコーエプソン株式会社 光伝導アンテナ、カメラ、イメージング装置、および計測装置
CN103236591B (zh) * 2013-04-10 2015-06-24 西安理工大学 具有欧姆接触电极的半绝缘GaAs光电导天线
JP2014241517A (ja) 2013-06-11 2014-12-25 キヤノン株式会社 テラヘルツ波を発生する装置、またはテラヘルツ波を検出する装置
JP2015159176A (ja) 2014-02-24 2015-09-03 セイコーエプソン株式会社 光伝導アンテナ、カメラ、イメージング装置、および計測装置
GB201416558D0 (en) * 2014-09-19 2014-11-05 Univ Leeds Detectors
KR102534878B1 (ko) * 2016-01-27 2023-05-22 한국전자통신연구원 테라헤르츠 소자
EP3730996A4 (en) * 2017-12-22 2021-03-03 Sony Corporation CONTACT LENS AND COMMUNICATION SYSTEM

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002223017A (ja) * 2001-01-26 2002-08-09 Tochigi Nikon Corp テラヘルツ光素子、並びに、これを用いたテラヘルツ光発生装置及びテラヘルツ光検出装置
JP2004207288A (ja) 2002-12-24 2004-07-22 Tochigi Nikon Corp テラヘルツ光発生器及びテラヘルツ光検出器
JP2004363485A (ja) * 2003-06-06 2004-12-24 Japan Science & Technology Agency 光−磁束変換型入力インターフェース回路
JP2006170822A (ja) * 2004-12-16 2006-06-29 Tochigi Nikon Corp テラヘルツ光検出器、テラヘルツ光検出方法およびテラヘルツイメージング装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3230743B2 (ja) 1999-01-14 2001-11-19 日本電気株式会社 メモリカードのデータ不一致検出方式及びその方法
GB2409337B (en) * 2002-09-04 2005-08-03 Teraview Ltd An emitter
GB2392782B (en) * 2002-09-04 2005-07-13 Teraview Ltd An Antenna
US7615749B2 (en) * 2004-09-30 2009-11-10 Japan Science And Technology Agency Infrared light emitting device, infrared light detecting device, time-domain pulsed spectrometer apparatus, and infrared light emitting method
DE102005032900B3 (de) * 2005-07-12 2007-02-15 Technische Universität Braunschweig THz-Sender und THz-Empfänger
US8067739B2 (en) * 2007-06-22 2011-11-29 Canon Kabushiki Kaisha Photoconductive element for generation and detection of terahertz wave

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002223017A (ja) * 2001-01-26 2002-08-09 Tochigi Nikon Corp テラヘルツ光素子、並びに、これを用いたテラヘルツ光発生装置及びテラヘルツ光検出装置
JP2004207288A (ja) 2002-12-24 2004-07-22 Tochigi Nikon Corp テラヘルツ光発生器及びテラヘルツ光検出器
JP2004363485A (ja) * 2003-06-06 2004-12-24 Japan Science & Technology Agency 光−磁束変換型入力インターフェース回路
JP2006170822A (ja) * 2004-12-16 2006-06-29 Tochigi Nikon Corp テラヘルツ光検出器、テラヘルツ光検出方法およびテラヘルツイメージング装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2219266A4 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019532599A (ja) * 2016-09-07 2019-11-07 フラウンホファー‐ゲゼルシャフト・ツア・フェルデルング・デア・アンゲヴァンテン・フォルシュング・エー・ファウ テラヘルツトランシーバ
US11469509B2 (en) 2016-09-07 2022-10-11 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Terahertz transceivers
US11024937B2 (en) * 2018-07-27 2021-06-01 The Government Of The United States Of America, As Represented By The Secretary Of The Navy High power broadband terahertz emitter with enhanced stability and beam polarity

Also Published As

Publication number Publication date
US20100230596A1 (en) 2010-09-16
US8093560B2 (en) 2012-01-10
EP2219266A1 (en) 2010-08-18
JP2009124437A (ja) 2009-06-04
EP2219266A4 (en) 2015-05-06
JP5222532B2 (ja) 2013-06-26

Similar Documents

Publication Publication Date Title
WO2009063733A1 (ja) 光導電アンテナ素子
WO2008107205A3 (de) Frontseitig serienverschaltetes solarmodul
WO2011016944A3 (en) Photovoltaic cell with efficient finger and tab layout
WO2008102718A1 (ja) 半導体記憶装置
WO2008009282A3 (de) Widerstandsanordnung
EP2031934A3 (en) Heating substrate equipped with conductive-thin-film and electrode and manufacturing method of the same
WO2009134095A3 (ko) 발광 소자 및 그 제조방법
WO2009076398A3 (en) Photovoltaic panel and cell with fine fingers and method of manufacture of the same
WO2009021741A3 (de) Organische elektronische bauelemente
WO2009013826A1 (ja) 半導体装置
TW200733158A (en) Laminated ceramic capacitor
WO2007012490A3 (de) Halbleiterbauelement mit einer driftzone und einer driftsteuerzone
EA201390096A1 (ru) Стекло с электрическим присоединительным элементом
ATE394525T1 (de) Grosse elektrode
WO2007016444A3 (en) Digital micro-mirror device with free standing spring tips and distributed address electrodes
WO2010018162A3 (de) Thermoelektrische vorrichtung
EP2477274A3 (en) Patch antenna device and antenna device
WO2009143249A3 (en) Grounding electrode
TW200723539A (en) Display and manufacturing method thereof
WO2010078051A3 (en) Embedded memory cell and method of manufacturing same
MY176260A (en) Rfid transponder antenna
WO2010065070A3 (en) Electrostatic chuck
WO2008097248A3 (en) Electrodes, devices, and methods for electro-incapacitation
TW200943562A (en) Thin film type solar cell and method for manufacturing the same
WO2006123105A3 (en) Semiconductor device and method of forming a semiconductor device

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08849464

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 12738163

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2008849464

Country of ref document: EP