WO2009060907A1 - 半導体装置ならびにそれを備えた電源および演算処理装置 - Google Patents

半導体装置ならびにそれを備えた電源および演算処理装置 Download PDF

Info

Publication number
WO2009060907A1
WO2009060907A1 PCT/JP2008/070225 JP2008070225W WO2009060907A1 WO 2009060907 A1 WO2009060907 A1 WO 2009060907A1 JP 2008070225 W JP2008070225 W JP 2008070225W WO 2009060907 A1 WO2009060907 A1 WO 2009060907A1
Authority
WO
WIPO (PCT)
Prior art keywords
power supply
semiconductor device
node
resistance
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/070225
Other languages
English (en)
French (fr)
Inventor
Kenji Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to US12/594,038 priority Critical patent/US7965128B2/en
Priority to JP2009540084A priority patent/JP5355414B2/ja
Priority to CN2008800159311A priority patent/CN101681881B/zh
Publication of WO2009060907A1 publication Critical patent/WO2009060907A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/817—Combinations of field-effect devices and resistors only

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Control Of Electrical Variables (AREA)

Abstract

　半導体装置（３０１）は、第１の電源電圧が供給される第１電源ノードに結合された第１電極と、第２電極とを有し、温度検出素子（ＴＤ１～ＴＤ１２）に基準電流を供給するトランジスタ（Ｍ２）と、第１電源ノードに結合された電位固定ノードを有する第１半導体領域と、トランジスタ（Ｍ２）の第２電極に結合された第１抵抗ノードと、第２の電源電圧が供給される第２電源ノードに結合された第２抵抗ノードとを有し、第１半導体領域の表面に形成された第２半導体領域とを含む拡散抵抗（Ｒ１）と、電位固定ノードおよび第２抵抗ノードを介して流れる電流と略同じ大きさでかつ同じ方向の電流を、拡散抵抗（Ｒ１）を介さずにトランジスタ（Ｍ２）を介して流すリーク電流補正回路（ＣＲ１）とを備える。
PCT/JP2008/070225 2007-11-08 2008-11-06 半導体装置ならびにそれを備えた電源および演算処理装置 Ceased WO2009060907A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/594,038 US7965128B2 (en) 2007-11-08 2008-11-06 Semiconductor device, and power source and processor provided with the same
JP2009540084A JP5355414B2 (ja) 2007-11-08 2008-11-06 半導体装置ならびにそれを備えた電源および演算処理装置
CN2008800159311A CN101681881B (zh) 2007-11-08 2008-11-06 半导体装置以及具备该半导体装置的电源和运算处理装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-291101 2007-11-08
JP2007291101 2007-11-08

Publications (1)

Publication Number Publication Date
WO2009060907A1 true WO2009060907A1 (ja) 2009-05-14

Family

ID=40625794

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/070225 Ceased WO2009060907A1 (ja) 2007-11-08 2008-11-06 半導体装置ならびにそれを備えた電源および演算処理装置

Country Status (4)

Country Link
US (1) US7965128B2 (ja)
JP (1) JP5355414B2 (ja)
CN (1) CN101681881B (ja)
WO (1) WO2009060907A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101911367B1 (ko) * 2010-09-27 2018-10-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기준 전류 생성 회로, 기준 전압 생성 회로, 및 온도 검출 회로
JPWO2022091540A1 (ja) * 2020-10-27 2022-05-05
JP7103742B1 (ja) 2021-09-22 2022-07-20 ウィンボンド エレクトロニクス コーポレーション 電圧生成回路

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2918504B1 (fr) * 2007-07-06 2009-11-27 St Microelectronics Sa Resistance integree diffusee
JP2010014445A (ja) * 2008-07-01 2010-01-21 Seiko Instruments Inc 半導体温度センサ
US10614860B1 (en) 2019-04-15 2020-04-07 Micron Technology, Inc. Systems for discharging leakage current over a range of process, voltage, temperature (PVT) conditions
US11309435B2 (en) * 2020-03-09 2022-04-19 Globalfoundries U.S. Inc. Bandgap reference circuit including vertically stacked active SOI devices
CN113391667B (zh) * 2020-03-12 2026-04-10 恩智浦美国有限公司 偏置电流发生电路
JP2023009328A (ja) * 2021-07-07 2023-01-20 ローム株式会社 温度検出回路及び半導体装置
TWI894425B (zh) * 2022-01-18 2025-08-21 聯華電子股份有限公司 具有背部穿矽孔的半導體結構及其得出晶粒識別碼的方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02260914A (ja) * 1989-03-31 1990-10-23 Mitsubishi Electric Corp 半導体集積回路
JPH06169222A (ja) * 1992-11-30 1994-06-14 Nec Kansai Ltd 過熱検出回路
JP2001264176A (ja) * 2000-01-12 2001-09-26 Japan Science & Technology Corp 温度測定装置、熱型赤外線イメージセンサ及び温度測定方法
JP2002368110A (ja) * 2001-06-08 2002-12-20 Rohm Co Ltd 半導体集積回路装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5604467A (en) * 1993-02-11 1997-02-18 Benchmarg Microelectronics Temperature compensated current source operable to drive a current controlled oscillator
SG86389A1 (en) * 1999-04-21 2002-02-19 Em Microelectronic Marin Sa Temperature level detection circuit
JP4276812B2 (ja) * 2002-03-20 2009-06-10 株式会社リコー 温度検出回路
JP4665452B2 (ja) 2004-08-03 2011-04-06 富士電機システムズ株式会社 温度検知回路、および温度検知回路を備えたパワー半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02260914A (ja) * 1989-03-31 1990-10-23 Mitsubishi Electric Corp 半導体集積回路
JPH06169222A (ja) * 1992-11-30 1994-06-14 Nec Kansai Ltd 過熱検出回路
JP2001264176A (ja) * 2000-01-12 2001-09-26 Japan Science & Technology Corp 温度測定装置、熱型赤外線イメージセンサ及び温度測定方法
JP2002368110A (ja) * 2001-06-08 2002-12-20 Rohm Co Ltd 半導体集積回路装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101911367B1 (ko) * 2010-09-27 2018-10-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기준 전류 생성 회로, 기준 전압 생성 회로, 및 온도 검출 회로
JPWO2022091540A1 (ja) * 2020-10-27 2022-05-05
JP7692163B2 (ja) 2020-10-27 2025-06-13 パナソニックＩｐマネジメント株式会社 基板電流抑制回路、基準電圧生成回路および半導体装置
JP7103742B1 (ja) 2021-09-22 2022-07-20 ウィンボンド エレクトロニクス コーポレーション 電圧生成回路
TWI792988B (zh) * 2021-09-22 2023-02-11 華邦電子股份有限公司 電壓生成電路及半導體裝置
JP2023045472A (ja) * 2021-09-22 2023-04-03 ウィンボンド エレクトロニクス コーポレーション 電圧生成回路

Also Published As

Publication number Publication date
US20100109752A1 (en) 2010-05-06
CN101681881B (zh) 2011-12-28
US7965128B2 (en) 2011-06-21
CN101681881A (zh) 2010-03-24
JP5355414B2 (ja) 2013-11-27
JPWO2009060907A1 (ja) 2011-03-24

Similar Documents

Publication Publication Date Title
WO2009060907A1 (ja) 半導体装置ならびにそれを備えた電源および演算処理装置
TW200723691A (en) Semiconductor integrated circuit apparatus and electronic apparatus
JP2010157636A5 (ja)
JP2010014445A (ja) 半導体温度センサ
TW200745527A (en) Dynamic quantity measurement device
MY159871A (en) Semiconductor device
ATE543174T1 (de) Oled-display mit alterungs- und wirkungsgradkompensation
TW200605090A (en) Semiconductor memory device
WO2008129625A1 (ja) リーク電流検出回路、ボディバイアス制御回路、半導体装置及び半導体装置の試験方法
WO2008027663A3 (en) Distributed electrostatic discharge protection circuit with varying clamp size
ATE520152T1 (de) Leistungshalbleiterbauelement
JP2011008514A5 (ja)
JP2009165114A5 (ja)
TW200637096A (en) Power clamp circuit and semiconductor device
SE0700896L (sv) Halvledarkomponent i kiselkarbid
TW200742096A (en) Semiconductor device
JP2014011233A (ja) 保護回路
TW200731506A (en) Integrated circuit for programming an electrical fuse and device thereof
EP2232559A4 (en) ADJUSTABLE FIELD EFFECT RECTIFIER
WO2009017223A1 (ja) 半導体評価回路
TW200737308A (en) Semiconductor manufacturing equipment and heater
CN105576816A (zh) 切换电路
JP6498465B2 (ja) 電源切替回路及び半導体装置
JP2013090153A (ja) 半導体装置、電子装置、車両、及び過熱検出方法
EP1729345A3 (en) Semiconductor device having a diode for a rectifier circuit

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880015931.1

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08846239

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 12594038

Country of ref document: US

ENP Entry into the national phase

Ref document number: 2009540084

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08846239

Country of ref document: EP

Kind code of ref document: A1