WO2009057655A1 - 半導体発光素子およびその製造方法 - Google Patents

半導体発光素子およびその製造方法 Download PDF

Info

Publication number
WO2009057655A1
WO2009057655A1 PCT/JP2008/069682 JP2008069682W WO2009057655A1 WO 2009057655 A1 WO2009057655 A1 WO 2009057655A1 JP 2008069682 W JP2008069682 W JP 2008069682W WO 2009057655 A1 WO2009057655 A1 WO 2009057655A1
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
emitting element
layer
manufacturing
same
Prior art date
Application number
PCT/JP2008/069682
Other languages
English (en)
French (fr)
Inventor
Hideyoshi Horie
Hirohiko Hirasawa
Original Assignee
Mitsubishi Chemical Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Chemical Corporation filed Critical Mitsubishi Chemical Corporation
Priority to US12/740,481 priority Critical patent/US20100308357A1/en
Priority to EP08844428A priority patent/EP2221884A1/en
Publication of WO2009057655A1 publication Critical patent/WO2009057655A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Luminescent Compositions (AREA)
  • Led Device Packages (AREA)

Abstract

　発光素子１０は、バッファ層２２、第一導電型半導体層、活性構造２５および第二導電型半導体層を含む薄膜結晶層を有している。薄膜結晶層は、少なくとも第二導電型半導体層の一部が絶縁膜で覆われている。絶縁膜は、薄膜結晶層の結晶性を回復させる結晶品質改善層３０を有する。
PCT/JP2008/069682 2007-10-29 2008-10-29 半導体発光素子およびその製造方法 WO2009057655A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/740,481 US20100308357A1 (en) 2007-10-29 2008-10-29 Semiconductor light emitting element and method for manufacturing the same
EP08844428A EP2221884A1 (en) 2007-10-29 2008-10-29 Semiconductor light emitting element and method for manufacturing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-280229 2007-10-29
JP2007280229 2007-10-29

Publications (1)

Publication Number Publication Date
WO2009057655A1 true WO2009057655A1 (ja) 2009-05-07

Family

ID=40591044

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/069682 WO2009057655A1 (ja) 2007-10-29 2008-10-29 半導体発光素子およびその製造方法

Country Status (4)

Country Link
US (1) US20100308357A1 (ja)
EP (1) EP2221884A1 (ja)
JP (1) JP2009135466A (ja)
WO (1) WO2009057655A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110186872A1 (en) * 2010-02-04 2011-08-04 Lg Innotek Co., Ltd. Light Emitting Device Package, Method Of Manufacturing The Same, And Lighting System
US20110284822A1 (en) * 2010-05-18 2011-11-24 Seoul Semiconductor Co., Ltd. Light emitting diode chip having wavelength converting layer and method of fabricating the same, and package having the light emitting diode chip and method of fabricating the same

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101497953B1 (ko) 2008-10-01 2015-03-05 삼성전자 주식회사 광추출 효율이 향상된 발광 소자, 이를 포함하는 발광 장치, 상기 발광 소자 및 발광 장치의 제조 방법
CN101971364B (zh) 2008-11-06 2013-05-15 松下电器产业株式会社 氮化物类半导体元件及其制造方法
US8058639B2 (en) * 2009-04-06 2011-11-15 Panasonic Corporation Nitride semiconductor element and method for production thereof
US9048385B2 (en) 2009-06-24 2015-06-02 Nichia Corporation Nitride semiconductor light emitting diode
WO2011077704A1 (ja) * 2009-12-25 2011-06-30 パナソニック株式会社 窒化物系半導体素子およびその製造方法
KR101028286B1 (ko) 2009-12-28 2011-04-11 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
JP2011233784A (ja) * 2010-04-28 2011-11-17 Mitsubishi Heavy Ind Ltd 半導体発光素子、半導体発光素子の保護膜及びその作製方法
JP5246235B2 (ja) * 2010-09-30 2013-07-24 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子の製造方法
US8765509B2 (en) 2010-09-30 2014-07-01 Toyoda Gosei Co., Ltd. Method for producing group III nitride semiconductor light-emitting device
KR101221722B1 (ko) 2011-03-04 2013-01-11 주식회사 엘지화학 전도성 구조체 및 이의 제조방법
JP5746553B2 (ja) * 2011-04-28 2015-07-08 株式会社東芝 基板加工システム、および基板加工プログラム
JP6221926B2 (ja) * 2013-05-17 2017-11-01 日亜化学工業株式会社 半導体発光素子およびその製造方法
JP6215612B2 (ja) * 2013-08-07 2017-10-18 ソニーセミコンダクタソリューションズ株式会社 発光素子、発光素子ウェーハ及び電子機器
KR20150039518A (ko) * 2013-10-02 2015-04-10 엘지이노텍 주식회사 발광소자
CN104064654B (zh) * 2014-06-18 2017-07-11 工业和信息化部电子第五研究所 形成芯片的钝化膜的方法、芯片的钝化膜的结构及芯片
CN109148670B (zh) * 2016-08-30 2020-07-24 开发晶照明（厦门）有限公司 Led倒装芯片封装基板和led封装结构
KR102553985B1 (ko) * 2017-11-16 2023-07-10 파나소닉 홀딩스 코퍼레이션 Ⅲ족 질화물 반도체
CN116169224A (zh) * 2020-03-06 2023-05-26 天津三安光电有限公司 一种倒装发光二极管

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000164938A (ja) 1998-11-27 2000-06-16 Sharp Corp 発光装置及び発光素子の実装方法
JP2000332357A (ja) * 1999-05-20 2000-11-30 Matsushita Electric Ind Co Ltd 半導体素子の製造方法
JP2002344015A (ja) 2001-05-17 2002-11-29 Nichia Chem Ind Ltd 窒化物半導体発光素子
JP3423328B2 (ja) 1991-12-09 2003-07-07 豊田合成株式会社 窒化ガリウム系化合物半導体発光素子
JP2005244245A (ja) * 2004-02-27 2005-09-08 Osram Opto Semiconductors Gmbh 発光半導体チップおよびこの種の半導体チップの製造方法
JP2005286135A (ja) * 2004-03-30 2005-10-13 Eudyna Devices Inc 半導体装置および半導体装置の製造方法
WO2006043796A1 (en) * 2004-10-22 2006-04-27 Seoul Opto-Device Co., Ltd. Gan compound semiconductor light emitting element and method of manufacturing the same
JP2006229172A (ja) * 2005-02-21 2006-08-31 Toshiba Corp 窒化物半導体レーザ装置及びその製造方法
JP2007214276A (ja) * 2006-02-08 2007-08-23 Mitsubishi Chemicals Corp 発光素子
JP2008130595A (ja) * 2006-11-16 2008-06-05 Sharp Corp 窒化物半導体レーザ素子

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3423328B2 (ja) 1991-12-09 2003-07-07 豊田合成株式会社 窒化ガリウム系化合物半導体発光素子
JP2000164938A (ja) 1998-11-27 2000-06-16 Sharp Corp 発光装置及び発光素子の実装方法
JP2000332357A (ja) * 1999-05-20 2000-11-30 Matsushita Electric Ind Co Ltd 半導体素子の製造方法
JP2002344015A (ja) 2001-05-17 2002-11-29 Nichia Chem Ind Ltd 窒化物半導体発光素子
JP2005244245A (ja) * 2004-02-27 2005-09-08 Osram Opto Semiconductors Gmbh 発光半導体チップおよびこの種の半導体チップの製造方法
JP2005286135A (ja) * 2004-03-30 2005-10-13 Eudyna Devices Inc 半導体装置および半導体装置の製造方法
WO2006043796A1 (en) * 2004-10-22 2006-04-27 Seoul Opto-Device Co., Ltd. Gan compound semiconductor light emitting element and method of manufacturing the same
JP2006229172A (ja) * 2005-02-21 2006-08-31 Toshiba Corp 窒化物半導体レーザ装置及びその製造方法
JP2007214276A (ja) * 2006-02-08 2007-08-23 Mitsubishi Chemicals Corp 発光素子
JP2008130595A (ja) * 2006-11-16 2008-06-05 Sharp Corp 窒化物半導体レーザ素子

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110186872A1 (en) * 2010-02-04 2011-08-04 Lg Innotek Co., Ltd. Light Emitting Device Package, Method Of Manufacturing The Same, And Lighting System
CN102148318A (zh) * 2010-02-04 2011-08-10 Lg伊诺特有限公司 发光器件封装及其制造方法、以及照明系统
US8637893B2 (en) 2010-02-04 2014-01-28 Lg Innotek Co., Ltd. Light emitting device package, method of manufacturing the same, and lighting system
US20110284822A1 (en) * 2010-05-18 2011-11-24 Seoul Semiconductor Co., Ltd. Light emitting diode chip having wavelength converting layer and method of fabricating the same, and package having the light emitting diode chip and method of fabricating the same
US8664635B2 (en) * 2010-05-18 2014-03-04 Seoul Semiconductor Co., Ltd. Light emitting diode chip having wavelength converting layer and method of fabricating the same, and package having the light emitting diode chip and method of fabricating the same
US9419186B2 (en) 2010-05-18 2016-08-16 Seoul Semiconductor Co., Ltd. Light emitting diode chip having wavelength converting layer and method of fabricating the same, and package having the light emitting diode chip and method of fabricating the same
US9793448B2 (en) 2010-05-18 2017-10-17 Seoul Semiconductor Co., Ltd. Light emitting diode chip having wavelength converting layer and method of fabricating the same, and package having the light emitting diode chip and method of fabricating the same
US10043955B2 (en) 2010-05-18 2018-08-07 Seoul Semiconductor Co., Ltd. Light emitting diode chip having wavelength converting layer and method of fabricating the same, and package having the light emitting diode chip and method of fabricating the same

Also Published As

Publication number Publication date
EP2221884A1 (en) 2010-08-25
JP2009135466A (ja) 2009-06-18
US20100308357A1 (en) 2010-12-09

Similar Documents

Publication Publication Date Title
WO2009057655A1 (ja) 半導体発光素子およびその製造方法
WO2009005894A3 (en) Non-polar ultraviolet light emitting device and method for fabricating same
WO2009066561A1 (ja) 有機エレクトロルミネッセンス装置およびその製造方法
WO2008150769A3 (en) Photovoltaic device and method of manufacturing photovoltaic devices
WO2006112995A3 (en) Glass-based semiconductor on insulator structures and methods of making same
TW200707803A (en) Nitride based semiconductor element and method for fabricating the same
WO2006104935A3 (en) Light emitting diodes and methods of fabrication
WO2008051503A3 (en) Light-emitter-based devices with lattice-mismatched semiconductor structures
EP2194587A3 (en) Light emitting device and method of manufacturing the same
TW200605399A (en) Semiconductor light emitting devices including in-plane light emitting layers
EP2080231A1 (en) Thin film solar cell and method for manufacturing thin film solar cell
EP1583148A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME
TW200731850A (en) Organic light-emitting transistor element and method for manufacturing the same
EP1873838A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
WO2007044322A3 (en) Conductive layer for biaxially oriented semiconductor film growth
TW200705017A (en) Wire structure, method for fabricating wire, thin film transistor substrate, and method for fabricating the thin film transistor substrate
EP1921679A3 (en) Organic light emitting display and fabrication method thereof
WO2008126449A1 (ja) 複合型有機発光トランジスタ素子およびその製造方法
TW200709427A (en) Wire structure, a method for fabricating a wire, a thin film transistor substrate, and a method for fabricating the thin film transistor substrate
WO2007078686A3 (en) Method of polishing a semiconductor-on-insulator structure
WO2009028453A1 (ja) 薄膜トランジスタ
TW200717777A (en) Semiconductor memory device and manufacturing method thereof
WO2008156294A3 (en) Semiconductor light emitting device and method of fabricating the same
WO2008087763A1 (ja) 半導体装置およびその製造方法
WO2008142873A1 (ja) 半導体装置及びその製造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08844428

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 12740481

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2008844428

Country of ref document: EP