WO2009051075A1 - 透明導電膜およびその製造方法 - Google Patents

透明導電膜およびその製造方法 Download PDF

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Publication number
WO2009051075A1
WO2009051075A1 PCT/JP2008/068460 JP2008068460W WO2009051075A1 WO 2009051075 A1 WO2009051075 A1 WO 2009051075A1 JP 2008068460 W JP2008068460 W JP 2008068460W WO 2009051075 A1 WO2009051075 A1 WO 2009051075A1
Authority
WO
WIPO (PCT)
Prior art keywords
producing
same
film
conducive film
transparent conducive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/068460
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
Toshiro Kuji
Masafumi Chiba
Takamitsu Honjo
Koichiro Kotoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AISEKKU NANO TYUBU CO Ltd
Tokai University Educational System
Original Assignee
AISEKKU NANO TYUBU CO Ltd
Tokai University Educational System
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AISEKKU NANO TYUBU CO Ltd, Tokai University Educational System filed Critical AISEKKU NANO TYUBU CO Ltd
Priority to EP08840743A priority Critical patent/EP2228805A4/en
Priority to US12/682,971 priority patent/US20100227176A1/en
Priority to CN2008801121097A priority patent/CN101821819B/zh
Publication of WO2009051075A1 publication Critical patent/WO2009051075A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0635—Carbides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Non-Insulated Conductors (AREA)
  • Laminated Bodies (AREA)
PCT/JP2008/068460 2007-10-15 2008-10-10 透明導電膜およびその製造方法 Ceased WO2009051075A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP08840743A EP2228805A4 (en) 2007-10-15 2008-10-10 TRANSPARENT CONDUCTIVE FILM AND METHOD FOR THE PRODUCTION THEREOF
US12/682,971 US20100227176A1 (en) 2007-10-15 2008-10-10 Transparent Conductive Film and Method for Manufacturing the Same
CN2008801121097A CN101821819B (zh) 2007-10-15 2008-10-10 透明导电膜及其制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007268343A JP5224438B2 (ja) 2007-10-15 2007-10-15 透明導電膜およびその製造方法
JP2007-268343 2007-10-15

Publications (1)

Publication Number Publication Date
WO2009051075A1 true WO2009051075A1 (ja) 2009-04-23

Family

ID=40567342

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/068460 Ceased WO2009051075A1 (ja) 2007-10-15 2008-10-10 透明導電膜およびその製造方法

Country Status (8)

Country Link
US (1) US20100227176A1 (https=)
EP (1) EP2228805A4 (https=)
JP (1) JP5224438B2 (https=)
KR (1) KR20100075622A (https=)
CN (1) CN101821819B (https=)
SG (1) SG185923A1 (https=)
TW (1) TWI466136B (https=)
WO (1) WO2009051075A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5881995B2 (ja) * 2011-08-26 2016-03-09 久慈　俊郎 透明導電膜及びその製造方法
CN108321239A (zh) * 2017-12-21 2018-07-24 君泰创新（北京）科技有限公司 一种太阳能异质结电池及其制备方法
JP2019173048A (ja) * 2018-03-26 2019-10-10 Ｊｘ金属株式会社 スパッタリングターゲット部材及びその製造方法
CN115171958B (zh) * 2018-07-30 2025-08-15 旭化成株式会社 导电性薄膜、以及使用了其的导电性薄膜卷、电子纸、触摸面板和平板显示器

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03183759A (ja) * 1989-12-12 1991-08-09 Toyobo Co Ltd 積層プラスチックフイルムおよびその製造方法
JP2000353426A (ja) * 1999-04-08 2000-12-19 Teijin Ltd 透明導電性フィルム
JP2004011014A (ja) * 2002-06-11 2004-01-15 Konica Minolta Holdings Inc 金属原子含有膜、金属原子含有膜材料及び金属原子含有膜の形成方法
JP2004179139A (ja) 2002-09-30 2004-06-24 Sumitomo Osaka Cement Co Ltd 導電性粒子とそれを含有する導電性接着材料及び透明導電膜形成用塗料及びそれを用いた透明導電膜並びに表示装置
WO2005061757A1 (ja) 2003-12-24 2005-07-07 Konica Minolta Holdings, Inc. フッ化マグネシウム薄膜の製造方法、フッ化マグネシウム薄膜、積層膜、透明プラスチックフィルム、および有機ｅｌ素子

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0924777A3 (en) * 1997-10-15 1999-07-07 Canon Kabushiki Kaisha A method for the formation of an indium oxide film by electro deposition process or electroless deposition process, a substrate provided with said indium oxide film for a semiconductor element, and a semiconductor element provided with said substrate
WO2005041240A1 (ja) * 2003-09-26 2005-05-06 Matsushita Electric Industrial Co., Ltd. プラズマディスプレイパネル
CN1957425A (zh) * 2004-05-21 2007-05-02 Tdk株式会社 透明导电材料、透明导电膏、透明导电膜和透明电极
WO2006030762A1 (ja) * 2004-09-13 2006-03-23 Sumitomo Metal Mining Co., Ltd. 透明導電膜及びその製造方法、並びに透明導電性基材、発光デバイス

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03183759A (ja) * 1989-12-12 1991-08-09 Toyobo Co Ltd 積層プラスチックフイルムおよびその製造方法
JP2000353426A (ja) * 1999-04-08 2000-12-19 Teijin Ltd 透明導電性フィルム
JP2004011014A (ja) * 2002-06-11 2004-01-15 Konica Minolta Holdings Inc 金属原子含有膜、金属原子含有膜材料及び金属原子含有膜の形成方法
JP2004179139A (ja) 2002-09-30 2004-06-24 Sumitomo Osaka Cement Co Ltd 導電性粒子とそれを含有する導電性接着材料及び透明導電膜形成用塗料及びそれを用いた透明導電膜並びに表示装置
WO2005061757A1 (ja) 2003-12-24 2005-07-07 Konica Minolta Holdings, Inc. フッ化マグネシウム薄膜の製造方法、フッ化マグネシウム薄膜、積層膜、透明プラスチックフィルム、および有機ｅｌ素子

Also Published As

Publication number Publication date
EP2228805A4 (en) 2012-08-22
CN101821819B (zh) 2012-07-25
JP2009099327A (ja) 2009-05-07
EP2228805A1 (en) 2010-09-15
JP5224438B2 (ja) 2013-07-03
KR20100075622A (ko) 2010-07-02
CN101821819A (zh) 2010-09-01
US20100227176A1 (en) 2010-09-09
TWI466136B (zh) 2014-12-21
TW200923974A (en) 2009-06-01
SG185923A1 (en) 2012-12-28

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