WO2009049526A1 - Diode électroluminescente blanche - Google Patents

Diode électroluminescente blanche Download PDF

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Publication number
WO2009049526A1
WO2009049526A1 PCT/CN2008/072591 CN2008072591W WO2009049526A1 WO 2009049526 A1 WO2009049526 A1 WO 2009049526A1 CN 2008072591 W CN2008072591 W CN 2008072591W WO 2009049526 A1 WO2009049526 A1 WO 2009049526A1
Authority
WO
WIPO (PCT)
Prior art keywords
transparent
blue
emitting diode
light
violet
Prior art date
Application number
PCT/CN2008/072591
Other languages
English (en)
Chinese (zh)
Inventor
Ze Chen
Original Assignee
Ze Chen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ze Chen filed Critical Ze Chen
Publication of WO2009049526A1 publication Critical patent/WO2009049526A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers

Definitions

  • the present invention relates to a light emitting diode (LED), and more particularly to a white light emitting diode.
  • LED light emitting diode
  • the existing white light emitting diode (LED) which converts blue light or violet light into white light is an electrode holder, a chip and a bracket made of a solid epoxy resin shell, an LED blue light or a violet light chip, a light emitting diode chip supporting the two electrodes and an epoxy resin insulator.
  • the connecting wire is composed of a fluorescent color powder coating coated on the light emitting end of the blue or violet chip and covering the chip.
  • the transparent transparent light-transmissive shell and the LED bracket and other devices are subjected to gapless potting, because the fluorescent color-changing powder coating is applied on the light-emitting end of the chip to cover the chip without gaps, and the blue or purple light and the fluorescent color-changing powder emitted by the chip are used.
  • the emitted light complements to form white light.
  • the existing white LEDs due to the continuous improvement of the power of the chip, the luminous intensity is continuously enhanced, and the heat conduction and heat dissipation problem of the chip itself has been prominent, and the chip is covered in the fluorescent color powder coating by the gapless cover.
  • the outer heat dissipation channel is blocked to deteriorate the heat conduction and heat conduction condition of the chip, and the transparent outer casing is encapsulated with epoxy resin.
  • UV ultraviolet irradiation
  • the luminescence intensity is continuously weakened due to the generation of light decay. (There is data showing that the white LED has a light decay of 35% when used in 4000 hours due to UV action), so it is necessary to make further improvements to the above white LED.
  • the object of the present invention is to adopt a new white light forming technical scheme for a white light emitting diode which is mainly used for converting blue light or violet light into white light, and provide a production process which is basically the same as the production process of the existing miniature light bulb, and is more sure.
  • New manufacturing technology for improving the thermal conductivity of the chip, eliminating the defect that the current product is susceptible to aging under the action of UV, and converting the blue or violet light into a white light-emitting diode, while reducing the manufacturing process.
  • the white light emitting diode which the blue light or the violet light which I invented is converted into white light has a hollow transparent transparent shell, and the LED electrode holder adopts a physical composite material, and the reflective anode of the LED negative electrode is provided with a reflective coating, and the chip is connected with the bracket electrode. Line and phosphor powder coating.
  • the blue-emitting or violet-emitting LED chip is completely contained in the concave surface of the transparent light-transmitting outer casing, and the LED chip emitting light blue or violet light is mounted in the negative electrode boss of the electrode holder, and the chip and the bracket electrode connecting line will be
  • the positive and negative electrodes of the LED chip emitting blue or violet light in the light emitting diode are connected to the positive and negative electrodes of the physical composite material support, and the phosphor color changing coating is uniformly applied to the concave surface of the transparent light transmissive outer casing.
  • the transparent light-transmissive outer casing is made of glass, and may be made of other transparent and transparent chemical materials.
  • the invention is produced by the following method: firstly placing the LED physical composite material electrode holder on the solid crystal dispensing machine, uniformly applying the silver glue to the boss pit of the bracket, and then using the clamp to emit blue or violet light. After the LED chip is expanded and the crystal grains are opened, the crystal grains are placed on the surface of the silver paste of the pit pits, and the wire bonding connection between the two electrodes on the chip and the external electrode of the bracket is realized on the wire bonding machine (ultrasonic bonding) , then the hollow insulation is transparent
  • the light-transmissive outer casing is placed on a coating machine, and the concave or convex portion of the hollow transparent transparent outer casing is uniformly coated with the blue-light or violet light-emitting portion of the blue or violet light-emitting portion, and the fluorescent color-changing powder is evenly coated and dried.
  • the light-emitting diode electrode holder for realizing the solid-crystal wire bonding and the transparent transparent transparent light-transmitting outer casing are automatically assembled and sealed by a glue injection machine or a sealing machine to complete the production of the white light-emitting diode of the present invention.
  • the hollow transparent light-transmissive outer casing may be glass, but may also be made of other transparent light-transmissive chemical materials.
  • the use of a glass casing is preferred because the glass's UV resistance is much superior to other transparent light-transmissive materials.
  • the invention has the beneficial effects that: the fluorescent color change powder coating is the concave surface of the transparent insulating shell to be coated, so that the LED chip which no longer contains the blue or violet light without gaps is improved.
  • the heat dissipation condition of the chip and the high heat transfer material of the physical composite material support, the heat generated by the chip light is quickly transmitted to the outside of the casing, so that the LED chip emitting blue or violet light is prolonged under the premise of the same power, and the light is emitted.
  • the strength is improved.
  • the transparent light-transmissive casing is made of glass, and the reflective separator surface is provided with a reflective layer to make the inner cavity into a vacuum state, the blue-emitting or violet-emitting LED chip works better, and the phosphor is less likely to be oxidized and aged. Therefore, its life will increase and the luminous intensity will increase.
  • FIG. 1 is a structural view of a white light emitting diode in an embodiment.
  • the white light emitting diode in this embodiment is an LED electrode holder 1 made of a physical composite material, an insulating separator bead with a reflective coating, a transparent transparent shell 3, a fluorescent color changing powder 4, a chip and a support electrode connection line 5, a blue or violet LED chip 6, a reflective and thermal conductive coating 7, a silver paste 8, the blue or violet LED chip 6 is placed on the surface of the silver paste 8, that is, blue or violet light
  • the LED chip 6 is placed at the center of the lens of the transparent light transmissive housing 3.
  • the chip and the bracket electrode connection line 5 are respectively ultrasonically connected to the positive and negative columns of the LED physical composite electrode holder 1 and the positive and negative electrodes of the chip, and the insulating separation beads 2 with the reflective coating are insulated to separate the two external lead leads.
  • the light emitted from the LED chip 6 emitting blue or violet light is reflected to the light emitting end.
  • the concave surface of the scattered light portion of the transparent light-transmissive casing 3 is completely contained by the fluorescent color powder 4, that is, the blue or purple light emitted by the blue-emitting or violet-emitting LED chip 6 must be complemented by the fluorescent color-changing powder 3 coating. White light then scatters outward.
  • the hollow transparent transparent shell 3 coated with the fluorescent color changing powder on the concave surface is covered on the white LED semi-finished product prepared by the physical composite material electrode holder and equipped with the LED chip 6 emitting blue or violet light and performing electrode connection. After the fixing is carried out, the manufacture of the white LED product of the present invention is achieved.
  • the surface of the land recess is provided with a reflective and thermally conductive coating 7.
  • the transparent transparent outer casing 3 may be an epoxy resin outer casing, and the insulating separation beads with the reflective coating are glass beads. If the transparent light-transmissive casing 3 is made of glass, and the insulating separator bead 2 is coated with a reflective coating, the defect of aging and blackening of the casing under the action of UV and the output efficiency of the light emitted by the chip are further improved. It is more conducive to the use of the product outdoors to form a new embodiment.

Abstract

L'invention porte sur une diode électroluminescente (DEL) blanche, qui comprend : un support d'électrode (1) fait de matériau composite physique, une bille d'écartement isolante (2), un capuchon transparent (3), une puce DEL (6) pour émettre de la lumière bleue ou violette, de la colle à l'argent (8) pour faire adhérer la puce DEL (6) dans le culot sur la partie supérieure du support d'électrode (1) et un fil de connexion (5) pour la connexion de la puce DEL (6) et du support d'électrode (1). La diode électroluminescente blanche est caractérisée par le fait que : une couche de poudre fluorescente (4) est revêtue sur la surface interne du capuchon transparent (3), la couche de poudre fluorescente (4) complète la lumière bleue ou violette émise par la puce DEL (6) par la lumière émise par la poudre fluorescente afin de former la lumière blanche. En outre, le capuchon transparent (3) est fait de verre et la surface de la bille d'écartement isolante (2) est revêtue d'une couche réfléchissante (7).
PCT/CN2008/072591 2007-10-08 2008-09-28 Diode électroluminescente blanche WO2009049526A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN200710050164.5 2007-10-08
CNA2007100501645A CN101140973A (zh) 2007-10-08 2007-10-08 白光发光二极管

Publications (1)

Publication Number Publication Date
WO2009049526A1 true WO2009049526A1 (fr) 2009-04-23

Family

ID=39192803

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2008/072591 WO2009049526A1 (fr) 2007-10-08 2008-09-28 Diode électroluminescente blanche

Country Status (2)

Country Link
CN (1) CN101140973A (fr)
WO (1) WO2009049526A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101140973A (zh) * 2007-10-08 2008-03-12 陈泽 白光发光二极管
CN101964384A (zh) * 2010-08-19 2011-02-02 深圳市佳比泰电子科技有限公司 一种led荧光粉的涂覆方法
CN102606919A (zh) * 2012-03-02 2012-07-25 李建营 一种提高led管亮度的方法及高亮度led管
CN104409606A (zh) * 2014-12-09 2015-03-11 苏州科利亚照明科技有限公司 一种发光装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2454896Y (zh) * 2000-12-07 2001-10-17 叶昭钦 灯的改良构造
US20060132011A1 (en) * 2003-05-30 2006-06-22 Mitsubishi Chemical Corporation Light emitting device
CN101140973A (zh) * 2007-10-08 2008-03-12 陈泽 白光发光二极管
CN201117677Y (zh) * 2007-10-18 2008-09-17 陈泽 白光发光二极管

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2454896Y (zh) * 2000-12-07 2001-10-17 叶昭钦 灯的改良构造
US20060132011A1 (en) * 2003-05-30 2006-06-22 Mitsubishi Chemical Corporation Light emitting device
CN101140973A (zh) * 2007-10-08 2008-03-12 陈泽 白光发光二极管
CN201117677Y (zh) * 2007-10-18 2008-09-17 陈泽 白光发光二极管

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