WO2009044651A1 - 液化アンモニアの充填方法、窒化物結晶の製造方法、および、窒化物結晶成長用反応容器 - Google Patents

液化アンモニアの充填方法、窒化物結晶の製造方法、および、窒化物結晶成長用反応容器 Download PDF

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Publication number
WO2009044651A1
WO2009044651A1 PCT/JP2008/067172 JP2008067172W WO2009044651A1 WO 2009044651 A1 WO2009044651 A1 WO 2009044651A1 JP 2008067172 W JP2008067172 W JP 2008067172W WO 2009044651 A1 WO2009044651 A1 WO 2009044651A1
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WO
WIPO (PCT)
Prior art keywords
ammonia
nitride crystals
liquefied
condenser
feeding
Prior art date
Application number
PCT/JP2008/067172
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English (en)
French (fr)
Inventor
Yuuichi Katou
Takao Watanabe
Kazunori Hiruta
Original Assignee
Mitsubishi Chemical Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Chemical Corporation filed Critical Mitsubishi Chemical Corporation
Priority to CN200880109843.8A priority Critical patent/CN101820990B/zh
Priority to US12/681,517 priority patent/US8721788B2/en
Priority to EP08835301.6A priority patent/EP2210660B1/en
Publication of WO2009044651A1 publication Critical patent/WO2009044651A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1096—Apparatus for crystallization from liquid or supercritical state including pressurized crystallization means [e.g., hydrothermal]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Filling Or Discharging Of Gas Storage Vessels (AREA)

Abstract

　凝縮器にガスアンモニアを供給する供給工程と、凝縮器においてガスアンモニアを液化アンモニアにする液化工程と、凝縮器において生じた液化アンモニアを容器に供給して、容器内に液化アンモニアを充填する充填工程とを順に実施する液化アンモニアの充填方法において、液化工程と充填工程の間において、凝縮器において生じた液化アンモニアを容器に供給し、液化アンモニアの気化による潜熱によって容器を冷却する冷却工程と、冷却工程において液化アンモニアの気化によって生じたガスアンモニアを凝縮器に供給する循環工程を実施する。
PCT/JP2008/067172 2007-10-05 2008-09-24 液化アンモニアの充填方法、窒化物結晶の製造方法、および、窒化物結晶成長用反応容器 WO2009044651A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN200880109843.8A CN101820990B (zh) 2007-10-05 2008-09-24 液氨的填充方法、氮化物结晶的制造方法以及氮化物结晶生长用反应容器
US12/681,517 US8721788B2 (en) 2007-10-05 2008-09-24 Method for charging with liquefied ammonia, method for producing nitride crystal, and reactor for growth of nitride crystal
EP08835301.6A EP2210660B1 (en) 2007-10-05 2008-09-24 PROCESS FOR CHARGING LIQUEFIED AMMONIA and PROCESS FOR PRODUCTION OF NITRIDE CRYSTALS

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007262751 2007-10-05
JP2007262752 2007-10-05
JP2007-262751 2007-10-05
JP2007-262752 2007-10-05

Publications (1)

Publication Number Publication Date
WO2009044651A1 true WO2009044651A1 (ja) 2009-04-09

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PCT/JP2008/067172 WO2009044651A1 (ja) 2007-10-05 2008-09-24 液化アンモニアの充填方法、窒化物結晶の製造方法、および、窒化物結晶成長用反応容器

Country Status (5)

Country Link
US (1) US8721788B2 (ja)
EP (1) EP2210660B1 (ja)
KR (1) KR20100082769A (ja)
CN (1) CN101820990B (ja)
WO (1) WO2009044651A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014062023A (ja) * 2011-10-28 2014-04-10 Mitsubishi Chemicals Corp 窒化物結晶の製造方法
US9518337B2 (en) 2011-10-28 2016-12-13 Mitsubishi Chemical Corporation Method for producing nitride crystal and nitride crystal

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KR20110112278A (ko) * 2009-01-08 2011-10-12 미쓰비시 가가꾸 가부시키가이샤 질화물 결정의 제조 방법, 질화물 결정 및 그 제조 장치
JP2012012259A (ja) * 2010-07-01 2012-01-19 Ricoh Co Ltd 窒化物結晶およびその製造方法
WO2015031794A2 (en) * 2013-08-30 2015-03-05 The Regents Of The University Of California Reactor vessels for ammonothermal and flux-based growth of group-iii nitride crystals
CN103526282A (zh) * 2013-10-22 2014-01-22 北京大学东莞光电研究院 一种生长氮化物单晶体材料的装置及方法
CN105371541B (zh) * 2014-08-28 2018-06-26 上海海立电器有限公司 冷媒注入装置和冷媒注入方法
JP6615663B2 (ja) * 2016-03-22 2019-12-04 住友重機械工業株式会社 クライオポンプ、クライオポンプ吸蔵ガス量推測装置及びクライオポンプ吸蔵ガス量推測方法
CN106319629A (zh) * 2016-09-19 2017-01-11 中原特钢股份有限公司 一种用于生产氮化镓晶体的超高压容器
CN106838607A (zh) * 2016-12-15 2017-06-13 吉林省众鑫汽车装备有限公司 固体储氨罐的充氨方法
CN108636115B (zh) * 2018-04-11 2020-06-12 上海交通大学 基于lng冷能的氨源充注系统
CN108870077B (zh) * 2018-08-13 2024-04-09 浙江英德赛半导体材料股份有限公司 高纯氨钢瓶/槽车残液批量处理系统及方法
CN114263848B (zh) * 2020-09-16 2023-09-26 重庆川维物流有限公司 一种液氨槽车装车的低压氨气吹扫装置及其使用方法

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014062023A (ja) * 2011-10-28 2014-04-10 Mitsubishi Chemicals Corp 窒化物結晶の製造方法
US9518337B2 (en) 2011-10-28 2016-12-13 Mitsubishi Chemical Corporation Method for producing nitride crystal and nitride crystal
US10526726B2 (en) 2011-10-28 2020-01-07 Mitsubishi Chemical Corporation Method for producing nitride crystal and nitride crystal
US11162190B2 (en) 2011-10-28 2021-11-02 Mitsubishi Chemical Corporation Method for producing nitride crystal and nitride crystal

Also Published As

Publication number Publication date
EP2210660A1 (en) 2010-07-28
CN101820990A (zh) 2010-09-01
EP2210660B1 (en) 2018-07-04
EP2210660A4 (en) 2014-06-11
KR20100082769A (ko) 2010-07-19
US20100294195A1 (en) 2010-11-25
CN101820990B (zh) 2013-06-12
US8721788B2 (en) 2014-05-13

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