WO2009044609A1 - 磁気抵抗記憶素子、磁気抵抗記憶装置及び磁気抵抗記憶装置の動作方法 - Google Patents

磁気抵抗記憶素子、磁気抵抗記憶装置及び磁気抵抗記憶装置の動作方法 Download PDF

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Publication number
WO2009044609A1
WO2009044609A1 PCT/JP2008/066289 JP2008066289W WO2009044609A1 WO 2009044609 A1 WO2009044609 A1 WO 2009044609A1 JP 2008066289 W JP2008066289 W JP 2008066289W WO 2009044609 A1 WO2009044609 A1 WO 2009044609A1
Authority
WO
WIPO (PCT)
Prior art keywords
magnetoresistive
magnetic body
storage device
random access
access memory
Prior art date
Application number
PCT/JP2008/066289
Other languages
English (en)
French (fr)
Inventor
Yuukou Katou
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Priority to JP2009536003A priority Critical patent/JPWO2009044609A1/ja
Publication of WO2009044609A1 publication Critical patent/WO2009044609A1/ja

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Magnetic Heads (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)

Abstract

　磁気抵抗記憶素子は、第１の磁性体１と、第２の磁性体３と、第１のトンネル絶縁体２と、第３の磁性体５と、第２のトンネル絶縁体４とを備える。第１の磁性体１は、磁化方向を固定されている。第２の磁性体３は、データにより磁化状態が変化する。第１のトンネル絶縁体２は、第１の磁性体１と第２の磁性体３との間に設けられている。第３の磁性体５は、データの書込み時と読出し時とで磁化状態が異なりかつ磁気異方性が第２の磁性体３の磁気異方性より小さい。第２のトンネル絶縁体４は、第２の磁性体３と第３の磁性体５との間に設けられている。
PCT/JP2008/066289 2007-10-02 2008-09-10 磁気抵抗記憶素子、磁気抵抗記憶装置及び磁気抵抗記憶装置の動作方法 WO2009044609A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009536003A JPWO2009044609A1 (ja) 2007-10-02 2008-09-10 磁気抵抗記憶素子、磁気抵抗記憶装置及び磁気抵抗記憶装置の動作方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007258479 2007-10-02
JP2007-258479 2007-10-02

Publications (1)

Publication Number Publication Date
WO2009044609A1 true WO2009044609A1 (ja) 2009-04-09

Family

ID=40526038

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/066289 WO2009044609A1 (ja) 2007-10-02 2008-09-10 磁気抵抗記憶素子、磁気抵抗記憶装置及び磁気抵抗記憶装置の動作方法

Country Status (2)

Country Link
JP (1) JPWO2009044609A1 (ja)
WO (1) WO2009044609A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014120707A (ja) * 2012-12-19 2014-06-30 Samsung Electronics Co Ltd 改良型特性を有する磁気接合を提供する方法およびシステム
CN113508469A (zh) * 2019-03-06 2021-10-15 国际商业机器公司 基于磁畴壁的非易失性、线性和双向突触权重元件

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002261352A (ja) * 2000-12-07 2002-09-13 Commiss Energ Atom 記憶機能を有する磁気スピン極性化および磁化回転装置および当該装置を用いた書き込み方法
JP2007123455A (ja) * 2005-10-27 2007-05-17 Renesas Technology Corp 半導体記憶装置
JP2007150265A (ja) * 2005-10-28 2007-06-14 Toshiba Corp 磁気抵抗効果素子および磁気記憶装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002261352A (ja) * 2000-12-07 2002-09-13 Commiss Energ Atom 記憶機能を有する磁気スピン極性化および磁化回転装置および当該装置を用いた書き込み方法
JP2007123455A (ja) * 2005-10-27 2007-05-17 Renesas Technology Corp 半導体記憶装置
JP2007150265A (ja) * 2005-10-28 2007-06-14 Toshiba Corp 磁気抵抗効果素子および磁気記憶装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014120707A (ja) * 2012-12-19 2014-06-30 Samsung Electronics Co Ltd 改良型特性を有する磁気接合を提供する方法およびシステム
CN113508469A (zh) * 2019-03-06 2021-10-15 国际商业机器公司 基于磁畴壁的非易失性、线性和双向突触权重元件
JP2022522128A (ja) * 2019-03-06 2022-04-14 インターナショナル・ビジネス・マシーンズ・コーポレーション 磁壁ベースの不揮発性、線形、かつ双方向性のシナプス重み素子
JP7488005B2 (ja) 2019-03-06 2024-05-21 インターナショナル・ビジネス・マシーンズ・コーポレーション 磁壁ベースの不揮発性、線形、かつ双方向性のシナプス重み素子

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