WO2009041658A1 - 太陽電池用基板および太陽電池 - Google Patents

太陽電池用基板および太陽電池 Download PDF

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Publication number
WO2009041658A1
WO2009041658A1 PCT/JP2008/067557 JP2008067557W WO2009041658A1 WO 2009041658 A1 WO2009041658 A1 WO 2009041658A1 JP 2008067557 W JP2008067557 W JP 2008067557W WO 2009041658 A1 WO2009041658 A1 WO 2009041658A1
Authority
WO
WIPO (PCT)
Prior art keywords
solar cell
substrate
disclosed
coating film
oxide coating
Prior art date
Application number
PCT/JP2008/067557
Other languages
English (en)
French (fr)
Inventor
Haruo Yago
Naruhiko Aono
Youichi Hosoya
Tadanobu Sato
Original Assignee
Fujifilm Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corporation filed Critical Fujifilm Corporation
Priority to US12/680,499 priority Critical patent/US20100229936A1/en
Priority to EP08834094A priority patent/EP2197038A1/en
Publication of WO2009041658A1 publication Critical patent/WO2009041658A1/ja

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

　金属基板上に陽極酸化皮膜を有する太陽電池用基板であって、前記陽極酸化皮膜の表面に形成された細孔の直径が１０ｎｍ～６００ｎｍである太陽電池用基板、及びそれを用いた太陽電池。
PCT/JP2008/067557 2007-09-28 2008-09-26 太陽電池用基板および太陽電池 WO2009041658A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/680,499 US20100229936A1 (en) 2007-09-28 2008-09-26 Substrate for solar cell and solar cell
EP08834094A EP2197038A1 (en) 2007-09-28 2008-09-26 Substrate for solar cell and solar cell

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007255657 2007-09-28
JP2007-255657 2007-09-28
JP2008088957 2008-03-30
JP2008-088957 2008-03-30

Publications (1)

Publication Number Publication Date
WO2009041658A1 true WO2009041658A1 (ja) 2009-04-02

Family

ID=40511538

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/067557 WO2009041658A1 (ja) 2007-09-28 2008-09-26 太陽電池用基板および太陽電池

Country Status (4)

Country Link
US (1) US20100229936A1 (ja)
EP (1) EP2197038A1 (ja)
JP (1) JP2009267335A (ja)
WO (1) WO2009041658A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010258255A (ja) * 2009-04-27 2010-11-11 Fujifilm Corp 陽極酸化基板、それを用いた光電変換素子の製造方法、光電変換素子及び太陽電池

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4700130B1 (ja) * 2010-02-01 2011-06-15 富士フイルム株式会社 絶縁性金属基板および半導体装置
US20130081692A1 (en) * 2010-03-19 2013-04-04 Tokyo Institute Of Technology Solar cell having porous structure in which metal nanoparticles are carried in pores
US8709860B2 (en) 2010-04-14 2014-04-29 Kyocera Corporation Method for manufacturing photoelectric conversion device
KR101172186B1 (ko) * 2010-10-05 2012-08-07 엘지이노텍 주식회사 태양광 발전장치 및 이의 제조방법
TWI538235B (zh) * 2011-04-19 2016-06-11 弗里松股份有限公司 薄膜光伏打裝置及製造方法
WO2013000026A1 (en) * 2011-06-30 2013-01-03 Newsouth Innovations Pty Limited Dielectric structures in solar cells
US8770262B2 (en) * 2011-08-11 2014-07-08 Hong Fu Jin Precision Industry (Shenzhen) Co., Ltd. Stainless steel-and-amorphous alloy composite and method for manufacturing
US8822816B2 (en) * 2012-06-27 2014-09-02 International Business Machines Corporation Niobium thin film stress relieving layer for thin-film solar cells
US9496422B2 (en) 2012-07-30 2016-11-15 Globalfoundries Inc. Multi-element packaging of concentrator photovoltaic cells
TWI478405B (zh) 2012-12-13 2015-03-21 Ind Tech Res Inst 熱電薄膜結構
TWI677105B (zh) 2014-05-23 2019-11-11 瑞士商弗里松股份有限公司 製造薄膜光電子裝置之方法及可藉由該方法獲得的薄膜光電子裝置
TWI661991B (zh) 2014-09-18 2019-06-11 瑞士商弗里松股份有限公司 用於製造薄膜裝置之自組裝圖案化
EP3414780B1 (en) 2016-02-11 2020-12-02 Flisom AG Fabricating thin-film optoelectronic devices with added rubidium and/or cesium
HUE053775T2 (hu) 2016-02-11 2021-07-28 Flisom Ag Önszervezõdõ mintázódás vékonyréteg eszközök gyártására

Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6289369A (ja) * 1985-10-16 1987-04-23 Matsushita Electric Ind Co Ltd 光起電力装置
JPS63250866A (ja) * 1987-04-07 1988-10-18 Showa Alum Corp 薄膜太陽電池用基板の製造方法
JP2000017499A (ja) 1998-06-26 2000-01-18 Fuji Photo Film Co Ltd 帯状金属板の電解装置
JP2000286432A (ja) * 1999-03-30 2000-10-13 Toshiba Corp 太陽電池素子用基板、太陽電池素子及び太陽電池素子の製造方法
JP2000349320A (ja) 1999-06-08 2000-12-15 Kobe Steel Ltd 耐電圧特性に優れたＡｌ合金製絶縁材料およびその製造方法
JP2001140100A (ja) 1999-11-12 2001-05-22 Fuji Photo Film Co Ltd 金属板電解処理装置及び金属板電解処理用電極
WO2003007386A1 (en) * 2001-07-13 2003-01-23 Midwest Research Institute Thin-film solar cell fabricated on a flexible metallic substrate
JP2006029503A (ja) 2004-07-20 2006-02-02 Inaba Denki Sangyo Co Ltd ダクト継手
JP2006080370A (ja) 2004-09-10 2006-03-23 Matsushita Electric Ind Co Ltd 太陽電池
JP2006136782A (ja) * 2004-11-11 2006-06-01 Asahi Kasei Chemicals Corp 光触媒アルミニウム部材
JP2007030146A (ja) * 2005-07-29 2007-02-08 Fujifilm Corp ナノ構造体の製造方法
JP2007250376A (ja) * 2006-03-16 2007-09-27 Nippon Foil Mfg Co Ltd リチウムイオン電池の集電体用アルミニウム箔及びそれを用いたリチウムイオン電池
JP2007255657A (ja) 2006-03-24 2007-10-04 Sekisui Chem Co Ltd 鞘管工法用パイプ
JP2008088957A (ja) 2006-10-05 2008-04-17 Matsushita Electric Ind Co Ltd 蒸気タービン

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2741954A1 (de) * 1977-09-17 1979-03-29 Karl Hertel Verfahren zur herstellung von solarzellen
US7053294B2 (en) * 2001-07-13 2006-05-30 Midwest Research Institute Thin-film solar cell fabricated on a flexible metallic substrate
US20060207647A1 (en) * 2005-03-16 2006-09-21 General Electric Company High efficiency inorganic nanorod-enhanced photovoltaic devices
EP1715085B1 (en) * 2005-04-18 2013-04-03 FUJIFILM Corporation Method for producing anodized structure
EP1897147A4 (en) * 2005-06-17 2010-08-18 Illuminex Corp PHOTOVOLTAIC WIRE

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6289369A (ja) * 1985-10-16 1987-04-23 Matsushita Electric Ind Co Ltd 光起電力装置
JPS63250866A (ja) * 1987-04-07 1988-10-18 Showa Alum Corp 薄膜太陽電池用基板の製造方法
JP2000017499A (ja) 1998-06-26 2000-01-18 Fuji Photo Film Co Ltd 帯状金属板の電解装置
JP2000286432A (ja) * 1999-03-30 2000-10-13 Toshiba Corp 太陽電池素子用基板、太陽電池素子及び太陽電池素子の製造方法
JP2000349320A (ja) 1999-06-08 2000-12-15 Kobe Steel Ltd 耐電圧特性に優れたＡｌ合金製絶縁材料およびその製造方法
JP2001140100A (ja) 1999-11-12 2001-05-22 Fuji Photo Film Co Ltd 金属板電解処理装置及び金属板電解処理用電極
WO2003007386A1 (en) * 2001-07-13 2003-01-23 Midwest Research Institute Thin-film solar cell fabricated on a flexible metallic substrate
JP2006029503A (ja) 2004-07-20 2006-02-02 Inaba Denki Sangyo Co Ltd ダクト継手
JP2006080370A (ja) 2004-09-10 2006-03-23 Matsushita Electric Ind Co Ltd 太陽電池
JP2006136782A (ja) * 2004-11-11 2006-06-01 Asahi Kasei Chemicals Corp 光触媒アルミニウム部材
JP2007030146A (ja) * 2005-07-29 2007-02-08 Fujifilm Corp ナノ構造体の製造方法
JP2007250376A (ja) * 2006-03-16 2007-09-27 Nippon Foil Mfg Co Ltd リチウムイオン電池の集電体用アルミニウム箔及びそれを用いたリチウムイオン電池
JP2007255657A (ja) 2006-03-24 2007-10-04 Sekisui Chem Co Ltd 鞘管工法用パイプ
JP2008088957A (ja) 2006-10-05 2008-04-17 Matsushita Electric Ind Co Ltd 蒸気タービン

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010258255A (ja) * 2009-04-27 2010-11-11 Fujifilm Corp 陽極酸化基板、それを用いた光電変換素子の製造方法、光電変換素子及び太陽電池

Also Published As

Publication number Publication date
EP2197038A1 (en) 2010-06-16
JP2009267335A (ja) 2009-11-12
US20100229936A1 (en) 2010-09-16

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