DE2741954A1 - Verfahren zur herstellung von solarzellen - Google Patents
Verfahren zur herstellung von solarzellenInfo
- Publication number
- DE2741954A1 DE2741954A1 DE19772741954 DE2741954A DE2741954A1 DE 2741954 A1 DE2741954 A1 DE 2741954A1 DE 19772741954 DE19772741954 DE 19772741954 DE 2741954 A DE2741954 A DE 2741954A DE 2741954 A1 DE2741954 A1 DE 2741954A1
- Authority
- DE
- Germany
- Prior art keywords
- solar cell
- layer
- electron beam
- pores
- junctions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011148 porous material Substances 0.000 title claims abstract description 10
- 239000004065 semiconductor Substances 0.000 title claims abstract 4
- 229910052782 aluminium Inorganic materials 0.000 title claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims description 4
- 238000010894 electron beam technology Methods 0.000 title abstract 3
- 239000004411 aluminium Substances 0.000 title 1
- 238000000151 deposition Methods 0.000 title 1
- 238000000034 method Methods 0.000 claims abstract description 4
- 238000007743 anodising Methods 0.000 claims abstract description 3
- 229910052751 metal Inorganic materials 0.000 claims abstract 2
- 239000002184 metal Substances 0.000 claims abstract 2
- 239000000463 material Substances 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 230000013011 mating Effects 0.000 claims 1
- 230000000737 periodic effect Effects 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 abstract description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 3
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/043—Mechanically stacked PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Description
- BEZEICHNUG: Verfahren zur Herstellung von
- Solarzellen.
- Die Erfindung bezieht sich auf ein Verfahren zur Her#tellung von Solarzellen. Die Funktion der bekannten Solarzellen beruht darauf, dass das auf die Oberfläche einfallende Licht, das die lichtdurchlässige Deckschicht durchdringt, von oben her auf die Gleichrichterschichten einwirkt. Infolgedessen ist der erreichbare Wirkungsgrad relativ klein, weil höchstens zwei Paare von PN-Schichten, die je einen Gleichrichter bilden, nacheinander von dem Licht durchdrungen und damit für die Spannungsabgabe nutzbar gemacht werden können.
- Der Erfindung liegt die Aufgabe zugrunde, eine Solarzelle neuer Art zu schaffen, die einen beträchtlich höheren Wirkungsgrad aufweist.
- Diese Aufgabe wird erfindungsgemäss mit Hilfe des in dem Patentanspruch gekennzeichneten Verfahrens gelöst.
- Die Erfindung beruht auf der Ausnutzung des Umstandes, dass durch Eloxieren erzeugte Aluminiumoxydschichten durchgehende Poren aufweisen, die einen Durchmesser von 0,01 bis 0,05/u haben und ungefähr 15 % der eloxierten Oberfläche bzw. des Volumens der eloxierten Schicht einnehmen. Es wurde gefunden, dass es daher möglich ist, durch auf das Plättchen einfallendes Licht die durchgehenden Poren der lichtdurchlässigen Eloxierschicht auf ihrer ganzen Tiefe und infolge der unvermeidlichen Lichtstreuung auch auf ihrem ganzen Umfang zu bestrahlen, also eine Vielzahl von PN-Übergängen in Serienschaltung übereinander innerhalb der Poren wirksam anzuordnen und dadurch eine bedeutend höhere Spannungsabgabe bzw. einen entsprechend höheren Wirkungsgrad der Solarzelle zu erhalten.
- Um eine selektive Einbringung der Schichtung in die Poren der eloxierten Schicht zu gewährleisten, derart, dass die erste Schicht sich auf dem reinen Aluminium am Grund der Poren, die zweite Schicht auf der leitenden ersten Schicht usw. niederschlägt, erfolgt während des Aufdampfvorganges eine Bestrahlung des Plättchens mit Elektronen,durch die alle Oberflächen der Eloxierschicht ausserhalb und auch innerhalb der Poren elektrisch aufgeladen werden, so dass auf diesen Oberflächenteilen kein ungewollter Niederschlag von Beschichtungsmaterialien erfolgen kann.
Claims (1)
- P a t e n t a n s p r u c i, Verfahren zur fier3tellung vor Solarzellen, d#adurch gekennzeichnet, dass auf der Oberseite eines Trägerplättchens aus Aluminium eine durchgehend poröse lichtdurchlässige Aluminiumoxydschicht durch Lloxieren bergestellt wird, danach deren durchgehende Poren unter gleichzeitiger Bestrahlung des Plättchens mit Elektronen, beispielsweise aus einer Glühkathode, nacheinander von unten nach oben mit periodisch abwechselnd jeweils einer Schicht aus Halbleitermaterial vom P-Typ, einer Schicht aus lialbleitermaterial vom T4-Typ und einer Metallschicht durch Aufdampfen im Vakuum ausgefüllt werden, und dass schliesslich als Gegenkontakt zu dem aus Aluminium bestehenden Trägerkörper eine lichtdurchlässige Kontaktierungsschicht auf die Oberseite der Aluminiumoxydschicht aufgebracht wird.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19772741954 DE2741954A1 (de) | 1977-09-17 | 1977-09-17 | Verfahren zur herstellung von solarzellen |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19772741954 DE2741954A1 (de) | 1977-09-17 | 1977-09-17 | Verfahren zur herstellung von solarzellen |
Publications (1)
Publication Number | Publication Date |
---|---|
DE2741954A1 true DE2741954A1 (de) | 1979-03-29 |
Family
ID=6019231
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19772741954 Pending DE2741954A1 (de) | 1977-09-17 | 1977-09-17 | Verfahren zur herstellung von solarzellen |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE2741954A1 (de) |
Cited By (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004042432A2 (en) * | 2002-11-05 | 2004-05-21 | Nanosolar, Inc. | Photovoltaic devices fabricated by growth from porous template |
US6852920B2 (en) | 2002-06-22 | 2005-02-08 | Nanosolar, Inc. | Nano-architected/assembled solar electricity cell |
US6936761B2 (en) | 2003-03-29 | 2005-08-30 | Nanosolar, Inc. | Transparent electrode, optoelectronic apparatus and devices |
US6946597B2 (en) * | 2002-06-22 | 2005-09-20 | Nanosular, Inc. | Photovoltaic devices fabricated by growth from porous template |
US7045205B1 (en) | 2004-02-19 | 2006-05-16 | Nanosolar, Inc. | Device based on coated nanoporous structure |
US7053294B2 (en) * | 2001-07-13 | 2006-05-30 | Midwest Research Institute | Thin-film solar cell fabricated on a flexible metallic substrate |
US7183127B2 (en) * | 2002-12-13 | 2007-02-27 | Canon Kabushiki Kasha | Method of manufacturing a semiconductor device |
US7253017B1 (en) | 2002-06-22 | 2007-08-07 | Nanosolar, Inc. | Molding technique for fabrication of optoelectronic devices |
US7306823B2 (en) | 2004-09-18 | 2007-12-11 | Nanosolar, Inc. | Coated nanoparticles and quantum dots for solution-based fabrication of photovoltaic cells |
US7462774B2 (en) | 2003-05-21 | 2008-12-09 | Nanosolar, Inc. | Photovoltaic devices fabricated from insulating nanostructured template |
US7511217B1 (en) | 2003-04-19 | 2009-03-31 | Nanosolar, Inc. | Inter facial architecture for nanostructured optoelectronic devices |
US7594982B1 (en) | 2002-06-22 | 2009-09-29 | Nanosolar, Inc. | Nanostructured transparent conducting electrode |
US7605327B2 (en) | 2003-05-21 | 2009-10-20 | Nanosolar, Inc. | Photovoltaic devices fabricated from nanostructured template |
JP2009267335A (ja) * | 2007-09-28 | 2009-11-12 | Fujifilm Corp | 太陽電池用基板および太陽電池 |
US7645934B1 (en) | 2003-04-29 | 2010-01-12 | Nanosolar, Inc. | Nanostructured layer and fabrication methods |
US7663057B2 (en) | 2004-02-19 | 2010-02-16 | Nanosolar, Inc. | Solution-based fabrication of photovoltaic cell |
US7700464B2 (en) | 2004-02-19 | 2010-04-20 | Nanosolar, Inc. | High-throughput printing of semiconductor precursor layer from nanoflake particles |
US7732229B2 (en) | 2004-09-18 | 2010-06-08 | Nanosolar, Inc. | Formation of solar cells with conductive barrier layers and foil substrates |
US7772487B1 (en) | 2004-10-16 | 2010-08-10 | Nanosolar, Inc. | Photovoltaic cell with enhanced energy transfer |
US8247243B2 (en) | 2009-05-22 | 2012-08-21 | Nanosolar, Inc. | Solar cell interconnection |
US8309949B2 (en) | 2005-01-20 | 2012-11-13 | Nanosolar, Inc. | Optoelectronic architecture having compound conducting substrate |
US8309163B2 (en) | 2004-02-19 | 2012-11-13 | Nanosolar, Inc. | High-throughput printing of semiconductor precursor layer by use of chalcogen-containing vapor and inter-metallic material |
US8329501B1 (en) | 2004-02-19 | 2012-12-11 | Nanosolar, Inc. | High-throughput printing of semiconductor precursor layer from inter-metallic microflake particles |
US8372734B2 (en) | 2004-02-19 | 2013-02-12 | Nanosolar, Inc | High-throughput printing of semiconductor precursor layer from chalcogenide nanoflake particles |
US8541048B1 (en) | 2004-09-18 | 2013-09-24 | Nanosolar, Inc. | Formation of photovoltaic absorber layers on foil substrates |
US8624105B2 (en) | 2009-05-01 | 2014-01-07 | Synkera Technologies, Inc. | Energy conversion device with support member having pore channels |
US8623448B2 (en) | 2004-02-19 | 2014-01-07 | Nanosolar, Inc. | High-throughput printing of semiconductor precursor layer from chalcogenide microflake particles |
US8642455B2 (en) | 2004-02-19 | 2014-02-04 | Matthew R. Robinson | High-throughput printing of semiconductor precursor layer from nanoflake particles |
US8846141B1 (en) | 2004-02-19 | 2014-09-30 | Aeris Capital Sustainable Ip Ltd. | High-throughput printing of semiconductor precursor layer from microflake particles |
US8927315B1 (en) | 2005-01-20 | 2015-01-06 | Aeris Capital Sustainable Ip Ltd. | High-throughput assembly of series interconnected solar cells |
-
1977
- 1977-09-17 DE DE19772741954 patent/DE2741954A1/de active Pending
Cited By (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7053294B2 (en) * | 2001-07-13 | 2006-05-30 | Midwest Research Institute | Thin-film solar cell fabricated on a flexible metallic substrate |
US7253017B1 (en) | 2002-06-22 | 2007-08-07 | Nanosolar, Inc. | Molding technique for fabrication of optoelectronic devices |
US7594982B1 (en) | 2002-06-22 | 2009-09-29 | Nanosolar, Inc. | Nanostructured transparent conducting electrode |
US6946597B2 (en) * | 2002-06-22 | 2005-09-20 | Nanosular, Inc. | Photovoltaic devices fabricated by growth from porous template |
US7291782B2 (en) | 2002-06-22 | 2007-11-06 | Nanosolar, Inc. | Optoelectronic device and fabrication method |
US6852920B2 (en) | 2002-06-22 | 2005-02-08 | Nanosolar, Inc. | Nano-architected/assembled solar electricity cell |
WO2004042432A2 (en) * | 2002-11-05 | 2004-05-21 | Nanosolar, Inc. | Photovoltaic devices fabricated by growth from porous template |
WO2004042432A3 (en) * | 2002-11-05 | 2004-12-23 | Nanosolar Inc | Photovoltaic devices fabricated by growth from porous template |
US7183127B2 (en) * | 2002-12-13 | 2007-02-27 | Canon Kabushiki Kasha | Method of manufacturing a semiconductor device |
US6936761B2 (en) | 2003-03-29 | 2005-08-30 | Nanosolar, Inc. | Transparent electrode, optoelectronic apparatus and devices |
US8178384B1 (en) | 2003-04-19 | 2012-05-15 | Nanosolar, Inc. | Interfacial architecture for nanostructured optoelectronic devices |
US7511217B1 (en) | 2003-04-19 | 2009-03-31 | Nanosolar, Inc. | Inter facial architecture for nanostructured optoelectronic devices |
US8257788B2 (en) | 2003-04-29 | 2012-09-04 | Nanosolar, Inc. | Nanostructured layer and fabrication methods |
US7645934B1 (en) | 2003-04-29 | 2010-01-12 | Nanosolar, Inc. | Nanostructured layer and fabrication methods |
US7462774B2 (en) | 2003-05-21 | 2008-12-09 | Nanosolar, Inc. | Photovoltaic devices fabricated from insulating nanostructured template |
US7605327B2 (en) | 2003-05-21 | 2009-10-20 | Nanosolar, Inc. | Photovoltaic devices fabricated from nanostructured template |
US8093489B2 (en) | 2003-05-21 | 2012-01-10 | Nanosolar, Inc. | Photovoltaic devices fabricated from nanostructured template |
US8088309B2 (en) | 2004-02-19 | 2012-01-03 | Nanosolar, Inc. | Solution-based fabrication of photovoltaic cell |
US8168089B2 (en) | 2004-02-19 | 2012-05-01 | Nanosolar, Inc. | Solution-based fabrication of photovoltaic cell |
US8846141B1 (en) | 2004-02-19 | 2014-09-30 | Aeris Capital Sustainable Ip Ltd. | High-throughput printing of semiconductor precursor layer from microflake particles |
US8642455B2 (en) | 2004-02-19 | 2014-02-04 | Matthew R. Robinson | High-throughput printing of semiconductor precursor layer from nanoflake particles |
US8038909B2 (en) | 2004-02-19 | 2011-10-18 | Nanosolar, Inc. | Solution-based fabrication of photovoltaic cell |
US7663057B2 (en) | 2004-02-19 | 2010-02-16 | Nanosolar, Inc. | Solution-based fabrication of photovoltaic cell |
US8623448B2 (en) | 2004-02-19 | 2014-01-07 | Nanosolar, Inc. | High-throughput printing of semiconductor precursor layer from chalcogenide microflake particles |
US8309163B2 (en) | 2004-02-19 | 2012-11-13 | Nanosolar, Inc. | High-throughput printing of semiconductor precursor layer by use of chalcogen-containing vapor and inter-metallic material |
US7700464B2 (en) | 2004-02-19 | 2010-04-20 | Nanosolar, Inc. | High-throughput printing of semiconductor precursor layer from nanoflake particles |
US8182720B2 (en) | 2004-02-19 | 2012-05-22 | Nanosolar, Inc. | Solution-based fabrication of photovoltaic cell |
US8182721B2 (en) | 2004-02-19 | 2012-05-22 | Nanosolar, Inc. | Solution-based fabrication of photovoltaic cell |
US8372734B2 (en) | 2004-02-19 | 2013-02-12 | Nanosolar, Inc | High-throughput printing of semiconductor precursor layer from chalcogenide nanoflake particles |
US8366973B2 (en) | 2004-02-19 | 2013-02-05 | Nanosolar, Inc | Solution-based fabrication of photovoltaic cell |
US8206616B2 (en) | 2004-02-19 | 2012-06-26 | Nanosolar, Inc. | Solution-based fabrication of photovoltaic cell |
US8329501B1 (en) | 2004-02-19 | 2012-12-11 | Nanosolar, Inc. | High-throughput printing of semiconductor precursor layer from inter-metallic microflake particles |
US7045205B1 (en) | 2004-02-19 | 2006-05-16 | Nanosolar, Inc. | Device based on coated nanoporous structure |
US7306823B2 (en) | 2004-09-18 | 2007-12-11 | Nanosolar, Inc. | Coated nanoparticles and quantum dots for solution-based fabrication of photovoltaic cells |
US8193442B2 (en) | 2004-09-18 | 2012-06-05 | Nanosolar, Inc. | Coated nanoparticles and quantum dots for solution-based fabrication of photovoltaic cells |
US8525152B2 (en) | 2004-09-18 | 2013-09-03 | Nanosolar, Inc. | Formation of solar cells with conductive barrier layers and foil substrates |
US8541048B1 (en) | 2004-09-18 | 2013-09-24 | Nanosolar, Inc. | Formation of photovoltaic absorber layers on foil substrates |
US8809678B2 (en) | 2004-09-18 | 2014-08-19 | Aeris Capital Sustainable Ip Ltd. | Coated nanoparticles and quantum dots for solution-based fabrication of photovoltaic cells |
US7732229B2 (en) | 2004-09-18 | 2010-06-08 | Nanosolar, Inc. | Formation of solar cells with conductive barrier layers and foil substrates |
US7772487B1 (en) | 2004-10-16 | 2010-08-10 | Nanosolar, Inc. | Photovoltaic cell with enhanced energy transfer |
US8309949B2 (en) | 2005-01-20 | 2012-11-13 | Nanosolar, Inc. | Optoelectronic architecture having compound conducting substrate |
US8927315B1 (en) | 2005-01-20 | 2015-01-06 | Aeris Capital Sustainable Ip Ltd. | High-throughput assembly of series interconnected solar cells |
US8198117B2 (en) | 2005-08-16 | 2012-06-12 | Nanosolar, Inc. | Photovoltaic devices with conductive barrier layers and foil substrates |
JP2009267335A (ja) * | 2007-09-28 | 2009-11-12 | Fujifilm Corp | 太陽電池用基板および太陽電池 |
US8624105B2 (en) | 2009-05-01 | 2014-01-07 | Synkera Technologies, Inc. | Energy conversion device with support member having pore channels |
US8247243B2 (en) | 2009-05-22 | 2012-08-21 | Nanosolar, Inc. | Solar cell interconnection |
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