WO2009034825A1 - 半導体単結晶製造装置における位置計測装置および位置計測方法 - Google Patents

半導体単結晶製造装置における位置計測装置および位置計測方法 Download PDF

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Publication number
WO2009034825A1
WO2009034825A1 PCT/JP2008/065072 JP2008065072W WO2009034825A1 WO 2009034825 A1 WO2009034825 A1 WO 2009034825A1 JP 2008065072 W JP2008065072 W JP 2008065072W WO 2009034825 A1 WO2009034825 A1 WO 2009034825A1
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WO
WIPO (PCT)
Prior art keywords
determined
location measurement
scanning
distance
measured
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Application number
PCT/JP2008/065072
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English (en)
French (fr)
Inventor
Toshio Hayashida
Ayumi Kihara
Naoji Mitani
Original Assignee
Sumco Techxiv Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Sumco Techxiv Corporation filed Critical Sumco Techxiv Corporation
Priority to US12/676,431 priority Critical patent/US8115908B2/en
Priority to DE112008002267.4T priority patent/DE112008002267B4/de
Publication of WO2009034825A1 publication Critical patent/WO2009034825A1/ja

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Abstract

　熱遮蔽体のエッジ位置の位置計測処理を短時間で高作業効率にて行いつつも、エッジ位置を精度よくばらつきなく計測できるようにする。第１の走査間隔で距離計測を行いながら、第１の判断処理を行って、その結果、エッジ位置と判断できる計測距離の変化が判断された場合に、今度は光走査位置を走査方向とは逆方向（あるいは走査方向とは逆方向）に所定量戻し、戻された光走査位置からレーザ光を再度走査しながら、第１の走査間隔よりも短い第２の走査間隔で距離計測を行いながら、第２の判断処理を行って、その結果、エッジ位置と判断できる計測距離の変化が判断できた場合に、その変化が判断された時点の光走査位置でレーザ光が熱遮蔽体のリムのエッジで反射されたと最終的に判定する。
PCT/JP2008/065072 2007-09-12 2008-08-25 半導体単結晶製造装置における位置計測装置および位置計測方法 WO2009034825A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/676,431 US8115908B2 (en) 2007-09-12 2008-08-25 Position measuring device and position measuring method in semiconductor single crystal manufacturing device
DE112008002267.4T DE112008002267B4 (de) 2007-09-12 2008-08-25 Positionsmessvorrichtung und Positionsmessverfahren in einer Halbleitereinkristallherstellungsvorrichtung

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007236952A JP5181178B2 (ja) 2007-09-12 2007-09-12 半導体単結晶製造装置における位置計測装置および位置計測方法
JP2007-236952 2007-09-12

Publications (1)

Publication Number Publication Date
WO2009034825A1 true WO2009034825A1 (ja) 2009-03-19

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Application Number Title Priority Date Filing Date
PCT/JP2008/065072 WO2009034825A1 (ja) 2007-09-12 2008-08-25 半導体単結晶製造装置における位置計測装置および位置計測方法

Country Status (5)

Country Link
US (1) US8115908B2 (ja)
JP (1) JP5181178B2 (ja)
DE (1) DE112008002267B4 (ja)
TW (1) TWI383073B (ja)
WO (1) WO2009034825A1 (ja)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011071176A1 (ja) 2009-12-11 2011-06-16 ジャパンスーパークォーツ株式会社 シリカガラスルツボ
JP5577873B2 (ja) 2010-06-16 2014-08-27 信越半導体株式会社 遮熱部材下端面と原料融液面との間の距離の測定方法、遮熱部材下端面と原料融液面との間の距離の制御方法、シリコン単結晶の製造方法
JP5781303B2 (ja) * 2010-12-31 2015-09-16 株式会社Sumco シリカガラスルツボ製造方法およびシリカガラスルツボ製造装置
DE102012003114B4 (de) * 2012-02-16 2014-02-13 Audiodev Gmbh Verfahren zum messen des abstands zwischen zwei gegenständen
US9273411B2 (en) * 2012-11-02 2016-03-01 Gtat Corporation Growth determination in the solidification of a crystalline material
DE112015003765B4 (de) * 2014-09-12 2022-02-03 Shin-Etsu Handotai Co., Ltd. Verfahren zum Herstellen eines Einkristalls
JP6424724B2 (ja) * 2015-04-17 2018-11-21 住友金属鉱山株式会社 距離計測方法及び距離計測装置
JP6977619B2 (ja) * 2018-02-28 2021-12-08 株式会社Sumco シリコン単結晶の酸素濃度推定方法、およびシリコン単結晶の製造方法
JP7272249B2 (ja) * 2019-12-02 2023-05-12 株式会社Sumco 単結晶育成方法および単結晶育成装置
CN112501685B (zh) * 2020-12-15 2022-02-01 南京晶能半导体科技有限公司 一种水冷屏对中组件及对中方法
CN113566722B (zh) * 2021-06-23 2023-06-30 浙江晶阳机电股份有限公司 自动测量液口距的装置及其方法
JP2023038005A (ja) * 2021-09-06 2023-03-16 株式会社Sumco 単結晶の製造方法及び単結晶製造装置
CN114606565B (zh) * 2022-01-27 2023-01-20 徐州鑫晶半导体科技有限公司 单晶生长装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000264779A (ja) * 1999-03-17 2000-09-26 Komatsu Electronic Metals Co Ltd メルトレベル検出装置及び検出方法
WO2001083859A1 (fr) * 2000-05-01 2001-11-08 Komatsu Denshi Kinzoku Kabushiki Kaisha Procede et appareil de mesure du niveau de bain de fusion
JP2007223879A (ja) * 2006-02-27 2007-09-06 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 位置測定方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4561513B2 (ja) * 2005-07-22 2010-10-13 株式会社Ｓｕｍｃｏ 単結晶引き上げ装置の液面位置調整機構及び液面位置調整方法並びに単結晶引き上げ装置の液面位置合わせ機構及び液面位置合わせ方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000264779A (ja) * 1999-03-17 2000-09-26 Komatsu Electronic Metals Co Ltd メルトレベル検出装置及び検出方法
WO2001083859A1 (fr) * 2000-05-01 2001-11-08 Komatsu Denshi Kinzoku Kabushiki Kaisha Procede et appareil de mesure du niveau de bain de fusion
JP2007223879A (ja) * 2006-02-27 2007-09-06 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 位置測定方法

Also Published As

Publication number Publication date
US8115908B2 (en) 2012-02-14
DE112008002267T5 (de) 2010-09-16
TWI383073B (zh) 2013-01-21
US20100165321A1 (en) 2010-07-01
TW200923144A (en) 2009-06-01
DE112008002267B4 (de) 2016-01-07
JP5181178B2 (ja) 2013-04-10
JP2009067624A (ja) 2009-04-02

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