Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
  • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
  • H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
  • H10W70/614—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together the multiple chips being integrally enclosed
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
  • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W44/00—Electrical arrangements for controlling or matching impedance
  • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
  • H10W70/01—Manufacture or treatment
  • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
  • H10W70/08—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs
  • H10W70/09—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
  • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
  • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
  • H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
  • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
  • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
  • H10W70/63—Vias, e.g. via plugs
  • H10W70/635—Through-vias
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/01—Manufacture or treatment
  • H10W72/0198—Manufacture or treatment batch processes
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W74/00—Encapsulations, e.g. protective coatings
  • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
  • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
  • H10W74/114—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W90/00—Package configurations
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W90/00—Package configurations
  • H10W90/401—Package configurations characterised by multiple insulating or insulated package substrates, interposers or RDLs
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
  • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
  • H10P72/743—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W44/00—Electrical arrangements for controlling or matching impedance
  • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
  • H10W44/203—Electrical connections
  • H10W44/209—Vertical interconnections, e.g. vias
  • H10W44/212—Coaxial feed-throughs in substrates
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W44/00—Electrical arrangements for controlling or matching impedance
  • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
  • H10W44/241—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for passive devices or passive elements
  • H10W44/248—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for passive devices or passive elements for antennas
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W44/00—Electrical arrangements for controlling or matching impedance
  • H10W44/501—Inductive arrangements
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W74/00—Encapsulations, e.g. protective coatings
  • H10W74/01—Manufacture or treatment
  • H10W74/019—Manufacture or treatment using temporary auxiliary substrates
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W74/00—Encapsulations, e.g. protective coatings
  • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
  • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
  • H10W74/129—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed forming a chip-scale package [CSP]

Definitions

• This disclosure relates generally to packages that have more than one element including at least one semiconductor device, and more specifically, to interconnect for such packages.
• RCP redistributed chip package
• FIG. 1 is a cross section of a packaged semiconductor device at a stage in processing according to an embodiment
• FIG. 2 is a cross section of the packaged semiconductor device of FIG. 1 at a subsequent stage in processing
• FIG. 3 is a cross section of the packaged semiconductor device of FIG. 2 at a subsequent stage in processing
• FIG. 4 is a cross section of the packaged semiconductor device of FIG. 3 at a subsequent stage in processing
• FIG. 5 is a cross section of the packaged semiconductor device of FIG. 4 at a subsequent stage in processing
• FIG. 6 is a cross section of the packaged semiconductor device of FIG. 5 at a subsequent stage in processing
• FIG. 7 is a cross section of the packaged semiconductor device of FIG. 6 at a subsequent stage in processing
• FIG. 8 is a cross section of the packaged semiconductor device of FIG. 7 at a subsequent stage in processing
• FIG. 9 is a cross section of the packaged semiconductor device of FIG. 8 at a subsequent stage in processing
• FIG. 10 is a top view of a portion of the packaged device of FIGs. 1-9.
• FIG. 11 is a top view of an alternative for the portion of FIG. 10.
• connection block which provides the capability of extending from the top side to a back side because the connection block is prefabricated.
• the connection block which can also be called a connector block, has the organic fill formed around in the same manner as the other elements in the RCP.
• the connection block thus allows electrical connection to be made from the interconnect on the top side to the back side without having to etch via holes and then filling the via holes to form vias.
• the distance from the top side to the back side, for practical production, is too long for forming and filling vias.
• One application of connection block is to place an antenna on the back side. Another is place a ground plane on the back side. This is better understood by reference to the drawings and the following description.
• FIG. 1 Shown in FIG. 1 is a package 10 comprising a carrier 12, a tape 14, an element 16, an element 18, and connection block 20.
• Carrier 12 is for providing mechanical support.
• Tape 14 is two-sided.
• Element 16 may be an integrated circuit, and element 18 may be an integrated circuit. On or the other could also be another type of element such as a passive device or a discrete semiconductor device.
• Connection block 20 has a conductor 22, a conductor 24, and a conductor 26 that run vertically the length connection block 20 and are surrounded by a dielectric 28.
• Dielectric 28 is preferably an organic material similar to or the same as that used as the fill in making an RCP, but dielectric 28 could also be another material such as ceramic.
• connection block 20 is chosen to be a little thicker than the thickness of the organic layer that surround the elements of the finished RCP. A common thickness for the organic layer surrounding the elements is about 0.65 millimeter (mm) but this may vary. In such case of 0.65 mm, connection block 20 and thus conductors 22, 24, and 26 are about 0.70 mm in length. Connection block 20 is preferably one mm or more in diameter. A smaller diameter may present difficulties in adhering reliably to tape 14 but may nonetheless be advantageous for some applications.
• Organic layer 30 Shown in FIG. 2 is package 10 after deposition of an organic layer 30 which covers elements 16 and 18 and connection block 20.
• Organic layer 30 may be deposited to be about 0.80 mm for the example of connection block 20 being about 0.70 mm.
• Organic layer 30 may be considered a polymer layer.
• FIG. 3 Shown in FIG. 3 is package 10 after grinding organic layer 30 and a small portion of connection block 20 to expose conductors 22, 24, and 26. Organic layer 30 is then reduced, in this example, to 0.65 mm.
• FIG. 4 Shown in FIG. 4 is package 10 after removing carrier 12 and tape 14.
• FIG. 4 also has package 10 inverted from that of FIGs. 1-3.
• Elements 16 and 18 are exposed on the top side of package 10.
• the exposed surface of element 16 and the expose surface of element 18 are where contacts for elements 16 and 18 reside.
• Interconnect 32 may be made of multiple conductive layers connected to elements 16 and 18 and connection block 20 using vias.
• On interconnect 32 is a plurality of pads 34 of which one is pad 36. Pads 34 are for receiving solder balls and are on a top side of package 10.
• Connection block 20 is exposed on a back side of package 10. In a conventional RCP which would not have connection block 20, processing could be complete except for the solder balls. Solder balls could be added at this point or at a subsequent convenient time.
• FIG. 6 Shown in FIG. 6 is package 10 after forming a dielectric layer 38 on the back side and forming vias 42, 44, and 46 through dielectric layer 38.
• Dielectric layer 38 is preferably the same material as organic layer 30 but could be another insulating material. Dielectric layer 38 may be 0.1 mm thick. Via 42 is in contact with conductor 22. Via 44 is contact with conductor 24. Via 46 is in contact with conductor 46. FIG. 6 also shows package 10 inverted from FIGs. 4 and 5. The side with pads 34 is still called the top side though and the side with dielectric layer 38 is still called the back side.
• FIG. 7 Shown in FIG. 7 is package 10 after forming a patterned conductive layer over dielectric layer 38 comprising a ground plane 47 in contact with via 40, a trace 48 on in contact with via 42, and a trace 50 in contact with via 44.
• Ground plane 47 surrounds traces 48 and 50.
• Trace 48 extends laterally from via 42 and is present for stability.
• trace 50 extends laterally from via 44 in a different direction from that of trace 48 so that the lateral extension is not visible in the cross section of FIG. 7.
• the patterned conductive layer may be made by a conventional plating process in which a thin seed layer is deposited followed by photoresist which is patterned.
• ground plane 47 and traces 48 and 50 may be about 0.10 mm.
• FIG. 8 Shown in FIG. 8 is package 10 after forming a dielectric layer 52 and vias 54 and 56 through dielectric layer 52.
• Dielectric layer 52 may be the same material as for dielectric layer 38.
• Via 54 is in contact with trace 48.
• Via 56 is contact with trace 50.
• via 56 is shown in the cross section of FIG. 8 in contact with trace 50, via 56 is preferably located over a wider portion of trace 50 than shown.
• FIG. 9 Shown in FIG. 9 is package 10 after forming an antenna 58 in contact with vias 54 and 56.
• Antenna 58 may be formed and patterned using the same plating technique described for ground plane 47 and traces 48 and 50. Antenna 58 may be 0.200 mm thick.
• antenna 58 With antenna 58 in contact with vias 54 and 56, antenna is coupled to conductors 22 and 24, respectively. Due to the high frequencies that may be involved, vias 54 and 56 may not have to be in actual contact with antenna 58, if sufficiently close to antenna 58, for antenna 58 to be coupled to conductor 22.
• Package 10 of FIG. 9 is a completed RCP that will have solder balls added later at a time closer to being mounted on a circuit board.
• connection block 20 Shown in FIG. 10 is a top view of connection block 20 showing conductors 22, 24, and 26 in a line and dielectric 28 surrounding them in a circular shape.
• connection block 20 is a cylinder with three inline conductors.
• Conductors 22, 24, and 26 could be in a different configuration. Also the shape could be different than circular, such as square, rectangular, or triangular.
• connection block 60 comprising an outer insulating layer 68, a conductor ring 62, an inner conductor 64, and an insulating layer between conductor ring 62 and inner conductor 64.
• This forms a coaxial line which may be particularly beneficial when coupling to an antenna that is transmitting and receiving RF.
• Connection block 60 may replace connection block 20 with respect to the connection to antenna 58. If a ground plane were still desirable, the connection to the ground plane could be by another connection block or connection block 60 could be modified to have another conductor outside ring 62 for coupling to the ground plane.
• connection block 20 or connection block 60 may be achieved using wire bond machines.
• a wire bond is commonly 25 microns in diameter.
• Three of those wire bonds can be placed into a cylindrical mold that is many times longer than that of connection block 20.
• the mold is filled with the desired dielectric such as the material used for dielectric 30.
• the resulting structure is then cut into pieces of the desired length of about .070 mm.
• the surrounding dielectric may be a material such as ceramic. The rigidity of ceramic may be beneficial in the manufacturing process.
• a packaged semiconductor device having an interconnect layer, a semiconductor device, a first conductive element, and a connector block.
• the interconnect layer is over a first side of a polymer layer.
• the semiconductor device is surrounded on at least three sides by the polymer layer and is coupled to the interconnect layer.
• the first conductive element is over a second side of the polymer layer. The second side is opposite the first side.
• the connector block is within the polymer layer and has at least one electrical path extending from a first surface of the connector block to a second surface of the connector block, and electrically couples the interconnect layer to the first conductive element through the at least one electrical path.
• the connector block may comprise an insulating material surrounding the at least one electrical path.
• the connector block may have at least two coaxial electrical paths.
• the at least one electrical path may be a ground path and the first conductive element may be a ground plane.
• the at least one electrical path may be a signal path and the first conductive element may be an antenna.
• the packaged semiconductor device may further comprise a second conductive element and a second electrical path, wherein the second electrical path is a ground path and the second conductive element is a ground plane.
• the packaged semiconductor device may further comprise a third electrical path, wherein the third electrical path is coupled to the antenna.
• the method includes surrounding a semiconductor device on at least three sides by a polymer layer.
• the method further includes forming an interconnect layer over a first side of the polymer layer and over the semiconductor device, wherein the semiconductor device is coupled to the interconnect layer.
• the method further includes forming a conductive element over a second side of the polymer layer, wherein the second side is opposite the first side.
• the method further includes electrically coupling the interconnect layer to the conductive element through a connector block within the polymer layer, having at least one electrical path.
• the forming the conductive element over a second side may comprise plating a conductive material to form an antenna.
• the step of surrounding may comprise attaching a semiconductor device to a temporary support structure, forming the polymer layer over the semiconductor device, and removing the temporary support structure after forming the polymer layer.
• the step of electrically coupling may comprise attaching the connector block to the temporary support structure before forming the polymer layer, removing a portion of the polymer layer to expose a surface of the connector block, forming the interconnect layer over the surface of the connector block while forming the interconnect layer over the first side of the polymer layer.
• the method may further comprise depositing a dielectric layer over the surface of the connector block, and forming a via in the dielectric layer, wherein the via is electrically coupled to the connector block and the conductive element.
• the at least one electrical path may be selected from the group consisting of a ground path and a signal path.
• the first conductive element may be selected from a group consisting of a ground plane and an antenna.
• the at least one electrical path may comprise at least two coaxial electrical paths.
• the method includes attaching a semiconductor device to a temporary support structure.
• the method further includes attaching a connector block to the temporary support structure, wherein the connector block has at least one electrical path.
• the method further includes forming an encapsulant over the connector block and the semiconductor device.
• the method further includes removing a portion of the encapsulant to expose a top surface of the connector block.
• the method further includes forming an interconnect layer electrically coupled to the top surface of the connector block.
• the method further includes removing the temporary support structure to expose a bottom surface of the connector block.
• the method further includes electrically coupling a tangible element to the bottom surface of the connector block.
• the step of electrically coupling a tangible element to the bottom surface of the connector block may comprise plating a conductive material to form an antenna.
• the step of electrically coupling a tangible element to the bottom surface of the connector block may further comprise depositing a dielectric layer over the bottom surface of the connector block, and forming a via in the dielectric layer, wherein the via is electrically coupled to the connector block and the antenna.
• the step of removing a portion of the encapsulant to expose a top surface of the connector block may comprise grinding the encapsulant.
• the temporary support structure may be selected from a group consisting of a tape and a carrier.
• the connector block may have at least two coaxial electrical paths.
• dielectric layer 38 is shown as being formed after interconnect layer 32 whereas dielectric layer 38 may be deposited before interconnect layer 32 is formed.
• plating was described as the method for forming patterned metal layers, but other deposition techniques may be used.
• the metal could be sputtered and then patterned with an etch. Accordingly, the specification and figures are to be regarded in an illustrative rather than a restrictive sense, and all such modifications are intended to be included within the scope of the present invention. Any benefits, advantages, or solutions to problems that are described herein with regard to specific embodiments are not intended to be construed as a critical, required, or essential feature or element of any or all the claims.
• Coupled is not intended to be limited to a direct coupling or a mechanical coupling.

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Citations (9)

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• 2007
  • 2007-08-29 US US11/846,874 patent/US7838420B2/en active Active
• 2008
  • 2008-07-09 KR KR1020107004435A patent/KR20100065305A/ko not_active Withdrawn
  • 2008-07-09 JP JP2010522993A patent/JP5397962B2/ja active Active
  • 2008-07-09 EP EP08781552A patent/EP2195840A4/en not_active Ceased
  • 2008-07-09 CN CN200880104602.4A patent/CN101790788A/zh active Pending
  • 2008-07-09 WO PCT/US2008/069516 patent/WO2009032398A1/en not_active Ceased
  • 2008-07-15 TW TW097126735A patent/TWI451551B/zh active

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