WO2009028145A1 - 高輝度発光ダイオードの製造方法および発光素子基板並びに高輝度発光ダイオード - Google Patents

高輝度発光ダイオードの製造方法および発光素子基板並びに高輝度発光ダイオード Download PDF

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Publication number
WO2009028145A1
WO2009028145A1 PCT/JP2008/002216 JP2008002216W WO2009028145A1 WO 2009028145 A1 WO2009028145 A1 WO 2009028145A1 JP 2008002216 W JP2008002216 W JP 2008002216W WO 2009028145 A1 WO2009028145 A1 WO 2009028145A1
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Prior art keywords
iii
ratio
growth
emitting diode
light
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PCT/JP2008/002216
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English (en)
French (fr)
Inventor
Masataka Watanabe
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Shin Etsu Handotai Co Ltd
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Shin Etsu Handotai Co Ltd
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Priority to JP2009529974A priority Critical patent/JP5278323B2/ja
Publication of WO2009028145A1 publication Critical patent/WO2009028145A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2911—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3418—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP

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  • Led Devices (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

　本発明は、ＧａＡｓ基板を除去した面に第二の電流拡散層としてＩＩＩ－Ｖ族化合物半導体をＨＶＰＥ成長により形成する工程は、供給する原料ガスの形成当初のＩＩＩ／Ｖ比を３以上にし、その後前記ＩＩＩ／Ｖ比が相対的に低くなるように変化させ、且つＩＩＩ／Ｖ比を３以上にして第二の電流拡散層を形成する時の成長温度を、ＩＩＩ／Ｖ比を相対的に低くして成長する時の温度よりも低温域である５５０°C～７００°C、ＩＩＩ／Ｖ比を５以上にする場合は５５０°C～７３０°Cの範囲内の温度として成長を開始し、その後ＩＩＩ／Ｖ比を相対的に低くして成長する時の温度と同じ温度まで昇温させることを特徴とする高輝度発光ダイオードの製造方法である。これによって、ＧａＡｓ基板を除去した面に第二の電流拡散層をエピタキシャル成長する際に起こる成長膜の破壊を防ぎ、成長初期段階の界面に発生するマイクロ穴欠陥を抑えることができる。
PCT/JP2008/002216 2007-08-30 2008-08-14 高輝度発光ダイオードの製造方法および発光素子基板並びに高輝度発光ダイオード Ceased WO2009028145A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009529974A JP5278323B2 (ja) 2007-08-30 2008-08-14 高輝度発光ダイオードの製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-223705 2007-08-30
JP2007223705 2007-08-30

Publications (1)

Publication Number Publication Date
WO2009028145A1 true WO2009028145A1 (ja) 2009-03-05

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PCT/JP2008/002216 Ceased WO2009028145A1 (ja) 2007-08-30 2008-08-14 高輝度発光ダイオードの製造方法および発光素子基板並びに高輝度発光ダイオード

Country Status (3)

Country Link
JP (1) JP5278323B2 (ja)
TW (1) TWI411126B (ja)
WO (1) WO2009028145A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011253893A (ja) * 2010-06-01 2011-12-15 Shin Etsu Handotai Co Ltd 化合物半導体基板の製造方法及び化合物半導体基板

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000269145A (ja) * 1999-03-17 2000-09-29 Sharp Corp 化合物半導体の結晶成長方法および半導体発光素子
JP2003023177A (ja) * 2001-07-06 2003-01-24 Sharp Corp 半導体発光素子の製造方法
JP2004260109A (ja) * 2003-02-27 2004-09-16 Shin Etsu Handotai Co Ltd 発光素子の製造方法、複合透光性基板及び発光素子
JP2004296707A (ja) * 2003-03-26 2004-10-21 Shin Etsu Handotai Co Ltd 発光素子の製造方法、複合透光性基板及び発光素子
JP2005150664A (ja) * 2003-11-19 2005-06-09 Shin Etsu Handotai Co Ltd 発光素子及びその製造方法
JP2005277218A (ja) * 2004-03-25 2005-10-06 Shin Etsu Handotai Co Ltd 発光素子及びその製造方法
WO2007088841A1 (ja) * 2006-01-31 2007-08-09 Shin-Etsu Handotai Co., Ltd. 発光素子およびその製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000269145A (ja) * 1999-03-17 2000-09-29 Sharp Corp 化合物半導体の結晶成長方法および半導体発光素子
JP2003023177A (ja) * 2001-07-06 2003-01-24 Sharp Corp 半導体発光素子の製造方法
JP2004260109A (ja) * 2003-02-27 2004-09-16 Shin Etsu Handotai Co Ltd 発光素子の製造方法、複合透光性基板及び発光素子
JP2004296707A (ja) * 2003-03-26 2004-10-21 Shin Etsu Handotai Co Ltd 発光素子の製造方法、複合透光性基板及び発光素子
JP2005150664A (ja) * 2003-11-19 2005-06-09 Shin Etsu Handotai Co Ltd 発光素子及びその製造方法
JP2005277218A (ja) * 2004-03-25 2005-10-06 Shin Etsu Handotai Co Ltd 発光素子及びその製造方法
WO2007088841A1 (ja) * 2006-01-31 2007-08-09 Shin-Etsu Handotai Co., Ltd. 発光素子およびその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011253893A (ja) * 2010-06-01 2011-12-15 Shin Etsu Handotai Co Ltd 化合物半導体基板の製造方法及び化合物半導体基板

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TW200929616A (en) 2009-07-01
TWI411126B (zh) 2013-10-01
JPWO2009028145A1 (ja) 2010-11-25
JP5278323B2 (ja) 2013-09-04

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