WO2009017017A1 - 高輝度発光ダイオ－ド及びその製造方法 - Google Patents

高輝度発光ダイオ－ド及びその製造方法 Download PDF

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Publication number
WO2009017017A1
WO2009017017A1 PCT/JP2008/063250 JP2008063250W WO2009017017A1 WO 2009017017 A1 WO2009017017 A1 WO 2009017017A1 JP 2008063250 W JP2008063250 W JP 2008063250W WO 2009017017 A1 WO2009017017 A1 WO 2009017017A1
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
window layer
type gap
gap window
high brightness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/063250
Other languages
English (en)
French (fr)
Inventor
Masataka Watanabe
Masato Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to JP2009525361A priority Critical patent/JPWO2009017017A1/ja
Publication of WO2009017017A1 publication Critical patent/WO2009017017A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers

Landscapes

  • Led Devices (AREA)

Abstract

　反りが小さくチップ工程での加工割れの無い厚い窓層を備えた高輝度発光ダイオード、及びその高輝度発光ダイオードを安定して製造できる方法を提供する。 　ＧａＡｓ基板上に成長せしめられたＡｌＧａＩｎＰの４元発光層と、前記ＡｌＧａＩｎＰの４元発光層の表層に成長せしめられた発光光の取り出し用のｐ型ＧａＰ窓層と、前記ＧａＡｓ基板をエッチング除去した前記ＡｌＧａＩｎＰの４元発光層の裏面に気相成長せしめられた発光光の取り出し用のｎ型ＧａＰ窓層とを有し、前記裏面のｎ型ＧａＰ窓層と前記表層のｐ型ＧａＰ窓層の材質の組成を同一としかつ前記裏面のｎ型ＧａＰ窓層厚さ／前記表層のｐ型ＧａＰ窓層厚さの比Ｘを所定の範囲に設定するようにした。
PCT/JP2008/063250 2007-07-31 2008-07-24 高輝度発光ダイオ－ド及びその製造方法 Ceased WO2009017017A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009525361A JPWO2009017017A1 (ja) 2007-07-31 2008-07-24 高輝度発光ダイオ−ド及びその製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-199627 2007-07-31
JP2007199627 2007-07-31

Publications (1)

Publication Number Publication Date
WO2009017017A1 true WO2009017017A1 (ja) 2009-02-05

Family

ID=40304247

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/063250 Ceased WO2009017017A1 (ja) 2007-07-31 2008-07-24 高輝度発光ダイオ－ド及びその製造方法

Country Status (3)

Country Link
JP (1) JPWO2009017017A1 (ja)
TW (1) TW200924240A (ja)
WO (1) WO2009017017A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009043983A (ja) * 2007-08-09 2009-02-26 Shin Etsu Handotai Co Ltd 高輝度発光ダイオードの製造方法
WO2013041279A1 (de) * 2011-09-23 2013-03-28 Osram Opto Semiconductors Gmbh Strahlungsemittierender halbleiterchip
KR101412142B1 (ko) 2012-09-13 2014-06-25 광전자 주식회사 엔형 질화갈륨 윈도우층을 가진 알루미늄갈륨인듐인계 발광다이오드 및 그 제조 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04315479A (ja) * 1991-04-12 1992-11-06 Mitsubishi Cable Ind Ltd 半導体発光素子とその製造方法
JP2004281825A (ja) * 2003-03-17 2004-10-07 Hitachi Cable Ltd 発光ダイオードの製造方法
WO2006129595A1 (ja) * 2005-05-31 2006-12-07 Shin-Etsu Handotai Co., Ltd. 発光素子の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04315479A (ja) * 1991-04-12 1992-11-06 Mitsubishi Cable Ind Ltd 半導体発光素子とその製造方法
JP2004281825A (ja) * 2003-03-17 2004-10-07 Hitachi Cable Ltd 発光ダイオードの製造方法
WO2006129595A1 (ja) * 2005-05-31 2006-12-07 Shin-Etsu Handotai Co., Ltd. 発光素子の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009043983A (ja) * 2007-08-09 2009-02-26 Shin Etsu Handotai Co Ltd 高輝度発光ダイオードの製造方法
WO2013041279A1 (de) * 2011-09-23 2013-03-28 Osram Opto Semiconductors Gmbh Strahlungsemittierender halbleiterchip
KR101412142B1 (ko) 2012-09-13 2014-06-25 광전자 주식회사 엔형 질화갈륨 윈도우층을 가진 알루미늄갈륨인듐인계 발광다이오드 및 그 제조 방법

Also Published As

Publication number Publication date
TW200924240A (en) 2009-06-01
JPWO2009017017A1 (ja) 2010-10-21

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