WO2009017017A1 - High brightness light emitting diode and method for manufacturing the same - Google Patents

High brightness light emitting diode and method for manufacturing the same Download PDF

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Publication number
WO2009017017A1
WO2009017017A1 PCT/JP2008/063250 JP2008063250W WO2009017017A1 WO 2009017017 A1 WO2009017017 A1 WO 2009017017A1 JP 2008063250 W JP2008063250 W JP 2008063250W WO 2009017017 A1 WO2009017017 A1 WO 2009017017A1
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
window layer
type gap
gap window
high brightness
Prior art date
Application number
PCT/JP2008/063250
Other languages
French (fr)
Japanese (ja)
Inventor
Masataka Watanabe
Masato Yamada
Original Assignee
Shin-Etsu Handotai Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin-Etsu Handotai Co., Ltd. filed Critical Shin-Etsu Handotai Co., Ltd.
Priority to JP2009525361A priority Critical patent/JPWO2009017017A1/en
Publication of WO2009017017A1 publication Critical patent/WO2009017017A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate

Abstract

Provided is a high brightness light emitting diode having a thick window layer with a small warping and no process breakage in chip steps. A method for stably manufacturing such high brightness light emitting diode is also provided. The high brightness light emitting diode is provided with the AlGaInP four-element light emitting layer deposited on a GaAs substrate; a p-type GaP window layer deposited on the front surface of the AlGaInP four-element light emitting layer for taking out emitted light; and an n-type GaP window layer for taking out the emitted light. The n-type GaP window layer is deposited by vapor phase deposition on the rear surface of the AlGaInP four-element light emitting layer from which the GaAs substrate is removed by etching. The material composition of the n-type GaP window layer on the rear surface and that of the p-type GaP window layer on the front layer are identical, and a ratio X, i.e., a ratio of the n-type GaP window layer thickness on the rear surface to the thickness of the p-type GaP window layer on the front surface is set within a prescribed range.
PCT/JP2008/063250 2007-07-31 2008-07-24 High brightness light emitting diode and method for manufacturing the same WO2009017017A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009525361A JPWO2009017017A1 (en) 2007-07-31 2008-07-24 High brightness light emitting diode and method for manufacturing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-199627 2007-07-31
JP2007199627 2007-07-31

Publications (1)

Publication Number Publication Date
WO2009017017A1 true WO2009017017A1 (en) 2009-02-05

Family

ID=40304247

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/063250 WO2009017017A1 (en) 2007-07-31 2008-07-24 High brightness light emitting diode and method for manufacturing the same

Country Status (3)

Country Link
JP (1) JPWO2009017017A1 (en)
TW (1) TW200924240A (en)
WO (1) WO2009017017A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009043983A (en) * 2007-08-09 2009-02-26 Shin Etsu Handotai Co Ltd Method of manufacturing high-luminance light-emitting diode
WO2013041279A1 (en) * 2011-09-23 2013-03-28 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor chip
KR101412142B1 (en) 2012-09-13 2014-06-25 광전자 주식회사 AlGaInP light emitting diode with n-type GaN window layer and preparation thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04315479A (en) * 1991-04-12 1992-11-06 Mitsubishi Cable Ind Ltd Semiconductor light-emitting element and manufacture thereof
JP2004281825A (en) * 2003-03-17 2004-10-07 Hitachi Cable Ltd Method of manufacturing light emitting diode
WO2006129595A1 (en) * 2005-05-31 2006-12-07 Shin-Etsu Handotai Co., Ltd. Process for producing luminescent element

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04315479A (en) * 1991-04-12 1992-11-06 Mitsubishi Cable Ind Ltd Semiconductor light-emitting element and manufacture thereof
JP2004281825A (en) * 2003-03-17 2004-10-07 Hitachi Cable Ltd Method of manufacturing light emitting diode
WO2006129595A1 (en) * 2005-05-31 2006-12-07 Shin-Etsu Handotai Co., Ltd. Process for producing luminescent element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009043983A (en) * 2007-08-09 2009-02-26 Shin Etsu Handotai Co Ltd Method of manufacturing high-luminance light-emitting diode
WO2013041279A1 (en) * 2011-09-23 2013-03-28 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor chip
KR101412142B1 (en) 2012-09-13 2014-06-25 광전자 주식회사 AlGaInP light emitting diode with n-type GaN window layer and preparation thereof

Also Published As

Publication number Publication date
JPWO2009017017A1 (en) 2010-10-21
TW200924240A (en) 2009-06-01

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