CN111463331A - 一种具有复合ito结构的led芯片及其制备方法 - Google Patents

一种具有复合ito结构的led芯片及其制备方法 Download PDF

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CN111463331A
CN111463331A CN202010269817.4A CN202010269817A CN111463331A CN 111463331 A CN111463331 A CN 111463331A CN 202010269817 A CN202010269817 A CN 202010269817A CN 111463331 A CN111463331 A CN 111463331A
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王克来
白继锋
徐培强
张银桥
王向武
潘彬
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Nanchang Kaixun Photoelectric Co ltd
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Abstract

本发明公开了一种具有复合ITO结构的LED芯片及其制备方法，属于半导体发光二极管领域，该方法是在制备的LED外延片上通过不同的氧流量蒸镀复合ITO薄膜层。复合ITO由上下两层折射率不同的ITO组成，下层ITO的厚度为λ/2n，上层ITO的厚度为λ/4n，且下层ITO的折射率大于上层ITO。本发明提供的复合ITO结构中下层ITO主要起到电流扩展作用，上层ITO起到增透的作用。本发明提高了芯片的出光效率，实现了芯片亮度的提升。

Description

一种具有复合ITO结构的LED芯片及其制备方法
技术领域
本发明涉及半导体发光二极管领域，尤其涉及一种具有复合ITO结构的LED芯片及其制备方法。
背景技术
LED具有高光效、低能耗、长寿命、高环保等优势，早已成为日常生活中不可或缺的光电元器件，目前已广泛应用于高效固态照明领域中，如数码管、显示屏、背光源、汽车用灯、交通信号灯、景观照明等。
目前，LED由于光提取效率低，使得外量子效率不高，因此LED主要的问题集中在如何将光从半导体材料内部提取出来。最常用的办法是在外延层顶端生长一层电流扩展层，电流扩展层可以将载流子扩展到电极以外，从而使部分的光能够避开不透明的电极对光的反射。ITO薄膜具有透过率高、电阻率低和良好的横向电流扩展等性能，常常被用于作为LED的电流扩展层。现有技术中，ITO薄膜仅仅作为电流扩展层在芯片中起到电流扩展的作用，并没有完全的发挥出它的有益功效，存在改进的地方。
发明内容
为了让ITO在LED中发挥更大的功效，进一步提高光提取效率，本发明提供了一种具有复合ITO结构的LED芯片及其制备方法。
本发明的第一个目的在于提供一种具有复合ITO结构的LED芯片。
本发明的第二个目的在于提供一种具有复合ITO结构的LED芯片的其制备方法。
本发明的第一个目的是这样实现：
一种具有复合ITO结构的LED芯片，包括GaAs衬底，所述GaAs衬底一侧依此从下往上设置缓冲层、布拉格反射层、n-AlGaInP限制层、多量子阱有源层、p-AlGaInP限制层、GaP窗口层、复合ITO层、p电极层，所述复合ITO层为上下两层组成的复合结构，且下层ITO的折射率大于上层ITO，所述GaAs衬底另一侧设置n电极层。
所述下层ITO的折射率≥1.7，上层ITO的折射率≤1.6，所述下层ITO的厚度为λ/2n，上层ITO的厚度为λ/4n。
本发明通过将ITO层设置为上下两层组成的复合结构，下层ITO主要起到电流扩展的作用，上层ITO能够使两列反射光干涉相消，整个反射光减弱或消失，从而使透射光增强，起到增透的效果。复合ITO层设计成梯度变化的折射率，在保证了电导率的同时，减小了LED界面与空气的折射率差值，从而增大有源层发出的光从LED内部出射到空气的临界角，极大的提高了光提取效率，实现了LED芯片亮度的提升。
本发明的第二个目的是这样实现的：
一种具有复合ITO结构的LED芯片的制备方法，特征是：具体步骤如下：
(1)制作LED外延片：在GaAs衬底一侧采用金属有机化学气相沉积依次从下往上生长缓冲层、布拉格反射层、n-AlGaInP限制层、多量子阱有源层、p-AlGaInP限制层、GaP窗口层；
(2)在GaP窗口层上蒸镀复合ITO层；
(3)采用负胶套刻和蒸镀方式制作p电极层；
(4)减薄GaAs衬底，在衬底背面制作n电极层；
(5)利用管芯切割机将外延片分离得到芯片。
在步骤(2)中，复合ITO层主要通过改变在蒸镀过程中的氧流量得到，蒸镀下层ITO时氧流量为6-10sccm，蒸镀上层ITO时氧流量为12-20sccm。
本发明通过调整蒸镀过程中的氧流量来得到复合ITO层，ITO的折射率和电导率都随着氧流量的增加而降低，蒸镀下层ITO时使用较低的氧流量可以得到电导率较高的ITO，从而保证了电流扩展的效果，蒸镀上层ITO时提高氧流量可以得到折射率较低的ITO，增大LED内部出射到空气的光的临界角，本发明工艺简单，重复性高，对于产业化生产具有现实意义。
附图说明
图1为本发明的结构示意图。
图2为本发明发光二极管外延片的制作过程截面示意图；
图3为本发明发光二极管复合ITO层的制作过程截面示意图；
图4为本发明发光二极管p电极层的制作过程截面示意图；
图5为本发明发光二极管n电极层的制作过程截面示意图；
附图标记：n电极层1、GaAs衬底2、缓冲层3、布拉格反射层4、n-AlGaInP限制层5、多量子阱有源层6、p-AlGaInP限制层7、GaP窗口层8、复合ITO层9、下层ITO91、上层ITO92、p电极层10。
具体实施方式
下面结合附图，对实施例进行详细说明。
一种具有复合ITO结构的LED芯片，如图1所示，包括GaAs衬底2，所述GaAs衬底2一侧依此从下往上设置缓冲层3、布拉格反射层4、n-AlGaInP限制层5、多量子阱有源层6、p-AlGaInP限制层7、GaP窗口层8、复合ITO层9、p电极层10，所述复合ITO层9为上下两层组成的复合结构，且下层ITO91的折射率大于上层ITO92，所述GaAs衬底2另一侧设置n电极层1，所述下层ITO91的折射率≥1.7，上层ITO92的折射率≤1.6，所述下层ITO91的厚度为λ/2n，上层ITO92的厚度为λ/4n，所述下层ITO91主要起到电流扩展的作用，上层ITO92能够使两列反射光干涉相消，整个反射光减弱或消失，从而使透射光增强，起到增透的效果，极大的提高了光提取效率，实现了LED芯片亮度的提升。
一种具有复合ITO结构的LED芯片及其制造方法，包括以下步骤：
(1)制作LED外延片：如图2所示，在GaAs衬底2一侧采用金属有机化学气相沉积依次从下往上生长缓冲层3、布拉格反射层4、n-AlGaInP限制层5、多量子阱有源层6、p-AlGaInP限制层7、GaP窗口层8；
(2)如图3所示，在GaP窗口层上蒸镀复合ITO层9；
(3)如图4所示，采用负胶套刻和蒸镀方式制作p电极层10；
(4)如图5所示，减薄GaAs衬底，在衬底背面制作n电极层1；
(5)利用管芯切割机将外延片分离得到芯片。
在步骤(2)中，复合ITO层9主要通过改变在蒸镀过程中的氧流量得到，蒸镀下层ITO91时氧流量为8sccm，蒸镀上层ITO92时氧流量为14sccm。
以上列举的仅是本发明的具体实施例之一。显然，本发明不限于以上实施例，还可以有许多类似的变形。本领域的普通技术人员能从本发明公开的内容直接导出或联想到的所有变形，均应认为是本发明所要保护的范围。

Claims (4)

1.一种具有复合ITO结构的LED芯片，其特征在于：包括GaAs衬底(2)，所述GaAs衬底(2)一侧依此从下往上设置缓冲层(3)、布拉格反射层(4)、n-AlGaInP限制层(5)、多量子阱有源层(6)、p-AlGaInP限制层(7)、GaP窗口层(8)、复合ITO层(9)、p电极层(10)，所述复合ITO层(9)为上下两层组成的复合结构，且下层ITO(91)的折射率大于上层ITO(92)，所述GaAs衬底(2)另一侧设置n电极层(1)。
2.根据权利要求1所述的具有复合ITO结构的LED芯片，其特征在于：所述下层ITO(91)的折射率≥1.7，上层ITO(92)的折射率≤1.6，所述下层ITO(91)的厚度为λ/2n，上层ITO(92)的厚度为λ/4n。
3.一种具有复合ITO结构的LED芯片的制备方法，其特征在于：具体步骤如下：
(1)制作LED外延片：在GaAs衬底(2)一侧采用金属有机化学气相沉积依次从下往上生长缓冲层(3)、布拉格反射层(4)、n-AlGaInP限制层(5)、多量子阱有源层(6)、p-AlGaInP限制层(7)、GaP窗口层(8)；
(2)在GaP窗口层(8)上蒸镀复合ITO层(9)；
(3)采用负胶套刻和蒸镀方式制作p电极层(10)；
(4)减薄GaAs衬底，在衬底背面制作n电极层(1)；
(5)利用管芯切割机将外延片分离得到芯片。
4.根据权利要求3所述的LED芯片的制备方法，其特征在于：在步骤(2)中，复合ITO层(9)主要通过改变在蒸镀过程中的氧流量得到，蒸镀下层ITO(91)时氧流量为8sccm，蒸镀上层ITO(92)时氧流量为14sccm。
CN202010269817.4A 2020-04-08 2020-04-08 一种具有复合ito结构的led芯片及其制备方法 Pending CN111463331A (zh)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102832299A (zh) * 2011-06-17 2012-12-19 广东量晶光电科技有限公司 一种层状透明导电层led芯片的制备方法
CN103078020A (zh) * 2012-08-03 2013-05-01 光达光电设备科技（嘉兴）有限公司 Led外延结构
CN103367580A (zh) * 2013-07-25 2013-10-23 马鞍山圆融光电科技有限公司 一种高出光效率的发光二极管芯片及其制作方法
CN104269477A (zh) * 2014-09-25 2015-01-07 西安神光皓瑞光电科技有限公司 一种高紫外透光率的p型欧姆接触层制备方法
US20170098741A1 (en) * 2015-10-02 2017-04-06 Seoul Viosys Co., Ltd. Light emitting diode devices with zinc oxide layer
CN109346571A (zh) * 2018-10-18 2019-02-15 扬州乾照光电有限公司 一种窗口层表面粗化的发光二极管及其制作方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102832299A (zh) * 2011-06-17 2012-12-19 广东量晶光电科技有限公司 一种层状透明导电层led芯片的制备方法
CN103078020A (zh) * 2012-08-03 2013-05-01 光达光电设备科技（嘉兴）有限公司 Led外延结构
CN103367580A (zh) * 2013-07-25 2013-10-23 马鞍山圆融光电科技有限公司 一种高出光效率的发光二极管芯片及其制作方法
CN104269477A (zh) * 2014-09-25 2015-01-07 西安神光皓瑞光电科技有限公司 一种高紫外透光率的p型欧姆接触层制备方法
US20170098741A1 (en) * 2015-10-02 2017-04-06 Seoul Viosys Co., Ltd. Light emitting diode devices with zinc oxide layer
CN109346571A (zh) * 2018-10-18 2019-02-15 扬州乾照光电有限公司 一种窗口层表面粗化的发光二极管及其制作方法

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Application publication date: 20200728