WO2009014111A1 - 基板温度計測装置及び基板温度計測方法 - Google Patents

基板温度計測装置及び基板温度計測方法 Download PDF

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Publication number
WO2009014111A1
WO2009014111A1 PCT/JP2008/063117 JP2008063117W WO2009014111A1 WO 2009014111 A1 WO2009014111 A1 WO 2009014111A1 JP 2008063117 W JP2008063117 W JP 2008063117W WO 2009014111 A1 WO2009014111 A1 WO 2009014111A1
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WO
WIPO (PCT)
Prior art keywords
temperature measuring
substrate temperature
substrate
measuring apparatus
measuring method
Prior art date
Application number
PCT/JP2008/063117
Other languages
English (en)
French (fr)
Inventor
Ken Nakahara
Masashi Kawasaki
Akira Ohtomo
Atsushi Tsukazaki
Original Assignee
Rohm Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co., Ltd. filed Critical Rohm Co., Ltd.
Priority to US12/452,809 priority Critical patent/US20100183045A1/en
Priority to CN200880106813A priority patent/CN101802574A/zh
Publication of WO2009014111A1 publication Critical patent/WO2009014111A1/ja

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
    • G01J5/0007—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter of wafers or semiconductor substrates, e.g. using Rapid Thermal Processing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0875—Windows; Arrangements for fastening thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/80—Calibration
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/48—Thermography; Techniques using wholly visual means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Radiation Pyrometers (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

　基板を加熱する加熱源と、基板を透過できない波長領域の赤外線を透過させる透過窓と、基板を透過できない波長領域を感度範囲に含み、加熱源により加熱された基板から放射され、透過窓を透過した赤外線を分析して基板の基板温度を計測する温度計測器とを備える。
PCT/JP2008/063117 2007-07-23 2008-07-22 基板温度計測装置及び基板温度計測方法 WO2009014111A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/452,809 US20100183045A1 (en) 2007-07-23 2008-07-22 Substrate temperature measuring apparatus and substrate temperature measuring method
CN200880106813A CN101802574A (zh) 2007-07-23 2008-07-22 基板温度测量装置及基板温度测量方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007191358A JP2009027100A (ja) 2007-07-23 2007-07-23 基板温度計測装置及び基板温度計測方法
JP2007-191358 2007-07-23

Publications (1)

Publication Number Publication Date
WO2009014111A1 true WO2009014111A1 (ja) 2009-01-29

Family

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PCT/JP2008/063117 WO2009014111A1 (ja) 2007-07-23 2008-07-22 基板温度計測装置及び基板温度計測方法

Country Status (5)

Country Link
US (1) US20100183045A1 (ja)
JP (1) JP2009027100A (ja)
CN (1) CN101802574A (ja)
TW (1) TW200921804A (ja)
WO (1) WO2009014111A1 (ja)

Cited By (1)

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CN102653852A (zh) * 2011-03-03 2012-09-05 住友重机械工业株式会社 成膜装置

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CN102484041B (zh) * 2009-08-21 2015-09-23 第一太阳能有限公司 高温计
JP5338569B2 (ja) * 2009-08-26 2013-11-13 豊田合成株式会社 化合物半導体の製造方法および積層半導体ウェーハの製造方法
CN101904552B (zh) * 2010-09-09 2012-10-10 中国烟草总公司郑州烟草研究院 带有测定烟草物料温度的滚筒类设备及其测定方法
EP2772728B1 (en) 2011-10-27 2017-08-09 Tyco Electronics Japan G.K. Detecting sensor manufacturing method
US9151597B2 (en) * 2012-02-13 2015-10-06 First Solar, Inc. In situ substrate detection for a processing system using infrared detection
CN103389170B (zh) 2012-05-07 2015-08-19 中微半导体设备(上海)有限公司 一种真空处理装置的基片温度测量方法和装置
TWI563542B (en) * 2014-11-21 2016-12-21 Hermes Epitek Corp Approach of controlling the wafer and the thin film surface temperature
JP6732051B2 (ja) * 2017-01-13 2020-07-29 三菱電機株式会社 基板処理装置および基板の製造方法
US11363709B2 (en) 2017-02-24 2022-06-14 BWXT Isotope Technology Group, Inc. Irradiation targets for the production of radioisotopes
JP6907951B2 (ja) * 2018-01-11 2021-07-21 トヨタ自動車株式会社 ヒートシンクの検査方法、検査装置及び生産方法、生産システム
US11926925B2 (en) * 2019-11-12 2024-03-12 The Johns Hopkins University Molecular-beam epitaxy system comprising an infrared radiation emitting heater and a thermally conductive backing plate including an infrared-absorbing coating thereon

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Publication number Priority date Publication date Assignee Title
CN102653852A (zh) * 2011-03-03 2012-09-05 住友重机械工业株式会社 成膜装置
CN102653852B (zh) * 2011-03-03 2014-12-10 住友重机械工业株式会社 成膜装置

Also Published As

Publication number Publication date
CN101802574A (zh) 2010-08-11
TW200921804A (en) 2009-05-16
JP2009027100A (ja) 2009-02-05
US20100183045A1 (en) 2010-07-22

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