WO2009014111A1 - 基板温度計測装置及び基板温度計測方法 - Google Patents

基板温度計測装置及び基板温度計測方法 Download PDF

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Publication number
WO2009014111A1
WO2009014111A1 PCT/JP2008/063117 JP2008063117W WO2009014111A1 WO 2009014111 A1 WO2009014111 A1 WO 2009014111A1 JP 2008063117 W JP2008063117 W JP 2008063117W WO 2009014111 A1 WO2009014111 A1 WO 2009014111A1
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WIPO (PCT)
Prior art keywords
temperature measuring
substrate temperature
substrate
measuring apparatus
measuring method
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Ceased
Application number
PCT/JP2008/063117
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English (en)
French (fr)
Inventor
Ken Nakahara
Masashi Kawasaki
Akira Ohtomo
Atsushi Tsukazaki
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Rohm Co Ltd
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Rohm Co Ltd
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Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to CN200880106813A priority Critical patent/CN101802574A/zh
Priority to US12/452,809 priority patent/US20100183045A1/en
Publication of WO2009014111A1 publication Critical patent/WO2009014111A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
    • G01J5/0007—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter of wafers or semiconductor substrates, e.g. using Rapid Thermal Processing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0875—Windows; Arrangements for fastening thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/80—Calibration
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/48—Thermography; Techniques using wholly visual means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3426—Oxides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Radiation Pyrometers (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

　基板を加熱する加熱源と、基板を透過できない波長領域の赤外線を透過させる透過窓と、基板を透過できない波長領域を感度範囲に含み、加熱源により加熱された基板から放射され、透過窓を透過した赤外線を分析して基板の基板温度を計測する温度計測器とを備える。
PCT/JP2008/063117 2007-07-23 2008-07-22 基板温度計測装置及び基板温度計測方法 Ceased WO2009014111A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN200880106813A CN101802574A (zh) 2007-07-23 2008-07-22 基板温度测量装置及基板温度测量方法
US12/452,809 US20100183045A1 (en) 2007-07-23 2008-07-22 Substrate temperature measuring apparatus and substrate temperature measuring method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007191358A JP2009027100A (ja) 2007-07-23 2007-07-23 基板温度計測装置及び基板温度計測方法
JP2007-191358 2007-07-23

Publications (1)

Publication Number Publication Date
WO2009014111A1 true WO2009014111A1 (ja) 2009-01-29

Family

ID=40281362

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PCT/JP2008/063117 Ceased WO2009014111A1 (ja) 2007-07-23 2008-07-22 基板温度計測装置及び基板温度計測方法

Country Status (5)

Country Link
US (1) US20100183045A1 (ja)
JP (1) JP2009027100A (ja)
CN (1) CN101802574A (ja)
TW (1) TW200921804A (ja)
WO (1) WO2009014111A1 (ja)

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CN102653852A (zh) * 2011-03-03 2012-09-05 住友重机械工业株式会社 成膜装置
JP2022076258A (ja) * 2020-11-09 2022-05-19 ウシオ電機株式会社 温度測定方法、温度測定装置及び光加熱装置

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US20110046916A1 (en) * 2009-08-21 2011-02-24 First Solar, Inc. Pyrometer
JP5338569B2 (ja) * 2009-08-26 2013-11-13 豊田合成株式会社 化合物半導体の製造方法および積層半導体ウェーハの製造方法
CN101904552B (zh) * 2010-09-09 2012-10-10 中国烟草总公司郑州烟草研究院 带有测定烟草物料温度的滚筒类设备及其测定方法
JP5724106B2 (ja) 2011-10-27 2015-05-27 タイコエレクトロニクスジャパン合同会社 検出センサの製造方法、検出センサ、トランスミッション
US9151597B2 (en) * 2012-02-13 2015-10-06 First Solar, Inc. In situ substrate detection for a processing system using infrared detection
CN103389170B (zh) * 2012-05-07 2015-08-19 中微半导体设备(上海)有限公司 一种真空处理装置的基片温度测量方法和装置
TWI563542B (en) * 2014-11-21 2016-12-21 Hermes Epitek Corp Approach of controlling the wafer and the thin film surface temperature
DE112017006821B4 (de) * 2017-01-13 2024-10-17 Mitsubishi Electric Corporation Substratverarbeitungsvorrichtung und substratherstellungsverfahren
US11286172B2 (en) 2017-02-24 2022-03-29 BWXT Isotope Technology Group, Inc. Metal-molybdate and method for making the same
US11363709B2 (en) 2017-02-24 2022-06-14 BWXT Isotope Technology Group, Inc. Irradiation targets for the production of radioisotopes
JP6907951B2 (ja) * 2018-01-11 2021-07-21 トヨタ自動車株式会社 ヒートシンクの検査方法、検査装置及び生産方法、生産システム
US11926925B2 (en) * 2019-11-12 2024-03-12 The Johns Hopkins University Molecular-beam epitaxy system comprising an infrared radiation emitting heater and a thermally conductive backing plate including an infrared-absorbing coating thereon
JP7450373B2 (ja) * 2019-11-26 2024-03-15 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP7355641B2 (ja) * 2019-12-24 2023-10-03 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置、および、熱処理方法
US11342484B2 (en) 2020-05-11 2022-05-24 Silanna UV Technologies Pte Ltd Metal oxide semiconductor-based light emitting device
EP4423325A4 (en) * 2021-10-27 2025-08-27 Silanna UV Technologies Pte Ltd METHODS AND SYSTEMS FOR HEATING A WIDE BANDGAP SUBSTRATE
CN119717101A (zh) * 2023-09-26 2025-03-28 中国科学院赣江创新研究院 一种红外窗口结构及其制备方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102653852A (zh) * 2011-03-03 2012-09-05 住友重机械工业株式会社 成膜装置
CN102653852B (zh) * 2011-03-03 2014-12-10 住友重机械工业株式会社 成膜装置
JP2022076258A (ja) * 2020-11-09 2022-05-19 ウシオ電機株式会社 温度測定方法、温度測定装置及び光加熱装置
JP7721885B2 (ja) 2020-11-09 2025-08-13 ウシオ電機株式会社 温度測定方法、温度測定装置及び光加熱装置

Also Published As

Publication number Publication date
US20100183045A1 (en) 2010-07-22
JP2009027100A (ja) 2009-02-05
TW200921804A (en) 2009-05-16
CN101802574A (zh) 2010-08-11

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