WO2009001866A1 - 載置台構造及び熱処理装置 - Google Patents

載置台構造及び熱処理装置 Download PDF

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Publication number
WO2009001866A1
WO2009001866A1 PCT/JP2008/061568 JP2008061568W WO2009001866A1 WO 2009001866 A1 WO2009001866 A1 WO 2009001866A1 JP 2008061568 W JP2008061568 W JP 2008061568W WO 2009001866 A1 WO2009001866 A1 WO 2009001866A1
Authority
WO
WIPO (PCT)
Prior art keywords
placement table
column
table structure
heat treatment
treatment device
Prior art date
Application number
PCT/JP2008/061568
Other languages
English (en)
French (fr)
Inventor
Sumi Tanaka
Hiroo Kawasaki
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Priority to KR1020097026850A priority Critical patent/KR101274864B1/ko
Priority to CN2008800225667A priority patent/CN101689486B/zh
Publication of WO2009001866A1 publication Critical patent/WO2009001866A1/ja
Priority to US12/647,985 priority patent/US20100163183A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

Abstract

　本発明は、同心円状に区画された複数の加熱ゾーンに各々配置された複数の加熱ヒータ部からなる加熱手段を有すると共に、熱処理の対象となる被処理体をその上に載置するための載置台と、前記複数の加熱ゾーンに各々設けられた複数の温度測定手段と、前記載置台を起立させて支持するための中空の支柱と、を備えた載置台構造に関する。前記支柱の直径は、その下端部側から上端部に向かうに従って、順次拡大されており、前記支柱の上端部は、前記載置台の裏面に接合されている。各温度測定手段の測定手段本体は、前記中空の支柱内と前記支柱の側壁に設けられた挿通路内と、に挿通されている。
PCT/JP2008/061568 2007-06-28 2008-06-25 載置台構造及び熱処理装置 WO2009001866A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020097026850A KR101274864B1 (ko) 2007-06-28 2008-06-25 탑재대 구조 및 열처리 장치
CN2008800225667A CN101689486B (zh) 2007-06-28 2008-06-25 载置台构造和热处理装置
US12/647,985 US20100163183A1 (en) 2007-06-28 2009-12-28 Mounting table structure and heat treatment apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007170657A JP5135915B2 (ja) 2007-06-28 2007-06-28 載置台構造及び熱処理装置
JP2007-170657 2007-06-28

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/647,985 Continuation US20100163183A1 (en) 2007-06-28 2009-12-28 Mounting table structure and heat treatment apparatus

Publications (1)

Publication Number Publication Date
WO2009001866A1 true WO2009001866A1 (ja) 2008-12-31

Family

ID=40185678

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/061568 WO2009001866A1 (ja) 2007-06-28 2008-06-25 載置台構造及び熱処理装置

Country Status (5)

Country Link
US (1) US20100163183A1 (ja)
JP (1) JP5135915B2 (ja)
KR (1) KR101274864B1 (ja)
CN (1) CN101689486B (ja)
WO (1) WO2009001866A1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012039453A1 (ja) * 2010-09-24 2012-03-29 日本碍子株式会社 半導体製造装置部材
JP2013528943A (ja) * 2011-04-13 2013-07-11 ノベルス・システムズ・インコーポレーテッド ペデスタルカバー
US8920162B1 (en) 2007-11-08 2014-12-30 Novellus Systems, Inc. Closed loop temperature heat up and control utilizing wafer-to-heater pedestal gap modulation
US9835388B2 (en) 2012-01-06 2017-12-05 Novellus Systems, Inc. Systems for uniform heat transfer including adaptive portions
US10347547B2 (en) 2016-08-09 2019-07-09 Lam Research Corporation Suppressing interfacial reactions by varying the wafer temperature throughout deposition

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TWI472882B (zh) * 2008-05-06 2015-02-11 Novellus Systems Inc 光阻剝離方法及設備
JP5476726B2 (ja) * 2009-01-30 2014-04-23 住友電気工業株式会社 半導体製造装置用ウエハ保持体、及びそれを備えた半導体製造装置
KR101108337B1 (ko) * 2009-12-31 2012-01-25 주식회사 디엠에스 2단의 냉매 유로를 포함하는 정전척의 온도제어장치
JP5882614B2 (ja) * 2011-06-29 2016-03-09 株式会社日本セラテック セラミックスヒータ
US10553463B2 (en) 2011-11-15 2020-02-04 Tokyo Electron Limited Temperature control system, semiconductor manufacturing device, and temperature control method
JP5912439B2 (ja) * 2011-11-15 2016-04-27 東京エレクトロン株式会社 温度制御システム、半導体製造装置及び温度制御方法
US8941969B2 (en) * 2012-12-21 2015-01-27 Applied Materials, Inc. Single-body electrostatic chuck
US9698074B2 (en) * 2013-09-16 2017-07-04 Applied Materials, Inc. Heated substrate support with temperature profile control
US9738975B2 (en) 2015-05-12 2017-08-22 Lam Research Corporation Substrate pedestal module including backside gas delivery tube and method of making
US10020218B2 (en) 2015-11-17 2018-07-10 Applied Materials, Inc. Substrate support assembly with deposited surface features
JP1575661S (ja) * 2015-11-24 2017-05-08
JP6912497B2 (ja) * 2016-12-01 2021-08-04 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、天井ヒータおよび半導体装置の製造方法
CN110088356A (zh) * 2016-12-08 2019-08-02 Tes股份有限公司 有机金属化学气相沉积装置
WO2018106039A1 (ko) * 2016-12-08 2018-06-14 주식회사 테스 유기금속화학기상증착장치
JP6960737B2 (ja) * 2017-01-23 2021-11-05 株式会社日立ハイテク 真空処理装置
US11725285B2 (en) 2018-07-31 2023-08-15 Lam Research Corporation Preventing deposition on pedestal in semiconductor substrate processing
JP6959201B2 (ja) 2018-08-29 2021-11-02 日本碍子株式会社 セラミックヒータ
USD1013750S1 (en) * 2020-09-18 2024-02-06 Ksm Component Co., Ltd. Ceramic heater
USD1012998S1 (en) * 2020-09-18 2024-01-30 Ksm Component Co., Ltd. Ceramic heater
USD1012997S1 (en) * 2020-09-18 2024-01-30 Ksm Component Co., Ltd. Ceramic heater
JP2022187213A (ja) * 2021-06-07 2022-12-19 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置

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JP2004115904A (ja) * 2002-09-30 2004-04-15 Hitachi Kokusai Electric Inc 基板処理装置

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US7618494B2 (en) * 2003-08-18 2009-11-17 Tokyo Electron Limited Substrate holding structure and substrate processing device
JP2006236867A (ja) * 2005-02-25 2006-09-07 Ngk Insulators Ltd プラズマ処理部材
JP2006324610A (ja) * 2005-05-20 2006-11-30 Matsushita Electric Ind Co Ltd 基板処理装置及び基板処理方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003197535A (ja) * 2001-12-21 2003-07-11 Sumitomo Mitsubishi Silicon Corp 気相成長装置および気相成長装置の温度検出方法ならびに温度制御方法
JP2004115904A (ja) * 2002-09-30 2004-04-15 Hitachi Kokusai Electric Inc 基板処理装置

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8920162B1 (en) 2007-11-08 2014-12-30 Novellus Systems, Inc. Closed loop temperature heat up and control utilizing wafer-to-heater pedestal gap modulation
WO2012039453A1 (ja) * 2010-09-24 2012-03-29 日本碍子株式会社 半導体製造装置部材
US8790007B2 (en) 2010-09-24 2014-07-29 Ngk Insulators, Ltd. Semiconductor manufacturing apparatus member
JP2013528943A (ja) * 2011-04-13 2013-07-11 ノベルス・システムズ・インコーポレーテッド ペデスタルカバー
US8851463B2 (en) 2011-04-13 2014-10-07 Novellus Systems, Inc. Pedestal covers
US9835388B2 (en) 2012-01-06 2017-12-05 Novellus Systems, Inc. Systems for uniform heat transfer including adaptive portions
US10347547B2 (en) 2016-08-09 2019-07-09 Lam Research Corporation Suppressing interfacial reactions by varying the wafer temperature throughout deposition
US11075127B2 (en) 2016-08-09 2021-07-27 Lam Research Corporation Suppressing interfacial reactions by varying the wafer temperature throughout deposition

Also Published As

Publication number Publication date
JP2009010195A (ja) 2009-01-15
JP5135915B2 (ja) 2013-02-06
CN101689486B (zh) 2011-12-28
US20100163183A1 (en) 2010-07-01
KR101274864B1 (ko) 2013-06-13
CN101689486A (zh) 2010-03-31
KR20100031110A (ko) 2010-03-19

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