WO2008156140A1 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
WO2008156140A1
WO2008156140A1 PCT/JP2008/061246 JP2008061246W WO2008156140A1 WO 2008156140 A1 WO2008156140 A1 WO 2008156140A1 JP 2008061246 W JP2008061246 W JP 2008061246W WO 2008156140 A1 WO2008156140 A1 WO 2008156140A1
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WO
WIPO (PCT)
Prior art keywords
insulating film
gate insulating
semiconductor layer
region
drain region
Prior art date
Application number
PCT/JP2008/061246
Other languages
English (en)
French (fr)
Inventor
Mitsuo Kojima
Shoji Takei
Original Assignee
Rohm Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co., Ltd. filed Critical Rohm Co., Ltd.
Priority to US12/452,169 priority Critical patent/US8513766B2/en
Publication of WO2008156140A1 publication Critical patent/WO2008156140A1/ja
Priority to US13/941,458 priority patent/US8878294B2/en

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    • H—ELECTRICITY
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)

Abstract

　本発明の半導体装置は、半導体層と、前記半導体層の表層部に形成されるソース領域と、前記半導体層の表層部に前記ソース領域と間隔を空けて形成されるドレイン領域と、前記半導体層の表面上において、前記ソース領域と前記ドレイン領域との間に対向する領域に形成されるゲート絶縁膜と、前記ゲート絶縁膜上に形成されるゲート電極と、前記ドレイン領域と前記ゲート絶縁膜との間に介在され、前記ドレイン領域と前記ゲート絶縁膜とを非接触状態に分離するためのドレイン－ゲート分離部とを備えている。
PCT/JP2008/061246 2007-06-19 2008-06-19 半導体装置 WO2008156140A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/452,169 US8513766B2 (en) 2007-06-19 2008-06-19 Semiconductor device having a drain-gate isolation portion
US13/941,458 US8878294B2 (en) 2007-06-19 2013-07-13 Semiconductor device having a drain-gate isolation portion

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007161493A JP5172223B2 (ja) 2007-06-19 2007-06-19 半導体装置
JP2007-161493 2007-06-19

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/452,169 A-371-Of-International US8513766B2 (en) 2007-06-19 2008-06-19 Semiconductor device having a drain-gate isolation portion
US13/941,458 Continuation US8878294B2 (en) 2007-06-19 2013-07-13 Semiconductor device having a drain-gate isolation portion

Publications (1)

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WO2008156140A1 true WO2008156140A1 (ja) 2008-12-24

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PCT/JP2008/061246 WO2008156140A1 (ja) 2007-06-19 2008-06-19 半導体装置

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JP (1) JP5172223B2 (ja)
WO (1) WO2008156140A1 (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5448788B2 (ja) 2009-12-22 2014-03-19 ルネサスエレクトロニクス株式会社 半導体装置
JP2014207361A (ja) * 2013-04-15 2014-10-30 富士通セミコンダクター株式会社 半導体装置及びその製造方法
US20150048875A1 (en) * 2013-08-19 2015-02-19 Ememory Technology Inc. High voltage power control system
TW202329325A (zh) * 2022-01-10 2023-07-16 聯華電子股份有限公司 半導體裝置及其製作方法

Citations (2)

* Cited by examiner, † Cited by third party
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