WO2008143174A1 - 広帯域低雑音増幅器 - Google Patents

広帯域低雑音増幅器 Download PDF

Info

Publication number
WO2008143174A1
WO2008143174A1 PCT/JP2008/059033 JP2008059033W WO2008143174A1 WO 2008143174 A1 WO2008143174 A1 WO 2008143174A1 JP 2008059033 W JP2008059033 W JP 2008059033W WO 2008143174 A1 WO2008143174 A1 WO 2008143174A1
Authority
WO
WIPO (PCT)
Prior art keywords
transistor
terminal
passive element
wide
noise amplifier
Prior art date
Application number
PCT/JP2008/059033
Other languages
English (en)
French (fr)
Inventor
Munenari Kawashima
You Yamaguchi
Kazuhiro Uehara
Kenjiro Nishikawa
Original Assignee
Nippon Telegraph And Telephone Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph And Telephone Corporation filed Critical Nippon Telegraph And Telephone Corporation
Priority to US12/595,163 priority Critical patent/US8004363B2/en
Priority to AT08752875T priority patent/ATE521131T1/de
Priority to EP08752875A priority patent/EP2148433B1/en
Publication of WO2008143174A1 publication Critical patent/WO2008143174A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/34—Negative-feedback-circuit arrangements with or without positive feedback
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/42—Modifications of amplifiers to extend the bandwidth
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/108—A coil being added in the drain circuit of a FET amplifier stage, e.g. for noise reducing purposes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/144—Indexing scheme relating to amplifiers the feedback circuit of the amplifier stage comprising a passive resistor and passive capacitor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/151—A source follower being used in a feedback circuit of an amplifier stage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/222—A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/36—Indexing scheme relating to amplifiers the amplifier comprising means for increasing the bandwidth
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

　　本発明の広帯域低雑音増幅器は、入力端子を第１のトランジスタのベース端子及び第１の受動素子の一端及び第３の受動素子の一端に接続し、第１のトランジスタのエミッタ端子を接地し、第１のトランジスタのコレクタ端子を出力端子及び第２のトランジスタのベース端子及び容量素子の一端及び第２の受動素子の一端に接続し、第１の受動素子の他端を容量素子の他端に接続し、第２のトランジスタのエミッタ端子を第３の受動素子の他端に接続し、電源端子を第２のトランジスタのコレクタ端子及び第２の受動素子の他端に接続して構成され、増幅器の所望飽和レベルに適合するようエミッタサイズを決定した第１のトランジスタのインピーダンスに対応し、第３の受動素子のインピーダンス値を決定し、入力インピーダンスを整合する。
PCT/JP2008/059033 2007-05-16 2008-05-16 広帯域低雑音増幅器 WO2008143174A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/595,163 US8004363B2 (en) 2007-05-16 2008-05-16 Wideband low-noise amplifier
AT08752875T ATE521131T1 (de) 2007-05-16 2008-05-16 Rauscharmer weitbereichsverstärker
EP08752875A EP2148433B1 (en) 2007-05-16 2008-05-16 Wide-range low-noise amplifier

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-131076 2007-05-16
JP2007131076A JP4857189B2 (ja) 2007-05-16 2007-05-16 広帯域低雑音増幅器

Publications (1)

Publication Number Publication Date
WO2008143174A1 true WO2008143174A1 (ja) 2008-11-27

Family

ID=40031876

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/059033 WO2008143174A1 (ja) 2007-05-16 2008-05-16 広帯域低雑音増幅器

Country Status (6)

Country Link
US (1) US8004363B2 (ja)
EP (1) EP2148433B1 (ja)
JP (1) JP4857189B2 (ja)
KR (1) KR101098024B1 (ja)
AT (1) ATE521131T1 (ja)
WO (1) WO2008143174A1 (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101561951B1 (ko) * 2009-10-21 2015-10-20 삼성전자 주식회사 휴대 단말기의 전력 소모 제어 방법 및 장치
US8451063B2 (en) 2010-09-29 2013-05-28 Hitachi, Ltd. Wideband low noise sensor amplifier circuit
WO2012049861A1 (ja) * 2010-10-15 2012-04-19 日本精工株式会社 電源状態診断方法及び装置
EP2466746B1 (en) * 2010-12-16 2013-09-18 TELEFONAKTIEBOLAGET LM ERICSSON (publ) Low noise amplifier
US8456237B2 (en) * 2011-03-23 2013-06-04 Integrated Device Technology, Inc. Low noise variable gain amplifier utilizing variable feedback techniques with constant input/output impedance
JP5485332B2 (ja) * 2012-05-09 2014-05-07 日本電信電話株式会社 可変利得増幅器、及び増幅回路
KR20140125936A (ko) 2013-04-19 2014-10-30 삼성전자주식회사 수동 이퀄라이저 및 이를 이용한 고속 디지털 신호 전송 시스템
JP5719467B1 (ja) * 2014-05-30 2015-05-20 日本電信電話株式会社 低雑音増幅器
TWI695579B (zh) * 2017-06-08 2020-06-01 日商村田製作所股份有限公司 功率放大電路
CN109474243B (zh) * 2018-11-30 2024-03-22 南京米乐为微电子科技有限公司 一种超宽带低噪声放大器

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5676611A (en) * 1979-11-28 1981-06-24 Fujitsu Ltd Low noise amplifying circuit
JPH09260958A (ja) * 1996-03-19 1997-10-03 Sharp Corp 高周波半導体集積回路の負帰還増幅回路
JPH11266132A (ja) * 1998-03-16 1999-09-28 Toshiba Corp 増幅回路装置
JP2002330030A (ja) * 2001-05-01 2002-11-15 Mitsubishi Electric Corp 高周波集積回路
JP2004159195A (ja) * 2002-11-07 2004-06-03 Fujitsu Ltd 増幅回路
JP2007131076A (ja) 2005-11-09 2007-05-31 Toyota Motor Corp バッテリ状態診断装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU543133A1 (ru) * 1975-01-17 1977-01-15 Предприятие П/Я В-8542 Усилитель
JPS59171204A (ja) * 1983-03-17 1984-09-27 Nec Corp バイアス回路
JPH0760975B2 (ja) * 1987-05-14 1995-06-28 日本電信電話株式会社 複合型半導体定電圧発生回路装置
JPH02180412A (ja) * 1988-12-29 1990-07-13 Sharp Corp 広帯域増幅器
JPH06338741A (ja) * 1993-05-31 1994-12-06 Casio Comput Co Ltd トランジスタ増幅器
US5661437A (en) * 1994-08-15 1997-08-26 Nippon Telegraph And Telephone Corporation Negative feedback variable gain amplifier circuit
US6429746B1 (en) * 1999-12-07 2002-08-06 Nokia Networks Oy System and method for auto-bias of an amplifier
US6452452B1 (en) * 2000-07-10 2002-09-17 Intersil Americas Inc. Negative feedback gain control for common electrode transistor
JP2002171141A (ja) * 2000-11-30 2002-06-14 Mitsubishi Electric Corp 半導体装置
JP2003273676A (ja) * 2002-03-14 2003-09-26 Kobe Steel Ltd 高周波電力制御回路
US7218175B1 (en) * 2005-04-11 2007-05-15 Sirenza Microdevices, Inc. Dynamic feedback linearization
WO2006121650A2 (en) * 2005-04-29 2006-11-16 The Regents Of The University Of California Power amplifier with an output matching network

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5676611A (en) * 1979-11-28 1981-06-24 Fujitsu Ltd Low noise amplifying circuit
JPH09260958A (ja) * 1996-03-19 1997-10-03 Sharp Corp 高周波半導体集積回路の負帰還増幅回路
JPH11266132A (ja) * 1998-03-16 1999-09-28 Toshiba Corp 増幅回路装置
JP2002330030A (ja) * 2001-05-01 2002-11-15 Mitsubishi Electric Corp 高周波集積回路
JP2004159195A (ja) * 2002-11-07 2004-06-03 Fujitsu Ltd 増幅回路
JP2007131076A (ja) 2005-11-09 2007-05-31 Toyota Motor Corp バッテリ状態診断装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
MASAYOSHI AIKAWA ET AL.: "Information and Communication Engineers", January 1997, JAPANESE INSTITUTE OF ELECTRONICS, article "Monolithic Microwave Integrated Circuit (MMIC)", pages: 97 - 99

Also Published As

Publication number Publication date
KR101098024B1 (ko) 2011-12-22
EP2148433B1 (en) 2011-08-17
US8004363B2 (en) 2011-08-23
JP4857189B2 (ja) 2012-01-18
KR20090127429A (ko) 2009-12-11
ATE521131T1 (de) 2011-09-15
US20100066452A1 (en) 2010-03-18
JP2008288817A (ja) 2008-11-27
EP2148433A1 (en) 2010-01-27
EP2148433A4 (en) 2010-05-05

Similar Documents

Publication Publication Date Title
WO2008143174A1 (ja) 広帯域低雑音増幅器
WO2008042709A3 (en) Enhanced doherty amplifier with asymmetrical semiconductors
TW200703884A (en) Miller-compensated amplifier
WO2014116687A3 (en) Amplifiers with improved isolation
WO2008027933A3 (en) Low noise amplifier with embedded filter and related wireless communication unit
WO2009020325A3 (en) Broadband power amplifier
WO2012088423A3 (en) On-die radio frequency directional coupler
WO2013113636A3 (en) Low-noise amplifier
WO2008007257A3 (en) Integrated circuit and assembly therewith
TW200713810A (en) Surge absorption circuitry
DE602007008980D1 (de) Ultrabreitband-Differenzeingang und -ausgang, Hochfrequenzaktivsplitter in einer integrierten Schaltung
CN101888210A (zh) 可变增益低噪声放大器
TW200731657A (en) Single-ended input to differential-ended output low noise amplifier implemented with cascode and cascade topology
IL205373A0 (en) Low noise, low power and high bandwidth capacitive feedback trans-impedance amplifier with differential fet input and bipolar emitter follower feedback
TW200627804A (en) Phase locked loop and applied loop filter thereof
CN204089737U (zh) 实现可变增益的高精度放大器结构
CN203104364U (zh) 一种低噪声放大电路及具有该电路的低噪声放大器
CN205509987U (zh) 一种FDD系统GaN功率管的栅极偏置电路
CN203180853U (zh) 组合型功率放大器
CN203167252U (zh) 一种音频功率整体放大电路
CN204334504U (zh) 简易的阻容耦合放大电路
DE602007002228D1 (de) Ultrabreitband-Differenzeingang und -ausgang, Hochfrequenzverstärker in einer integrierten Schaltung
CN203225708U (zh) 一种仪表放大器电路
CN204290891U (zh) 一种宽带功率放大器电路
CN203504501U (zh) 一种宽带低噪音放大器

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08752875

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 12595163

Country of ref document: US

WWE Wipo information: entry into national phase

Ref document number: 2008752875

Country of ref document: EP

ENP Entry into the national phase

Ref document number: 20097022384

Country of ref document: KR

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE