WO2008143066A1 - 半導体素子 - Google Patents

半導体素子 Download PDF

Info

Publication number
WO2008143066A1
WO2008143066A1 PCT/JP2008/058781 JP2008058781W WO2008143066A1 WO 2008143066 A1 WO2008143066 A1 WO 2008143066A1 JP 2008058781 W JP2008058781 W JP 2008058781W WO 2008143066 A1 WO2008143066 A1 WO 2008143066A1
Authority
WO
WIPO (PCT)
Prior art keywords
active layer
semiconductor element
electrodes
enhanced
values
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/058781
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
Hajime Shibata
Hitoshi Tampo
Koji Matsubara
Akimasa Yamada
Keiichiro Sakurai
Shogo Ishizuka
Shigeru Niki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
National Institute of Advanced Industrial Science and Technology AIST
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Institute of Advanced Industrial Science and Technology AIST filed Critical National Institute of Advanced Industrial Science and Technology AIST
Priority to US12/601,248 priority Critical patent/US8304804B2/en
Publication of WO2008143066A1 publication Critical patent/WO2008143066A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/823—Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO

Landscapes

  • Led Devices (AREA)
PCT/JP2008/058781 2007-05-23 2008-05-13 半導体素子 Ceased WO2008143066A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/601,248 US8304804B2 (en) 2007-05-23 2008-05-13 Semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-136859 2007-05-23
JP2007136859A JP5207511B2 (ja) 2007-05-23 2007-05-23 半導体素子

Publications (1)

Publication Number Publication Date
WO2008143066A1 true WO2008143066A1 (ja) 2008-11-27

Family

ID=40031775

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/058781 Ceased WO2008143066A1 (ja) 2007-05-23 2008-05-13 半導体素子

Country Status (3)

Country Link
US (1) US8304804B2 (enExample)
JP (1) JP5207511B2 (enExample)
WO (1) WO2008143066A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101894893A (zh) * 2010-06-08 2010-11-24 浙江大学 基于双层MgZnO薄膜异质结的电致发光器件

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9082903B2 (en) 2010-09-22 2015-07-14 First Solar, Inc. Photovoltaic device with a zinc magnesium oxide window layer
WO2014002069A2 (en) 2012-06-29 2014-01-03 Koninklijke Philips N.V. Ii-vi based light emitting semiconductor device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004193270A (ja) * 2002-12-10 2004-07-08 Sharp Corp 酸化物半導体発光素子
JP2004296796A (ja) * 2003-03-27 2004-10-21 Shin Etsu Handotai Co Ltd 発光素子および発光素子の製造方法
JP2005243955A (ja) * 2004-02-26 2005-09-08 Shin Etsu Handotai Co Ltd 発光素子およびその製造方法
JP2006086142A (ja) * 2004-09-14 2006-03-30 Shin Etsu Handotai Co Ltd 化合物半導体素子の製造方法
JP2007059667A (ja) * 2005-08-25 2007-03-08 Toshiba Lighting & Technology Corp 発光装置
JP2007123938A (ja) * 2007-01-26 2007-05-17 Rohm Co Ltd 酸化亜鉛系化合物半導体素子

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3562518B2 (ja) * 1991-02-21 2004-09-08 ソニー株式会社 半導体発光装置
EP1872415A4 (en) * 2005-03-30 2010-06-23 Moxtronics Inc Metal Oxide Semiconductor Films, Structures and Methods
DE112006002083T5 (de) * 2005-08-03 2008-06-12 Stanley Electric Co. Ltd. Halbleiter-Leuchtvorrichtung und ihr Herstellungsverfahren
JP2007273562A (ja) * 2006-03-30 2007-10-18 Toshiba Corp 半導体発光装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004193270A (ja) * 2002-12-10 2004-07-08 Sharp Corp 酸化物半導体発光素子
JP2004296796A (ja) * 2003-03-27 2004-10-21 Shin Etsu Handotai Co Ltd 発光素子および発光素子の製造方法
JP2005243955A (ja) * 2004-02-26 2005-09-08 Shin Etsu Handotai Co Ltd 発光素子およびその製造方法
JP2006086142A (ja) * 2004-09-14 2006-03-30 Shin Etsu Handotai Co Ltd 化合物半導体素子の製造方法
JP2007059667A (ja) * 2005-08-25 2007-03-08 Toshiba Lighting & Technology Corp 発光装置
JP2007123938A (ja) * 2007-01-26 2007-05-17 Rohm Co Ltd 酸化亜鉛系化合物半導体素子

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101894893A (zh) * 2010-06-08 2010-11-24 浙江大学 基于双层MgZnO薄膜异质结的电致发光器件

Also Published As

Publication number Publication date
JP5207511B2 (ja) 2013-06-12
JP2008294144A (ja) 2008-12-04
US8304804B2 (en) 2012-11-06
US20100163864A1 (en) 2010-07-01

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