JP5207511B2 - 半導体素子 - Google Patents

半導体素子 Download PDF

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Publication number
JP5207511B2
JP5207511B2 JP2007136859A JP2007136859A JP5207511B2 JP 5207511 B2 JP5207511 B2 JP 5207511B2 JP 2007136859 A JP2007136859 A JP 2007136859A JP 2007136859 A JP2007136859 A JP 2007136859A JP 5207511 B2 JP5207511 B2 JP 5207511B2
Authority
JP
Japan
Prior art keywords
active layer
light
concentration
emitting element
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007136859A
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English (en)
Japanese (ja)
Other versions
JP2008294144A5 (enExample
JP2008294144A (ja
Inventor
肇 柴田
衆志 反保
浩司 松原
昭政 山田
啓一郎 櫻井
尚吾 石塚
栄 仁木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
National Institute of Advanced Industrial Science and Technology AIST
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Institute of Advanced Industrial Science and Technology AIST filed Critical National Institute of Advanced Industrial Science and Technology AIST
Priority to JP2007136859A priority Critical patent/JP5207511B2/ja
Priority to US12/601,248 priority patent/US8304804B2/en
Priority to PCT/JP2008/058781 priority patent/WO2008143066A1/ja
Publication of JP2008294144A publication Critical patent/JP2008294144A/ja
Publication of JP2008294144A5 publication Critical patent/JP2008294144A5/ja
Application granted granted Critical
Publication of JP5207511B2 publication Critical patent/JP5207511B2/ja
Expired - Fee Related legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/823—Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO

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  • Led Devices (AREA)
JP2007136859A 2007-05-23 2007-05-23 半導体素子 Expired - Fee Related JP5207511B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2007136859A JP5207511B2 (ja) 2007-05-23 2007-05-23 半導体素子
US12/601,248 US8304804B2 (en) 2007-05-23 2008-05-13 Semiconductor device
PCT/JP2008/058781 WO2008143066A1 (ja) 2007-05-23 2008-05-13 半導体素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007136859A JP5207511B2 (ja) 2007-05-23 2007-05-23 半導体素子

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013006928A Division JP2013065914A (ja) 2013-01-18 2013-01-18 半導体素子

Publications (3)

Publication Number Publication Date
JP2008294144A JP2008294144A (ja) 2008-12-04
JP2008294144A5 JP2008294144A5 (enExample) 2010-01-21
JP5207511B2 true JP5207511B2 (ja) 2013-06-12

Family

ID=40031775

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007136859A Expired - Fee Related JP5207511B2 (ja) 2007-05-23 2007-05-23 半導体素子

Country Status (3)

Country Link
US (1) US8304804B2 (enExample)
JP (1) JP5207511B2 (enExample)
WO (1) WO2008143066A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101894893B (zh) * 2010-06-08 2014-05-14 浙江大学 基于双层MgZnO薄膜异质结的电致发光器件
US9082903B2 (en) 2010-09-22 2015-07-14 First Solar, Inc. Photovoltaic device with a zinc magnesium oxide window layer
WO2014002069A2 (en) 2012-06-29 2014-01-03 Koninklijke Philips N.V. Ii-vi based light emitting semiconductor device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3562518B2 (ja) * 1991-02-21 2004-09-08 ソニー株式会社 半導体発光装置
JP2004193270A (ja) * 2002-12-10 2004-07-08 Sharp Corp 酸化物半導体発光素子
JP2004296796A (ja) * 2003-03-27 2004-10-21 Shin Etsu Handotai Co Ltd 発光素子および発光素子の製造方法
JP2005243955A (ja) 2004-02-26 2005-09-08 Shin Etsu Handotai Co Ltd 発光素子およびその製造方法
JP2006086142A (ja) 2004-09-14 2006-03-30 Shin Etsu Handotai Co Ltd 化合物半導体素子の製造方法
EP1872415A4 (en) * 2005-03-30 2010-06-23 Moxtronics Inc Metal Oxide Semiconductor Films, Structures and Methods
DE112006002083T5 (de) * 2005-08-03 2008-06-12 Stanley Electric Co. Ltd. Halbleiter-Leuchtvorrichtung und ihr Herstellungsverfahren
JP2007059667A (ja) 2005-08-25 2007-03-08 Toshiba Lighting & Technology Corp 発光装置
JP2007273562A (ja) * 2006-03-30 2007-10-18 Toshiba Corp 半導体発光装置
JP2007123938A (ja) 2007-01-26 2007-05-17 Rohm Co Ltd 酸化亜鉛系化合物半導体素子

Also Published As

Publication number Publication date
WO2008143066A1 (ja) 2008-11-27
JP2008294144A (ja) 2008-12-04
US8304804B2 (en) 2012-11-06
US20100163864A1 (en) 2010-07-01

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