WO2008139689A1 - メモリコントローラ、半導体記録装置及び書き換え回数通知方法 - Google Patents

メモリコントローラ、半導体記録装置及び書き換え回数通知方法 Download PDF

Info

Publication number
WO2008139689A1
WO2008139689A1 PCT/JP2008/001025 JP2008001025W WO2008139689A1 WO 2008139689 A1 WO2008139689 A1 WO 2008139689A1 JP 2008001025 W JP2008001025 W JP 2008001025W WO 2008139689 A1 WO2008139689 A1 WO 2008139689A1
Authority
WO
WIPO (PCT)
Prior art keywords
region
information table
recorded
rewrites
reporting
Prior art date
Application number
PCT/JP2008/001025
Other languages
English (en)
French (fr)
Inventor
Takeshi Ootsuka
Original Assignee
Panasonic Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corporation filed Critical Panasonic Corporation
Priority to US12/598,957 priority Critical patent/US8397015B2/en
Priority to JP2009513989A priority patent/JP5180957B2/ja
Publication of WO2008139689A1 publication Critical patent/WO2008139689A1/ja

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/14—Handling requests for interconnection or transfer
    • G06F13/16—Handling requests for interconnection or transfer for access to memory bus
    • G06F13/1668—Details of memory controller
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles

Abstract

　ホスト機器から転送されるユーザデータと、論理アドレスと物理アドレスとの対応を示す第１の情報テーブル３５をフラッシュメモリ２０の第1領域に記録する。第１の情報テーブル３５が記録されている物理ブロックアドレスと製造時からの第１の情報テーブルを記録する物理ブロックの更新回数を要素とする第２の情報テーブル３８を、フラッシュメモリ２０の第２領域に記録する。第１，第２の領域の物理ブロックは独立に循環させて記録する。そして、第２の情報テーブルの記録から第１領域の総書き換え回数を換算する。これにより、第２領域の書き換え回数を抑制することができ、第２領域に記録された製造時からの第１の情報テーブルの更新回数の信頼性を向上することができる。
PCT/JP2008/001025 2007-05-10 2008-04-18 メモリコントローラ、半導体記録装置及び書き換え回数通知方法 WO2008139689A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/598,957 US8397015B2 (en) 2007-05-10 2008-04-18 Memory controller, semiconductor recording device, and method for notifying the number of times of rewriting
JP2009513989A JP5180957B2 (ja) 2007-05-10 2008-04-18 メモリコントローラ、半導体記録装置及び書き換え回数通知方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-125921 2007-05-10
JP2007125921 2007-05-10

Publications (1)

Publication Number Publication Date
WO2008139689A1 true WO2008139689A1 (ja) 2008-11-20

Family

ID=40001915

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/001025 WO2008139689A1 (ja) 2007-05-10 2008-04-18 メモリコントローラ、半導体記録装置及び書き換え回数通知方法

Country Status (3)

Country Link
US (1) US8397015B2 (ja)
JP (1) JP5180957B2 (ja)
WO (1) WO2008139689A1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010146150A (ja) * 2008-12-17 2010-07-01 Panasonic Corp 半導体記憶装置
JP2014029616A (ja) * 2012-07-31 2014-02-13 Mega Chips Corp 半導体記憶装置
JP2014035747A (ja) * 2012-08-10 2014-02-24 Mega Chips Corp 半導体記憶装置
JP2014092833A (ja) * 2012-11-01 2014-05-19 Toshiba Information Systems (Japan) Corp フラッシュメモリ制御装置、フラッシュメモリ制御方法及びフラッシュメモリ制御用プログラム
KR101786027B1 (ko) * 2009-04-07 2017-10-18 콘티넨탈 오토모티브 시스템 주식회사 자동차의 데이터 저장 방법

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018186453A1 (ja) * 2017-04-07 2018-10-11 パナソニックＩｐマネジメント株式会社 使用回数を増大させた不揮発性メモリ
US11218360B2 (en) 2019-12-09 2022-01-04 Quest Automated Services, LLC Automation system with edge computing

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003022682A (ja) * 2001-07-09 2003-01-24 Mitsubishi Electric Corp 半導体装置
JP2006323751A (ja) * 2005-05-20 2006-11-30 Nec Infrontia Corp 情報処理装置、寿命監視方法およびプログラム

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2749752B2 (ja) 1993-01-20 1998-05-13 キヤノン株式会社 メモリの書き込み制御装置
US5841669A (en) * 1996-01-26 1998-11-24 Howmet Research Corporation Solidification control including pattern recognition
US5740936A (en) * 1996-11-20 1998-04-21 Nash; William L. Electric outlet box assembly
JP4031190B2 (ja) * 2000-09-29 2008-01-09 株式会社東芝 メモリカード、不揮発性メモリ、不揮発性メモリのデータ書き込み方法及びデータ書き込み装置
JP2004310650A (ja) * 2003-04-10 2004-11-04 Renesas Technology Corp メモリ装置
JP3927192B2 (ja) 2004-03-29 2007-06-06 松下電器産業株式会社 メモリカード及びメモリカードドライブ
TW200705180A (en) * 2005-07-29 2007-02-01 Genesys Logic Inc Adjustable flash memory management system and method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003022682A (ja) * 2001-07-09 2003-01-24 Mitsubishi Electric Corp 半導体装置
JP2006323751A (ja) * 2005-05-20 2006-11-30 Nec Infrontia Corp 情報処理装置、寿命監視方法およびプログラム

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010146150A (ja) * 2008-12-17 2010-07-01 Panasonic Corp 半導体記憶装置
KR101786027B1 (ko) * 2009-04-07 2017-10-18 콘티넨탈 오토모티브 시스템 주식회사 자동차의 데이터 저장 방법
JP2014029616A (ja) * 2012-07-31 2014-02-13 Mega Chips Corp 半導体記憶装置
JP2014035747A (ja) * 2012-08-10 2014-02-24 Mega Chips Corp 半導体記憶装置
JP2014092833A (ja) * 2012-11-01 2014-05-19 Toshiba Information Systems (Japan) Corp フラッシュメモリ制御装置、フラッシュメモリ制御方法及びフラッシュメモリ制御用プログラム

Also Published As

Publication number Publication date
US20100138593A1 (en) 2010-06-03
US8397015B2 (en) 2013-03-12
JPWO2008139689A1 (ja) 2010-07-29
JP5180957B2 (ja) 2013-04-10

Similar Documents

Publication Publication Date Title
JP5073667B2 (ja) Ｓｌｃ及びｍｌｃフラッシュメモリを使用するポータブルデータ記憶装置
WO2008139689A1 (ja) メモリコントローラ、半導体記録装置及び書き換え回数通知方法
CN101727976B (zh) 一种多层闪存装置、固态硬盘和分割非易失性存储器系统
WO2007034481A3 (en) A nand flash memory controller exporting a nand interface
WO2007134319A3 (en) Multi-chip package for a flash memory
GB2406196B (en) Efficient read, write method for pipeline memory
WO2008048388A3 (en) Virtual memory card controller
TW201418989A (zh) 記憶體系統控制器
WO2009044904A3 (en) Semiconductor memory device
TW200712878A (en) Method and system for managing partitions in a storage device
WO2001029670A3 (en) A semiconductor memory card access apparatus, a computer-readable recording medium, an initialization method, and a semiconductor memory card
EP2077559A3 (en) Refresh method of a flash memory
HK1122620A1 (en) Flash memory management method and system, memory device and flash memory device
EP1785995A4 (en) DATA PROCESSING METHOD, INFORMATION RECORDING MEDIUM MANUFACTURING MANAGEMENT SYSTEM, RECORDING DATA GENERATING DEVICE AND METHOD, AND COMPUTER PROGRAM
JP2012113732A5 (ja)
WO2009063614A1 (ja) メモリコントローラ、不揮発性記憶モジュール、アクセスモジュール、及び不揮発性記憶システム
TW200643724A (en) System for improving bandwidth among a plurality of memory controllers and method thereof
WO2007023213A3 (fr) Procede de configuration d'un espace memoire divise en zones memoire
TW200715117A (en) Method for assigning virtual import/export element addresses
CN102750982A (zh) 一种加密存储芯片的烧录方法及系统
JP2009146062A5 (ja)
WO2007078552A3 (en) Computer architecture for providing physical separation of computing processes
DE602008003733D1 (de) Datenschreibverfahren
GB0608085D0 (en) Network interface and router
CN102543177B (zh) 一种固态盘静态磨损平衡算法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08751569

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2009513989

Country of ref document: JP

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 12598957

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08751569

Country of ref document: EP

Kind code of ref document: A1