WO2008137687A1 - Accroissement pour stockage non volatile utilisant une commutation d'isolation de canal - Google Patents

Accroissement pour stockage non volatile utilisant une commutation d'isolation de canal Download PDF

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Publication number
WO2008137687A1
WO2008137687A1 PCT/US2008/062432 US2008062432W WO2008137687A1 WO 2008137687 A1 WO2008137687 A1 WO 2008137687A1 US 2008062432 W US2008062432 W US 2008062432W WO 2008137687 A1 WO2008137687 A1 WO 2008137687A1
Authority
WO
WIPO (PCT)
Prior art keywords
word line
boosting
volatile storage
voltage
storage elements
Prior art date
Application number
PCT/US2008/062432
Other languages
English (en)
Inventor
Yingda Dong
Jeffrey W. Lutze
Shih-Chung Lee
Gerrit Jan Hemink
Ken Oowada
Original Assignee
Sandisk Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/745,082 external-priority patent/US7460404B1/en
Priority claimed from US11/745,092 external-priority patent/US7463522B2/en
Application filed by Sandisk Corporation filed Critical Sandisk Corporation
Priority to CN2008800152859A priority Critical patent/CN101715596B/zh
Priority to KR1020097025581A priority patent/KR101431195B1/ko
Publication of WO2008137687A1 publication Critical patent/WO2008137687A1/fr

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits

Abstract

Le dérangement d'un programme est réduit au cours d'un stockage non volatile en empêchant un accroissement automatique côté source dans des chaînes NAND sélectionnées. Un mode d'accroissement automatique qui comporte une ligne de mot d'isolation est utilisé. Une zone de canal d'une chaîne NAND inhibée est accrue sur un côté source de la ligne de mot d'isolation avant que le canal ne soit accru sur un côté drain de la ligne de mot d'isolation. En outre, les éléments de stockage proches de la ligne de mot d'isolation sont maintenus dans un état conducteur pendant l'accroissement côté source de sorte que le canal côté source est connecté au canal côté drain. De cette façon, dans des chaînes NAND sélectionnées, l'accroissement côté source peut ne pas se produire et ainsi les perturbations de programme dues à l'accroissement côté source peuvent être empêchées. Après l'accroissement côté source, le canal côté source est isolé du canal côté drain, et l'accroissement côté drain est exécuté.
PCT/US2008/062432 2007-05-07 2008-05-02 Accroissement pour stockage non volatile utilisant une commutation d'isolation de canal WO2008137687A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2008800152859A CN101715596B (zh) 2007-05-07 2008-05-02 使用沟道隔离切换的非易失性存储器的升压
KR1020097025581A KR101431195B1 (ko) 2007-05-07 2008-05-02 채널 절연 스위칭을 이용한 비휘발성 저장을 위한 부스팅

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US11/745,082 US7460404B1 (en) 2007-05-07 2007-05-07 Boosting for non-volatile storage using channel isolation switching
US11/745,092 US7463522B2 (en) 2007-05-07 2007-05-07 Non-volatile storage with boosting using channel isolation switching
US11/745,082 2007-05-07
US11/745,092 2007-05-07

Publications (1)

Publication Number Publication Date
WO2008137687A1 true WO2008137687A1 (fr) 2008-11-13

Family

ID=39943949

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2008/062432 WO2008137687A1 (fr) 2007-05-07 2008-05-02 Accroissement pour stockage non volatile utilisant une commutation d'isolation de canal

Country Status (4)

Country Link
KR (1) KR101431195B1 (fr)
CN (1) CN101715596B (fr)
TW (1) TWI386944B (fr)
WO (1) WO2008137687A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10026487B2 (en) * 2016-06-03 2018-07-17 Sandisk Technologies Llc Non-volatile memory with customized control of injection type of disturb during program verify for improved program performance
US10283202B1 (en) * 2017-11-16 2019-05-07 Sandisk Technologies Llc Reducing disturbs with delayed ramp up of selected word line voltage after pre-charge during programming
US10741262B2 (en) * 2018-10-12 2020-08-11 Macronix International Co., Ltd. NAND flash operating techniques mitigating program disturbance
KR20210119084A (ko) 2020-03-24 2021-10-05 에스케이하이닉스 주식회사 반도체 장치 및 반도체 장치의 동작 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6049494A (en) * 1997-02-03 2000-04-11 Kabushiki Kaisha Toshiba Semiconductor memory device
US20060250850A1 (en) * 2005-05-06 2006-11-09 Chang-Hyun Lee Flash Memory Device and Method of Programming the Same
US7161833B2 (en) * 2004-02-06 2007-01-09 Sandisk Corporation Self-boosting system for flash memory cells

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100297602B1 (ko) * 1997-12-31 2001-08-07 윤종용 비휘발성메모리장치의프로그램방법
JP3810985B2 (ja) * 2000-05-22 2006-08-16 株式会社東芝 不揮発性半導体メモリ
KR100502412B1 (ko) * 2002-10-23 2005-07-19 삼성전자주식회사 불 휘발성 반도체 메모리 장치 및 그것의 프로그램 방법
US6859397B2 (en) * 2003-03-05 2005-02-22 Sandisk Corporation Source side self boosting technique for non-volatile memory
TWI220526B (en) * 2003-03-26 2004-08-21 Macronix Int Co Ltd An operation method of nonvolatile memory array
KR100562506B1 (ko) * 2003-12-01 2006-03-21 삼성전자주식회사 플래시 메모리 장치 및 그것의 프로그램 방법
US7023739B2 (en) * 2003-12-05 2006-04-04 Matrix Semiconductor, Inc. NAND memory array incorporating multiple write pulse programming of individual memory cells and method for operation of same
US7023733B2 (en) 2004-05-05 2006-04-04 Sandisk Corporation Boosting to control programming of non-volatile memory
US7307884B2 (en) * 2004-06-15 2007-12-11 Sandisk Corporation Concurrent programming of non-volatile memory
DE602006018808D1 (de) * 2005-01-03 2011-01-27 Macronix Int Co Ltd Nichtflüchtige Speicherzellen, Speicherarrays damit und Verfahren zum Betrieb der Zellen und Arrays

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6049494A (en) * 1997-02-03 2000-04-11 Kabushiki Kaisha Toshiba Semiconductor memory device
US7161833B2 (en) * 2004-02-06 2007-01-09 Sandisk Corporation Self-boosting system for flash memory cells
US20060250850A1 (en) * 2005-05-06 2006-11-09 Chang-Hyun Lee Flash Memory Device and Method of Programming the Same

Also Published As

Publication number Publication date
TW200903499A (en) 2009-01-16
CN101715596B (zh) 2013-08-21
CN101715596A (zh) 2010-05-26
KR101431195B1 (ko) 2014-08-18
TWI386944B (zh) 2013-02-21
KR20100029194A (ko) 2010-03-16

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