WO2008122624A3 - Verfahren zur herstellung eines elektrischen trägerscheibenkontakts für einen vorderseitigen anschluss - Google Patents

Verfahren zur herstellung eines elektrischen trägerscheibenkontakts für einen vorderseitigen anschluss Download PDF

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Publication number
WO2008122624A3
WO2008122624A3 PCT/EP2008/054123 EP2008054123W WO2008122624A3 WO 2008122624 A3 WO2008122624 A3 WO 2008122624A3 EP 2008054123 W EP2008054123 W EP 2008054123W WO 2008122624 A3 WO2008122624 A3 WO 2008122624A3
Authority
WO
WIPO (PCT)
Prior art keywords
components
carrier wafer
layer
bonding
producing
Prior art date
Application number
PCT/EP2008/054123
Other languages
English (en)
French (fr)
Other versions
WO2008122624A2 (de
Inventor
Alexander Hoelke
Original Assignee
X Fab Semiconductor Foundries
Alexander Hoelke
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by X Fab Semiconductor Foundries, Alexander Hoelke filed Critical X Fab Semiconductor Foundries
Publication of WO2008122624A2 publication Critical patent/WO2008122624A2/de
Publication of WO2008122624A3 publication Critical patent/WO2008122624A3/de

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/03—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01028—Nickel [Ni]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
  • Element Separation (AREA)

Abstract

Vorgeschlagen wird ein Verfahren zur Herstellung eines elektrischen Trägerscheibenkontaktes mit vorderseitigem Anschluss für CMOS-Bauelemente der SOI-Technologie unter Einsatz dicker Schichten (2) in der Größenordnung von einigen μm auf der Silizium-Trägerscheibe (4). Am Ende des CMOS-Prozesses wird die Trägerscheibe durch Ätzung einer Einsenkung (6a) in der Größe einer Bondinsel freigelegt, welche Ätzung durch den gesamten Stapel aus Zwischenisolatorschichten, aktiver Siliziumschicht (2) und vergrabenem Oxid (3) reicht. In diesem Gebiet wird die Bondinsel mittels einer Metallisierungsebene mit nachfolgender Strukturierung ausgebildet. Von dieser Ebene wird später im Montageprozess durch Drahtbonden (7) eine elektrische Verbindung zu anderen Bondinseln des Bauelementes hergestellt. Durch das Verfahren gelingt es Kosten einzusparen und die Ausbeute zu steigern. Die entstehenden Bauelemente besitzen eine erhöhte Zuverlässigkeit und können für differenziertere Anwendungen gestaltet werden, z.B. auf unterschiedliche elektrische Potenziale von Substratkontakten für SOI-Bauelemente ausgelegt werden.
PCT/EP2008/054123 2007-04-04 2008-04-04 Verfahren zur herstellung eines elektrischen trägerscheibenkontakts für einen vorderseitigen anschluss WO2008122624A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007016257.1 2007-04-04
DE200710016257 DE102007016257A1 (de) 2007-04-04 2007-04-04 Verfahren zur Herstellung eines elektrischen Trägerscheibenkontaktes mit vorderseitigem Anschluss

Publications (2)

Publication Number Publication Date
WO2008122624A2 WO2008122624A2 (de) 2008-10-16
WO2008122624A3 true WO2008122624A3 (de) 2009-01-08

Family

ID=39736160

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2008/054123 WO2008122624A2 (de) 2007-04-04 2008-04-04 Verfahren zur herstellung eines elektrischen trägerscheibenkontakts für einen vorderseitigen anschluss

Country Status (2)

Country Link
DE (1) DE102007016257A1 (de)
WO (1) WO2008122624A2 (de)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4076955A (en) * 1975-03-03 1978-02-28 Hughes Aircraft Company Package for hermetically sealing electronic circuits
DE19845294A1 (de) * 1998-03-13 1999-09-23 Mitsubishi Electric Corp Halbleitervorrichtung und Herstellungsverfahren einer Halbleitervorrichtung

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5314841A (en) 1993-04-30 1994-05-24 International Business Machines Corporation Method of forming a frontside contact to the silicon substrate of a SOI wafer
US5479048A (en) 1994-02-04 1995-12-26 Analog Devices, Inc. Integrated circuit chip supported by a handle wafer and provided with means to maintain the handle wafer potential at a desired level
US6355511B1 (en) 2000-06-16 2002-03-12 Advanced Micro Devices, Inc. Method of providing a frontside contact to substrate of SOI device
US7485926B2 (en) 2003-01-30 2009-02-03 X-Fab Semiconductor Foundries Ag SOI contact structures

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4076955A (en) * 1975-03-03 1978-02-28 Hughes Aircraft Company Package for hermetically sealing electronic circuits
DE19845294A1 (de) * 1998-03-13 1999-09-23 Mitsubishi Electric Corp Halbleitervorrichtung und Herstellungsverfahren einer Halbleitervorrichtung

Also Published As

Publication number Publication date
WO2008122624A2 (de) 2008-10-16
DE102007016257A1 (de) 2008-10-09

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