WO2008117867A1 - Composition de couche mince inférieure de résist et procédé pour former une structure à double damasquinage - Google Patents
Composition de couche mince inférieure de résist et procédé pour former une structure à double damasquinage Download PDFInfo
- Publication number
- WO2008117867A1 WO2008117867A1 PCT/JP2008/056131 JP2008056131W WO2008117867A1 WO 2008117867 A1 WO2008117867 A1 WO 2008117867A1 JP 2008056131 W JP2008056131 W JP 2008056131W WO 2008117867 A1 WO2008117867 A1 WO 2008117867A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- lower layer
- layer film
- resist lower
- film composition
- dual damascene
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
Abstract
L'invention concerne une composition de couche mince inférieure de résist, qui a une teneur en atome d'azote de 10 % en masse ou plus dans une couche mince inférieure de résist lorsque la couche mince inférieure de résist d'épaisseur de 300 nm est formée par l'application d'un résist sur un matériau de base et séchage du résist par la chaleur à 250°C pendant 60 secondes.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009506383A JP5177132B2 (ja) | 2007-03-28 | 2008-03-28 | レジスト下層膜用組成物及びデュアルダマシン構造の形成方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007086001 | 2007-03-28 | ||
JP2007-086001 | 2007-03-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008117867A1 true WO2008117867A1 (fr) | 2008-10-02 |
Family
ID=39788598
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/056131 WO2008117867A1 (fr) | 2007-03-28 | 2008-03-28 | Composition de couche mince inférieure de résist et procédé pour former une structure à double damasquinage |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP5177132B2 (fr) |
TW (1) | TWI442186B (fr) |
WO (1) | WO2008117867A1 (fr) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010217306A (ja) * | 2009-03-13 | 2010-09-30 | Jsr Corp | パターン形成方法及び平坦化膜形成用組成物 |
JP2010247335A (ja) * | 2009-04-10 | 2010-11-04 | Fujifilm Corp | ガスバリアフィルムおよびガスバリアフィルムの製造方法 |
WO2015098525A1 (fr) * | 2013-12-27 | 2015-07-02 | 日産化学工業株式会社 | Composition de formation de film de sous-couche de réserve contenant un copolymère qui possède un noyau triazine et un atome de soufre dans la chaîne principale |
JPWO2019009143A1 (ja) * | 2017-07-04 | 2020-04-16 | 富士フイルム株式会社 | 赤外線受光素子の製造方法、光センサの製造方法、積層体、レジスト組成物およびキット |
JPWO2020162183A1 (ja) * | 2019-02-07 | 2021-10-21 | 三井化学株式会社 | 下層膜形成用材料、レジスト下層膜および積層体 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI690270B (zh) | 2013-12-18 | 2020-04-11 | 日商不二製油股份有限公司 | 類啤酒發泡性飲料之製造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0950130A (ja) * | 1995-08-04 | 1997-02-18 | Sumitomo Chem Co Ltd | 感光性樹脂用反射防止下地材料組成物 |
JPH10228113A (ja) * | 1996-12-13 | 1998-08-25 | Tokyo Ohka Kogyo Co Ltd | リソグラフィー用下地材 |
JP2002148791A (ja) * | 2000-11-09 | 2002-05-22 | Tokyo Ohka Kogyo Co Ltd | 反射防止膜形成用組成物 |
JP2004014841A (ja) * | 2002-06-07 | 2004-01-15 | Fujitsu Ltd | 半導体装置及びその製造方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5047504B2 (ja) * | 2005-02-05 | 2012-10-10 | 三星電子株式会社 | ビアキャッピング保護膜を使用する半導体素子のデュアルダマシン配線の製造方法 |
-
2008
- 2008-03-27 TW TW97111054A patent/TWI442186B/zh active
- 2008-03-28 WO PCT/JP2008/056131 patent/WO2008117867A1/fr active Application Filing
- 2008-03-28 JP JP2009506383A patent/JP5177132B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0950130A (ja) * | 1995-08-04 | 1997-02-18 | Sumitomo Chem Co Ltd | 感光性樹脂用反射防止下地材料組成物 |
JPH10228113A (ja) * | 1996-12-13 | 1998-08-25 | Tokyo Ohka Kogyo Co Ltd | リソグラフィー用下地材 |
JP2002148791A (ja) * | 2000-11-09 | 2002-05-22 | Tokyo Ohka Kogyo Co Ltd | 反射防止膜形成用組成物 |
JP2004014841A (ja) * | 2002-06-07 | 2004-01-15 | Fujitsu Ltd | 半導体装置及びその製造方法 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010217306A (ja) * | 2009-03-13 | 2010-09-30 | Jsr Corp | パターン形成方法及び平坦化膜形成用組成物 |
JP2010247335A (ja) * | 2009-04-10 | 2010-11-04 | Fujifilm Corp | ガスバリアフィルムおよびガスバリアフィルムの製造方法 |
WO2015098525A1 (fr) * | 2013-12-27 | 2015-07-02 | 日産化学工業株式会社 | Composition de formation de film de sous-couche de réserve contenant un copolymère qui possède un noyau triazine et un atome de soufre dans la chaîne principale |
JPWO2015098525A1 (ja) * | 2013-12-27 | 2017-03-23 | 日産化学工業株式会社 | トリアジン環及び硫黄原子を主鎖に有する共重合体を含むレジスト下層膜形成組成物 |
US9678427B2 (en) | 2013-12-27 | 2017-06-13 | Nissan Chemical Industries, Ltd. | Resist underlayer film-forming composition containing copolymer that has triazine ring and sulfur atom in main chain |
TWI648599B (zh) * | 2013-12-27 | 2019-01-21 | 日商日產化學工業股份有限公司 | 含有在主鏈具三嗪環及硫原子之共聚物的阻劑下層膜形成組成物 |
JPWO2019009143A1 (ja) * | 2017-07-04 | 2020-04-16 | 富士フイルム株式会社 | 赤外線受光素子の製造方法、光センサの製造方法、積層体、レジスト組成物およびキット |
JPWO2020162183A1 (ja) * | 2019-02-07 | 2021-10-21 | 三井化学株式会社 | 下層膜形成用材料、レジスト下層膜および積層体 |
Also Published As
Publication number | Publication date |
---|---|
JPWO2008117867A1 (ja) | 2010-07-15 |
JP5177132B2 (ja) | 2013-04-03 |
TW200848937A (en) | 2008-12-16 |
TWI442186B (zh) | 2014-06-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2008117867A1 (fr) | Composition de couche mince inférieure de résist et procédé pour former une structure à double damasquinage | |
EP1705206A4 (fr) | Procede pour produire un polymere, polymere, composition pour former un film isolant, procede pour produire un film isolant, et film isolant | |
TWI346253B (en) | Antireflection film composition, patterning process and substrate using the same | |
TWI367221B (en) | Hardmask composition having antireflective properties, process for forming patterned material layer by using the composition and semiconductor integrated circuit device produced using the process | |
EP1719793A4 (fr) | Polymere et procede de fabrication, composition pour la formation d' une couche mince isolante et procede de formation de cette derniere. | |
TWI366068B (en) | Hardmask composition for processing resist underlayer film, process for producing semiconductor integrated circuit device using the hardmask composition, and semiconductor integrated circuit device produced by the process | |
WO2008069930A3 (fr) | Substrats flexibles comportant une mince pellicule de blocage | |
EP2298714A4 (fr) | Composition destinée à la formation d'un film ferroélectrique mince, procédé de formation d'un film ferroélectrique mince et film ferrolélectrique mince formé selon ce procédé | |
EP2196852A4 (fr) | Composition de résine photosensible de type positif, et procédé de formation d'un film durci l'utilisant | |
TWI372767B (en) | Polymer having antireflective properties, hardmask composition including the same, and process for forming a patterned material layer | |
EP1743915A4 (fr) | Film oriente, methode de fabrication dudit film et produit stratifie de celui-ci | |
EP1855159A4 (fr) | Composition d une sous-couche de reserve et procede de production de celle-ci | |
WO2009058180A3 (fr) | Technique d'autoassemblage applicable à de larges zones et à la nanofabrication | |
WO2007075965A3 (fr) | Transistors en couches minces hybrides inorganiques-organiques utilisant des films semi-conducteurs inorganiques | |
WO2006072022A3 (fr) | Dispositif electronique comprenant un materiau hote dans une couche et procede de formation dudit dispositif | |
MY146818A (en) | Thermally activatable insulating packaging | |
EP2236543A4 (fr) | Composition durcissable développable par un alcali, film mince isolant utilisant celle-ci et transistor à film mince | |
EP2058366A4 (fr) | Formule de résine pour moulage, matériau isolant l'utilisant et structure isolante | |
PL2038355T3 (pl) | Przeciwodblaskowa kompozycja powlekająca z odpornością na zabrudzenia, przeciwodblaskowa powłoka powlekająca wykorzystująca ją i sposób jej wytwarzania | |
TWI370952B (en) | Positive resist composition for thick-film resist film forming, thick-film resist laminated product, and method for forming resist pattern | |
UY29722A1 (es) | Revestimientos de envases, métodos para revestir envase y envases revestidos por los mismos | |
EP1829945A4 (fr) | Film, film de silice, procede et composition pour le former et composant electronique | |
TWI370160B (en) | Conductive polymer coating composition, method of preparing coating film using the conductive polymer coating composition, and coating film prepared using the method | |
EP2161309A4 (fr) | Composition de revêtement pour film mince métallique et film de revêtement composite brillant obtenu à partir de la composition de revêtement | |
GB0806614D0 (en) | Composite structures for improved thermal stability/durability |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 08739249 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2009506383 Country of ref document: JP |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 08739249 Country of ref document: EP Kind code of ref document: A1 |