WO2008117579A1 - 薄膜積層体及びそれを用いた有機トランジスタ - Google Patents

薄膜積層体及びそれを用いた有機トランジスタ Download PDF

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Publication number
WO2008117579A1
WO2008117579A1 PCT/JP2008/052394 JP2008052394W WO2008117579A1 WO 2008117579 A1 WO2008117579 A1 WO 2008117579A1 JP 2008052394 W JP2008052394 W JP 2008052394W WO 2008117579 A1 WO2008117579 A1 WO 2008117579A1
Authority
WO
WIPO (PCT)
Prior art keywords
thin
film laminate
organic
film
thin films
Prior art date
Application number
PCT/JP2008/052394
Other languages
English (en)
French (fr)
Inventor
Hiroyuki Okada
Shigeki Naka
Original Assignee
National University Corporation University Of Toyama
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National University Corporation University Of Toyama filed Critical National University Corporation University Of Toyama
Priority to EP08711236.3A priority Critical patent/EP2130670A4/en
Priority to JP2009506238A priority patent/JP5305461B2/ja
Publication of WO2008117579A1 publication Critical patent/WO2008117579A1/ja
Priority to US12/565,010 priority patent/US8178868B2/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
    • H10K10/476—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure comprising at least one organic layer and at least one inorganic layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/623—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing five rings, e.g. pentacene

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Laminated Bodies (AREA)

Abstract

【課題】分子層厚さレベルで制御された第１の有機層と、第１の有機層とは異なる第２の有機層又は無機系の極薄絶縁層との積層構造を形成することで、従来の半導体層成膜では樹枝状構造等になってしまい均一性が確保できない膜構造を、平坦膜とすることが可能となる薄膜積層体の提供を目的とする。 【解決手段】第１の有機薄膜と、第２の有機薄膜又は無機系の絶縁性薄膜とを交互に複層積層してあることを特徴とする。
PCT/JP2008/052394 2007-03-26 2008-02-14 薄膜積層体及びそれを用いた有機トランジスタ WO2008117579A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP08711236.3A EP2130670A4 (en) 2007-03-26 2008-02-14 LAMINATED THIN FILM AND ORGANIC TRANSISTOR USING THE SAME
JP2009506238A JP5305461B2 (ja) 2007-03-26 2008-02-14 薄膜積層体及びそれを用いた有機トランジスタ
US12/565,010 US8178868B2 (en) 2007-03-26 2009-09-23 Thin-film laminate and organic transistor using the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-080314 2007-03-26
JP2007080314 2007-03-26

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/565,010 Continuation US8178868B2 (en) 2007-03-26 2009-09-23 Thin-film laminate and organic transistor using the same

Publications (1)

Publication Number Publication Date
WO2008117579A1 true WO2008117579A1 (ja) 2008-10-02

Family

ID=39788318

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/052394 WO2008117579A1 (ja) 2007-03-26 2008-02-14 薄膜積層体及びそれを用いた有機トランジスタ

Country Status (5)

Country Link
US (1) US8178868B2 (ja)
EP (1) EP2130670A4 (ja)
JP (1) JP5305461B2 (ja)
KR (1) KR20090128476A (ja)
WO (1) WO2008117579A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012129509A (ja) * 2010-11-24 2012-07-05 Semiconductor Energy Lab Co Ltd 発光素子、発光装置、照明装置、及び電子機器
WO2014136898A1 (ja) * 2013-03-07 2014-09-12 Dic株式会社 有機薄膜、これを用いた有機半導体デバイスおよび有機トランジスタ
JP2017143097A (ja) * 2016-02-08 2017-08-17 株式会社デンソー 有機電界効果トランジスタ

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06218870A (ja) * 1992-06-16 1994-08-09 Kanegafuchi Chem Ind Co Ltd 多層膜厚さ基準物
JP2000150168A (ja) 1998-11-13 2000-05-30 Toppan Printing Co Ltd 耐熱性低抵抗正孔輸送材料および有機薄膜発光素子
JP2004006476A (ja) * 2002-05-31 2004-01-08 Ricoh Co Ltd 縦型有機トランジスタ
JP2005085945A (ja) * 2003-09-08 2005-03-31 Canon Inc 電界効果型有機トランジスタおよびその製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07119083B2 (ja) * 1989-04-21 1995-12-20 工業技術院長 複合薄膜及びその製造方法
JP2813428B2 (ja) * 1989-08-17 1998-10-22 三菱電機株式会社 電界効果トランジスタ及び該電界効果トランジスタを用いた液晶表示装置
US7002176B2 (en) * 2002-05-31 2006-02-21 Ricoh Company, Ltd. Vertical organic transistor
US7521710B2 (en) * 2006-02-16 2009-04-21 Idemitsu Kosan Co., Ltd. Organic thin film transistor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06218870A (ja) * 1992-06-16 1994-08-09 Kanegafuchi Chem Ind Co Ltd 多層膜厚さ基準物
JP2000150168A (ja) 1998-11-13 2000-05-30 Toppan Printing Co Ltd 耐熱性低抵抗正孔輸送材料および有機薄膜発光素子
JP2004006476A (ja) * 2002-05-31 2004-01-08 Ricoh Co Ltd 縦型有機トランジスタ
JP2005085945A (ja) * 2003-09-08 2005-03-31 Canon Inc 電界効果型有機トランジスタおよびその製造方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
See also references of EP2130670A4
Y.-Y. LIN ET AL., IEEE TRANS. ELECTRON DEVICES, vol. 44, no. 8, 1997, pages 1325

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012129509A (ja) * 2010-11-24 2012-07-05 Semiconductor Energy Lab Co Ltd 発光素子、発光装置、照明装置、及び電子機器
US9859516B2 (en) 2010-11-24 2018-01-02 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, lighting device, and electronic devices
WO2014136898A1 (ja) * 2013-03-07 2014-09-12 Dic株式会社 有機薄膜、これを用いた有機半導体デバイスおよび有機トランジスタ
JP5732595B2 (ja) * 2013-03-07 2015-06-10 Dic株式会社 有機薄膜、これを用いた有機半導体デバイスおよび有機トランジスタ
US10158087B2 (en) 2013-03-07 2018-12-18 DIC Corporation (Tokyo) Organic thin film, and organic semiconductor device and organic transistor using same
JP2017143097A (ja) * 2016-02-08 2017-08-17 株式会社デンソー 有機電界効果トランジスタ

Also Published As

Publication number Publication date
KR20090128476A (ko) 2009-12-15
EP2130670A4 (en) 2014-08-27
US8178868B2 (en) 2012-05-15
JPWO2008117579A1 (ja) 2010-07-15
US20100025672A1 (en) 2010-02-04
JP5305461B2 (ja) 2013-10-02
EP2130670A1 (en) 2009-12-09

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