WO2008111134A1 - 表面疎水化膜、表面疎水化膜形成材料、配線層、半導体装置および半導体装置の製造方法 - Google Patents

表面疎水化膜、表面疎水化膜形成材料、配線層、半導体装置および半導体装置の製造方法 Download PDF

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Publication number
WO2008111134A1
WO2008111134A1 PCT/JP2007/000228 JP2007000228W WO2008111134A1 WO 2008111134 A1 WO2008111134 A1 WO 2008111134A1 JP 2007000228 W JP2007000228 W JP 2007000228W WO 2008111134 A1 WO2008111134 A1 WO 2008111134A1
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Prior art keywords
semiconductor device
film
hydrophobicized film
hydrophobicized
wiring layer
Prior art date
Application number
PCT/JP2007/000228
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English (en)
French (fr)
Inventor
Tadahiro Imada
Yoshihiro Nakata
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Fujitsu Limited
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Publication date
Application filed by Fujitsu Limited filed Critical Fujitsu Limited
Priority to JP2009503777A priority Critical patent/JP5131267B2/ja
Priority to PCT/JP2007/000228 priority patent/WO2008111134A1/ja
Priority to KR1020097019185A priority patent/KR101132095B1/ko
Priority to CN2007800521789A priority patent/CN101647106B/zh
Priority to EP07736885.0A priority patent/EP2124249B1/en
Publication of WO2008111134A1 publication Critical patent/WO2008111134A1/ja
Priority to US12/545,596 priority patent/US8089138B2/en

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    • C01B33/00—Silicon; Compounds thereof
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    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
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  • Formation Of Insulating Films (AREA)

Abstract

リーク電流量が少なく、ＥＭ（エレクトロマイグレーション）耐性、ＴＤＤＢ（時間依存性絶縁破壊）耐性の高い配線層を得ることができ、これにより、消費電力が小さく、信頼性の高い半導体装置を製造することができる技術を提供する。本発明に係る表面疎水化膜は、絶縁膜と接触した表面疎水化膜であって、接触時の絶縁膜よりも疎水性が大きく、その反対側の面で配線とも接触し、硫黄原子、リン原子および窒素原子からなる群から選ばれた少なくとも一つの原子を含む。
PCT/JP2007/000228 2007-03-15 2007-03-15 表面疎水化膜、表面疎水化膜形成材料、配線層、半導体装置および半導体装置の製造方法 WO2008111134A1 (ja)

Priority Applications (6)

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JP2009503777A JP5131267B2 (ja) 2007-03-15 2007-03-15 表面疎水化膜形成材料、多層配線構造、半導体装置および半導体装置の製造方法
PCT/JP2007/000228 WO2008111134A1 (ja) 2007-03-15 2007-03-15 表面疎水化膜、表面疎水化膜形成材料、配線層、半導体装置および半導体装置の製造方法
KR1020097019185A KR101132095B1 (ko) 2007-03-15 2007-03-15 표면 소수화막, 표면 소수화막 형성 재료, 배선층, 반도체 장치 및 반도체 장치의 제조방법
CN2007800521789A CN101647106B (zh) 2007-03-15 2007-03-15 表面疏水化膜、表面疏水化膜形成材料、布线层、半导体装置及其制造方法
EP07736885.0A EP2124249B1 (en) 2007-03-15 2007-03-15 Surface-hydrophobicized film, material for formation of surface-hydrophobicized film, wiring layer, semiconductor device and process for producing semiconductor device
US12/545,596 US8089138B2 (en) 2007-03-15 2009-08-21 Surface-hydrophobicized film, material for formation of surface-hydrophobicized film, wiring layer, semiconductor device and process for producing semiconductor device

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PCT/JP2007/000228 WO2008111134A1 (ja) 2007-03-15 2007-03-15 表面疎水化膜、表面疎水化膜形成材料、配線層、半導体装置および半導体装置の製造方法

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US12/545,596 Continuation US8089138B2 (en) 2007-03-15 2009-08-21 Surface-hydrophobicized film, material for formation of surface-hydrophobicized film, wiring layer, semiconductor device and process for producing semiconductor device

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CN105336662B (zh) * 2014-05-29 2018-06-01 中芯国际集成电路制造(上海)有限公司 半导体结构的形成方法
KR102352232B1 (ko) * 2015-06-15 2022-01-17 삼성전자주식회사 콘택 구조체들을 갖는 반도체 소자의 제조 방법
CN107966865A (zh) * 2017-12-18 2018-04-27 深圳市华星光电半导体显示技术有限公司 阵列基板的制作方法、阵列基板及显示面板
TW202113488A (zh) * 2019-08-21 2021-04-01 美商布魯爾科技公司 用於euv微影之底層

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CN101647106B (zh) 2011-10-05
US20090309196A1 (en) 2009-12-17
KR20100005022A (ko) 2010-01-13
EP2124249B1 (en) 2015-03-04
KR101132095B1 (ko) 2012-04-04
US8089138B2 (en) 2012-01-03
EP2124249A4 (en) 2010-12-29
JP5131267B2 (ja) 2013-01-30
EP2124249A1 (en) 2009-11-25
JPWO2008111134A1 (ja) 2010-06-24

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