WO2008107963A1 - 光半導体素子 - Google Patents

光半導体素子 Download PDF

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Publication number
WO2008107963A1
WO2008107963A1 PCT/JP2007/054207 JP2007054207W WO2008107963A1 WO 2008107963 A1 WO2008107963 A1 WO 2008107963A1 JP 2007054207 W JP2007054207 W JP 2007054207W WO 2008107963 A1 WO2008107963 A1 WO 2008107963A1
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WO
WIPO (PCT)
Prior art keywords
photocoupler
semiconductor element
optical semiconductor
semiconductor laser
waveguides
Prior art date
Application number
PCT/JP2007/054207
Other languages
English (en)
French (fr)
Inventor
Akinori Hayakawa
Original Assignee
Fujitsu Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Limited filed Critical Fujitsu Limited
Priority to PCT/JP2007/054207 priority Critical patent/WO2008107963A1/ja
Priority to JP2009502380A priority patent/JP4983910B2/ja
Publication of WO2008107963A1 publication Critical patent/WO2008107963A1/ja
Priority to US12/554,568 priority patent/US7983318B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4207—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms with optical elements reducing the sensitivity to optical feedback
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
    • G02B6/2804—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals forming multipart couplers without wavelength selective elements, e.g. "T" couplers, star couplers
    • G02B6/2808—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals forming multipart couplers without wavelength selective elements, e.g. "T" couplers, star couplers using a mixing element which evenly distributes an input signal over a number of outputs
    • G02B6/2813—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals forming multipart couplers without wavelength selective elements, e.g. "T" couplers, star couplers using a mixing element which evenly distributes an input signal over a number of outputs based on multimode interference effect, i.e. self-imaging
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
    • G02B6/293—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
    • G02B6/29304—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means operating by diffraction, e.g. grating
    • G02B6/29316—Light guides comprising a diffractive element, e.g. grating in or on the light guide such that diffracted light is confined in the light guide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06258—Controlling the frequency of the radiation with DFB-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0656—Seeding, i.e. an additional light input is provided for controlling the laser modes, for example by back-reflecting light from an external optical component
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/0687—Stabilising the frequency of the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/101—Curved waveguide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1021—Coupled cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1039—Details on the cavity length
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers

Abstract

　光半導体素子を、同一基板上に、半導体レーザ（１１）と、第１光導波路（１２Ａ）と、半導体レーザから第１光導波路を介して導かれた光を２つに分岐する光結合器（１３）と、２つの第２光導波路（１２Ｂ，１２Ｃ）と、２つの第２光導波路のそれぞれに設けられた回折格子（１４，１５）と、２つの回折格子の一方を介して導かれた光を検出する光検出器（１６）とを備えるものとし、各回折格子側から半導体レーザ側への反射戻り光が光結合器で干渉するように、各回折格子側からの反射戻り光の位相が光結合器部分でπずれるように構成する。
PCT/JP2007/054207 2007-03-05 2007-03-05 光半導体素子 WO2008107963A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
PCT/JP2007/054207 WO2008107963A1 (ja) 2007-03-05 2007-03-05 光半導体素子
JP2009502380A JP4983910B2 (ja) 2007-03-05 2007-03-05 光半導体素子
US12/554,568 US7983318B2 (en) 2007-03-05 2009-09-04 Optical semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/054207 WO2008107963A1 (ja) 2007-03-05 2007-03-05 光半導体素子

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/554,568 Continuation US7983318B2 (en) 2007-03-05 2009-09-04 Optical semiconductor device

Publications (1)

Publication Number Publication Date
WO2008107963A1 true WO2008107963A1 (ja) 2008-09-12

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Application Number Title Priority Date Filing Date
PCT/JP2007/054207 WO2008107963A1 (ja) 2007-03-05 2007-03-05 光半導体素子

Country Status (3)

Country Link
US (1) US7983318B2 (ja)
JP (1) JP4983910B2 (ja)
WO (1) WO2008107963A1 (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010041454A1 (ja) * 2008-10-10 2010-04-15 日本電気株式会社 光ジョイント
JP2014006439A (ja) * 2012-06-26 2014-01-16 Nippon Telegr & Teleph Corp <Ntt> 半導体波長可変フィルタ及び半導体波長可変レーザ
JP2014075387A (ja) * 2012-10-02 2014-04-24 Mitsubishi Electric Corp 光集積素子
JP2014154835A (ja) * 2013-02-13 2014-08-25 Nippon Telegr & Teleph Corp <Ntt> 光送信器
WO2014156885A1 (ja) 2013-03-25 2014-10-02 技術研究組合光電子融合基盤技術研究所 光回路
JP2016152253A (ja) * 2015-02-16 2016-08-22 日本電信電話株式会社 半導体レーザ素子
JP6892040B1 (ja) * 2020-11-24 2021-06-18 三菱電機株式会社 光半導体装置

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WO2008117527A1 (ja) * 2007-03-23 2008-10-02 Kyushu University, National University Corporation 高輝度発光ダイオード
JP5493157B2 (ja) * 2009-10-09 2014-05-14 ディーエスエム アイピー アセッツ ビー．ブイ． Ｄ１４５１光ファイバ用の放射線硬化性スーパーコーティングを配合するための方法
KR101295896B1 (ko) * 2009-12-17 2013-08-12 한국전자통신연구원 레이저 소자
KR101783621B1 (ko) 2011-09-09 2017-10-11 삼성전자주식회사 광 연결 장치, 이의 제조 방법, 및 상기 광 연결 장치를 포함하는 메모리 시스템
US9739940B2 (en) 2015-03-12 2017-08-22 Medlumics S.L. Bidirectional photonic integrated circuit with suppressed reflection
US10514584B2 (en) 2017-08-10 2019-12-24 Sicoya Gmbh Optical signal generator comprising a phase shifter
WO2023041171A1 (en) * 2021-09-17 2023-03-23 Huawei Technologies Co., Ltd. Distributed feedback laser with integrated mpd

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JPS63160391A (ja) * 1986-12-24 1988-07-04 Toshiba Corp 分布帰還型半導体レ−ザ装置
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JPS63160391A (ja) * 1986-12-24 1988-07-04 Toshiba Corp 分布帰還型半導体レ−ザ装置
JPH04186690A (ja) * 1990-11-16 1992-07-03 Canon Inc 光集積型波長可変半導体レーザ装置
JP2006080412A (ja) * 2004-09-13 2006-03-23 Sony Corp レーザシステム

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010041454A1 (ja) * 2008-10-10 2010-04-15 日本電気株式会社 光ジョイント
US8433164B2 (en) 2008-10-10 2013-04-30 Nec Corporation Optical joint
JP5440506B2 (ja) * 2008-10-10 2014-03-12 日本電気株式会社 光ジョイント
JP2014006439A (ja) * 2012-06-26 2014-01-16 Nippon Telegr & Teleph Corp <Ntt> 半導体波長可変フィルタ及び半導体波長可変レーザ
JP2014075387A (ja) * 2012-10-02 2014-04-24 Mitsubishi Electric Corp 光集積素子
JP2014154835A (ja) * 2013-02-13 2014-08-25 Nippon Telegr & Teleph Corp <Ntt> 光送信器
WO2014156885A1 (ja) 2013-03-25 2014-10-02 技術研究組合光電子融合基盤技術研究所 光回路
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JPWO2014156885A1 (ja) * 2013-03-25 2017-02-16 技術研究組合光電子融合基盤技術研究所 光回路
JP2016152253A (ja) * 2015-02-16 2016-08-22 日本電信電話株式会社 半導体レーザ素子
JP6892040B1 (ja) * 2020-11-24 2021-06-18 三菱電機株式会社 光半導体装置
WO2022113165A1 (ja) * 2020-11-24 2022-06-02 三菱電機株式会社 光半導体装置

Also Published As

Publication number Publication date
US20100020840A1 (en) 2010-01-28
JP4983910B2 (ja) 2012-07-25
US7983318B2 (en) 2011-07-19
JPWO2008107963A1 (ja) 2010-06-03

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