WO2008099535A1 - アクティブマトリクス基板、アクティブマトリクス基板の製造方法、液晶表示装置および電子機器 - Google Patents

アクティブマトリクス基板、アクティブマトリクス基板の製造方法、液晶表示装置および電子機器 Download PDF

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Publication number
WO2008099535A1
WO2008099535A1 PCT/JP2007/070415 JP2007070415W WO2008099535A1 WO 2008099535 A1 WO2008099535 A1 WO 2008099535A1 JP 2007070415 W JP2007070415 W JP 2007070415W WO 2008099535 A1 WO2008099535 A1 WO 2008099535A1
Authority
WO
WIPO (PCT)
Prior art keywords
active matrix
matrix substrate
electrode layer
liquid crystal
display device
Prior art date
Application number
PCT/JP2007/070415
Other languages
English (en)
French (fr)
Inventor
Tetsuo Fujita
Yukinobu Nakata
Original Assignee
Sharp Kabushiki Kaisha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kabushiki Kaisha filed Critical Sharp Kabushiki Kaisha
Priority to CN2007800376198A priority Critical patent/CN101523282B/zh
Priority to US12/445,326 priority patent/US8237896B2/en
Publication of WO2008099535A1 publication Critical patent/WO2008099535A1/ja

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133553—Reflecting elements
    • G02F1/133555—Transflectors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/13629—Multilayer wirings
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)

Abstract

　本発明のアクティブマトリクス基板（３０）は、絶縁基板（１０）上に設けられた複数のＴＦＴ素子（２）と、上記各ＴＦＴ素子（２）と電気的に接続された画素電極（７）とを有する。上記画素電極（７）は、第１の透明電極層（７ａ）と、上記第１の透明電極層（７ａ）上に積層され、該第１の透明電極層（７ａ）よりも小さい面積の反射電極層（７ｂ）と、上記反射電極層（７ｂ）を少なくとも覆うように積層された第２の透明電極層（７ｃ）とを有する。これにより、フリッカの発生を抑制して表示品位の高い半透過型液晶表示装置を実現し得る。
PCT/JP2007/070415 2007-02-13 2007-10-19 アクティブマトリクス基板、アクティブマトリクス基板の製造方法、液晶表示装置および電子機器 WO2008099535A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2007800376198A CN101523282B (zh) 2007-02-13 2007-10-19 有源矩阵基板、有源矩阵基板的制造方法、液晶显示装置和电子设备
US12/445,326 US8237896B2 (en) 2007-02-13 2007-10-19 Active matrix substrate, method for manufacture of active matrix substrate, liquid crystal display device, and electronic apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007032749 2007-02-13
JP2007-032749 2007-02-13

Publications (1)

Publication Number Publication Date
WO2008099535A1 true WO2008099535A1 (ja) 2008-08-21

Family

ID=39689790

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/070415 WO2008099535A1 (ja) 2007-02-13 2007-10-19 アクティブマトリクス基板、アクティブマトリクス基板の製造方法、液晶表示装置および電子機器

Country Status (3)

Country Link
US (1) US8237896B2 (ja)
CN (1) CN101523282B (ja)
WO (1) WO2008099535A1 (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102039102B1 (ko) * 2012-12-24 2019-11-01 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
CN104914632A (zh) * 2014-03-13 2015-09-16 深圳莱宝高科技股份有限公司 半透半反显示面板
KR101977233B1 (ko) * 2017-09-29 2019-08-28 엘지디스플레이 주식회사 반사 전극, 그 제조 방법 및 반사 전극을 포함하는 유기발광 다이오드 표시장치
CN114280831A (zh) * 2020-09-28 2022-04-05 瀚宇彩晶股份有限公司 显示面板

Citations (5)

* Cited by examiner, † Cited by third party
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JP2002049035A (ja) * 2000-05-25 2002-02-15 Seiko Epson Corp 液晶装置、その製造方法および電子機器
JP2004191958A (ja) * 2002-11-27 2004-07-08 Sharp Corp 導電素子の形成方法および液晶表示装置の反射電極部形成方法
JP2004317748A (ja) * 2003-04-15 2004-11-11 Seiko Epson Corp 電気光学装置用基板、電気光学装置用基板の製造方法、電気光学装置、電気光学装置の製造方法および電子機器
JP2005316399A (ja) * 2004-02-19 2005-11-10 Sharp Corp 導電素子基板の製造方法、導電素子基板、液晶表示装置の製造方法、液晶表示装置、及び電子情報機器
JP2006330130A (ja) * 2005-05-24 2006-12-07 Mitsubishi Electric Corp 液晶表示装置およびその製造方法

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JP3384397B2 (ja) 2000-05-25 2003-03-10 セイコーエプソン株式会社 液晶装置、その製造方法および電子機器
JP4111785B2 (ja) * 2001-09-18 2008-07-02 シャープ株式会社 液晶表示装置
KR100858297B1 (ko) * 2001-11-02 2008-09-11 삼성전자주식회사 반사-투과형 액정표시장치 및 그 제조 방법
TWI230304B (en) 2002-03-04 2005-04-01 Sanyo Electric Co Display device with reflecting layer
TWI242680B (en) * 2002-07-30 2005-11-01 Hitachi Displays Ltd Liquid crystal display device
JP2005031662A (ja) * 2003-07-09 2005-02-03 Samsung Electronics Co Ltd アレー基板及びこれの製造方法と、これを有する液晶表示装置
KR100930920B1 (ko) * 2004-06-30 2009-12-10 엘지디스플레이 주식회사 씨오티 구조 액정표시장치 및 그 제조방법
KR20060134298A (ko) * 2005-06-22 2006-12-28 삼성전자주식회사 표시패널 어셈블리 및 이를 갖는 표시장치
TWI350397B (en) * 2005-07-28 2011-10-11 Sony Corp Semi-transmissive liquid crystal display device
KR20070059293A (ko) * 2005-12-06 2007-06-12 삼성전자주식회사 액정 표시 장치, 이를 위한 표시판 및 그 제조 방법
KR101192753B1 (ko) * 2005-12-29 2012-10-18 엘지디스플레이 주식회사 반투과형 액정표시소자 및 이의 제조방법
JP4907193B2 (ja) * 2006-02-24 2012-03-28 株式会社 日立ディスプレイズ 液晶表示装置
KR100805124B1 (ko) * 2007-03-05 2008-02-21 삼성에스디아이 주식회사 표시 장치의 제조 방법 및 표시 장치
KR101264717B1 (ko) * 2007-03-26 2013-05-16 엘지디스플레이 주식회사 반투과형 액정표시패널 및 그 제조방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002049035A (ja) * 2000-05-25 2002-02-15 Seiko Epson Corp 液晶装置、その製造方法および電子機器
JP2004191958A (ja) * 2002-11-27 2004-07-08 Sharp Corp 導電素子の形成方法および液晶表示装置の反射電極部形成方法
JP2004317748A (ja) * 2003-04-15 2004-11-11 Seiko Epson Corp 電気光学装置用基板、電気光学装置用基板の製造方法、電気光学装置、電気光学装置の製造方法および電子機器
JP2005316399A (ja) * 2004-02-19 2005-11-10 Sharp Corp 導電素子基板の製造方法、導電素子基板、液晶表示装置の製造方法、液晶表示装置、及び電子情報機器
JP2006330130A (ja) * 2005-05-24 2006-12-07 Mitsubishi Electric Corp 液晶表示装置およびその製造方法

Also Published As

Publication number Publication date
CN101523282B (zh) 2011-06-15
US8237896B2 (en) 2012-08-07
CN101523282A (zh) 2009-09-02
US20100006842A1 (en) 2010-01-14

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