WO2008088019A1 - バイポーラ型半導体素子 - Google Patents

バイポーラ型半導体素子 Download PDF

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Publication number
WO2008088019A1
WO2008088019A1 PCT/JP2008/050533 JP2008050533W WO2008088019A1 WO 2008088019 A1 WO2008088019 A1 WO 2008088019A1 JP 2008050533 W JP2008050533 W JP 2008050533W WO 2008088019 A1 WO2008088019 A1 WO 2008088019A1
Authority
WO
WIPO (PCT)
Prior art keywords
forward current
semiconductor element
bipolar semiconductor
drift layer
sic substrate
Prior art date
Application number
PCT/JP2008/050533
Other languages
English (en)
French (fr)
Inventor
Koji Nakayama
Yoshitaka Sugawara
Original Assignee
The Kansai Electric Power Co., Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by The Kansai Electric Power Co., Inc. filed Critical The Kansai Electric Power Co., Inc.
Publication of WO2008088019A1 publication Critical patent/WO2008088019A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

　ｐｉｎダイオード７０はｎ型４Ｈ型ＳｉＣ基板２１とＳｉＣ基板２１上に形成されたドリフト層２３を備える。ドリフト層２３はドナー密度が１×１０１３ｃｍ－３で膜厚は２００μｍである。順方向電流密度１００Ａ／ｃｍ２での通電開始直後の順方向電流電圧特性Ｋ１と、１時間通電後の順方向電流電圧特性Ｋ２との順方向電圧差ΔＶｆは、０.１Ｖ以下であり、ほとんど差がなかった。
PCT/JP2008/050533 2007-01-17 2008-01-17 バイポーラ型半導体素子 WO2008088019A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007008053A JP5147244B2 (ja) 2007-01-17 2007-01-17 バイポーラ型半導体素子
JP2007-008053 2007-01-17

Publications (1)

Publication Number Publication Date
WO2008088019A1 true WO2008088019A1 (ja) 2008-07-24

Family

ID=39636020

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/050533 WO2008088019A1 (ja) 2007-01-17 2008-01-17 バイポーラ型半導体素子

Country Status (2)

Country Link
JP (1) JP5147244B2 (ja)
WO (1) WO2008088019A1 (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012055777A1 (en) * 2010-10-29 2012-05-03 Fairchild Semiconductor Corporation Method of manufacturing a sic bipolar junction transistor and sic bipolar junction transistor thereof
US8332937B1 (en) 2008-12-29 2012-12-11 Google Inc. Access using images
US8693807B1 (en) 2008-10-20 2014-04-08 Google Inc. Systems and methods for providing image feedback
US8829533B2 (en) 2007-04-11 2014-09-09 Fairchild Semiconductor Corporation Silicon carbide semiconductor device
JP2016189480A (ja) * 2011-05-16 2016-11-04 クリー インコーポレイテッドＣｒｅｅ Ｉｎｃ． 負べベルにより終端された高阻止電圧を有するＳｉＣデバイス
US10415154B2 (en) 2015-12-02 2019-09-17 Mitsubishi Electric Corporation Silicon carbide epitaxial substrate and silicon carbide semiconductor device
CN113892189A (zh) * 2019-07-11 2022-01-04 富士电机株式会社 碳化硅半导体装置及碳化硅半导体装置的制造方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110169015A1 (en) * 2008-08-26 2011-07-14 Honda Motor Co., Ltd. Bipolar semiconductor device and method for manufacturing same
JP5318624B2 (ja) * 2009-03-27 2013-10-16 日本電信電話株式会社 ヘテロ接合バイポーラトランジスタの製造方法
JP2011109018A (ja) * 2009-11-20 2011-06-02 Kansai Electric Power Co Inc:The バイポーラ半導体素子

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002520857A (ja) * 1998-07-09 2002-07-09 クリー インコーポレイテッド 炭化ケイ素水平チャネルの緩衝ゲート用半導体ディバイス
WO2004090990A1 (ja) * 2003-04-09 2004-10-21 The Kansai Electric Power Co., Inc. ゲートターンオフサイリスタ
JP2005217441A (ja) * 2005-04-11 2005-08-11 Kansai Electric Power Co Inc:The 電圧制御型半導体装置とその製法及びそれを用いた電力変換装置
JP2005268465A (ja) * 2004-03-18 2005-09-29 Ngk Insulators Ltd 接合ゲート型静電誘導型サイリスタおよび当該接合ゲート型静電誘導型サイリスタを用いた高圧パルス発生装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005167035A (ja) * 2003-12-03 2005-06-23 Kansai Electric Power Co Inc:The 炭化珪素半導体素子およびその製造方法
CN1938820A (zh) * 2004-03-26 2007-03-28 关西电力株式会社 双极型半导体装置及其制造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002520857A (ja) * 1998-07-09 2002-07-09 クリー インコーポレイテッド 炭化ケイ素水平チャネルの緩衝ゲート用半導体ディバイス
WO2004090990A1 (ja) * 2003-04-09 2004-10-21 The Kansai Electric Power Co., Inc. ゲートターンオフサイリスタ
JP2005268465A (ja) * 2004-03-18 2005-09-29 Ngk Insulators Ltd 接合ゲート型静電誘導型サイリスタおよび当該接合ゲート型静電誘導型サイリスタを用いた高圧パルス発生装置
JP2005217441A (ja) * 2005-04-11 2005-08-11 Kansai Electric Power Co Inc:The 電圧制御型半導体装置とその製法及びそれを用いた電力変換装置

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8829533B2 (en) 2007-04-11 2014-09-09 Fairchild Semiconductor Corporation Silicon carbide semiconductor device
US8693807B1 (en) 2008-10-20 2014-04-08 Google Inc. Systems and methods for providing image feedback
US8332937B1 (en) 2008-12-29 2012-12-11 Google Inc. Access using images
WO2012055777A1 (en) * 2010-10-29 2012-05-03 Fairchild Semiconductor Corporation Method of manufacturing a sic bipolar junction transistor and sic bipolar junction transistor thereof
US8704546B2 (en) 2010-10-29 2014-04-22 Fairchild Semiconductor Corporation Method of manufacturing a SiC bipolar junction transistor and SiC bipolar junction transistor thereof
US8823410B2 (en) 2010-10-29 2014-09-02 Fairchild Semiconductor Corporation Method of manufacturing a SiC bipolar junction transistor and SiC bipolar junction transistor thereof
JP2016189480A (ja) * 2011-05-16 2016-11-04 クリー インコーポレイテッドＣｒｅｅ Ｉｎｃ． 負べベルにより終端された高阻止電圧を有するＳｉＣデバイス
US10415154B2 (en) 2015-12-02 2019-09-17 Mitsubishi Electric Corporation Silicon carbide epitaxial substrate and silicon carbide semiconductor device
US10774441B2 (en) 2015-12-02 2020-09-15 Mitsubishi Electric Corporation Silicon carbide epitaxial substrate and silicon carbide semiconductor device
US10995420B2 (en) 2015-12-02 2021-05-04 Mitsubishi Electric Corporation Silicon carbide epitaxial substrate and silicon carbide semiconductor device
CN113892189A (zh) * 2019-07-11 2022-01-04 富士电机株式会社 碳化硅半导体装置及碳化硅半导体装置的制造方法

Also Published As

Publication number Publication date
JP5147244B2 (ja) 2013-02-20
JP2008177274A (ja) 2008-07-31

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