WO2009022592A1 - ソフトリカバリーダイオード - Google Patents

ソフトリカバリーダイオード Download PDF

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Publication number
WO2009022592A1
WO2009022592A1 PCT/JP2008/064097 JP2008064097W WO2009022592A1 WO 2009022592 A1 WO2009022592 A1 WO 2009022592A1 JP 2008064097 W JP2008064097 W JP 2008064097W WO 2009022592 A1 WO2009022592 A1 WO 2009022592A1
Authority
WO
WIPO (PCT)
Prior art keywords
type
base layer
type base
recovery diode
soft recovery
Prior art date
Application number
PCT/JP2008/064097
Other languages
English (en)
French (fr)
Inventor
Yoichi Miyanagi
Yoshitaka Sugawara
Original Assignee
The Kansai Electric Power Co., Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by The Kansai Electric Power Co., Inc. filed Critical The Kansai Electric Power Co., Inc.
Publication of WO2009022592A1 publication Critical patent/WO2009022592A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8618—Diodes with bulk potential barrier, e.g. Camel diodes, Planar Doped Barrier diodes, Graded bandgap diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

　ｎ+型半導体基板２と、上記ｎ+型半導体基板２上に形成されたｎ--型ベース層３と、上記ｎ--型ベース層３上に形成されたｎ-型ベース層４と、上記ｎ-型ベース層４上に形成されたｐ+型アノード層５とを備える。上記ｎ--型ベース層３は、ｎ-型ベース層４よりも低濃度のｎ型不純物を有する。上記ｐ+型アノード層５とｎ-型ベース層４でｐｎ接合を形成する。上記ｐ+型アノード層５上にアノード電極６を形成し、ｎ+型半導体基板２の下側にカソード電極７を形成する。
PCT/JP2008/064097 2007-08-13 2008-08-06 ソフトリカバリーダイオード WO2009022592A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007210926A JP2009049045A (ja) 2007-08-13 2007-08-13 ソフトリカバリーダイオード
JP2007-210926 2007-08-13

Publications (1)

Publication Number Publication Date
WO2009022592A1 true WO2009022592A1 (ja) 2009-02-19

Family

ID=40350645

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/064097 WO2009022592A1 (ja) 2007-08-13 2008-08-06 ソフトリカバリーダイオード

Country Status (2)

Country Link
JP (1) JP2009049045A (ja)
WO (1) WO2009022592A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014112637A (ja) * 2012-11-06 2014-06-19 Toshiba Corp 半導体装置
CN116799039A (zh) * 2023-06-30 2023-09-22 海信家电集团股份有限公司 快恢复二极管

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9087812B2 (en) * 2011-07-15 2015-07-21 International Rectifier Corporation Composite semiconductor device with integrated diode
JP6271309B2 (ja) 2014-03-19 2018-01-31 株式会社東芝 半導体基板の製造方法、半導体基板および半導体装置
JP6271356B2 (ja) 2014-07-07 2018-01-31 株式会社東芝 半導体装置の製造方法
JP6415946B2 (ja) 2014-11-26 2018-10-31 株式会社東芝 半導体装置の製造方法及び半導体装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07273354A (ja) * 1994-03-31 1995-10-20 Shindengen Electric Mfg Co Ltd ダイオ−ド
JPH08316499A (ja) * 1995-05-23 1996-11-29 Toyo Electric Mfg Co Ltd 高速ダイオード
JPH1126779A (ja) * 1997-04-04 1999-01-29 Siemens Ag パワーダイオード
JP2000323488A (ja) * 1999-05-10 2000-11-24 Fuji Electric Co Ltd ダイオードおよびその製造方法
WO2002001643A2 (en) * 2000-06-26 2002-01-03 Fairchild Semiconductor Corporation Soft recovery power diode and related method
JP2003124478A (ja) * 2001-10-09 2003-04-25 Matsushita Electric Ind Co Ltd 半導体装置
JP2006303469A (ja) * 2005-03-25 2006-11-02 Shindengen Electric Mfg Co Ltd ＳｉＣ半導体装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07273354A (ja) * 1994-03-31 1995-10-20 Shindengen Electric Mfg Co Ltd ダイオ−ド
JPH08316499A (ja) * 1995-05-23 1996-11-29 Toyo Electric Mfg Co Ltd 高速ダイオード
JPH1126779A (ja) * 1997-04-04 1999-01-29 Siemens Ag パワーダイオード
JP2000323488A (ja) * 1999-05-10 2000-11-24 Fuji Electric Co Ltd ダイオードおよびその製造方法
WO2002001643A2 (en) * 2000-06-26 2002-01-03 Fairchild Semiconductor Corporation Soft recovery power diode and related method
JP2003124478A (ja) * 2001-10-09 2003-04-25 Matsushita Electric Ind Co Ltd 半導体装置
JP2006303469A (ja) * 2005-03-25 2006-11-02 Shindengen Electric Mfg Co Ltd ＳｉＣ半導体装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014112637A (ja) * 2012-11-06 2014-06-19 Toshiba Corp 半導体装置
CN116799039A (zh) * 2023-06-30 2023-09-22 海信家电集团股份有限公司 快恢复二极管
CN116799039B (zh) * 2023-06-30 2024-03-08 海信家电集团股份有限公司 快恢复二极管

Also Published As

Publication number Publication date
JP2009049045A (ja) 2009-03-05

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