WO2008084628A1 - 半導体装置の製造方法、表示装置の製造方法、半導体装置、半導体素子の製造方法、及び、半導体素子 - Google Patents

半導体装置の製造方法、表示装置の製造方法、半導体装置、半導体素子の製造方法、及び、半導体素子 Download PDF

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Publication number
WO2008084628A1
WO2008084628A1 PCT/JP2007/074157 JP2007074157W WO2008084628A1 WO 2008084628 A1 WO2008084628 A1 WO 2008084628A1 JP 2007074157 W JP2007074157 W JP 2007074157W WO 2008084628 A1 WO2008084628 A1 WO 2008084628A1
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Prior art keywords
manufacturing
semiconductor element
semiconductor
semiconductor device
layer
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PCT/JP2007/074157
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English (en)
French (fr)
Inventor
Michiko Takei
Kazuhide Tomiyasu
Yasumori Fukushima
Yutaka Takafuji
Masao Moriguchi
Steven Roy Droes
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Sharp Kabushiki Kaisha
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Priority to EP07859831A priority Critical patent/EP2079105A4/en
Priority to US12/447,821 priority patent/US20100059892A1/en
Priority to JP2008553037A priority patent/JP5243271B2/ja
Publication of WO2008084628A1 publication Critical patent/WO2008084628A1/ja

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  • Chemical & Material Sciences (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

本発明は、半導体素子の微細化及び低抵抗化を実現することができるとともに、工程を簡略化することができる半導体装置の製造方法、表示装置の製造方法、半導体装置、半導体素子の製造方法、及び、半導体素子を提供する。本発明の半導体装置の製造方法は、基板上に半導体素子を有する半導体装置を製造する方法であって、上記製造方法は、シリコン層及び金属層が積層された構造を有する半導体素子を基板上に転写し、加熱により、シリコン層中の金属層側の部分を構成するシリコンと金属層中のシリコン層側の部分を構成する金属とから金属シリサイドを形成する金属シリサイド形成工程を含むものである。
PCT/JP2007/074157 2007-01-10 2007-12-14 半導体装置の製造方法、表示装置の製造方法、半導体装置、半導体素子の製造方法、及び、半導体素子 WO2008084628A1 (ja)

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EP07859831A EP2079105A4 (en) 2007-01-10 2007-12-14 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING DISPLAY DEVICE, SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR ELEMENT
US12/447,821 US20100059892A1 (en) 2007-01-10 2007-12-14 Production method of semiconductor device, production method of display device, semiconductor device, production method of semiconductor element, and semiconductor element
JP2008553037A JP5243271B2 (ja) 2007-01-10 2007-12-14 半導体装置の製造方法、表示装置の製造方法、半導体装置、半導体素子の製造方法、及び、半導体素子

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WO2011092781A1 (ja) 2010-02-01 2011-08-04 シャープ株式会社 半導体装置及びその製造方法

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CN101523581A (zh) 2009-09-02
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EP2079105A4 (en) 2012-07-25
JPWO2008084628A1 (ja) 2010-04-30

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