WO2008083671A1 - Dispositif optoélectronique et procédé de fabrication d'un dispositif optoélectronique - Google Patents

Dispositif optoélectronique et procédé de fabrication d'un dispositif optoélectronique Download PDF

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Publication number
WO2008083671A1
WO2008083671A1 PCT/DE2008/000028 DE2008000028W WO2008083671A1 WO 2008083671 A1 WO2008083671 A1 WO 2008083671A1 DE 2008000028 W DE2008000028 W DE 2008000028W WO 2008083671 A1 WO2008083671 A1 WO 2008083671A1
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WIPO (PCT)
Prior art keywords
layer
optoelectronic device
electrode
electronic
electrodes
Prior art date
Application number
PCT/DE2008/000028
Other languages
German (de)
English (en)
Inventor
Ralph Pätzold
Joachim Wecker
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2008083671A1 publication Critical patent/WO2008083671A1/fr

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/129—Chiplets
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/17—Passive-matrix OLED displays
    • H10K59/179—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/13—Active-matrix OLED [AMOLED] displays comprising photosensors that control luminance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80517—Multilayers, e.g. transparent multilayers

Definitions

  • the present invention relates to an optoelectronic device comprising an organic material-containing layer stack with an active region for emitting electromagnetic radiation and a method for producing an optoelectronic device.
  • Optoelectronic devices of the aforementioned type are referred to as organic light-emitting diodes ("OLEDs"), Such optoelectronic devices are primarily used as screens (televisions, PC screens, displays for automobiles, displays for mobile phones, touchscreen displays Another field of application is general lighting, in particular large-scale room lighting.
  • OLEDs organic light-emitting diodes
  • the object of the invention is to provide an optoelectronic device and a method for producing an optoelectronic device with which or in a simple manner a compact construction of the optoelectronic device is made possible.
  • the object is solved by the features of the independent claims.
  • Advantageous embodiments of the invention are characterized in the subclaims.
  • the invention is characterized by an optoelectronic device comprising an organic material-containing layer stack with an active region for emission of electromagnetic radiation, and an electronic unit, wherein the layer stack and the electronic unit are arranged on a common substrate ,
  • the substrate as the carrier material both for the layer containing the organic material and the active region designed for emitting electromagnetic radiation and for the electronic unit.
  • Such a structure is characterized by a particularly high integration density and consequently by a special user-friendliness.
  • the electronic unit has a control unit for controlling and / or regulating the layer stack. Furthermore, the electronic unit may consist of a control unit for controlling and / or regulating the layer stack.
  • the electronic unit has a protective unit for protecting the layer stack.
  • the electronic unit consists of the protection unit.
  • the protection unit may be a reversely poled diode, in particular a Zener diode, which is the stack of layers is connected in parallel to counteract voltage overshoots.
  • the electronic unit may have a detection unit or monitoring unit for detecting or monitoring the electromagnetic radiation.
  • the detection or monitoring unit may be a sensor that detects, for example, the ambient radiation or the temperature.
  • a readjustment can take place by means of the control unit and the intensity of the emitted radiation can be adjusted as desired.
  • the layer stack comprises first electrodes and the electronic unit has second electrodes, and at least one of the first electrodes and at least one of the second electrodes are electrically conductively coupled to one another, i. in particular, they are electrically connected to one another.
  • the optoelectronic device has a protective layer, which is arranged and configured so that the electronic unit is at least partially disposed between the substrate and the protective layer.
  • a protective layer which is arranged and configured so that the electronic unit is at least partially disposed between the substrate and the protective layer.
  • the substrate and / or the protective layer has a dimensionally stable material.
  • the layer stack and the electronic unit can be coupled mechanically stable.
  • the substrate and / or the protective layer comprises glass or a plastic or metal foil. It is also conceivable to use a layer stack with layers of different materials, for example of different plastics and / or metals, in particular metal oxides, metal nitrides or metal oxynitrides. In this way, the substrate and / or the protective layer can be formed inexpensively. Glass is characterized in particular by its suitability for optoelectronic devices.
  • the substrate and / or the protective layer comprises a material that is transparent to the electromagnetic radiation that can be emitted by the active region.
  • the electromagnetic radiation emitted by the active region can reach a region outside the optoelectronic device in which it can be used.
  • a further advantageous embodiment consists in that one of the first electrodes and / or one of the second electrodes has at least one layer which comprises an electrically conductive oxide and / or a metal. It is also advantageous if at least one of the first electrodes and / or one of the second electrodes has a layer sequence with at least one first layer with an electrically conductive oxide and a second layer with a metal. This has the advantage that the first electrodes and / or the second electrodes can be used both for the layer stack with the active region designed for emitting electromagnetic radiation and for the electronic unit.
  • the metal is selected from a group of copper, aluminum, silver and chromium. These metals have the advantage of low electrical resistance. Furthermore, such a material may allow a particularly good adhesion of the second layer to an electrically conductive oxide of a first layer. Thus, a stable electrically conductive and mechanical coupling between the first layer and the second layer can be achieved.
  • At least one of the first electrodes is electrically conductively coupled to a plurality of second electrodes. This makes it possible to realize the construction of complex electronic switching structures by means of the first and the second electrodes.
  • adjacent ones of the plurality of second electrodes at least partially each have a spacing of about 100 microns to 300 microns from each other. This allows a miniaturized training of the electronic unit in the Optoelectronic device and thus a space-saving design of the electronic unit.
  • the optoelectronic device has a plurality of layer stacks. This allows the formation of a large-area optoelectronic device.
  • the electronic unit comprises a plurality of electronic subunits, which are arranged spatially separated from one another.
  • the electronic control unit comprises a plurality of electronic sub-control units. This makes it possible to distribute the electronic sub-control units on the substrate on which the layer stacks and the electronic control unit are arranged. In particular, this makes it possible to achieve a homogeneous emission of electromagnetic radiation over the entire optoelectronic device.
  • a group of layer stacks can each be controlled by one of the electronic sub-control units.
  • individual sub-control units which are designed to control and / or regulate the layer stacks can each control or regulate a subset of layer stacks. It is thus possible to achieve a good distribution of the electrical load on the various electronic sub-control units.
  • the optoelectronic device has a single external electrical lead, which is electrically conductive with the electronic unit is coupled. This makes it possible to connect the optoelectronic device by means of a single external supply line via the electronic unit, in particular via the electronic control unit, to an external power and / or voltage supply, whereby the assembly of the optoelectronic device can be facilitated. In particular, it can thus be avoided that a large number of external electrical supply lines must be brought to the optoelectronic device.
  • the optoelectronic device has a radiation sensor, which is electrically coupled to the electronic control unit in such a way that a signal of the radiation sensor can be emitted to the electronic control unit, and wherein the radiation sensor is arranged and configured such that the emission electromagnetic Radiation formed active region of the layer stack in response to the signal of the radiation sensor can be controlled.
  • the radiation sensor is arranged and configured such that the emission electromagnetic Radiation formed active region of the layer stack in response to the signal of the radiation sensor can be controlled.
  • the invention comprises a method for producing an optoelectronic device comprising the steps of: providing a substrate, applying a first layer to the substrate, wherein the first layer comprises an electrically conductive oxide, applying a second layer comprising a metal, on the first layer, removing portions of the first layer and / or portions of the second layer to form at least a first electrode and a second electrode, and depositing an active region of a layer stack on the second layer of the first electrode and electronic components on the second Layer of the second electrode, such that the electronic components are electrically conductively coupled to the second electrode. It is thus possible to combine different steps in the production of the organic material-containing layer stack and the electronic unit with each other, rather than performing them in separate steps. This allows a particularly cost-effective production of an optoelectronic device.
  • the electronic components are first applied to the second layer of the second electrode and then the active region of the layer stack is applied to the second layer of the first electrode.
  • the electronic components are applied to the second layer of the second electrode by means of thick-film technology.
  • Method of thick film technology represent particularly cost-effective and proven methods for applying electronic components to substrates or layers.
  • the first layer which preferably comprises electrically conductive oxide, can advantageously be processed before the further steps.
  • FIG. 1 shows a sectional view of an optoelectronic device
  • Figure 2 is a schematic, partially broken plan view of an optoelectronic device
  • FIG. 3 shows a flow chart for a method for producing an optoelectronic device.
  • FIG. 1 shows an exemplary embodiment of an optoelectronic device.
  • the optoelectronic device has a layer stack 10 with an active region designed for emitting electromagnetic radiation 12, wherein the active region 12 contains an organic material.
  • the active region 12 may comprise organic polymers, organic oligomers, organic monomers, small organic molecules, small molecule, or combinations thereof Suitable materials, as well as arrangements and structuring of the active region materials 12, are known to those skilled in the art Thus, electron and hole recombination can produce electromagnetic radiation having a single wavelength or a range of wavelengths in the active region 12. In the case of an observer, a monochrome, a multicolored and / or a mixed-color luminous impression may occur to be awakened.
  • first electrodes 14, 16 Adjacent to the active region 12, first electrodes 14, 16 are arranged.
  • the first electrodes 14, 16 may have a surface or structured in partial areas.
  • the first electrode 14 is arranged below the active region 12 with respect to FIG. 1 and is preferably designed as an anode, with which it can serve as a hole-inducing element.
  • the first electrode 14 has a first layer 141 and a second layer 142, wherein the second layer 142 of the first electrode 14 of the first layer 141 of the first electrode 14 is associated.
  • the first layer 141 of the first electrode 14 is in particular formed as an electrically conductive oxide. Particularly preferred is the formation of the first layer 141 of the first electrode 14 as a transparent electrically conductive oxide (transparent conductive oxide, TCO).
  • TCO transparent conductive oxide
  • Transparent electrically conductive oxides are transparent conductive materials, usually metal oxides, such as For example, zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide or particularly preferably indium tin oxide (ITO).
  • metal oxides such as zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide or particularly preferably indium tin oxide (ITO).
  • binary metal-oxygen compounds such as ZnO, SnO 2 or In 2 O 3 also include ternary metal-oxygen compounds such as Zn 2 SnO 4 , CdSnO 3 , ZnSnO 3 , MgIn 2 O 4 , GaInO 3 , Zn 2 In 2 O 5 or In 4 Sn 3 Oi 2 or mixtures of different transparent electroconductive oxides to the group of TCOs.
  • the TCOs do not necessarily have to correspond to a stoichiometric composition and may also be p- or n-doped.
  • the second layer 142 of the first electrode 14 preferably comprises chromium or copper.
  • the further first electrode 16 arranged above the active region 12 with respect to FIG. 1 is preferably designed as a cathode and thus serves as an electron-inducing element.
  • Aluminum, barium, indium, silver, gold, magnesium, calcium or lithium, as well as compounds, combinations and alloys thereof, may in particular be advantageous as material for this electrode.
  • the optoelectronic device further has an electronic unit, which in this embodiment consists of an electronic control unit 20 which is designed to control and / or regulate the layer stack 10.
  • the electronic control unit 20 has second electrodes 24, 26, the electronic components 22 to contact.
  • the second electrode 24 disposed below the electronic components 22 with respect to FIG. 1 has a first layer 241 and a second layer 242.
  • the first layer 241 is formed in the same manner as the first layer 141 of the first electrode 14 and the second layer
  • the second electrode 24 is formed like the second layer 142 of the first electrode 14.
  • the further second electrode 26 arranged above the electronic components 22 with respect to FIG. 1 is designed like the further first electrode 16 above the active region 12 of the layer stack 10.
  • the electronic control unit 20 may also be part of an electronic circuit.
  • the electronic control unit 20 may be, for example, an integrated circuit (IC) or an active or passive electronic assembly or an active or passive electronic component for electrical circuits.
  • IC integrated circuit
  • the layer stack 10 and the electronic control unit 20 are arranged on a common substrate 30. It is particularly preferred if the substrate 30 comprises glass. Alternatively or additionally, the substrate 30 may also include quartz, plastic films, metal, metal foils, silicon wafers, or any other suitable substrate material. Alternatively or additionally, the substrate 30 may also comprise a laminate or a layer sequence of a plurality of layers. In this case, at least one layer may comprise glass or be made of glass. In particular, in the case of a substrate 30 formed from a layer sequence, at least the layer may comprise glass on which the layer stack 10 and the electronic control unit 20 are arranged. In addition, the substrate 30 may also comprise plastic.
  • the optoelectronic device is designed as an OLED and in particular as a so-called “bottom emitter", that is to say that it emits in the active region 12 Electromagnetic radiation is radiated through the substrate 30, the substrate 30 may advantageously have a transparency for at least a portion of the electromagnetic radiation generated in the active region 12. In the bottom emitter configuration, the first electrode 14 and the second electrode 24 can advantageously also have transparency for at least some of the electromagnetic radiation generated in the active region 12.
  • the further second electrode 26, which is arranged above the electronic components 22 with respect to FIG. 1, can be embodied as a cathode and thus serve as an electron-inducing element.
  • the optoelectronic device further comprises a protective layer 40, which is coupled to the substrate 30 such that the layer stack 10 and the electronic control unit 20 with the associated electrodes 14, 16, 24, 26 and the active region 12 and the electronic components 22 before Moisture and / or oxidizing substances such as oxygen can be protected.
  • the encapsulation may preferably comprise one or more layers, wherein the encapsulation protective layer 40 preferably comprises planarization layers, barrier layers, water and / or oxygen absorbing layers, tie layers or combinations thereof.
  • the optoelectronic device can have optoelectronic elements, which are arranged downstream of the active region 12 in the emission direction of the electromagnetic radiation.
  • optoelectronic elements which are arranged downstream of the active region 12 in the emission direction of the electromagnetic radiation.
  • the substrate 30 the bottom emitter
  • the Protective layer 40 for a top emitter
  • Circular polarizer can be arranged with which can be advantageously avoided that light that is radiated into the optoelectronic device from the outside and can be reflected, for example, to the electrodes 14, 16, 24, 26, again emerge from the optoelectronic device.
  • the optoelectronic device further has an external electrical lead 50, which is electrically coupled to the electronic control unit 20.
  • the external electrical lead 50 is formed in the embodiment shown here as a single external electrical lead, which serves to electrically couple the optoelectronic device with other electronic control units and / or a power and / or a voltage supply.
  • the optoelectronic device may also have a plurality of external electrical leads.
  • FIG. 2 shows a schematic representation of the optoelectronic device in a partially broken plan view.
  • the optoelectronic device has a plurality of first electrodes 14, 16 and a plurality of second electrodes 24, 26.
  • first electrodes 14, 16 and the second electrodes 24 are shown only partially or broken, and the further second electrodes 26 Not shown.
  • the first electrodes 14 and the second electrodes 24 are preferably arranged substantially in a common plane.
  • the further first electrodes 16 are preferably in Substantially arranged in a plane which is different from the common plane in which the first electrodes 14 and the second electrodes 24 are arranged.
  • the electronic unit has a radiation sensor 52 and an electronic control unit 20.
  • the electronic control unit 20 comprises a plurality of electronic sub-control units 20a, 20b, 20c, 20d, which are arranged distributed on the substrate 30.
  • 20b, 20c, 20d are arranged in corner regions of the substrate 30 in the preferred embodiment shown here, but may alternatively be located in other regions of the substrate
  • the first electrodes 14 and the second electrodes 24 are electrically conductively coupled together.
  • the first electrodes 14 are formed below the active region 12 of the layer stack 10 in the form of parallel adjacent conductor tracks and the other first electrodes 16 above the active region 12 of the layer stack 10 as perpendicular to the first electrode 14 extending parallel juxtaposed interconnects.
  • the active regions 12 of the layer stack 10 are arranged between the first electrodes 14 and the further first electrodes 16.
  • the electronic sub-control units 20a, 20b, 20c, 20d are configured and arranged such that each of the electronic sub-control units 20a, 20b, 20c, 20d has a Group 11 of layer stacks 10 with the active areas 12 can control. This is illustrated by way of example on the top right in FIG. 2 with respect to the electronic sub-control unit 20b.
  • Neighboring the second electrodes 24 each have a distance D to each other.
  • the distance D is preferably about 100 microns to 300 microns, wherein the distance D is to be understood as a center-to-center distance, so that the distance D denotes a grid of adjacent second electrode 24. Due to the distance D of about 100 microns to 300 microns on the one hand miniaturization of the electronic control unit 20 allows, on the other hand, thereby the electrical contacting of adjacent second electrodes 24 can be easily performed. In a corresponding manner adjacent to the other second electrodes 26, not shown, each have a distance D to each other.
  • the radiation sensor 52 is electrically coupled to the electronic control unit 20 via a sensor connection line 54.
  • a signal 56 of the radiation sensor 52 can pass via the sensor connection line 54 to the electronic control unit 20, in particular the electronic sub-control unit 20b.
  • the signal 56 of the radiation sensor 52 can be evaluated. If the electronic control unit 20 designed to control and / or regulate the layer stack 10 detects, by means of the radiation sensor 52, that the emission of electromagnetic radiation from the active region 12 of the layer stack 10 is no longer sufficient, it is possible to use a current or voltage-controlled control to control the active region 12 of the layer stack 10 so that from this again a sufficiently high level of electromagnetic radiation is emitted.
  • Optoelectronic devices as shown in FIGS. 1 and 2 can, owing to the advantages already described, enable a high level of economic efficiency and low costs through an efficient use of material.
  • such optoelectronic devices may be suitable for use in display and / or
  • Lighting equipment characterized by a compact, space-saving and flat design.
  • the layer stack 10 and the electronic unit By forming the layer stack 10 and the electronic unit on the common substrate 30, a particularly space-saving design of the optoelectronic device is possible in particular. Due to the common protective layer 40 for the electronic unit 20 and the layer stack 10, the electronic unit does not require a separate housing. The handling of the optoelectronic device can be formed very simply by the common substrate 30, the formation of a common protective layer 40 and a single common external electrical lead 50 for the electronic unit 20 and the layer stack 10.
  • FIG. 3 shows a flow chart for the method for producing an optoelectronic device.
  • a step S8 the method is started.
  • the substrate 30 is provided.
  • the provision may include method steps known to the person skilled in the art for producing a suitable optoelectronic device.
  • the first layer 141, 241 is applied to the substrate 30, wherein the first layer 141, 241 comprises an electrically conductive oxide.
  • the application of the first layer 141, 241 is preferably carried out by means of lithography. In an alternative embodiment of the method, the first layer 141, 241 may already be applied to the provided substrate 30.
  • step S14 which is optional, portions of the first layer 141, 241 are removed.
  • the second layer 142, 242 which comprises a metal, is applied to the first layer 141, 241.
  • the second layer 142, 242 is applied to the first layer 141, 241 by lithography.
  • the second layer 142, 242 is in particular mechanically coupled to the first layer 141, 241 by an adhesion promoter, which may preferably be chromium or molybdenum.
  • a step S18 by removing portions of the first layer 141, 241 and / or portions of the second layer 142, 242, the first electrode 14 and the second electrode 24 are formed. It is thus preferably the shape of the layer stack 10 of the optoelectronic device and the layout of the electronic unit, in particular the circuits of the electronic control unit 20 is formed.
  • the active region 12 of the layer stack 10 are applied to the second layer 142 of the first electrode 14 and the electronic components 22 to the second layer 242 of the second electrode. The application of the electronic components 22 takes place such that the electronic components 22 are electrically conductively coupled to the second electrode 24.
  • the application of the electronic components 22 is preferably carried out in thick-film technology, which can be realized in a particularly simple and cost-effective manner.
  • the electronic components 22 are first applied to the second layer 242 of the second electrode 24 and then the active region 12 of the layer stack 10 is applied to the second layer 142 of the first electrode 14.
  • the active region 12 of the layer stack 10 may be applied to the second layer 142 of the first electrode 14 at a time of the process just before the application of the protective layer 40 (see step S24), thereby allowing the active region 12 can be protected from moisture or other external influences.
  • the external electrical supply line 50 is provided and the external electrical supply line 50 with the electronic unit, in particular the electronic control unit 20, electrically conductively coupled.
  • the electronic unit in particular the electronic control unit 20, electrically conductively coupled.
  • the electronic unit is at least partially reformed by means of the protective layer 40, which preferably comprises a plastics material, particularly preferably an epoxy resin.
  • the protective layer 40 which preferably comprises a plastics material, particularly preferably an epoxy resin.
  • step S26 the method for producing an optoelectronic device ends.

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  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Dispositif optoélectronique comportant une superposition de couches (10) contenant un matériau organique et présentant une zone active (12) conçue pour émettre un rayonnement électromagnétique, ledit dispositif comprenant également une unité électronique (20). La superposition de couches (10) et l'unité électronique (20) sont disposées sur un même substrat (30).
PCT/DE2008/000028 2007-01-11 2008-01-09 Dispositif optoélectronique et procédé de fabrication d'un dispositif optoélectronique WO2008083671A1 (fr)

Applications Claiming Priority (2)

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DE102007001742A DE102007001742A1 (de) 2007-01-11 2007-01-11 Optoelektronische Vorrichtung und Verfahren zur Herstellung einer optoelektronischen Vorrichtung
DE102007001742.3 2007-01-11

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WO2008083671A1 true WO2008083671A1 (fr) 2008-07-17

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DE (1) DE102007001742A1 (fr)
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101887904B (zh) * 2009-05-15 2013-02-06 上海天马微电子有限公司 集成触摸屏的有机发光二极管显示器

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5229887B2 (ja) * 2008-08-06 2013-07-03 株式会社ワコム 位置検出装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6147451A (en) * 1997-08-08 2000-11-14 Sanyo Electric Co., Ltd. Organic electrominiscent display device
JP2001130048A (ja) * 1999-11-08 2001-05-15 Canon Inc 発光装置およびそれを用いた露光装置、記録装置
EP1164641A2 (fr) * 2000-06-12 2001-12-19 Semiconductor Energy Laboratory Co., Ltd. Module à émission de lumière, sa méthode de commande et capteur optique
EP1227468A2 (fr) * 2001-01-30 2002-07-31 Eastman Kodak Company Méthode de integration de système de commande et de dispositifs d'affichage sur un substrat commun
EP1482572A1 (fr) * 2003-05-29 2004-12-01 Sony Corporation Procédé de fabrication d'une structure laminée, structure laminée, dispositif d'affichage et unité d'affichage avec structure laminée
US20060228974A1 (en) * 2005-03-31 2006-10-12 Theiss Steven D Methods of making displays

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4831874B2 (ja) * 2001-02-26 2011-12-07 株式会社半導体エネルギー研究所 発光装置及び電子機器
US7483001B2 (en) * 2001-11-21 2009-01-27 Seiko Epson Corporation Active matrix substrate, electro-optical device, and electronic device
JP3865245B2 (ja) * 2003-03-12 2007-01-10 富士電機ホールディングス株式会社 有機ｅｌディスプレイの製造方法および製造装置
US20060264143A1 (en) * 2003-12-08 2006-11-23 Ritdisplay Corporation Fabricating method of an organic electroluminescent device having solar cells
DE10359881A1 (de) * 2003-12-12 2005-07-14 Samsung SDI Co., Ltd., Suwon OLED-Bauelement und Aktiv-Matrix-Display auf Basis von OLED-Bauelementen und Verfahren zum Steuern derselben
DE102004002587B4 (de) * 2004-01-16 2006-06-01 Novaled Gmbh Bildelement für eine Aktiv-Matrix-Anzeige
US20070252126A1 (en) * 2004-03-15 2007-11-01 Haruo Kawakami Driver and Drive Method for Organic Bistable Electrical Device and Organic Led Display
TWI302644B (en) * 2004-09-29 2008-11-01 Seiko Epson Corp Electro-optical device, image forming apparatus, and image reader
JP2006330469A (ja) * 2005-05-27 2006-12-07 Fujifilm Holdings Corp 有機エレクトロルミネッセンス表示装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6147451A (en) * 1997-08-08 2000-11-14 Sanyo Electric Co., Ltd. Organic electrominiscent display device
JP2001130048A (ja) * 1999-11-08 2001-05-15 Canon Inc 発光装置およびそれを用いた露光装置、記録装置
EP1164641A2 (fr) * 2000-06-12 2001-12-19 Semiconductor Energy Laboratory Co., Ltd. Module à émission de lumière, sa méthode de commande et capteur optique
EP1227468A2 (fr) * 2001-01-30 2002-07-31 Eastman Kodak Company Méthode de integration de système de commande et de dispositifs d'affichage sur un substrat commun
EP1482572A1 (fr) * 2003-05-29 2004-12-01 Sony Corporation Procédé de fabrication d'une structure laminée, structure laminée, dispositif d'affichage et unité d'affichage avec structure laminée
US20060228974A1 (en) * 2005-03-31 2006-10-12 Theiss Steven D Methods of making displays

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101887904B (zh) * 2009-05-15 2013-02-06 上海天马微电子有限公司 集成触摸屏的有机发光二极管显示器

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