WO2016146438A1 - Procédé de fabrication d'un composant opto-électronique - Google Patents

Procédé de fabrication d'un composant opto-électronique Download PDF

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Publication number
WO2016146438A1
WO2016146438A1 PCT/EP2016/054923 EP2016054923W WO2016146438A1 WO 2016146438 A1 WO2016146438 A1 WO 2016146438A1 EP 2016054923 W EP2016054923 W EP 2016054923W WO 2016146438 A1 WO2016146438 A1 WO 2016146438A1
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WO
WIPO (PCT)
Prior art keywords
layer
region
substrate
optically functional
adhesion
Prior art date
Application number
PCT/EP2016/054923
Other languages
German (de)
English (en)
Inventor
Nina Riegel
Daniel Riedel
Thomas Wehlus
Silke SCHARNER
Johannes Rosenberger
Arne FLEISSNER
Original Assignee
Osram Oled Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Oled Gmbh filed Critical Osram Oled Gmbh
Publication of WO2016146438A1 publication Critical patent/WO2016146438A1/fr

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/221—Changing the shape of the active layer in the devices, e.g. patterning by lift-off techniques

Definitions

  • the invention relates to a method for producing an optoelectronic component.
  • organic semiconductors also referred to as organic layers
  • OLEDs organic light-emitting diodes
  • OLEDs organic light-emitting diodes
  • An OLED can consist of a multiplicity of organic layers which
  • a support can also be used as a substrate
  • the structuring is limited by the shape of the shadow masks, e.g. can be specific
  • Patterning patterns are difficult to realize, e.g. if individual isolated areas should be shaded. Are the organic layers of a solution
  • Photolithography used in the organic semiconductors with photoresist function also called photoresist function
  • certain solvents can either be improved by exposure (also known as positive or positive resist) or worsened (also referred to as negative or negative resist).
  • the organic layers can be rendered soluble or insoluble in predefined regions. After exposure, the entire organic layer is rinsed with the solvent and the soluble areas washed away.
  • the solvent used can, however, leave residues or attack other already existing layers, e.g. replace, to protect existing layers, they can be networked together.
  • a method which is residue-free Back structuring of organic layers allows.
  • Embodiments form one or more organic layer (s) for an OLED structured. This makes it possible, for example, for contact areas of the OLED to remain free or to be exposed. Thus, an organic layer can be formed, which defines a defined
  • the organic layers may be used in planar organic layers, such as in some active matrix displays or in light sources for illuminating premises or
  • an optoelectronic device comprising forming an adhesion structure over a substrate, the substrate having a first region and a second region, forming an optically functional layer structure over the first region and the second region, wherein the adhesion structure is or is formed in that a first adhesion of the optically functional layer structure to the first region (of the substrate) is greater than a second adhesion of the optical one
  • a method of fabricating an optoelectronic device may include forming an adhesion structure over a substrate, wherein the substrate may include a first region and a second region; Forming an optically functional layer structure over the first region and the second region; wherein the adhesive structure is or becomes such that a first adhesion of the optically functional layer structure to the first region ⁇ of the substrate) is greater than a second adhesion of the optical
  • a method of fabricating an optoelectronic device may include forming an adhesion structure over a substrate, wherein the substrate may include a first region and a second region; Forming an optically functional layer structure over the first region and the second region; wherein the adhesive structure is or becomes such that a first adhesion of the optically functional layer structure to the first region (of the substrate) is greater than a second adhesion of the optical element
  • the optical detector According to various embodiments, the optical detector
  • Layer also referred to as organic layer
  • organic layer e.g. several organic layers.
  • Forming an optically functional layer structure over the first region and the second region may, according to various embodiments, comprise forming the optically functional layer structure over the entire surface of the substrate, e.g. to apply or to dismiss.
  • the substrate may be a main processing surface
  • the optical detector According to various embodiments, the optical detector
  • the first adhesion may also be referred to as a first adhesion mediation between the optically functional layer structure and the first region of the substrate
  • the second adhesion may also be referred to as a second adhesion mediation between the optically functional layer structure and the second region of the substrate are understood.
  • the adhesive structure acts as a primer, that is, as a connector or compound which is the optically functional
  • Layer structure connects to the substrate and which a first adhesion mediation between the optically functional layer structure and the first region of the substrate greater than a second adhesion between the optical
  • the adhesive structure may comprise an anti-adhesion layer formed over the second region.
  • the non-stick layer may have the adhesiveness of the optically functional layer structure z to the second
  • Anti-stick layer act as a poor Haftvermit ler, which bad adheres to the substrate and / or schiecht to the optically functional layer structure.
  • the first region and / or the adhesion layer may be electrically conductive (ie, an electrical conductivity greater than about 10 s
  • Siemens per meter e.g. greater than approx
  • the adhesive structure may comprise an anti-adhesion layer formed over the second region, which upon removal of the part of the optical
  • the adhesive structure may comprise an anti-adhesion layer formed over the second region, which on removal of the part of the optically functional layer structure at the part of the optically functional
  • the adhesive structure may be configured such that an adhesion of the optical functional layer structure to the release layer is greater than an adhesion of the release layer to the substrate.
  • the anti-adhesion layer is removed from the substrate when the optical functional layer structure is removed over the second region of the substrate.
  • the adhesive structure may be configured such that an adhesion of the optically unctional layer structure to the release layer is smaller than an adhesion of the release layer to the substrate.
  • the release layer may remain on or over the substrate when the optically functional layer structure is removed over the second region of the substrate.
  • the release layer may provide a second adhesion mediation between the optically functional layer structure and the second region of the substrate, which is smaller than a first adhesion mediation between the optically functional layer structure and the first region of the substrate.
  • the ⁇ is a ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇
  • Non-stick layer have a perfluorinated polymer, e.g. Polytetrafluoroethylene.
  • the non-stick layer may comprise at least one or more of the following materials: perfluorinated
  • the anti-sticking agent may have a layer thickness in a range of about 5 nm to about 1 pm, for example in a range of about 10 nm to about 0.5 ⁇ , for example in a range of about 50 nm to about 0.1 ⁇ .
  • the ⁇ is a ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇
  • Non-stick layer a self-organizing monolayer (also referred to as SAM).
  • the release layer may be or may be formed from a material that is formed on or over the substrate
  • a monolayer can be understood as a thin layer with the thickness (layer thickness) of a single layer of molecules or atoms. The bigger the
  • the monolayer (also referred to as monolayer) may have a layer thickness in the range of about 0.1 nm to about 10 nm.
  • the optically functional layer structure may, for example, be in direct contact with the substrate over the second region of the substrate. In other words, it can according to
  • Non-stick coating required.
  • Layer structure may be defined with the second region of the substrate, for example, of the surface of the substrate, for example of a roughness or surface texture (also referred to as surface structure) of the substrate
  • a roughness or surface texture also referred to as surface structure
  • the adhesive structure may include an adhesive layer formed over the first region
  • the adhesive layer may define the adhesion of the optically functional layer structure to the first region of the substrate.
  • the adhesive layer can act as a good adhesion promoter, which adheres well to the substrate and / or well to the optically functional layer structure.
  • the adhesive layer may comprise a first adhesion mediation between the optically functional layer structure and the first
  • the adhesive layer may be used as an electrode, e.g. as the lower electrode, which electrically contacts the optically functional layer structure, as described below.
  • the adhesive strength can be used as a measure of the resistance of a coating to its mechanical separation be understood from the underground.
  • Many of the foregoing materials also provide improved wettability of the surface for subsequent layers.
  • an adhesive layer ie, a substrate
  • the adhesive layer may have a layer thickness in the range of about 5 nm to about 10 ⁇ , e.g. in a range of about 10 nm to about 5 ⁇ ⁇ , e.g. in a range of about 50 nm to about 1 ⁇ , e.g. in a range of about 100 nm to about 0.5 pm.
  • the adhesive structure over the first region may have a recess exposing the substrate.
  • Adhesive layer needed.
  • Layer structure may be defined with the first region of the substrate, e.g. from the surface of the substrate, e.g. from a roughness or surface texture of the
  • the adhesive structure may include a first region ⁇ e.g. over the first area of the
  • Substrate and a second region (e.g., over the second region of the substrate) and configured to provide adhesion of the first region of the substrate
  • Adhesive structure to the optically functional layer structure and / or to the substrate is greater than an adhesion of the second region of the adhesion structure to the optically functional layer structure and / or to the substrate.
  • the first region of the adhesive structure may be formed as an adhesive layer and the second region of the adhesive structure may be formed as an anti-adhesion layer or as a recess in the adhesive structure (eg in the adhesive layer).
  • the second region of the adhesive structure may be formed as an anti-adhesion layer and the first region of the adhesive structure may be formed as a recess in the adhesive structure (eg in the anti-adhesion layer).
  • the adhesion of the optically functional layer structure to the adhesion structure may or may not be defined by the surface energy of the adhesion structure.
  • the surface energy of the anti-adhesion layer may be lower
  • Adhesive layer For example, the surface energy of the non-stick layer may be set lower than the
  • the surface energy of the substrate e.g. if no adhesive layer is used.
  • the surface energy of the adhesive layer may be set larger than the
  • Non-stick layer is used.
  • the force-imparting layer may have sufficient adhesiveness to the optically functional layer structure such that a portion of the optically functional layer structure adheres to it as the force-transmitting layer is moved away from the substrate and the portion of the optically-functional layer structure is removed from the substrate ,
  • an adhesion of the force-transmitting layer z of the optically functional layer structure may be smaller than the first adhesion and greater than the second adhesion.
  • a sacrificial layer may be formed between the force-transmitting layer and the optically functional layer structure, wherein an adhesion of the sacrificial layer to the optically-functional layer structure is smaller than the first adhesion and larger than the second
  • the sacrificial layer can be a detachment of the sacrificial layer
  • Layer structure can be detached, for example, over the first area.
  • the sacrificial layer is removed, i. this is sacrificed to the optically functional layered structure over the first
  • Sacrificial layer consumed e.g. destroyed, i. the sacrificial layer absorbs the damage without passing it on to the optically functional layer structure.
  • the sacrificial layer can be used if the adhesion of the force-transmitting layer to the optically functional layer structure is greater than that
  • the sacrificial layer can define the adhesion of the force-transmitting layer to the optically-functional layer structure.
  • a material from which the sacrificial layer is formed may become the adhesiveness of the material
  • the sacrificial layer may comprise at least one or more of the following materials: a metal (e.g., the sacrificial layer may be formed in the form of a metallic layer), e.g. Aluminum or magnesium, perfluorinated polyolefins, or surface-modified
  • the sacrificial layer may have a layer thickness in a range of about 10 nm to about 10 ⁇ m, e.g. in a range of about 20 nm to about 5 ⁇ , e.g. in a range of about 50 nm to about 1 ⁇ , e.g. in a range of about 100 nm to about 0.5 ⁇ m.
  • an adhesion of the sacrificial layer to the force-transfer layer may be greater than an adhesion of the sacrificial layer to the optical layer
  • the sacrificial layer can thus be an adhesion of the sacrificial layer
  • Adjust layer structure e.g. reduce, e.g.
  • an optoelectronic device may include: a
  • an adhesive structure arranged above the substrate, which has at least a first region and a second region
  • Has area an optically functional layer structure arranged above the adhesion structure, which is suitable for converting electrical energy into electromagnetic radiation or for converting electromagnetic radiation into
  • electrical energy is set up, wherein the adhesive structure is set up such that an adhesion of the first
  • Area to the optically functional layer structure or to the substrate is greater than an adhesion of the second region to the optically functional layer structure or to the substrate.
  • optoelectronic component comprising: a
  • Substrate having at least a first region and a second region, which along a path
  • Adhesive structure an optically functional layer structure disposed over the adhesive structure configured to convert electrical energy to electromagnetic radiation or to convert electromagnetic radiation to electrical energy, the second region being free of the optically functional layer structure; and wherein the optically functional layer structure over the path has a separation region in which the optically functional layer structure is severed and has an irregular contour (or surface structure).
  • Layer structure of the optoelectronic component may be configured as described herein.
  • the optically functional layer structure also called active organic
  • the optoelectronic device may additionally comprise at least one further layer, e.g. a layer formed as an electrode, a
  • Optoelectronic device may alternatively comprise several further layers, as mentioned above, e.g. i have combination with each other.
  • the optically functional layer structure may comprise a plurality of organic layers which are stacked on top of one another and form a so-called layer stack. For example, more than three, more than four, more than five, more than six, more than seven, more than eight, or more than nine layers may be formed on top of each other, e.g. more than ten, e.g. more than twenty layers.
  • a layer e.g. an organic layer, a layer of the optically functional layer structure, a layer of the adhesion structure and / or a layer of an organic optoelectronic component
  • liquid phase processing may be carried out on iron to dissolve or disperse a substance for the layer (eg, for an organic layer, a metallic layer or eg a ceramic layer) in a suitable solvent, for example in a polar solvent such as water, dichlorobenzene, tetrahydrofuran and phenetole , or
  • a non-polar solvent such as toluene or other organic solvents
  • fluorine-based solvent also called perfluorinated Solvent
  • Two solvents are orthogonal to each other when one is polar and the other is nonpolar. Substances that dissolve in a polar solvent are mostly nonpolar
  • Solvents are considered complementary, they can have a low dipole moment and still dissolve substances that are more soluble in polar solvents.
  • liquid phase processing the liquid phase of the layer by liquid phase deposition (also known as
  • wet-chemical or wet-chemical coating on or over a surface to be coated (e.g., on or over the substrate, or on or over another layer of the organic optoelectronic device), e.g. apply.
  • the liquid phase processing may vary according to various conditions
  • the mask may have a pattern that defines a surface that is being coated.
  • the pattern may be formed by means of one or more passage openings in the mask, e.g. in a plate, be formed. Through the passageway, the solution (i.e., the liquid phase) of the layer may reach or over the area to be coated.
  • the shape of the pattern may or may not be imaged on the coated surface such that the coated surface has the shape of the pattern.
  • the mask may for example be part of the coating device.
  • the liquid phase processing may be done with a nozzle defining the area at which
  • Liquid phase reaches or over the substrate.
  • the nozzle may be moved across the substrate according to a predefined path so that the liquid phase is applied along or over the substrate along the path and a coated area in the form of the path is created. If a contiguous and closed area is to be coated, adjacent sections of the path may lie so close to one another that newly applied liquid phase comes into contact with and is mixed with already applied liquid phase.
  • the formation of a layer can take place by means of a vacuum processing.
  • Vacuum processing may include a layer (e.g., an organic layer, a metallic layer, and / or a ceramic layer) using one or more of the
  • ALD Atomic Layer Deposition
  • sputtering thermal vapor deposition
  • PEALD Plasma Enhanced Atomic Layer Deposition
  • PALD plasma-less Atomic Layer Deposition
  • CVD plasma-assisted plasma-assisted plasma-assisted plasma-assisted plasma-assisted plasma-assisted plasma-assisted plasma-assisted plasma-assisted plasma-assisted plasma-assisted plasma-assisted plasma-assisted plasma-assisted plasma-assisted plasma-assisted plasma-assisted plasma-assisted plasma-assisted plasma-assisted plasma-assisted plasma-assisted plasma-assisted plasma-assisted plasma-assisted plasma-assisted plasma-assisted plasma-assisted plasma-assisted plasma-assisted plasma-assisted plasma-assisted plasma-assisted plasma-assisted plasma-assisted plasma-assisted plasma-assisted plasma-assisted plasma-assisted plasma-assisted plasma-assisted plasma-assisted plasma-assisted plasma-assisted plasma-assisted plasma-assisted plasma-assisted plasma-assisted plasma-assisted plasma-assisted plasma-
  • PECVD Plasma Enhanced Chemical Vapor Deposition
  • the formation of at least some layers by means of vacuum processing and other layers by liquid phase processing ie by means of so-called hybrid processing, wherein at least one layer (eg, three or more layers) from a solution (ie, as a liquid phase) and the remaining layers in Vacuum be processed.
  • the formation of a layer can take place in a processing chamber, for example in a vacuum processing chamber or a liquid-phase processing chamber.
  • One or more layers e.g. organic layers of the organic optoelectronic device can be crosslinked with each other, e.g. after they are formed.
  • a large number of individual molecules of the layers can be linked together to form a three-dimensional network. This can be the consistency of the organic
  • Optoelectronic component to be understood as a device that by means of a semiconductor device
  • the electromagnetic radiation may be, for example, light in the visible range, UV light and / or infrared light, e.g. Light of a color valence.
  • LED light emitting diode
  • OLED organic light-emitting diode
  • an organic optoelectronic device may be electromagnetic
  • Radiation absorbing device may be formed or be, for. as a light-absorbing diode or transistor, for example as a photodiode or as a solar cell.
  • the organic optoelectronic component can in
  • electromagnetic radiation absorbing components may be provided, for example, arranged on or above a common carrier (may also be referred to as a substrate) and / or accommodated in a common housing.
  • a common carrier may also be referred to as a substrate
  • a common housing may also be referred to as a substrate
  • a plurality of electromagnetic radiation emitting devices may interact with each other, e.g. create overlapping light and
  • an organic optoelectronic device may comprise at least one organic
  • Optoelectronic device also one or more
  • the optoelectronic component may have a contact structure which electrically contacts the first region and / or the adhesion layer.
  • the contact structure may have at least one (eg one or two or more than two) contact pads and / or at least one (eg one or two or more than two) electrical leads (eg, trace) comprising the first region and / or the adhesion layer electrically
  • a compound in the sense of a substance may include
  • Substance can be understood from two or more different chemical elements, which in a chemical bond
  • a metal may comprise at least one metallic element, e.g. Copper (Cu), silver (Ag), platinum (Pt), gold (Au), magnesium (Mg), aluminum (AI), barium (Ba), indium ⁇ In), calcium (Ca), samarium (Sm) or Lithium (Li).
  • a metal may comprise a metal compound (e.g., an intermetallic compound or an alloy), e.g. a connection of at least two
  • metallic elements e.g. Bronze or brass, or e.g. a compound of at least one metallic element and at least one non-metallic element, e.g.
  • an organic layer can be understood as a layer which comprises or is formed from an organic material.
  • an inorganic layer is understood as a layer comprising or formed of an inorganic material.
  • a metallic layer can be understood as a layer which is a metal
  • adhesion of a first component to a second component can be understood as the force necessary to release the first component from the second component.
  • the adhesion can also be considered
  • Adhesion coefficient e.g. between the first component and the second component.
  • Component to the second component can be measured by a force is transmitted to the first component while the second component is fxiert, the force is directed away from the second component, e.g. from the second component to the first component.
  • Haf fortune then corresponds to the force at which the first component of the second component dissolves.
  • the detention can be analogous to the maximum
  • a compound e.g., a primer
  • first component e.g. breaks or tears (also called maximum tensile strength).
  • Adhesion may also be described as stress, i. Power per
  • the force at which the first component separates from the second component may be normalized to the area at which the first component contacts the second component, ie Interface between the first component and the second component.
  • Figure 1 is a schematic flow diagram of a method for
  • Figure 2A is a cross-sectional view of an optoelectronic
  • Figure 2B is a plan view of that shown in Figure 2A
  • FIGS. 2C to 2E each show a cross-sectional view of an optoelectronic component i of a method for producing an optoelectronic component
  • FIG. 3A to FIG. 3C each show a cross-sectional view of an optoelectronic component in a method for
  • 4A to 4C each show a cross-sectional view of an optoelectronic component in a method for producing an optoelectronic component
  • FIGS. 5A to 5C each show a cross-sectional view of an optoelectronic component in a method for producing an optoelectronic component
  • 6A and 6B each show a cross-sectional view of an optoelectronic component in a method for producing an optoelectronic component
  • 7A and 7B each show a cross-sectional view of an optoelectronic component in a method for producing an optoelectronic component
  • Figure 8C is a detail view of that shown in Figure 8B
  • Figure 8D is a cross-sectional view of an opto-electronic
  • the term “about” can be understood in connection with the formation of a layer, such that a layer formed over a surface (eg a support) or a component (eg a support) is in direct physical contact with the surface or the component is or will be formed.
  • the term “via” can be understood as meaning that one or more further layers are arranged between the layer and the component.
  • FIG. 1 illustrates a schematic flow diagram of a method 100 for producing an optoelectronic
  • the method 100 includes, in 102, forming an adhesion structure over a substrate, the substrate having a first region and a second region. Furthermore, the method 100 i 104 on an optically funk ionelle
  • the method 100 includes removing a portion of the optically functional layer structure over the second region by removing one from the substrate
  • FIGS. 2A to 2E each illustrate
  • Embodiments in a method according to various embodiments for producing an optoelectronic component are described in detail in various embodiments for producing an optoelectronic component.
  • FIG. 2A illustrates an optoelectronic component 200a in a cross-sectional view
  • FIG. 2B illustrates the optoelectronic component 200a in a plan view.
  • the ⁇ is a ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇
  • optoelectronic devices 200a have a substrate 302, e.g. in the form of a foil or plate, which may have a first region 302a and a second region 302b.
  • the first region 302a may be disposed adjacent to the second region 302b.
  • the first area 302a may be the second
  • the first region 302a may be the second region 302b only partially lateral (e.g.
  • the second region 302b may surround the first region 302a laterally (e.g., laterally) (not
  • the second region 302b may include the first region 302a only partially lateral (e.g.
  • the substrate 302 may include a first region 302a or multiple first regions 302a exhibit. Alternatively or additionally, the substrate 302 may include a second region 302b or a plurality of second regions 302b. For example, a contiguous first region 302a may at least partially laterally surround a plurality of second regions 302b. Alternatively or additionally, a contiguous second region 302b can surround a plurality of first regions 302a at least partially laterally.
  • the first area 302a may, for example, define a luminous area of the organic optoelectronic component 200a, from which the organic optoelectronic component 200a emits light.
  • the organic optoelectronic component 200a may have or form a luminous area over the first area 302a.
  • the second area 302b may be, for example, a
  • the organic optoelectronic component 200a is electrically contacted.
  • the organic optoelectronic component 200a may have a second region 302b above the second region 302b
  • FIG. 2C illustrates an optoelectronic device 200c in a cross-sectional view.
  • the optoelectronic component 200c illustrated in FIG. 2C largely corresponds to the optoelectronic component 200a shown in FIG. 2A, wherein an adhesion structure 202 having an anti-adhesion layer 202a is formed on the substrate 302.
  • the release layer 202a may be disposed over the second portion 302b of the substrate 302, e.g. such that the first region 302a of the substrate 302 is free of the release layer 202a.
  • the ⁇ is a ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇
  • Non-stick layer 202a may be formed by liquid phase processing or vacuum processing.
  • the release layer 202a may or may not be applied to or over the substrate 302 and
  • the first region 302a of the substrate 302 can be exposed.
  • the exposure of the first area 302a can be done, for example, by a
  • Recess e.g. in the form of a through-hole 202d, in the adhesive structure 202, e.g. is formed in the non-stick layer 202a or is.
  • the recess may at least partially expose the substrate 302.
  • the substrate 302 may be sandwiched by a mask, e.g. a shadow mask or stencil, selectively (e.g.
  • FIG. 2D illustrates an optoelectronic device 20 Od in a cross-sectional view.
  • the optoelectronic component 200d shown in FIG. 2D largely corresponds to the optoelectronic component 200a shown in FIG. 2A, wherein on or above the substrate 302, an adhesive structure 202 is formed with an adhesive layer 202h.
  • the adhesive layer 202h may be disposed over the first region 302a of the substrate 302 or may be formed, e.g. such that the second area 302a of the substrate 302 is free of the
  • Adhesive layer 202h Adhesive layer 202h.
  • the adhesion layer 202h may be provided by means of liquid phase processing or a
  • Vacuum processing be or be.
  • the adhesion layer 202h may be applied to or over the substrate 302 (eg, entirely or at least partially over the first region 302b of the substrate 302 and the second region 302b of the substrate 302) and subsequently removed from the second region 302b of the substrate 302
  • the second region 302b of the substrate 302 can be exposed
  • Exposing of the second area 302b may be done, for example, by leaving a recess, e.g. in form of a
  • the substrate 302 may be masked, e.g. a shadow mask or stencil, selectively (e.g.
  • FIG. 2E illustrates an optoelectronic device 200e in a cross-sectional view.
  • the optoelectronic component 20 Oe shown in FIG. 2E largely corresponds to the optoelectronic component 200a shown in FIG. 2A, wherein an adhesion structure 202 having an adhesion layer 202h and an anti-adhesion layer 202a is formed on or above the substrate 302.
  • the adhesion structure 202 illustrated in FIG. 2E can be formed, for example, by forming the optoelectronic component 200c shown in FIG.
  • Non-stick splint 202a the adhesive layer 202h is or will be formed over the first region 302a of the substrate 302.
  • Adhesive structure 202 may be at least partially filled with the adhesive layer 202h, or the adhesive layer 202h may be selectively formed. Alternatively or additionally, the adhesive layer 202h may be at least partially over the
  • Non-stick layer 202a may be formed (e.g.
  • Non-stick layer 202a is exposed.
  • the adhesion structure 202 shown in FIG. 2E may be formed, for example, by using the structure shown in FIG.
  • illustrated optoelectronic device 200d is formed, wherein after the formation of the adhesive layer 202h the
  • Anti-adhesive layer 202a over the second portion 302b of the
  • Substrate 302 is or will be formed.
  • Adhesive structure 202 may or may not be filled with the release layer 202a, or the release layer 202a may be or may be selectively formed. Alternatively or additionally, the release layer 202a may be at least partially over the
  • Adhesive layer 202h may be formed (e.g., over the entire surface of substrate 302) and then removed over adhesive layer 202h so that adhesive layer 202h is exposed.
  • Fig. 3A illustrates a sectional view of a
  • organic optoelectronic device 300a according to various embodiments in a method 100 according to various embodiments for producing the organic optoelectronic device 300a.
  • the formation of the organic optoelectronic component 300a includes forming a first electrode 310, forming an organic functional layer structure 312, and forming a second electrode 314, which together form or form part of an active region 306.
  • the active region 306 is an electrically active region 306 and / or an optically active region 306.
  • the active region 306 is, for example, the region of the organic
  • Optoelectronic device 300a in which an electric current flows and an electromagnetic radiation is generated and / or an electric current is generated and in which an electromagnetic radiation is absorbed.
  • the organic light emitting diode 306 is also known as a luminous thin film device of organic semiconducting
  • electromagnetic radiation e.g., light
  • electromagnetic radiation e.g., light
  • Electrode 314 an electric current for the operation of
  • organic optoelectronic device 300a flows through the organic functional layer structure 312 therethrough.
  • the generated electromagnetic radiation can be at least through some layers and components of the organic
  • the organic optoelectronic device 300a is configured to convert electrical energy into electromagnetic radiation (eg, light).
  • the first electrode 310 and / or the second electrode 314 are formed such that they have at least one layer.
  • the first electrode 310 and / or the second electrode 314 are formed such that they have at least one layer.
  • Electrode 314 may be formed to have a layer thickness in a range of about 1 nm to about 50 nm, for example less than or equal to about 50 nm, for example a layer thickness of less than or equal to about 45 nm, for example a layer thickness of less than or equal to about 40 nm,
  • a layer thickness of less than or equal to approximately 35 nm for example a layer thickness of less than or equal to approximately 30 nm, for example a layer thickness of less than or equal to approximately 25 nm, for example a layer thickness of less than or equal to approximately 20 nm,
  • a layer thickness of less than or equal to about 15 nm for example, a layer thickness of less than or equal to about 10 nm.
  • the first electrode 310 is formed on or above the substrate 302, the first electrode 310 is formed.
  • the first electrode 310 which is also referred to below as lower electrode 310 or as bottom contact 310
  • the first electrode 310 is designated, is formed of an electrically conductive material.
  • the first electrode 310 is formed as an anode, ie as a hole-injecting electrode.
  • the first electrode 310 is formed to have a first electrical contact pad (not shown), wherein a first electrical potential (provided by a power source (not shown), such as a power source or a voltage source) may be applied to the first electrical contact pad.
  • a power source not shown
  • the first electrode 310 may be used for
  • the first electrical contact pad also called Heidelberg ists
  • the first electrical potential may be the ground potential or another predetermined reference potential.
  • the first ⁇ is the first ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇
  • Electrode 310 may be part of the adhesive structure 202, e.g.
  • the adhesive layer 202h may be formed in the form of an electrode 310 or may be part of the electrode 310.
  • the first electrode 310 may be formed on or over the adhesion structure 202.
  • the organic functional layer structure 312 is formed.
  • the formation of the organic functional layer structure 312 comprises forming an emitter layer 318, for example with fluorescent and / or phosphorescent emitters.
  • an emitter layer 318 for example with fluorescent and / or phosphorescent emitters.
  • the second electrode 314 is formed.
  • the second electrode 314 is used as a cathode, ie as a
  • the second electrode 314 has a second electrical terminal (in other words, a second electrical contact pad) for applying a second electrical potential (which is different from the first electrical potential) provided by the power source.
  • the second electrode 314 for applying a second potential may be electrically conductively connected to a second electrical contact pad.
  • the second electrical contact pad can be set up for electrically conductive contacting, for example for bonding or soldering.
  • the second electrical potential may be a potential different from the first electrical potential.
  • the first electrical potential and the second electrical potential may be used to operate the organic
  • the power source e.g., a power source such as a power supply or a power source
  • the first electrical potential and the second electrical potential may be an electric current
  • the second electrical potential has a value such that the difference to the first electrical potential (in other words, the voltage applied to the organic
  • opto-electronic device 300a has a value in a range of about 1.5V to about 20V
  • the power source may be configured to generate this voltage.
  • the substrate 302 may be provided as a one-piece substrate 302.
  • the substrate 302 may be considered a
  • the substrate 302 may have various shapes.
  • the substrate 302 may be in the form of a foil (e.g., a metallic foil or a plastic foil), as one
  • Plate eg a plastic plate, a glass plate or a metal plate
  • the substrate 302 may be prismatic, trapezoidal,
  • the substrate 302 may comprise at least one flat or at least one curved surface, e.g. a main processing surface on a main processing side of the substrate 302, on or above which the
  • Layers of the organic optoelectronic device 300a are formed.
  • the substrate 302 may be formed of an electrically insulating material.
  • the substrate 302 may be formed of glass or may comprise a glass.
  • the substrate 302 may be formed of a plastic or a composite material (e.g., a laminate of multiple foils or a fiber-plastic composite).
  • the plastic comprises or is formed from one or more polyolefins (eg, high or low density polyethylene or PE) or polypropylene (PP).
  • PE polyolefins
  • PP polypropylene
  • the plastic may be polyvinyl chloride (PVC), polystyrene (PS), polyester and / or polycarbonate ⁇ PC),
  • the substrate 302 may be formed such that it has one or more of the above-mentioned substances.
  • the substrate 302 may be a quartz and / or a semiconductor material or
  • the substrate 302 may be electrically conductive.
  • the substrate 302 may be made of an electrically insulating material as above
  • Coating may be formed, wherein the electrically conductive coating, e.g. may be a metallic coating comprising or formed from a metal.
  • the substrate 302 may comprise or be formed of an electrically conductive material, an electrically conductive polymer, a metal, a transition metal oxide or an electrically conductive transparent oxide.
  • a substrate 302 comprising or made of a metal may be used as a metal foil or a metal foil
  • the substrate 302 may be formed metal-coated film.
  • the substrate 302 may be configured to operate during operation of the
  • organic optoelectronic device 300a conducts electrical current.
  • the substrate 302 may be used as an electrode, e.g. serve as the lower electrode 310, the organic light emitting diode.
  • an electrode e.g. serve as the lower electrode 310, the organic light emitting diode.
  • Substrate 302 which can be coated on all sides
  • the substrate 302 may be formed of or include a high thermal conductivity material.
  • the substrate 302 may be opaque, translucent or even transparent with respect to at least one wavelength range of the electromagnetic radiation, for example in at least one region of the visible light, for example in one
  • Wavelength range from about 380 nm to 780 nm.
  • the substrate 302 is as
  • Waveguide designed for electromagnetic radiation for example, it is transparent or translucent with respect to the emitted or absorbed electromagnetic radiation of the organic
  • the substrate 302 is part of or forms a mirror structure.
  • the substrate 302 has a mechanically rigid area and / or a mechanical one
  • optoelectronic component 300a be configured as described below.
  • the first electrode 310 may be used as a layer stack
  • the first electrical potential is or is applied to the substrate 302 and is then indirectly applied (in other words transmitted) to the first electrode 310, e.g. when the substrate 302 is electrically conductive.
  • an electrical contact pad may have a plurality of electrical contact pads.
  • the first electrode 310 may be or may be formed of a metal. In the case that the first electrode 310 includes or is formed of a metal, the first electrode 310 may have a layer thickness
  • a layer thickness of less than or equal to about 20 nm for example, a layer thickness of less than or equal to about 18 nm.
  • the first electrode 310 may be formed or having a layer thickness of greater than or equal to about 10 nm, for example Layer thickness of greater than or equal to about 15 nm.
  • the first electrode 310 may be formed or having a layer thickness of greater than or equal to about 10 nm, for example Layer thickness of greater than or equal to about 15 nm.
  • Electrode 310 may be formed so as to have a layer thickness in a range of about 10 nm to about 25 nm, for example in a range of about 10 n to about 18 nm, for example in a range of about 15 nm to about 18 nm .
  • the first electrode 310 may be or may be made translucent or transparent.
  • the first electrode 310 may include or may be formed from a conductive conductive oxide (TCO).
  • TCO conductive conductive oxide
  • Transparent conductive oxides are transparent, conductive substances, for example metal oxides, such as, for example, zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide, or indium tin oxide (ITO).
  • binary metal oxygen compounds such as ZnO, SnOa, or In 2 03 also include ternary metal oxygen compounds such as AIZnO, Zn 2 Sn0 4 , CdSnOa, ZnSn0 3 , Mgln 2 0 4 , Galn0 3 , Zn 2 In 2 0 5 or In 4 Sn 3 0i 2 or mixtures of different transparent conductive oxides to the group of TCOs.
  • the TCOs do not necessarily correspond to a stoichiometric composition and may furthermore be p-doped or n-doped, or hole-conducting (p-TCO) or electron-conducting (n-TCO).
  • the first electrode 310 may have a layer thickness in a range of about 50 nm to about 500 nm, for example, a layer thickness in a range from about 75 nm to about 250 nm, for example, a layer thickness in a range of
  • the first electrode 310 may be formed by a stack of layers or a combination of a layer of a metal on or over a layer of a TCO be or become, or vice versa.
  • An example is one
  • the first electrode 310 may comprise or be formed from a layer stack of several layers of the same metal or different metals and / or the same TCO or different TCOs.
  • forming the organic functional layer structure 312 may include forming one or more emitter layers 318.
  • Emitter layers 318 may, for example, be the same or different from each other.
  • the emitter materials may be embedded in a suitable manner in a matrix material. It should be noted that other suitable materials
  • Emitter materials can also be provided.
  • device 300a may be selected such that organic optoelectronic device 300a emits white light.
  • Emitter layer (s) 318 several different colors (for
  • Example, blue and yellow or blue, green and red) emitting emitter materials alternatively is / are the
  • Emitter layer (s) 318 also constructed of several sub-layers, such as a blue fluorescent emitter layer 318 or blue phosphorescent emitter layer 318, a green phosphorescent emitter layer 318 and / or a red phosphorescent emitter layer 318. By mixing the different colors, the emission of light can result in a white color impression. Alternatively it is
  • the second electrode 314 may be formed like the first electrode 310 or the second electrode 314 may be generally similar to the first electrode 310
  • the second electrode 314 may be in accordance with one or more of those described above
  • Embodiments of the first electrode 310 may or may not be formed.
  • the second electrode 314 may be formed.
  • the second electrode 314 is designed as an anode, ie as a hole-injecting electrode.
  • the first electrode 310 and the second electrode 314 are both translucent or transparent.
  • the organic optoelectronic device 300a may be used as a top and bottom emitter (otherwise expressed as
  • FIG. 3 B illustrates a schematic cross-sectional view of an organic optoelectronic component 300 b according to various embodiments, for example
  • Embodiment corresponds. As an alternative to the layer sequence illustrated in FIG.
  • optoelectronic component 300b that in Fig. 3b have illustrated layer sequence, which in
  • the first electrode 310 is formed on or above the substrate 302, the first electrode 310 is formed. On or above the first electrode 310, a hole injection layer is formed (not shown). On or above the hole injection layer is a hole transport layer 316 (also referred to as hole line layer 316).
  • the emitter layer 318 is formed on or above the hole transport layer 316.
  • Electron transport layer 320 also referred to as
  • Electron conductive layer 3203 is on or above the
  • Emitter layer 318 is formed. On or above the
  • Electron transport layer 320 becomes a
  • Electron injection layer (not shown) is formed. On or above the electron injection layer, the second electrode 314 is formed.
  • Device 300b is not the one described above
  • one or more of the above-mentioned layers may be omitted.
  • the layer sequence can be or be formed in the reverse order.
  • two layers may be formed as one layer.
  • the hole injection layer may be formed to have a layer thickness in a range of about 10 nm to about 1000 nm, for example, in a range of about 30 nm to about 300 nm,
  • Component 300b have a plurality of hole injection layers.
  • the hole transport layer 316 may be formed to have a layer thickness in a range of about 5 nm to about 50 nm, for example, in a range of about 10 nm to about 30 nm, for example, about 20 nm.
  • the electron transport layer 320 may be formed to have a layer thickness in a range of about 5 nm to about 50 nm, for example, in a range of about 10 nm to about 30 nm, for example, about 20 nm.
  • the electron injection layer may be formed to have a layer thickness in a range of about 5 nm to about 200 nm, for example, in a range of about 20 nm to about 50 nm, for example, about 30 nm.
  • Device 300b multiple electron injection layers
  • Optoelectronic device 300b may be formed such that it has two or more organically functional layer structures 312, for example a first organically functional layer structure 312 (also referred to as the first organically functional layer structure units) and a second organically functional layer structure 312 (also referred to as the second organic functional
  • the second organic functional layered structure unit may be over or rubbed of the first functional one
  • Layer structure unit may be or be formed.
  • An interlayer structure (not shown) may or may be formed between the organic functional layered structure units,
  • the interlayer structure may be formed as an intermediate electrode, for example according to one of the configurations of the first electrode 310
  • Intermediate electrode may be electrically connected to an external power source.
  • the external energy source may provide a third electrical potential at the intermediate electrode.
  • the intermediate electrode can also have no external electrical connection, for example by the intermediate electrode having a floating electrical potential.
  • the interlayer structure may be used as a charge carrier pair generation layer structure
  • a charge carrier pair generation layer structure comprises one or more electron-conducting charge carrier pair generation layer (s) and one or more hole-conducting ones
  • Charge pair generation layer (s) on or is formed therefrom.
  • the electron-conducting charge carrier pair generation layer (s) and the hole-conducting charge carrier pair generation layer (s) are each formed of an intrinsically conducting substance or a dopant in a matrix.
  • the charge carrier pair generation layer structure should
  • the charge carrier pair generation layer (s) and the hole-conducting charge carrier pair generation layer (s) may be formed such that at the interface of an electron-conducting Charge pair generation layer with a hole-conducting carrier pair generation layer can be a separation of electron and hole.
  • the charge carrier pair generation layer structure may have a diffusion barrier between adjacent layers.
  • Layers may be formed as mixtures of two or more of the above layers.
  • one or more of the above-mentioned layers disposed between the first electrode 310 and the second electrode 314 are optional.
  • Layer structure 312 may be formed as a stack of two, three or four directly superimposed OLED units or be. In this case, the organic
  • functional layer structure 312 has a layer thickness of at most about 3 ⁇ .
  • organic optoelectronic component 300 b can be or be formed such that it optionally has further organic puncture layers (which can consist of organic functional materials),
  • the light emitting layer for example, disposed on or over the one or more emitter layers 318 or on or above the electron transport layer (s) 216 that serve to enhance the functionality and thus the efficiency of the light emitting layer
  • Fig. 3C illustrates a schematic cross-sectional view according to various embodiments of an organic
  • Optoelectronic device 300c for example, the largely illustrated in Fig. 3B
  • Embodiment corresponds.
  • the layer sequence illustrated can be organic
  • the barrier layer 304 may include or be formed from one or more of the following: alumina, zinc oxide, zirconia, titania, caffeine, tantalum, lanthania, silica, silicon nitride, Silicon oxynitride, indium tin oxide,
  • Indium zinc oxide aluminum-doped zinc oxide, poly (p-phenylene terephthalamide), nylon 66, and mixtures and alloys thereof.
  • the ⁇ is a ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇
  • barrier layer 304 may be formed of an electrically insulating material (i.e., an electrical insulator, a so-called insulating layer).
  • the barrier layer 304 may be formed to have a layer thickness of about 0.1 nm (one atomic layer) to about 1000 nm, for example, a layer thickness of about 10 nm to about 100 nm according to an embodiment, for example about 40 nm according to an embodiment.
  • the barrier layer 304 can by means of a
  • Vacuum processing a liquid phase processing or alternatively be formed by other suitable deposition methods or be.
  • the barrier layer 304 may be or may be configured to include a plurality of Partial layers has.
  • all partial layers for example. be formed by an atomic layer deposition method or be.
  • a layer sequence comprising only ALD layers may also be referred to as "nanolaminate".
  • the barrier layer 304 is formed such that it one or more optically
  • having high refractive index materials for example one or more high refractive index materials, for example having a refractive index of at least 2.
  • Layers are formed as mixtures of two or more of the above layers.
  • one of the herein may be
  • organic optoelectronic devices 300c have a color filter and / or a converter structure, which can be arranged above the substrate 302 and / or formed or can be. Through targeted variation of a
  • a targeted change in the emission in one direction can be achieved, independently of the emission in the other direction. This applies to non-transparent and (semi-) transparent
  • Barrier layer 304 may be part of the adhesive structure 202, e.g.
  • the adhesive layer 202h may be formed in the form of the barrier layer 304 or may be part of the barrier layer 304.
  • FIGS. 4A to 4C each illustrate one
  • the optoelectronic component 400a shown in FIG. 4A largely corresponds to that shown in FIG. 2E
  • Optoelectronic component 200e wherein on or above the adhesive structure 202, an optically functional layer structure 312 is formed.
  • Layer structure 312 may be formed over both first region 302a of substrate 302 and over second region 302b of substrate 302.
  • the adhesion structure 202 may be formed according to the optoelectronic component 200c illustrated in FIG. 2C or according to the optoelectronic component 200d illustrated in FIG. 2D.
  • the optoelectronic component 400b shown in FIG. 4B largely corresponds to that shown in FIG. 4A
  • Optoelectronic component 400a wherein on or above the optically functional layer structure 312 a
  • the power switching layer 402 may be at least partially e.g. by means of vacuum processing and / or by means of
  • Liquid phase processing may be formed or be.
  • K aftvaffstik 402 a Kunststoffs off, for example, a polymer-based plastic, such as epoxy resin, on or above the optically functional layer structure 312 form, for example, apply, for example, apply. Afterwards, eg afterwards, the plastic can harden and become with of the optically functional layer structure 312. The plastic so cured may then be sufficiently stable to transfer a force 602 to the optically functional layer structure 312, eg, as it is moved away from the substrate 302.
  • an adhesion promoter e.g. a viscous material
  • an adhesive e.g., a physically setting adhesive, chemically curing
  • Adhesive or a pressure-sensitive adhesive ⁇ Adhesive or a pressure-sensitive adhesive ⁇ , a polyolefinic adhesion promoter, an organometallic adhesion promoter or a silane coupling agent, on or above the optical bond
  • Force transmitting layer 402 a foil, e.g. a plastic film or metal foil, on or over the optically functional layer structure 312, e.g.
  • Adhesion promoters are applied, which already on or above the optically functional layer structure 312
  • the primer may be disposed on the film, e.g. be attached, or be and together with the film on the optically functional
  • Layer structure 312 applied, e.g. be pressed.
  • the force-transmitting layer 402 may be in the form of a self-adhesive film, e.g. as in the form of a
  • Adhesive tapes with acrylate adhesive applied to them,
  • the force-transmitting layer 402 is connected to the optically functional layer structure 312, it can be separated from the. Substrate 302 are moved away. In this case, a force 602, which is directed away from the substrate 302, can be transferred to the optically functional layer structure 312, such that the optically functional layer structure 312 in a separation region 312g, which lies between a first
  • functional layer structure 312 is severed, e.g. tears or breaks, and is partially removed from the substrate 302.
  • the force 602 may be e.g. evenly ⁇ e.g. full surface) to the optically functional layer structure 312 or serially, e.g. in sections, e.g. temporally and / or spatially one after the other.
  • the force-transmitting layer 402 may be torn off the organic optoelectronic device 400b from one side (e.g., an edge) of the substrate 302.
  • Layer structure 312 may be that part of optically functional layer structure 312 which is on or above the
  • Substrate 302 remains, and the second portion 312 b of the optically functional layer structure 312 may be the part of the optically functional layer structure 312, which is removed from the substrate 302.
  • the separation area 312g may be along a path 802
  • Substrate 302 and the second portion 302a of the substrate 302 adjacent to each other (compare Fig. 8A). If an adhesive layer 202h and an anti-adhesion layer 202a are used, the
  • the separation region 312g may be formed along an outer boundary (i.e., the edge) of the through-hole 202d
  • the optically functional layer structure 312 it may or may not be bonded to the optically functional layer structure 312 and thus have an adhesiveness to the optically functional layer structure 312, i. at. the optically functional layer structure 312 adhere.
  • the property of the individual layers to one another can be formed and / or set up as follows:
  • Force switching layer 402 triggers as of
  • Adhesion layer 202h so that the first portion 312a of the optically functional layer structure 312 remains on or above the adhesion layer 202h when the
  • Force switching layer 402 is moved away from the substrate 302 and removed.
  • the adhesiveness of the power imparting layer 402 to the optically functional layer structure 312 may be greater than the adhesiveness of the optically functional layer structure 312 to the non-adhesion layer 202a. This ensures that the optical
  • Non-stick layer 202a triggers as of
  • Layer structure 312 is removed from the release layer 202a when the force-transfer layer 402 is moved away from the substrate 302.
  • Layer structure 312 to the adhesive layer 202h be greater than the adhesion of the optically functional layer structure 312 to the release layer 202a.
  • Substrate 302 remains, the adhesion of the adhesive layer 202h to the substrate 302 may be greater than or equal to the
  • Adhesion of the optically functional layer structure 312 to the adhesive layer 202h be.
  • the release layer 202a When the adhesiveness of the release layer 202a to the substrate 302 is greater than or equal to the adhesiveness of the optically functional layer structure 312 to the release layer 202a, the release layer 202a remains the optically functional one upon removal of the second portion 312b
  • the adhesion layer 202a becomes common with the second portion 312b of the optical functional layer structure 312 of FIG
  • Adhesion of the individual layers to each other are designed and / or set up as follows: (a) The adhesion of the optically functional
  • Layer structure 312 to the adhesion layer 202h may be greater than the adhesion of the
  • the adhesiveness of the power imparting layer 402 to the optically functional layered structure 312 may be smaller than the adhesiveness of the optically functional layered structure 312 to the non-adherent layer 202a, when the adhesiveness of the non-adherent layer 202a to the
  • Substrate 302 is smaller than the adhesion of the optically functional layer structure 312 to the force-transmitting layer 402. Thus, it can be achieved that the non-stick layer 202a together with the second portion 312b of the optical
  • the optoelectronic component 400c shown in FIG. 4C largely corresponds to that shown in FIG. 4B
  • Section 312b of the optically functional layer structure 312 is or will be removed from the second region 302b of the substrate 302 together with the force-transmitting layer 402.
  • a side surface 312s of the optically functional layer structure 312 may be formed or which are the optically functional
  • the adhesion layer 202h may be used as an electrode, e.g. as lower electrode 310,
  • optically functional layer structure 312 can be contacted from below without further process steps. Is the non-stick splint 202a upon removal of the second
  • Section 312b of the optically functional layer structure 312 remained on or above the substrate 302, this may after removing the second portion 312b of the optically functional layer structure 312 in another
  • Process step for example by laser ablation, by etching (e.g., piasra etching or chemical etching), or by a suitable solvent in which a material of the release layer 202a is soluble.
  • etching e.g., piasra etching or chemical etching
  • suitable solvent in which a material of the release layer 202a is soluble.
  • a contact pad (not shown), e.g. a contact pad of the first electrode 310 or the second electrode 314 (compare FIGS. 3A to 3C) may be formed over the second region 302b of the substrate 302.
  • a contact pad e.g. a contact pad of the first electrode 310 or the second electrode 314 (compare FIGS. 3A to 3C) may be formed over the second region 302b of the substrate 302.
  • Layer structure 312 may be exposed over the second portion 302 b of the substrate 302 or.
  • at least one contact pad of the first electrode 310 and / or the second electrode 314 may be exposed by removing the optically functional layer structure 312 according to various embodiments.
  • FIGS. 5A to 5C each illustrate one
  • the optoelectronic component 500a shown in FIG. 4A largely corresponds to that shown in FIG. 4A
  • Optoelectronic component 400a wherein on or above the optically functional layer structure 312, a sacrificial layer 502 is or is formed.
  • the sacrificial layer 502 may be over both the first region 302a of the substrate 302 and the second region 302b of the substrate 302
  • the sacrificial layer 502 may illustratively be a layer poorly adherent to or over the optically functional layer structure 312.
  • the sacrificial layer 502 may be at least partially e.g. by vacuum processing and / or by means
  • Liquid phase processing may be formed or be.
  • forming the sacrificial layer 502 may include a layer of plastic, e.g. from a polymer-based plastic, e.g. Epoxy resin, lacquer or polyamide, of a metal or of a ceramic on or above the optically functional layer structure 312
  • a layer of plastic e.g. from a polymer-based plastic, e.g. Epoxy resin, lacquer or polyamide, of a metal or of a ceramic on or above the optically functional layer structure 312
  • forming the sacrificial layer 502 may include multiple such layers over or over or over the optical one
  • an adhesion promoter for example, an adhesive, as described above, on or above or above the optically functional layer structure 312 form, for example, apply, for example, apply.
  • an adhesion promoter for example, an adhesive, as described above, on or above or above the optically functional layer structure 312 form, for example, apply, for example, apply.
  • Layer structure partially cover, so that the
  • Sacrificial layer reduces the contact (or the contact surface) between the force-transmitting layer and the optically functional layer structure and thus the adhesion of the force-transmitting layer to the optically functional
  • the adhesion of the sacrificial layer to the optically functional layer structure may be negligible, e.g. less than the adhesion of the release layer 202a to the optically functional layer structure 312 and / or the substrate 302.
  • the optoelectronic component 500b largely corresponds to that shown in FIG. 5A
  • Optoelectronic component 500a wherein on or above the sacrificial layer 502, a force-transmitting layer 402
  • the optoelectronic component 500b shown in FIG. 5B largely corresponds to the optoelectronic component 400b illustrated in FIG. 4B, wherein the sacrificial layer 502 is arranged between the optically functional layer structure 312 and the force-transmitting layer 402.
  • the adhesion of the individual layers to one another can be designed or set up as follows:
  • the adhesion of the force-transmitting layer 402 to the sacrificial layer 502 may be greater than the adhesion of the sacrificial layer 502 to the optically-functional
  • the sacrificial layer 502 is rather reached by the optically functional layer structure 312 dissolves than the force-transmitting layer 402, so that the sacrificial layer 502 together with the
  • Layer structure 312 to the adhesion layer 202h may be greater than the adhesion of the sacrificial layer 502 to the optically functional layer structure 312,
  • the sacrificial layer 502 dissolves from the optically functional layer structure 312 rather than the optically functional layer structure 312 from the adhesion layer 202h, so that the first portion 312a of the optically functional layer structure 312 remains on or above the adhesion layer 202h, if the
  • Force switching layer 402 is moved away from the substrate 302 and removed.
  • the adhesion of the sacrificial layer 502 to the optically functional layer structure 312 may be greater than the adhesion of the optically functional
  • Non-stick layer 202a to the substrate 302.
  • Non-stick layer 202a or together with the
  • Non-stick layer 202a is removed from the substrate 302 when the sacrificial layer 502 together with the Force switch rail 402 is moved away from the substrate 302 and removed.
  • the adhesion of the optically functional layer structure 312 to the adhesion layer 202h may be greater than the adhesion of the optically functional layer structure 312 to the release layer 202a.
  • the ⁇ is a ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇
  • Sacrificial layer 502 may be greater than the adhesion of optically functional layer structure 312 to adhesion layer 202h.
  • a force-transfer layer 402 may be used that would later detach from the optically-functional layer structure 312 than the optically-functional layer structure 312 of the adhesion layer 202h, since the sacrificial layer 502 would be the
  • Adhesion of the optically functional layer structure 312 to the first region 302a of the substrate 302 is greater than the second adhesion of the optically functional
  • Substrate 302 when the adhesion of the non-stick layer 202a to the substrate 302 or to the optically fntationellen
  • Layer structure 312 is smaller than the adhesion of the optically functional layer structure 312 to the
  • Adhesive layer 202h Adhesive layer 202h.
  • Substrate 302 may be greater than the adhesion of the optically functional layer structure 312 to the non-stick layer 202a, if, for example, no adhesive layer 202h is used
  • Substrate 302 may be less than the adhesion of the optically functional layer structure 312 to the adhesion layer 202h, e.g. no release layer 202a is used
  • the optoelectronic component 500c shown in FIG. 5C largely corresponds to that shown in FIG. 4C
  • Section 312b of the optically functional layer structure 312 is removed from the second region 302b of the substrate 302 together with the force-transmitting layer 402 and the sacrificial layer 502.
  • FIGS. 6A and 6B each illustrate one
  • etching e.g., plasma etch or
  • FIG. 6A illustrates an optoelectronic device 600a in a cross-sectional view, wherein an adhesion structure 202 is formed on or above a substrate 302, the substrate 302 having a first region 302a and a second region 302b having. Over the region 302a and the second region 302b, an optically functional layer structure 312 is formed.
  • the adhesion structure 202 may be formed such that a first adhesion of the optically functional
  • Layer structure 312 to the first region 302a is greater than a second adhesion of the optically functional
  • FIG. 6B illustrates an optoelectronic device 600b in a cross-sectional view, wherein a part of the optically functional layer structure 312 ⁇ also as the second
  • Section 312b of the optically functional layered structure 312) is removed over the second region 302b of the substrate 302, or by applying a force 602 directed away from the substrate 302 to the optically functional one
  • Layer structure 312 is transmitted.
  • the force 602 may be transferred to the entire optically functional layer structure 312.
  • the force 602 may be detected by movement of the optoelectronic device 600b, e.g. in form of a
  • Centrifugal force generated by means of an air flow (which is generated for example by a blower).
  • Figs. 7A and 7B each illustrate one
  • FIG. 7A illustrates an optoelectronic component 700a in a cross-sectional view.
  • the optoelectronic component 700a illustrated in FIG. 7A largely corresponds to the optoelectronic component 600a illustrated in FIG. 6A, on or above the optically functional component
  • Layer structure 312, a force-transmitting layer 402 is formed.
  • the power transmission layer 402 may be configured to transmit a force 602 to the optically functional layer structure 312.
  • FIG. 7B illustrates an optoelectronic component 700b in a cross-sectional view.
  • the optoelectronic component 700b illustrated in FIG. 7B largely corresponds to the optoelectronic component 700a illustrated in FIG. 7A, wherein part of the force-transfer layer 402 is moved away from the substrate 302.
  • the optoelectronic component 700b illustrated in FIG. 7B largely corresponds to the optoelectronic component 700a illustrated in FIG. 7A, wherein part of the force-transfer layer 402 is moved away from the substrate 302.
  • Force-transfer layer 402 is moved from one side (i.e., with a component of movement in the lateral direction, i.e., in a lateral direction) in sections away from substrate 302, e.g., by manipulator or by hand, with force 602 applied to the optically functional one
  • Layer structure 312 is transmitted. In this case, e.g. peeling off the optically functional layer structure 312 from the edge of the substrate 302, e.g. For example, a detachment of the optically functional layer structure 312 from the edge of the optically functional layer structure 312 may take place, for example, in the direction of a center of the substrate 302. towards a center of optically functional
  • the force 602 can be transferred in sections, for example temporally and / or spatially successively, to the optically functional layer structure 312, eg on a first portion 312a of the optically functional layer structure 312 after the force 602 has been transferred to a second portion 312b of the optically functional layer structure 312.
  • the force 602 can be transferred in sections, for example temporally and / or spatially successively, to the optically functional layer structure 312, eg on a first portion 312a of the optically functional layer structure 312 after the force 602 has been transferred to a second portion 312b of the optically functional layer structure 312.
  • the force 602 may be applied to a second section 312 b of the optically functional layer structure 312
  • the force 602 may be generated externally, e.g. by means of a manipulator (not shown) to which the force-transmitting layer 402 is attached.
  • the force-transmitting layer 402 may be fastened to an end section of the force-transmitting layer 402 on a gripper of the manipulator.
  • the force-transmitting layer 402 may be wound up, e.g. on a roll ⁇ not shown).
  • the manipulator may be connected to a sensor (not shown) which provides feedback to the controller (not shown) about the progress of the detachment, e.g. in the form of information about a counter force acting on the manipulator, or in the form of graphic information about the state of detachment of the optical
  • the controller may then control movement of the manipulator, e.g. generating and transmitting the force 602 to the
  • Force switching layer 402 control or regulate
  • FIGS. 8A and 8B each illustrate a top view of an optoelectronic component according to various embodiments in a method 100 according to various embodiments for producing an optoelectronic component.
  • Fig. 5A illustrates an organic optoelectronic
  • organic optoelectronic device 700a analogous to the illustrated in FigSB organic optoelectronic device 500b and / or analogous to the illustrated in Fig. 4B organic optoelectronic
  • Component 400b above the substrate 302 (hidden in this view) and the optically functional layer structure 312 (in this FIG.
  • a power transmission layer 402 is arranged between the optically functional layer structure 312 and the substrate 302, an adhesive structure (concealed in this view) can be arranged as described above.
  • the substrate 302 has at least a first region 302a and a second region 302b, which adjoin one another along a path 804.
  • the separation region 312g of the optically functional layer structure 312 is disposed above the path 804.
  • Fig. SB illustrates an organic optoelectronic
  • the optoelectronic component 800b shown in Fig. SB corresponds largely to that in Fig. 8A
  • the optically functional layer structure 312 in the separation region 312g may be severed or become, e.g. tearing so that a portion of the optically functional layer structure 312 over the second region 302b of the
  • Substrate 302 together with the power switching layer 402 Will get removed.
  • a part of the optically functional layer structure 312 By removing the part of the optically functional layer structure 312, a
  • Layer structure 312 which extends over the second region 302b substrate 302 and which exposes the second portion 302b of the substrate 302 or the adhesive structure (not shown) at least partially
  • an irregular surface structure may be formed, e.g. an irregular surface structure of a side surface 312s of the optically functional layer structure 312, which delimits the optically functional layer structure 312.
  • the side surface 312s may define an edge of the optically functional layer structure 312.
  • FIG. 8C illustrates a detail view 802 of the organic optoelectronic device 800b illustrated in FIG. 8B.
  • the side surface 312s may be in the form of a cracked edge of the optically functional layered structure 312 and may be formed on the surface of the substrate 302, e.g. the
  • the main processing surface of the substrate 302 projects, having an irregular (e.g., random) contour, e.g. a f aktal-like contour.
  • the optically functional layer structure 312 may include a
  • the optically functional layer structure 312 may partially overlap the path 804.
  • Layer structure 312 be frayed in the separation region 312g, eg by tearing off. If the optically functional layer structure 312 is severed, the separation region 312 g can also be referred to as a transition region in which the optically functional layer structure 312 not edgy, sharp-edged, or abruptly terminates (ie ends).
  • Fig. 8D illustrates that illustrated in Fig. 5B
  • the irregularly shaped surface structure of the optically functional layer structure 312 in the separation region 312g may be defined, for example, by a first surface of the optically functional layer structure 312, which may be e.g. to the substrate 302 or to the adhesion structure ⁇ not shown), to one of the first surface
  • the side surface 312s may extend across the surface of the substrate 302 ⁇ e.g. the main processing surface) or at an angle, e.g. at an angle in a range of about 45 ° to about 90 °, e.g. in a range of about 55 ° to about 80 °, e.g. in a range of about 65 ° to about 70 °.
  • the side surface 312s of the optically functional layer structure 312 may be skewed, e.g. or the optically functional layer structure 312 may have a chamfer in the separation region 312g.
  • the side surface 312s may be shaped analogous to a fracture surface.
  • the side surface 312s may, for example, have a matrix roughness in a range of about 0.01 pm to about 0.5 pm, for example in a range of about 0.02 pm to about 0.2 ⁇ m, for example in a range of about 0.05 pm to about 0.1 pm. Further, by severing the optically functional layer structure 312, micro-cracks may be formed which extend from the side surface 312s into the optically functional layer structure 312, eg, having a length in a range from about 1 nm to about 1 ⁇ m, eg, in one Range from about 10 nm to about 100 nm.

Abstract

Selon différents modes de réalisation, un procédé (100) pour fabriquer un composant optoélectronique (400c, 500c, 600b, 700b, 800b) comprend les étapes consistant : à former une structure adhésive (202) sur un substrat (302), le substrat (302) pouvant présenter une première zone (302a) et une deuxième zone (302b) ; à former une structure de couches (312 ) optiquement fonctionnelle sur la première zone (302a) et la deuxième zone (302b), la structure adhésive (202) pouvant être conçue de sorte qu'un premier pouvoir adhésif de la structure de couches (312) optiquement fonctionnelle par rapport à la première zone (302a) est supérieur à un second pouvoir adhésif de la structure de couches (312) optiquement fonctionnelle par rapport à la deuxième zone (302b) ; à retirer une partie de la structure de couches (312) optiquement fonctionnelle sur la deuxième zone (302b), une force (602) dirigée à l'opposé du substrat (302) étant transmise à la structure de couches (312 ) optiquement fonctionnelle, la structure adhésive (202) présentant une couche adhésive qui est formée sur la première zone (302a) et qui reste sur le substrat (302) lors du retrait de la partie de la structure de couches (312) optiquement fonctionnelle.
PCT/EP2016/054923 2015-03-13 2016-03-08 Procédé de fabrication d'un composant opto-électronique WO2016146438A1 (fr)

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DE102015103702.5A DE102015103702A1 (de) 2015-03-13 2015-03-13 Verfahren zum Herstellen eines optoelektronischen Bauelements

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Citations (2)

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JP2009032912A (ja) * 2007-07-27 2009-02-12 Sony Corp 半導体装置の製造方法および有機発光装置の製造方法
WO2010061206A1 (fr) * 2008-11-03 2010-06-03 Cambridge Enterprise Limited Procédé de traçage d’un motif sur un matériau électronique ou photonique

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Publication number Priority date Publication date Assignee Title
JP2009032912A (ja) * 2007-07-27 2009-02-12 Sony Corp 半導体装置の製造方法および有機発光装置の製造方法
WO2010061206A1 (fr) * 2008-11-03 2010-06-03 Cambridge Enterprise Limited Procédé de traçage d’un motif sur un matériau électronique ou photonique

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Title
NATURE, vol. 477, 2011, pages 443 - 447

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