WO2016146438A1

WO2016146438A1 - Method for producing an optoelectronic component

Info

Publication number: WO2016146438A1
Application number: PCT/EP2016/054923
Authority: WO
Inventors: Nina Riegel; Daniel Riedel; Thomas Wehlus; Silke SCHARNER; Johannes Rosenberger; Arne FLEISSNER
Original assignee: Osram Oled Gmbh
Priority date: 2015-03-13
Filing date: 2016-03-08
Publication date: 2016-09-22
Also published as: DE102015103702A1

Abstract

According to various embodiments, a method (100) for producing an optoelectronic component (400c, 500c, 600b, 700b, 800b) can include the following: formation of an adhesive structure (202) over a substrate (302), wherein the substrate (302) can have a first region (302a) and a second region (302b); formation of an optically functional layer structure (312) over the first region (302a) and the second region (302b); wherein the adhesive structure (202) can be formed such that a first adhesiveness of the optically functional layer structure (312) with respect to the first region (302a) is greater than a second adhesiveness of the optically functional layer structure (312) with respect to the second region (302b); removal of a portion of the optically functional layer structure (312) over the second region (302b) by transmitting a force (602) directed away from the substrate (302) to the optically functional layer structure (312); wherein the adhesive structure (202) has an adhesive layer, formed over the first region (302a), that remains over the substrate (302) when the portion of the optically functional layer structure (312) is removed.

Description

description

Method for producing an optoelectronic component The invention relates to a method for producing an optoelectronic component.

In general, layers of organic semiconductors (also referred to as organic layers) can be used for a variety of applications, e.g. for converting electrical energy into light or for converting light into electrical energy. For example, organic light-emitting diodes (OLEDs) can be produced which are used in electronic devices, e.g. in displays of TV sets, billboards or mobile phones, or as a flat

Light source for generating light. An OLED can consist of a multiplicity of organic layers which

successively on a support (can also be used as a substrate

be designated) are applied.

To structure these organic layers is

conventionally a part of the organic layers

subsequently ablated from the substrate, e.g. by means of

Laser ablation. This method is however expensive and

also causes residues of the ablated material, which contaminate the organic layers and lead to short circuits in current-carrying (active) areas of the OLED. Furthermore, the organic layers in the

ablated areas do not remove completely residue-free, what the functionality of the OLED made from it

impaired.

Are the organic layers in the. Vacuum applied by vacuum processing {as well as physical

Gas phase deposition referred to), areas in which no coating is to take place, can be shaded by means of a so-called shadow mask. For different Structures are adapted to a variety

Shadow masks needed, which also expensive in the

Production, so that they increase production costs. Furthermore, the structuring is limited by the shape of the shadow masks, e.g. can be specific

Patterning patterns are difficult to realize, e.g. if individual isolated areas should be shaded. Are the organic layers of a solution

is applied, for structuring herkömmlicherwei e

Photolithography used in the organic semiconductors with photoresist function (also called photoresist function

used). Their solubility in one.

certain solvents can either be improved by exposure (also known as positive or positive resist) or worsened (also referred to as negative or negative resist). Clearly, the organic layers can be rendered soluble or insoluble in predefined regions. After exposure, the entire organic layer is rinsed with the solvent and the soluble areas washed away. The solvent used can, however, leave residues or attack other already existing layers, e.g. replace, to protect existing layers, they can be networked together.

For organic materials, however, such crosslinking is known only to those who are applied in the form of a solution, i. which are solution-processable, and is therefore inaccessible to vacuum-processed layers. By networking, the lifetime is further compromised compared to vacuum-processed layers,

for example, in the case of emitter layers.

According to various embodiments, a method is provided which is residue-free Back structuring of organic layers allows.

Further, according to various embodiments

allows to avoid the use of shadow masks. For example, according to various

Embodiments form one or more organic layer (s) for an OLED structured. This makes it possible, for example, for contact areas of the OLED to remain free or to be exposed. Thus, an organic layer can be formed, which defines a defined

Luminous surface covered and this around the edges

defined tolerance range covers (in other words overlaps). According to various embodiments, the organic layers may be used in planar organic layers, such as in some active matrix displays or in light sources for illuminating premises or

Within the edge encapsulation, objects (so-called lighting products) can be found, so that moisture (for example, diffusion) into the active display areas can be prevented from entering, thereby increasing the life of the display areas Forming an optoelectronic device comprising forming an adhesion structure over a substrate, the substrate having a first region and a second region, forming an optically functional layer structure over the first region and the second region, wherein the adhesion structure is or is formed in that a first adhesion of the optically functional layer structure to the first region (of the substrate) is greater than a second adhesion of the optical one

functional layer structure to the second region {of the substrate); and removing a part of the optical

functional layer structure over the second area, by transferring a force directed away from the substrate to the optically functional layer structure.

According to various embodiments, a method of fabricating an optoelectronic device may include forming an adhesion structure over a substrate, wherein the substrate may include a first region and a second region; Forming an optically functional layer structure over the first region and the second region; wherein the adhesive structure is or becomes such that a first adhesion of the optically functional layer structure to the first region {of the substrate) is greater than a second adhesion of the optical

functional layer structure to the second region (of the substrate); and removing a part of the optical

functional layer structure over the second region by transferring a force directed away from the substrate to the optically functional layer structure; and wherein the adhesive structure is one over the first region

has formed adhesive layer which remains on removal of the part of the optically functional layer structure above the substrate.

According to various embodiments, a method of fabricating an optoelectronic device may include forming an adhesion structure over a substrate, wherein the substrate may include a first region and a second region; Forming an optically functional layer structure over the first region and the second region; wherein the adhesive structure is or becomes such that a first adhesion of the optically functional layer structure to the first region (of the substrate) is greater than a second adhesion of the optical element

functional layer structure above the. second region, by a force directed away from the substrate on the optically functional layer structure is transferred;

Forming a sacrificial layer between the

Force-transmitting layer and the optically functional

Layer structure, wherein an adhesion of the sacrificial layer to the optically functional layer structure is smaller than the first adhesion and is greater than the second

Adhesion.

Vividly, by the force of the part of the optically

functional layer structure over the second area detached and removed.

According to various embodiments, the optical

functional layer structure at least one organic

Layer (also referred to as organic layer), e.g. several organic layers.

Forming an optically functional layer structure over the first region and the second region may, according to various embodiments, comprise forming the optically functional layer structure over the entire surface of the substrate, e.g. to apply or to dismiss. In other words, the substrate may be a main processing surface

have, differ from the optically functional

Layer structure is completely covered.

According to various embodiments, the optical

functional layer structure for converting electrical energy into electromagnetic radiation, for converting electromagnetic radiation into electrical energy and / or for converting light of one wavelength into light having a different wavelength.

The first adhesion may also be referred to as a first adhesion mediation between the optically functional layer structure and the first region of the substrate, and the second adhesion may also be referred to as a second adhesion mediation between the optically functional layer structure and the second region of the substrate are understood. In other words, the adhesive structure acts as a primer, that is, as a connector or compound which is the optically functional

Layer structure connects to the substrate and which a first adhesion mediation between the optically functional layer structure and the first region of the substrate greater than a second adhesion between the optical

functional layer structure and the second region of the substrate provides.

According to various embodiments, the adhesive structure may comprise an anti-adhesion layer formed over the second region. The non-stick layer may have the adhesiveness of the optically functional layer structure z to the second

Define the area of the substrate. Vividly the

Anti-stick layer act as a poor Haftvermit ler, which bad adheres to the substrate and / or schiecht to the optically functional layer structure.

According to various embodiments, the first region and / or the adhesion layer may be electrically conductive (ie, an electrical conductivity greater than about 10 ^s

Siemens per meter, e.g. greater than approx

IQ ⁷ Siemens per meter, eg greater than approximately 5 · 10 ⁷ Siemens per meter).

According to various embodiments, the adhesive structure may comprise an anti-adhesion layer formed over the second region, which upon removal of the part of the optical

functional layer structure remains above the substrate. Alternatively or additionally, the adhesive structure may comprise an anti-adhesion layer formed over the second region, which on removal of the part of the optically functional layer structure at the part of the optically functional

Layer structure remains. For example, the adhesive structure may be configured such that an adhesion of the optical functional layer structure to the release layer is greater than an adhesion of the release layer to the substrate. In this case, the anti-adhesion layer is removed from the substrate when the optical functional layer structure is removed over the second region of the substrate.

Alternatively, the adhesive structure may be configured such that an adhesion of the optically unctional layer structure to the release layer is smaller than an adhesion of the release layer to the substrate. In this case, the release layer may remain on or over the substrate when the optically functional layer structure is removed over the second region of the substrate.

The release layer may provide a second adhesion mediation between the optically functional layer structure and the second region of the substrate, which is smaller than a first adhesion mediation between the optically functional layer structure and the first region of the substrate.

According to various embodiments, the

Non-stick layer have a perfluorinated polymer, e.g. Polytetrafluoroethylene.

Alternatively or additionally, according to various embodiments, the non-stick layer may comprise at least one or more of the following materials: perfluorinated

self-assembling monolayer (seif-assembled momolayers (SAMs)), polyfluoroolefins, silicones, nanoparticle-reinforced composite systems based on polymerizable nanoparticles and hybrid matrices, nanofibers made of teflon impregnated with fluorine hydrocarbon solution (Nature, Volum 477, pages 443-447 ( 2011)). The anti-sticking agent may have a layer thickness in a range of about 5 nm to about 1 pm, for example in a range of about 10 nm to about 0.5 μπι, for example in a range of about 50 nm to about 0.1 μπι.

According to various embodiments, the

Non-stick layer a self-organizing monolayer (also referred to as SAM). In other words, the release layer may be or may be formed from a material that is formed on or over the substrate

automatically forms a simple monolayer with a high internal order. A monolayer can be understood as a thin layer with the thickness (layer thickness) of a single layer of molecules or atoms. The bigger the

Molecules of the material from which the monolayer is formed, the greater the layer thickness of the monolayer can be. The monolayer (also referred to as monolayer) may have a layer thickness in the range of about 0.1 nm to about 10 nm.

Alternatively, the adhesive structure according to various

Embodiments over the second area a recess, e.g. in the form of a Durchgangsöff in the adhesive structure, which exposes the substrate. In this case, the optically functional layer structure may, for example, be in direct contact with the substrate over the second region of the substrate. In other words, it can according to

various embodiments are sufficient, by means of

Adhesive structure the adhesion of the optically functional

Layer structure to increase the first region of the substrate. In this case, for example, no

Non-stick coating required. For example, the second adhesion of the contact of the optically functional

Layer structure may be defined with the second region of the substrate, for example, of the surface of the substrate, for example of a roughness or surface texture (also referred to as surface structure) of the substrate For example, the smaller the roughness of the substrate, the smaller the second adhesiveness.

According to various embodiments, the adhesive structure may include an adhesive layer formed over the first region

exhibit. The adhesive layer may define the adhesion of the optically functional layer structure to the first region of the substrate. Clearly, the adhesive layer can act as a good adhesion promoter, which adheres well to the substrate and / or well to the optically functional layer structure.

The adhesive layer may comprise a first adhesion mediation between the optically functional layer structure and the first

Provide area of the substrate, which is greater than a second adhesion between the optical

functional layer structure and the second region of the substrate. According to various embodiments, the adhesive layer may be used as an electrode, e.g. as the lower electrode, which electrically contacts the optically functional layer structure, as described below. Alternatively or additionally, the adhesive layer according to

various embodiments at least one or more of the following materials: organic

functionalized silane, titanate, zirconate, polyester, polyethyleneimine. Good adhesion could also be achieved by coating the surface with silicon dioxide (eg by means of plasma assisted chemical vapor deposition (PECVD)).

The larger the adhesion between two components, the greater the adhesion between the two

Be components. The adhesive strength can be used as a measure of the resistance of a coating to its mechanical separation be understood from the underground. Many of the foregoing materials also provide improved wettability of the surface for subsequent layers. For improved wettability, an adhesive layer (ie, a substrate) may have reactive groups such as carbonic acid residues or hydroxide groups.

The adhesive layer may have a layer thickness in the range of about 5 nm to about 10 μτα, e.g. in a range of about 10 nm to about 5 μπ \, e.g. in a range of about 50 nm to about 1 μπι, e.g. in a range of about 100 nm to about 0.5 pm.

Alternatively, the adhesive structure over the first region may have a recess exposing the substrate. In this case, the optically functional layer structure

for example, in direct contact with the substrate over the first region of the substrate. In other words, it may be sufficient according to various embodiments, by means of the adhesive structure, the adhesion of the optically functional

Layer structure to reduce the second region of the substrate. In this case, for example, no

Adhesive layer needed. For example, the first adhesion of the contact of the optically functional

Layer structure may be defined with the first region of the substrate, e.g. from the surface of the substrate, e.g. from a roughness or surface texture of the

Substrate. For example, the greater the roughness of the substrate, the greater the first adhesion,

According to various embodiments, the adhesive structure may include a first region {e.g. over the first area of the

Substrate) and a second region (e.g., over the second region of the substrate) and configured to provide adhesion of the first region of the substrate

Adhesive structure to the optically functional layer structure and / or to the substrate is greater than an adhesion of the second region of the adhesion structure to the optically functional layer structure and / or to the substrate. The first region of the adhesive structure may be formed as an adhesive layer and the second region of the adhesive structure may be formed as an anti-adhesion layer or as a recess in the adhesive structure (eg in the adhesive layer). Alternatively, the second region of the adhesive structure may be formed as an anti-adhesion layer and the first region of the adhesive structure may be formed as a recess in the adhesive structure (eg in the anti-adhesion layer).

The adhesion of the optically functional layer structure to the adhesion structure may or may not be defined by the surface energy of the adhesion structure. For example, the surface energy of the anti-adhesion layer may be lower

be set up as the surface energy of the

Adhesive layer. For example, the surface energy of the non-stick layer may be set lower than the

Surface energy of the substrate, e.g. if no adhesive layer is used. For example, the surface energy of the adhesive layer may be set larger than the

Surface energy of the substrate, e.g. if no

Non-stick layer is used.

According to various embodiments, a

Force-transmitting layer over the optically functional

Layer structure are formed, wherein the force is transferred to the optically functional Schichtens structure by the force-transmitting layer is moved away from the substrate. Illustratively, the force-imparting layer may have sufficient adhesiveness to the optically functional layer structure such that a portion of the optically functional layer structure adheres to it as the force-transmitting layer is moved away from the substrate and the portion of the optically-functional layer structure is removed from the substrate , According to various embodiments, an adhesion of the force-transmitting layer z of the optically functional layer structure may be smaller than the first adhesion and greater than the second adhesion.

According to various embodiments, in the method, a sacrificial layer may be formed between the force-transmitting layer and the optically functional layer structure, wherein an adhesion of the sacrificial layer to the optically-functional layer structure is smaller than the first adhesion and larger than the second

Adhesion.

Illustratively, the sacrificial layer can be a detachment of the

Prevent layer structure when the power layer adhere to s ark, i. if the force-transmitting layer is e.g. not destructive of the optically functional

Layer structure can be detached, for example, over the first area. In other words, over the first region instead of the optically functional layer structure, the sacrificial layer is removed, i. this is sacrificed to the optically functional layered structure over the first

Protect area from damage. It can the

Sacrificial layer consumed, e.g. destroyed, i. the sacrificial layer absorbs the damage without passing it on to the optically functional layer structure.

Clearly, the sacrificial layer can be used if the adhesion of the force-transmitting layer to the optically functional layer structure is greater than that

Adhesion of the optical funk ionellen layer structure to the substrate, in particular to the first region of the

Substrate, so that the optically functional layer structure without a sacrificial layer above it would be removed from the first region of the substrate. In other words, the sacrificial layer can define the adhesion of the force-transmitting layer to the optically-functional layer structure. For example, a material from which the sacrificial layer is formed may become the adhesiveness of the material

Force transfer layer to the optically functional

Influence layer structure.

According to various embodiments, according to various embodiments, the sacrificial layer may comprise at least one or more of the following materials: a metal (e.g., the sacrificial layer may be formed in the form of a metallic layer), e.g. Aluminum or magnesium, perfluorinated polyolefins, or surface-modified

Carbon nanotubes. The sacrificial layer may have a layer thickness in a range of about 10 nm to about 10 μm, e.g. in a range of about 20 nm to about 5 μπι, e.g. in a range of about 50 nm to about 1 μτη, e.g. in a range of about 100 nm to about 0.5 μm.

According to various embodiments, an adhesion of the sacrificial layer to the force-transfer layer may be greater than an adhesion of the sacrificial layer to the optical layer

f ional layer structure. By means of the sacrificial layer can thus be an adhesion of the

Force-transmitting layer to the optically functional

Adjust layer structure, e.g. reduce, e.g.

regardless of the nature and nature of the

Force transfer layer.

The sacrificial layer makes it possible for the Ver

to use uniform force-transfer layers for different layer architectures, eg for different OLED layer architectures and / or different adhesion structures and thus to simplify the manufacturing process and to save costs. According to various embodiments, an optoelectronic device may include: a

substrate; an adhesive structure arranged above the substrate, which has at least a first region and a second region

Has area; an optically functional layer structure arranged above the adhesion structure, which is suitable for converting electrical energy into electromagnetic radiation or for converting electromagnetic radiation into

electrical energy is set up, wherein the adhesive structure is set up such that an adhesion of the first

Area to the optically functional layer structure or to the substrate is greater than an adhesion of the second region to the optically functional layer structure or to the substrate.

According to various embodiments, a

optoelectronic component comprising: a

Substrate having at least a first region and a second region, which along a path

adjoin each other; one above the substrate

Adhesive structure; an optically functional layer structure disposed over the adhesive structure configured to convert electrical energy to electromagnetic radiation or to convert electromagnetic radiation to electrical energy, the second region being free of the optically functional layer structure; and wherein the optically functional layer structure over the path has a separation region in which the optically functional layer structure is severed and has an irregular contour (or surface structure).

For example, the optically functional

Layers structure one above the second area

Having extending through opening, which exposes the second area or the fastening structure f eeilegt. The Haf structure and the optically functional

Layer structure of the optoelectronic component may be configured as described herein. The optically functional layer structure (also called active organic) can be part of an optoelectronic

Be component, wherein the optoelectronic device may additionally comprise at least one further layer, e.g. a layer formed as an electrode, a

Barrier layer or an encapsulation layer. The

Optoelectronic device may alternatively comprise several further layers, as mentioned above, e.g. i have combination with each other. According to various embodiments, the optically functional layer structure may comprise a plurality of organic layers which are stacked on top of one another and form a so-called layer stack. For example, more than three, more than four, more than five, more than six, more than seven, more than eight, or more than nine layers may be formed on top of each other, e.g. more than ten, e.g. more than twenty layers.

The formation of a layer, e.g. an organic layer, a layer of the optically functional layer structure, a layer of the adhesion structure and / or a layer of an organic optoelectronic component

for example by means of liquid phase processing. The liquid phase processing may be carried out on iron to dissolve or disperse a substance for the layer (eg, for an organic layer, a metallic layer or eg a ceramic layer) in a suitable solvent, for example in a polar solvent such as water, dichlorobenzene, tetrahydrofuran and phenetole , or

for example, in a non-polar solvent such as toluene or other organic solvents, for example in fluorine-based solvent, also called perfluorinated Solvent to form a liquid phase of the layer. Two solvents are orthogonal to each other when one is polar and the other is nonpolar. Substances that dissolve in a polar solvent are mostly nonpolar

Solvent insoluble. So it is by means of orthogonal

Solvent possible to deposit two or more layers of a solution on top of each other without an already deposited layer is dissolved again. perfluorinated

Solvents are considered complementary, they can have a low dipole moment and still dissolve substances that are more soluble in polar solvents.

Furthermore, the formation of the layer by means of

Liquid phase processing, the liquid phase of the layer by liquid phase deposition (also known as

wet-chemical or wet-chemical coating) on or over a surface to be coated (e.g., on or over the substrate, or on or over another layer of the organic optoelectronic device), e.g. apply.

The liquid phase processing may vary according to various

Embodiments in combination with a mask (also referred to as template) take place. For example, the mask may have a pattern that defines a surface that is being coated. For example, the pattern may be formed by means of one or more passage openings in the mask, e.g. in a plate, be formed. Through the passageway, the solution (i.e., the liquid phase) of the layer may reach or over the area to be coated. In other words, the shape of the pattern may or may not be imaged on the coated surface such that the coated surface has the shape of the pattern. In the case of one

Screen printing coating, the mask may for example be part of the coating device. Alternatively, the liquid phase processing may be done with a nozzle defining the area at which

Liquid phase reaches or over the substrate. The nozzle may be moved across the substrate according to a predefined path so that the liquid phase is applied along or over the substrate along the path and a coated area in the form of the path is created. If a contiguous and closed area is to be coated, adjacent sections of the path may lie so close to one another that newly applied liquid phase comes into contact with and is mixed with already applied liquid phase.

Alternatively or additionally, the formation of a layer can take place by means of a vacuum processing. A

Vacuum processing may include a layer (e.g., an organic layer, a metallic layer, and / or a ceramic layer) using one or more of the

Form the following methods: Atomic Layer Deposition (ALD), sputtering, thermal

Evaporation, Plasma Enhanced Atomic Layer Deposition (PEALD),

plasma-less Atomic Layer Deposition (PLALD) or chemical

Gas phase deposition process (Chemical Vapor Deposition

(CVD)), e.g. a plasma-assisted

Plasma Enhanced Chemical Vapor Deposition (PECVD) or a plasmalase

Gas Phase Separation Process (Plasma-less Chemical Vapor

Deposition (PLCVD)).

Alternatively or additionally, the formation of at least some layers by means of vacuum processing and other layers by liquid phase processing, ie by means of so-called hybrid processing, wherein at least one layer (eg, three or more layers) from a solution (ie, as a liquid phase) and the remaining layers in Vacuum be processed. The formation of a layer can take place in a processing chamber, for example in a vacuum processing chamber or a liquid-phase processing chamber.

A method according to various embodiments

allows the jerk structuring, i. removing a portion of the optically functional layer structure to perform outside the processing chamber, e.g. in normal atmosphere, e.g. outside a processing plant. This can reduce production costs because of

Production process of organic optoelectronic

Component and / or the processing can be simplified.

One or more layers, e.g. organic layers of the organic optoelectronic device can be crosslinked with each other, e.g. after they are formed. In this case, a large number of individual molecules of the layers can be linked together to form a three-dimensional network. This can be the consistency of the organic

optoelectronic device, e.g. towards solvents. In the context of this description can under a

Optoelectronic component to be understood as a device that by means of a semiconductor device

emitted or absorbed electromagnetic radiation. The electromagnetic radiation may be, for example, light in the visible range, UV light and / or infrared light, e.g. Light of a color valence.

According to various embodiments, a

Optoelectronic component as electromagnetic

Radiation generating and emitting device

be formed or be, for example, as a light emitting diode (light emitting diode, LED), as a light emitting diode referred to as an organic light-emitting diode (OLED), as light-emitting

Transistor or emitting as organic light

Transistor.

According to various embodiments, an organic optoelectronic device may be electromagnetic

Radiation absorbing device may be formed or be, for. as a light-absorbing diode or transistor, for example as a photodiode or as a solar cell.

The organic optoelectronic component can in

various embodiments be part of an integrated circuit. Furthermore, a plurality of

electromagnetic radiation absorbing components may be provided, for example, arranged on or above a common carrier (may also be referred to as a substrate) and / or accommodated in a common housing. For example, several components of a

common optically functional layered structure, e.g. by removing a part of the optically functional layer structure between the several components. For example, a plurality of electromagnetic radiation emitting devices may interact with each other, e.g. create overlapping light and

emit, so that e.g. a color valence, such as white, can be adjusted or a colored pattern can be generated. According to various embodiments, an organic optoelectronic device may comprise at least one organic

Have layer. Furthermore, the organic

Optoelectronic device also one or more

have inorganic layers (eg in the form of electrodes or barrier layers). According to various embodiments, the optoelectronic component may have a contact structure which electrically contacts the first region and / or the adhesion layer. The contact structure may have at least one (eg one or two or more than two) contact pads and / or at least one (eg one or two or more than two) electrical leads (eg, trace) comprising the first region and / or the adhesion layer electrically

contacted, e.g. with the at least one contact pad

electrically conductive connects.

As a compound in the sense of a substance (for example, an organic, inorganic or organometallic compound) may include

Substance can be understood from two or more different chemical elements, which in a chemical bond

have one another, for example, a molecular

Compounds (also referred to as molecules) an ionic compounds, an intermetallic compound or a higher-order compound (also referred to as a complex). The term "material" can be used synonymously with the term "substance".

In the context of this description, a metal may comprise at least one metallic element, e.g. Copper (Cu), silver (Ag), platinum (Pt), gold (Au), magnesium (Mg), aluminum (AI), barium (Ba), indium {In), calcium (Ca), samarium (Sm) or Lithium (Li). Further, a metal may comprise a metal compound (e.g., an intermetallic compound or an alloy), e.g. a connection of at least two

metallic elements, e.g. Bronze or brass, or e.g. a compound of at least one metallic element and at least one non-metallic element, e.g.

Stole . In the context of this description, an organic layer can be understood as a layer which comprises or is formed from an organic material. Analogous to this an inorganic layer is understood as a layer comprising or formed of an inorganic material. Analogously, a metallic layer can be understood as a layer which is a metal

has or is formed therefrom.

In the context of this specification, the adhesion of a first component to a second component (e.g., a layer to a support) can be understood as the force necessary to release the first component from the second component. The adhesion can also be considered

Adhesion coefficient, e.g. between the first component and the second component. For example, the adhesion of the first

Component to the second component can be measured by a force is transmitted to the first component while the second component is fxiert, the force is directed away from the second component, e.g. from the second component to the first component. The

Haf fortune then corresponds to the force at which the first component of the second component dissolves. In other words, the detention can be analogous to the maximum

mechanical stress and express how much a compound (e.g., a primer) may be stressed between the first component and the second component before it fails, i. is severed, e.g. breaks or tears (also called maximum tensile strength).

Adhesion may also be described as stress, i. Power per

Area, be expressed. Is the adhesion as

In terms of stress, the force at which the first component separates from the second component may be normalized to the area at which the first component contacts the second component, ie Interface between the first component and the second component.

Embodiments of the invention are in the figures

and are explained in more detail below.

Show it

Figure 1 is a schematic flow diagram of a method for

Producing an optoelectronic component;

Figure 2A is a cross-sectional view of an optoelectronic

Device in a method for producing an optoelectronic device;

Figure 2B is a plan view of that shown in Figure 2A

optoelectronic component in a method for producing an optoelectronic component; FIGS. 2C to 2E each show a cross-sectional view of an optoelectronic component i of a method for producing an optoelectronic component;

FIG. 3A to FIG. 3C each show a cross-sectional view of an optoelectronic component in a method for

Producing an optoelectronic component;

4A to 4C each show a cross-sectional view of an optoelectronic component in a method for producing an optoelectronic component;

FIGS. 5A to 5C each show a cross-sectional view of an optoelectronic component in a method for producing an optoelectronic component; 6A and 6B each show a cross-sectional view of an optoelectronic component in a method for producing an optoelectronic component;

7A and 7B each show a cross-sectional view of an optoelectronic component in a method for producing an optoelectronic component;

8A and 8B each show a plan view of a

optoelectronic component in a method for producing an optoelectronic component;

Figure 8C is a detail view of that shown in Figure 8B

optoelectronic component; and

Figure 8D is a cross-sectional view of an opto-electronic

Device in a method for producing an optoelectronic device; In the following detailed description, reference is made to the accompanying drawings, which form a part hereof and in which is by way of illustration specific

Embodiments are shown in which the invention can be practiced. In this regard will

Directional terminology such as "top", "bottom", "front", "rear", "front", "rear", etc, used with reference to the orientation of the described figure (s). There

Components of embodiments in number

different orientations can be positioned, the directional terminology is illustrative and is in no way limiting. It should be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. It should be understood that the features of the various exemplary embodiments described herein may be combined with each other unless specifically different The following detailed description is therefore not to be construed in a limiting sense, and the

Scope of the present invention is defined by the appended claims.

In the context of this description, the terms

"connected", "connected" and "coupled" used to describe both a direct and indirect connection, a direct or indirect connection and a direct or indirect coupling. In the figures, identical or similar elements are provided with identical reference numerals, as appropriate.

Furthermore, in the context of this description, the term "about" can be understood in connection with the formation of a layer, such that a layer formed over a surface (eg a support) or a component (eg a support) is in direct physical contact with the surface or the component is or will be formed. Furthermore, the term "via" can be understood as meaning that one or more further layers are arranged between the layer and the component.

1 illustrates a schematic flow diagram of a method 100 for producing an optoelectronic

Component.

The method 100 includes, in 102, forming an adhesion structure over a substrate, the substrate having a first region and a second region. Furthermore, the method 100 i 104 on an optically funk ionelle

Form layer structure over the first region and the second region, wherein the adhesive structure in such a way

is formed or that a first adhesion of the optically functional layer structure to the first region is greater than a second adhesion of the optical

functional layer structure to the second area. Further, in FIG. 108, the method 100 includes removing a portion of the optically functional layer structure over the second region by removing one from the substrate

directed force on the optically functional

Layer structure is transferred.

FIGS. 2A to 2E each illustrate

Optoelectronic device according to various

Embodiments in a method according to various embodiments for producing an optoelectronic component.

FIG. 2A illustrates an optoelectronic component 200a in a cross-sectional view, and FIG. 2B illustrates the optoelectronic component 200a in a plan view.

According to various embodiments, the

optoelectronic devices 200a have a substrate 302, e.g. in the form of a foil or plate, which may have a first region 302a and a second region 302b.

According to various embodiments, the first region 302a may be disposed adjacent to the second region 302b.

For example, the first area 302a may be the second

Area 302b laterally (e.g., laterally) as shown in Fig. 2B. Alternatively, the first region 302a may be the second region 302b only partially lateral (e.g.

laterally) (see, for example, Figs

Fig. 8C). Alternatively, the second region 302b may surround the first region 302a laterally (e.g., laterally) (not

shown). Alternatively, the second region 302b may include the first region 302a only partially lateral (e.g.

laterally) (not shown).

According to various embodiments, the substrate 302 may include a first region 302a or multiple first regions 302a exhibit. Alternatively or additionally, the substrate 302 may include a second region 302b or a plurality of second regions 302b. For example, a contiguous first region 302a may at least partially laterally surround a plurality of second regions 302b. Alternatively or additionally, a contiguous second region 302b can surround a plurality of first regions 302a at least partially laterally.

The first area 302a may, for example, define a luminous area of the organic optoelectronic component 200a, from which the organic optoelectronic component 200a emits light. In other words, the organic optoelectronic component 200a may have or form a luminous area over the first area 302a.

The second area 302b may be, for example, a

Contact surface of the organic optoelectronic

Define device 200a in which the organic

optoelectronic component 200a is electrically contacted. In other words, the organic optoelectronic component 200a may have a second region 302b above the second region 302b

Have or form contacting surface. For this it may be necessary to contact the organic

optoelectronic component 200a of the optical

functional layer structure 312 (see, for example, FIGS. 3A and 4A to 4C).

The first area 302a and / or the second area 302b

For example, lateral expansion, i. along the

Main processing surface of the substrate on or over which the optically functional layer structure is formed, in a range of about 50 pm to about 10 mm, for example in a range of about 100 pm to about 5 mm, for example in a range of about 500 pm to about 1 mm. Fig. 2C illustrates an optoelectronic device 200c in a cross-sectional view. The optoelectronic component 200c illustrated in FIG. 2C largely corresponds to the optoelectronic component 200a shown in FIG. 2A, wherein an adhesion structure 202 having an anti-adhesion layer 202a is formed on the substrate 302.

The release layer 202a may be disposed over the second portion 302b of the substrate 302, e.g. such that the first region 302a of the substrate 302 is free of the release layer 202a.

According to various embodiments, the

Non-stick layer 202a may be formed by liquid phase processing or vacuum processing.

For example, the release layer 202a may or may not be applied to or over the substrate 302 and

subsequently removed from the first region 302a of the substrate 302, e.g. by means of an etching process or by Laserabiat ion. In other words, the first region 302a of the substrate 302 can be exposed. The exposure of the first area 302a can be done, for example, by a

Recess, e.g. in the form of a through-hole 202d, in the adhesive structure 202, e.g. is formed in the non-stick layer 202a or is. In other words, the recess may at least partially expose the substrate 302.

Alternatively, the substrate 302 may be sandwiched by a mask, e.g. a shadow mask or stencil, selectively (e.g.

exclusively) on or over the second region 302b of the substrate 302.

FIG. 2D illustrates an optoelectronic device 20 Od in a cross-sectional view. The optoelectronic component 200d shown in FIG. 2D largely corresponds to the optoelectronic component 200a shown in FIG. 2A, wherein on or above the substrate 302, an adhesive structure 202 is formed with an adhesive layer 202h.

The adhesive layer 202h may be disposed over the first region 302a of the substrate 302 or may be formed, e.g. such that the second area 302a of the substrate 302 is free of the

Adhesive layer 202h.

According to various embodiments, the adhesion layer 202h may be provided by means of liquid phase processing or a

Vacuum processing be or be.

For example, the adhesion layer 202h may be applied to or over the substrate 302 (eg, entirely or at least partially over the first region 302b of the substrate 302 and the second region 302b of the substrate 302) and subsequently removed from the second region 302b of the substrate 302 For example, by means of an etching process or by laser ablation, in other words, the second region 302b of the substrate 302 can be exposed

Exposing of the second area 302b may be done, for example, by leaving a recess, e.g. in form of a

Through hole 202d, in the adhesion structure 202, e.g. is formed in the adhesive layer 202h or is.

Alternatively, the substrate 302 may be masked, e.g. a shadow mask or stencil, selectively (e.g.

exclusively) on or over the first region 302a of the substrate 302.

FIG. 2E illustrates an optoelectronic device 200e in a cross-sectional view. The optoelectronic component 20 Oe shown in FIG. 2E largely corresponds to the optoelectronic component 200a shown in FIG. 2A, wherein an adhesion structure 202 having an adhesion layer 202h and an anti-adhesion layer 202a is formed on or above the substrate 302. According to various embodiments, the adhesion structure 202 illustrated in FIG. 2E can be formed, for example, by forming the optoelectronic component 200c shown in FIG

Non-stick splint 202a, the adhesive layer 202h is or will be formed over the first region 302a of the substrate 302.

For example, the through-hole 202 d in the

Adhesive structure 202 may be at least partially filled with the adhesive layer 202h, or the adhesive layer 202h may be selectively formed. Alternatively or additionally, the adhesive layer 202h may be at least partially over the

Non-stick layer 202a may be formed (e.g.

over the substrate 302) and then over the non-stick slide 202a, so that the

Non-stick layer 202a is exposed.

Alternatively, the adhesion structure 202 shown in FIG. 2E may be formed, for example, by using the structure shown in FIG

illustrated optoelectronic device 200d is formed, wherein after the formation of the adhesive layer 202h the

Anti-adhesive layer 202a over the second portion 302b of the

Substrate 302 is or will be formed.

For example, the through-hole 202 d in the

Adhesive structure 202 may or may not be filled with the release layer 202a, or the release layer 202a may be or may be selectively formed. Alternatively or additionally, the release layer 202a may be at least partially over the

Adhesive layer 202h may be formed (e.g., over the entire surface of substrate 302) and then removed over adhesive layer 202h so that adhesive layer 202h is exposed.

Fig. 3A illustrates a sectional view of a

organic optoelectronic device 300a according to various embodiments in a method 100 according to various embodiments for producing the organic optoelectronic device 300a. The formation of the organic optoelectronic component 300a includes forming a first electrode 310, forming an organic functional layer structure 312, and forming a second electrode 314, which together form or form part of an active region 306.

The active region 306 is an electrically active region 306 and / or an optically active region 306. The active region 306 is, for example, the region of the organic

Optoelectronic device 300a, in which an electric current flows and an electromagnetic radiation is generated and / or an electric current is generated and in which an electromagnetic radiation is absorbed. According to various embodiments, the first electrode 310, the organic functional layer structure 312 and the second electrode 314 of the organic optoelectronic form

Device 300a, an organic light emitting diode 306 as in

Described below and illustrated in Fig. 3A. The organic light emitting diode 306 is also known as a luminous thin film device of organic semiconducting

Materials and is used to produce

electromagnetic radiation (e.g., light), e.g. when between the first electrode 310 and the second

Electrode 314 an electric current for the operation of

organic optoelectronic device 300a flows through the organic functional layer structure 312 therethrough. The generated electromagnetic radiation can be at least through some layers and components of the organic

optoelectronic component 300a and are emitted away from the organic optoelectronic component 300a, so that the organic optoelectronic component 300a acts as a light source. In other words, the organic optoelectronic device 300a is configured to convert electrical energy into electromagnetic radiation (eg, light).

The first electrode 310 and / or the second electrode 314 are formed such that they have at least one layer. The first electrode 310 and / or the second

Electrode 314 may be formed to have a layer thickness in a range of about 1 nm to about 50 nm, for example less than or equal to about 50 nm, for example a layer thickness of less than or equal to about 45 nm, for example a layer thickness of less than or equal to about 40 nm,

for example, a layer thickness of less than or equal to approximately 35 nm, for example a layer thickness of less than or equal to approximately 30 nm, for example a layer thickness of less than or equal to approximately 25 nm, for example a layer thickness of less than or equal to approximately 20 nm,

For example, a layer thickness of less than or equal to about 15 nm, for example, a layer thickness of less than or equal to about 10 nm.

On or above the substrate 302, the first electrode 310 is formed. The first electrode 310, which is also referred to below as lower electrode 310 or as bottom contact 310

is designated, is formed of an electrically conductive material. The first electrode 310 is formed as an anode, ie as a hole-injecting electrode. The first electrode 310 is formed to have a first electrical contact pad (not shown), wherein a first electrical potential (provided by a power source (not shown), such as a power source or a voltage source) may be applied to the first electrical contact pad. Alternatively, the first electrode 310 may be used for

Applying a first potential to be electrically conductively connected to a first electrical contact pad. The first electrical contact pad (also called Kontaktierungsfläche

designated) may be arranged for electrically conductive contact, e.g. for bonding or soldering. The first electrical potential may be the ground potential or another predetermined reference potential.

According to various embodiments, the first

Electrode 310 may be part of the adhesive structure 202, e.g. For example, the adhesive layer 202h may be formed in the form of an electrode 310 or may be part of the electrode 310. Alternatively, the first electrode 310 may be formed on or over the adhesion structure 202.

On or above the first electrode 310, the organic functional layer structure 312 is formed. The formation of the organic functional layer structure 312 comprises forming an emitter layer 318, for example with fluorescent and / or phosphorescent emitters. On or above the organic functional layer structure

312, the second electrode 314 is formed. The second electrode 314 is used as a cathode, ie as a

electron injecting electrode formed. The second electrode 314 has a second electrical terminal (in other words, a second electrical contact pad) for applying a second electrical potential (which is different from the first electrical potential) provided by the power source. Alternatively, the second electrode 314 for applying a second potential may be electrically conductively connected to a second electrical contact pad. The second electrical contact pad can be set up for electrically conductive contacting, for example for bonding or soldering. The second electrical potential may be a potential different from the first electrical potential. The first electrical potential and the second electrical potential may be used to operate the organic

optoelectronic device 300a, i. when the organic optoelectronic device 300a electromagnetic

Generate radiation from the power source (e.g., a power source such as a power supply or a power source)

Driver circuit) and applied to the first electrical contact pad and the second electrical contact pad. The first electrical potential and the second electrical potential may be an electric current

which flows through the functional layer structure 312 and excites them to generate and emit electromagnetic radiation.

The second electrical potential has a value such that the difference to the first electrical potential (in other words, the voltage applied to the organic

opto-electronic device 300a) has a value in a range of about 1.5V to about 20V

for example, a value in a range of about 2.5V to about 15V, for example, a value in a range of about 3V to about 12V. The power source may be configured to generate this voltage.

The substrate 302 may be provided as a one-piece substrate 302. The substrate 302 may be considered a

monolithic substrate or a multi-layer integrally constructed substrate, wherein the plurality

Layers at the beginning of the method 100 are firmly connected.

The substrate 302 may have various shapes.

For example, the substrate 302 may be in the form of a foil (e.g., a metallic foil or a plastic foil), as one

Plate (eg a plastic plate, a glass plate or a metal plate) may be formed. Alternatively or in addition For example, the substrate 302 may be prismatic, trapezoidal,

be cylindrical, or pyramid-shaped.

Alternatively or additionally, the substrate 302 may comprise at least one flat or at least one curved surface, e.g. a main processing surface on a main processing side of the substrate 302, on or above which the

Layers of the organic optoelectronic device 300a are formed.

The substrate 302 may be formed of an electrically insulating material. The substrate 302 may be formed of glass or may comprise a glass. Alternatively, the substrate 302 may be formed of a plastic or a composite material (e.g., a laminate of multiple foils or a fiber-plastic composite). The plastic comprises or is formed from one or more polyolefins (eg, high or low density polyethylene or PE) or polypropylene (PP). Furthermore, the plastic may be polyvinyl chloride (PVC), polystyrene (PS), polyester and / or polycarbonate {PC),

Polyethylene terephthalate (PET), polyethersulfone (PES) and / or polyethylene naphthalate (PEN), or be formed therefrom. Alternatively or additionally, the substrate 302 may be formed such that it has one or more of the above-mentioned substances. Alternatively or additionally, the substrate 302 may be a quartz and / or a semiconductor material or

have any other suitable substance.

According to various embodiments, the substrate 302 may be electrically conductive. For example, the substrate 302 may be made of an electrically insulating material as above

is described with an electrically conductive

Coating may be formed, wherein the electrically conductive coating, e.g. may be a metallic coating comprising or formed from a metal.

Alternatively, the substrate 302 may comprise or be formed of an electrically conductive material, an electrically conductive polymer, a metal, a transition metal oxide or an electrically conductive transparent oxide. For example, a substrate 302 comprising or made of a metal may be used as a metal foil or a metal foil

be formed metal-coated film. The substrate 302 may be configured to operate during operation of the

organic optoelectronic device 300a conducts electrical current.

If the substrate 302 is formed of metal or other electrically conductive material, the substrate 302 may be used as an electrode, e.g. serve as the lower electrode 310, the organic light emitting diode. The use of a metallic

Substrate 302, which can be coated on all sides

for example, allow a homogeneous power distribution on a rimless component.

Alternatively or additionally, the substrate 302 may be formed of or include a high thermal conductivity material.

Alternatively or additionally, the substrate 302 may be opaque, translucent or even transparent with respect to at least one wavelength range of the electromagnetic radiation, for example in at least one region of the visible light, for example in one

Wavelength range from about 380 nm to 780 nm.

By way of example, when using a transparent and / or translucent substrate 302 and a transparent and / or translucent substrate 302 on both sides, a (semi-) transparent OLED emitting identically on both sides can be realized.

Alternatively or additionally, the substrate 302 is as

Waveguide designed for electromagnetic radiation, for example, it is transparent or translucent with respect to the emitted or absorbed electromagnetic radiation of the organic

optoelectronic component 300a.

Alternatively or additionally, the substrate 302 is part of or forms a mirror structure.

Alternatively or additionally, the substrate 302 has a mechanically rigid area and / or a mechanical one

flexible area up.

Alternatively or in addition to the above description of the organic optoelectronic component 300a, the formation of the layer sequence of the organic

optoelectronic component 300a be configured as described below.

The first electrode 310 may be used as a layer stack

be or be trained. As an alternative to applying the first electrical potential to the first electrode 310, the first electrical potential is or is applied to the substrate 302 and is then indirectly applied (in other words transmitted) to the first electrode 310, e.g. when the substrate 302 is electrically conductive.

Alternatively or additionally, an electrical contact pad may have a plurality of electrical contact pads.

The first electrode 310 may be or may be formed of a metal. In the case that the first electrode 310 includes or is formed of a metal, the first electrode 310 may have a layer thickness

have less than or equal to about 25 nm,

For example, a layer thickness of less than or equal to about 20 nm, for example, a layer thickness of less than or equal to about 18 nm. Alternatively or additionally, the first electrode 310 may be formed or having a layer thickness of greater than or equal to about 10 nm, for example Layer thickness of greater than or equal to about 15 nm. For example, the first

Electrode 310 may be formed so as to have a layer thickness in a range of about 10 nm to about 25 nm, for example in a range of about 10 n to about 18 nm, for example in a range of about 15 nm to about 18 nm .

Alternatively or additionally, the first electrode 310 may be or may be made translucent or transparent. For example, the first electrode 310 may include or may be formed from a conductive conductive oxide (TCO). Transparent conductive oxides are transparent, conductive substances, for example metal oxides, such as, for example, zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide, or indium tin oxide (ITO). In addition to binary metal oxygen compounds, such as ZnO, SnOa, or In ₂ 03 also include ternary metal oxygen compounds such as AIZnO, Zn ₂ Sn0 ₄ , CdSnOa, ZnSn0 ₃ , Mgln ₂ 0 ₄ , Galn0 ₃ , Zn ₂ In ₂ 0 ₅ or In ₄ Sn ₃ 0i ₂ or mixtures of different transparent conductive oxides to the group of TCOs. Furthermore, the TCOs do not necessarily correspond to a stoichiometric composition and may furthermore be p-doped or n-doped, or hole-conducting (p-TCO) or electron-conducting (n-TCO).

Further, in the case where the first electrode 310 has or is formed of a conductive transparent oxide (TCO), the first electrode 310 may have a layer thickness in a range of about 50 nm to about 500 nm, for example, a layer thickness in a range from about 75 nm to about 250 nm, for example, a layer thickness in a range of

about 100 nm to about 150 nm. Alternatively or additionally, the first electrode 310 may be formed by a stack of layers or a combination of a layer of a metal on or over a layer of a TCO be or become, or vice versa. An example is one

Silver layer, which is applied on or above an indium inn-oxide layer (1TO) (Ag on ITO) or ITQ-Ag-ITO multilayers. Alternatively or additionally, the first electrode 310 may comprise or be formed from a layer stack of several layers of the same metal or different metals and / or the same TCO or different TCOs. Alternatively or additionally, forming the organic functional layer structure 312 may include forming one or more emitter layers 318. Several

Emitter layers 318 may, for example, be the same or different from each other.

Alternatively or additionally, the emitter layer 118

organic polymers, organic oligomers, organic

Monomers, organic small, non-polymeric molecules ("small molecules") or a combination of these materials

have or be formed from it.

Alternatively or additionally, the emitter materials may be embedded in a suitable manner in a matrix material. It should be noted that other suitable

Emitter materials can also be provided.

Alternatively or additionally, the emitter materials of the emitter layer (s) 318 of the organic optoelectronic

For example, device 300a may be selected such that organic optoelectronic device 300a emits white light. Alternatively or additionally, the / have the

Emitter layer (s) 318 several different colors (for

Example, blue and yellow or blue, green and red) emitting emitter materials, alternatively is / are the

Emitter layer (s) 318 also constructed of several sub-layers, such as a blue fluorescent emitter layer 318 or blue phosphorescent emitter layer 318, a green phosphorescent emitter layer 318 and / or a red phosphorescent emitter layer 318. By mixing the different colors, the emission of light can result in a white color impression. Alternatively it is

provided in the beam path through these layers

generated primary emission to arrange a converter material which at least partially absorbs the primary radiation and emits secondary radiation of different wavelengths, so that results from a (not yet white) primary radiation by the combination of primary radiation and secondary radiation, a white color impression.

The second electrode 314 may be formed like the first electrode 310 or the second electrode 314 may be generally similar to the first electrode 310

be or be trained. The second electrode 314 may be in accordance with one or more of those described above

Embodiments of the first electrode 310 may or may not be formed. Alternatively, the second electrode 314

be formed differently to the first electrode 310 or be. By way of example, the second electrode 314 is designed as an anode, ie as a hole-injecting electrode.

For example, the first electrode 310 and the second electrode 314 are both translucent or transparent. Thus, the organic optoelectronic device 300a may be used as a top and bottom emitter (otherwise expressed as

transparent light-emitting component) may be formed or be. FIG. 3 B illustrates a schematic cross-sectional view of an organic optoelectronic component 300 b according to various embodiments, for example

largely as shown in Fig. 3A

Embodiment corresponds. As an alternative to the layer sequence illustrated in FIG

optoelectronic component 300b that in Fig. 3b have illustrated layer sequence, which in

Described below.

On or above the substrate 302, the first electrode 310 is formed. On or above the first electrode 310, a hole injection layer is formed (not shown). On or above the hole injection layer is a hole transport layer 316 (also referred to as hole line layer 316).

educated. Further, the emitter layer 318 is formed on or above the hole transport layer 316. A

Electron transport layer 320 (also referred to as

Electron conductive layer 3203 is on or above the

Emitter layer 318 is formed. On or above the

Electron transport layer 320 becomes a

Electron injection layer (not shown) is formed. On or above the electron injection layer, the second electrode 314 is formed.

The layer sequence of the organic optoelectronic

Device 300b is not the one described above

For example, one or more of the above-mentioned layers may be omitted. Furthermore, alternatively, the layer sequence can be or be formed in the reverse order. Further, two layers may be formed as one layer.

The hole injection layer may be formed to have a layer thickness in a range of about 10 nm to about 1000 nm, for example, in a range of about 30 nm to about 300 nm,

for example, in a range of about 50 nm to about 200 nm.

Alternatively or additionally, the optoelectronic

Component 300b have a plurality of hole injection layers. The hole transport layer 316 may be formed to have a layer thickness in a range of about 5 nm to about 50 nm, for example, in a range of about 10 nm to about 30 nm, for example, about 20 nm.

Alternatively or additionally, the optoelectronic

Device 300b have a plurality of hole transport layers 316. The electron transport layer 320 may be formed to have a layer thickness in a range of about 5 nm to about 50 nm, for example, in a range of about 10 nm to about 30 nm, for example, about 20 nm.

Alternatively or additionally, the optoelectronic

Device 300b have multiple electron transport layers 320. The electron injection layer may be formed to have a layer thickness in a range of about 5 nm to about 200 nm, for example, in a range of about 20 nm to about 50 nm, for example, about 30 nm.

Alternatively or additionally, the optoelectronic

Device 300b multiple electron injection layers

exhibit . Alternatively or additionally, the organic

Optoelectronic device 300b may be formed such that it has two or more organically functional layer structures 312, for example a first organically functional layer structure 312 (also referred to as the first organically functional layer structure units) and a second organically functional layer structure 312 (also referred to as the second organic functional

Layer structure units}.

The second organic functional layered structure unit may be over or rubbed of the first functional one

Layer structure unit may be or be formed.

An interlayer structure (not shown) may or may be formed between the organic functional layered structure units,

The interlayer structure may be formed as an intermediate electrode, for example according to one of the configurations of the first electrode 310

Intermediate electrode may be electrically connected to an external power source. The external energy source may provide a third electrical potential at the intermediate electrode. However, the intermediate electrode can also have no external electrical connection, for example by the intermediate electrode having a floating electrical potential.

Alternatively or additionally, the interlayer structure may be used as a charge carrier pair generation layer structure

(charge generation layer CGL) be formed or become. A charge carrier pair generation layer structure comprises one or more electron-conducting charge carrier pair generation layer (s) and one or more hole-conducting ones

Charge pair generation layer (s) on or is formed therefrom. The electron-conducting charge carrier pair generation layer (s) and the hole-conducting charge carrier pair generation layer (s) are each formed of an intrinsically conducting substance or a dopant in a matrix. The charge carrier pair generation layer structure should

in terms of the energy levels of the electron-conducting

The charge carrier pair generation layer (s) and the hole-conducting charge carrier pair generation layer (s) may be formed such that at the interface of an electron-conducting Charge pair generation layer with a hole-conducting carrier pair generation layer can be a separation of electron and hole. Optionally, the charge carrier pair generation layer structure may have a diffusion barrier between adjacent layers.

Alternatively or additionally, the above

Layers may be formed as mixtures of two or more of the above layers.

It is to be noted that, alternatively or additionally, one or more of the above-mentioned layers disposed between the first electrode 310 and the second electrode 314 are optional.

For example, the organically functional

Layer structure 312 may be formed as a stack of two, three or four directly superimposed OLED units or be. In this case, the organic

functional layer structure 312 has a layer thickness of at most about 3 μτη.

In addition, the organic optoelectronic component 300 b can be or be formed such that it optionally has further organic puncture layers (which can consist of organic functional materials),

for example, disposed on or over the one or more emitter layers 318 or on or above the electron transport layer (s) 216 that serve to enhance the functionality and thus the efficiency of the light emitting layer

Device 300b to improve further.

Fig. 3C illustrates a schematic cross-sectional view according to various embodiments of an organic

Optoelectronic device 300c, for example, the largely illustrated in Fig. 3B

Embodiment corresponds. Alternatively to the in Fig. 3 B The layer sequence illustrated can be organic

optoelectronic component 300c, the in Fig.3C

have illustrated layer sequence, which in

Described below.

On or above the substrate 302 and between the substrate 302 and the electrically active region 306 is a

Barrier layer 304 arranged. The substrate 302 and the barrier layer 304 form a hermetically sealed substrate 302. The barrier layer 304 may include or be formed from one or more of the following: alumina, zinc oxide, zirconia, titania, caffeine, tantalum, lanthania, silica, silicon nitride, Silicon oxynitride, indium tin oxide,

Indium zinc oxide, aluminum-doped zinc oxide, poly (p-phenylene terephthalamide), nylon 66, and mixtures and alloys thereof.

According to various embodiments, the

For example, barrier layer 304 may be formed of an electrically insulating material (i.e., an electrical insulator, a so-called insulating layer).

The barrier layer 304 may be formed to have a layer thickness of about 0.1 nm (one atomic layer) to about 1000 nm, for example, a layer thickness of about 10 nm to about 100 nm according to an embodiment, for example about 40 nm according to an embodiment.

The barrier layer 304 can by means of a

Vacuum processing, a liquid phase processing or alternatively be formed by other suitable deposition methods or be.

Alternatively or additionally, the barrier layer 304 may be or may be configured to include a plurality of Partial layers has. In the case of a barrier layer 304, which has a plurality of partial layers, all partial layers, for example. be formed by an atomic layer deposition method or be. A layer sequence comprising only ALD layers may also be referred to as "nanolaminate".

Alternatively or additionally, the barrier layer 304 is formed such that it one or more optically

having high refractive index materials, for example one or more high refractive index materials, for example having a refractive index of at least 2.

Alternatively or additionally, the above

Layers are formed as mixtures of two or more of the above layers.

Alternatively or additionally, one of the herein may be

described organic optoelectronic devices 300c have a color filter and / or a converter structure, which can be arranged above the substrate 302 and / or formed or can be. Through targeted variation of a

Surface of Planar Substrates 302 {Variation of the

Bottom contact 310 or one-sided coating or

Application of a color filter or a converter}, a targeted change in the emission in one direction can be achieved, independently of the emission in the other direction. This applies to non-transparent and (semi-) transparent

Embodiments. According to various embodiments, the

Barrier layer 304 may be part of the adhesive structure 202, e.g. For example, the adhesive layer 202h may be formed in the form of the barrier layer 304 or may be part of the barrier layer 304.

Alternatively, the barrier layer 304 may be formed on or over the adhesion structure 202. FIGS. 4A to 4C each illustrate one

A cross-sectional view of an optoelectronic component according to various embodiments in a method 100 according to various embodiments for producing an optoelectronic component,

The optoelectronic component 400a shown in FIG. 4A largely corresponds to that shown in FIG. 2E

Optoelectronic component 200e, wherein on or above the adhesive structure 202, an optically functional layer structure 312 is formed. The optically functional

Layer structure 312 may be formed over both first region 302a of substrate 302 and over second region 302b of substrate 302.

As an alternative to the optoelectronic component 400a shown in FIG. 4A, the adhesion structure 202 may be formed according to the optoelectronic component 200c illustrated in FIG. 2C or according to the optoelectronic component 200d illustrated in FIG. 2D.

The optoelectronic component 400b shown in FIG. 4B largely corresponds to that shown in FIG. 4A

Optoelectronic component 400a, wherein on or above the optically functional layer structure 312 a

Force transmission layer 402 is formed.

The power switching layer 402 may be at least partially e.g. by means of vacuum processing and / or by means of

Liquid phase processing may be formed or be.

For example, forming the

K aftvermittlungsschicht 402, a Kunsts off, for example, a polymer-based plastic, such as epoxy resin, on or above the optically functional layer structure 312 form, for example, apply, for example, apply. Afterwards, eg afterwards, the plastic can harden and become with of the optically functional layer structure 312. The plastic so cured may then be sufficiently stable to transfer a force 602 to the optically functional layer structure 312, eg, as it is moved away from the substrate 302.

Alternatively or additionally, forming the

Force transmitting layer 402, an adhesion promoter, e.g. a viscous material, an adhesive (e.g., a physically setting adhesive, chemically curing

Adhesive or a pressure-sensitive adhesive}, a polyolefinic adhesion promoter, an organometallic adhesion promoter or a silane coupling agent, on or above the optical

functional layer structure 312, e.g.

to apply, e.g. apply.

Alternatively or additionally, forming the

Force transmitting layer 402, a foil, e.g. a plastic film or metal foil, on or over the optically functional layer structure 312, e.g.

to apply, e.g. stick or otherwise to

Fasten.

For example, the film on or over the

Adhesion promoters are applied, which already on or above the optically functional layer structure 312

is arranged. Alternatively, the primer may be disposed on the film, e.g. be attached, or be and together with the film on the optically functional

Layer structure 312 applied, e.g. be pressed.

For example, the force-transmitting layer 402 may be in the form of a self-adhesive film, e.g. as in the form of a

Adhesive tapes, with acrylate adhesive applied to them,

may be formed, which is pressed against the optically functional layer structure 312 against this for connection. After the force-transmitting layer 402 is connected to the optically functional layer structure 312, it can be separated from the. Substrate 302 are moved away. In this case, a force 602, which is directed away from the substrate 302, can be transferred to the optically functional layer structure 312, such that the optically functional layer structure 312 in a separation region 312g, which lies between a first

Section 312a of the optically functional layer structure 312 and a second section 312b of the optical

functional layer structure 312, is severed, e.g. tears or breaks, and is partially removed from the substrate 302.

The force 602 may be e.g. evenly {e.g. full surface) to the optically functional layer structure 312 or serially, e.g. in sections, e.g. temporally and / or spatially one after the other.

For example, the force-transmitting layer 402 may be torn off the organic optoelectronic device 400b from one side (e.g., an edge) of the substrate 302.

The first portion 312a of the optically functional

Layer structure 312 may be that part of optically functional layer structure 312 which is on or above the

Substrate 302 remains, and the second portion 312 b of the optically functional layer structure 312 may be the part of the optically functional layer structure 312, which is removed from the substrate 302.

The separation area 312g may be along a path 802

along which the first region 302a of the

Substrate 302 and the second portion 302a of the substrate 302 adjacent to each other (compare Fig. 8A). If an adhesive layer 202h and an anti-adhesion layer 202a are used, the

Separation region 312g along a path, along of which the adhesion layer 202h and the release layer 202a adjoin one another. In the adhesion structure 202, a

Through-hole 202d (see Fig.2C and Fig.2D)

The separation region 312g may be formed along an outer boundary (i.e., the edge) of the through-hole 202d

run.

If the power switching layer 402 on the optical

functional layer structure 312, it may or may not be bonded to the optically functional layer structure 312 and thus have an adhesiveness to the optically functional layer structure 312, i. at. the optically functional layer structure 312 adhere.

According to various embodiments, the property of the individual layers to one another can be formed and / or set up as follows:

The adhesion of the optically functional

Layer structure 312 to the adhesion layer 202h

be greater than the adhesion of the

Force transmission layer 402 to the optical

functional layer structure 312. This ensures that the optical

functional layer structure 312 rather of the

Force switching layer 402 triggers as of

Adhesion layer 202h, so that the first portion 312a of the optically functional layer structure 312 remains on or above the adhesion layer 202h when the

Force switching layer 402 is moved away from the substrate 302 and removed.

(b) The adhesiveness of the power imparting layer 402 to the optically functional layer structure 312 may be greater than the adhesiveness of the optically functional layer structure 312 to the non-adhesion layer 202a. This ensures that the optical

functional layer structure 312 rather of the

Non-stick layer 202a triggers as of

Force transmission layer 402, so that the second

Section 312b of the optically functional

Layer structure 312 is removed from the release layer 202a when the force-transfer layer 402 is moved away from the substrate 302.

Thus, the adhesion of the optically functional

Layer structure 312 to the adhesive layer 202h be greater than the adhesion of the optically functional layer structure 312 to the release layer 202a. Thus, the adhesive layer 202h together with the second portion 312b of the optical

Functional layer structure 312 on or above the

Substrate 302 remains, the adhesion of the adhesive layer 202h to the substrate 302 may be greater than or equal to the

Adhesion of the optically functional layer structure 312 to the adhesive layer 202h be.

When the adhesiveness of the release layer 202a to the substrate 302 is greater than or equal to the adhesiveness of the optically functional layer structure 312 to the release layer 202a, the release layer 202a remains the optically functional one upon removal of the second portion 312b

Layer structure 312 on or above the substrate 302.

When the adhesiveness of the non-stick layer 202a to the substrate 302 is smaller than the adhesiveness of the optically functional layer structure 312 to the non-stick layer 202a, the adhesion layer 202a becomes common with the second portion 312b of the optical functional layer structure 312 of FIG

Substrate 302 removed. Alternatively, according to various embodiments, the

Adhesion of the individual layers to each other are designed and / or set up as follows: (a) The adhesion of the optically functional

Layer structure 312 to the adhesion layer 202h may be greater than the adhesion of the

Force transmission layer 402 to the optical

functional layer structure 312.

(b) The adhesiveness of the power imparting layer 402 to the optically functional layered structure 312 may be smaller than the adhesiveness of the optically functional layered structure 312 to the non-adherent layer 202a, when the adhesiveness of the non-adherent layer 202a to the

Substrate 302 is smaller than the adhesion of the optically functional layer structure 312 to the force-transmitting layer 402. Thus, it can be achieved that the non-stick layer 202a together with the second portion 312b of the optical

functional layer structure 312 is removed from the substrate 302. Clearly, it may be sufficient if the non-stick layer 202h adheres poorly only to the substrate 302 or to the optically functional layer structure 312.

The optoelectronic component 400c shown in FIG. 4C largely corresponds to that shown in FIG. 4B

optoelectronic component 400b, wherein the second

Section 312b of the optically functional layer structure 312 is or will be removed from the second region 302b of the substrate 302 together with the force-transmitting layer 402. In the separation region 312g, a side surface 312s of the optically functional layer structure 312 may be formed or which are the optically functional

Layer structure 312 limited.

According to various embodiments, the adhesion layer 202h may be used as an electrode, e.g. as lower electrode 310,

be or be trained. It can thereby be achieved that the optically functional layer structure 312 can be contacted from below without further process steps. Is the non-stick splint 202a upon removal of the second

Section 312b of the optically functional layer structure 312 remained on or above the substrate 302, this may after removing the second portion 312b of the optically functional layer structure 312 in another

Process step (also referred to as a process step), for example by laser ablation, by etching (e.g., piasra etching or chemical etching), or by a suitable solvent in which a material of the release layer 202a is soluble.

According to various embodiments, a contact pad (not shown), e.g. a contact pad of the first electrode 310 or the second electrode 314 (compare FIGS. 3A to 3C) may be formed over the second region 302b of the substrate 302. For example, that can

Contact pad by removing the optically functional

Layer structure 312 may be exposed over the second portion 302 b of the substrate 302 or. For example, at least one contact pad of the first electrode 310 and / or the second electrode 314 may be exposed by removing the optically functional layer structure 312 according to various embodiments.

FIGS. 5A to 5C each illustrate one

Cross-sectional view of an optoelectronic component according to various embodiments in a method 100 according to various embodiments for producing an optoelectronic component.

The optoelectronic component 500a shown in FIG. 4A largely corresponds to that shown in FIG. 4A

Optoelectronic component 400a, wherein on or above the optically functional layer structure 312, a sacrificial layer 502 is or is formed. The sacrificial layer 502 may be over both the first region 302a of the substrate 302 and the second region 302b of the substrate 302

be or be trained.

The sacrificial layer 502 may illustratively be a layer poorly adherent to or over the optically functional layer structure 312.

The sacrificial layer 502 may be at least partially e.g. by vacuum processing and / or by means

Liquid phase processing may be formed or be.

For example, forming the sacrificial layer 502 may include a layer of plastic, e.g. from a polymer-based plastic, e.g. Epoxy resin, lacquer or polyamide, of a metal or of a ceramic on or above the optically functional layer structure 312

form, e.g. applied. Alternatively, forming the sacrificial layer 502 may include multiple such layers over or over or over the optical one

functional layer structure 312, e.g.

applied.

Alternatively or additionally, the formation of the

Sacrificial layer 502, an adhesion promoter, for example, an adhesive, as described above, on or above or above the optically functional layer structure 312 form, for example, apply, for example, apply. Alternatively or additionally, forming the

Have sacrificial layer 502, the optically functional

Layer structure partially cover, so that the

Sacrificial layer reduces the contact (or the contact surface) between the force-transmitting layer and the optically functional layer structure and thus the adhesion of the force-transmitting layer to the optically functional

Layer structure reduced. For example, the

Sacrificial layer particles, e.g. have anoparticles. In this example, the adhesion of the sacrificial layer to the optically functional layer structure may be negligible, e.g. less than the adhesion of the release layer 202a to the optically functional layer structure 312 and / or the substrate 302.

The in Fig. 5B, the optoelectronic component 500b largely corresponds to that shown in FIG. 5A

Optoelectronic component 500a, wherein on or above the sacrificial layer 502, a force-transmitting layer 402

is trained. In other words, the optoelectronic component 500b shown in FIG. 5B largely corresponds to the optoelectronic component 400b illustrated in FIG. 4B, wherein the sacrificial layer 502 is arranged between the optically functional layer structure 312 and the force-transmitting layer 402.

According to various embodiments, the adhesion of the individual layers to one another can be designed or set up as follows:

(a) The adhesion of the force-transmitting layer 402 to the sacrificial layer 502 may be greater than the adhesion of the sacrificial layer 502 to the optically-functional

Layer structure 312.

As a result, the sacrificial layer 502 is rather reached by the optically functional layer structure 312 dissolves than the force-transmitting layer 402, so that the sacrificial layer 502 together with the

Force-transmitting layer 402 of the. Substrate 302 is moved away and removed.

(b) The adhesion of the optically functional

Layer structure 312 to the adhesion layer 202h may be greater than the adhesion of the sacrificial layer 502 to the optically functional layer structure 312,

It is thereby achieved that the sacrificial layer 502 dissolves from the optically functional layer structure 312 rather than the optically functional layer structure 312 from the adhesion layer 202h, so that the first portion 312a of the optically functional layer structure 312 remains on or above the adhesion layer 202h, if the

Force switching layer 402 is moved away from the substrate 302 and removed.

The adhesion of the sacrificial layer 502 to the optically functional layer structure 312 may be greater than the adhesion of the optically functional

Layer structure 312 to the non-stick 202a and / or greater than the adhesion of the

Non-stick layer 202a to the substrate 302.

This ensures that the optical

functional layer structure 312 rather of the

Non-stick layer 202a or that the non-stick layer 202a dissolves the substrate 302 rather than the optically

functional layer structure 312 of the sacrificial layer 502 such that the second portion 312b of the optically functional layer structure 312 of FIG

Non-stick layer 202a or together with the

Non-stick layer 202a is removed from the substrate 302 when the sacrificial layer 502 together with the Force switch rail 402 is moved away from the substrate 302 and removed.

Thus, the adhesion of the optically functional layer structure 312 to the adhesion layer 202h may be greater than the adhesion of the optically functional layer structure 312 to the release layer 202a.

According to various embodiments, the

Adhesiveness of the force-transmitting layer 402 to the

Sacrificial layer 502 may be greater than the adhesion of optically functional layer structure 312 to adhesion layer 202h.

Illustratively, using the sacrificial layer 502, a force-transfer layer 402 may be used that would later detach from the optically-functional layer structure 312 than the optically-functional layer structure 312 of the adhesion layer 202h, since the sacrificial layer 502 would be the

Bonding of the power transmission layer 402 to the optically functional layer structure 312 defined.

For example, it can be achieved that the first

Adhesion of the optically functional layer structure 312 to the first region 302a of the substrate 302 is greater than the second adhesion of the optically functional

Layer structure 312 to the second region 302b of

Substrate 302, when the adhesion of the non-stick layer 202a to the substrate 302 or to the optically fnktionellen

Layer structure 312 is smaller than the adhesion of the optically functional layer structure 312 to the

Adhesive layer 202h.

Analogously to the scheme described above, the adhesion of the optically functional layer structure 312 to the

Substrate 302 may be greater than the adhesion of the optically functional layer structure 312 to the non-stick layer 202a, if, for example, no adhesive layer 202h is used

(compare Fig.2C).

Substrate 302 may be less than the adhesion of the optically functional layer structure 312 to the adhesion layer 202h, e.g. no release layer 202a is used

(compare Fig. 2D).

The optoelectronic component 500c shown in FIG. 5C largely corresponds to that shown in FIG. 4C

optoelectronic component 400c, wherein the second

Section 312b of the optically functional layer structure 312 is removed from the second region 302b of the substrate 302 together with the force-transmitting layer 402 and the sacrificial layer 502.

FIGS. 6A and 6B each illustrate one

A cross-sectional view of an optoelectronic component according to various embodiments in a method 100 according to various embodiments for producing an optoelectronic component. If the sacrificial layer 502 is not removed without leaving any residue, it can be subsequently removed completely in a further method step, for example by means of

Laser ablation, by etching (e.g., plasma etch or

chemical etching) or by means of a suitable

Solvent in which a material of the sacrificial layer 502 is soluble.

6A illustrates an optoelectronic device 600a in a cross-sectional view, wherein an adhesion structure 202 is formed on or above a substrate 302, the substrate 302 having a first region 302a and a second region 302b having. Over the region 302a and the second region 302b, an optically functional layer structure 312 is formed.

In other words, the optically functional

Layer structure 312 over the first region 302a of the

Substrate 302 and over the second region 302b of the substrate 302.

The adhesion structure 202 may be formed such that a first adhesion of the optically functional

Layer structure 312 to the first region 302a is greater than a second adhesion of the optically functional

Layer structure 312 to the second region 302b. Fig. FIG. 6B illustrates an optoelectronic device 600b in a cross-sectional view, wherein a part of the optically functional layer structure 312 {also as the second

Section 312b of the optically functional layered structure 312) is removed over the second region 302b of the substrate 302, or by applying a force 602 directed away from the substrate 302 to the optically functional one

Layer structure 312 is transmitted. The force 602 may be transferred to the entire optically functional layer structure 312.

For example, the force 602 may be detected by movement of the optoelectronic device 600b, e.g. in form of a

Centrifugal force generated by means of an air flow (which is generated for example by a blower).

Figs. 7A and 7B each illustrate one

Cross-sectional view of an optoelectronic component according to various embodiments in a method 100 according to various embodiments for producing an optoelectronic component. FIG. 7A illustrates an optoelectronic component 700a in a cross-sectional view. The optoelectronic component 700a illustrated in FIG. 7A largely corresponds to the optoelectronic component 600a illustrated in FIG. 6A, on or above the optically functional component

Layer structure 312, a force-transmitting layer 402 is formed.

The power transmission layer 402 may be configured to transmit a force 602 to the optically functional layer structure 312.

FIG. 7B illustrates an optoelectronic component 700b in a cross-sectional view. The optoelectronic component 700b illustrated in FIG. 7B largely corresponds to the optoelectronic component 700a illustrated in FIG. 7A, wherein part of the force-transfer layer 402 is moved away from the substrate 302. According to various embodiments, the

Force-transfer layer 402 is moved from one side (i.e., with a component of movement in the lateral direction, i.e., in a lateral direction) in sections away from substrate 302, e.g., by manipulator or by hand, with force 602 applied to the optically functional one

Layer structure 312 is transmitted. In this case, e.g. peeling off the optically functional layer structure 312 from the edge of the substrate 302, e.g. For example, a detachment of the optically functional layer structure 312 from the edge of the optically functional layer structure 312 may take place, for example, in the direction of a center of the substrate 302. towards a center of optically functional

Layer structure 312. In other words, the force 602 can be transferred in sections, for example temporally and / or spatially successively, to the optically functional layer structure 312, eg on a first portion 312a of the optically functional layer structure 312 after the force 602 has been transferred to a second portion 312b of the optically functional layer structure 312. Alternatively or additionally, eg

subsequently, the force 602 may be applied to a second section 312 b of the optically functional layer structure 312

after the force 602 has been transferred to a first portion 312a of the optically functional layer structure 312.

For example, the force 602 may be generated externally, e.g. by means of a manipulator (not shown) to which the force-transmitting layer 402 is attached.

For example, the force-transmitting layer 402 may be fastened to an end section of the force-transmitting layer 402 on a gripper of the manipulator. Alternatively or additionally, the force-transmitting layer 402 may be wound up, e.g. on a roll {not shown). The manipulator may be connected to a sensor (not shown) which provides feedback to the controller (not shown) about the progress of the detachment, e.g. in the form of information about a counter force acting on the manipulator, or in the form of graphic information about the state of detachment of the optical

functional layer structure 312 from the substrate 302. The controller may then control movement of the manipulator, e.g. generating and transmitting the force 602 to the

Force switching layer 402 control or regulate

Basis of information.

FIGS. 8A and 8B each illustrate a top view of an optoelectronic component according to various embodiments in a method 100 according to various embodiments for producing an optoelectronic component. Fig. 5A illustrates an organic optoelectronic

Device 800a, e.g. analogous to that in Fig. 7A

illustrated organic optoelectronic device 700a, analogous to the illustrated in FigSB organic optoelectronic device 500b and / or analogous to the illustrated in Fig. 4B organic optoelectronic

Component 400b. above the substrate 302 (hidden in this view) and the optically functional layer structure 312 (in this FIG

View hidden) is arranged a power transmission layer 402, as described above. Between the optically functional layer structure 312 and the substrate 302, an adhesive structure (concealed in this view) can be arranged as described above.

The substrate 302 has at least a first region 302a and a second region 302b, which adjoin one another along a path 804. The separation region 312g of the optically functional layer structure 312 is disposed above the path 804.

Fig. SB illustrates an organic optoelectronic

Component 800b, The optoelectronic component 800b shown in Fig. SB corresponds largely to that in Fig. 8A

illustrated optoelectronic component 800a, wherein the power transmission layer 402 and a part of the optical

functional layer structure 312 are removed over the second region 302b of the substrate 302.

When the power switching layer 402, which is e.g. may be formed in the form of an adhesive tape, moved away from the substrate 302, the optically functional layer structure 312 in the separation region 312g may be severed or become, e.g. tearing so that a portion of the optically functional layer structure 312 over the second region 302b of the

Substrate 302 together with the power switching layer 402 Will get removed. By removing the part of the optically functional layer structure 312, a

Through opening 802d in the optically functional

Layer structure 312 which extends over the second region 302b substrate 302 and which exposes the second portion 302b of the substrate 302 or the adhesive structure (not shown) at least partially

uncovered. In this case, an irregular surface structure may be formed, e.g. an irregular surface structure of a side surface 312s of the optically functional layer structure 312, which delimits the optically functional layer structure 312. The side surface 312s may define an edge of the optically functional layer structure 312.

FIG. 8C illustrates a detail view 802 of the organic optoelectronic device 800b illustrated in FIG. 8B.

The side surface 312s may be in the form of a cracked edge of the optically functional layered structure 312 and may be formed on the surface of the substrate 302, e.g. the

The main processing surface of the substrate 302 projects, having an irregular (e.g., random) contour, e.g. a f aktal-like contour. In other words, the optically functional layer structure 312 may include a

having irregular shaped edge. For example, the optically functional layer structure 312 may partially overlap the path 804.

Illustratively, the optically functional

Layer structure 312 be frayed in the separation region 312g, eg by tearing off. If the optically functional layer structure 312 is severed, the separation region 312 g can also be referred to as a transition region in which the optically functional layer structure 312 not edgy, sharp-edged, or abruptly terminates (ie ends).

Fig. 8D illustrates that illustrated in Fig. 5B

organic optoelectronic device 800b in a

Cross-sectional view.

The irregularly shaped surface structure of the optically functional layer structure 312 in the separation region 312g may be defined, for example, by a first surface of the optically functional layer structure 312, which may be e.g. to the substrate 302 or to the adhesion structure {not shown), to one of the first surface

opposite second surface of the optically

functional layer structure 312.

The side surface 312s may extend across the surface of the substrate 302 {e.g. the main processing surface) or at an angle, e.g. at an angle in a range of about 45 ° to about 90 °, e.g. in a range of about 55 ° to about 80 °, e.g. in a range of about 65 ° to about 70 °. In other words, the side surface 312s of the optically functional layer structure 312 may be skewed, e.g. or the optically functional layer structure 312 may have a chamfer in the separation region 312g.

For example, the side surface 312s may be shaped analogous to a fracture surface.

The side surface 312s may, for example, have a matrix roughness in a range of about 0.01 pm to about 0.5 pm, for example in a range of about 0.02 pm to about 0.2 μm, for example in a range of about 0.05 pm to about 0.1 pm. Further, by severing the optically functional layer structure 312, micro-cracks may be formed which extend from the side surface 312s into the optically functional layer structure 312, eg, having a length in a range from about 1 nm to about 1 μm, eg, in one Range from about 10 nm to about 100 nm.

Claims

claims

Method (100) for producing an optoelectronic component (400c, 500c, 600b, 700b, 800b}, the

Method comprising:

Forming an adhesive structure (202) over one

Substrate (302), the substrate (302) having a first region (302a) and a second region (302b);

• forming an optically functional

Layered structure (312) over the first region (302a) and the second region (302b);

Wherein the adhesive structure (202) is or is formed such that a first adhesion of the optically functional layer structure (312) to the first region (302a) is greater than a second adhesion of the optically functional one

Layered structure (312) to the second region (302b); and

• removing part of the optically functional

Layered structure (312) over the second region (302b) by transferring a force (602) directed away from the substrate (302) to the optically functional layered structure (312);

Wherein the adhesive structure (202) has an adhesive layer formed over the first region (302a) which remains over the substrate (302) upon removal of the portion of the optically functional layer structure (312).

The method (100) of claim 1, further comprising: forming a force-imparting layer (402) over the optically-functional layered structure (312), wherein the force (602) is responsive to the optically-functional

Layer structure (312) is transferred by the force transmission layer (402) is moved away from the substrate (302). Method {100} according to claim 2,

wherein an adhesion of the force-transmitting layer (402) to the optically-functional layered structure (312) is less than the first adhesion and greater than the second adhesion.

The method (100) of any one of claims 2 to 3, further comprising:

Forming a sacrificial layer (502) between the

Force transmission layer (402) and the optical

functional layered structure (312), wherein a

Adhesiveness of the sacrificial layer (502) to the optically functional layered structure (312) is less than the first adhesion and greater than the second adhesion.

Method (100) according to claim 4,

wherein an adhesion of the sacrificial layer (502) to the force-transfer layer (402) is greater than one

Adherence of the sacrificial layer (502) to the optically functional layered structure (312).

Method (100) for producing an optoelectronic component (400c, 500c, 600b, 700b, 800b), the

Method comprising:

Forming an adhesive structure (202) over one

• forming an optically functional

Wherein the adhesive structure (202) is or is formed such that a first adhesion of the optically functional layer structure (312) to the first region (302a) is greater than a second one Adhesiveness of the optically functional

Layered structure (312) to the second region (302b); and

• Removing a part of the optical fibers

Forming a force imparting layer (402) over the optically functional layer structure (312), wherein the force (602) is transferred to the optically functional layer structure (312) by moving the force imparting layer (402) away from the substrate (302);

Forming a sacrificial layer (502) between the

Force transmitting layer (402) and the optically functional layered structure (312), wherein an adhesion of the sacrificial layer (502) to the optically functional layered structure (312) is smaller than the first adhesiveness and greater than the second adhesiveness.

Method (100) according to claim 6,

wherein the adhesive structure (202) is one over the first

Has area (302 a) formed adhesive layer (202 h)

Method (100) according to one of claims 1 to 5 or claim 7,

wherein the adhesive layer (202h) is formed as an electrode (310), which is the optically functional

Layer structure (312) contacted electrically.

A method (100) according to any one of claims 1 to 8, wherein the adhesive structure (202) comprises an anti-adhesion layer (202a) formed over the second region (302b). Method (100) according to claim 9,

wherein the release layer (202a) comprises a perfluorinated polymer.

Method (100) according to claim 9 or 10,

wherein the release layer (202a) comprises a perfluorinated self-assembling monolayer.

The method (100) according to any one of claims 1 to 8, wherein the adhesive structure (202) has a recess (202d) over the second region (302b) exposing the substrate (302).

Optoelectronic component (400c, 500c, 600b, 700b,

800b) comprising:

A substrate (302) having at least a first region (302a) and a second region (302b) which are along a path (804)

adjoin each other;

• one above the substrate (302) arranged

Adhesive structure (202);

An optically functional layer structure (312) arranged above the adhesion structure (202), which is used to convert electrical energy into

electromagnetic radiation or for converting electromagnetic radiation into electrical energy, wherein the second region (302b) is free of the optically functional layer structure (312), - and

Wherein the optically functional layer structure (312) above the P ad (804) has a separation region (312g) in which the optically functional

Layer structure (312) is severed and has an irregular contour.