WO2017021372A1 - Composant optoélectronique organique et procédé de fabrication d'un composant optoélectronique organique - Google Patents

Composant optoélectronique organique et procédé de fabrication d'un composant optoélectronique organique Download PDF

Info

Publication number
WO2017021372A1
WO2017021372A1 PCT/EP2016/068335 EP2016068335W WO2017021372A1 WO 2017021372 A1 WO2017021372 A1 WO 2017021372A1 EP 2016068335 W EP2016068335 W EP 2016068335W WO 2017021372 A1 WO2017021372 A1 WO 2017021372A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
dielectric barrier
barrier layer
layer structure
layer
Prior art date
Application number
PCT/EP2016/068335
Other languages
German (de)
English (en)
Inventor
Michael Popp
Richard Baisl
Original Assignee
Osram Oled Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Oled Gmbh filed Critical Osram Oled Gmbh
Publication of WO2017021372A1 publication Critical patent/WO2017021372A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/816—Multilayers, e.g. transparent multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations

Definitions

  • the invention relates to an organic optoelectronic component and to a method for producing an organic optoelectronic component.
  • organic optoelectronic components are finding increasing popularity.
  • organic light-emitting diodes organic light-emitting diode (OLED) are increasingly being used in general lighting, for example as area light sources.
  • OLED organic light-emitting diode
  • An organic optoelectronic component for example an OLED, may comprise an anode and a cathode and, between them, an organic functional layer system.
  • the organic functional layer system may include one or more emitter layers in which electromagnetic radiation is generated, a charge carrier pair generation layer structure of two or more each
  • Charge pair generation charge carrier pair generation layers CGL
  • one or more electron block layers also referred to as hole transport layer (HTL)
  • one or more hole blocker layers also referred to as electron transport layers
  • electron transport layer w - ETL electron transport layers
  • Illuminating picture can lead.
  • thin metallic busbars are formed on the respective electrodes. These busbars are highly conductive lead structures and increase current carrying capacity compared to using a corresponding electrode without busbars. The busbars contribute to a sufficient amount of busbars.
  • the busbars can be formed for example by means of sputtering or in a PVD method and one or more subsequent lithography processes.
  • the busbars may include or be formed of metal layer structures such as alternating layers of Cr-Al-Cr or Mo-Al-Mo, or single layers of, for example, copper. These structures are coated with an organic insulator, in particular a resist, for example with synthetic resin, in order to effect a charge carrier injection of the
  • Lifespan of OLED can be reduced and / or a Leucht moraleinengung and / or a pixel shrinkage can take place, in which the luminous surface of the OLED over time becomes darker inwardly from the edge.
  • An object of the invention is to provide an organic compound
  • Optoelectronic device to provide a uniform luminance distribution and a uniform Luminous image has over its optically active surface and has a long life.
  • An object of the invention is to provide a method for
  • organic optoelectronic device in operation has a uniform luminance distribution and a uniform luminous image over its optically active surface and has a long life.
  • an organic optoelectronic component having a substrate which has at least one first electrode, a dielectric insulator layer structure which is arranged on the substrate and which is in direct physical contact with the first electrode, a dielectric Barrier layer, which is formed directly on the insulator layer structure and at least partially directly on the first electrode and the lateral side surfaces of the
  • Insulator layer structure covered, an organic compound
  • Substrate in cooperation completely enclose and / or embed the insulator layer structure, at least in the region of the organic functional layer structure.
  • planar overmolding of the insulator layer structure reduces and / or prevents leakage of decomposition products of the material of the insulator layer structure during production of the organic optoelectronic component and during operation of the organic optoelectronic component.
  • Optoelectronic device can be increased because on the substrate existing particles of the dielectric
  • Barrier layer can be enclosed and then less or no longer harmful, resulting in a yield in the production of organic optoelectronic
  • Component can be increased.
  • the material having the insulator layer structure or of which the insulator layer structure is formed may be, for example, an organic material, in particular, an organic resist, in particular, a synthetic resin.
  • the material of the dielectric barrier layer is designed to be electrically insulating.
  • the dielectric barrier layer may be formed so thin that its electrical function, in particular its electrically insulating function is not or at least approximately not given.
  • the dielectric barrier layer may be formed so thin that at least theoretically charge carriers can tunnel through them unhindered or at least almost unhindered. The dielectric barrier layer thus essentially serves to prevent the outgassing of
  • the substrate has a first contact section which is electrically connected to the second
  • Electrode is coupled and the for electrical contacting the second electrode is used.
  • An insulator layer structure has a first isolation barrier that electrically isolates the first electrode from the first contact portion.
  • the dielectric barrier layer is formed directly on the first isolation barrier and covers lateral side surfaces of the first
  • the first isolation barrier is completely enclosed by the substrate and the dielectric barrier layer, at least in the region of the organic functional layer structure. This helps to prevent decomposition materials of the material from outgassing the first isolation barrier and penetrating into the overlying and / or adjacent organic functional layer structure.
  • the first contact portion may be completely or partially covered by the dielectric barrier layer.
  • the dielectric barrier layer is formed so thinly over the first contact section that, when the first contact section is electrically contacted via the dielectric barrier layer, charge carriers from the first contact section through the dielectric contact layer
  • Contact portion with the dielectric barrier layer may help to reduce or prevent oxidation of the first contact portion.
  • the material having the first isolation barrier or of which the first isolation barrier is formed may, for example, be an organic material, in particular an organic resist, in particular synthetic resin.
  • the material of the first insulation barrier is designed to be electrically insulating.
  • the substrate has a
  • the dielectric Insulator layer structure has insulator layers formed directly on the power distribution structure and covering the lateral side surfaces of the power distribution structure.
  • the dielectric barrier layer is formed directly on the insulator layers and covers lateral
  • the material of the power distribution structure has a high electrical conductivity.
  • Insulator layers serve to prevent
  • the power distribution structure may include one or more busbars and / or busbars each covered by one of the insulator layers.
  • the current distribution structure is covered by the insulator layers and the insulator layers are of the first electrode and the dielectric
  • Barrier layer completely enclosed, at least in the area of the organic functional layer structure. This helps to prevent decomposition materials of the material of the insulator layers from outgassing and penetrating into the overlying and / or adjacent organic functional layer structure.
  • the material having the insulator layers or of which the insulator layers are formed may be, for example, an organic material, in particular an organic resist, in particular synthetic resin.
  • Insulator layers is formed electrically insulating.
  • the dielectric barrier layer covering the insulator layers may be made so thin as to be
  • the dielectric barrier layer has thus substantially the effect of preventing decomposition of the material of the insulator layers in the surrounding organic functional layer structure
  • the substrate has a second contact section, which is electrically coupled to the first electrode and which serves for electrically contacting the first electrode.
  • a second isolation barrier may be formed between the second contact section and the organic functional layer structure and / or the second electrode.
  • the second isolation barrier may be covered by the dielectric barrier layer, whereby outgassing of decomposition substances from the second
  • Isolation barrier can be prevented and / or reduced.
  • the second contact portion may be completely or partially covered by the dielectric barrier layer.
  • the dielectric barrier layer is made so thin above the second contact section that, when the second contact section is electrically contacted via the dielectric barrier, charge carriers from the second contact section pass through the dielectric layer
  • Contact portion with the dielectric barrier layer may help to reduce or prevent oxidation of the second contact portion.
  • the material having the second isolation barrier or of which the second isolation barrier is formed may be, for example, an organic material.
  • the material of the second isolation barrier is designed to be electrically insulating. According to a development, the dielectric
  • the dielectric barrier layer is formed so thin that in the operation of the organic optoelectronic device on the
  • dielectric barrier layer can tunnel charge carriers from the first electrode through the dielectric barrier layer to the organic functional layer structure or in the opposite direction.
  • the covering of the first electrode with the dielectric barrier layer may contribute to the formation of the dielectric
  • Barrier layer is particularly simple, since the dielectric barrier layer has little or no structure.
  • the substrate has the first electrode and optionally the first and / or the second contact section and / or optionally the first and / or second insulation barrier and / or optionally the current distribution structure and the
  • the substrate may be understood as the basis on which the organic functional layer structure is formed.
  • the first electrode, the contact portions, the insulator layers and / or the isolation barriers can each via
  • the first electrode itself may serve as a carrier.
  • Covering the substrate with the dielectric barrier layer may help to make the formation of the dielectric barrier layer particularly easy because the dielectric barrier layer is easily formed over the entire area and does not need to be patterned. According to a development, the dielectric
  • Barrier layer has a thickness of from 0.1 nm to 20 nm
  • the dielectric Barrier layer no or at least only one
  • Barrier layer A1 2 0 3 Ti0 2 , ZrQx, ZnQx, HfOx and / or Alucone, Titanocone or a self-oxygenating monolayer (Seif Assembling Mono layer - SAM) on or is formed from it.
  • the object is achieved according to a further aspect of the invention by a method for producing an organic optoelectronic component.
  • the substrate having at least the first electrode,
  • the dielectric insulator layer structure is formed on the substrate in direct physical contact with the first electrode.
  • Barrier layer is formed directly on the insulator layer structure and at least partially directly on the first electrode so that they lateral side surfaces of the
  • Insulator layer structure covered.
  • the organic functional layer structure is formed over the first electrode and on the dielectric barrier layer.
  • the substrate may be deposited prior to application of the dielectric
  • the substrate is formed so that it has the first contact portion which is electrically coupled to the second electrode and the
  • the dielectric insulator layer structure is formed to have the first isolation barrier electrically insulating the first electrode from the first contact portion.
  • the dielectric barrier slab is formed directly on the first isolation barrier so as to cover lateral side surfaces and a vertical surface of the first isolation barrier.
  • the substrate is formed so that it has the current distribution structure which is formed directly on the first electrode.
  • Insulator layer structure is formed so that they
  • Power distribution structure are formed and cover the lateral side surfaces of the power distribution structure.
  • the dielectric barrier layer is directly on the
  • Insulator layers are formed so that they are lateral
  • Barrier layer formed in an ALD method, an MLD method, an MVD method or a PECVD method is formed in an ALD method, an MLD method, an MVD method or a PECVD method.
  • the dielectric remains
  • Isolator layer structure after its formation for a predetermined period of time before the dielectric Barrier layer is formed on it. This causes a particularly large number of decomposition substances to be formed from the material prior to the formation of the dielectric barrier layer
  • Can outgas isolator layer structure This contributes to the fact that a probability that decomposition substances can penetrate into the organic functional layer structure after the formation of the dielectric barrier layer is particularly low.
  • the predetermined period of time can be
  • the substrate and / or the insulator layer structure are heated before and / or during the application of the dielectric barrier layer.
  • the substrate or the insulator layer structure can be opposite to one another
  • Room temperature have significantly elevated temperature. This can help to keep a density of the dielectric
  • the temperature for the production of the thin dielectric barrier layer for example, from A1 2 0 3 and / or produced in an ALD method, for example, with a thickness of 4 nm to 6 nm, to achieve a particularly dense barrier layer
  • Insulator layer structure are present, whereby a
  • a quality of the first electrode in particular if it has a TCO layer or is formed thereof, can be improved by means of the elevated temperature. Further improvement can be achieved by adding oxygen just prior to the application of the dielectric barrier layer.
  • Figure 1 is a sectional view of an embodiment of an organic optoelectronic device
  • Figure 2 is a sectional view of an embodiment of an organic optoelectronic device
  • Figure 3 is a sectional view of an embodiment of an organic optoelectronic device
  • Figure 4 is a sectional view of an embodiment of an organic optoelectronic device
  • Figure 5 is a sectional view of an embodiment of an organic optoelectronic device
  • Figure 6 is a sectional view of an embodiment of an organic optoelectronic device
  • FIG. 7 shows a detailed representation of an exemplary embodiment of an organic optoelectronic component
  • FIG. 8 shows a detailed representation of an exemplary embodiment of an organic optoelectronic component
  • FIG. 9 shows an example of a voltage-luminous intensity diagram
  • Figure 10 is an example of a voltage-current density diagram
  • Fig. 11 is an example of a voltage-luminous efficiency diagram
  • FIG. 12 is a flowchart of an embodiment of a
  • Orientations can be positioned, the serves
  • An organic optoelectronic component may emit an organic electromagnetic radiation
  • Electromagnetic radiation absorbing device may for example be a solar cell.
  • electromagnetic radiation emitting device can be an organic electromagnetic radiation emitting semiconductor device and / or as a organic electromagnetic radiation emitting diode or as an organic electromagnetic radiation emitting
  • the radiation can be formed.
  • the radiation can be formed.
  • Component for example, as an organic light emitting diode (Organic Light Emitting Diode, OLED) or as an organic light emitting diode (Organic Light Emitting Diode, OLED) or as an organic light emitting diode (Organic Light Emitting Diode, OLED) or as an organic light emitting diode (Organic Light Emitting Diode, OLED) or as an organic light emitting diode (Organic Light Emitting Diode, OLED) or as OLED.
  • OLED Organic Light Emitting Diode
  • Fig. 1 shows an embodiment of an organic optoelectronic device 1.
  • Optoelectronic component 1 has a carrier 12.
  • the carrier 12 may be translucent or transparent.
  • the carrier 12 serves as a carrier element for electronic
  • the carrier 12 may be, for example, plastic,
  • the carrier 12 may comprise or be formed from a plastic film or a laminate with one or more plastic films.
  • the carrier 12 may be mechanically rigid or mechanically flexible.
  • Layer structure has a first electrode layer 14, which has a first electrode 20.
  • a first electrode layer 14 which has a first electrode 20.
  • Contact section 16 and a second contact section 18 are formed laterally outside on the first electrode layer 14. Between the carrier 12 and the first
  • Electrode layer 14 may be formed a first barrier thin film.
  • the first electrode 20 is electrically conductive from the first contact portion 16 by means of a first isolation barrier 21 isolated.
  • the second contact section 18 is connected to the first electrode 20 of the optoelectronic layer structure
  • the first electrode 20 may be formed as an anode or as a cathode.
  • the first electrode 20 may be translucent or transparent.
  • the first electrode 20 comprises an electrically conductive material, for example metal and / or a conductive conductive oxide (TCO) or a
  • the first electrode layer 14 and in particular the first electrode 20 may, for example, a
  • the first electrode layer 14 and in particular the first electrode 20 may comprise, as an alternative or in addition to the mentioned materials: networks of metallic nanowires and particles, for example of Ag, networks of carbon nanotubes, graphene particles and layers and / or networks of semiconducting nanowires.
  • an organic functional layer structure 22 of the optoelectronic layer structure is formed over the first electrode 20, an organic functional layer structure 22 of the optoelectronic layer structure is formed.
  • the organic functional layer structure 20 is formed adjacent to the first isolation barrier 21 and a second isolation barrier 23.
  • the organic functional layer structure 22 may be at least partially over the first and / or second
  • the organic functional layer structure 22 may, for example, have one, two or more partial layers.
  • the organic functional layer structure 22 may be a
  • Hole injection layer a hole transport layer, a hole transport layer, a hole transport layer, a hole transport layer, a hole transport layer, a hole transport layer, a hole transport layer, a hole transport layer, a hole transport layer, a hole transport layer, a hole transport layer, a hole transport layer, a hole transport layer, a hole transport layer, a hole transport layer, a hole transport layer, a hole transport layer, a hole transport layer, a
  • Emitter layer an electron transport layer and / or an electron injection layer.
  • Hole injection layer serves to reduce the band gap between the first electrode and hole transport layer.
  • the hole conductivity is larger than the electron conductivity.
  • the hole transport layer serves to transport the holes.
  • the electron conductivity is larger than that
  • the electron transport layer serves to transport the electrons.
  • Electron injection layer serves to reduce the
  • the organic functional layer structure 22 may be one, two or more
  • Layer structure is formed, which is electrically coupled to the first contact portion 16.
  • Contact section 18 is of the organic functional
  • the second electrode 23 may be formed according to any of the configurations of the first electrode 20, the first one
  • Electrode 20 and the second electrode 23 is equal to or
  • the first electrode 20 serves, for example, as the anode or cathode of
  • the second electrode 23 serves as a cathode or anode of the optoelectronic layer structure corresponding to the first electrode.
  • Carrier 12 with the first electrode layer 14, that is to say with the first electrode 20, the first contact section 16, the second contact section 18 and with the isolation barriers 21, 23 may be referred to as the substrate.
  • the optoelectronic layer structure is an electrically and / or optically active region.
  • the active region is, for example, the region of the organic optoelectronic Components 1, in which electric current for operation of the organic optoelectronic component 1 flows and / or in which electromagnetic radiation is generated or absorbed.
  • a getter structure (not shown) may be arranged on or above the active area.
  • the getter layer can be translucent, transparent or opaque.
  • the getter layer may include or be formed of a material that absorbs and binds substances that are detrimental to the active area.
  • an encapsulation layer 24 of the optoelectronic layer structure is formed, which encapsulates the optoelectronic layer structure.
  • Encapsulation layer 24 may be formed as a second barrier thin film.
  • the encapsulation layer 24 may also be referred to as thin-layer encapsulation.
  • Encapsulation layer 24 forms a barrier to chemical contaminants or atmospheric agents, especially to water (moisture) and oxygen.
  • the encapsulation layer 24 may be formed as a single layer, a layer stack, or a layered structure.
  • the encapsulation layer 24 may include or be formed from: alumina, zinc oxide, zirconia,
  • Indium tin oxide Indium tin oxide, indium zinc oxide, aluminum doped zinc oxide, poly (p-phenylene terephthalamide), nylon 66, and mixtures and alloys thereof. If necessary, the first
  • Barrier layer on the carrier 12 corresponding to a configuration of the encapsulation layer 24 may be formed.
  • Encapsulation layer 24 a second contact region 34 is exposed.
  • the first contact region 32 serves for
  • the adhesive layer 36 comprises, for example, an adhesive, for example an adhesive,
  • the adhesive layer 36 may comprise, for example, particles which scatter electromagnetic radiation, for example light-scattering particles.
  • the adhesive layer 36 serves to secure the cover body 38 to the encapsulation layer 24.
  • the cover body 38 has, for example, plastic, glass
  • the cover body 38 may be formed substantially of glass and a thin
  • the cover body 38 serves to protect the organic optoelectronic component 1,
  • cover body 38 for distributing and / or
  • the glass of the covering body 38 can serve as protection against external influences, and the metal layer of the covering body 38 can serve for distributing and / or dissipating the heat arising during operation of the organic optoelectronic component 1.
  • the isolation barriers 21, 23 are part of a
  • Insulator layer structure Above the substrate and directly on the Insulator layer structure and in particular the
  • Isolation barriers 21, 23 each have a dielectric barrier layer 40 is formed such that in Figure 1 above vertical surfaces and lateral side surfaces of the insulator layer structure and in particular the
  • the isolation barriers 21, 23 are completely enclosed by the substrate and the dielectric barrier layer 40.
  • the organic is functional
  • Isolation barriers 21, 23 are formed can
  • an organic material for example, be an organic material, in particular an organic resist, in particular synthetic resin.
  • the material of the dielectric barrier layer 40 is formed electrically insulating.
  • Barrier layer 40 is formed so thin that its electrical function, in particular its electrical
  • the dielectric is not or at least approximately not given.
  • the dielectric is not or at least approximately not given.
  • the dielectric barrier layer 40 formed so thin that at least theoretically charge carriers can tunnel through them unhindered or at least almost unhindered.
  • the dielectric barrier layer 40 has a thickness of 0.1 nm to 20 nm, for example from 1 nm to 10 nm,
  • the dielectric barrier layer 40 serves to prevent the outgassing of decomposition substances from the
  • Insulator layer structure and in particular the
  • the barrier layer 40 is thus so thin that the dielectric barrier layer 40 is electrically and / or optically inactive regardless of the material used for the dielectric barrier layer 40 and yet provides sufficient protection against decomposition of the underlying insulator layer structure into the organic functional layer
  • the dielectric barrier layer 40 can be deposited directly on the substrate and the insulator layer structure, in particular from the gas phase, for example in an ALD method.
  • the dielectric barrier layer 40 may
  • an MLD layer alternatively an MLD layer, an MVD layer or a
  • the dielectric barrier layer 40 is deposited from the gas phase.
  • the dielectric barrier layer 40 may be formed by sputtering.
  • the dielectric barrier layer 40 has, for example, Al 2 O 3 , ⁇ O 2 , ZrO x, ⁇ , HfQ x and / or alucons, titanocones or a self-aligning monolayer (Seif Assembling Mono layer - SAM) or is formed therefrom.
  • the dielectric barrier layer 40 is an ALD layer of Al 2 O 3 with a thickness of 4 nm to 6 nm and has no appreciable influence on the electrooptical behavior of the organic optoelectronic component 1 during operation, especially instantaneous, but prevents this in the medium and long term Outgassing the
  • Fig. 2 shows an embodiment of an organic optoelectronic device, for example, largely corresponds to the embodiment shown in Figure 1.
  • the optoelectronic component 1 has the dielectric
  • Embodiment not only on the isolation barriers 21, 23 but also over the entire first electrode 20 extends. However, the electrical function of the first electrode remains unchanged or at least approximately unchanged, since the dielectric barrier layer 40 is formed so thin that the charge carriers can tunnel through it.
  • the dielectric barrier layer 40 is formed from an electrically insulating material and formed so thin that charge carriers, for example holes or electrons, can pass from the underlying first electrode 20 to the organic functional layer structure 22 lying above the dielectric barrier layer 40, or the other way around, for example about
  • the dielectric barrier layer 40 is formed as a flat closed layer.
  • FIG. 3 shows an exemplary embodiment of an organic optoelectronic component which largely corresponds, for example, to the exemplary embodiment shown in FIG.
  • the optoelectronic component 1 has the dielectric
  • Embodiment not only on the isolation barriers 21, 23 and the first electrode 20 but also on the first and second contact portion 16, 18 extends.
  • contact portions 16, 18 remain unchanged or at least approximately unchanged, since the dielectric Barrier layer 40 is formed so thin that the charge carriers can tunnel through them.
  • the dielectric barrier layer 40 is formed of an electrically insulating material and formed so thin that charge carriers, such as holes or electrons, from the underlying contact portions 16, 18 to not shown in Figure 3 via the dielectric barrier layer 40 electrical contacts for electrical contacting of the organic optoelectronic component 1 or the other way around,
  • dielectric barrier layer 40 is a sheet-like closed layer
  • Barrier layer 40 help to prevent the first contact region 32 and / or the second contact region 34 oxidize.
  • FIG. 4 shows an exemplary embodiment of an organic optoelectronic component which largely corresponds, for example, to the exemplary embodiment shown in FIG.
  • the optoelectronic component 1 has the dielectric
  • Embodiment not only on the isolation barriers 21, 23 but also on a power distribution structure 42 and
  • Insulator layers 44 extends.
  • the power distribution structure 42 has several
  • busbars also referred to as busbars, on or are formed thereof.
  • the power distribution structure 42 and in particular the busbars are each one of
  • Insulator layers 44 covered. In particular, they cover
  • the insulator layers 44 have an electrical
  • the current distribution structure 42 and the insulator layers 44 are part of the substrate of the organic optoelectronic component 1.
  • the insulator layers 44 are of the dielectric
  • the dielectric barrier layer 40 prevents outgassing of decomposition substances from the material of
  • Insulator layer structure in particular of the insulator layers 44.
  • the dielectric barrier layer 40 is not limited.
  • FIG. 5 shows an exemplary embodiment of an organic optoelectronic component which largely corresponds, for example, to the exemplary embodiment shown in FIG.
  • the optoelectronic component 1 has the dielectric
  • Insulator layers 44 extends but also over the first electrode 20th
  • FIG. 6 shows an exemplary embodiment of an organic optoelectronic component which largely corresponds, for example, to the exemplary embodiment shown in FIG.
  • the Optoelectronic component 1 has the dielectric
  • Fig. 7 shows a detailed view of a
  • the power distribution structure 42 has three
  • first bus bar layer 46 formed directly on the first electrode 20
  • second busbar layer 48 formed on the first bus bar layer 46
  • third busbar layer 50 formed on the second bus bar layer 48.
  • the first bus bar layer 46 has
  • the second busbar layer 48 comprises, for example, aluminum or is formed thereof and the third busbar layer 50 comprises, for example molybdenum or is formed thereof.
  • the first electrode 20 and the insulator layers 44 completely enclose the current distribution structure 42, in particular the busbars.
  • Fig. 8 shows a detailed view of a
  • Embodiment of an organic optoelectronic device for example, with reference to Figure 7 illustrated organic optoelectronic device 1, wherein on the first electrode 20 and the insulator layer 44, the dielectric barrier layer 40 is formed and wherein on the dielectric barrier layer 40, the
  • organic functional layer structure 22 is formed.
  • the dielectric barrier layer 40 and the first electrode 20 completely enclose the insulator layer structure, in particular the insulator layer 44.
  • the dielectric barrier layer 40 prevents or reduces the outgassing of decomposition substances from the insulator layer structure, in particular the insulator layer 44, into the organic layer
  • the dielectric barrier layer ⁇ or TiOx has or is formed thereof and / or has a thickness in a range of, for example, 2 nm to 7 nm.
  • Pig. 9 shows an example of a voltage-luminance diagram. In the voltage-luminosity diagram several curves are drawn, which have a luminosity in
  • Power distribution structures 42 with different busbars in particular different with respect to the material from which they are formed, and various trained on it
  • Dielectric barrier layers 40 in particular different with respect to the material used from which they are formed, wherein the dielectric barrier layers 40 all have a thickness in the range of 2 nm to 7 nm.
  • the measured curves are so close to each other that they can not be shown separated from each other on the scale shown.
  • the voltage-light intensity diagram thus shows that the dielectric barrier layer 40 has no appreciable or at least only negligible influence on the luminous intensity of the organic
  • Fig. 10 shows an example of a voltage-current density diagram.
  • the voltage-current density diagram several measurement curves are plotted, which is a current density of a current, which in operation via the organic optoelectronic
  • Component 1 flows, depending on a to the
  • organic optoelectronic device 1 applied voltage.
  • the various measurement curves relate to different power distribution structures 42, in particular
  • Power distribution structures 42 with different busbars in particular different with respect to the material from which they are formed, and various formed thereon
  • Dielectric barrier layers 40 in particular different with respect to the material used, from which they are formed, wherein the dielectric barrier layers 40 all have a thickness of 2 nm or 3 nm.
  • the measured curves lie in the relevant operating range from 6 V at least partially so close to each other that they can not be shown separated from each other in the relevant operating range on the scale shown. From the
  • Voltage-current density diagram thus shows that the dielectric barrier layer 40 no significant or has at least only negligible influence on the current density in the organic optoelectronic component 1.
  • Fig. 11 shows an example of a voltage-luminous efficiency diagram.
  • the voltage-luminous efficiency diagram several measurement curves are plotted, which have a luminous efficiency of the organic optoelectronic component 1 in FIG.
  • the various measurement curves relate to different power distribution structures 42, in particular
  • Power distribution structures 42 with different busbars in particular different with respect to the material from which they are formed, and various formed thereon
  • Dielectric barrier layers 40 in particular different with respect to the material used, from which they are formed, wherein the dielectric barrier layers 40 all have a thickness of 2 nm or 3 nm.
  • the measured curves lie in the relevant operating range between 6 V and 12 V at least partially so close to each other that they can not be displayed separately from each other in the relevant operating range on the scale shown. From the voltage-light efficiency diagram is thus apparent that the dielectric barrier layer 40 no
  • Fig. 12 shows a flowchart of a method for
  • Electrode formed For example, the substrate is formed with the first electrode 20. Optionally, that can Substrate be formed so that it is the first electrode 20.
  • Electrode layer 14, in particular the first electrode 20, and the contact portions 16, 18 has. Furthermore, optionally in step S2 already a part of
  • Insulator layer structure 42 are formed, in particular, the isolation barriers 21, 23 are formed.
  • the isolation barriers 21, 23 may be parts of the substrate.
  • Power distribution structure are formed.
  • the power distribution structure 42 may be formed on the first electrode 20.
  • an insulator layer structure becomes
  • the above-described insulator layer structure 42 is formed.
  • Insulator layer structure 42 includes isolation barriers 21, 23 and / or insulator layers 44.
  • the insulator layers 44 may be applied to the
  • a dielectric barrier layer is formed.
  • the above-described dielectric barrier layer 40 is formed.
  • the dielectric barrier layer 40 may be over the entire
  • Substrate are formed. Alternatively, the
  • dielectric barrier layer 40 only over the
  • Insulator layer structure in particular the
  • Isolation barriers 21, 23 and / or the insulator layers 44, and / or the first electrode 20 are formed.
  • the dielectric barrier layer 40 is deposited from the gas phase directly on the substrate, in particular in an ALD process. Alternatively, the dielectric
  • Process or a PECVD process are deposited or formed by sputtering.
  • it may be left for a predetermined period of time before the dielectric barrier layer 40 is formed thereover. During this predetermined period of time, the
  • the predetermined duration may, for example, be between 1 and 3 hours, for example about 2 hours.
  • the substrate may be heated with the dielectric barrier layer 40, thereby promoting the outgassing of the decomposers prior to forming the dielectric barrier layer 40.
  • an organic, in particular an organic functional layer structure is formed.
  • step S10 the organic compound
  • a second electrode is formed.
  • the second electrode 23 is above the
  • organic functional layer structure 22 is formed.
  • a cover may be formed or disposed over the second electrode.
  • the cover may comprise the encapsulation layer 24, the adhesive layer 36 and / or the cover body 38.
  • one of the isolation barriers 21, 23, for example the second isolation barrier 23, can be dispensed with.
  • the Insulator layer structure further insulating structures, which are formed by the material that outgases decomposition substances over time, and the corresponding insulating structures can also from the
  • dielectric barrier layer 40 be covered dielectric barrier layer 40.

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

L'invention concerne différents modes de réalisation d'un composant optoélectronique organique (1). Le composant optoélectronique organique (1) comprend sur un substrat, qui comprend au moins une première électrode (20), une structure de couche isolante diélectrique qui est disposée sur le substrat et qui est en contact matériel direct avec la première électrode (20), une couche barrière diélectrique (40) qui est formée directement sur la structure de couche isolante et au moins en partie directement sur la première électrode (20) et recouvre les côtés latéraux de la structure de couche isolante, une structure de couche fonctionnelle organique (22) qui est formée au-dessus de la première électrode (20) et sur la couche barrière diélectrique (40) et/ou à côté de cette dernière, et une seconde électrode (23) qui est formée au-dessus de la structure de couche fonctionnelle organique (22).
PCT/EP2016/068335 2015-08-03 2016-08-01 Composant optoélectronique organique et procédé de fabrication d'un composant optoélectronique organique WO2017021372A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102015112681.8A DE102015112681A1 (de) 2015-08-03 2015-08-03 Organisches optoelektronisches Bauelement und Verfahren zum Herstellen eines organischen optoelektronischen Bauelements
DE102015112681.8 2015-08-03

Publications (1)

Publication Number Publication Date
WO2017021372A1 true WO2017021372A1 (fr) 2017-02-09

Family

ID=56741013

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2016/068335 WO2017021372A1 (fr) 2015-08-03 2016-08-01 Composant optoélectronique organique et procédé de fabrication d'un composant optoélectronique organique

Country Status (2)

Country Link
DE (1) DE102015112681A1 (fr)
WO (1) WO2017021372A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021121344A1 (fr) * 2019-12-18 2021-06-24 固安翌光科技有限公司 Dispositif électroluminescent organique
US20220359332A1 (en) * 2021-05-09 2022-11-10 Spts Technologies Limited Temporary passivation layer on a substrate
US11653522B2 (en) 2018-04-05 2023-05-16 Microoled Electroluminescent device with improved resolution and reliability

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6137220A (en) * 1997-05-09 2000-10-24 Tohoku Pioneer Electronic Organic electroluminescent display with protective film and trapezoidal walls
US20090273589A1 (en) * 2006-01-31 2009-11-05 Kyocera Corporation El Device
US20120097982A1 (en) * 2010-10-20 2012-04-26 Semiconductor Energy Laboratory Co., Ltd. Lighting Device
DE102012109140A1 (de) * 2012-09-27 2014-03-27 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelementes
US20140319481A1 (en) * 2013-04-30 2014-10-30 Samsung Display Co.,Ltd. Organic light-emitting display device and method of manufacturing the same
WO2015079519A1 (fr) * 2013-11-27 2015-06-04 株式会社 東芝 Élément électroluminescent organique, appareil d'éclairage et système d'éclairage

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112006002220B4 (de) * 2005-08-23 2018-05-24 Cambridge Display Technology Ltd. Organische elektronische Vorrichtungsstrukturen und Herstellungsverfahren
DE102009022900A1 (de) * 2009-04-30 2010-11-18 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
DE102011076733B4 (de) * 2011-05-30 2023-12-28 Pictiva Displays International Limited Optoelektronisches Bauelement, Verfahren zum Herstellen eines optoelektronischen Bauelements, Verwendung einer Glasfritte zur Kantenpassivierung einer Elektrode eines optoelektronischen Bauelements, und Verwendung einer Glasfritte zur Passivierung einer oder mehrerer metallischer Busleitungen eines optoelektronischen Bauelements

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6137220A (en) * 1997-05-09 2000-10-24 Tohoku Pioneer Electronic Organic electroluminescent display with protective film and trapezoidal walls
US20090273589A1 (en) * 2006-01-31 2009-11-05 Kyocera Corporation El Device
US20120097982A1 (en) * 2010-10-20 2012-04-26 Semiconductor Energy Laboratory Co., Ltd. Lighting Device
DE102012109140A1 (de) * 2012-09-27 2014-03-27 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelementes
US20140319481A1 (en) * 2013-04-30 2014-10-30 Samsung Display Co.,Ltd. Organic light-emitting display device and method of manufacturing the same
WO2015079519A1 (fr) * 2013-11-27 2015-06-04 株式会社 東芝 Élément électroluminescent organique, appareil d'éclairage et système d'éclairage
US20160268545A1 (en) * 2013-11-27 2016-09-15 Kabushiki Kaisha Toshiba Organic electroluminescent element, lighting device, and lighting system

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11653522B2 (en) 2018-04-05 2023-05-16 Microoled Electroluminescent device with improved resolution and reliability
WO2021121344A1 (fr) * 2019-12-18 2021-06-24 固安翌光科技有限公司 Dispositif électroluminescent organique
US20220359332A1 (en) * 2021-05-09 2022-11-10 Spts Technologies Limited Temporary passivation layer on a substrate

Also Published As

Publication number Publication date
DE102015112681A1 (de) 2017-02-09

Similar Documents

Publication Publication Date Title
EP2321863B1 (fr) Procede pour produire un photoemetteur organique, et photoemetteur organique
DE102008020816B4 (de) Organische Leuchtdiode, flächiges, optisch aktives Element mit einer Kontaktanordnung und Verfahren zur Herstellung einer organischen Leuchtdiode
DE102012200485A1 (de) Organische lichtemittierende Vorrichtung und Verfahren zum Prozessieren einer organischen lichtemittierenden Vorrichtung
WO2014023807A2 (fr) Composants et procédé de fabrication de composants
WO2010009716A2 (fr) Dispositif émettant un rayonnement et procédé de fabrication d'un dispositif émettant un rayonnement
EP2301092B1 (fr) Composant optoelectronique encapsule et son procede de fabrication
WO2017021372A1 (fr) Composant optoélectronique organique et procédé de fabrication d'un composant optoélectronique organique
DE102011005612A1 (de) Organisches Optoelektronisches Bauelement und Verfahren zur Herstellung eines Optoelektronischen Bauelements
WO2016113097A1 (fr) Composant électroluminescent organique
DE102012220724B4 (de) Optoelektronisches Bauelement
DE102013109646B4 (de) Organisches optoelektronisches Bauelement
EP3317906B1 (fr) Composant organique électroluminescent et son procédé de fabrication
WO2017071948A1 (fr) Composant optoélectronique et procédé de fabrication d'un composant optoélectronique
DE102017107707A1 (de) Verfahren zur Herstellung eines elektronischen Bauelements und elektronisches Bauelement
DE102015116055B4 (de) Flächiges lichtemittierendes Bauelement und Verfahren zum Herstellen eines flächigen lichtemittierenden Bauelements
DE102017117051A1 (de) Organisches Licht emittierendes Bauelement und Licht emittierende Vorrichtung
WO2008083671A1 (fr) Dispositif optoélectronique et procédé de fabrication d'un dispositif optoélectronique
DE102015106630A1 (de) Organisches lichtemittierendes Bauelement und Verfahren zur Herstellung eines organischen lichtemittierenden Bauelements
DE102014223507A1 (de) Organisches Licht emittierendes Bauelement und Verfahren zur Herstellung eines organischen Licht emittierenden Bauelements
DE102017116049A1 (de) Verfahren zum herstellen eines substrats für ein optoelektronisches bauelement, verfahren zum herstellen eines optoelektronischen bauelements, substrat für ein optoelektronisches bauelement und optoelektronisches bauelement
DE102017102689A1 (de) Organisches Licht emittierendes Bauelement und Verfahren zur Herstellung eines organischen Licht emittierenden Bauelements
DE102012109141A1 (de) Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelementes
WO2016139209A1 (fr) Composant optoélectronique et procédé de fabrication d'un composant optoélectronique
DE102016109204A1 (de) Organisches, lichtemittierendes bauelement und verfahren zum herstellen desselben
DE102016111320A1 (de) Verfahren zur Herstellung eines organischen lichtemittierenden Bauelements und organisches lichtemittierendes Bauelement

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 16754213

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 16754213

Country of ref document: EP

Kind code of ref document: A1