WO2008072502A1 - Procédé et appareil d'exposition, et procédé de fabrication de dispositif - Google Patents

Procédé et appareil d'exposition, et procédé de fabrication de dispositif Download PDF

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Publication number
WO2008072502A1
WO2008072502A1 PCT/JP2007/073367 JP2007073367W WO2008072502A1 WO 2008072502 A1 WO2008072502 A1 WO 2008072502A1 JP 2007073367 W JP2007073367 W JP 2007073367W WO 2008072502 A1 WO2008072502 A1 WO 2008072502A1
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WIPO (PCT)
Prior art keywords
measurement
area
pattern
exposure
light
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PCT/JP2007/073367
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English (en)
Japanese (ja)
Inventor
Dai Arai
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Nikon Corporation
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Application filed by Nikon Corporation filed Critical Nikon Corporation
Priority to JP2008549249A priority Critical patent/JPWO2008072502A1/ja
Publication of WO2008072502A1 publication Critical patent/WO2008072502A1/fr

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049—Technique, e.g. interferometric
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection

Definitions

  • the present invention relates to an exposure technique for exposing an object through an optical system and a device manufacturing technique using this exposure technique, and relates to various devices such as a semiconductor integrated circuit, a liquid crystal display element, or a thin film magnetic head. It can be applied to transfer a pattern such as a mask onto a substrate in a lithographic process for manufacturing.
  • a wafer (or glass) on which a resist as a photosensitive substrate is applied to a pattern formed on a reticle (or a photomask) via a projection optical system For example, an exposure apparatus such as a batch exposure type projection exposure apparatus such as a stepper or a scanning exposure type projection exposure apparatus such as a scanning stepper is used to transfer the image to each shot area of a plate.
  • an exposure apparatus such as a batch exposure type projection exposure apparatus such as a stepper or a scanning exposure type projection exposure apparatus such as a scanning stepper is used to transfer the image to each shot area of a plate.
  • the reticle pattern is superimposed on the second and subsequent layers on the wafer for exposure, the circuit pattern formed in the previous process in each shot area on the wafer, and the exposure from now on. Therefore, it is necessary to maintain a high overlay accuracy with the reticle pattern image.
  • a laser interferometer that measures the position of a reticle and a stage that drives a wafer with high accuracy
  • a reticle mark that measures the position of a reticle-side alignment mark (reticular mark)
  • It has a alignment microscope and alignment sensor that measures the position of the wafer side alignment mark (wafer mark).
  • ESA enhanced alignment
  • a wafer mark attached to a predetermined shot area on the wafer is used. The array coordinates of each shot area on the wafer with respect to the projection position of the reticle pattern were obtained by statistically processing the measurement results of the positions.
  • the stage is driven to perform exposure based on the array coordinates and the measurement value of the laser interferometer, and thereby each shot area on the wafer (the circuit pattern formed in the previous process).
  • the reticle pattern image was overlaid and exposed! [0004]
  • a wafer mark is formed in advance in each scanning region on the wafer substantially continuously or at a predetermined interval in the scanning direction, and exposure is now performed.
  • An exposure method has also been proposed in which a reticle mark corresponding to the scanning direction is also formed on the reticle.
  • one stage is set so that the positional deviation between the wafer mark and the corresponding reticle mark is measured by a predetermined sensor and the measured positional deviation is corrected.
  • the reticle pattern image was actually superimposed on each shot area on the wafer (see, for example, Patent Document 1).
  • Patent Document 1 Japanese Patent No. 3084773
  • a laser interferometer is used to measure the stage position with high accuracy.
  • the laser interferometer is configured to move gas in the optical path of the laser beam due to movement of the stage.
  • the measured value may slightly fluctuate.
  • Such fluctuations in measured values are almost within the allowable range for the overlay accuracy that is currently required, but in the future, overlay accuracy will be increased in response to further miniaturization of semiconductor integrated circuits and the like.
  • it is necessary to reduce the influence of fluctuations in the measurement values of the laser interferometer.
  • the present invention is applicable to exposure using a liquid immersion method, and also provides an exposure technique and a device manufacturing technique capable of obtaining high overlay accuracy. aimed to.
  • An exposure method is an exposure method in which a predetermined area (SA1) on an object (P) is irradiated with exposure light via an optical system (PL) to expose the predetermined area.
  • the optical system is in the measurement area (SA2 to SA5) consisting of the predetermined area on the object or the area on the object whose positional relationship is known. Irradiate measurement light without passing through, measure the position information of the specified area, and control the relative positional relationship between the exposure light and the specified area based on the measurement result of the position information! To do.
  • the exposure apparatus includes a predetermined region (SA on the object (P) through the PU).
  • An exposure apparatus that irradiates exposure light to 1) and exposes the predetermined area, and when the exposure light is irradiated to the predetermined area, the predetermined area on the object or the positional relationship with the predetermined area
  • Measuring device 40A to 40D that irradiates the measurement area (SA2 to SA5) consisting of the area on the object with the known area without measuring the optical system and measures the position information of the predetermined area
  • a control device 34, 43, 45 for controlling the relative positional relationship between the exposure light and the predetermined region based on the measurement result of the measurement device.
  • the device manufacturing method according to the present invention uses the exposure apparatus of the present invention.
  • the reference numerals in parentheses attached to the above-mentioned predetermined elements of the present invention are the forces corresponding to the members in the drawings showing an embodiment of the present invention.
  • the elements of the invention are merely illustrated, and the present invention is not limited to the configuration of the embodiment.
  • the relative positional relationship between the exposure light and the predetermined area on the object is controlled using the actual measurement result of the position information of the measurement area on the object.
  • a pattern (image) or the like can be exposed on the predetermined area with high overlay accuracy.
  • the position information of the measurement area is measured without going through the optical system, even when exposure is performed by the immersion method with a liquid interposed between the optical system and the object.
  • the present invention is applicable.
  • the control apparatus controls the exposure light and the exposure light based on the position information of the measurement area obtained by the measurement apparatus.
  • the exposure method of the present invention can be used by controlling the relative positional relationship with a predetermined area. Thereby, the liquid immersion method can be applied and high overlay accuracy can be obtained.
  • the device manufacturing method of the present invention a high overlay accuracy can be obtained when exposure is performed on the second and subsequent layers of a substrate or the like, so that a device having a fine pattern can be manufactured with high accuracy.
  • FIG. 1 is a perspective view showing a projection exposure apparatus used in an example of an embodiment of the present invention.
  • FIG. 2 (A) is a plan view showing reticle R used for exposure of the first layer of substrate P in FIG.
  • FIG. 1 is an enlarged view showing a part of scale pattern 56 of reticle R.
  • FIG. 3 (A) is a plan view showing another example of a scale pattern formed on the reticle R, (B
  • FIG. 4 (A) is a plan view showing an example of the shot arrangement of the substrate P in FIG. 1, (B) is an enlarged plan view showing the yacht area SA of FIG. 4 (A), and (C) is FIG. FIG. 6B is an enlarged plan view showing a part of the scale pattern 56P in (B).
  • FIG. 5A is a perspective view showing a configuration example of the detector 40A included in the exposure apparatus of FIG. 1
  • FIG. 5B is an enlarged view showing an L & S pattern 58YP as a scale pattern
  • FIG. 5C is an L & S pattern. It is a figure which shows detection signal S1Y detected corresponding to 58YP.
  • FIG. 6 (A) is an enlarged view showing another example of the scale pattern, (B) is a diagram showing the detection signal S1Y detected corresponding to the pattern of Fig. 7 (A), (C) and (D) is a diagram showing a signal obtained by separating from the detection signal S1Y.
  • FIG. 7 is a perspective view showing another configuration example of the detector 40A provided in the exposure apparatus of FIG.
  • FIG. 8A is an enlarged view showing an example including an origin pattern as a scale pattern
  • FIG. 8B is an enlarged view showing an example including an absolute position detection pattern as a scale pattern.
  • FIG. 9 is a plan view showing a state where the shot area SA1 on the substrate P in FIG. 1 is exposed.
  • FIG. 10 is an enlarged view showing an example of a scale pattern formed in a shot region on a substrate P in FIG.
  • FIG. 11 is a perspective view showing a main part of another example of the embodiment of the present invention.
  • FIG. 12 is a diagram showing an arrangement of a plurality of detectors 40 A, etc., on a substrate-side scale pattern in another example of an embodiment of the present invention.
  • the present invention is applied to the case where exposure is performed with a scanning exposure type exposure apparatus (projection exposure apparatus) made of a scanning stagger.
  • FIG. 1 shows a schematic configuration of an exposure apparatus EX of this example.
  • the exposure apparatus EX includes an exposure light source 1 and a reticle R (mask) on which a transfer pattern is formed is exposed to exposure light IL ( Illumination optical system 16 that illuminates with exposure beam), reticle stage 21 that drives reticle R, projection optical system PL that projects an image of the pattern of reticle R onto substrate P, and substrate stage that drives substrate P 34, a drive system for these stages, a main control system 41 composed of a computer that comprehensively controls the operation of the entire apparatus, and a processing system for performing various other controls and operations.
  • the exposure light source an ArF excimer laser light source (wavelength: 193 nm) is used.
  • Exposure light sources include KrF excimer laser light source (wavelength 247 nm), ultraviolet pulse laser light source such as F laser light source (wavelength 157 nm), harmonic generation light source of YAG laser, harmonic generation of solid-state laser (semiconductor laser, etc.) Equipment or mercury lamps (i-line etc.) can also be used.
  • KrF excimer laser light source wavelength 247 nm
  • ultraviolet pulse laser light source such as F laser light source (wavelength 157 nm)
  • harmonic generation light source of YAG laser harmonic generation of solid-state laser (semiconductor laser, etc.)
  • Equipment or mercury lamps i-line etc.
  • the exposure light IL pulsed from the exposure light source 1 at the time of exposure passes through the mirror 2, a beam shaping optical system (not shown), the first lens 3A, the mirror 4, and the second lens 3B, and the cross-sectional shape becomes a predetermined shape. After being shaped, the light enters the fly's eye lens 5 as an optical integrator, and the illuminance distribution is made uniform.
  • an aperture for determining illumination conditions On the exit surface of the fly-eye lens 5 (pupil surface of the illumination optical system 16), an aperture for determining illumination conditions by setting the exposure light intensity distribution to a circle, multiple eccentric regions, an annular zone, a small circle, etc. Opening of illumination system with diaphragm ( ⁇ diaphragm) 7A, 7mm, 7C, 7D, etc.
  • An aperture stop member 6 is rotatably arranged by a drive motor 8. The main control system 41 rotates the illumination system aperture stop member 6 via the drive motor 8 to set the illumination conditions.
  • the exposure light IL that has passed through the aperture stop in the illumination system aperture stop member 11 passes through a beam splitter 9 and a relay lens 12A having a low reflectivity, and then a fixed blind (fixed field stop) 13A and a movable blind (movable field of view). Aperture) Pass sequentially through 13B.
  • the movable blind 13B is arranged on a plane almost conjugate with the pattern plane (reticle plane) of the reticle R, and the fixed blind 13A is arranged on a plane slightly defocused from the plane conjugate with the reticle plane.
  • the fixed blind 13A is used to define the illumination area 17R on the reticle surface as a slit-like area elongated in the non-scanning direction perpendicular to the scanning direction of the reticle R.
  • the movable blind 13B is used to close the illumination area 17R in the scanning direction so that unnecessary areas are not exposed at the start and end of the scanning exposure on the exposure area on the substrate P. Is done.
  • the movable blind 13B is further used to define the center and width of the illumination area 17R in the non-scanning direction.
  • the exposure light IL that has passed through the blinds 13A and 13B illuminates the illumination area 17R of the pattern area of the reticle R with a uniform illuminance distribution through the sub condenser lens 12B, the mirror 14 for bending the optical path, and the main condenser lens 15. To do.
  • the exposure light reflected by the beam splitter 9 is received by the integrator sensor 11 including a photoelectric sensor via the condenser lens 10.
  • the detection information of the integrator sensor 11 is supplied to an exposure amount control system 42.
  • the exposure amount control system 42 uses the detection information and information on the transmittance of the optical system from the beam splitter 9 to the substrate P, which is measured in advance.
  • the energy of the exposure light IL on the substrate P is indirectly calculated.
  • the exposure amount control system 42 Based on the integrated value of the calculation result and the control information from the main control system 41, the exposure amount control system 42 emits light from the exposure light source 1 so that an appropriate exposure amount can be obtained on the surface (exposure surface) of the substrate P.
  • the illumination optical system 16 includes members from the exposure light source 1 to the main condenser lens 15.
  • the pattern in the illumination area 17R of the reticle R is projected to the projection magnification / 3 (/ 3 is 1/4, 1/5, etc.) ) Is projected onto a projection area 17P elongated in the non-scanning direction on one shot area SA on the substrate P.
  • the substrate P is a disk-shaped semiconductor substrate (e.g. silicon or SO silicon on insulator) in this example. Eno) is coated with a photoresist (photosensitive material).
  • the projection optical system PL is, for example, a refractive system, but a catadioptric system or the like can also be used.
  • the Z-axis is taken parallel to the optical axis AX of the projection optical system PL, and along the non-scanning direction orthogonal to the scanning direction of the reticle R and the substrate P during scanning exposure in a plane perpendicular to the Z-axis. Take the X axis and take the Y axis along the scanning direction.
  • the reticle R is held by suction on the reticle stage 21, and the reticle stage 21 moves on the reticle base 22 at a constant speed in the Y direction, and for example, a synchronization error (or a pattern image of the reticle R and the substrate P on the substrate P).
  • the reticle R is scanned by slightly moving in the X, Y, and Z axis rotation directions so as to correct the misalignment with the shot area during exposure.
  • Reticle stage 21 is arranged with laser interferometers 23X and 23Y arranged so as to face the reflecting surfaces (or moving mirrors, corner reflectors, etc.) on the X and Y sides of reticle stage 21, for example, with respect to projection optical system PL.
  • the position of 21 is measured and the measured value is supplied to the stage drive system 43 and the main control system 41! /.
  • a scale pattern 56 for measuring positional information of the reticle R in the X direction and the Y direction is formed in the pattern area of the reticle R along the Y direction.
  • a pair of detectors for detecting the position information of the scale pattern 56 via the optical path bending mirror at a position sandwiching the illumination area 17R above the reticle R in the Y direction (scanning direction). 25A and 25B are arranged, and the detection results of the detectors 25A and 25B are supplied to a coordinate measurement / interpolation system 45 including an arithmetic unit.
  • a storage device 46 such as a magnetic disk device is connected to the coordinate measurement / interpolation system 45, and the position information of the reticle R is obtained and supplied to the stage drive system 43 as will be described later.
  • the scale pattern 56 and detectors 25A and 25B constitute an encoder that directly measures the position information of the reticle R (including information on the movement and / or absolute position (origin position) in the pattern area). . Details of this encoder and coordinate measurement / interpolation system 45 will be described later.
  • the method for driving the reticle stage 21 in this example includes first and second drive modes set by the main control system 41 in accordance with an operator's designation.
  • the stage drive system 43 is based on measurement values of the laser interferometers 23X and 23Y and control information from the main control system 41! /, Based on a drive mechanism (not shown) such as a linear motor. Reticle stays through Control the position and speed of the 21.
  • the stage drive system 43 controls the position information of the reticle R output from the coordinate measurement / interpolation system 45 based on the measurement values of the detectors 25A and 25B and the control from the main control system 41.
  • the position and speed of the reticle stage 21 are controlled. If the reticle stage 21 of this example is driven only in the first drive mode, the detectors 25A and 25B can be omitted. When the exposure apparatus of this example is driven only in the second drive mode, the laser interferometers 23X and 24Y are omitted, or the position of the scale is measured by a sensor such as an optical type or a capacitance type. It is possible to substitute a measuring instrument with a coarse resolution.
  • alignment mark 52A and so as to sandwich the pattern area of reticle R in the X direction.
  • reticle alignment microscopes 24A and 24B for detecting the positions of the alignment marks 52A and 52B via optical path bending mirrors are arranged.
  • the detection signals of the reticle alignment microscopes 24A and 24B are supplied to the alignment signal processing system 44, and the alignment signal processing system supplies the main control system 41 with information on the mark position detected by the image processing method.
  • the substrate P is sucked and held on the substrate stage 34 via the substrate holder 31, and the substrate stage 34 moves on the base member 35 at a constant speed in the Y direction, and in the X direction and the Y direction.
  • An XY stage 33 that moves in steps and a Z tilt stage 32 are provided.
  • the Z tilt stage 32 performs focusing and leveling of the substrate P based on the measurement values of the positions in a plurality of positions on the substrate P by an auto focus sensor (not shown).
  • the substrate holder 31 has a force represented by a flat plate in FIG. 1 Actually, the mounting surface of the substrate P of the substrate holder 31 is a recess, and the surface of the substrate P and the substrate holder 31 on the outside thereof are arranged.
  • the surface of is set to almost the same height in the Z direction.
  • the laser beam interferometers 38X and 38Y arranged so as to face the reflecting surfaces (or moving mirrors, etc.) on the side surfaces in the X direction and the Y direction of the substrate stage 34, for example, the substrate stage 34 with reference to the projection optical system PL.
  • the position in the XY plane and the rotation angles around the X, Y, and Z axes are measured, and the measured values are supplied to the stage drive system 43 and the main control system 41.
  • each of the shot areas on the substrate P has a scale pattern 56 on the reticle R in the previous process.
  • a scale pattern corresponding to the image of the reticle scale pattern used in the previous steps is formed!
  • the scale pattern on the substrate P side is, for example, a concavo-convex pattern on which a photoresist is applied.
  • the position information of the scale pattern in the X direction and the Y direction so that the projection region 17P is sandwiched in the Y direction (scanning direction) and the X direction (non-scanning direction) on the side surface of the lower end of the projection optical system PL.
  • a pair of detectors 40A and 40B and a pair of detectors 40C and 40D are arranged for measuring.
  • four detectors 40E, 40F, 40G, and 40G for measuring positional information in the X and Y directions of the scale pattern on the substrate P in the Y side surface direction at the lower end of the projection optical system PL.
  • 40H is arranged, and the detection results of the detectors 40A to 40H are also supplied to the coordinate measurement / interpolation system 45.
  • the configuration and arrangement of the eight detectors 40A to 40H will be described later. From the scale pattern and detectors 40A to 40H formed in each shot area of the substrate P, the position information of the substrate P (including information on the movement amount and / or the absolute position (origin position) in each shot area)
  • An encoder for direct measurement is configured.
  • the driving method of the substrate stage 34 of the present example also has first and second driving modes set by the main control system 41 in accordance with an operator's designation.
  • the stage drive system 43 receives the measurement values from the laser interferometers 38X and 38Y and the main control system 41. Based on the control information, the position and speed of the substrate stage 34 are controlled via a drive mechanism (not shown) such as a linear motor.
  • the stage drive system 43 is based on the measurement values of the detectors 40A to 40H and performs coordinate measurement / interpolation system. Based on the position information of the substrate P output from 45 and the control information from the main control system 41, the position and speed of the substrate stage 34 are controlled.
  • an off-axis imaging type alignment sensor for detecting the position of the alignment mark (substrate mark) on the substrate P 39
  • the detection signal of the alignment sensor 39 is supplied to the alignment signal processing system 44.
  • the alignment signal processing system 44 obtains the arrangement information of all shot areas on the substrate P by the EGA method, for example, based on the detection signal, and supplies it to the main control system 41.
  • the reference position of the image via the projection optical system PL of the pattern of the reticle R in advance (error Information on the positional relationship (baseline amount, etc.) between the alignment mark 39 and the detection position of the alignment sensor 39 is measured and stored. Therefore, a reference mark member 36 on which reference marks 37A, 37B and the like are formed is fixed near the substrate P on the substrate stage 34.
  • the alignment sensor 39 is It is not always necessary to use it. However, in order to set the origin position of the measurement values of the detectors 40A to 40H, it is also possible to use the array coordinates of each shot area of the substrate P detected by the alignment sensor 39.
  • the exposure apparatus EX of this example supplies a liquid such as pure water to a local region (immersion region) between the lens at the tip of the projection optical system PL and the substrate P, and exposes the exposure light IL.
  • a liquid immersion method is used in which the substrate P is exposed through the projection optical system PL and the liquid.
  • a liquid supply device for supplying liquid to the immersion area, and its A liquid recovery apparatus that recovers the liquid in the immersion area may be provided.
  • the illumination optical system 16 irradiates the illumination area 17R with the exposure light IL, and the pattern in the illumination area 17R of the reticle R is projected into one shot area SA on the substrate P via the projection optical system PL.
  • the reticle stage 21 and the substrate stage 34 are driven, the reticle R and the substrate P are synchronously scanned in the Y direction, and the exposure of the exposure light IL is stopped.
  • the operation of stepping the substrate P in the X and Y directions by driving the substrate stage 34 is repeated.
  • the pattern image of the reticle R is exposed to each shot area on the substrate P by the step 'and' scan method.
  • FIG. 2 (A) shows the pattern arrangement of the reticle R.
  • the reticle pattern area 51 is surrounded by a frame-shaped shading band 53 and scanned. It is a rectangular area elongated in the direction SD (Y direction).
  • the pattern area 51 is divided into six subpattern areas 55A to 55F by one scribe line area 54A in the X direction and two scribe line areas 54B and 54C in the Y direction.
  • the same or different circuit patterns are formed in 55A to 55F.
  • the scribe line areas 54A to 54C are areas to be used as cutting boundaries with a width of about 50 11 m when projected onto the substrate P.
  • the scribe line areas 54A to 54C have substantially the same width as the scribe line area 54A.
  • the inner region is also a region that serves as a cutting boundary when projected onto the substrate P. Note that since the image of the edge portion of the movable blind 13B in FIG. 1 is projected onto the shading band 53, the width thereof is somewhat larger than the scribe line region 54A.
  • the pattern area 51 has the force S divided by the three scribe line areas 54A to 54C, the number of divisions of the pattern area 51, and the arrangement of the sub-pattern areas. Is changed, the number and arrangement of the scribe line regions 54A to 54C are also changed.
  • a two-dimensional scale pattern 56 is formed over the entire area in the central scribe line area 54A parallel to the scanning direction (Y direction).
  • the scale pattern 56 has a substantially square light shielding pattern 57 as a background in the X direction (pitch) PX1 and a period in the Y direction PY1 with the light transmitting portion as the background.
  • This is a grid pattern with periodicity in the X and ⁇ directions arranged in.
  • the width of the light shielding pattern 57 in the X direction and the heel direction is usually a force S that is 1/2 of the period PX1 and PY1, for example, when indicating the origin position, the width of the light shielding pattern 57 at a specific position as described later. (Duty ratio) has changed (see Fig. 6 (A)).
  • PX1 pitch
  • PY1 period in the Y direction
  • the scale pattern 56 is similar to the line-and-space pattern in the Y direction with the period PY1 (hereinafter referred to as the L & S pattern) and the L & S pattern with the period PX1 in the X direction. It can be regarded as a superposition of.
  • the period PY1 is 0.1. ⁇ 1 ⁇ m
  • period PX1 is about 0 ⁇ 1-2 m. Since the width of the projected image of the scribe line area 54A in the X direction is about 50 m, the scale pattern 56 can be formed in the X direction for about 50 cycles or more.
  • the position of the reticle R (pattern area 51) in the X direction, the Y direction, And the rotation angle around Z axis can be measured.
  • a Y-axis scale pattern 59Y made of an L & S pattern having a predetermined period in the Y direction is formed in one light shielding band 53 parallel to the Y direction of the reticle R.
  • a two-dimensional scale pattern 56 may be formed in the other light shielding band 53 parallel to the Y direction.
  • the scale pattern 59Y is a pattern in which a large number of light shielding patterns 60Y (normal width is PY1 / 2) long in the X direction are arranged in the Y direction with a period PY1.
  • Measure reticle R (pattern area 51) by measuring one Y-direction position of scale pattern 59Y in Fig.
  • the scale pattern 56 is an L & S pattern with a period PY1 in the Y direction and an L & S pattern with a period PX1 in the X direction.
  • a pattern in which and are arranged in parallel in the X direction may be used.
  • the reticle pattern image of FIG. 2A is exposed to each shot area SA of the first layer of the substrate P of FIG. Then, after pattern formation such as development and etching of the photoresist on the substrate P is performed, the substrate P coated with the photoresist is loaded on the substrate stage 34 in order to perform exposure on the second layer.
  • FIG. 4 (A) shows the substrate P on which the image of the pattern of the reticle R is transferred and the second layer is exposed.
  • the upper surface of the substrate P is X
  • the reticle R scale pattern in Fig. 2 (A) is divided into a number of shot areas SA with a predetermined width in the direction and Y direction, and the center of each shot area SA crosses in the Y direction (scanning direction).
  • Corresponding to the image of A scale pattern 56P on the substrate P side is formed.
  • each shot area SA of the substrate P has scribe lines 54AP to 54C P (corresponding to images of the scribe line areas 54A to 54C of the reticle R in FIG. 2 (A)).
  • scribe lines 54AP to 54C P are divided into six sub-shot areas 55AP to 55FP, and the same or different first layer circuit patterns are formed in the sub-shot areas 55AP to 55FP.
  • Fig. 4 (C) is an enlarged view showing the scale pattern 56P formed over the entire area of the scribe line 54AP parallel to the Y direction of the shot area SA in Fig. 4 (B).
  • the scale pattern 56P is substantially square with the background of the substrate P as the background.
  • a convex (or concave) pattern 57P (represented as a convex pattern in FIG. 5A) is surrounded in the X direction.
  • Phase (Pitch) PX2 A phase-type two-dimensional lattice pattern with periodicity in the X and Y directions arranged in the Y direction with a period of PY2.
  • the periods PX2 and PY2 are values obtained by multiplying the periods PX1 and PY1 in FIG.
  • the scale pattern 56P in Fig. 4 (C) has an approximate L & S pattern 58YP in the Y direction with a period PY2 (a pattern in which a large number of convex or concave line patterns 72Y are arranged in the Y direction) and a period PX2
  • PY2 a pattern in which a large number of convex or concave line patterns 72Y are arranged in the Y direction
  • PX2 a period in which a large number of convex or concave line patterns 72Y are arranged in the Y direction
  • This can be regarded as an overlay with the X-direction L & S pattern 58XP (a pattern in which a number of convex or concave line patterns 72X are arranged in the X direction).
  • the scale pattern 56P in FIG. 4C formed in each shot area SA of the substrate P is regarded as the scale portion of the encoder, and the position of the scale pattern 56P is detected.
  • position information (movement amount and / or absolute position from a predetermined origin) of each shot area SA is measured.
  • the position information of each shot area SA is measured using the scale pattern 56P. This causes fluctuations in the gas in the laser beam optical path of the laser interferometers 38X and 38Y, and even if the measured values of the laser interferometers 38X and 38Y fluctuate, the shot is not affected by the fluctuations.
  • the position information of the area SA can be measured accurately. Therefore, high overlay accuracy can be maintained.
  • the position of the scale pattern 56P in the X and Y directions is detected by the eight detectors 40A to 40H on the side of the substrate P in FIG.
  • FIG. 5 (A) is a perspective view showing a configuration example of the detector 40A.
  • the scale pattern 56P is enlarged in order to facilitate component force.
  • other detectors 40B ⁇
  • the configuration of the two detectors 25A and 25B on the 40H and reticle R side is the same as that of the detector 40A.
  • a He—Ne laser (wavelength 633 nm) or a semiconductor laser that emits light from the visible region to the near infrared region (with a collimator lens installed at the exit end), etc.
  • a laser beam in a wavelength region that is non-photosensitive to the photoresist PR on the substrate P emitted from the laser light source 61 is split into a laser beam LB1 and a second laser beam by the beam splitter 62A.
  • This second laser beam is divided into a laser beam LB2 and a fourth laser beam by the beam splitter 62C, and this fourth laser beam is divided into two laser beams LB3 and LB4 by the beam splitter 62D.
  • the two laser beams LB1 and LB2 are incident on the scale pattern 56P on the substrate P while being inclined substantially symmetrically in the Y direction, and the + first-order diffracted light in the Y direction of the laser beam LB1 and the laser beam LB2
  • the interference light LBY with the first-order diffracted light in the Y direction enters the photoelectric detector 64Y such as a photodiode almost vertically from the scale pattern 56P.
  • Scale pattern 56P in Fig. 5 (A) was regarded as Y-direction L & S pattern 58YP (pattern in which line-shaped pattern 72Y was arranged in Y direction with period PY2) as shown in Fig. 5 (B).
  • the detection signal S1Y of the photoelectric detector 64Y is a sine wave signal having a period PY2 (or period PY2 / 2) with respect to the position Y as shown in FIG.
  • the detection signal S1Y of the photoelectric detector 64Y passes through the amplifier 66, and then the high-pass filter (hereinafter referred to as HPF! //) circuit 67A and the low-pass filter (hereinafter referred to as LPF! //) circuit. 67 Input to B.
  • the signal S3Y output from the HPF circuit 67A is supplied to the first input section of the counter 69.
  • a pair of laser beams (not shown) irradiated to the scale pattern 56P at a position 90 degrees out of phase in the Y direction from the laser beams LB1 and LB2 forces.
  • a detection signal S2Y whose phase is shifted by 90 ° with respect to the detection signal S1Y is generated from the interference light generated by this pair of laser beams by an unillustrated photoelectric detector, and this detection signal S2Y is generated by the HPF circuit 67C. To the second input of the counter 69.
  • the signal S4Y output from the LPF circuit 67B is input to the origin signal generator 68, and the origin signal generator 68 resets the counter 69 when the signal S4Y reaches a peak, for example.
  • a home signal is output, and the origin of the counter 69 is set accordingly.
  • the supplied two-phase detection signals S1Y and S2Y are interpolated in about 1000 divisions, and the movement amount in the soil Y direction of the scale pattern 56P relative to the detector 40A is, for example, a resolution of about 0.1 nm to lnm. Then, find the Y coordinate YA with the position where the reset signal is output as the origin. This Y coordinate YA is output to the coordinate measurement / interpolation system 45 in FIG.
  • the Y-direction L & S pattern 58YP (the Y component of the scale pattern 56P) has a central portion in the scanning direction.
  • a set of linear patterns 72YA, 72YB, 72YC, 72YD is included which gradually widens and returns to the normal width again.
  • this signal is input to the HPF circuit 67A and LPF circuit 67B in FIG. 5 (A)
  • the signal S3Y output from the HPF circuit 67A is as shown in FIG. 6 (C), as shown in FIG.
  • the signal S4Y which is the same sine wave signal as the detection signal S1Y and is output by the LPF circuit 67B, is a signal that becomes the apex at the position Y as shown in FIG. 6 (D). Therefore, the origin signal generator 68 in FIG.
  • Counter 69 is reset at position Y where Y is the vertex. As a result, the origin of counter 69
  • the LPF circuit 67B, HPF circuits 67A and 67C, origin signal generator 68, and counter 69 in Fig. 5 (A) constitute the Y-axis detection circuit 70Y, and the same configuration as the X-axis detection circuit 70X is also provided. ing. Note that the signal S3Y and the signal S4Y may be separated after the signal obtained by analog / digital conversion of the detection signal S1Y is Fourier-transformed with respect to the position Y.
  • the two laser beams LB3 and LB4 are incident on the scanore pattern 56P so as to be inclined substantially symmetrically in the X direction.
  • Interference light between the first-order diffracted light and the first-order diffracted light in the X direction of the laser beam LB4 LBX force The light enters the photoelectric detector 64X almost vertically from the pattern 56P for S scale.
  • the scale pattern 56P in Fig. 5 (A) is changed to the L & S pattern with period PX2 in the X direction
  • the detection signal SIX of the photoelectric detector 64X becomes a sine wave signal with a period PX2 (or a period PX2 / 2) with respect to the position X.
  • Detection signal S IX and detection signal S2X with phase shifted by 90 ° obtained from interference light not shown are output to detection circuit 70X.
  • the amount of movement in the ⁇ X direction of scale pattern 56P relative to detector 40A Is obtained as an X coordinate XA with a resolution of about 0.1 nm to 2 nm, for example, and this X coordinate XA is also supplied to the coordinate measurement / interpolation system 45 in FIG.
  • the X coordinate XA is also a signal whose origin is, for example, a portion where the width of the pattern 57P gradually increases in the X direction and becomes the normal width again.
  • a detector 40 ⁇ is configured including an optical system that irradiates the laser beam LB ;! to LB4 onto the substrate P, a Y-axis detection circuit 70Y, and an X-axis detection circuit 70 ⁇ . ing. Further, in this example, each light shielding pattern 57 of the scale pattern 56 on the reticle R in FIG. 2B is formed of a material that reflects the laser beam of the laser light source 61 in FIG. . As a result, a detector having the same configuration as the detector 40 ⁇ in FIG. 5 ( ⁇ ) can be used as the detectors 25 ⁇ and 25 ⁇ for the scale pattern 56 on the reticle R in FIG. 1.
  • the beam splitter 62 ⁇ is disposed between the beam splitters 62 ⁇ and 62C.
  • the second laser beam branched by the beam splitter 62 ⁇ is split into laser beams directed to the laser beam LB5 and the beam splitter 62C by the beam splitter 62 ⁇ .
  • the laser beam LB5 branched by the beam splitter 62 ⁇ is reflected by the mirror 63C, and is irradiated almost perpendicularly to the track having the origin pattern 74 ⁇ on the substrate ⁇ .
  • the detection signal of the photoelectric detector 64S is input to the origin signal generator 71.
  • the origin signal generator 71 is high when the input signal crosses a predetermined threshold level Sth. Generate the origin signal YAS to be level. This origin signal YSA is used to reset (or preset) the count value of the counter 69.
  • the LPF circuit 67B and the origin signal generator 68 of FIG. It is not done. It is also possible to omit the HPF circuits 67A and 67C in FIG. 7 and input the detection signals S 1 Y and S2Y directly to the counter 69.
  • FIG. 8 (A) shows a track 73 adjacent to the track 73YA in which the Y-axis L & S pattern 58YP (the Y component of the scale pattern 56P) is formed in the shot area SA of the substrate P.
  • the state where the origin pattern 74Y is formed on YB is shown.
  • the portion corresponding to the origin pattern 74Y is a light shielding pattern so as to be adjacent to the L & S pattern 58Y in the X direction.
  • a scale pattern is formed.
  • the origin coordinate 74Y can be used as the origin of the substrate P when the laser beam LB5 irradiation area of the detector 40A in FIG.
  • the configuration example of FIG. 7 includes an optical system that irradiates the substrate P with the laser beam LB;! To LB5, a Y-axis detection circuit 70Y, an X-axis detection circuit 70 ⁇ ⁇ , and an origin signal generator 71.
  • Detector 4 OA is configured.
  • the absolute pattern in the Y direction is rough! / And resolution (for example, about 0.1 mm) over the entire area in the Y direction of the scale pattern 56P of the shot area SA on the substrate P in FIG. 4 (B).
  • a non-periodic scale pattern may be provided that can be measured with.
  • FIG. 8 (B) shows a series of bar code 75A, 75B,..., Scale patterns provided on the track 73YB adjacent to the track 73YA on which the Y-axis L & S pattern 58YP is formed.
  • the detection signal (scattered light) obtained from the photoelectric detector 64S by irradiation with the laser beam LB5 in FIG. 7 changes in a nose shape at the rising and falling portions of the uneven pattern, so that an origin signal is generated.
  • the origin signal YAS output from the section 71 is a signal representing the edge of the uneven pattern such as the barcode 75A in FIG. 8B.
  • the absolute position in the Y direction can be roughly measured by setting patterns such as barcodes 75A and 75B so that the edge pattern does not overlap.
  • the substrate stage 34 in FIG. 1 is moved to the substrate loading position or the bridging alignment position, and the substrate P is used by using an alignment sensor (or alignment sensor 39) (not shown).
  • an alignment sensor or alignment sensor 39
  • the position of the substrate P is measured with an accuracy within one cycle such as the scale pattern 56P formed in each shot area on the substrate P. It is also possible. This means that the follow-up accuracy of the substrate P due to the bri alignment is within one cycle of the scale pattern 56P and the like. If the position of the shot area on the substrate P is driven within one cycle such as the scale pattern 56P due to bria alignment, the absolute position within that cycle can be obtained by reading the scale pattern 56P as described above. I can grasp it.
  • the scale pattern detectors 25A and 25B and the detectors 40A to 40H in addition to the method of detecting interference light or scattered light as shown in FIG. Etc. can also be used. Also, the scale pattern provided on each shot area of the substrate P in accordance with the use of a different array such as FIG. 2 (A) or FIG. 3 (A) as the array of scale patterns on the reticle R. The position also changes. Therefore, the scale pattern detectors 25A and 25B and the detectors 40A to 40H are attached to, for example, a slide mechanism (not shown), and the slide mechanism detects the scale according to the position of the scale pattern to be detected. The positions of 25A and 25B and detectors 40A to 40H may be adjusted.
  • the detectors 40A and 40B cause the detection areas 40AD and 40BD (the laser beam LB in FIG. 5A; the area irradiated with! To LB5) to the shot area SA6 in the + Y direction and the Y direction, respectively.
  • the detectors 40C and 40D are arranged so that the position of the scale pattern 56P in the adjacent shot areas SA7 and SA2 can be measured, and the detectors 40C and 40D are respectively adjacent to the shot area SA6—the shot area SA8 and the X direction To measure the position of scale pattern 56P in SA9 Placed in.
  • the detector 40H is arranged so that the position of the scale pattern 56P in the shot area SA1 adjacent to the shot area SA2 in the ⁇ Y direction can be measured by the detection area 40HD, and the detectors 40F and 40G are respectively shot.
  • the pair of detectors 40A and 40B can measure the position of the scale pattern in the shot areas SA7 and SA2 that sandwich the shot area SA6 where the projection area 17P is located in the scanning direction.
  • the pair of detectors 40C and 40D are arranged so that the position of the scale pattern in the shot areas SA8 and SA9 that sandwich the shot area SA6 in the non-scanning direction can be measured.
  • These first detectors 40A to 40D are used to obtain position information of the shot area SA6 to be exposed by interpolation when the shot area SA6 on the substrate P is exposed in the projection area 17P. .
  • the position of the scale pattern is measured in the shot area SA6 where the projection area 17P is located. not going.
  • the scale pattern 56P is a two-dimensional pattern, in order to measure the position information (X direction, Y direction position, and rotation angle) of the shot area SA6, two detectors ( For example, only detectors 40A and 40B) may be used!
  • the relative positional relationship between the shot area SA6 and the surrounding shot areas may be measured in advance before exposure.
  • a pair of detectors 40B and 40E (the detector 40B is shared with the first set) has shot areas SA2 and SA3 sandwiching the shot area SA1 where the detection area 40HD of the detector 40H is located in the scanning direction.
  • the pair of detectors 40F and 40G can measure the position of the scale pattern in the shot areas SA4 and SA5 that sandwich the shot area SA1 in the non-scanning direction. Is arranged.
  • These second set of five detectors 40B and 40E to 40H preliminarily expose the relative positions of the shot area to be exposed (here, the shot area SA1) and the surrounding shot areas SA2 to SA5. Used to measure the positional relationship.
  • the detector shared by the first group and the second group may be any of the detectors 40A to 40D.
  • the scale pattern 56P is a two-dimensional pattern, three detectors (for example, the detector 40H and the detector 40H) are used to measure in advance the relative positional relationship between the shot area SA1 and the surrounding shot areas. Only devices 40B, 40G) may be used. As a result, the total number of detectors used can be reduced to four (for example, detectors 40B, 40D, 40H, and 40G).
  • the stage drive system 43 that does not irradiate the exposure light IL drives the substrate stage 34 in the exposure apparatus EX of FIG.
  • the entire area of the scale pattern 56P in the shot areas SA2, SA3, SA4, SA1 and SA5 on the substrate P is detected with respect to the detection areas of the second set of five detectors 40B and 40E to 40H.
  • Move in the Y direction read the X and Y coordinates of the corresponding scale pattern 56P at the specified sampling rate using the detectors 40B and 40E to 40H, and sequentially read the measured values.
  • the read coordinates are also supplied to the stage drive system 43.
  • the operation of reading the coordinates of the scale pattern 56P on the substrate P by the detectors 40B, 40E to 40H is performed, for example, by using a plurality of predetermined shot areas on the substrate P using the alignment sensor 39 of FIG. When measuring the position of the alignment mark, it may be executed together.
  • exposure is started from a plurality of shot areas arranged in a row in the X direction on the + Y direction side, and then gradually exposed in the yacht area on the Y direction side. .
  • the detection signal power of the detectors 40B and 40E to 40H, and the scale pattern 56P of the shot area of the two rows ahead are detected.
  • ⁇ Detectors 40B and 40E that sandwich) in the Y direction read the X coordinate (XBi and XEi) of scale pattern 56P in shot areas SA2 and SA3, and detect shot area SA1 in the X direction.
  • the instruments 40F and 40G read the Y coordinates (YFi and YGi) of the scale pattern 56P in the shot areas SA4 and SA5.
  • the origin position of the scale pattern 56P in the entire shot area SA of this example is relatively the same position in the shot (such as Y in Fig. 6 (D)).
  • the stage drive system 43 sets the substrate stage so that the Y coordinates (YFi and YGi) of the scale pattern in the shot areas SA4 and SA5 have the same value. Controls the rotation angle around the 34 Z axis.
  • a series of differences between the Y coordinate YHi in the shot area SA1 (here, equal to YFi) and the average X coordinate ( (XBi + XEi) / 2) and shot in the shot areas SA2 and SA3
  • a series of differences ⁇ ⁇ with respect to the X coordinate XHi of the area SA1 is obtained, and these differences ⁇ ⁇ , ⁇ are stored in the storage device 46 in association with the shot area SA1 (prefetching step).
  • the detectors 40C and 40D that sandwich them in the X direction read the Y coordinate (YCi and YDi) of the scale pattern in the shot areas SA4 and SA5, and perform coordinate measurement and interpolation 45 To supply.
  • the stage drive system 43 is used as an example of a shot.
  • the rotation angle around the Z axis of the substrate stage 34 is controlled so that the Y coordinates (YCi and YDi) of the scale pattern in the areas SA4 and SA5 have the same value.
  • the coordinate measurement / interpolation system 45 interpolates the coordinate values of the supplied four scale patterns, and sequentially, the X and Y coordinates of the scale pattern in the shot area SA1 being exposed. Find (XPi, YPi).
  • the substrate stage 34 is adjusted so that the X coordinate XPi of the shot area SA1 becomes a substantially constant value and the Y coordinate YPi changes at a constant speed so that an appropriate exposure amount can be obtained on the substrate P.
  • the stage drive system 43 calculates the coordinates (XRi, YRi) of the reticle R1 (reticle stage 21) corresponding to the coordinates (XPi, YPi) of the shot area SA1.
  • the stage drive system 43 drives the reticle stage 21 based on the measurement values of the laser interferometers 23X and 23Y so that the coordinates of the reticle R1 become (XRi, YRi) (actual scanning exposure process).
  • the reticle R1 on the shot area SA1 on the substrate P is not affected by fluctuations in the measurement values of the laser interferometers 38X and 38Y on the substrate stage 34 side (due to gas fluctuations in the optical path). Pattern images can be overlaid with high accuracy.
  • the above-described pre-reading process may be executed in parallel.
  • FIG. 9 when an image of the pattern of reticle R1 is exposed to shot area SA1 on substrate P, one shot area is separated from shot area SA1 on substrate P in the Y direction.
  • shot area SA10 using detectors 40B, 40E to 40H, This means measuring the relative positional relationship between the shot area SA10 and the four surrounding shot areas. This can improve the throughput of the exposure process for substrate P.
  • FIG. 2A When the pattern 56 for scale 56 is also formed in the pattern region 51 of the reticle R1, as shown in FIG. 2A, in the actual scanning exposure process described above, FIG.
  • the X and Y coordinates of the scale pattern 56 of the reticle R1 may be measured using the detectors 25A and 25B, and the reticle stage 21 may be driven based on the measured values.
  • the overlay accuracy can be improved because there is no influence of fluctuations in the measured values of the laser interferometers 23X and 23Y caused by gas fluctuations in the optical path of the laser interferometers 23X and 23Y on the reticle side. .
  • a predetermined run-up distance may be required to accelerate the reticle stage 21 and the substrate stage 34 of Fig. 1 to the target speed.
  • the detector 40A to 40D may detect the scale pattern in the shot area adjacent in the Y direction with respect to the shot areas SA2 to SA5, and drive the substrate stage 34 and the reticle stage 21 based on the detection result! .
  • the offset of the position of the scale pattern (offset within one cycle) between the shot area in the run-up section and the shot areas SA2 to SA5 is obtained in advance, and the offset is calculated in the run-up section. By adding this value, the effect of misalignment when switching from running to exposure can be reduced.
  • (A1) According to the above-described exposure apparatus EX in FIG. 1, in order to expose the shot area SA1 on the substrate P in FIG. 9 via the projection optical system PL, when the exposure light IL is irradiated to the shot area SA1
  • the laser beam is irradiated from the detectors 40A to 40D without passing through the projection optical system PL into the measurement target area consisting of the shot areas SA2 to SA5 on the substrate P whose positional relationship with the shot area SA1 is known.
  • the position information of the shot areas SA2 to SA5 is measured, and the position information of the shot area SA1 is measured from the measurement results.
  • the substrate stage 34, the coordinate measurement / interpolation system 45, and the stage are measured.
  • the drive system 43 controls the relative positional relationship between the projection area 17P of the exposure light IL and the shot area SA1.
  • the pattern image of the reticle R1 can be exposed with high accuracy on the shot area SA1.
  • a liquid is interposed between the projection optical system PL and the substrate P in order to measure position information by irradiating the measurement target region with a laser beam without passing through the projection optical system PL.
  • the exposure method can also be applied when exposure is performed by a liquid immersion method.
  • the force for measuring the position of the scale pattern 56P in the shot area SA is used for the shot.
  • the position of the area SA may be measured.
  • the photoresist PR on the substrate P is used as the laser beam. It is possible to use light having a wavelength range that does not expose the light. (A3) Further, in the above embodiment, when the shot area SA1 on the substrate P in FIG. 9 is exposed with the exposure light IL, the mechanism including the substrate stage 34 and the stage drive system 43 is relatively moved.
  • the substrate P and the projection region 17P are moved relative to each other in the scanning direction (Y direction) while a part of the shot region SA1 is exposed to the projection region 17P (exposure light IU), and measurement on the substrate P is performed.
  • the target shot areas SA2 to SA5 are irradiated with laser beams from the detectors 40A to 40D, and the positional information of the shot area SA1 is continuously measured. Based on the measurement results, the projection area 17P and the shot area SA1 are Therefore, the overlay accuracy can be improved when performing exposure by the scanning exposure method.
  • the convex or concave pattern 57P (first pattern part) and the characteristics (height, ie, phase) for the laser beam are
  • the base portion (second pattern portion) different from the pattern 57P includes a pattern alternately arranged in the X direction and the Y direction
  • the position of the scale pattern 56P can be easily detected by the detector 40A.
  • the different characteristic may be, for example, the reflectance with respect to the laser beam.
  • the scanning direction of the first pattern part (72YA to 72YD) and the second pattern part (background) is part of the Y-axis L & S pattern 58YP.
  • the detection signal is detected as the laser beam and the measurement target shiyota area move relative to each other in the scanning direction.
  • the reference part is accommodated. Easy to identify. This makes it possible to measure the absolute position of the position where the laser beam of the L & S pattern 58YP with respect to the reference portion is irradiated in the shot area to be measured.
  • the scale pattern 56P force is periodically formed in the direction intersecting the scanning direction (vertical non-scanning direction in Fig. 5 (A)). If the L & S pattern 58XP is included, the L & S pattern 58XP is irradiated with a laser beam, so that the laser beam and the shot area to be measured move relatively in the scanning direction. A periodic detection signal SIX corresponding to the relative displacement in the non-scanning direction with the shot area to be measured can be detected. As a result, the position in the non-scanning direction of the shot area (scale pattern 56P) to be measured can be accurately measured.
  • a non-periodic origin pattern 74 Y in the scanning direction for origin signal detection As a scale pattern, as shown in FIG. 8, apart from the periodic Y-axis L & S pattern 58YP, a non-periodic origin pattern 74 Y in the scanning direction for origin signal detection
  • the origin pattern 74Y is irradiated with a laser beam
  • the laser beam and the shot area to be measured have a specific positional relationship in the scanning direction (here, the edge of the origin pattern 74Y It is possible to detect a state in which the laser beam is irradiated on the part. This makes it possible to measure the absolute position within the shot area to be measured.
  • the shot area force to be measured is shot area S during exposure.
  • the position of the shot area SA1 during the exposure can be measured with high accuracy by interpolation or the like.
  • the shot area force to be measured includes shot areas SA4 and SA5 adjacent in the non-scanning direction to the shot area SA1 being exposed, the position in the scanning direction can be measured with high accuracy.
  • the shot area force of the measurement target includes shot areas SA2 and SA3 that are adjacent to the shot area SA1 in the exposure direction, particularly in the non-scan direction. It can be measured.
  • the shot area SA1 Before the irradiation of the exposure light IL is started, as shown in FIG. 4 (A), the shot areas SA2 to SA5 to be measured and the shot area SA1 to be exposed are irradiated with a laser beam in advance. Thus, it is preferable to detect positional relationship information between the shot areas SA2 to SA5 to be measured and the shot area SA1 to be exposed. As a result, when the shot area SA1 is actually exposed, the position of the shot area SA1 can be interpolated with high accuracy from the position information of the surrounding shot areas SA2 to SA5 to be measured.
  • FIG. 4 (A) a detector for detecting the position of the scale pattern 56P in the shot area SA6 where the projection area 17P is located is not provided.
  • a detector for detecting the position of the scale pattern 56P in the shot area SA6 where the projection area 17P is located is not provided.
  • FIG. 11 is a perspective view showing the vicinity of the projection area 17P by the projection optical system PL of the exposure apparatus of this example.
  • projection is performed on the projection area 17P on the shot area SA on the substrate P.
  • the exposure light IL is irradiated through the shadow optical system PL, the substrate P moves in the + Y direction, for example, and the reticle pattern image is exposed on the yacht area SA.
  • the center of the shot area SA A scale pattern 56P is formed on the scribe line along the Y direction of the part, and a measurement laser beam is incident obliquely between the lower end of the projection optical system PL and the substrate ⁇ , and the scale pattern 56P
  • a detector 78 for reading the positions in the X and Y directions is arranged.
  • the laser beam force emitted from the laser light source 61 is converted into the laser beam LB1 and the second laser beam by the beam splitter 62A.
  • This second laser beam is split into a laser beam LB2 and a fourth laser beam by the beam splitter 62C.
  • the fourth laser beam is reflected by the mirror 63A, it is divided into two laser beams LB3 and LB4 by the beam splitter 62D, and the laser beam LB4 is reflected by the mirror 63B.
  • the two laser beams LB1 and LB2 are incident on the scale pattern 56P on the substrate P while being largely inclined around an axis parallel to the Y axis and substantially symmetrically in the Y direction.
  • the interference light LBY between the + first-order diffracted light of the laser beam LB1 and the first-order folded light of the laser beam LB2 enters the photoelectric detector 64Y.
  • the detection signal of the photoelectric detector 64Y By inputting the detection signal of the photoelectric detector 64Y to a detection circuit similar to the Y-axis detection circuit 70Y in FIG. 5A, the position in the Y direction of the scale pattern 56P can be measured.
  • the two laser beams LB3 and LB4 are inclined substantially symmetrically in the X direction in a state of being largely inclined clockwise around an axis parallel to the X axis with respect to the scale pattern 56P.
  • Incident light LBX between the + 1st order diffracted light of the laser beam LB3 and the 1st order diffracted light of the laser beam LB4 enters the photoelectric detector 64X.
  • the detection signal of the photoelectric detector 64X By inputting the detection signal of the photoelectric detector 64X to a detection circuit similar to the X-axis detection circuit 70X in FIG. 5A, the position in the X direction of the scale pattern 56P can be measured.
  • Other configurations are the same as those of the embodiment of FIG.
  • the shot area SA itself under exposure is set as the measurement target area, and the shot area SA is irradiated with the laser beam from the detector 78 without passing through the projection optical system PL. Then, the position information of the shot area SA is measured. Based on the measurement result, the projection area 17P of the exposure light IL is obtained by the substrate stage 34, the coordinate measurement / interpolation system 45, and the stage drive system 43 in FIG. And the relative positional relationship between the shot area SA and the shot area SA can be controlled. Therefore, the overlay accuracy can be improved, and the present invention can be applied to the case where exposure is performed by a liquid immersion method. Even when exposure is performed by the liquid immersion method, an optical autofocus sensor using the oblique incidence method can be used, and thus the detector 78 can also be used.
  • a detector 401 for reading the scale pattern 56 ⁇ in the shot regions SA14, SA15, SA16, SA17 in a direction adjacent to the + ⁇ ⁇ ⁇ ⁇ direction in the non-scanning direction with respect to the shot region SA6 where the projection region 17P is located 401 , 40J, 40 ⁇ , 40L are installed.
  • the configuration of the detectors 40I to 40L is the same as that of the detector 40A.
  • the projection area 17P on the substrate P shifts to a shot area adjacent in the non-scanning direction every time scanning exposure of one shot area SA is completed.
  • the substrate P side moves relative to the projection region 17P. Therefore, when the projection region 17P gradually shifts to the shot region in the X direction with respect to the substrate P as shown by the locus TPL in FIG. 12, the five detectors 40C, 40E to 40X on the X direction side with respect to the projection region 17P By using the detection result of 4 OH, it is possible to prefetch the relative positional relationship between the shot area exposed by the projection area 17P and the shot area surrounding it.
  • the detection results of the five detectors 40D and 40I to 40L on the + X direction side with respect to the projection area 17P are displayed.
  • the position detection result of the four detectors 40A to 40D surrounding the projection area 17P is used to determine the exposure pattern in the projection area 17P and the shot area to be exposed. Superposition can be performed with high accuracy.
  • the positional relationship between the shot area to be exposed at the same time and the surrounding shot areas at the time of scanning exposure can be obtained. Prefetching is possible, and the throughput of the exposure process is kept high. Since the detectors 40E to 40L can detect the positions in the X direction and the Y direction, respectively, the detectors 40E and 40G and the detectors 40J and 40K can be omitted in the arrangement of FIG.
  • the exposure apparatus of the above embodiment includes an illumination optical system composed of a plurality of lenses, a projection optical system incorporated in the exposure apparatus main body, and optical adjustment, and a reticle stage made up of a large number of mechanical parts. It can be manufactured by attaching a substrate stage to the main body of the exposure apparatus, connecting wiring and piping, and making overall adjustments (electrical adjustment, operation check, etc.). It is desirable to manufacture the exposure apparatus in a clean room where the temperature and cleanliness are controlled.
  • the present invention can be similarly applied not only to exposure with a scanning exposure type projection exposure apparatus but also with a batch exposure type projection exposure apparatus.
  • a force using a light-transmitting reticle in which a predetermined light-shielding pattern (or phase pattern / dimming pattern) is formed on a light-transmitting substrate instead of this reticle,
  • a predetermined light-shielding pattern or phase pattern / dimming pattern
  • this reticle For example, as disclosed in US Pat. No. 6,778,257, an electronic mask that forms a transmission pattern, a reflection pattern, or a light emission pattern based on electronic data of a pattern to be exposed is used. Motole.
  • the power for exposing the substrate by projecting the pattern image onto the substrate P using the projection optical system PL is disclosed in International Publication No. WO 2001/035168.
  • an exposure apparatus lithography system
  • a diffraction grating for forming interference fringes that do not require the use of the projection optical system PL can be regarded as an optical system.
  • the semiconductor device has a function function / performance design step, a reticle manufacturing step based on this step, a silicon material,
  • the present invention is not limited to application to a semiconductor device manufacturing process.
  • a liquid crystal display element formed on a square glass plate or the like, or a display device such as a plasma display is manufactured.
  • various devices such as processes, imaging devices (CCD, etc.), micromachines, MEMS (Microelectromechanical Systems), ceramic wafers, etc. as substrates, and DNA chips Widely applicable.
  • the present invention can also be applied to a manufacturing process when manufacturing a mask (photomask, reticle, etc.) in which a mask pattern of various devices is formed using a photolithographic process.

Abstract

L'invention concerne un procédé d'exposition qui peut également être appliqué à une exposition par immersion, et qui permet d'obtenir une grande précision d'alignement. Au moment de l'exposition d'une surface de pose (SA1) sur un substrat (P) par balayage relatif d'un substrat (P) et d'une surface de projection (17P), dans un état où l'image d'un motif réticulaire est projetée sur la surface de projection (17P) sur le substrat (P) par un système optique de projection, une lumière de mesure est appliquée à l'intérieur de surfaces de pose (SA2-SA5) adjacentes à la surface de pose (SA1), sans passer par le système de projection optique, et des informations de position sont obtenues. Sur la base des informations sur la position de la surface de pose (SA1) obtenues à partir des résultats des mesures, la position relative entre la surface de projection (17P) et la surface de pose (SA1) est contrôlée.
PCT/JP2007/073367 2006-12-08 2007-12-04 Procédé et appareil d'exposition, et procédé de fabrication de dispositif WO2008072502A1 (fr)

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JP2010251484A (ja) * 2009-04-14 2010-11-04 Canon Inc 露光装置、露光方法およびデバイス製造方法
JP2012084793A (ja) * 2010-10-14 2012-04-26 Nikon Corp 露光方法、サーバ装置、露光装置及びデバイスの製造方法
JP2016505812A (ja) * 2012-11-19 2016-02-25 エーエスエムエル ネザーランズ ビー．ブイ． 位置測定システム、位置測定システムの格子及び方法
US9930887B2 (en) 2011-12-12 2018-04-03 Okayama Prefecture Compound for increasing amino acid content in plant, and use thereof

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JPS53137673A (en) * 1977-05-03 1978-12-01 Massachusetts Inst Technology Device for and method of matching plate position
JPS60130742A (ja) * 1983-12-19 1985-07-12 Nippon Kogaku Kk <Nikon> 投影露光装置の位置合せ装置
JPH06267828A (ja) * 1993-03-11 1994-09-22 Toshiba Corp 位置合せ装置
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JPH07335529A (ja) * 1994-06-09 1995-12-22 Nikon Corp 投影露光装置
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010251484A (ja) * 2009-04-14 2010-11-04 Canon Inc 露光装置、露光方法およびデバイス製造方法
JP2012084793A (ja) * 2010-10-14 2012-04-26 Nikon Corp 露光方法、サーバ装置、露光装置及びデバイスの製造方法
US9930887B2 (en) 2011-12-12 2018-04-03 Okayama Prefecture Compound for increasing amino acid content in plant, and use thereof
JP2016505812A (ja) * 2012-11-19 2016-02-25 エーエスエムエル ネザーランズ ビー．ブイ． 位置測定システム、位置測定システムの格子及び方法
US9651877B2 (en) 2012-11-19 2017-05-16 Asml Netherlands B.V. Position measurement system, grating for a position measurement system and method

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JPWO2008072502A1 (ja) 2010-03-25

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