WO2008072502A1

WO2008072502A1 - Exposure method and apparatus, and device manufacturing method

Info

Publication number: WO2008072502A1
Application number: PCT/JP2007/073367
Authority: WO
Inventors: Dai Arai
Original assignee: Nikon Corporation
Priority date: 2006-12-08
Filing date: 2007-12-04
Publication date: 2008-06-19
Also published as: JPWO2008072502A1; TW200842503A

Abstract

An exposure method which can be applied also to liquid immersion exposure is provided, and high alignment accuracy can be obtained through such method. At the time of exposing a shot area (SA1) on a substrate (P) by relatively scanning a substrate (P) and a projection area (17P), in a status where an image of a reticle pattern is projected on the projection area (17P) on the substrate (P) through a projection optical system, measuring light is applied within shot areas (SA2-SA5) adjacent to the shot area (SA1), not through the projection optical system, and position information is measured. Based on the position information of the shot area (SA1) obtained from the measurement results, relative positional relationship between the projection area (17P) and a shot area (SA1) is controlled.

Description

Specification

Exposure method and apparatus, and device manufacturing method

Technical field

The present invention relates to an exposure technique for exposing an object through an optical system and a device manufacturing technique using this exposure technique, and relates to various devices such as a semiconductor integrated circuit, a liquid crystal display element, or a thin film magnetic head. It can be applied to transfer a pattern such as a mask onto a substrate in a lithographic process for manufacturing.

Background art

[0002] For example, in a lithographic process for manufacturing a semiconductor integrated circuit, a wafer (or glass) on which a resist as a photosensitive substrate is applied to a pattern formed on a reticle (or a photomask) via a projection optical system. For example, an exposure apparatus such as a batch exposure type projection exposure apparatus such as a stepper or a scanning exposure type projection exposure apparatus such as a scanning stepper is used to transfer the image to each shot area of a plate. In these exposure apparatuses, when the reticle pattern is superimposed on the second and subsequent layers on the wafer for exposure, the circuit pattern formed in the previous process in each shot area on the wafer, and the exposure from now on. Therefore, it is necessary to maintain a high overlay accuracy with the reticle pattern image.

[0003] Therefore, in conventional exposure apparatuses, a laser interferometer that measures the position of a reticle and a stage that drives a wafer with high accuracy, and a reticle mark that measures the position of a reticle-side alignment mark (reticular mark), for example, are used. It has a alignment microscope and alignment sensor that measures the position of the wafer side alignment mark (wafer mark). For example, in the case of alignment using the enhanced alignment (EGA) method disclosed in Japanese Patent Publication No. 4-47968, a wafer mark attached to a predetermined shot area on the wafer is used. The array coordinates of each shot area on the wafer with respect to the projection position of the reticle pattern were obtained by statistically processing the measurement results of the positions. After that, the stage is driven to perform exposure based on the array coordinates and the measurement value of the laser interferometer, and thereby each shot area on the wafer (the circuit pattern formed in the previous process). ) And the reticle pattern image was overlaid and exposed! [0004] In addition, in order to further improve the overlay accuracy particularly in a scanning exposure type exposure apparatus, a wafer mark is formed in advance in each scanning region on the wafer substantially continuously or at a predetermined interval in the scanning direction, and exposure is now performed. An exposure method has also been proposed in which a reticle mark corresponding to the scanning direction is also formed on the reticle. In this exposure method, for example, one stage is set so that the positional deviation between the wafer mark and the corresponding reticle mark is measured by a predetermined sensor and the measured positional deviation is corrected. By adjusting the position, the reticle pattern image was actually superimposed on each shot area on the wafer (see, for example, Patent Document 1).

Patent Document 1: Japanese Patent No. 3084773

Disclosure of the invention

Problems to be solved by the invention

[0005] In a conventional exposure apparatus, a laser interferometer is used to measure the stage position with high accuracy. The laser interferometer is configured to move gas in the optical path of the laser beam due to movement of the stage. When fluctuation occurs, the measured value may slightly fluctuate. Such fluctuations in measured values are almost within the allowable range for the overlay accuracy that is currently required, but in the future, overlay accuracy will be increased in response to further miniaturization of semiconductor integrated circuits and the like. In order to improve the accuracy, it is necessary to reduce the influence of fluctuations in the measurement values of the laser interferometer.

[0006] In addition, according to the scanning exposure type exposure method that actually measures the amount of positional deviation between the reticle mark and the wafer mark continuously during the conventional exposure, the variation in the measured value of the laser interferometer is practical. Therefore, it is possible to increase the overlay accuracy without being influenced by the process. However, this exposure method is difficult to apply when exposure is performed by the immersion method, which has recently been attracting attention in order to increase the resolution of the projection optical system and increase the depth of focus. Or, there is a risk that the measurement accuracy of the positional deviation amount of both marks will be reduced.

In view of such problems, the present invention is applicable to exposure using a liquid immersion method, and also provides an exposure technique and a device manufacturing technique capable of obtaining high overlay accuracy. aimed to.

Means for solving the problem [0008] An exposure method according to the present invention is an exposure method in which a predetermined area (SA1) on an object (P) is irradiated with exposure light via an optical system (PL) to expose the predetermined area. When the area is irradiated with the exposure light, the optical system is in the measurement area (SA2 to SA5) consisting of the predetermined area on the object or the area on the object whose positional relationship is known. Irradiate measurement light without passing through, measure the position information of the specified area, and control the relative positional relationship between the exposure light and the specified area based on the measurement result of the position information! To do.

In addition, the exposure apparatus according to the present invention includes a predetermined region (SA on the object (P) through the PU).

An exposure apparatus that irradiates exposure light to 1) and exposes the predetermined area, and when the exposure light is irradiated to the predetermined area, the predetermined area on the object or the positional relationship with the predetermined area Measuring device (40A to 40D) that irradiates the measurement area (SA2 to SA5) consisting of the area on the object with the known area without measuring the optical system and measures the position information of the predetermined area ) And a control device (34, 43, 45) for controlling the relative positional relationship between the exposure light and the predetermined region based on the measurement result of the measurement device.

The device manufacturing method according to the present invention uses the exposure apparatus of the present invention. The reference numerals in parentheses attached to the above-mentioned predetermined elements of the present invention are the forces corresponding to the members in the drawings showing an embodiment of the present invention. The elements of the invention are merely illustrated, and the present invention is not limited to the configuration of the embodiment.

The invention's effect

According to the exposure method of the present invention, the relative positional relationship between the exposure light and the predetermined area on the object is controlled using the actual measurement result of the position information of the measurement area on the object. Thus, a pattern (image) or the like can be exposed on the predetermined area with high overlay accuracy. In addition, since the position information of the measurement area is measured without going through the optical system, even when exposure is performed by the immersion method with a liquid interposed between the optical system and the object. The present invention is applicable.

According to the exposure apparatus of the present invention, when the object is exposed, the control apparatus controls the exposure light and the exposure light based on the position information of the measurement area obtained by the measurement apparatus. The exposure method of the present invention can be used by controlling the relative positional relationship with a predetermined area. Thereby, the liquid immersion method can be applied and high overlay accuracy can be obtained. According to the device manufacturing method of the present invention, a high overlay accuracy can be obtained when exposure is performed on the second and subsequent layers of a substrate or the like, so that a device having a fine pattern can be manufactured with high accuracy.

Brief Description of Drawings

FIG. 1 is a perspective view showing a projection exposure apparatus used in an example of an embodiment of the present invention.

[FIG. 2] (A) is a plan view showing reticle R used for exposure of the first layer of substrate P in FIG.

(B) is an enlarged view showing a part of scale pattern 56 of reticle R. FIG.

[FIG. 3] (A) is a plan view showing another example of a scale pattern formed on the reticle R, (B

) Is an enlarged view showing a part of the scale pattern 59Y of FIG. 3 (A).

[FIG. 4] (A) is a plan view showing an example of the shot arrangement of the substrate P in FIG. 1, (B) is an enlarged plan view showing the yacht area SA of FIG. 4 (A), and (C) is FIG. FIG. 6B is an enlarged plan view showing a part of the scale pattern 56P in (B).

5A is a perspective view showing a configuration example of the detector 40A included in the exposure apparatus of FIG. 1, FIG. 5B is an enlarged view showing an L & S pattern 58YP as a scale pattern, and FIG. 5C is an L & S pattern. It is a figure which shows detection signal S1Y detected corresponding to 58YP.

[Fig. 6] (A) is an enlarged view showing another example of the scale pattern, (B) is a diagram showing the detection signal S1Y detected corresponding to the pattern of Fig. 7 (A), (C) and (D) is a diagram showing a signal obtained by separating from the detection signal S1Y.

7 is a perspective view showing another configuration example of the detector 40A provided in the exposure apparatus of FIG.

FIG. 8A is an enlarged view showing an example including an origin pattern as a scale pattern, and FIG. 8B is an enlarged view showing an example including an absolute position detection pattern as a scale pattern.

Yes

FIG. 9 is a plan view showing a state where the shot area SA1 on the substrate P in FIG. 1 is exposed.

FIG. 10 is an enlarged view showing an example of a scale pattern formed in a shot region on a substrate P in FIG.

FIG. 11 is a perspective view showing a main part of another example of the embodiment of the present invention. FIG. 12 is a diagram showing an arrangement of a plurality of detectors 40 A, etc., on a substrate-side scale pattern in another example of an embodiment of the present invention.

Explanation of symbols

[0013] R, R1 ... reticle, PL ... projection optical system, 基板 · · substrate, 17Ρ · · projection area, 21 · · · reticle stage, 25A, 25B ... detector, 34 ... substrate stage, 40A to 40H ... Detector 41 · · · Main control system 43 · · Stage drive system 45 · · Coordinate measurement · Interpolation system 56 · · · Reticle scale pattern 56 · · · Board side Scale pattern

BEST MODE FOR CARRYING OUT THE INVENTION

[0014] Hereinafter, an example of a preferred embodiment of the present invention will be described with reference to FIGS.

In this example, the present invention is applied to the case where exposure is performed with a scanning exposure type exposure apparatus (projection exposure apparatus) made of a scanning stagger.

FIG. 1 shows a schematic configuration of an exposure apparatus EX of this example. In FIG. 1, the exposure apparatus EX includes an exposure light source 1 and a reticle R (mask) on which a transfer pattern is formed is exposed to exposure light IL ( Illumination optical system 16 that illuminates with exposure beam), reticle stage 21 that drives reticle R, projection optical system PL that projects an image of the pattern of reticle R onto substrate P, and substrate stage that drives substrate P 34, a drive system for these stages, a main control system 41 composed of a computer that comprehensively controls the operation of the entire apparatus, and a processing system for performing various other controls and operations. As the exposure light source 1, an ArF excimer laser light source (wavelength: 193 nm) is used. Exposure light sources include KrF excimer laser light source (wavelength 247 nm), ultraviolet pulse laser light source such as F laser light source (wavelength 157 nm), harmonic generation light source of YAG laser, harmonic generation of solid-state laser (semiconductor laser, etc.) Equipment or mercury lamps (i-line etc.) can also be used.

[0015] The exposure light IL pulsed from the exposure light source 1 at the time of exposure passes through the mirror 2, a beam shaping optical system (not shown), the first lens 3A, the mirror 4, and the second lens 3B, and the cross-sectional shape becomes a predetermined shape. After being shaped, the light enters the fly's eye lens 5 as an optical integrator, and the illuminance distribution is made uniform. On the exit surface of the fly-eye lens 5 (pupil surface of the illumination optical system 16), an aperture for determining illumination conditions by setting the exposure light intensity distribution to a circle, multiple eccentric regions, an annular zone, a small circle, etc. Opening of illumination system with diaphragm (σ diaphragm) 7A, 7mm, 7C, 7D, etc. An aperture stop member 6 is rotatably arranged by a drive motor 8. The main control system 41 rotates the illumination system aperture stop member 6 via the drive motor 8 to set the illumination conditions.

[0016] The exposure light IL that has passed through the aperture stop in the illumination system aperture stop member 11 passes through a beam splitter 9 and a relay lens 12A having a low reflectivity, and then a fixed blind (fixed field stop) 13A and a movable blind (movable field of view). Aperture) Pass sequentially through 13B. The movable blind 13B is arranged on a plane almost conjugate with the pattern plane (reticle plane) of the reticle R, and the fixed blind 13A is arranged on a plane slightly defocused from the plane conjugate with the reticle plane.

The fixed blind 13A is used to define the illumination area 17R on the reticle surface as a slit-like area elongated in the non-scanning direction perpendicular to the scanning direction of the reticle R. The movable blind 13B is used to close the illumination area 17R in the scanning direction so that unnecessary areas are not exposed at the start and end of the scanning exposure on the exposure area on the substrate P. Is done. The movable blind 13B is further used to define the center and width of the illumination area 17R in the non-scanning direction. The exposure light IL that has passed through the blinds 13A and 13B illuminates the illumination area 17R of the pattern area of the reticle R with a uniform illuminance distribution through the sub condenser lens 12B, the mirror 14 for bending the optical path, and the main condenser lens 15. To do.

On the other hand, the exposure light reflected by the beam splitter 9 is received by the integrator sensor 11 including a photoelectric sensor via the condenser lens 10. The detection information of the integrator sensor 11 is supplied to an exposure amount control system 42. The exposure amount control system 42 uses the detection information and information on the transmittance of the optical system from the beam splitter 9 to the substrate P, which is measured in advance. The energy of the exposure light IL on the substrate P is indirectly calculated. Based on the integrated value of the calculation result and the control information from the main control system 41, the exposure amount control system 42 emits light from the exposure light source 1 so that an appropriate exposure amount can be obtained on the surface (exposure surface) of the substrate P. To control. The illumination optical system 16 includes members from the exposure light source 1 to the main condenser lens 15.

[0019] Under the exposure light IL, the pattern in the illumination area 17R of the reticle R is projected to the projection magnification / 3 (/ 3 is 1/4, 1/5, etc.) ) Is projected onto a projection area 17P elongated in the non-scanning direction on one shot area SA on the substrate P. The substrate P is a disk-shaped semiconductor substrate (e.g. silicon or SO silicon on insulator) in this example. Eno) is coated with a photoresist (photosensitive material). The projection optical system PL is, for example, a refractive system, but a catadioptric system or the like can also be used. Hereinafter, in FIG. 1, the Z-axis is taken parallel to the optical axis AX of the projection optical system PL, and along the non-scanning direction orthogonal to the scanning direction of the reticle R and the substrate P during scanning exposure in a plane perpendicular to the Z-axis. Take the X axis and take the Y axis along the scanning direction.

First, the reticle R is held by suction on the reticle stage 21, and the reticle stage 21 moves on the reticle base 22 at a constant speed in the Y direction, and for example, a synchronization error (or a pattern image of the reticle R and the substrate P on the substrate P). The reticle R is scanned by slightly moving in the X, Y, and Z axis rotation directions so as to correct the misalignment with the shot area during exposure. Reticle stage 21 is arranged with laser interferometers 23X and 23Y arranged so as to face the reflecting surfaces (or moving mirrors, corner reflectors, etc.) on the X and Y sides of reticle stage 21, for example, with respect to projection optical system PL. The position of 21 is measured and the measured value is supplied to the stage drive system 43 and the main control system 41! /.

In this example, a scale pattern 56 for measuring positional information of the reticle R in the X direction and the Y direction is formed in the pattern area of the reticle R along the Y direction. In addition, a pair of detectors for detecting the position information of the scale pattern 56 via the optical path bending mirror at a position sandwiching the illumination area 17R above the reticle R in the Y direction (scanning direction). 25A and 25B are arranged, and the detection results of the detectors 25A and 25B are supplied to a coordinate measurement / interpolation system 45 including an arithmetic unit. A storage device 46 such as a magnetic disk device is connected to the coordinate measurement / interpolation system 45, and the position information of the reticle R is obtained and supplied to the stage drive system 43 as will be described later. The scale pattern 56 and detectors 25A and 25B constitute an encoder that directly measures the position information of the reticle R (including information on the movement and / or absolute position (origin position) in the pattern area). . Details of this encoder and coordinate measurement / interpolation system 45 will be described later.

[0022] The method for driving the reticle stage 21 in this example includes first and second drive modes set by the main control system 41 in accordance with an operator's designation. In the first drive mode, the stage drive system 43 is based on measurement values of the laser interferometers 23X and 23Y and control information from the main control system 41! /, Based on a drive mechanism (not shown) such as a linear motor. Reticle stays through Control the position and speed of the 21. On the other hand, in the second drive mode, the stage drive system 43 controls the position information of the reticle R output from the coordinate measurement / interpolation system 45 based on the measurement values of the detectors 25A and 25B and the control from the main control system 41. Based on the information, the position and speed of the reticle stage 21 are controlled. If the reticle stage 21 of this example is driven only in the first drive mode, the detectors 25A and 25B can be omitted. When the exposure apparatus of this example is driven only in the second drive mode, the laser interferometers 23X and 24Y are omitted, or the position of the scale is measured by a sensor such as an optical type or a capacitance type. It is possible to substitute a measuring instrument with a coarse resolution.

[0023] Further, alignment mark 52A and so as to sandwich the pattern area of reticle R in the X direction.

52B is formed. Above the periphery of the reticle R, reticle alignment microscopes 24A and 24B for detecting the positions of the alignment marks 52A and 52B via optical path bending mirrors are arranged. The detection signals of the reticle alignment microscopes 24A and 24B are supplied to the alignment signal processing system 44, and the alignment signal processing system supplies the main control system 41 with information on the mark position detected by the image processing method.

On the other hand, the substrate P is sucked and held on the substrate stage 34 via the substrate holder 31, and the substrate stage 34 moves on the base member 35 at a constant speed in the Y direction, and in the X direction and the Y direction. An XY stage 33 that moves in steps and a Z tilt stage 32 are provided. The Z tilt stage 32 performs focusing and leveling of the substrate P based on the measurement values of the positions in a plurality of positions on the substrate P by an auto focus sensor (not shown). The substrate holder 31 has a force represented by a flat plate in FIG. 1 Actually, the mounting surface of the substrate P of the substrate holder 31 is a recess, and the surface of the substrate P and the substrate holder 31 on the outside thereof are arranged. The surface of is set to almost the same height in the Z direction. Further, the laser beam interferometers 38X and 38Y arranged so as to face the reflecting surfaces (or moving mirrors, etc.) on the side surfaces in the X direction and the Y direction of the substrate stage 34, for example, the substrate stage 34 with reference to the projection optical system PL. The position in the XY plane and the rotation angles around the X, Y, and Z axes are measured, and the measured values are supplied to the stage drive system 43 and the main control system 41.

[0025] In this example, when the exposure is performed on the second and subsequent layers of the substrate P, each of the shot areas on the substrate P has a scale pattern 56 on the reticle R in the previous process. (Or it A scale pattern corresponding to the image of the reticle scale pattern used in the previous steps is formed! The scale pattern on the substrate P side is, for example, a concavo-convex pattern on which a photoresist is applied. Then, the position information of the scale pattern in the X direction and the Y direction so that the projection region 17P is sandwiched in the Y direction (scanning direction) and the X direction (non-scanning direction) on the side surface of the lower end of the projection optical system PL. A pair of detectors 40A and 40B and a pair of detectors 40C and 40D are arranged for measuring. In addition, four detectors 40E, 40F, 40G, and 40G for measuring positional information in the X and Y directions of the scale pattern on the substrate P in the Y side surface direction at the lower end of the projection optical system PL. 40H is arranged, and the detection results of the detectors 40A to 40H are also supplied to the coordinate measurement / interpolation system 45. The configuration and arrangement of the eight detectors 40A to 40H will be described later. From the scale pattern and detectors 40A to 40H formed in each shot area of the substrate P, the position information of the substrate P (including information on the movement amount and / or the absolute position (origin position) in each shot area) An encoder for direct measurement is configured.

[0026] The driving method of the substrate stage 34 of the present example also has first and second driving modes set by the main control system 41 in accordance with an operator's designation. In the first drive mode (for example, set when exposure is performed on the first layer on the substrate P), the stage drive system 43 receives the measurement values from the laser interferometers 38X and 38Y and the main control system 41. Based on the control information, the position and speed of the substrate stage 34 are controlled via a drive mechanism (not shown) such as a linear motor. On the other hand, in the second drive mode (for example, set when exposure is performed on the second layer and subsequent layers on the substrate P), the stage drive system 43 is based on the measurement values of the detectors 40A to 40H and performs coordinate measurement / interpolation system. Based on the position information of the substrate P output from 45 and the control information from the main control system 41, the position and speed of the substrate stage 34 are controlled.

[0027] Further, on the side surface of the projection optical system PL in the + Y direction, an off-axis imaging type alignment sensor for detecting the position of the alignment mark (substrate mark) on the substrate P 39 The detection signal of the alignment sensor 39 is supplied to the alignment signal processing system 44. The alignment signal processing system 44 obtains the arrangement information of all shot areas on the substrate P by the EGA method, for example, based on the detection signal, and supplies it to the main control system 41. In this case, the reference position of the image via the projection optical system PL of the pattern of the reticle R in advance (error Information on the positional relationship (baseline amount, etc.) between the alignment mark 39 and the detection position of the alignment sensor 39 is measured and stored. Therefore, a reference mark member 36 on which reference marks 37A, 37B and the like are formed is fixed near the substrate P on the substrate stage 34.

[0028] In this example, since the detection results (measurement values) of the detectors 40A to 40H can be used in the exposure (superposition exposure) of the second layer and subsequent layers of the substrate P, the alignment sensor 39 is It is not always necessary to use it. However, in order to set the origin position of the measurement values of the detectors 40A to 40H, it is also possible to use the array coordinates of each shot area of the substrate P detected by the alignment sensor 39.

[0029] In addition, the exposure apparatus EX of this example supplies a liquid such as pure water to a local region (immersion region) between the lens at the tip of the projection optical system PL and the substrate P, and exposes the exposure light IL. It is preferable that the liquid immersion method is used in which the substrate P is exposed through the projection optical system PL and the liquid. For this purpose, for example, as disclosed in WO99 / 49504 pamphlet and WO2005 / 122221 pamphlet, a liquid supply device for supplying liquid to the immersion area, and its A liquid recovery apparatus that recovers the liquid in the immersion area may be provided.

[0030] During exposure, the illumination optical system 16 irradiates the illumination area 17R with the exposure light IL, and the pattern in the illumination area 17R of the reticle R is projected into one shot area SA on the substrate P via the projection optical system PL. With projection on the upper projection area 17P, the reticle stage 21 and the substrate stage 34 are driven, the reticle R and the substrate P are synchronously scanned in the Y direction, and the exposure of the exposure light IL is stopped. The operation of stepping the substrate P in the X and Y directions by driving the substrate stage 34 is repeated. As a result, the pattern image of the reticle R is exposed to each shot area on the substrate P by the step 'and' scan method.

[0031] Next, in the exposure apparatus EX of Fig. 1 in this example, the configuration of the scale pattern 56 of the reticle R and detectors 25A and 25B for detecting the position thereof, and each shot region on the substrate P The configuration of the formed scale pattern and detectors 40A to 40H for detecting the position thereof will be described in detail. Note that reticle R is used for exposure to the first layer of substrate P, and another reticle R1 is used for exposure of the second layer. FIG. 2 (A) shows the pattern arrangement of the reticle R. In FIG. 2 (A), the reticle pattern area 51 is surrounded by a frame-shaped shading band 53 and scanned. It is a rectangular area elongated in the direction SD (Y direction). For example, the pattern area 51 is divided into six subpattern areas 55A to 55F by one scribe line area 54A in the X direction and two scribe line areas 54B and 54C in the Y direction. For example, the same or different circuit patterns are formed in 55A to 55F. In the sub-pattern regions 55A to 55F, alignment marks that become substrate marks after being exposed on the substrate P are also formed as necessary. The scribe line areas 54A to 54C are areas to be used as cutting boundaries with a width of about 50 11 m when projected onto the substrate P. Of the light shielding bands 53, the scribe line areas 54A to 54C have substantially the same width as the scribe line area 54A. The inner region is also a region that serves as a cutting boundary when projected onto the substrate P. Note that since the image of the edge portion of the movable blind 13B in FIG. 1 is projected onto the shading band 53, the width thereof is somewhat larger than the scribe line region 54A.

[0033] Since the reticle R in this example is 6 pieces, the pattern area 51 has the force S divided by the three scribe line areas 54A to 54C, the number of divisions of the pattern area 51, and the arrangement of the sub-pattern areas. Is changed, the number and arrangement of the scribe line regions 54A to 54C are also changed. In this example, among the scribe line areas 54A to 54C, a two-dimensional scale pattern 56 is formed over the entire area in the central scribe line area 54A parallel to the scanning direction (Y direction).

[0034] As shown in an enlarged view in FIG. 2 (B), the scale pattern 56 has a substantially square light shielding pattern 57 as a background in the X direction (pitch) PX1 and a period in the Y direction PY1 with the light transmitting portion as the background. This is a grid pattern with periodicity in the X and Υ directions arranged in. The width of the light shielding pattern 57 in the X direction and the heel direction is usually a force S that is 1/2 of the period PX1 and PY1, for example, when indicating the origin position, the width of the light shielding pattern 57 at a specific position as described later. (Duty ratio) has changed (see Fig. 6 (A)). In FIG. 2 (B), the scale pattern 56 is similar to the line-and-space pattern in the Y direction with the period PY1 (hereinafter referred to as the L & S pattern) and the L & S pattern with the period PX1 in the X direction. It can be regarded as a superposition of. As an example, with the scale pattern 56 projected onto the substrate P, the period PY1 is 0.1. ~ 1 μm, period PX1 is about 0 · 1-2 m. Since the width of the projected image of the scribe line area 54A in the X direction is about 50 m, the scale pattern 56 can be formed in the X direction for about 50 cycles or more. By measuring one position in the Y direction of the scale pattern 56 and two positions in the X direction that are separated in the Y direction, the position of the reticle R (pattern area 51) in the X direction, the Y direction, And the rotation angle around Z axis can be measured.

[0035] As shown in FIG. 3 (A), a Y-axis scale pattern 59Y made of an L & S pattern having a predetermined period in the Y direction is formed in one light shielding band 53 parallel to the Y direction of the reticle R. A two-dimensional scale pattern 56 may be formed in the other light shielding band 53 parallel to the Y direction. As shown in FIG. 3B, the scale pattern 59Y is a pattern in which a large number of light shielding patterns 60Y (normal width is PY1 / 2) long in the X direction are arranged in the Y direction with a period PY1. Measure reticle R (pattern area 51) by measuring one Y-direction position of scale pattern 59Y in Fig. 3 (A) and one X-direction position and Y-direction position of scale pattern 56. Can measure the position in X and Y directions, and the rotation angle around the Z axis. The arrangement of the scale pattern in FIG. 3A can be used even when only one circuit pattern is formed in the entire pattern area 51 (there is no scribe line area 54A to 54C), for example. There is an advantage.

[0036] In addition, instead of the force scale pattern 56, which is a pattern in which the light shielding patterns 57 are arranged two-dimensionally, the scale pattern 56 is an L & S pattern with a period PY1 in the Y direction and an L & S pattern with a period PX1 in the X direction. A pattern in which and are arranged in parallel in the X direction may be used.

In this example, the reticle pattern image of FIG. 2A is exposed to each shot area SA of the first layer of the substrate P of FIG. Then, after pattern formation such as development and etching of the photoresist on the substrate P is performed, the substrate P coated with the photoresist is loaded on the substrate stage 34 in order to perform exposure on the second layer.

[0037] FIG. 4 (A) shows the substrate P on which the image of the pattern of the reticle R is transferred and the second layer is exposed. In FIG. 4 (A), the upper surface of the substrate P is X The reticle R scale pattern in Fig. 2 (A) is divided into a number of shot areas SA with a predetermined width in the direction and Y direction, and the center of each shot area SA crosses in the Y direction (scanning direction). Corresponding to the image of A scale pattern 56P on the substrate P side is formed.

[0038] As shown in FIG. 4 (B), each shot area SA of the substrate P has scribe lines 54AP to 54C P (corresponding to images of the scribe line areas 54A to 54C of the reticle R in FIG. 2 (A)). Are divided into six sub-shot areas 55AP to 55FP, and the same or different first layer circuit patterns are formed in the sub-shot areas 55AP to 55FP.

Fig. 4 (C) is an enlarged view showing the scale pattern 56P formed over the entire area of the scribe line 54AP parallel to the Y direction of the shot area SA in Fig. 4 (B). In this case, the scale pattern 56P is substantially square with the background of the substrate P as the background. For example, a convex (or concave) pattern 57P (represented as a convex pattern in FIG. 5A) is surrounded in the X direction. Phase (Pitch) PX2, A phase-type two-dimensional lattice pattern with periodicity in the X and Y directions arranged in the Y direction with a period of PY2. The periods PX2 and PY2 are values obtained by multiplying the periods PX1 and PY1 in FIG. 2B by the projection magnification / 3 of the projection optical system PL in FIG. In addition, the scale pattern 56P in Fig. 4 (C) has an approximate L & S pattern 58YP in the Y direction with a period PY2 (a pattern in which a large number of convex or concave line patterns 72Y are arranged in the Y direction) and a period PX2 This can be regarded as an overlay with the X-direction L & S pattern 58XP (a pattern in which a number of convex or concave line patterns 72X are arranged in the X direction).

In this example, the scale pattern 56P in FIG. 4C formed in each shot area SA of the substrate P is regarded as the scale portion of the encoder, and the position of the scale pattern 56P is detected. As a result, position information (movement amount and / or absolute position from a predetermined origin) of each shot area SA is measured. In other words, instead of the laser interferometers 38X and 38Y in FIG. 1, the position information of each shot area SA is measured using the scale pattern 56P. This causes fluctuations in the gas in the laser beam optical path of the laser interferometers 38X and 38Y, and even if the measured values of the laser interferometers 38X and 38Y fluctuate, the shot is not affected by the fluctuations. The position information of the area SA can be measured accurately. Therefore, high overlay accuracy can be maintained. The position of the scale pattern 56P in the X and Y directions is detected by the eight detectors 40A to 40H on the side of the substrate P in FIG.

FIG. 5 (A) is a perspective view showing a configuration example of the detector 40A. In FIG. 5 (A), the scale pattern 56P is enlarged in order to facilitate component force. Also, other detectors 40B ~ The configuration of the two detectors 25A and 25B on the 40H and reticle R side is the same as that of the detector 40A.

Yes

[0041] In the detector 40A of FIG. 5A, for example, a He—Ne laser (wavelength 633 nm) or a semiconductor laser that emits light from the visible region to the near infrared region (with a collimator lens installed at the exit end), etc. A laser beam in a wavelength region that is non-photosensitive to the photoresist PR on the substrate P emitted from the laser light source 61 is split into a laser beam LB1 and a second laser beam by the beam splitter 62A. This second laser beam is divided into a laser beam LB2 and a fourth laser beam by the beam splitter 62C, and this fourth laser beam is divided into two laser beams LB3 and LB4 by the beam splitter 62D. Then, the two laser beams LB1 and LB2 are incident on the scale pattern 56P on the substrate P while being inclined substantially symmetrically in the Y direction, and the + first-order diffracted light in the Y direction of the laser beam LB1 and the laser beam LB2 The interference light LBY with the first-order diffracted light in the Y direction enters the photoelectric detector 64Y such as a photodiode almost vertically from the scale pattern 56P.

[0042] Scale pattern 56P in Fig. 5 (A) was regarded as Y-direction L & S pattern 58YP (pattern in which line-shaped pattern 72Y was arranged in Y direction with period PY2) as shown in Fig. 5 (B). In this case, the detection signal S1Y of the photoelectric detector 64Y is a sine wave signal having a period PY2 (or period PY2 / 2) with respect to the position Y as shown in FIG.

Returning to Fig. 5 (A), the detection signal S1Y of the photoelectric detector 64Y passes through the amplifier 66, and then the high-pass filter (hereinafter referred to as HPF! //) circuit 67A and the low-pass filter (hereinafter referred to as LPF! //) circuit. 67 Input to B. The signal S3Y output from the HPF circuit 67A is supplied to the first input section of the counter 69. In addition, in the detector 40A of FIG. 5 (A), a pair of laser beams (not shown) irradiated to the scale pattern 56P at a position 90 degrees out of phase in the Y direction from the laser beams LB1 and LB2 forces. A detection signal S2Y whose phase is shifted by 90 ° with respect to the detection signal S1Y is generated from the interference light generated by this pair of laser beams by an unillustrated photoelectric detector, and this detection signal S2Y is generated by the HPF circuit 67C. To the second input of the counter 69.

[0043] Further, the signal S4Y output from the LPF circuit 67B is input to the origin signal generator 68, and the origin signal generator 68 resets the counter 69 when the signal S4Y reaches a peak, for example. A home signal is output, and the origin of the counter 69 is set accordingly. In the counter 69, the supplied two-phase detection signals S1Y and S2Y are interpolated in about 1000 divisions, and the movement amount in the soil Y direction of the scale pattern 56P relative to the detector 40A is, for example, a resolution of about 0.1 nm to lnm. Then, find the Y coordinate YA with the position where the reset signal is output as the origin. This Y coordinate YA is output to the coordinate measurement / interpolation system 45 in FIG.

In this case, in order to set the origin, as shown in FIG. 6 (A), the Y-direction L & S pattern 58YP (the Y component of the scale pattern 56P) has a central portion in the scanning direction. A set of linear patterns 72YA, 72YB, 72YC, 72YD is included which gradually widens and returns to the normal width again. At this time, also in the scale pattern 56 of the reticle R in FIG. 2B corresponding to the reticle R, there is a portion (origin portion) in the L & S pattern 58Y that returns to the normal width after the width of the light shielding pattern 57 gradually increases. .

[0045] The detection signal S1Y in Fig. 5 (A) corresponding to the L & S pattern 58YP in Fig. 6 (A), as shown in Fig. 6 (B) as an example, seems to be superimposed with a long-crested signal. become. When this signal is input to the HPF circuit 67A and LPF circuit 67B in FIG. 5 (A), the signal S3Y output from the HPF circuit 67A is as shown in FIG. 6 (C), as shown in FIG. The signal S4Y, which is the same sine wave signal as the detection signal S1Y and is output by the LPF circuit 67B, is a signal that becomes the apex at the position Y as shown in FIG. 6 (D). Therefore, the origin signal generator 68 in FIG.

0

Counter 69 is reset at position Y where Y is the vertex. As a result, the origin of counter 69

0

Settings are made. The LPF circuit 67B, HPF circuits 67A and 67C, origin signal generator 68, and counter 69 in Fig. 5 (A) constitute the Y-axis detection circuit 70Y, and the same configuration as the X-axis detection circuit 70X is also provided. ing. Note that the signal S3Y and the signal S4Y may be separated after the signal obtained by analog / digital conversion of the detection signal S1Y is Fourier-transformed with respect to the position Y.

In the detector 40A of FIG. 5 (A), the two laser beams LB3 and LB4 are incident on the scanore pattern 56P so as to be inclined substantially symmetrically in the X direction. Interference light between the first-order diffracted light and the first-order diffracted light in the X direction of the laser beam LB4 LBX force The light enters the photoelectric detector 64X almost vertically from the pattern 56P for S scale. As shown in Fig. 5 (B), the scale pattern 56P in Fig. 5 (A) is changed to the L & S pattern with period PX2 in the X direction As shown in FIG. 5 (C), the detection signal SIX of the photoelectric detector 64X becomes a sine wave signal with a period PX2 (or a period PX2 / 2) with respect to the position X. Detection signal S IX and detection signal S2X with phase shifted by 90 ° obtained from interference light not shown are output to detection circuit 70X. In detection circuit 70X, the amount of movement in the ± X direction of scale pattern 56P relative to detector 40A Is obtained as an X coordinate XA with a resolution of about 0.1 nm to 2 nm, for example, and this X coordinate XA is also supplied to the coordinate measurement / interpolation system 45 in FIG. The X coordinate XA is also a signal whose origin is, for example, a portion where the width of the pattern 57P gradually increases in the X direction and becomes the normal width again.

[0047] In FIG. 5A, a detector 40Α is configured including an optical system that irradiates the laser beam LB ;! to LB4 onto the substrate P, a Y-axis detection circuit 70Y, and an X-axis detection circuit 70Χ. ing. Further, in this example, each light shielding pattern 57 of the scale pattern 56 on the reticle R in FIG. 2B is formed of a material that reflects the laser beam of the laser light source 61 in FIG. . As a result, a detector having the same configuration as the detector 40 の in FIG. 5 (Α) can be used as the detectors 25 Α and 25 用 for the scale pattern 56 on the reticle R in FIG. 1.

[0048] In the linear encoder of FIG. 5 (A), since the origin pattern portion is provided in the scale pattern 56mm, it is not necessary to provide a track for the origin scale in addition to the scale pattern 56mm. The configuration of the optical system of the detector 40mm is simple. On the other hand, in order to generate the origin signal, an origin scale is provided separately from the scale pattern 56 mm, as shown in the configuration example of FIG. 7 where the same reference numerals are given to the portions corresponding to FIG. May be. In the configuration example of Fig. 7, the track adjacent to the scale pattern 56Ρ on the substrate Υ (the area where the scale pattern is formed along the Υ direction) is aperiodic to indicate the origin position in the Υ direction. An origin pattern 74 mm made of a convex pattern is formed.

Further, in the detector 40Α of FIG. 7, the beam splitter 62Β is disposed between the beam splitters 62Α and 62C. The second laser beam branched by the beam splitter 62Α is split into laser beams directed to the laser beam LB5 and the beam splitter 62C by the beam splitter 62Β. The laser beam LB5 branched by the beam splitter 62Β is reflected by the mirror 63C, and is irradiated almost perpendicularly to the track having the origin pattern 74Υ on the substrate Ρ. Scattered light from the substrate フォト through the photoresist PR LBS And the detection signal of the photoelectric detector 64S is input to the origin signal generator 71. The origin signal generator 71 is high when the input signal crosses a predetermined threshold level Sth. Generate the origin signal YAS to be level. This origin signal YSA is used to reset (or preset) the count value of the counter 69.

In the configuration example of FIG. 7, since it is not necessary to generate an origin signal from the detection signal S 1Y from the scale pattern 56P, the LPF circuit 67B and the origin signal generator 68 of FIG. It is not done. It is also possible to omit the HPF circuits 67A and 67C in FIG. 7 and input the detection signals S 1 Y and S2Y directly to the counter 69.

[0051] FIG. 8 (A) shows a track 73 adjacent to the track 73YA in which the Y-axis L & S pattern 58YP (the Y component of the scale pattern 56P) is formed in the shot area SA of the substrate P. The state where the origin pattern 74Y is formed on YB is shown. In this case, also in the scribe line area 54A on the reticle R in FIG. 2 (B), the portion corresponding to the origin pattern 74Y is a light shielding pattern so as to be adjacent to the L & S pattern 58Y in the X direction. A scale pattern is formed. The origin coordinate 74Y can be used as the origin of the substrate P when the laser beam LB5 irradiation area of the detector 40A in FIG.

Yes

The configuration example of FIG. 7 includes an optical system that irradiates the substrate P with the laser beam LB;! To LB5, a Y-axis detection circuit 70Y, an X-axis detection circuit 70 検出, and an origin signal generator 71. Detector 4 OA is configured.

Note that the absolute pattern in the Y direction is rough! / And resolution (for example, about 0.1 mm) over the entire area in the Y direction of the scale pattern 56P of the shot area SA on the substrate P in FIG. 4 (B). A non-periodic scale pattern may be provided that can be measured with.

FIG. 8 (B) shows a series of bar code 75A, 75B,..., Scale patterns provided on the track 73YB adjacent to the track 73YA on which the Y-axis L & S pattern 58YP is formed. In this case, for example, the detection signal (scattered light) obtained from the photoelectric detector 64S by irradiation with the laser beam LB5 in FIG. 7 changes in a nose shape at the rising and falling portions of the uneven pattern, so that an origin signal is generated. The origin signal YAS output from the section 71 is a signal representing the edge of the uneven pattern such as the barcode 75A in FIG. 8B. There Thus, the absolute position in the Y direction can be roughly measured by setting patterns such as barcodes 75A and 75B so that the edge pattern does not overlap.

[0053] As another method of determining the origin, the substrate stage 34 in FIG. 1 is moved to the substrate loading position or the bridging alignment position, and the substrate P is used by using an alignment sensor (or alignment sensor 39) (not shown). By measuring the position of the predetermined alignment mark (substrate mark) above, the position of the substrate P is measured with an accuracy within one cycle such as the scale pattern 56P formed in each shot area on the substrate P. It is also possible. This means that the follow-up accuracy of the substrate P due to the bri alignment is within one cycle of the scale pattern 56P and the like. If the position of the shot area on the substrate P is driven within one cycle such as the scale pattern 56P due to bria alignment, the absolute position within that cycle can be obtained by reading the scale pattern 56P as described above. I can grasp it.

As the scale pattern detectors 25A and 25B and the detectors 40A to 40H, in addition to the method of detecting interference light or scattered light as shown in FIG. Etc. can also be used. Also, the scale pattern provided on each shot area of the substrate P in accordance with the use of a different array such as FIG. 2 (A) or FIG. 3 (A) as the array of scale patterns on the reticle R. The position also changes. Therefore, the scale pattern detectors 25A and 25B and the detectors 40A to 40H are attached to, for example, a slide mechanism (not shown), and the slide mechanism detects the scale according to the position of the scale pattern to be detected. The positions of 25A and 25B and detectors 40A to 40H may be adjusted.

[0055] Next, in order to explain an example of the arrangement of the eight detectors 40A to 40H on the substrate P-side scale pattern in FIG. 1, as shown in FIG. Assume that the projection area 17P is located on a certain shot area SA6. At this time, the detectors 40A and 40B cause the detection areas 40AD and 40BD (the laser beam LB in FIG. 5A; the area irradiated with! To LB5) to the shot area SA6 in the + Y direction and the Y direction, respectively. The detectors 40C and 40D are arranged so that the position of the scale pattern 56P in the adjacent shot areas SA7 and SA2 can be measured, and the detectors 40C and 40D are respectively adjacent to the shot area SA6—the shot area SA8 and the X direction To measure the position of scale pattern 56P in SA9 Placed in. The detector 40H is arranged so that the position of the scale pattern 56P in the shot area SA1 adjacent to the shot area SA2 in the −Y direction can be measured by the detection area 40HD, and the detectors 40F and 40G are respectively shot. It is arranged so that the position of the scale pattern 56P in the shot areas SA4 and SA5 adjacent to the area SA1 in the X and + X directions can be measured, and the detector 40E is adjacent to the shot area SA1 in the Y direction. Arranged so that the position of scale pattern 56P in area SA3 can be measured.

In other words, the pair of detectors 40A and 40B can measure the position of the scale pattern in the shot areas SA7 and SA2 that sandwich the shot area SA6 where the projection area 17P is located in the scanning direction. The pair of detectors 40C and 40D are arranged so that the position of the scale pattern in the shot areas SA8 and SA9 that sandwich the shot area SA6 in the non-scanning direction can be measured. These first detectors 40A to 40D are used to obtain position information of the shot area SA6 to be exposed by interpolation when the shot area SA6 on the substrate P is exposed in the projection area 17P. . That is, in this example, taking into account that liquid by immersion may be supplied to the projection area 17P during exposure, the position of the scale pattern is measured in the shot area SA6 where the projection area 17P is located. not going. In this example, since the scale pattern 56P is a two-dimensional pattern, in order to measure the position information (X direction, Y direction position, and rotation angle) of the shot area SA6, two detectors ( For example, only detectors 40A and 40B) may be used!

[0057] In this case, in order to obtain the position information of the shot area SA6 to be exposed more accurately, the relative positional relationship between the shot area SA6 and the surrounding shot areas may be measured in advance before exposure. . For this purpose, a pair of detectors 40B and 40E (the detector 40B is shared with the first set) has shot areas SA2 and SA3 sandwiching the shot area SA1 where the detection area 40HD of the detector 40H is located in the scanning direction. The pair of detectors 40F and 40G can measure the position of the scale pattern in the shot areas SA4 and SA5 that sandwich the shot area SA1 in the non-scanning direction. Is arranged. These second set of five detectors 40B and 40E to 40H preliminarily expose the relative positions of the shot area to be exposed (here, the shot area SA1) and the surrounding shot areas SA2 to SA5. Used to measure the positional relationship. In this case, the detector shared by the first group and the second group may be any of the detectors 40A to 40D. In addition, since the scale pattern 56P is a two-dimensional pattern, three detectors (for example, the detector 40H and the detector 40H) are used to measure in advance the relative positional relationship between the shot area SA1 and the surrounding shot areas. Only devices 40B, 40G) may be used. As a result, the total number of detectors used can be reduced to four (for example, detectors 40B, 40D, 40H, and 40G).

Next, in the exposure apparatus EX of FIG. 1, an example of the operation in the case of exposing the pattern image of the reticle R1 on each shot area SA of the second layer of the substrate P will be described. The following operations are controlled by the main control system 41 in FIG.

First, in FIG. 4A, assuming that the shot area SA1 on the substrate P is an exposure target, the stage drive system 43 that does not irradiate the exposure light IL drives the substrate stage 34 in the exposure apparatus EX of FIG. Thus, the entire area of the scale pattern 56P in the shot areas SA2, SA3, SA4, SA1 and SA5 on the substrate P is detected with respect to the detection areas of the second set of five detectors 40B and 40E to 40H. Move in the Y direction, read the X and Y coordinates of the corresponding scale pattern 56P at the specified sampling rate using the detectors 40B and 40E to 40H, and sequentially read the measured values. Supply to system 45. The read coordinates are also supplied to the stage drive system 43.

[0059] The operation of reading the coordinates of the scale pattern 56P on the substrate P by the detectors 40B, 40E to 40H is performed, for example, by using a plurality of predetermined shot areas on the substrate P using the alignment sensor 39 of FIG. When measuring the position of the alignment mark, it may be executed together. In addition, on the substrate P in FIG. 4A, for example, exposure is started from a plurality of shot areas arranged in a row in the X direction on the + Y direction side, and then gradually exposed in the yacht area on the Y direction side. , During scanning exposure of a shot area of a certain row, the detection signal power of the detectors 40B and 40E to 40H, and the scale pattern 56P of the shot area of the two rows ahead are detected. You may make it read a coordinate. Similarly, in the case where the exposure of the shot area in the + Y direction column gradually shifts from the exposure of the shot area in the Y direction side row of the substrate P to + Y of the detector 40A in FIG. 4 (A). It is possible to arrange 4 detectors (detectors arranged symmetrically with detectors 40E to 40H) on the direction side. [0060] In the case of Fig. 4 (A), in the center detector 40H, a series of X and Y coordinates (XHi, YHi) (i = l, 2, · · ·) of the scale pattern 56P in the shot area SA1. · Detectors 40B and 40E that sandwich) in the Y direction read the X coordinate (XBi and XEi) of scale pattern 56P in shot areas SA2 and SA3, and detect shot area SA1 in the X direction. The instruments 40F and 40G read the Y coordinates (YFi and YGi) of the scale pattern 56P in the shot areas SA4 and SA5. In this case, the origin position of the scale pattern 56P in the entire shot area SA of this example is relatively the same position in the shot (such as Y in Fig. 6 (D)).

Therefore, when driving the substrate stage 34, the stage drive system 43, as an example, sets the substrate stage so that the Y coordinates (YFi and YGi) of the scale pattern in the shot areas SA4 and SA5 have the same value. Controls the rotation angle around the 34 Z axis.

[0061] Next, the coordinate measurement / interpolation system 45 processes the X coordinate and Y coordinate of the supplied five scale patterns, and calculates the average value of the Y coordinates of the shot areas SA4 and SA5 (= (YFi + YGi ) / 2) A series of differences between the Y coordinate YHi in the shot area SA1 (here, equal to YFi) and the average X coordinate (= (XBi + XEi) / 2) and shot in the shot areas SA2 and SA3 A series of differences Δ の with respect to the X coordinate XHi of the area SA1 is obtained, and these differences Δ Χί, ΔΥΪ are stored in the storage device 46 in association with the shot area SA1 (prefetching step). Similarly, a series of measured differences (Δ ¾, Δ Yi) (i = l, 2,...) Are also stored in the storage device 46 for several other sailboat areas (prefetched shot areas). Remember me.

Next, when the reticle R1 is loaded on the reticle stage 21 of FIG. 1 and a pattern image of the reticle R1 is exposed to the shot area SA1 on the substrate P as shown in FIG. In synchronization with the movement of the shot area SA1 in the + Y direction with respect to the projection area 17P irradiated with the exposure light IL through the projection optical system PL by driving the substrate stage 34, the reticle stage 21 in FIG. To move reticle R1 in the corresponding direction (for example, -Y direction). At this time, as shown in FIG. 9, in the detectors 40A and 40B that sandwich the projection region 17P in the Y direction, the X coordinates (XAi and XBi) (i = l, 2) of the pattern for scale in the shot regions SA2 and SA3 The detectors 40C and 40D that sandwich them in the X direction read the Y coordinate (YCi and YDi) of the scale pattern in the shot areas SA4 and SA5, and perform coordinate measurement and interpolation 45 To supply. Also in this case, the stage drive system 43 is used as an example of a shot. The rotation angle around the Z axis of the substrate stage 34 is controlled so that the Y coordinates (YCi and YDi) of the scale pattern in the areas SA4 and SA5 have the same value.

[0063] Next, the coordinate measurement / interpolation system 45 interpolates the coordinate values of the supplied four scale patterns, and sequentially, the X and Y coordinates of the scale pattern in the shot area SA1 being exposed. Find (XPi, YPi). Specifically, the series of differences (Δ Χ i, Δ Υί) stored in the storage device 46 and the average value of the X coordinates of the scale patterns in the shot areas SA2 and SA3 ΧΑΒ i (= (XAi + XBi) / 2) and the average Y-coordinate value YCDi (= (YCi + YDi) / 2) of the scale pattern in the shot areas SA4 and SA5, the coordinate measurement 'interpolation system 45 uses the shot area as follows: The SA1 coordinates (XPi, YPi) (i = l, 2, ···) are calculated, and the calculation results are sequentially supplied to the stage drive system 43.

[0064] XPi = XABi + Δ Χί ••• (1Α)

YPi = YCDi + Δ Υί---(1B)

In the stage drive system 43, the substrate stage 34 is adjusted so that the X coordinate XPi of the shot area SA1 becomes a substantially constant value and the Y coordinate YPi changes at a constant speed so that an appropriate exposure amount can be obtained on the substrate P. To drive. In synchronization with this, the stage drive system 43 calculates the coordinates (XRi, YRi) of the reticle R1 (reticle stage 21) corresponding to the coordinates (XPi, YPi) of the shot area SA1. As an example, if the origin is set at the center of the shot area SA1, the coordinates (XRi, YRi) of the reticle R1 are multiplied by the reciprocal of the projection magnification (1 // 3) to the coordinates (XPi, YPi). The power you can find with S Then, the stage drive system 43 drives the reticle stage 21 based on the measurement values of the laser interferometers 23X and 23Y so that the coordinates of the reticle R1 become (XRi, YRi) (actual scanning exposure process). As a result, the reticle R1 on the shot area SA1 on the substrate P is not affected by fluctuations in the measurement values of the laser interferometers 38X and 38Y on the substrate stage 34 side (due to gas fluctuations in the optical path). Pattern images can be overlaid with high accuracy.

[0065] In the actual scanning exposure process, the above-described pre-reading process may be executed in parallel. For example, in FIG. 9, when an image of the pattern of reticle R1 is exposed to shot area SA1 on substrate P, one shot area is separated from shot area SA1 on substrate P in the Y direction. In shot area SA10, using detectors 40B, 40E to 40H, This means measuring the relative positional relationship between the shot area SA10 and the four surrounding shot areas. This can improve the throughput of the exposure process for substrate P.

[0066] Further, in this example, when the circuit pattern of the first layer formed in the shot area SA on the substrate P expands and contracts in the Y direction, as shown in FIG. The Y-axis L & S pattern 58YP corresponding to the Y component of the scale pattern 56P is also displaced from the position indicated by the dotted line to the L & S pattern 77Y indicated by the solid line when there is no expansion / contraction. At this time, in this example, the position of the reticle R1 in FIG. 1 in the Y direction is controlled based on the shifted L & S pattern 77Y. Therefore, the pattern image of the reticle R1 expands and contracts according to the expansion and contraction of the shifted L & S pattern 77Y. Exposed. Therefore, extremely high overlay accuracy can be obtained.

[0067] When the pattern 56 for scale 56 is also formed in the pattern region 51 of the reticle R1, as shown in FIG. 2A, in the actual scanning exposure process described above, FIG. The X and Y coordinates of the scale pattern 56 of the reticle R1 may be measured using the detectors 25A and 25B, and the reticle stage 21 may be driven based on the measured values. In this case, the overlay accuracy can be improved because there is no influence of fluctuations in the measured values of the laser interferometers 23X and 23Y caused by gas fluctuations in the optical path of the laser interferometers 23X and 23Y on the reticle side. .

In addition, in FIG. 9, when the exposure is performed on the shot area SA11 at the outer edge of the substrate P, as it is, in the pre-reading process, as shown in FIG. Detectors 40B, 40E to 40H cannot be placed in the four shot areas that surround the shot area SA11. In such a case, as shown in FIG. 9, the scale pattern 76A and the scale pattern 56A similar to the scale pattern 56P in FIG. 76B may be formed. As a result, even in the shot area S Al 1! /, It is possible to actually perform the above-described pre-reading process and the actual scanning exposure process using this measurement result.

[0069] During scanning exposure, a predetermined run-up distance may be required to accelerate the reticle stage 21 and the substrate stage 34 of Fig. 1 to the target speed. like this In this case, for example, when scanning exposure of the shot area SA1 on the substrate P in FIG. 9 with the projection area 17P, until the projection area 17P enters the shot area SA1 and irradiation of the exposure light IL is started, the detector 40A to 40D may detect the scale pattern in the shot area adjacent in the Y direction with respect to the shot areas SA2 to SA5, and drive the substrate stage 34 and the reticle stage 21 based on the detection result! . At this time, as an example, the offset of the position of the scale pattern (offset within one cycle) between the shot area in the run-up section and the shot areas SA2 to SA5 is obtained in advance, and the offset is calculated in the run-up section. By adding this value, the effect of misalignment when switching from running to exposure can be reduced.

[0070] Next, operational effects and the like of the above-described embodiment of the present invention will be described.

(A1) According to the above-described exposure apparatus EX in FIG. 1, in order to expose the shot area SA1 on the substrate P in FIG. 9 via the projection optical system PL, when the exposure light IL is irradiated to the shot area SA1 In addition, the laser beam is irradiated from the detectors 40A to 40D without passing through the projection optical system PL into the measurement target area consisting of the shot areas SA2 to SA5 on the substrate P whose positional relationship with the shot area SA1 is known. The position information of the shot areas SA2 to SA5 is measured, and the position information of the shot area SA1 is measured from the measurement results. Based on the measurement results, the substrate stage 34, the coordinate measurement / interpolation system 45, and the stage are measured. The drive system 43 controls the relative positional relationship between the projection area 17P of the exposure light IL and the shot area SA1.

Therefore, compared with the case where the substrate stage 34 is driven based only on the measurement values of the laser interferometers 38X and 38Y, the pattern image of the reticle R1 can be exposed with high accuracy on the shot area SA1. In addition, a liquid is interposed between the projection optical system PL and the substrate P in order to measure position information by irradiating the measurement target region with a laser beam without passing through the projection optical system PL. The exposure method can also be applied when exposure is performed by a liquid immersion method.

[0072] In the above-described embodiment, the force for measuring the position of the scale pattern 56P in the shot area SA. In addition, the actual circuit pattern or the like formed in the shot area SA is used for the shot. The position of the area SA may be measured.

(A2) Since the wavelength of the exposure light IL and the laser beam irradiated to the scale pattern 56P on the substrate P from the detector 40A in FIG. 5 (A) is different, the photoresist PR on the substrate P is used as the laser beam. It is possible to use light having a wavelength range that does not expose the light. (A3) Further, in the above embodiment, when the shot area SA1 on the substrate P in FIG. 9 is exposed with the exposure light IL, the mechanism including the substrate stage 34 and the stage drive system 43 is relatively moved. As a result, the substrate P and the projection region 17P are moved relative to each other in the scanning direction (Y direction) while a part of the shot region SA1 is exposed to the projection region 17P (exposure light IU), and measurement on the substrate P is performed. The target shot areas SA2 to SA5 are irradiated with laser beams from the detectors 40A to 40D, and the positional information of the shot area SA1 is continuously measured. Based on the measurement results, the projection area 17P and the shot area SA1 are Therefore, the overlay accuracy can be improved when performing exposure by the scanning exposure method.

[0074] (A4) Further, in order to represent the relative movement amount between the shot area SA1 and the projection area 17P, the scale pattern 56P formed in the shot areas SA2 to SA5 to be measured is used, and the laser is used for this. Position detection is performed by irradiating a beam. Therefore, the relative movement amount can be measured with high accuracy.

(A5) Scale pattern 56P force As shown in Fig. 4 (C), the convex or concave pattern 57P (first pattern part) and the characteristics (height, ie, phase) for the laser beam are When the base portion (second pattern portion) different from the pattern 57P includes a pattern alternately arranged in the X direction and the Y direction, the position of the scale pattern 56P can be easily detected by the detector 40A. The different characteristic may be, for example, the reflectance with respect to the laser beam.

[0075] (A6) In addition, when the scale pattern 56P force includes the Y-axis L & S pattern 58YP formed periodically in the scanning direction, the L & S pattern 58Y P as shown in FIG. By irradiating a laser beam from the detector 40A to the detector 40A, a detection signal S1Y that periodically changes as the laser beam and the shot area to be measured move relative to each other in the scanning direction is detected. Can do.

[0076] (A7) Also, as shown in Fig. 6 (A), the scanning direction of the first pattern part (72YA to 72YD) and the second pattern part (background) is part of the Y-axis L & S pattern 58YP. When there is a part (reference part) whose length ratio is different from the other parts, the detection signal is detected as the laser beam and the measurement target shiyota area move relative to each other in the scanning direction. By separating the non-periodic signal S4Y from S1Y to identify the reference part, the reference part is accommodated. Easy to identify. This makes it possible to measure the absolute position of the position where the laser beam of the L & S pattern 58YP with respect to the reference portion is irradiated in the shot area to be measured.

[0077] (A8) As shown in Fig. 5 (A), the scale pattern 56P force is periodically formed in the direction intersecting the scanning direction (vertical non-scanning direction in Fig. 5 (A)). If the L & S pattern 58XP is included, the L & S pattern 58XP is irradiated with a laser beam, so that the laser beam and the shot area to be measured move relatively in the scanning direction. A periodic detection signal SIX corresponding to the relative displacement in the non-scanning direction with the shot area to be measured can be detected. As a result, the position in the non-scanning direction of the shot area (scale pattern 56P) to be measured can be accurately measured.

(A9) As a scale pattern, as shown in FIG. 8, apart from the periodic Y-axis L & S pattern 58YP, a non-periodic origin pattern 74 Y in the scanning direction for origin signal detection When the origin pattern 74Y is irradiated with a laser beam, the laser beam and the shot area to be measured have a specific positional relationship in the scanning direction (here, the edge of the origin pattern 74Y It is possible to detect a state in which the laser beam is irradiated on the part. This makes it possible to measure the absolute position within the shot area to be measured.

[0079] (A10) Further, as shown in FIG. 9, the shot area force to be measured is shot area S during exposure.

When the shot areas SA2 to SA5 adjacent to A1 are included, the position of the shot area SA1 during the exposure can be measured with high accuracy by interpolation or the like.

(All) Further, when the shot area force to be measured includes shot areas SA4 and SA5 adjacent in the non-scanning direction to the shot area SA1 being exposed, the position in the scanning direction can be measured with high accuracy.

[0080] (A12) In addition, the shot area force of the measurement target includes shot areas SA2 and SA3 that are adjacent to the shot area SA1 in the exposure direction, particularly in the non-scan direction. It can be measured.

(A13) As shown in FIG. 9, during the exposure, the shot areas SA2 to S2 to be measured are exposed.

If A5 does not include the shot area SA1 to be exposed, the shot area SA1 Before the irradiation of the exposure light IL is started, as shown in FIG. 4 (A), the shot areas SA2 to SA5 to be measured and the shot area SA1 to be exposed are irradiated with a laser beam in advance. Thus, it is preferable to detect positional relationship information between the shot areas SA2 to SA5 to be measured and the shot area SA1 to be exposed. As a result, when the shot area SA1 is actually exposed, the position of the shot area SA1 can be interpolated with high accuracy from the position information of the surrounding shot areas SA2 to SA5 to be measured.

[0081] (A14) When the shot area SA1 is exposed as shown in FIG. 9 based on the measurement result of the position information of the shot area SA1 to be exposed in FIG. 4 (A), the projection optical system PL By controlling the relative positional relationship between the projection area 17P and the shot area SA1 in the direction intersecting the optical axis (vertical X direction and Y direction in FIG. 9), the overlay accuracy can be improved.

(A15) In the exposure apparatus EX of FIG. 1, when the pattern of the reticle R1 is exposed to the shot area SA on the substrate P via the projection optical system PL by the scanning exposure method, the reticle of FIG. The scale pattern 56 formed on R1 is irradiated with a laser beam to measure the position information of reticle R1, and based on the measurement results of the position information of reticle R1 and shot area SA, reticle R1 In the case of controlling the relative positional relationship between the substrate P and the substrate P, the influence of fluctuations in the measurement values of the laser interferometers 23X and 23Y on the reticle stage 21 side can be suppressed.

Next, another example of the embodiment of the present invention will be described with reference to FIG. In the embodiment shown in FIG. 1, as shown in FIG. 4 (A), a detector for detecting the position of the scale pattern 56P in the shot area SA6 where the projection area 17P is located is not provided. In order to measure the relative positional relationship between the shot area SA6 and the surrounding shot areas, it was necessary to provide a plurality of detectors 40A to 40H. Therefore, in this example, the position of the scale pattern in the shot area under exposure where the projection area 17P is located is directly measured without using the projection optical system PL.

FIG. 11 is a perspective view showing the vicinity of the projection area 17P by the projection optical system PL of the exposure apparatus of this example. In FIG. 11, projection is performed on the projection area 17P on the shot area SA on the substrate P. The exposure light IL is irradiated through the shadow optical system PL, the substrate P moves in the + Y direction, for example, and the reticle pattern image is exposed on the yacht area SA. The center of the shot area SA A scale pattern 56P is formed on the scribe line along the Y direction of the part, and a measurement laser beam is incident obliquely between the lower end of the projection optical system PL and the substrate 、, and the scale pattern 56P A detector 78 for reading the positions in the X and Y directions is arranged.

In the detector 78 in FIG. 11 where the same reference numerals are given to the parts corresponding to FIG. 5 (A), the laser beam force emitted from the laser light source 61 is converted into the laser beam LB1 and the second laser beam by the beam splitter 62A. This second laser beam is split into a laser beam LB2 and a fourth laser beam by the beam splitter 62C. Then, after the fourth laser beam is reflected by the mirror 63A, it is divided into two laser beams LB3 and LB4 by the beam splitter 62D, and the laser beam LB4 is reflected by the mirror 63B. Then, the two laser beams LB1 and LB2 are incident on the scale pattern 56P on the substrate P while being largely inclined around an axis parallel to the Y axis and substantially symmetrically in the Y direction. Then, the interference light LBY between the + first-order diffracted light of the laser beam LB1 and the first-order folded light of the laser beam LB2 enters the photoelectric detector 64Y. By inputting the detection signal of the photoelectric detector 64Y to a detection circuit similar to the Y-axis detection circuit 70Y in FIG. 5A, the position in the Y direction of the scale pattern 56P can be measured.

[0085] Further, the two laser beams LB3 and LB4 are inclined substantially symmetrically in the X direction in a state of being largely inclined clockwise around an axis parallel to the X axis with respect to the scale pattern 56P. Incident light LBX between the + 1st order diffracted light of the laser beam LB3 and the 1st order diffracted light of the laser beam LB4 enters the photoelectric detector 64X. By inputting the detection signal of the photoelectric detector 64X to a detection circuit similar to the X-axis detection circuit 70X in FIG. 5A, the position in the X direction of the scale pattern 56P can be measured. Other configurations are the same as those of the embodiment of FIG.

[0086] According to this example, since the position of the scale pattern 56P in the shot area SA being exposed can be directly measured, direct scanning exposure can be performed without performing the pre-read process, and the throughput of the exposure process Can be improved.

According to the embodiment of FIG. 11, the shot area SA itself under exposure is set as the measurement target area, and the shot area SA is irradiated with the laser beam from the detector 78 without passing through the projection optical system PL. Then, the position information of the shot area SA is measured. Based on the measurement result, the projection area 17P of the exposure light IL is obtained by the substrate stage 34, the coordinate measurement / interpolation system 45, and the stage drive system 43 in FIG. And the relative positional relationship between the shot area SA and the shot area SA can be controlled. Therefore, the overlay accuracy can be improved, and the present invention can be applied to the case where exposure is performed by a liquid immersion method. Even when exposure is performed by the liquid immersion method, an optical autofocus sensor using the oblique incidence method can be used, and thus the detector 78 can also be used.

Next, still another example of the embodiment of the present invention will be described with reference to FIG. In the embodiment of FIG. 4A described above, in order to pre-read the position of the scale pattern 56P in the shot area SA6 where the projection area 17P is located, it is adjacent to the projection area 17P in the scanning direction (Y direction). The detectors 40E to 40H are provided in the direction to be operated. On the other hand, in the embodiment shown in FIG. 12, the non-scanning direction X direction is adjacent to the shot area SA6 in which the projection area 17P is located, and the scan lines in the shot areas SA10, SA11, SA12, and SA13 are aligned. Detectors 40Η, 40G, 40Ε, and 40F are installed to read the pattern 56 用. Further, a detector 401 for reading the scale pattern 56Ρ in the shot regions SA14, SA15, SA16, SA17 in a direction adjacent to the + ショット direction in the non-scanning direction with respect to the shot region SA6 where the projection region 17P is located 401 , 40J, 40Κ, 40L are installed. The configuration of the detectors 40I to 40L is the same as that of the detector 40A.

In this case, in general, during scanning exposure, the projection area 17P on the substrate P shifts to a shot area adjacent in the non-scanning direction every time scanning exposure of one shot area SA is completed. Actually, the substrate P side moves relative to the projection region 17P. Therefore, when the projection region 17P gradually shifts to the shot region in the X direction with respect to the substrate P as shown by the locus TPL in FIG. 12, the five detectors 40C, 40E to 40X on the X direction side with respect to the projection region 17P By using the detection result of 4 OH, it is possible to prefetch the relative positional relationship between the shot area exposed by the projection area 17P and the shot area surrounding it. On the other hand, when the projection area 17P gradually shifts to the shot area in the + X direction with respect to the substrate P, the detection results of the five detectors 40D and 40I to 40L on the + X direction side with respect to the projection area 17P are displayed. By using it, it is possible to prefetch the relative positional relationship between the shot area exposed by the projection area 17P and the shot area surrounding the shot area. Therefore, look ahead When the actual exposure is performed using the determined positional relationship, the position detection result of the four detectors 40A to 40D surrounding the projection area 17P is used to determine the exposure pattern in the projection area 17P and the shot area to be exposed. Superposition can be performed with high accuracy.

As described above, by using the prefetch detectors 40E to 40H and 40I to 40L having the arrangement shown in FIG. 12, the positional relationship between the shot area to be exposed at the same time and the surrounding shot areas at the time of scanning exposure can be obtained. Prefetching is possible, and the throughput of the exposure process is kept high. Since the detectors 40E to 40L can detect the positions in the X direction and the Y direction, respectively, the detectors 40E and 40G and the detectors 40J and 40K can be omitted in the arrangement of FIG.

Note that the exposure apparatus of the above embodiment includes an illumination optical system composed of a plurality of lenses, a projection optical system incorporated in the exposure apparatus main body, and optical adjustment, and a reticle stage made up of a large number of mechanical parts. It can be manufactured by attaching a substrate stage to the main body of the exposure apparatus, connecting wiring and piping, and making overall adjustments (electrical adjustment, operation check, etc.). It is desirable to manufacture the exposure apparatus in a clean room where the temperature and cleanliness are controlled.

Note that the present invention can be similarly applied not only to exposure with a scanning exposure type projection exposure apparatus but also with a batch exposure type projection exposure apparatus.

In the above-described embodiment, a force using a light-transmitting reticle in which a predetermined light-shielding pattern (or phase pattern / dimming pattern) is formed on a light-transmitting substrate. Instead of this reticle, For example, as disclosed in US Pat. No. 6,778,257, an electronic mask that forms a transmission pattern, a reflection pattern, or a light emission pattern based on electronic data of a pattern to be exposed is used. Motole.

In the above-described embodiment, the power for exposing the substrate by projecting the pattern image onto the substrate P using the projection optical system PL is disclosed in International Publication No. WO 2001/035168. As described above, by forming the interference fringes on the substrate P, it is possible to apply the present invention to an exposure apparatus (lithography system) that exposes a line “and” space on the substrate P. In this case, a diffraction grating for forming interference fringes that do not require the use of the projection optical system PL can be regarded as an optical system. [0093] When a semiconductor device is manufactured using the exposure apparatus of the above-described embodiment, the semiconductor device has a function function / performance design step, a reticle manufacturing step based on this step, a silicon material, The step of forming a wafer from the substrate, the step of exposing the reticle pattern onto the substrate (wafer) by the exposure apparatus of the above embodiment, the step of developing the exposed substrate, the heating (curing) of the developed substrate, the etching step, etc. It is manufactured through a substrate processing step, a device assembly step (including a dicing process, a bonding process, and a packaging process) and an inspection step.

Further, the present invention is not limited to application to a semiconductor device manufacturing process. For example, a liquid crystal display element formed on a square glass plate or the like, or a display device such as a plasma display is manufactured. Also used in the manufacturing process of various devices such as processes, imaging devices (CCD, etc.), micromachines, MEMS (Microelectromechanical Systems), ceramic wafers, etc. as substrates, and DNA chips Widely applicable. Furthermore, the present invention can also be applied to a manufacturing process when manufacturing a mask (photomask, reticle, etc.) in which a mask pattern of various devices is formed using a photolithographic process.

[0095] It should be noted that the present invention is not limited to the above-described embodiment, and can take various configurations without departing from the gist of the present invention. In addition, the entire disclosure of Japanese Patent Application No. 2006-331653 filed on December 8, 2006, including the description, claims, drawings, and abstract, is incorporated herein by reference in its entirety. It has been incorporated.

Claims

The scope of the claims

[1] An exposure method in which exposure light is irradiated onto a predetermined area on an object via an optical system to expose the predetermined area,

When irradiating the predetermined area with the exposure light, the predetermined area on the object or a measurement area consisting of an area on the object whose positional relationship is known is not passed through the optical system. The measurement light is irradiated to measure the position information of the predetermined area, and the relative positional relationship between the exposure light and the predetermined area is controlled based on the measurement result of the position information. Exposure method.

[2] The exposure method according to [1], wherein the exposure light and the measurement light have different wavelengths.

[3] When exposing the predetermined area on the object with the exposure light, the object and the exposure light are phased in a predetermined direction in a state in which the exposure light is irradiated on a part of the predetermined area. While moving against,

Irradiating the measurement light into the measurement area without passing through the optical system, continuously measuring position information of the predetermined area, and based on the measurement result of the position information, the exposure light and the 3. The g | light method according to claim 2, wherein a relative positional relationship with a predetermined region is controlled.

[4] The measurement light is irradiated to a measurement pattern formed in the measurement area in order to represent a relative movement amount between the predetermined area on the object and the exposure light. The exposure method according to claim 3.

[5] The measurement pattern includes a pattern in which first pattern portions and second pattern portions whose characteristics with respect to the measurement light are different from the first pattern portions are alternately arranged. Item 5. The exposure method according to Item 4.

[6] The measurement pattern includes line-and-space patterns that are different in height or reflectivity between the first pattern portion and the second pattern portion and are periodically formed in the predetermined direction. ,

By irradiating the measurement light to the line 'and' space pattern, the measurement light and the measurement target region change periodically according to relative movement in the predetermined direction. 6. The exposure method according to claim 5, wherein a measurement signal is detected.

[7] A part of the line 'and' space pattern includes a reference portion in which a ratio of lengths in the predetermined direction between the first pattern portion and the second pattern portion is different from other portions, The non-periodic signal for identifying the reference portion is separated from the measurement signal in accordance with the relative movement of the measurement light and the measurement region in the predetermined direction. 6. The exposure method according to 6.

[8] The measurement pattern includes a periodic pattern periodically formed in a direction intersecting the predetermined direction,

By irradiating the periodic pattern with the measurement light, when the measurement light and the measurement area are relatively moved in the predetermined direction, the measurement light and the measurement area are moved in the predetermined direction. 5. The exposure method according to claim 4, wherein a periodic signal corresponding to a relative displacement in an orthogonal direction is detected.

[9] The measurement pattern includes an aperiodic pattern in the predetermined direction,

5. The state in which the measurement light and the measurement target region are in a specific positional relationship in the predetermined direction is detected by irradiating the measurement light onto the non-periodic pattern. An exposure method according to 1.

[10] A plurality of partitioned areas having the same shape as the predetermined area are regularly formed on the object,

4. The exposure method according to claim 3, wherein the measurement area includes the partition area adjacent to the predetermined area.

11. The exposure method according to claim 10, wherein the measurement area includes the partition area adjacent to the predetermined area in a direction intersecting the predetermined direction.

12. The exposure method according to claim 10, wherein the measurement area includes the partition area adjacent to the predetermined area in the predetermined direction.

[13] The measured area is an area not including the predetermined area,

Before starting the irradiation of the exposure light to the predetermined area, irradiate the measurement light to the measurement area and the predetermined area,

Detecting positional relationship information between the measurement target area and the predetermined area. Claim 10. The exposure method according to any one of claims 10 to 12.

[14] The relative positional relationship between the exposure light and the predetermined region in a direction intersecting the optical axis direction of the optical system is controlled based on a measurement result of the position information of the predetermined region. The exposure method according to any one of claims 1 to 13.

[15] When exposing the predetermined area on the object,

The object is moved in synchronism with the movement of the mask in a direction corresponding to the predetermined direction in a state in which a part of the mask pattern is projected onto a part of the predetermined region through the optical system. While moving in a predetermined direction,

Irradiate measurement light on the mask side measurement pattern attached to the mask pattern to measure the position information of the mask,

5. The exposure method according to claim 4, wherein a relative positional relationship between the mask and the object is controlled based on a measurement result of positional information of the mask and the predetermined area.

[16] An exposure apparatus that irradiates a predetermined area on an object with an exposure light via an optical system to expose the predetermined area,

When irradiating the predetermined area with the exposure light, the predetermined area on the object or a measurement area consisting of an area on the object whose positional relationship is known is not passed through the optical system. A measuring device that irradiates the measuring light to measure position information of the predetermined region;

An exposure apparatus comprising: a control device that controls a relative positional relationship between the exposure light and the predetermined region based on a measurement result of the measurement device.

17. The exposure apparatus according to claim 16, wherein the measurement apparatus irradiates light having a wavelength different from that of the exposure light as the measurement light.

[18] When exposing the predetermined area on the object with the exposure light, the object and the exposure light are phased in a predetermined direction in a state in which the exposure light is irradiated on a part of the predetermined area. It has a relative movement mechanism to move against,

The measurement device continuously irradiates the measurement area with the measurement light without passing through the optical system during relative movement between the object and the predetermined area, and continuously outputs position information of the predetermined area. 18. The exposure apparatus according to claim 17, wherein measurement is performed.

[19] The measurement device irradiates the measurement pattern formed in the measurement target region with the measurement light in order to represent a relative movement amount between the predetermined region on the object and the exposure light. The exposure apparatus according to claim 18, wherein:

[20] The measurement pattern includes a pattern in which first pattern portions and second pattern portions having characteristics different from the first pattern portions with respect to the measurement light are alternately arranged. Item 20. The exposure apparatus according to Item 19.

[21] The measurement pattern includes line-and-space patterns that are different in height or reflectivity between the first pattern portion and the second pattern portion and are periodically formed in the predetermined direction. ,

The measurement apparatus irradiates the measurement light to the line 'and' space pattern, and periodically changes according to relative movement of the measurement light and the measurement area in the predetermined direction. 21. The exposure apparatus according to claim 20, wherein a measurement signal is detected.

[22] A part of the line 'and' space pattern includes a reference portion in which a ratio of lengths in the predetermined direction between the first pattern portion and the second pattern portion is different from other portions. The measurement device separates an aperiodic signal for specifying the reference portion from the measurement signal in response to the measurement light and the measurement region moving relative to each other in the predetermined direction. The exposure apparatus according to claim 21, wherein the exposure apparatus is characterized in that:

[23] The measurement pattern includes a periodic pattern periodically formed in a direction intersecting the predetermined direction,

The measurement device detects a periodic signal corresponding to a relative displacement in a direction orthogonal to the predetermined direction between the measurement light and the measurement target region by irradiating the periodic pattern with the measurement light. 20. The exposure apparatus according to claim 19, wherein:

[24] The measurement pattern includes an aperiodic pattern in the predetermined direction,

The measurement device detects a state in which the measurement light and the measurement region are in a specific positional relationship in the predetermined direction by irradiating the measurement light to the non-periodic pattern. The exposure apparatus according to claim 19, wherein the exposure apparatus is characterized in that:

[25] A plurality of partitioned areas having the same shape as the predetermined area are regularly formed on the object. And

The measurement area includes the partition area adjacent to the predetermined area, and the measurement device is positioned according to the arrangement of the measurement area, and the measurement area is placed in the measurement area during exposure of the predetermined area. 19. The exposure apparatus according to claim 18, further comprising a first detection unit that irradiates measurement light and measures position information of the predetermined region.

[26] The measurement area includes the partition area adjacent to the predetermined area in a direction intersecting the predetermined direction,

26. The detection unit according to claim 25, wherein the first detection unit includes a detection unit positioned at a position shifted in a direction intersecting the predetermined direction with respect to an irradiation region of the exposure light on the object. Exposure device.

[27] The measurement area includes the partition area adjacent to the predetermined area in a direction intersecting the predetermined direction,

27. The exposure apparatus according to claim 25, wherein the first detection unit includes a detection unit positioned at a position shifted in the predetermined direction with respect to the exposure light irradiation region on the object. .

[28] The measured area is an area that does not include the predetermined area! /,

The measuring device is

Positioning according to the arrangement of the predetermined area and the measurement area, and before the predetermined area is exposed, the measurement light is irradiated to the predetermined area and the measurement area, and position information of the predetermined area A second detector for measuring

26. The exposure apparatus according to claim 25, further comprising: a storage unit that stores a measurement result of the second detection unit.

[29] The control device includes:

29. The relative positional relationship between the exposure light and the predetermined region in a direction intersecting with the optical axis direction of the optical system is controlled based on a measurement result of the measuring device. The exposure apparatus according to any one of the above.

[30] The optical system is a projection optical system that projects a partial image of a mask pattern onto a part of the predetermined region, The relative movement mechanism is a stage mechanism that moves the object in the predetermined direction in synchronization with the movement of the mask in a direction corresponding to the predetermined direction.

A mask-side measuring device that irradiates measurement light on a mask side attached to the mask pattern and measures positional information of the mask;

19. The exposure apparatus according to claim 19, wherein the control device controls a relative positional relationship between the mask and the object based on measurement results of the measurement devices on the object side and the mask side.

31. A device manufacturing method using the exposure apparatus according to any one of claims 16 to 30.