WO2008056760A1 - Procédé destiné à la production d'un monocristal de carbure de silicium - Google Patents

Procédé destiné à la production d'un monocristal de carbure de silicium Download PDF

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Publication number
WO2008056760A1
WO2008056760A1 PCT/JP2007/071769 JP2007071769W WO2008056760A1 WO 2008056760 A1 WO2008056760 A1 WO 2008056760A1 JP 2007071769 W JP2007071769 W JP 2007071769W WO 2008056760 A1 WO2008056760 A1 WO 2008056760A1
Authority
WO
WIPO (PCT)
Prior art keywords
silicon carbide
single crystal
crucible
carbide single
raw material
Prior art date
Application number
PCT/JP2007/071769
Other languages
English (en)
Japanese (ja)
Inventor
Hidetoshi Ishihara
Daisuke Kondo
Sho Kumagai
Original Assignee
Bridgestone Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bridgestone Corporation filed Critical Bridgestone Corporation
Publication of WO2008056760A1 publication Critical patent/WO2008056760A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Definitions

  • the present invention relates to a method for manufacturing a silicon carbide (SiC) single crystal suitable for use as a substrate for a high-frequency semiconductor device.
  • SiC silicon carbide
  • a substrate of a high-frequency semiconductor device is required to have a semi-insulating (high resistance) characteristic with a resistivity of about 10 5 to 10 12 [ ⁇ 'cm].
  • silicon carbide single crystals which are expected to be used as substrates for high-frequency semiconductor devices, have been devised to reduce the concentration of impurities such as nitrogen contained in the crystals! (See Patent Document 1)
  • the present invention has been made in order to solve the above-described problems, and an object of the present invention is to produce a silicon carbide single crystal capable of achieving high resistance by reducing the concentration of impurities contained therein. It is to provide a method.
  • Patent Document 1 Japanese Patent Laid-Open No. 2002-274994
  • the method for producing a silicon carbide single crystal according to the present invention includes a temperature at which a silicon carbide source material sublimes in an inert gas atmosphere after holding the crucible for a predetermined time at a temperature at which the silicon carbide source material does not sublime in a reduced pressure atmosphere.
  • a silicon carbide single crystal is grown on the surface of the seed crystal by sublimating the silicon carbide raw material by heating the crucible.
  • impurities contained in the crucible and the silicon carbide raw material are removed by holding the crucible for a predetermined time at a temperature at which the silicon carbide raw material does not sublime in a reduced pressure atmosphere. Then, since the silicon carbide single crystal is vapor-phase grown, it is possible to manufacture a silicon carbide single crystal having a low concentration of impurities contained therein and a high resistivity.
  • FIG. 1 is a schematic diagram showing a silicon carbide single crystal manufacturing apparatus according to an embodiment of the present invention.
  • FIG. 2 is a profile diagram showing the nitrogen concentration inside a silicon carbide single crystal produced by the prior art and the present invention.
  • FIG. 3 is a profile diagram showing a resistance value inside a silicon carbide single crystal manufactured according to the prior art and the present invention.
  • a silicon carbide single crystal manufacturing apparatus 1 includes a graphite crucible 3 in which a silicon carbide raw material 2 is housed and a seed crystal 4 on the back surface.
  • a cover body 5 that covers the opening of the crucible 3, a porous heat insulating material 6 that covers the entire crucible 3 including the cover body 5, and a heating furnace 7 that houses the heat insulating material 6 including the crucible 3 are provided. .
  • silicon carbide raw material 2 is supplied into crucible 3, seed crystal 4 and silicon carbide raw material 2 are opposed to each other. Cover the opening of the crucible 3 with the lid 5. Then, under a reduced pressure atmosphere (2000 ° C in five hundred to twenty-five 00 ° C. Example) (lkPa about. Preferably less. About 1 X 10- 4 Pa in Example loopa) silicon carbide source material 2 does not sublime at temperatures After holding the crucible 3 for a predetermined time (about 24 hours), the silicon carbide raw material 2 is sublimated by heating the crucible 3 to a temperature at which the silicon carbide raw material 2 sublimates in an argon gas atmosphere (about 2500 ° C). Then, a silicon carbide single crystal is grown on the surface of the seed crystal 4.
  • a reduced pressure atmosphere 2000 ° C in five hundred to twenty-five 00 ° C. Example
  • argon gas atmosphere about 2500 ° C
  • an argon gas atmosphere As described above, in the method for manufacturing a silicon carbide single crystal according to the embodiment of the present invention, after holding the crucible 3 at a temperature at which the silicon carbide raw material 2 does not sublime under a reduced-pressure atmosphere for a predetermined time, an argon gas atmosphere The crucible 3 is heated to a temperature at which the silicon carbide raw material 2 is sublimated below, so that the silicon carbide raw material 2 is sublimated to grow a silicon carbide single crystal on the surface of the seed crystal 4.
  • carbonization is performed after removing impurities contained in the crucible 3 and the silicon carbide raw material 2 by holding the crucible 3 at a temperature at which the silicon carbide raw material 2 does not sublime in a reduced pressure atmosphere for a predetermined time. Since the silicon single crystal is vapor-phase grown, as shown in FIGS. 2 and 3, the concentration of nitrogen contained therein is lower than that of the silicon carbide single crystal manufactured by the prior art. A silicon carbide single crystal having a high resistivity can be produced.
  • the nitrogen concentration shown in FIG. 2 indicates the result measured by SIMS analysis.
  • the resistance values shown in Fig. 3 are non-contact eddy current detection type measuring instrument (resistance value 1 X 10 3 [ ⁇ 'cm]) and non-contact type CV curve measuring type measuring instrument (resistance value> 1 ⁇ 10 5 [ ⁇ 'cm]) shows the measurement results.
  • the present invention can be used as a substrate for a high-frequency semiconductor device.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

L'invention concerne un procédé pour la production d'un monocristal de carbure de silicium consistant à conserver un creuset à une température qui permet de prévenir la sublimation d'un matériau de carbure de silicium dans une atmosphère évacuée pendant une durée prédéterminée et, puis, à chauffer le creuset à une température qui permet de sublimer le matériau de carbure de silicium dans une atmosphère soumise à l'argon, ledit matériau de carbure de silicium étant sublimé pour permettre la croissance d'un monocristal de carbure de silicium à la surface d'un cristal germe. Le procédé de cette invention permet de produire un monocristal de carbure de silicium possédant une faible concentration interne d'impuretés et une résistivité élevée.
PCT/JP2007/071769 2006-11-09 2007-11-09 Procédé destiné à la production d'un monocristal de carbure de silicium WO2008056760A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006304060A JP2008120616A (ja) 2006-11-09 2006-11-09 炭化珪素単結晶の製造方法
JP2006-304060 2006-11-09

Publications (1)

Publication Number Publication Date
WO2008056760A1 true WO2008056760A1 (fr) 2008-05-15

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Application Number Title Priority Date Filing Date
PCT/JP2007/071769 WO2008056760A1 (fr) 2006-11-09 2007-11-09 Procédé destiné à la production d'un monocristal de carbure de silicium

Country Status (2)

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JP (1) JP2008120616A (fr)
WO (1) WO2008056760A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112877771A (zh) * 2021-01-04 2021-06-01 山西烁科晶体有限公司 一种单晶生长的坩埚和方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5336307B2 (ja) * 2009-09-04 2013-11-06 株式会社ブリヂストン 炭化珪素単結晶の製造方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002274994A (ja) * 2001-03-23 2002-09-25 Nippon Steel Corp 炭化珪素単結晶の製造方法及びその装置並びに炭化珪素単結晶インゴット
JP2002274995A (ja) * 2001-03-23 2002-09-25 Nippon Steel Corp 炭化珪素単結晶インゴットの製造方法
JP2005008473A (ja) * 2003-06-18 2005-01-13 Nippon Steel Corp 高純度炭化珪素単結晶、単結晶ウェハおよびその製造方法
JP2005041710A (ja) * 2003-07-23 2005-02-17 Nippon Steel Corp 炭化珪素単結晶、炭化珪素単結晶ウェハ及びその製造方法
JP2005053739A (ja) * 2003-08-04 2005-03-03 Denso Corp 単結晶の成長方法および成長装置
JP2005097040A (ja) * 2003-09-25 2005-04-14 New Industry Research Organization 単結晶炭化ケイ素基板の表面改良方法及びその改良された単結晶炭化ケイ素基板、並びに、単結晶炭化ケイ素成長方法
JP2005220017A (ja) * 2005-04-11 2005-08-18 Toyota Central Res & Dev Lab Inc 単結晶の製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002274994A (ja) * 2001-03-23 2002-09-25 Nippon Steel Corp 炭化珪素単結晶の製造方法及びその装置並びに炭化珪素単結晶インゴット
JP2002274995A (ja) * 2001-03-23 2002-09-25 Nippon Steel Corp 炭化珪素単結晶インゴットの製造方法
JP2005008473A (ja) * 2003-06-18 2005-01-13 Nippon Steel Corp 高純度炭化珪素単結晶、単結晶ウェハおよびその製造方法
JP2005041710A (ja) * 2003-07-23 2005-02-17 Nippon Steel Corp 炭化珪素単結晶、炭化珪素単結晶ウェハ及びその製造方法
JP2005053739A (ja) * 2003-08-04 2005-03-03 Denso Corp 単結晶の成長方法および成長装置
JP2005097040A (ja) * 2003-09-25 2005-04-14 New Industry Research Organization 単結晶炭化ケイ素基板の表面改良方法及びその改良された単結晶炭化ケイ素基板、並びに、単結晶炭化ケイ素成長方法
JP2005220017A (ja) * 2005-04-11 2005-08-18 Toyota Central Res & Dev Lab Inc 単結晶の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112877771A (zh) * 2021-01-04 2021-06-01 山西烁科晶体有限公司 一种单晶生长的坩埚和方法

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