Classifications

• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
  • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
  • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
  • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
  • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
  • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
  • B05C5/00—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
  • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
  • B05D1/00—Processes for applying liquids or other fluent materials
  • B05D1/26—Processes for applying liquids or other fluent materials performed by applying the liquid or other fluent material from an outlet device in contact with, or almost in contact with, the surface
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L23/00—Details of semiconductor or other solid state devices
  • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
  • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
  • H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
  • H01L24/743—Apparatus for manufacturing layer connectors
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/10—Bump connectors; Manufacturing methods related thereto
  • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
  • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
  • H01L2224/161—Disposition
  • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
  • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
  • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
  • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
  • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
  • H01L2224/321—Disposition
  • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
  • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
  • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
  • H01L2224/732—Location after the connecting process
  • H01L2224/73201—Location after the connecting process on the same surface
  • H01L2224/73203—Bump and layer connectors
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
  • H01L2224/732—Location after the connecting process
  • H01L2224/73201—Location after the connecting process on the same surface
  • H01L2224/73203—Bump and layer connectors
  • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
  • H01L2224/92—Specific sequence of method steps
  • H01L2224/921—Connecting a surface with connectors of different types
  • H01L2224/9212—Sequential connecting processes
  • H01L2224/92122—Sequential connecting processes the first connecting process involving a bump connector
  • H01L2224/92125—Sequential connecting processes the first connecting process involving a bump connector the second connecting process involving a layer connector
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/0001—Technical content checked by a classifier
  • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/0001—Technical content checked by a classifier
  • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01004—Beryllium [Be]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01019—Potassium [K]

Definitions

• the present invention relates to a method, an apparatus, and a program for filling a liquid material ejected from an ejection portion using a capillary phenomenon into a gap between a substrate and a workpiece placed thereon, and more particularly to semiconductor packaging.
• the present invention relates to a method, an apparatus, and a program capable of correcting the discharge amount of the liquid material without calculating complicated parameters in the underfill process of the present invention.
• discharge in the present invention means that the liquid material is separated from the discharge portion. This includes a discharge method that contacts the workpiece before, and a discharge method that contacts the workpiece after the liquid material is separated from the discharge portion.
• a mounting technique called a flip-chip method has attracted attention in response to demands for high-density mounting of semiconductor components and increase in the number of pins due to downsizing and higher performance of electronic devices.
• Flip chip mounting is performed by forming protruding electrodes (bumps) on electrode pads existing on the surface of the semiconductor chip and directly bonding them to the electrode pads on the opposite substrate.
• the electrode pads can be arranged on the entire surface of the semiconductor chip, which is suitable for increasing the number of pins.
• the connection wiring length is only the height of the bump electrode, the electrical characteristics are good, and the opposite surface of the connection part of the semiconductor chip is exposed and V, so there are advantages such as easy heat dissipation .
• a resin generated in a gap between a semiconductor chip and a substrate is used to prevent stress generated by a difference in thermal expansion coefficient between the semiconductor chip and the substrate from being concentrated on the connection portion and breaking the connection portion. To reinforce the connection. This process is called underfill (see Figure 1).
• a liquid resin is applied along the outer periphery (for example, one side or two sides) of the semiconductor chip, and the resin is filled in the gap between the semiconductor chip and the substrate by using a capillary phenomenon. After that, the resin is cured by heating in an oven or the like.
• a dispenser is generally used for filling a resin material used in the underfill process.
• One type of dispenser is a jet dispenser that ejects droplets of liquid material from a nozzle.
• Patent Document 1 discloses a method of discharging a viscous material onto a substrate using a jet-type dispenser, in which the total volume of viscous material to be discharged and the length of the viscous material to be discharged are discharged.
• Operating the weighing scale to apply multiple viscous material droplets, generating a feedback signal representing the weight of the multiple viscous material droplets applied to the weighing scale, the total volume viscosity Determining a maximum relative velocity between the dispenser and the substrate such that the material is dispensed over a length is disclosed.
• Patent Document 1 describes the determination of the volume of each of a plurality of viscous material droplets, the determination of the total number of droplets required to be approximately equal to the total volume, and the viscous material over its length. Dispenser and substrate to determine the distance between each droplet required to distribute the droplets approximately uniformly and to ensure that all of the viscous material droplets are ejected approximately uniformly over the length. And determining a maximum relative velocity between the two.
• Patent Document 1 Japanese Patent Application Laid-Open No. 2004-344883
• Patent Document 1 requires a procedure for obtaining the number of droplets and the interval between each droplet in order to discharge uniformly over the length. Since a large parameter is obtained by calculation, many errors occur during the calculation.
• the change in the maximum relative speed between the nozzle (ejection unit) and the substrate is a change in a direction in which the speed becomes slower when the viscosity increases. If the speed is slow, the coating time becomes longer, which has the problem of affecting productivity.
• the present invention solves the above-described problems, does not require calculation of complicated parameters, and does not affect the moving speed of the discharge part! /,
• a liquid material filling method, apparatus, and program The purpose is to provide gram.
• the amount of discharge from the discharge unit per unit time is controlled by controlling the amount of pressurization, the amount of movement of the plunger, the speed of the reciprocating operation of the valve, and the like. It is possible to keep it constant.
• the inventor made the present invention based on an intensive idea that the correction procedure should be simple.
• the first invention is a method of filling the gap between the substrate and the workpiece placed thereon with the liquid material ejected from the ejection section using the capillary phenomenon, on the outer periphery of the workpiece.
• a liquid material filling method characterized in that a coating pattern composed of a coating region and a non-coating region is created, and the ejection amount of the liquid material is corrected by expanding and contracting the coating region and the non-coating region.
• the second invention is characterized in that, in the first invention, the coating region and the non-coating region are expanded and contracted without changing the overall length of the coating pattern.
• a third invention is characterized in that, in the first or second invention, the application pattern has an application area and a non-application area alternately continuous.
• the 4th invention is 1st, 2nd, or 3rd invention
• coating pattern is substantially the same length as one side of a square-shaped workpiece
• the coating pattern has a rectangular shape.
• a coating area having substantially the same length as one side of the workpiece, and one or two non-coating areas adjacent to the coating area and set along the side adjacent to the one side of the workpiece.
• a sixth invention is the first, second, or third invention, wherein the coating pattern is set to be substantially the same length as one side of the square cake, adjacent to the coating region, and parallel to the coating region. It is characterized by comprising one or two non-application areas.
• the seventh invention is characterized in that, in any one of the first to sixth inventions, the moving speed (V) of the discharge section is not changed before and after the correction of the discharge amount.
• the weight (W) of the discharged liquid material is measured during the discharge time (T) before correction, and the discharge time (T) and the weight (W) are measured.
• the time (T) for discharging the proper weight (W) is calculated from the relationship between the time and the moving speed (V) of the discharge part.
• the difference from the total length (L) of the area is defined as the amount of expansion / contraction of the entire length of the coating area and the non-coating area.
• a time (T) from when the liquid material is discharged until an appropriate weight (W) is obtained is measured, and the time (T) and the moving speed of the discharge unit are measured.
• the difference from the length (L) is the amount of expansion / contraction of the entire length of the coating area and the non-coating area.
• the relationship between the discharge time or the discharge weight and the viscosity is stored in a memory, and in the step after the liquid material replacement, the expansion and contraction amount of each of the coating region and the non-coating region. Is calculated based on information stored in the memory.
• the eleventh invention provides an allowable range for determining whether to perform correction in the eighth, ninth or tenth invention, and when the measured value exceeds the allowable range, each of the application region and the non-application region is provided. It is characterized by correcting the expansion / contraction amount of the full length.
• a twelfth aspect of the invention is characterized in that, in any one of the first to eleventh aspects of the invention, the ejection amount associated with a change in viscosity of the liquid material over time is corrected.
• the user may thus, the ejection amount of the liquid material is corrected based on the time information, the number of workpieces, or the number of substrates.
• a liquid material supply unit that supplies a liquid material to be discharged, a measuring unit that measures the liquid material to be discharged, a discharge unit having a discharge port for discharging the liquid material, and the discharge unit are movable.
• the control unit has a program that implements a method for performing the first or second invention. It is the apparatus characterized by these.
• a liquid material supply unit that supplies a liquid material to be discharged, a measuring unit that measures the liquid material to be discharged, a discharge unit having a discharge port for discharging the liquid material, and the discharge unit are movable.
• the program causes the control unit to implement the method according to any one of the first to thirteenth inventions.
• the length of the coating area and the non-coating area are respectively expanded and contracted to correct the discharge amount, so that the coating can be performed without restriction on uniform coating over the entire length of the coating pattern. Patterns can be created freely.
• FIG. 1 is a side view for explaining an underfill process.
• FIG. 2 is a schematic perspective view of an apparatus according to Example 1.
• FIG. 3 is an explanatory view showing a first application pattern example.
• FIG. 4 is an explanatory view showing a second application pattern example.
• FIG. 5 is an explanatory view showing a third application pattern example.
• FIG. 6 is an explanatory view showing a fourth application pattern example.
• FIG. 7 is a graph for explaining a coating pattern correction method.
• FIG. 8 is a graph for explaining correction based on a change in weight.
• FIG. 9 is a graph for explaining correction based on a change in time. Explanation of symbols
• One or a plurality of application patterns are created, and one of them is selected. For example, as shown in FIG. 3, a coating pattern composed of coating areas 11 and non-coating areas 12 which are lines along one side of the chip 2 which is a rectangular workpiece and which are alternately continuous is created.
• the workpiece is not limited to a rectangular shape, and may be a circle or a polygon.
• the total length of the coating pattern and the number of coating areas 11 and non-coating areas 12 are determined from the weight or volume of the liquid material 5 required to fill the gap between the chip 2 and the substrate 1. For example, when coating is performed on one side of the chip 2 as shown in FIG. 3, one coating pattern is formed by both sides of one coating region 11 being the non-coating region 12.
• the application area 11 is not limited to a linear shape but may be a dot shape. For example, if the chip 2 is small V, the yield is increased! /, If (reduced defects due to bubble entrainment! /), Discharge at a single point near the center of the side or stop the nozzle 13 serving as a discharge unit at one location for a certain period of time. May be discharged.
• the relationship between the application pattern and the appropriate weight and / or appropriate discharge time is calculated by a pre-test and stored in the memory of the control unit.
• Changes in the discharge amount are forces that are affected by changes in the viscosity of the liquid material caused by changes in the temperature, clogging of the discharge part, and water head difference. It becomes Kanakura.
• a correction cycle which is a cycle for correcting the application pattern, is set.
• the correction period for example, the time information input by the user, the number of chips 2 or the number of substrates 1 and the like are set.
• setting the predetermined time set the time that the change in the discharge amount of the liquid material is expected to exceed the allowable range from the start of work.
• setting the number of sheets determine the number of sheets to be processed from the time required to process one chip 2 or the time required to process one substrate 1 (loading ⁇ coating ⁇ unloading time) and the above predetermined time. To do.
• the explanation is based on the assumption that only the viscosity change with the passage of time occurs below the force that needs to consider the viscosity change of the liquid material caused by the passage of time and temperature. To do.
• the nozzle 13 is moved above the weighing scale 8, and the liquid material is discharged at a fixed position. Then, the weight of the liquid material discharged to the weighing unit of the weigh scale 8 is read, and the correction amount is obtained by comparison with the norm stored in (2).
• the correction amount calculation method includes (i) a method of measuring the weight when discharging for a certain period of time and calculating the correction amount based on the difference from the appropriate weight, and (mouth) the discharge time required to reach the appropriate weight. And a correction amount is calculated based on a difference from the immediately preceding ejection time.
• the appropriate weight W required to fill the liquid material is calculated from the size of the chip 2 and the gap between the chip 2 and the substrate 1.
• the size of chip 2 is calculated from the size of chip 2 and the gap between the chip 2 and the substrate 1.
• the total length L of the coating area 11 is calculated. Next, the liquid material with the appropriate weight W is discharged.
• the other method is to calculate the time required for the
• the length is the appropriate length L of the application area 11. Therefore, the amount of expansion / contraction of the coating area 11 L L It becomes.
• the amount (measurement value) does not change or the calculated correction amount exceeds the allowable range (for example, 10% soil).
• the allowable range for example, 10% soil.
• a preferred embodiment of the correction with an allowable range is detailed in, for example, Japanese Patent Application Laid-Open No. 2001-137756 related to the applicant's patent application.
• an allowable range for determining whether to perform correction is provided, and the coating pattern is corrected only when the measured value or the correction amount (time, weight or expansion / contraction amount) exceeds the allowable range.
• the length of the application region 11 is extended or reduced, and the non-application region 12 is reduced or extended by the same amount as that amount. .
• the amount of expansion / contraction L is divided equally according to the number of each of the application area 11 and the non-application area 12.
• the amount of expansion / contraction in the application area 11 is the same as L, but
• the expansion / contraction amount of the application area 12 is L / 2.
• the steps (4) and (5) are executed in the correction cycle set in (3) or when the type (size or shape) of the substrate 1 is changed. Regardless of the change in viscosity of the liquid material over time, the best coating pattern can always be formed.
• FIG. 2 shows a schematic diagram of an apparatus for carrying out the method according to the present embodiment.
• the flip chip mounting substrate 10 that is the object to be coated is transported by the transport means 9 to below the nozzle 13 that discharges the liquid material.
• the dispenser 6 having the nozzle 13 is attached to the XY driving means 7 and can be moved onto the substrate 10 or the weighing scale 8.
• the operation of applying the liquid material while moving in the XY direction above the substrate 10 can also be performed by the XY driving means 7.
• a basic application pattern that is a locus of the application operation of the nozzle 13 is stored in advance in a memory or the like in a control unit (not shown) that controls the operation of the XY driving means 7 and the dispenser 6.
• the substrate 10 is carried out of the apparatus by the conveying means 9. Then, the next substrate 10 is carried in and the coating operation is repeated. That is, the loading, coating, and unloading become one cycle, and the coating of the liquid material is repeated until the coating of the target number of substrates 10 is completed.
• the discharge amount is corrected by the change in the viscosity of the liquid material.
• the correction amount is calculated by moving the nozzle 13 on the weighing scale 8 by the XY driving means 7 and by the weighing scale 8. This is done by measuring the time required for ejection or the weight of the liquid material. Although the preferable calculation method of a correction amount is illustrated below, calculation of a correction amount is not limited to these. It is assumed that the moving speed V of the nozzle 13 is constant.
• the liquid material is discharged from the nozzle 13 for the same time as the time T required to form the coating pattern on the immediately preceding substrate 10 (STEP 11). Measure the weight W of the discharged liquid material with a weigh scale 8 (STEP 12). The appropriate weight W calculated in advance for each application pattern and stored in the control unit is compared with the measured weight W (STEP 13), and the weight difference exceeds the allowable range.
• Whether or not correction is necessary is determined based on whether or not (STEP 14). When correction is required in STEP14, it is necessary to discharge the appropriate weight W from the relationship between time T and W.
• the amount of expansion / contraction L (difference with L) is calculated from the total length L of the fabric region 11 (STEP 17).
• the coating pattern is corrected by expanding and contracting the coating area 11 and the non-coating area 12 (STEP 18). Update the value of T to T and the value of L to L (STEP 19).
• STEP 13 may be omitted, and STEP 14 may be performed after calculation of the expansion / contraction amount (after STEP 17).
• TEP22 The time T required to form the coating pattern on the immediately preceding substrate 10 is compared with the measurement time T (STEP 23), and correction is necessary depending on whether the measurement time T exceeds the allowable range.
• the total length of the coating pattern obtained by adding the total length of the coating region 11 after correction and the total length of the non-coating region 12 is the same before and after the correction.
• the operation of the XY drive means 7 may be controlled so as to move the nozzle 13 only on the application area 11.
• the moving time of the nozzle 13 changes by the amount of expansion / contraction L.
• the correction of the application pattern is automatically performed at a set correction cycle.
• the liquid material reaches the limit of use time or until the liquid material runs out, make corrections with the set correction cycle and continue the coating operation. Even when the liquid material is exchanged and the first application is performed, it is preferable to perform the correction before the application is performed in order to correct variations in the quality of the liquid material. In this case, as described above, if the correction amount is calculated based on the data stored in the control unit, the discharge and measurement work for correction are not necessary.
• the correction of the discharge amount due to the change in viscosity is that the viscosity increases with time and the discharge amount has to be increased! /. In most cases, the following will be applied when increasing the discharge amount. explain.
• FIGS. 3 to 6 are explanatory diagrams showing examples of coating patterns, and are views of the substrate 10 on which the chip 2 is mounted as viewed from the mounting surface side.
• FIG. 3 shows a case where application is performed on one side of the chip 2, and two non-application areas 12 are connected to both ends of one application area 11 to form one application pattern. Further, the total length of the application region 11 and the non-application region 12 is equal to the length of one side of the chip 2. Changing the expansion / contraction amount according to the calculated correction amount extends both ends or one end of the application area 11 toward the non-application area 12, and the non-application area 12 is the same amount as the extension of the application area 11. Shrink. At this time, expansion and contraction is performed so that the entire length of the coating pattern does not change.
• the operation of the XY driving means 7 may be controlled so that the nozzle 13 is moved only on the application region 11.
• the operation of the XY drive means 7 may be controlled so that the nozzle 13 traces the entire length of the coating pattern.
• the total length of the application area 11 and the non-application area 12 after the change is the moving distance of the nozzle 13. If such control is performed, if the moving speed of the nozzle 13 is kept constant without being changed, the application time does not change before and after the correction. It can be applied to Fig. 4! / And 6! /, Which will be described later.
• the application region 11 is divided into three parts on one side of the chip 2, and the two non-application regions 12 are connected to form one application pattern. Further, the total length of the application region 11 and the non-application region 12 is equal to the length of one side of the chip 2. In the case of this pattern, it is possible to concentrate and apply it to the necessary place with a large filling amount.
• the two application areas 11 at the left and right ends should be stretched in such a way that the center ends extend toward the center respectively. Or make one end stretch.
• the non-application area 12 is contracted by the same amount as the application area 11 is extended. The expansion and contraction is performed as described above so that the total length of the coating pattern does not change.
• each coating region 11 may have a different length! /, Needless to say! /.
• FIG. 5 shows a coating pattern when the required filling amount is larger than in FIGS. 3 and 4.
• the non-coating region 12 is a pattern that bends toward the two sides adjacent to the side 11 that discharges.
• both ends or one end of the application region 11 are extended toward the bent non-application region 12.
• the non-application area 12 is shrunk by the same amount as the application area 11 is extended.
• the length of the coating pattern is expanded and contracted so as not to change.
• the operation of the XY driving means 7 may be controlled so that the nozzle 13 is moved only on the coating region 11.
• FIG. 6 shows a coating pattern when the same filling amount as that in FIG. 5 is required but there is no room for coating in the spaces along the left and right sides of the chip 2.
• the non-application area 12 is a pattern that is folded back from both ends of the application area 11.
• both ends or one end of the application region 11 are extended toward the non-application region 12 that is turned back.
• the non-application area 12 is contracted by the same amount as the application area 11 is extended.
• the expansion and contraction is performed so that the total length of the coating pattern does not change.
• the operation of the XY drive means 7 may be controlled so that the nozzle 13 is moved only on the coating region 11.
• Figs. 3 to 6 have described the case where the liquid material is applied to one side of the chip 2, but the case where the liquid material is applied in an L shape or U shape over two adjacent sides or the entire outer periphery of the chip 2 is described. It can also be applied to the case of coating over a wide area.
• the dispenser according to the present embodiment is not limited to the jet type, and may be an air type that discharges a liquid material by compressed air.
• the present invention can be implemented in various apparatuses for discharging a liquid material.
• an air type, a flat tubing mechanism or the like that applies a regulated air to the liquid material in the syringe having a nozzle at the tip for a desired time.
• Tubing type with a rotary tubing mechanism plunger type that moves a desired amount of plunger that slides in close contact with the inner surface of a storage container having a nozzle at the tip, and discharges liquid material by rotating the screw. Examples thereof include a screw type that controls the discharge of a liquid material to which a desired pressure is applied by opening and closing the valve.
• a jet type or plunger type plunger that discharges and discharges the liquid material from the nozzle tip by colliding the valve body with the valve seat.
• Examples include a plunger jet type, a continuous jet type, or a demand type ink jet type in which the nozzle is moved and then suddenly stopped and then ejected from the nozzle tip.

Landscapes

• Engineering & Computer Science (AREA)
• Computer Hardware Design (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Manufacturing & Machinery (AREA)
• Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Application Of Or Painting With Fluid Materials (AREA)
• Coating Apparatus (AREA)
• Non-Metallic Protective Coatings For Printed Circuits (AREA)

Priority Applications (4)

Applications Claiming Priority (2)

Publications (1)

Family

ID=39344292

Family Applications (1)

Country Status (7)

Cited By (2)

Families Citing this family (4)

Citations (4)

Family Cites Families (23)

• 2006
  • 2006-11-01 JP JP2006298238A patent/JP4868515B2/ja active Active
• 2007
  • 2007-11-01 TW TW096141130A patent/TWI404577B/zh active
  • 2007-11-01 KR KR1020097008707A patent/KR101411449B1/ko active IP Right Grant
  • 2007-11-01 CN CN200780040193.1A patent/CN101547750B/zh active Active
  • 2007-11-01 WO PCT/JP2007/071292 patent/WO2008053952A1/ja active Search and Examination
  • 2007-11-01 US US12/513,250 patent/US8288173B2/en active Active
• 2009
  • 2009-11-26 HK HK09111041.7A patent/HK1131363A1/zh unknown

Patent Citations (4)

Also Published As

Similar Documents

Legal Events